CN112732002B - Temperature calibration circuit, calibration method, sensor, electronic device and chip - Google Patents
Temperature calibration circuit, calibration method, sensor, electronic device and chip Download PDFInfo
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- CN112732002B CN112732002B CN202110353292.7A CN202110353292A CN112732002B CN 112732002 B CN112732002 B CN 112732002B CN 202110353292 A CN202110353292 A CN 202110353292A CN 112732002 B CN112732002 B CN 112732002B
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- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
- G05F1/10—Regulating voltage or current
- G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
- G05F1/56—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices
- G05F1/565—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor
- G05F1/567—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor for temperature compensation
Abstract
The invention provides a temperature calibration circuit, a calibration method, a sensor, electronic equipment and a chip, comprising the following steps: the selection module is used for respectively acquiring a temperature detection signal and a temperature reference signal at the same ambient temperature and selecting one of the signals for output; the analog-to-digital conversion module is used for converting the analog signal output by the selection module into a digital signal; the data storage module is used for storing the digital signals of the temperature detection signal and the temperature reference signal; and the calculation module is used for determining a voltage value based on the digital signal of the temperature detection signal, determining a temperature value based on the digital signal of the temperature reference signal, and obtaining a linear equation of the voltage value of the temperature detection signal and the ambient temperature according to the voltage value, the temperature value and the temperature coefficient of the temperature sensor. According to the invention, the temperature-voltage curve is determined through the voltage value, the reference temperature and the temperature coefficient of the temperature detection signal at the same temperature, and the temperature corresponding to the temperature detection signal at different temperatures is determined based on the temperature-voltage curve, so that the temperature detection precision and accuracy are improved.
Description
Technical Field
The present invention relates to the field of integrated circuits, and in particular, to a temperature calibration circuit, a calibration method, a sensor, an electronic device, and a chip.
Background
The development of integrated circuits is increasing, and only in the latter half century of their development, integrated circuits have become ubiquitous, and modern computing, communications, manufacturing and transportation systems, including the internet, all rely on the presence of integrated circuits. The integrated circuit is mainly prepared from semiconductor materials such as silicon, germanium, selenium and the like, and the temperature can affect the performance of the semiconductor materials, so that the temperature detection of the integrated circuit is very necessary to ensure the normal operation of the integrated circuit.
In the prior art, the temperature detection of the integrated circuit is realized through a temperature detection circuit, and the temperature detection circuits of the same batch of chips can detect by adopting the same temperature-voltage curve. However, in practical applications, a semiconductor device has process errors, and as shown in fig. 1, voltage values output by temperature detection circuits of different chips under the same temperature environment (23 ℃) may be different, that is, there is an offset (offset Vos1 or Vos2 in the vertical direction), and the offset voltage is not fixed, and the offset has an influence on temperature detection accuracy and accuracy.
Therefore, how to obtain the own specific temperature-voltage curve of each chip, eliminate the process deviation of the temperature-voltage curve, and improve the accuracy and precision of temperature detection becomes one of the problems to be solved by those skilled in the art.
Disclosure of Invention
In view of the above-mentioned drawbacks of the prior art, an object of the present invention is to provide a temperature calibration circuit, a calibration method, a sensor, an electronic device, and a chip.
To achieve the above and other related objects, the present invention provides a temperature calibration circuit, comprising:
the selection module is used for respectively acquiring a temperature detection signal and a temperature reference signal at the same ambient temperature, and selecting the temperature detection signal or the temperature reference signal to output;
the analog-to-digital conversion module is connected to the output end of the selection module and converts the analog signal output by the selection module into a digital signal;
the data storage module is connected to the output end of the analog-to-digital conversion module and used for storing the temperature detection signal and the digital signal of the temperature reference signal;
and the calculation module is connected to the output end of the data storage module, determines a voltage value based on the digital signal of the temperature detection signal, determines a temperature value based on the digital signal of the temperature reference signal, and obtains a linear equation of the voltage value of the temperature detection signal and the ambient temperature according to the voltage value, the temperature value and the temperature coefficient of the temperature sensor.
Optionally, the selection module includes a first switch and a second switch; the first end of the first switch receives the temperature detection signal, the first end of the second switch receives the temperature reference signal, and the second end of the first switch is connected with the second end of the second switch and connected with the input end of the analog-to-digital conversion module.
Optionally, the data storage module is a power-down non-erasable storage module
Optionally, the calculation module is implemented by an upper computer.
To achieve the above and other related objects, the present invention also provides a temperature sensor, including at least:
a temperature detection circuit that generates a temperature detection signal based on an ambient temperature;
the temperature calibration circuit is connected to the output end of the temperature detection circuit, obtains a linear equation of the output voltage of the temperature detection circuit and the ambient temperature based on the temperature detection signal, the temperature reference signal and the temperature coefficient of the temperature detection circuit at the same ambient temperature, and obtains the temperature corresponding to the temperature detection signal at different temperatures based on the linear equation.
Optionally, the temperature detection circuit includes a temperature detection module and a gain amplification module; the temperature detection module generates two negative temperature coefficient voltages; the gain amplification module is connected to the output end of the temperature detection module and used for amplifying the difference value of the two negative temperature coefficient voltages to obtain the temperature detection signal, and the temperature detection signal has a positive temperature coefficient.
More optionally, the temperature detection module includes a first bipolar transistor, a second bipolar transistor, a first current source, and a second current source; the first current source and the first bipolar transistor are sequentially connected in series between a power supply and the ground, the second current source and the second bipolar transistor are sequentially connected in series between the power supply and the ground, the collector and the base of the first bipolar transistor are in short circuit, and the base-emitter voltage of the first bipolar transistor and the base-emitter voltage of the second bipolar transistor are negative temperature coefficient voltages.
To achieve the above and other related objects, the present invention provides a temperature calibration method, comprising at least:
1) acquiring a temperature detection signal and a temperature reference signal at the same ambient temperature;
2) acquiring a temperature value corresponding to the temperature reference signal, and obtaining a linear equation of the voltage value of the temperature detection signal and the environment temperature based on the temperature value, the voltage value of the temperature detection signal and the temperature coefficient of the temperature sensor;
3) and acquiring temperatures corresponding to the temperature detection signals at different temperatures based on the linear equation.
Optionally, the step 1) includes sequentially obtaining a temperature detection signal and a temperature reference signal at the same ambient temperature, and respectively converting the temperature detection signal and the temperature reference signal into digital signals and storing the digital signals.
Optionally, the temperature coefficient of the temperature sensor satisfies the following relation:
where K is the temperature coefficient, N is the ratio of the current densities acting on the two negative temperature coefficient voltages, M is the amplification factor of the positive temperature coefficient voltage, VTIs the temperature coefficient voltage, T is the temperature.
To achieve the above and other related objects, the present invention provides an electronic device, comprising at least:
a temperature detection device that generates a temperature reference signal based on an ambient temperature;
the temperature sensor is connected to the output end of the temperature detection device, wherein the temperature detection circuit generates a temperature detection signal based on the ambient temperature, the temperature calibration circuit calculates a linear equation of the output voltage of the temperature detection circuit and the ambient temperature, and obtains the temperature corresponding to the temperature detection signal at different temperatures based on the linear equation.
To achieve the above and other related objects, the present invention provides a chip, which at least comprises:
a memory for storing computer execution instructions;
and the processor is used for executing the computer execution instruction to execute the temperature calibration method.
Optionally, the memory is further configured to store digital signals of the temperature detection signal and the temperature reference signal.
As described above, the temperature calibration circuit, the calibration method, the sensor, the electronic device, and the chip according to the present invention have the following advantageous effects:
according to the temperature calibration circuit, the calibration method, the sensor, the electronic equipment and the chip, the temperature-voltage curve specific to the circuit is determined through the voltage value of the temperature detection signal at the same temperature, the reference temperature and the temperature coefficient of the temperature sensor, and the temperatures corresponding to the temperature detection signals at different temperatures are determined based on the temperature-voltage curve, so that the temperature detection precision and accuracy are improved; meanwhile, the calibration circuit is simple in structure, and the calibration method is easy to operate and has universality.
Drawings
Fig. 1 shows a schematic diagram of the principle of the prior art of temperature sensing for the presence of a detuning.
Fig. 2 is a schematic structural diagram of the temperature calibration circuit according to the present invention.
Fig. 3 is a schematic structural diagram of the temperature sensor of the present invention.
Fig. 4 is a schematic structural diagram of an electronic device according to the present invention.
FIG. 5 is a schematic diagram illustrating the temperature calibration method of the present invention.
FIG. 6 is a schematic diagram of a chip according to the present invention.
Description of the element reference numerals
1-a temperature sensor; 11-a temperature calibration circuit; 111-a selection module; 112-analog-to-digital conversion module; 113-a data storage module; 114-a calculation module; 12-a temperature detection circuit; 121-temperature detection module; 122-a gain amplification module; 2-temperature detection means; 3-a processor; 4-memory.
Detailed Description
The embodiments of the present invention are described below with reference to specific embodiments, and other advantages and effects of the present invention will be easily understood by those skilled in the art from the disclosure of the present specification. The invention is capable of other and different embodiments and of being practiced or of being carried out in various ways, and its several details are capable of modification in various respects, all without departing from the spirit and scope of the present invention.
Please refer to fig. 2 to fig. 6. It should be noted that the drawings provided in the present embodiment are only for illustrating the basic idea of the present invention, and the components related to the present invention are only shown in the drawings rather than drawn according to the number, shape and size of the components in actual implementation, and the type, quantity and proportion of the components in actual implementation may be changed freely, and the layout of the components may be more complicated.
Example one
As shown in fig. 2, the present embodiment provides a temperature calibration circuit 11, where the temperature calibration circuit 11 includes:
a selection module 111, an analog-to-digital conversion module 112, a data storage module 113 and a calculation module 114.
As shown in fig. 2, the selection module 111 respectively obtains a temperature detection signal Vtem and a temperature reference signal Vref at the same environmental temperature, and selects the temperature detection signal Vtem or the temperature reference signal Vref for output.
Specifically, in the present embodiment, the selection module 111 includes a first switch PH1 and a second switch PH 2. A first terminal of the first switch PH1 receives the temperature detection signal Vtem, a first terminal of the second switch PH2 receives the temperature reference signal Vref, and a second terminal of the first switch PH1 is connected to a second terminal of the second switch PH2 and to an input terminal of the analog-to-digital conversion module 12. Wherein the first switch PH1 and the second switch PH2 are not turned on at the same time.
As shown in fig. 2, the analog-to-digital conversion module 112 is connected to the output end of the selection module 111, and converts the analog signal output by the selection module 111 into a digital signal.
Specifically, in the present embodiment, the digital signal of the temperature detection signal Vtem is CODE1, and the digital signal of the temperature reference signal Vref is CODE 2. The number of bits of the analog-to-digital conversion module 112 can be set as required, which is not described herein, and any circuit structure capable of implementing analog-to-digital conversion is suitable for the present invention.
As shown in fig. 2, the data storage module 113 is connected to the output end of the analog-to-digital conversion module 112, and is configured to store the digital signals of the temperature detection signal Vtem and the temperature reference signal Vref.
Specifically, in this embodiment, the data storage module 113 is a power-down non-erasable storage module, including but not limited to a Flash memory (Flash). As an example, the digital signal CODE1 of the temperature detection signal Vtem is stored in the first memory region DATA1 of the DATA memory module 113, and the digital signal CODE2 of the temperature reference signal Vref is stored in the second memory region DATA2 of the DATA memory module 113.
As shown in fig. 2, the calculating module 114 is connected to the output end of the data storage module 113, determines a voltage value based on the digital signal CODE1 of the temperature detecting signal Vtem, determines a temperature value based on the digital signal CODE2 of the temperature reference signal Vref, and obtains a linear equation between the voltage value of the temperature detecting signal and the ambient temperature according to the voltage value, the temperature value and the temperature coefficient K of the temperature sensor.
Specifically, the calculation module 114 reads the digital signal CODE1 of the temperature detection signal Vtem from the storage module 113 and determines a voltage value; reading the digital signal CODE2 of the temperature reference signal Vref from the storage module 113, and obtaining a corresponding temperature value through indexing; the calculation module 114 is internally provided with a temperature coefficient K of a temperature sensor, the temperature coefficient K is determined by device parameters of a circuit which detects the temperature detection signal Vtem, and the temperature coefficient K is determined as a fixed value after the circuit which detects the temperature is determined; based on the voltage value and the temperature value, a point can be obtained in a temperature-voltage coordinate system, and then the temperature coefficient K is taken as a slope, so that a linear equation of the voltage value of the temperature detection signal and the environment temperature can be determined.
Specifically, in this embodiment, the computing module 114 is implemented by an upper computer; in practical use, any device capable of obtaining a temperature-voltage characteristic curve based on a voltage value, a temperature value and a temperature coefficient is suitable, and is not limited to this embodiment.
It should be noted that the linear equation of the voltage value and the ambient temperature is a temperature-voltage characteristic curve specific to the circuit for detecting the temperature detection signal, and the temperature corresponding to the temperature detection signal at different temperatures can be determined by using the temperature-voltage characteristic curve, so that the temperature detection precision and accuracy are greatly improved.
Example two
As shown in fig. 3, the present embodiment provides a temperature sensor 1, the temperature sensor 1 including:
a temperature detection circuit 12 and a temperature calibration circuit 11.
As shown in fig. 3, the temperature detection circuit 12 generates a temperature detection signal Vtem based on the ambient temperature.
Specifically, in the present embodiment, the temperature detection circuit 12 includes a temperature detection module 121 and a gain amplification module 122. The temperature detection module 121 generates two negative temperature coefficient voltages. The gain amplifying module 122 is connected to the output end of the temperature detecting module 121, and configured to amplify a difference between the two negative temperature coefficient voltages to obtain the temperature detecting signal Vtem, where the temperature detecting signal Vtem has a positive temperature coefficient.
More specifically, the temperature detecting module 121 includes a first bipolar transistor M1, a second bipolar transistor M2, a first current source I1 and a second current source I2, the first current source I1 and the first bipolar transistor M1 are sequentially connected in series between a power supply VDD and a ground GND, the second current source I2 and the second bipolar transistor M2 are sequentially connected in series between the power supply VDD and the ground GND, collectors and bases of the first bipolar transistor M1 and the second bipolar transistor M2 are shorted, and base-emitter voltages of the first bipolar transistor M1 and the second bipolar transistor M2 are respectively a negative temperature coefficient voltage. The first bipolar transistor M1 and the second bipolar transistor M2 have the same area, the magnitude of the current provided by the first current source I1 is N times (N × I and I, respectively) the magnitude of the current provided by the second current source I2, and N is a number greater than 1. As an example, the first bipolar transistor M1 and the second bipolar transistor M2 are PNP transistors. The collector and base of the first bipolar transistor M1 are grounded GND, the emitter is connected to a power supply VDD via the first current source I1, and the emitter of the first bipolar transistor M1 outputs a first base-emitter voltage Vbe 1; the collector and base of the second bipolar transistor M2 are grounded GND, the emitter is connected to a supply voltage VDD via the second current source I2, and the emitter of the second bipolar transistor M2 outputs a second base-emitter voltage Vbe 2. In practical use, the first bipolar transistor M1 and the second bipolar transistor M2 may employ NPN transistors, and the specific connection relationship is adaptively adjusted, which is not described herein.
More specifically, the non-inverting input terminal of the gain amplifying module 122 receives the first base-emitter voltage Vbe1, and the inverting input terminal receives the second base-emitter voltage Vbe2, calculates a difference therebetween, and amplifies the difference. The amplification factor of the gain amplification module 122 is set to M, where M is a number greater than or equal to 1.
It should be noted that any circuit configuration that can obtain a temperature-dependent voltage, including but not limited to positive temperature coefficient voltages and negative temperature coefficient voltages, is suitable for use in the present invention.
As shown in fig. 3, the temperature calibration circuit 11 is connected to the output end of the temperature detection circuit 12, obtains a linear equation of the output voltage of the temperature detection circuit 12 and the ambient temperature based on the temperature detection signal Vtem, the temperature reference signal Vref, and the temperature coefficient K of the temperature detection circuit 12 at the same ambient temperature, and obtains the temperatures corresponding to the temperature detection signals Vtem at different temperatures based on the linear equation.
Specifically, the temperature calibration circuit 11 acquires the temperature detection signal Vtem output by the temperature detection circuit 12, and calibrates the temperature-voltage curve of the temperature detection circuit 12 by combining the temperature reference signal Vref and the temperature coefficient K; the details of the structure are described in the first embodiment, and are not repeated herein. After the temperature-voltage curve is determined, the ambient temperature corresponding to the output voltage of the temperature detection circuit 12 can be found on the temperature-voltage curve.
It should be noted that, the temperature sensor 1 is usually integrated as a functional module circuit inside a chip, the structure is simple, and the temperature detection signal Vtem output by the temperature detection circuit 12 is accurate with temperature change (i.e. the slope K is accurate); the detection of the absolute temperature needs to be achieved by calibration of the temperature calibration circuit 11.
EXAMPLE III
As shown in fig. 4, the present embodiment provides an electronic device, including:
a temperature sensor 1 and a temperature detection device 2.
As shown in fig. 4, the temperature detection device 2 generates a temperature reference signal Vref based on the ambient temperature.
Specifically, the temperature detection device 2 is disposed outside the temperature sensor 1, detects the ambient temperature, and the signal detected by the temperature detection device 2 is provided to the temperature sensor 1 as the temperature reference signal Vref. The temperature detection device 2 can adopt an external temperature detection chip to detect the absolute temperature of the environment, including but not limited to a high-precision commercial temperature detection chip, which is not repeated herein.
As shown in fig. 4, the temperature sensor 1 is connected to the output end of the temperature detection device 2, and is configured to obtain a linear equation between the output voltage of the temperature detection circuit 12 and the ambient temperature, and obtain the temperatures corresponding to the temperature detection signals Vtem at different temperatures based on the linear equation.
Specifically, the structure and principle of the temperature sensor 1 can be found in the first embodiment and the second embodiment, which are not described herein again.
Example four
The present embodiment provides a temperature calibration method, where the temperature calibration method includes:
1) and acquiring a temperature detection signal Vtem and a temperature reference signal Vref under the same environmental temperature.
2) And acquiring a temperature value corresponding to the temperature reference signal Vref, and obtaining a linear equation of the voltage value of the temperature detection signal and the environment temperature based on the temperature value, the voltage value of the temperature detection signal Vtem and the temperature coefficient K of the temperature sensor.
3) Acquiring temperatures corresponding to the temperature detection signal Vtem at different temperatures based on the linear equation.
As shown in fig. 4, as an example, the temperature calibration method is implemented based on the electronic device of the third embodiment, and specifically includes the following steps:
1) the second switch PH2 is opened, the first switch PH1 is closed, a temperature detection signal Vtem at the same ambient temperature at the current ambient temperature is acquired, and the temperature detection signal Vtem is converted into a digital signal CODE1 and stored. Then the first switch PH1 is opened, the second switch PH2 is closed, the temperature reference signal Vref at the same environmental temperature is acquired, and the temperature reference signal Vref is converted into a digital signal CODE2 and stored.
It should be noted that, the steps of obtaining the temperature detection signal Vtem and the temperature reference signal Vref do not have a necessary sequence, and the sequence may be switched or executed simultaneously. During step-by-step execution, the two signals are gated by the switch to perform analog-to-digital conversion, and two analog-to-digital conversion modules need to be provided during execution at the same time, which is not described herein.
2) Reading a CODE value of a digital signal CODE1 of the temperature detection signal Vtem, and determining a voltage value of the temperature detection signal Vtem; reading a CODE value of the digital signal CODE2 of the temperature reference signal Vref, and knowing that the digital signal CODE2 of the temperature reference signal Vref corresponds to a temperature value T by indexing the specification parameters of the temperature detection device 2, wherein the temperature value is the ambient temperature; and acquiring the temperature coefficient K of the temperature sensor 1. Based on the voltage value and the temperature value, a point can be obtained in a temperature-voltage coordinate system, and then a linear equation of the voltage value V of the temperature detection signal and the ambient temperature TEMP can be determined by using the temperature coefficient K as a slope, as shown in fig. 5, the linear equation is specific to the current temperature sensor 1.
More specifically, the temperature coefficient K of the temperature sensor 1 is determined based on the device parameter of the temperature detection circuit 12. In this embodiment, the current of the first current source I1 satisfies: n x I=Is1*e[Vbe1/(n*V T )]The current of the second current source I2 satisfies: i = Is2*e[Vbe2/(n*V T )](ii) a Wherein Is1 Is the saturation current of the first bipolar transistor M1; is2 Is the saturation current of the second bipolar transistor M2; vTIs a temperature coefficient voltage; n is the ratio of the current densities of two bipolar transistors generating positive temperature coefficient voltage (or the ratio of the current densities acting on two negative temperature coefficient voltages); n is constant, n =1 for a bipolar device. Since the areas of the first and second bipolar transistors M1 and M2 are equal, Is1=Is2Then Vbe1-Vbe2= VT*lnN，Vtem=M*(Vbe1-Vbe2)=M*VTlnN, where M is the amplification factor of the gain amplification module 122, VTThe temperature coefficient of (d) is 0.087 mV/deg.c, then simplified to get Vtem = K × T + V0; t is temperature, V0 is constant; k is a temperature coefficient and satisfies the following relational expression:
assuming M =10 and N =10, the temperature coefficient (i.e., slope) K of Vtem is =2mV/° c.
The temperature coefficient of the temperature sensor 1 can be determined based on the structure and parameters of the temperature detection circuit 12, and is not limited to this embodiment.
3) And sending a temperature detection instruction, closing the first switch PH1, opening the second switch PH2, acquiring a temperature detection signal Vtem under the current environmental temperature, reading a digital signal of the temperature detection signal Vtem, and calculating the corresponding temperature through a determined linear equation.
Specifically, as shown in fig. 5, when the temperature detection signal Vtem is equal to V1, a corresponding temperature T1 may be obtained; when the temperature detection signal Vtem is equal to V2, a corresponding temperature T2 may be obtained.
EXAMPLE five
As shown in fig. 6, the present embodiment provides a chip, which includes: a processor 3 and a memory 4.
As shown in fig. 6, the memory 4 is used to store computer-executable instructions.
As shown in fig. 6, the processor 3 is configured to execute the computer-executable instructions to perform the temperature calibration method according to the fourth embodiment.
As shown in fig. 6, as another implementation manner of the present invention, the memory 4 is further configured to store digital signals of the temperature detection signal Vtem and the temperature reference signal Vref.
In summary, the present invention provides a temperature calibration circuit, a calibration method, a sensor, an electronic device and a chip, including: the selection module is used for respectively acquiring a temperature detection signal and a temperature reference signal at the same ambient temperature, and selecting the temperature detection signal or the temperature reference signal to output; the analog-to-digital conversion module is connected to the output end of the selection module and converts the analog signal output by the selection module into a digital signal; the data storage module is connected to the output end of the analog-to-digital conversion module and used for storing the temperature detection signal and the digital signal of the temperature reference signal; and the calculation module is connected to the output end of the data storage module, determines a voltage value based on the digital signal of the temperature detection signal, determines a temperature value based on the digital signal of the temperature reference signal, and obtains a linear equation of the voltage value of the temperature detection signal and the ambient temperature according to the voltage value, the temperature value and the temperature coefficient of the temperature sensor. According to the temperature calibration circuit, the calibration method, the sensor, the electronic equipment and the chip, the temperature-voltage curve specific to the circuit is determined through the voltage value of the temperature detection signal at the same temperature, the reference temperature and the temperature coefficient of the temperature sensor, and the temperatures corresponding to the temperature detection signals at different temperatures are determined based on the temperature-voltage curve, so that the temperature detection precision and accuracy are improved; meanwhile, the calibration circuit is simple in structure, and the calibration method is easy to operate and has universality. Therefore, the invention effectively overcomes various defects in the prior art and has high industrial utilization value.
The foregoing embodiments are merely illustrative of the principles and utilities of the present invention and are not intended to limit the invention. Any person skilled in the art can modify or change the above-mentioned embodiments without departing from the spirit and scope of the present invention. Accordingly, it is intended that all equivalent modifications or changes which can be made by those skilled in the art without departing from the spirit and technical spirit of the present invention be covered by the claims of the present invention.
Claims (13)
1. A temperature calibration circuit, characterized in that the temperature calibration circuit comprises at least:
the selection module is used for respectively acquiring a temperature detection signal and a temperature reference signal at the same ambient temperature, and selecting the temperature detection signal or the temperature reference signal to output;
the analog-to-digital conversion module is connected to the output end of the selection module and converts the analog signal output by the selection module into a digital signal;
the data storage module is connected to the output end of the analog-to-digital conversion module and used for storing the temperature detection signal and the digital signal of the temperature reference signal;
and the calculation module is connected to the output end of the data storage module, determines a voltage value based on the digital signal of the temperature detection signal, determines a temperature value based on the digital signal of the temperature reference signal, and obtains a linear equation of the voltage value of the temperature detection signal and the ambient temperature according to the voltage value, the temperature value and the temperature coefficient of the temperature sensor.
2. The temperature calibration circuit of claim 1, wherein: the selection module comprises a first switch and a second switch; the first end of the first switch receives the temperature detection signal, the first end of the second switch receives the temperature reference signal, and the second end of the first switch is connected with the second end of the second switch and connected with the input end of the analog-to-digital conversion module.
3. The temperature calibration circuit of claim 1, wherein: the data storage module is a power-down non-erasable storage module.
4. The temperature calibration circuit of claim 1, wherein: the calculation module is realized by an upper computer.
5. A temperature sensor, characterized in that it comprises at least:
a temperature detection circuit that generates a temperature detection signal based on an ambient temperature;
the temperature calibration circuit according to any one of claims 1 to 4, connected to an output terminal of the temperature detection circuit, obtaining a linear equation of an output voltage of the temperature detection circuit and an ambient temperature based on the temperature detection signal, a temperature reference signal and a temperature coefficient of the temperature detection circuit at the same ambient temperature, and obtaining temperatures corresponding to the temperature detection signals at different temperatures based on the linear equation.
6. The temperature sensor of claim 5, wherein: the temperature detection circuit comprises a temperature detection module and a gain amplification module; the temperature detection module generates two negative temperature coefficient voltages; the gain amplification module is connected to the output end of the temperature detection module and used for amplifying the difference value of the two negative temperature coefficient voltages to obtain the temperature detection signal, and the temperature detection signal has a positive temperature coefficient.
7. The temperature sensor of claim 6, wherein: the temperature detection module comprises a first bipolar transistor, a second bipolar transistor, a first current source and a second current source; the first current source and the first bipolar transistor are sequentially connected in series between a power supply and the ground, the second current source and the second bipolar transistor are sequentially connected in series between the power supply and the ground, the collector and the base of the first bipolar transistor are in short circuit, and the base-emitter voltage of the first bipolar transistor and the base-emitter voltage of the second bipolar transistor are negative temperature coefficient voltages.
8. A temperature calibration method, characterized in that the temperature calibration method comprises at least:
1) acquiring a temperature detection signal and a temperature reference signal at the same ambient temperature;
2) acquiring a temperature value corresponding to the temperature reference signal, and obtaining a linear equation of the voltage value of the temperature detection signal and the environment temperature based on the temperature value, the voltage value of the temperature detection signal and the temperature coefficient of the temperature sensor;
3) and acquiring temperatures corresponding to the temperature detection signals at different temperatures based on the linear equation.
9. The temperature calibration method according to claim 8, wherein: the method comprises the steps of 1) sequentially obtaining a temperature detection signal and a temperature reference signal at the same ambient temperature, and respectively converting the temperature detection signal and the temperature reference signal into digital signals and then storing the digital signals.
10. The temperature calibration method according to claim 8, wherein: the temperature coefficient of the temperature sensor satisfies the following relational expression:
where K is the temperature coefficient, N is the ratio of the current densities acting on the two negative temperature coefficient voltages, M is the amplification factor of the positive temperature coefficient voltage, VTIs the temperature coefficient voltage, T is the temperature.
11. An electronic device, characterized in that the electronic device comprises at least:
a temperature detection device that generates a temperature reference signal based on an ambient temperature;
the temperature sensor according to any one of claims 5 to 7, connected to an output end of the temperature detection device, wherein the temperature detection circuit generates a temperature detection signal based on an ambient temperature, and the temperature calibration circuit calculates a linear equation of an output voltage of the temperature detection circuit and the ambient temperature, and obtains temperatures corresponding to the temperature detection signals at different temperatures based on the linear equation.
12. A chip, characterized in that it comprises at least:
a memory for storing computer execution instructions;
a processor for executing the computer executable instructions to perform the temperature calibration method of any one of claims 8 to 10.
13. The chip of claim 12, wherein: the memory is also used for storing the digital signals of the temperature detection signal and the temperature reference signal.
Priority Applications (2)
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| CN202110353292.7A CN112732002B (en) | 2021-04-01 | 2021-04-01 | Temperature calibration circuit, calibration method, sensor, electronic device and chip |
| PCT/CN2021/132694 WO2022205953A1 (en) | 2021-04-01 | 2021-11-24 | Temperature calibration circuit, temperature calibration method, temperature sensor, electronic device and chip |
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| CN202110353292.7A CN112732002B (en) | 2021-04-01 | 2021-04-01 | Temperature calibration circuit, calibration method, sensor, electronic device and chip |
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| CN112732002B true CN112732002B (en) | 2021-07-16 |
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| CN112732002B (en) * | 2021-04-01 | 2021-07-16 | 上海艾为微电子技术有限公司 | Temperature calibration circuit, calibration method, sensor, electronic device and chip |
| CN114415777A (en) * | 2021-12-30 | 2022-04-29 | 北京无线电计量测试研究所 | Method and circuit for compensating C field current and reducing rubidium clock temperature coefficient |
| CN114636484B (en) * | 2022-05-09 | 2022-08-23 | 深圳市航顺芯片技术研发有限公司 | Digital temperature sensor, chip temperature detection system and chip temperature detection method |
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| CN102081423B (en) * | 2010-12-07 | 2012-06-27 | 上海艾为电子技术有限公司 | Temperature reentrant current limiting apparatus |
| CN102175347B (en) * | 2011-02-15 | 2013-10-30 | 钜泉光电科技(上海)股份有限公司 | Calibration method and calibration system of temperature sensor |
| CN102589734B (en) * | 2012-01-31 | 2013-10-23 | 钜泉光电科技(上海)股份有限公司 | Temperature sensor |
| CN104515611B (en) * | 2013-09-29 | 2019-05-31 | 中兴通讯股份有限公司 | A kind of temperature-sensitive circuit and temperature sensor |
| US20160252409A1 (en) * | 2015-02-27 | 2016-09-01 | Qualcomm, Incorporated | Calibrated temperature sensing system |
| US10228294B2 (en) * | 2016-05-12 | 2019-03-12 | Infineon Technologies Ag | System and method for temperature sensing |
| CN206125581U (en) * | 2016-09-22 | 2017-04-26 | 德州圣祥金属制品有限公司 | Metal welding wire thermoplastic film apparatus for producing |
| CN108007594B (en) * | 2016-10-31 | 2020-05-19 | 深圳市中兴微电子技术有限公司 | Temperature detection circuit and method |
| DE102017104434B3 (en) * | 2017-03-03 | 2018-07-12 | Infineon Technologies Ag | Device and method for determining a temperature or a temperature-dependent value usable for determining the temperature, temperature sensor, pressure sensor and combination sensor |
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| IT201800004496A1 (en) * | 2018-04-13 | 2019-10-13 | SENSOR CIRCUIT, CORRESPONDING SYSTEM AND PROCEDURE | |
| CN208833381U (en) * | 2018-08-08 | 2019-05-07 | 上海艾为电子技术股份有限公司 | A kind of temperature detection sample circuit |
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| CN112113686A (en) * | 2020-09-30 | 2020-12-22 | 山东华科半导体研究院有限公司 | Temperature sensor chip |
| CN112578840B (en) * | 2020-12-09 | 2022-04-19 | 杭州米芯微电子有限公司 | Method, system and storage medium for calibrating reference voltage by using temperature |
| CN112732002B (en) * | 2021-04-01 | 2021-07-16 | 上海艾为微电子技术有限公司 | Temperature calibration circuit, calibration method, sensor, electronic device and chip |
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