CN112735866B - Cu-VB for low-voltage electrical apparatus 2 -La contact material and preparation method thereof - Google Patents
Cu-VB for low-voltage electrical apparatus 2 -La contact material and preparation method thereof Download PDFInfo
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- CN112735866B CN112735866B CN202011514794.5A CN202011514794A CN112735866B CN 112735866 B CN112735866 B CN 112735866B CN 202011514794 A CN202011514794 A CN 202011514794A CN 112735866 B CN112735866 B CN 112735866B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H1/00—Contacts
- H01H1/02—Contacts characterised by the material thereof
- H01H1/021—Composite material
- H01H1/025—Composite material having copper as the basic material
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H11/00—Apparatus or processes specially adapted for the manufacture of electric switches
- H01H11/04—Apparatus or processes specially adapted for the manufacture of electric switches of switch contacts
- H01H11/048—Apparatus or processes specially adapted for the manufacture of electric switches of switch contacts by powder-metallurgical processes
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Composite Materials (AREA)
- Materials Engineering (AREA)
- Powder Metallurgy (AREA)
- Contacts (AREA)
Abstract
The invention discloses a Cu-VB for a low-voltage electrical apparatus 2 -La contact material and a method for the production thereof,the copper-based contact solves the problems that the copper-based contact has high contact resistance after long-term use and is seriously burnt under the condition of arc ablation, and the copper-based contact comprises the following components in parts by weight: VB 2 :40% -60%; la:0.2-0.3%, and the balance of Cu; wherein the weight ratio of Cu to La is 99.5:0.5. the preparation method needs VB with high melting point 2 Preparing a porous framework, and infiltrating liquid Cu into the framework by utilizing capillary force. The contact material is applied to low-voltage electrical appliances, can be used for a long time, and has low and stable contact resistance between contacts and good arc ablation resistance.
Description
Technical Field
The invention relates to a Cu-VB for a low-voltage electrical apparatus 2 -La contact material and a preparation method thereof.
Background
The contact is a core component of the low-voltage electrical appliance, plays a role in switching on, carrying and breaking current, and directly influences the safety and reliability of the low-voltage electrical appliance. The conventional contact material for the low-voltage electric appliance mostly takes silver as a matrix and is added with additives such as oxide, carbide, nickel, tungsten, graphite and the like to form a pseudo alloy so as to meet the use requirement of the electric appliance. However, silver has the disadvantages of low melting point, low boiling point, high price and the like, so people are always looking for contact materials for replacing silver.
Copper is the most likely silver substitute material, and has the conductivity and heat conductivity second to that of silver, and the price is only about 1% of that of silver. However, copper is easy to react with oxygen in the air to generate non-conductive copper oxide or cuprous oxide, and under the condition of long-term use, the contact resistance between contacts is sharply increased, so that the product fails. Copper has a low melting point and a low boiling point, similar to silver, and therefore, is relatively hard to burn out by arc ablation.
Disclosure of Invention
Based on the defects, the invention aims to provide the Cu-VB for the low-voltage electrical appliance 2 The La contact material is applied to low-voltage electrical appliances, can be used for ensuring that the contact resistance between contacts is low and stable under the condition of long-term use, has the characteristic of good arc ablation resistance, and solves the problems that the copper-based contact has high contact resistance after long-term use and is relatively serious in burning loss under the condition of arc ablation.
The invention adopts the following technology: cu-VB 2 -La contact material, the formulation consisting of by weight: VB 2 :40% -60%; la:0.2-0.3%, and the balance of Cu; wherein the weight ratio of Cu to La is 99.5:0.5.
the invention also provides the Cu-VB 2 The preparation method of the La contact material comprises the following steps:
powder mixing: mixing VB according to a formula 2 Uniformly mixing the powder, the La powder and copper powder accounting for 50% of the weight of all copper;
a pressing step: pressing the mixed powder into a plate material;
sintering: sintering the plate material into a porous framework plate material in a reducing atmosphere;
infiltration: infiltrating the residual weight of liquid Cu into the porous framework plate material for infiltration;
hot rolling: hot rolling the infiltrated plate to obtain a specified size;
and (3) annealing: and annealing the plate under the protection of protective gas, and further processing the plate into a contact material.
The invention also has the following technical characteristics:
1. the powder mixing step specifically comprises the following steps: VB with average particle size of 0.5-3 μm is prepared according to the above formula 2 Powder, -200-mesh La powder and-200-mesh copper powder accounting for 50 percent of the weight of the total copper are mixed for 4 hours by ball milling.
2. The sintering steps are specifically as follows: and (3) sintering the plate at 980 ℃ for 2h under a reducing atmosphere to prepare the porous framework.
3. The infiltration step is specifically as follows: and (3) placing the copper with the residual weight on the upper surface or the lower surface of the porous framework plate, and infiltrating for 0.5h at 1150 ℃.
4. The annealing step described above specifically is: and (3) annealing the plate for 1h under the protection of protective gas, wherein the annealing temperature is 850 ℃.
5. The preparation method as described above further finally comprises a polishing step: mixing the contact material with the white corundum abrasive, adding the polishing paste, and polishing for 0.5-1.5 hours.
The invention has the following advantages and beneficial effects: the contact material has good arc ablation resistance, and the preparation method needs VB with high melting point 2 Preparing a porous framework, and infiltrating liquid Cu into the framework by utilizing capillary force to realize; in addition, VB 2 Has excellent conductivity and oxidation resistance, and has oxidation resistance temperature in air over 1000 deg.C, so that sufficient VB is available even if oxidation of copper is generated in matrix 2 The contact resistance between the contacts can be ensured to be low and stable, thereby solving the problem of oxidation resistance of the copper-based contact. The addition of La can reduceLow liquid Cu and VB 2 The wetting angle between the two parts is ensured, thereby ensuring the infiltration quality and avoiding the residue of micro pores. The contact prepared by the invention has the resistivity less than 2.80 mu omega cm and the density more than 6.09g/cm 3 The porosity of the material is less than 0.5%.
Detailed Description
The invention is further illustrated by the following examples:
example 1
VB is prepared according to the weight content 2 :40 percent; la:0.3 percent; the balance of copper, wherein the weight ratio of Cu to La is 99.5:0.5.
step 1, mixing powder: 29.7Kg of-200 mesh copper powder was weighed and the average particle size was 3 μm VB 2 40Kg of powder, 0.3Kg of La powder with 200 meshes, is put into a ball milling powder mixer to be mixed for 4 hours, and the ball material ratio is 5:1;
step 2, pressing: the evenly mixed powder is pressed into blanks with the size of 70 x 300 x 5mm by an oil press, and the weight of each plate is 0.504Kg.
And step 3, sintering: sintering the blank plate at 980 ℃ for 2h under the protection of argon;
step 4, infiltration: placing 0.216Kg of copper plate in a graphite burning boat, placing the sintered single plate on the copper plate, infiltrating for 0.5h under the ammonia decomposition atmosphere at 1150 ℃, and cooling to room temperature;
step 5, hot rolling: hot rolling the infiltrated plate to the thickness of 2.2 mm;
step 6, annealing: annealing the plate for 1h under the protection of protective gas, wherein the annealing temperature is 850 ℃;
step 7, cold rolling: cold rolling the plate material to 2.0mm;
step 8, blanking; punching the plate into 4 multiplied by 6 multiplied by 2 parts;
step 9, shaping: the part is integrated into a size of 4 multiplied by 6 multiplied by 2/R30;
step 10, polishing: and putting the shaped part into a centrifugal polishing machine, and adding an alumina grinding material with the same weight for polishing for 1 hour.
VB finally obtained 2 :40 percent; la:0.3 percent; contact for copper allowance: density: greater than 6.8g/cm 3 (ii) a Resistivity: less than 2.30 muOmega cm; when the method is applied to the MCCB with the rated current of 100A, after the electric service life is 1 ten thousand times, the contact abrasion is small, and the temperature rise is less than 55K.
Example 2
VB is prepared according to the weight content 2 :60 percent; la:0.2 percent; the balance of copper, wherein the weight ratio of Cu to La is 99.5:0.5.
step 1, mixing powder: 19.8Kg of-200 mesh copper powder was weighed and the average particle size was 3 μm VB 2 60Kg of powder, 0.2Kg of La powder with-200 meshes, is put into a ball milling powder mixer to be mixed for 4 hours, and the ball material ratio is 5:1;
step 2, pressing: the evenly mixed powder is pressed into blanks with the thickness of 70 multiplied by 300 multiplied by 5mm by an oil press, and the weight of each plate is 0.517Kg.
Step 3, sintering: sintering the blank plate at 980 ℃ for 2h under the protection of argon;
step 4, infiltration: placing 0.129Kg of copper plate in a graphite burning boat, placing the sintered single plate on the copper plate, infiltrating for 0.5h under the ammonia decomposition atmosphere at 1150 ℃, and cooling to room temperature;
step 5, hot rolling: hot rolling the infiltrated plate to the thickness of 2.0mm;
step 6, annealing: annealing the plate for 1h under the protection of protective gas, wherein the annealing temperature is 850 ℃;
step 7, cold rolling: cold rolling the plate to 1.8mm;
step 8, blanking; punching the plate into parts of 5.5 multiplied by 7 multiplied by 1.8;
step 9, shaping: the parts are integrated into the size of 5.5 multiplied by 7 multiplied by 1.8/R30;
step 10, polishing: and putting the shaped part into a centrifugal polishing machine, and adding an alumina grinding material with the same weight for polishing for 1 hour.
VB finally obtained 2 :60 percent; la:0.2 percent; contact for copper allowance: density: greater than 6.1g/cm 3 (ii) a Resistivity: less than 2.80 μ Ω · cm; the current breaking circuit is applied to an MCCB with the rated current of 225A, the service life is 150 times after three times of current breaking of 50K, and the temperature rise of a contact is less than 65K.
Example 3
VB is prepared according to the weight content 2 :50 percent; la:0.25 percent; the balance of copper is the contact material, wherein the weight ratio of Cu to La is 99.5:0.5.
step 1, mixing powder: 24.75Kg of-200 mesh copper powder was weighed, and VB with an average particle size of 3 μm 2 50Kg of powder, 0.25Kg of La powder with 200 meshes, is put into a ball milling powder mixer to be mixed for 4 hours, and the ball material ratio is 5:1;
step 2, pressing: pressing the uniformly mixed powder into blanks of 70 x 300 x 5mm by an oil press, wherein the weight of each plate is 0.511Kg;
and step 3, sintering: sintering the blank plate at 980 ℃ for 2h under the protection of argon;
step 4, infiltration: placing 0.170Kg of copper plate in a graphite burning boat, placing the sintered single plate on the copper plate, infiltrating for 0.5h under the ammonia decomposition atmosphere at 1150 ℃, and cooling to room temperature;
step 5, hot rolling: hot rolling the infiltrated plate to the thickness of 2.7 mm;
step 6, annealing: annealing the plate for 1h under the protection of protective gas, wherein the annealing temperature is 850 ℃;
step 7, cold rolling: cold rolling the plate material to 2.5mm;
step 8, blanking; punching the plate into parts of 8 multiplied by 10 multiplied by 2.5;
step 9, shaping: the part is integrated into the size of 8 multiplied by 10 multiplied by 2.5/R40;
step 10, polishing: and putting the shaped part into a centrifugal polishing machine, and adding an alumina grinding material with the same weight for polishing for 1 hour.
VB finally obtained 2 :50 percent; la:0.25 percent; contact for copper allowance: density: greater than 6.4g/cm 3 (ii) a Resistivity: less than 2.60 [ mu ] omega cm; when the MCCB is applied to the MCCB with the rated current of 400A, after the MCCB breaks the current of 100K to the limit, the contact abrasion is small.
Claims (1)
1. Cu-VB 2 The La contact material comprises the following components in percentage by weight: VB 2 :40% -60%; la:0.2 to 0.3 percent; the balance of Cu, wherein the weight ratio of Cu to La is 99.5:0.5, the contact material is characterized by being prepared by the following method: according to the formula, the average particle size isVB of 0.5-3 mu m 2 Powder, -200-mesh La powder and-200-mesh copper powder accounting for 50 percent of the weight of the total copper are mixed for 4 hours by ball milling; a pressing step: pressing the mixed powder into a plate material; sintering: sintering the plate at 980 ℃ for 2h in reducing atmosphere, and sintering VB 2 Preparing a porous framework; infiltration: placing the copper with the residual weight on the upper surface or the lower surface of the porous framework plate, infiltrating for 0.5h at 1150 ℃, and infiltrating liquid Cu into the framework; hot rolling: hot rolling the infiltrated plate to obtain a specified size; and (3) annealing: annealing the plate for 1h under the protection of protective gas at 850 ℃, mixing the contact material with a white corundum abrasive, adding polishing paste, polishing for 0.5-1.5 h, and processing into the contact material, wherein the resistivity of the contact material is less than 2.80 mu omega-cm, and the density is more than 6.09g/cm 3 The porosity of the material is less than 0.5%.
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| CN112735866B true CN112735866B (en) | 2023-04-07 |
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| GB1177279A (en) * | 1966-04-08 | 1970-01-07 | Lockheed Aircraft Corp | Sintered Porous Metal Bodies |
| JPH0670888B2 (en) * | 1985-07-29 | 1994-09-07 | 株式会社東芝 | Method for manufacturing contact material for vacuum circuit breaker |
| CN1050215C (en) * | 1997-12-24 | 2000-03-08 | 王千 | Electric special alloy contact material for low-voltage electric appliance |
| KR100332513B1 (en) * | 1998-08-21 | 2002-04-13 | 니시무로 타이죠 | Contact material for vacuum valve and method for fabricating the same |
| CN1207740C (en) * | 2003-07-30 | 2005-06-22 | 哈尔滨工业大学 | Copper base electric contact compound material for contactor of electric appliances |
| CN1528709A (en) * | 2003-09-27 | 2004-09-15 | 哈尔滨工业大学 | TiB2 base metal-ceramic composite material and preparing method thereof |
| CN102828059B (en) * | 2012-09-27 | 2013-11-06 | 北京科技大学 | Preparation method of contact alloy for nano particle filled tungsten skeleton special structure |
| CN105047442B (en) * | 2015-07-13 | 2017-07-18 | 青海大学 | A kind of Ag CuO low-pressure contact materials and preparation method thereof |
| CN109207764B (en) * | 2018-09-26 | 2020-10-27 | 西安理工大学 | Method for strengthening CuW alloy by in-situ autogenous titanium diboride |
| CN110438383A (en) * | 2019-07-26 | 2019-11-12 | 全球能源互联网研究院有限公司 | A kind of arc resistant ablator and preparation method thereof, application |
| CN110976887B (en) * | 2019-12-17 | 2022-02-11 | 哈尔滨东大高新材料股份有限公司 | AgWC (T)/CuC (X) contact material and preparation method thereof |
| CN111676387A (en) * | 2020-06-08 | 2020-09-18 | 南昌航空大学 | Novel electrical contact material with RGO/Cu-Zr-La as component and preparation method thereof |
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