CN112735996A - Quartz boat for silicon wafer and silicon wafer placing mode - Google Patents
Quartz boat for silicon wafer and silicon wafer placing mode Download PDFInfo
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- CN112735996A CN112735996A CN202110069338.2A CN202110069338A CN112735996A CN 112735996 A CN112735996 A CN 112735996A CN 202110069338 A CN202110069338 A CN 202110069338A CN 112735996 A CN112735996 A CN 112735996A
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 176
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 174
- 239000010703 silicon Substances 0.000 title claims abstract description 174
- 239000010453 quartz Substances 0.000 title claims abstract description 43
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title claims abstract description 43
- 235000012431 wafers Nutrition 0.000 claims abstract description 156
- 238000000034 method Methods 0.000 claims description 15
- 238000005253 cladding Methods 0.000 claims description 3
- 239000010432 diamond Substances 0.000 claims description 3
- 239000011796 hollow space material Substances 0.000 claims description 3
- 238000009792 diffusion process Methods 0.000 abstract description 24
- 230000000903 blocking effect Effects 0.000 abstract description 4
- 238000004519 manufacturing process Methods 0.000 description 10
- 230000008569 process Effects 0.000 description 7
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 5
- 229910052796 boron Inorganic materials 0.000 description 5
- 238000011161 development Methods 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005484 gravity Effects 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 230000004069 differentiation Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
- H01L21/67313—Horizontal boat type carrier whereby the substrates are vertically supported, e.g. comprising rod-shaped elements
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- Condensed Matter Physics & Semiconductors (AREA)
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- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
The invention discloses a quartz boat for a silicon wafer and a silicon wafer placing mode, wherein the quartz boat comprises a front fixing plate and a rear fixing plate which are oppositely arranged in front and back, and a plurality of upper mounting columns and lower mounting columns which are arranged between the front fixing plate and the rear fixing plate, wherein the upper mounting columns and the lower mounting columns are arranged in a one-to-one correspondence manner; clamping grooves are formed in the upper mounting column and the lower mounting column respectively, the clamping grooves in the upper mounting column and the clamping grooves in the lower mounting column are arranged in a one-to-one correspondence mode, and the notch of the clamping groove in the upper mounting column is arranged opposite to the notch of the corresponding clamping groove in the lower mounting column so as to limit the silicon wafer placed between the upper mounting column and the lower mounting column to move downwards; the quartz boat is horizontally arranged in the furnace tube, the axial lead direction of the furnace tube is parallel to the airflow direction of the gas introduced into the furnace tube, the plane of the silicon wafer is parallel to the axial lead of the furnace tube, or an included angle is formed between the plane of the silicon wafer and the axial lead of the furnace tube. The silicon wafer placing mode provided by the invention reduces the blocking effect of the silicon wafer on air flow, ensures consistent uniformity in the silicon wafer after the diffusion process, and is suitable for large silicon wafers.
Description
Technical Field
The invention relates to the field of solar silicon wafer preparation, in particular to a quartz boat for a silicon wafer and a silicon wafer placing mode.
Background
The silicon wafers of the solar cell are all required to be manufactured into PN junctions through a diffusion process, the silicon wafers are stacked in a quartz boat, and then the quartz boat and the silicon wafers are placed in a diffusion furnace together to finish the diffusion process to manufacture the PN junctions.
The prior art scheme mainly has the following defects: the silicon wafers stacked in the quartz boat are in the vertical direction (the length direction of the quartz boat is the horizontal direction, the silicon wafers are vertically placed in the furnace tube, namely the plane where the silicon wafers are located is vertical to the length direction of the quartz boat), the extension direction of the silicon wafers is vertical to the direction of airflow, the airflow enters the furnace tube from one end of the furnace tube, the silicon wafers positioned in front of the furnace tube can block the airflow from flowing to the internal silicon wafers, so that part of the airflow is not diffused to the central area of the silicon wafers and is pumped away by an air pumping system, and the waste of an air source is caused; the airflow is easy to diffuse on the silicon wafer of which the front end is close to the airflow source head, so that the difference of diffusion effects between the silicon wafers in different areas far away from and near the air source is increased; the airflow is easy to collect at the peripheral edge of the silicon wafer, and the airflow is difficult to collect in the central area of the silicon wafer, so that the difference of the diffusion effect inside the silicon wafer is increased; the larger the size of the silicon wafer is, the more difficult the central area of the silicon wafer is to collect airflow, which is not favorable for the implementation of large-size silicon wafers.
Disclosure of Invention
In order to solve the problems in the prior art, the invention provides a quartz boat for silicon wafers and a silicon wafer placing mode, which are used for solving the problem of large air flow expansion difference among the silicon wafers in different areas in a furnace tube, and the technical scheme is as follows:
on one hand, the invention provides a quartz boat for silicon wafers, which comprises a front fixing plate and a rear fixing plate which are oppositely arranged in front and back, and a plurality of upper mounting columns and a plurality of lower mounting columns which are arranged between the front fixing plate and the rear fixing plate, wherein the upper mounting columns and the lower mounting columns are arranged in a one-to-one correspondence manner, and hollow spaces for accommodating the silicon wafers are arranged between the upper mounting columns and the lower mounting columns;
go up all to be equipped with the draw-in groove that is used for cladding silicon chip side on erection column and the erection column down, go up draw-in groove on the erection column and the draw-in groove one-to-one setting on the erection column down, just go up the notch of draw-in groove on the erection column and the notch of the draw-in groove that corresponds on the erection column down sets up relatively to the restriction is placed at the silicon chip downstream in the draw-in groove that last erection column corresponds with the erection column down, and is makeed the silicon chip place plane is parallel with the vertical face of benchmark that extends along upper and lower direction, perhaps keep the contained angle between silicon chip place plane and the vertical face of benchmark, wherein, the vertical face of benchmark with the extending direction of last erection column, the extending direction of erection column all set.
Further, the included angle is greater than 0 ° and less than 45 °.
Furthermore, the upper mounting columns comprise two single-strip-shaped upper mounting columns and one or more double-strip-shaped upper mounting columns, the double-strip-shaped upper mounting columns are arranged between the two single-strip-shaped upper mounting columns, one end of each single-strip-shaped upper mounting column is provided with a plurality of clamping grooves, and the left end part and the right end part of each double-strip-shaped upper mounting column are provided with a plurality of clamping grooves;
the lower mounting columns comprise two single-strip lower mounting columns and one or more double-strip lower mounting columns, the double-strip lower mounting columns are arranged between the two single-strip lower mounting columns, one end of each single-strip lower mounting column is provided with a plurality of clamping grooves, and the left end part and the right end part of each double-strip lower mounting column are provided with a plurality of clamping grooves;
spaces for placing silicon wafers are arranged among the single-strip-shaped upper mounting columns, the double-strip-shaped upper mounting columns, the single-strip-shaped lower mounting columns and the double-strip-shaped lower mounting columns, and/or spaces for placing silicon wafers are arranged between the adjacent double-strip-shaped upper mounting columns and the adjacent double-strip-shaped lower mounting columns.
Furthermore, each clamping groove is provided with a front side wall, a rear side wall and a groove bottom wall, wherein the front side wall and the rear side wall are arranged in a front-back opposite mode, the groove bottom wall is used for connecting the front side wall and the rear side wall, and the front side wall and the rear side wall are arranged in parallel.
Furthermore, the outer edge of each clamping groove is of an arc, square or diamond structure.
Further, preceding fixed plate, last erection column, lower erection column and after-fixing board are integrated into one piece structure, or go up the erection column, all detachably settings are on preceding fixed plate and after-fixing board down.
Furthermore, the front fixing plate and the rear fixing plate are both of a strip-shaped structure.
Furthermore, one or more heat conduction openings are arranged on the front fixing plate and/or the rear fixing plate.
On the other hand, the invention also provides a silicon chip placing mode, which comprises the following steps:
the silicon wafer is placed in a furnace tube by a quartz boat, the furnace tube is of a hollow tubular structure, and the specific placement mode is as follows: the quartz boat is horizontally arranged in the furnace tube, a lower mounting column of the quartz boat is closer to the bottom of the furnace tube than an upper mounting column, a notch of a clamping groove on the upper mounting column faces downwards, a groove bottom of a corresponding clamping groove on the lower mounting column faces downwards and the notch faces upwards, and a silicon wafer is arranged in the clamping groove corresponding to the upper mounting column and the lower mounting column; the axial lead direction of the furnace tube is parallel to the airflow direction of the gas introduced into the furnace tube, the plane of each silicon wafer is parallel to the axial lead of the furnace tube, or an included angle is formed between the plane of each silicon wafer and the axial lead of the furnace tube, wherein the axial lead of the furnace tube is parallel to the reference vertical plane.
Further, the included angle is greater than 0 ° and less than 45 °.
The technical scheme provided by the invention has the following beneficial effects:
a. according to the novel silicon wafer placing mode provided by the invention, the plane of the silicon wafer is parallel to the airflow direction, or a certain included angle is formed between the plane of the silicon wafer and the airflow direction, so that the blocking effect of the silicon wafer on the airflow is reduced, the uniformity of the silicon wafer in the wafer is more consistent after a diffusion process is carried out in production, the difference between different silicon wafers is smaller, and the novel silicon wafer placing mode has a development trend suitable for silicon wafers with larger sizes;
b. the silicon wafer placing direction is consistent with the length direction of the furnace tube, so that the space utilization rate of the furnace tube is improved, and the productivity and the energy utilization rate are improved;
c. the silicon wafers are obliquely arranged in the furnace tube at a certain angle, the two silicon wafers are overlapped together in the same clamping groove in a back-to-back mode, and due to the gravity of the silicon wafers, the problems of air flow passing through the gaps of the silicon wafers can be prevented, and the problems of spreading and plating around of the silicon wafers can be effectively controlled;
d. the quartz boat for the silicon wafer has the advantages of simple structure and convenience in processing and manufacturing.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings needed to be used in the description of the embodiments will be briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.
FIG. 1 is a perspective view of a quartz boat provided by an embodiment of the present invention;
FIG. 2 is a front view of a quartz boat provided by an embodiment of the present invention;
FIG. 3 is a cross-sectional view taken along line A-A of FIG. 2;
FIG. 4 is a side view of a quartz boat provided by an embodiment of the present invention;
FIG. 5 is an enlarged view of FIG. 1;
FIG. 6 is a perspective view of a furnace tube and quartz boat provided in accordance with an embodiment of the present invention;
FIG. 7 is a front view of a furnace tube and quartz boat provided by an embodiment of the present invention;
FIG. 8 is a cross-sectional view taken along line A-A of FIG. 7;
FIG. 9 is a side view of a furnace tube and quartz boat provided by an embodiment of the present invention;
fig. 10 is an enlarged view of fig. 6.
Wherein the reference numerals include: the manufacturing method comprises the following steps of 1-front fixing plate, 2-rear fixing plate, 3-single-strip-shaped upper mounting column, 4-double-strip-shaped upper mounting column, 5-silicon chip, 6-clamping groove, 7-furnace tube, 8-single-strip-shaped lower mounting column and 9-double-strip-shaped lower mounting column.
Detailed Description
In order to make the technical solutions of the present invention better understood, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
It should be noted that the terms "first," "second," and the like in the description and claims of the present invention and in the drawings described above are used for distinguishing between similar elements and not necessarily for describing a particular sequential or chronological order. It is to be understood that the data so used is interchangeable under appropriate circumstances such that the embodiments of the invention described herein are capable of operation in sequences other than those illustrated or described herein. Furthermore, the terms "comprises," "comprising," and "having," and any variations thereof, are intended to cover a non-exclusive inclusion, such that a process, method, apparatus, article, or device that comprises a list of steps or elements is not necessarily limited to those steps or elements expressly listed, but may include other steps or elements not expressly listed or inherent to such process, method, article, or device.
In an embodiment of the present invention, a quartz boat for silicon wafers is provided, specifically referring to fig. 1 to 5, which includes a front fixing plate 1 and a rear fixing plate 2 disposed opposite to each other in a front-rear direction, and a plurality of upper mounting posts and a plurality of lower mounting posts fixedly disposed between the front fixing plate 1 and the rear fixing plate 2, wherein the upper mounting posts and the lower mounting posts both extend in the front-rear direction, the upper mounting posts and the lower mounting posts are disposed in one-to-one correspondence in the up-down direction, and a hollow space for accommodating a silicon wafer 5 is disposed between the upper mounting posts and the lower mounting posts. Front and back refer to the y-axis direction in fig. 5, up and down refer to the z-axis direction in fig. 5, and left and right refer to the x-axis direction in fig. 5.
The silicon wafer taking device is characterized in that clamping grooves 6 used for coating the side edges of a silicon wafer 5 are respectively arranged on the upper mounting column and the lower mounting column, the clamping grooves 6 on the upper mounting column and the clamping grooves 6 on the lower mounting column are arranged in a one-to-one correspondence manner along the vertical direction, the notch of the clamping groove 6 on the upper mounting column is arranged opposite to the notch of the corresponding clamping groove 6 on the lower mounting column, so that the silicon wafer 5 placed between the upper mounting column and the lower mounting column is limited to move downwards (the groove bottom of the clamping groove 6 on the upper mounting column faces upwards, the notch faces downwards, the groove bottom of the corresponding clamping groove 6 on the lower mounting column faces downwards, the silicon wafer is placed from top to bottom, the clamping groove placed between the upper mounting column and the lower mounting column cannot move downwards, when the silicon wafer is taken out, the silicon wafer is lifted upwards, the plane where the silicon wafer 5 is located is parallel to a reference vertical plane extending along the vertical direction, or an included angle is kept between the plane, the angle is preferably greater than 0 ° and less than 30 °.
The reference vertical surface is perpendicular to the extending direction of the upper mounting column and the extending direction of the lower mounting column. If the front fixing plate 1 and the rear fixing plate 2 are arranged in parallel, the upper mounting column and the lower mounting column are perpendicular to the front fixing plate 1 and the rear fixing plate 2, the reference vertical surface is arranged in parallel with the front fixing plate 1 and the rear fixing plate 2, and the reference vertical surface is perpendicular to a horizontal plane (namely a plane on which a quartz boat is placed).
The specific structure of the upper mounting column is as follows: the upper mounting columns comprise two single-strip-shaped upper mounting columns 3 and one or more double-strip-shaped upper mounting columns 4, the double-strip-shaped upper mounting columns 4 are arranged between the two single-strip-shaped upper mounting columns 3, one end of each single-strip-shaped upper mounting column 3 is provided with a plurality of clamping grooves 6, and the left end portion and the right end portion of each double-strip-shaped upper mounting column 4 are provided with a plurality of clamping grooves 6.
The specific structure of the lower mounting column is as follows: the lower mounting columns comprise two single-strip lower mounting columns 8 and one or more double-strip lower mounting columns 9, the double-strip lower mounting columns 9 are arranged between the two single-strip lower mounting columns 8, one end of each single-strip lower mounting column 8 is provided with a plurality of clamping grooves 6, and the left end portion and the right end portion of each double-strip lower mounting column 9 are provided with a plurality of clamping grooves 6.
Spaces for placing the silicon wafers 5 are arranged among the single-strip-shaped upper mounting column 3, the double-strip-shaped upper mounting column 4, the single-strip-shaped lower mounting column 8 and the double-strip-shaped lower mounting column 9, namely four corners of the silicon wafers are respectively placed in the corresponding slots, and the silicon wafers cannot be separated from the stand columns downwards in the vertical direction (Z axis); and/or a space for placing the silicon wafer 5 is arranged between the adjacent double-strip-shaped upper mounting column 4 and the adjacent double-strip-shaped lower mounting column 9, and the silicon wafer cannot be separated from the upright column downwards in the vertical direction (Z axis).
According to the invention, the double-strip-shaped upper mounting columns 4 and the double-strip-shaped lower mounting columns 9 are arranged, so that the number of the placed silicon wafers can be increased, and the production efficiency is greatly improved.
Furthermore, one or more middle mounting columns are arranged between the upper mounting column and the lower mounting column on the same vertical plane (Z-axis direction), the middle mounting columns, the upper mounting columns and the lower mounting columns are arranged in a one-to-one correspondence manner from top to bottom, each middle mounting column comprises two single-strip-shaped middle mounting columns and one or more double-strip-shaped middle mounting columns, each double-strip-shaped middle mounting column is arranged between the two single-strip-shaped middle mounting columns, each single-strip-shaped middle mounting column is a vertical column with a plurality of clamping grooves at one end, and each double-strip-shaped middle mounting column is a vertical column with a plurality of clamping grooves at the left end part and the right end part; spaces for placing silicon wafers 5 are arranged among the single-strip-shaped upper mounting column, the single-strip-shaped middle mounting column, the single-strip-shaped lower mounting column, the double-strip-shaped upper mounting column, the double-strip-shaped middle mounting column and the double-strip-shaped lower mounting column, and/or spaces for placing the silicon wafers 5 are arranged among the adjacent double-strip-shaped upper mounting column, the adjacent double-strip-shaped middle mounting column and the adjacent double-strip-shaped lower mounting column, namely four edges of the silicon wafers are respectively placed in the corresponding grooves, and the silicon wafers cannot be separated from the stand columns downwards in the up-down direction (Z axis).
The specific structure of the clamping groove 6 is as follows: each clamping groove 6 is provided with a front side wall, a rear side wall and a groove bottom wall, wherein the front side wall and the rear side wall are arranged in a front-back opposite mode, the groove bottom wall is used for connecting the front side wall and the rear side wall, and the front side wall and the rear side wall are arranged in parallel. The outer edge of each clamping groove 6 is of an arc-shaped, square or diamond-shaped structure, preferably of an arc-shaped structure, and when a silicon wafer is placed, the silicon wafer cannot be collided and scratched. The distance between the front side wall and the rear side wall of each clamping groove 6 is adjusted according to the thickness of the silicon wafer. The depth of each card slot 6 is preferably the same, and each card slot 6 is parallel to each other.
The front fixing plate 1 and the rear fixing plate 2 are both of a strip-shaped structure, such as a square structure, a diamond structure or an oval structure.
Preceding fixed plate 1, last erection column, lower erection column and after-fixing board 2 are integrated into one piece structure, or go up the equal detachably setting of erection column, lower erection column on preceding fixed plate 1 and after-fixing board 2, conveniently dismantle the change, if the welding, through fastener (bolt and nut subassembly) or through the plug mode.
The invention also provides a novel silicon wafer placing mode, which specifically refers to fig. 6 to 10, and comprises the following steps: the silicon wafer is placed in a furnace tube by a quartz boat, the furnace tube is of a hollow tubular structure, and the placing mode is as follows: the quartz boat comprises a front fixing plate 1 and a rear fixing plate 2 which are arranged oppositely in the front and rear direction, and a plurality of upper mounting columns and a plurality of lower mounting columns which are arranged between the front fixing plate 1 and the rear fixing plate 2, wherein the upper mounting columns and the lower mounting columns extend along the front and rear direction, the upper mounting columns and the lower mounting columns are arranged in one-to-one correspondence along the up and down direction, and a hollow space for accommodating a silicon wafer 5 is arranged between the upper mounting columns and the lower mounting columns; go up all to be equipped with the draw-in groove 6 that is used for 5 sides of cladding silicon chip on erection column and the erection column down, go up draw-in groove 6 on the erection column and the draw-in groove 6 one-to-one setting on the erection column down, just go up the notch of draw-in groove 6 on the erection column and the notch of the draw-in groove 6 that corresponds on the erection column down and set up relatively to the restriction is placed at last erection column and is moved 5 of the interior silicon chip of draw-in groove 6 that the erection column corresponds down, and is makeed 5 place plane of silicon chip is parallel with the vertical face of benchmark that extends along upper and lower direction, or keep the contained angle between 5 place planes of silicon chip and the vertical face of benchmark, wherein, the vertical face of benchmark with the extending direction of last erection column, the extending direction.
Quartz boat level sets up in boiler tube 7 (along the length direction setting of boiler tube promptly), the lower erection column of quartz boat is close to the bottom of boiler tube 7 than last erection column, and the tank bottom of draw-in groove 6 is up on each last erection column, and the notch is down, and the tank bottom of the draw-in groove 6 that corresponds on each lower erection column is down, and the notch is up, it is provided with the silicon chip with the draw-in groove 6 that the erection column corresponds down to go up the erection column, preceding fixed plate 1 is close to the boiler tube front side, after-fixing board 2 is close to the boiler tube rear side, and the front side rear side indicates with boiler tube length direction vertically direction.
The axial lead direction (referring to the x-axis direction in fig. 6) of the furnace tube 7 is parallel to the airflow direction (referring to the x-axis direction in fig. 6, and the airflow direction refers to the direction indicated by the arrow in fig. 8) of the gas introduced into the furnace tube 7, the plane where the silicon wafer 5 is located is parallel to the axial lead of the furnace tube 7, or an included angle is formed between the plane where the silicon wafer 5 is located and the axial lead of the furnace tube 7, wherein the axial lead of the furnace tube 7 is parallel to the reference vertical plane.
Specifically, a plane where one end of the furnace tube 7 is located is a vertical plane (i.e., a radial plane) perpendicular to an axial lead of the furnace tube 7 (the plane where the original silicon wafer is located is parallel to the vertical plane), the reference vertical plane is perpendicular to the vertical plane, the gas flow direction is parallel to the reference vertical plane, and both the vertical plane and the reference vertical plane extend in the up-down direction.
One or two silicon wafers are placed in the plurality of clamping grooves on the same horizontal plane, and when one silicon wafer is placed, a space for gas to pass through along the length direction of the furnace tube is formed between every two adjacent silicon wafers 5; when two silicon wafers are placed, a space for gas to pass through linearly along the length direction of the furnace tube is formed between the two silicon wafers 5 and the two adjacent silicon wafers 5. The plane of the silicon wafer 5 is parallel to the reference vertical plane, or an included angle is kept between the plane of the silicon wafer 5 and the reference vertical plane (the included angle is greater than 0 degree and less than 45 degrees, preferably, the included angle is greater than 0 degree and less than 30 degrees), the reference vertical plane is parallel to the axis of the furnace tube 7, preferably, the reference vertical plane is parallel to the front fixing plate 1 and the rear fixing plate 2, and the reference vertical plane is perpendicular to the horizontal plane.
The plane where the silicon wafer is located is parallel to the reference vertical plane or forms a certain inclination angle (generally between 0-30 degrees) with the reference vertical plane, the silicon wafer is placed in a quartz boat, airflow is guided into the whole silicon wafer area by a similar guide plate structure formed by the silicon wafer when entering the silicon wafer area, the direction of the airflow passing through the silicon wafer is not obstructed by the silicon wafer, the airflow is easily guided to the silicon wafer far away from an air source, the difference of diffusion between the periphery of the silicon wafer and the center of the silicon wafer is small during gas diffusion, the difference of diffusion between the silicon wafer close to the air source and the silicon wafer far away from the silicon wafer is small, and the loss of the air source is reduced when the airflow smoothly passes through the silicon wafer.
The plane of the silicon wafer is parallel to the direction of the air flow, or a certain included angle is formed between the plane of the silicon wafer and the direction of the air flow, so that the blocking effect of the silicon wafer on the air flow is reduced, the uniformity in the silicon wafer is more consistent after the diffusion process is carried out in the actual production, the difference between different silicon wafers is smaller, and the silicon wafer diffusion device is suitable for the development trend of the silicon wafer with larger size (the silicon wafer with different sizes can be placed adaptively by adjusting the distance between the upper mounting column and the lower mounting column and the distance between the adjacent mounting columns); the silicon wafer extending direction (referring to the x-axis direction in fig. 6, the silicon wafer extends along the length direction of the furnace tube, and the silicon wafer extending direction also refers to the placing direction) is parallel to the length direction of the furnace tube (the length direction of the furnace tube is parallel to the axial lead direction), so that the space utilization rate of the furnace tube is high, the plane where the original silicon wafer is located is parallel to the vertical plane (the plane where one end part of the furnace tube 7 is located).
Comparing the boron diffusion and the phosphorus diffusion in the prior art, silicon wafers with the same size (M6, size is 166mmx166mm) are placed in furnace tubes with the same volume at the same point, and are detailed in tables 1 and 2:
table 1 boron diffusion comparison table of this scheme and the existing scheme
Table 2 phosphorus expansion comparison table for this scheme and the existing scheme
In tables 1 and 2, the uniformity is obtained by the sheet resistance meter test, and under two diffusion conditions, the uniformity of the present application is smaller than that of the existing scheme, and the smaller the uniformity value is, the better the differentiation is. The space utilization rate means that the diffusion device occupies the space of the furnace tube, and the larger the space utilization rate is, the larger the number of the silicon wafers with the same size is placed. In boron diffusion, energy loss means that after process gas is introduced for diffusion, when the uniformity of the boron diffusion process gas reaches 6%, the process gas with lower capacity needs to be introduced, the uniformity of the existing scheme can only reach 7%, and the process gas with higher capacity needs to be introduced, so that the boron diffusion process gas can ensure better uniformity when a smaller amount of process gas is introduced (the required process gas can be saved by 30%).
In addition, the quartz boat improved by the application can be used for placing M10 or M12 large-size silicon wafers, the size of M10 is 180mmx180mm, and the size of M12 is 210mmx210 mm.
If the large silicon wafer of M10 is used in the method and the existing scheme, the uniformity value tested by the method is smaller than that of the existing scheme after the diffusion process is carried out in the production; if the large silicon wafer of M12 is used in the method and the existing scheme, the uniformity value tested in the method is smaller than that in the existing scheme, after the diffusion process is carried out by using the method, the uniformity in the silicon wafer is more consistent due to the fact that the special gas and the silicon wafer fully react, and the uniformity is more obvious than the advantages of the existing scheme.
The silicon chip that this application provided is placed with certain angle slope, and the angle is preferred within 0-30, places two silicon chips that fold together with the mode back to back in a draw-in groove in the actual production, can not have gas to pass through between these two silicon chips, and the slope sets up the back under self action of gravity, and two silicon chips can not produce the space in the middle of closely laminating, can prevent to produce the air current and pass through the clearance of silicon chip, can effectively control the silicon chip like this around expand with the problem of rich plating.
According to the novel silicon wafer placing mode provided by the invention, the plane of the silicon wafer is parallel to the airflow direction, or a certain included angle is formed between the plane of the silicon wafer and the airflow direction, so that the blocking effect of the silicon wafer on the airflow is reduced, the uniformity of the silicon wafer in the wafer is more consistent after a diffusion process is carried out in production, the difference between different silicon wafers is smaller, and the novel silicon wafer placing mode has a development trend suitable for silicon wafers with larger sizes; the silicon wafer placing direction is consistent with the length direction of the furnace tube, so that the space utilization rate of the furnace tube is improved, and the productivity and the energy utilization rate are improved; the quartz boat for the silicon wafer has the advantages of simple structure and convenience in processing and manufacturing.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents, improvements and the like that fall within the spirit and principle of the present invention are intended to be included therein.
Claims (10)
1. The quartz boat for the silicon wafers is characterized by comprising a front fixing plate (1) and a rear fixing plate (2) which are oppositely arranged in front and back, and a plurality of upper mounting columns and a plurality of lower mounting columns which are arranged between the front fixing plate (1) and the rear fixing plate (2), wherein the upper mounting columns and the lower mounting columns are arranged in a one-to-one correspondence manner, and a hollow space for accommodating a silicon wafer (5) is arranged between the upper mounting columns and the lower mounting columns;
go up the erection column and all be equipped with draw-in groove (6) that are used for cladding silicon chip (5) side down on the erection column, draw-in groove (6) on going up the erection column and the erection column down draw-in groove (6) one-to-one sets up, just go up the notch of draw-in groove (6) on the erection column and the notch of the draw-in groove (6) that corresponds on the erection column down sets up relatively to the restriction is placed at silicon chip (5) in draw-in groove (6) that last erection column corresponds with the erection column down, and makes silicon chip (5) place the plane is parallel with the vertical face of benchmark that extends along upper and lower direction, or keep the contained angle between silicon chip (5) place plane and the vertical face of benchmark, wherein, vertical face of benchmark with the extending direction of last erection column, the extending direction of erection column all set up perpendicularly down.
2. The quartz boat for silicon wafers according to claim 1, wherein the angle is greater than 0 ° and less than 45 °.
3. The quartz boat for silicon wafers as claimed in claim 1 or 2, wherein the upper mounting columns comprise two single-bar-type upper mounting columns (3), one or more double-bar-type upper mounting columns (4), the double-bar-type upper mounting columns (4) are disposed between the two single-bar-type upper mounting columns (3), one end of the single-bar-type upper mounting column (3) is provided with a plurality of clamping grooves (6), and both left and right ends of the double-bar-type upper mounting column (4) are provided with a plurality of clamping grooves (6);
the lower mounting columns comprise two single-strip-shaped lower mounting columns (8) and one or more double-strip-shaped lower mounting columns (9), the double-strip-shaped lower mounting columns (9) are arranged between the two single-strip-shaped lower mounting columns (8), one end of each single-strip-shaped lower mounting column (8) is provided with a plurality of clamping grooves (6), and the left end part and the right end part of each double-strip-shaped lower mounting column (9) are provided with a plurality of clamping grooves (6);
spaces for placing the silicon wafers (5) are arranged between the single-strip-shaped upper mounting column (3), the double-strip-shaped upper mounting column (4), the single-strip-shaped lower mounting column (8) and the double-strip-shaped lower mounting column (9), and/or spaces for placing the silicon wafers (5) are arranged between the adjacent double-strip-shaped upper mounting column (4) and the adjacent double-strip-shaped lower mounting column (9).
4. The quartz boat for silicon wafers as set forth in claim 1, wherein each of the slots (6) has a front side wall and a rear side wall which are disposed opposite to each other in a front-rear direction, and a bottom wall for connecting the front side wall and the rear side wall, the front side wall and the rear side wall being disposed in parallel.
5. The quartz boat for silicon wafers as set forth in claim 4, wherein the outer edge of each of the slots (6) has an arc, square or diamond structure.
6. The quartz boat for silicon wafers as claimed in claim 1, wherein the front fixing plate (1), the upper mounting posts, the lower mounting posts and the rear fixing plate (2) are integrally formed, or the upper mounting posts and the lower mounting posts are detachably disposed on the front fixing plate (1) and the rear fixing plate (2).
7. The quartz boat for silicon wafers as claimed in claim 1, wherein the front fixing plate (1) and the rear fixing plate (2) are both of a strip-shaped structure.
8. The quartz boat for silicon wafers as claimed in claim 1, wherein the front fixing plate (1) and/or the rear fixing plate (2) are provided with one or more heat conducting openings.
9. A silicon wafer placing method is characterized by comprising the following steps:
the quartz boat for silicon wafers according to any one of claims 1 to 8 is placed in a furnace tube, the furnace tube has a hollow tubular structure, and the placing manner is as follows: the quartz boat is horizontally arranged in the furnace tube, a lower mounting column of the quartz boat is closer to the bottom of the furnace tube than an upper mounting column, a notch of a clamping groove on the upper mounting column faces downwards, a groove bottom of a corresponding clamping groove on the lower mounting column faces downwards and the notch faces upwards, and a silicon wafer is arranged in the clamping groove corresponding to the upper mounting column and the lower mounting column; the axial lead direction of the furnace tube is parallel to the airflow direction of the gas introduced into the furnace tube, the plane of each silicon wafer is parallel to the axial lead of the furnace tube, or an included angle is formed between the plane of each silicon wafer and the axial lead of the furnace tube, wherein the axial lead of the furnace tube is parallel to the reference vertical plane.
10. The silicon wafer placement as claimed in claim 9 wherein the included angle is greater than 0 ° and less than 45 °.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010894109 | 2020-08-31 | ||
| CN202010894109X | 2020-08-31 |
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| CN112735996A true CN112735996A (en) | 2021-04-30 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202110069338.2A Pending CN112735996A (en) | 2020-08-31 | 2021-01-19 | Quartz boat for silicon wafer and silicon wafer placing mode |
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| CN (1) | CN112735996A (en) |
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| CN109371383A (en) * | 2018-12-25 | 2019-02-22 | 南京爱通智能科技有限公司 | A kind of carrier suitable for ultra-large atomic layer deposition apparatus |
| CN109385622A (en) * | 2018-12-25 | 2019-02-26 | 南京爱通智能科技有限公司 | A kind of flow passage structure suitable for super large-tonnage atomic layer deposition apparatus |
| CN116516317A (en) * | 2023-04-12 | 2023-08-01 | 江苏微导纳米科技股份有限公司 | Carrier boat, treatment equipment and method for controlling pressure drop in carrier boat |
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| CN202721112U (en) * | 2012-06-28 | 2013-02-06 | 杭州大和热磁电子有限公司 | Quartz boat placing silicon wafers longitudinally |
| CN209000889U (en) * | 2018-11-27 | 2019-06-18 | 苏州阿特斯阳光电力科技有限公司 | A kind of quartz boat |
| CN210925970U (en) * | 2019-11-05 | 2020-07-03 | 苏州阿特斯阳光电力科技有限公司 | Silicon wafer deposition device and quartz boat |
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| US20120021552A1 (en) * | 2010-07-23 | 2012-01-26 | Stion Corporation | Quartz Boat Method and Apparatus for Thin Film Thermal Treatment |
| CN202363506U (en) * | 2011-10-31 | 2012-08-01 | 晶澳（扬州）太阳能科技有限公司 | Quartz boat |
| CN202721112U (en) * | 2012-06-28 | 2013-02-06 | 杭州大和热磁电子有限公司 | Quartz boat placing silicon wafers longitudinally |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN109371383A (en) * | 2018-12-25 | 2019-02-22 | 南京爱通智能科技有限公司 | A kind of carrier suitable for ultra-large atomic layer deposition apparatus |
| CN109385622A (en) * | 2018-12-25 | 2019-02-26 | 南京爱通智能科技有限公司 | A kind of flow passage structure suitable for super large-tonnage atomic layer deposition apparatus |
| CN116516317A (en) * | 2023-04-12 | 2023-08-01 | 江苏微导纳米科技股份有限公司 | Carrier boat, treatment equipment and method for controlling pressure drop in carrier boat |
| CN116516317B (en) * | 2023-04-12 | 2023-12-15 | 江苏微导纳米科技股份有限公司 | Carrier boat, treatment equipment and method for controlling pressure drop in carrier boat |
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