CN116183046A - Temperature detection circuit - Google Patents
Temperature detection circuit Download PDFInfo
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- CN116183046A CN116183046A CN202211575512.1A CN202211575512A CN116183046A CN 116183046 A CN116183046 A CN 116183046A CN 202211575512 A CN202211575512 A CN 202211575512A CN 116183046 A CN116183046 A CN 116183046A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
- G01K7/16—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements
Abstract
The invention provides a temperature detection circuit, which belongs to the field of integrated circuits, and comprises: the first field effect transistor, the second field effect transistor, the third field effect transistor, the operational amplifier, the second triode and the first triode; the sources of the first field effect transistor, the second field effect transistor and the third field effect transistor are respectively connected with a direct current power supply; the grid electrodes of the first field effect transistor, the second field effect transistor and the third field effect transistor are respectively connected with the first end of the operational amplifier; the drain electrode of the first field effect transistor, the emitter electrode of the second triode and the second end of the operational amplifier are respectively connected to the first connecting point; the drain electrode of the second field effect transistor, the emitter electrode of the first triode and the third end of the operational amplifier are respectively connected to the second connection point; and the drain electrode of the third field effect transistor is respectively connected with the collector electrodes of the second triode and the first triode and is connected to the grounding end. The invention realizes the performance improvement of temperature detection sensitivity and precision, and simultaneously realizes the simplification of circuit structure, the reduction of area and the reduction of power consumption.
Description
Technical Field
The present disclosure relates to integrated circuit design, and particularly to a temperature detection circuit.
Background
As integrated circuit fabrication process dimensions decrease, power consumption and heat generation are increasingly becoming the limiting factors in deep sub-micron circuits.
A conventional CMOS temperature detector includes a bandgap reference, a temperature sensing circuit and a comparator. The bandgap reference source (Bandgap reference, BGR) is powered by a positive temperature coefficient voltage DeltaV BE And negative temperature coefficient voltage V BE The output voltage is zero temperature-shifted according to different weight coefficient combinations, and the temperature sensing circuit generally adopts triode-proportional-to-absolute-temperature (PTAT) delta V BE Or V inversely proportional to absolute temperature (CTAT) BE 。
The temperature sensing circuit in the prior art has the problems of low temperature sensitivity, poor precision and large area.
Disclosure of Invention
The invention provides a temperature detection circuit which is used for solving the defects of low sensitivity, low precision and large area of a temperature sensing circuit in the prior art.
The invention provides a temperature detection circuit, comprising: the first field effect transistor, the second field effect transistor, the third field effect transistor, the operational amplifier, the second triode and the first triode;
the source electrode of the first field effect tube, the source electrode of the second field effect tube and the source electrode of the third field effect tube are respectively connected with a direct current power supply;
the grid electrode of the first field effect tube, the grid electrode of the second field effect tube and the grid electrode of the third field effect tube are respectively connected with the first end of the operational amplifier;
the drain electrode of the first field effect transistor, the emitter electrode of the second triode and the second end of the operational amplifier are respectively connected to the first connecting point;
the drain electrode of the second field effect transistor, the emitter electrode of the first triode and the third end of the operational amplifier are respectively connected to the second connection point;
the drain electrode of the third field effect transistor is respectively connected with the collector electrode of the second triode and the collector electrode of the first triode and is connected to the grounding end;
the base electrode of the second triode is connected with the base electrode of the first triode and is connected to the grounding end.
In some embodiments, a first resistor is disposed between the second connection point and the emitter of the first transistor.
In some embodiments, a second resistor and a third resistor are arranged between the drain electrode of the third field effect transistor and the ground terminal;
the drain electrode of the third field effect transistor and the first end of the third resistor are respectively connected to a third connection point;
the second end of the third resistor and the first end of the second resistor are respectively connected to a fourth connection point;
the second terminal of the second resistor is connected to the ground terminal.
In some embodiments, a first comparator is also included;
a first end of the first comparator is connected to the third connection point;
the second end of the first comparator is connected to the first connection point;
the third terminal of the first comparator outputs a first comparison signal.
In some embodiments, a second comparator is also included;
the first end of the second comparator is connected to the first connection point;
a second end of the second comparator is connected to the fourth connection point;
the third terminal of the second comparator outputs a second comparison signal.
In some embodiments, a fourth field effect transistor is also included;
the source electrode of the fourth field effect transistor is connected with a direct current power supply;
the grid electrode of the fourth field effect transistor is connected with the first end of the operational amplifier;
and the drain electrode of the fourth field effect transistor is respectively connected with the collector electrode of the second triode and the collector electrode of the first triode and is connected to the grounding end.
In some embodiments, a first resistor is disposed between the second connection point and the emitter of the first transistor.
In some embodiments, a third resistor is disposed between the drain of the third field effect transistor and the ground terminal;
a second resistor is arranged between the drain electrode of the fourth field effect transistor and the grounding end;
the drain electrode of the third field effect transistor and the first end of the third resistor are respectively connected to a third connection point;
the drain electrode of the fourth field effect transistor and the first end of the second resistor are respectively connected to a fifth connection point;
the second end of the second resistor is connected to the ground end;
the second terminal of the third resistor is connected to the ground terminal.
In some embodiments, a first comparator is also included;
a first end of the first comparator is connected to the third connection point;
the second end of the first comparator is connected to the first connection point;
the third terminal of the first comparator outputs a first comparison signal.
In some embodiments, a second comparator is also included;
the first end of the second comparator is connected to the first connection point;
a second end of the second comparator is connected to the fifth connection point;
the third terminal of the second comparator outputs a second comparison signal.
The temperature detection circuit provided by the invention simplifies the structure of the temperature detection circuit, combines the BGR circuit and the temperature sensing circuit into the same circuit, realizes the detection sensitivity and precision performance optimization, and reduces the circuit area and the power consumption.
Drawings
In order to more clearly illustrate the invention or the technical solutions of the prior art, the following description will briefly explain the drawings used in the embodiments or the description of the prior art, and it is obvious that the drawings in the following description are some embodiments of the invention, and other drawings can be obtained according to the drawings without inventive effort for a person skilled in the art.
FIG. 1 is a block diagram of a conventional CMOS temperature detector;
FIG. 2 is a schematic diagram of an exemplary PTAT sensing circuit;
FIG. 3 is a typical CTAT sensing circuit diagram;
FIG. 4 is a schematic circuit diagram of a temperature detection circuit according to the present invention;
FIG. 5 shows the temperature-sensing voltage V BE2 、V PTATL And V PTATH Schematic diagram of temperature change curve and temperature detection threshold;
FIG. 6 is a second schematic circuit diagram of the temperature detecting circuit according to the present invention;
FIG. 7 is a third schematic circuit diagram of the temperature detecting circuit according to the present invention;
FIG. 8 is a schematic diagram of a temperature detection circuit according to the present invention.
Detailed Description
Fig. 1 is a block diagram of a conventional CMOS temperature detector including a bandgap reference source, a temperature sensing circuit and a comparator. The bandgap reference source (Bandgap reference, BGR) is powered by a positive temperature coefficient voltage DeltaV BE And negative temperature coefficient voltage V BE The output voltage with zero temperature drift is realized according to different weight coefficient combinations.
FIG. 2 is a schematic diagram of a typical PTAT temperature sensing circuit, ΔV, if employed BE The positive temperature coefficient is small, and R needs to be improved to obtain larger temperature sensitivity 3 /R 1 The ratio of the voltage to the current is increased, and errors caused by offset of an operational amplifier and mismatching of a current mirror are amplified, so that the VPTAT variation range is large, the temperature sensing precision is reduced, and if offset and noise influence is reduced by introducing a chopping technology, the circuit complexity is increased, and the area and the power consumption are sacrificed.
FIG. 3 is a schematic diagram of a typical CTAT sensing circuit, V if used BE Is affected by the process, and the different process angles (corners) are different, so that V is caused BE The wave-motion is carried out,and the temperature detection threshold point is inaccurate. And the negative temperature coefficient is fixed at about-1.5 mV/DEG C, which cannot be regulated and cannot be increased.
Based on the technical problems, the embodiment of the application provides a temperature detection circuit, which simplifies the structure of the temperature detection circuit, combines a BGR circuit and a temperature sensing circuit into the same circuit, realizes the optimization of detection sensitivity and precision performance, and reduces the circuit area and the power consumption.
For the purpose of making the objects, technical solutions and advantages of the present invention more apparent, the technical solutions of the present invention will be clearly and completely described below with reference to the accompanying drawings, and it is apparent that the described embodiments are some embodiments of the present invention, not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
Fig. 4 is a schematic circuit diagram of a temperature detection circuit provided by the present invention, as shown in fig. 4, the temperature detection circuit includes a first field effect transistor, a second field effect transistor, a third field effect transistor, an operational amplifier, a second triode and a first triode;
the source electrode of the first field effect tube, the source electrode of the second field effect tube and the source electrode of the third field effect tube are respectively connected with a direct current power supply;
the grid electrode of the first field effect tube, the grid electrode of the second field effect tube and the grid electrode of the third field effect tube are respectively connected with the first end of the operational amplifier;
the drain electrode of the first field effect transistor, the emitter electrode of the second triode and the second end of the operational amplifier are respectively connected to the first connecting point;
the drain electrode of the second field effect transistor, the emitter electrode of the first triode and the third end of the operational amplifier are respectively connected to the second connection point;
the drain electrode of the third field effect transistor is respectively connected with the collector electrode of the second triode and the collector electrode of the first triode and is connected to the grounding end;
the base electrode of the second triode is connected with the base electrode of the first triode and is connected to the grounding end.
Specifically, the temperature detection circuit provided by the embodiment of the invention comprises a first field effect transistor, a second field effect transistor, a third field effect transistor, an operational amplifier, a second triode and a first triode.
A field effect transistor is a semiconductor device that uses the electric field effect of a control input loop to control the output loop current.
The op-amp constitutes a negative feedback loop forcing its inputs to be at equal positive and negative potentials.
The PMOS tube can be in a common-source and common-gate structure so as to improve the power supply rejection ratio of the temperature detection circuit.
Specifically, transistor Q is formed by a process technology 1 Is of the area Q 2 N times, e.g. triode Q 1 Is of the area Q 2 8 or 16 times for generating DeltaV BE 。
The temperature detection circuit provided by the invention simplifies the structure of the temperature detection circuit, combines the BGR circuit and the temperature sensing circuit into the same circuit, realizes the detection sensitivity and precision performance optimization, and reduces the circuit area and the power consumption.
In some embodiments, a first resistor is disposed between the second connection point and the emitter of the first transistor.
Specifically, R is as shown in FIG. 4 1 The resistor is a first resistor for passing through transistors Q of different areas 1 /Q 2 And R is 1 The operational amplifier and the current mirror generate a negative temperature coefficient voltage V BE2 And positive temperature coefficient current I 1 Wherein, because the PMOS tubes have the same size, the current flowing is the same, i.e 0 ＝I 1 ＝I 2 。
The temperature detection circuit provided by the invention simplifies the structure of the temperature detection circuit, combines the BGR circuit and the temperature sensing circuit into the same circuit, realizes the detection sensitivity and precision performance optimization, and reduces the circuit area and the power consumption.
In some embodiments, a second resistor and a third resistor are arranged between the drain electrode of the third field effect transistor and the ground terminal;
the drain electrode of the third field effect transistor and the first end of the third resistor are respectively connected to a third connection point;
the second end of the third resistor and the first end of the second resistor are respectively connected to a fourth connection point;
the second terminal of the second resistor is connected to the ground terminal.
Specifically, R 2 、R 3 The adjustable resistor can be designed, and the accuracy of the temperature measuring point of the current sheet circuit is further realized through the trimming resistor.
Specifically, the calculation formula of the voltage at one end of the positive temperature coefficient of the high temperature detection comparator in the temperature detection circuit is as follows:
wherein V is PTATH Is the voltage at one end of positive temperature coefficient of the high-temperature detection comparator, R 1 Is a first resistance, R 2 Is a second resistor, V BE2 Is Q 2 Emitter voltage, V BE2 For characterising negative temperature coefficient characteristics, V BE1 Is Q 1 Emitter voltage, V BE1 For characterising positive temperature coefficient characteristics, V T Is the voltage equivalent of temperature, the value is kT/q, wherein k is Boltzmann constant, T is thermodynamic temperature, q is electron charge, and V is at normal temperature T Equal to 0.026V, ln is a natural logarithmic function, n is Q 1 And Q 2 Is a ratio of the areas of (3).
By adjusting R 2 Realizing V at threshold temperature point BE2 Equal to V PTATH 。
Specifically, the voltage at one end of the positive temperature coefficient of the low temperature detection comparator in the temperature detection circuit of the invention has the following calculation formula:
wherein V is PTATL Is the positive temperature of the low-temperature detection comparatorVoltage at coefficient one end, R 1 Is a first resistance, R 2 Is a second resistor, R 3 Is a third resistor, V BE2 Is Q 2 Emitter voltage, V BE2 For characterising negative temperature coefficient characteristics, V BE1 Is Q 1 Emitter voltage, V BE1 For characterising positive temperature coefficient characteristics, V T Is the voltage equivalent of temperature, the value is kT/q, wherein k is Boltzmann constant, T is thermodynamic temperature, q is electron charge, and V is at normal temperature T Equal to 0.026V, ln is a natural logarithmic function, n is Q 1 And Q 2 Is a ratio of the areas of (3).
By adjusting R 3 Realizing V at threshold temperature point BE2 Equal to V PTATL 。
Specifically, positive temperature coefficient V PTATH By adjusting Q 2 N and V, a multiple of (2) PTATH The resistance value of the branch is realized.
Specifically, a positive temperature coefficient current I is obtained by a current mirror 2 Calculating resistance R according to the high temperature threshold and the low temperature threshold of temperature detection 2 And R is 3 Is obtained by the value of V PTATH And V PTATL 。
Specifically, under the condition of not introducing an additional circuit, the positive temperature coefficient voltage and the negative temperature coefficient voltage are simultaneously utilized to make difference, and the BGR circuit and the temperature sensing circuit are combined into the same circuit to respectively generate the positive temperature coefficient voltage V corresponding to the high temperature threshold point PTATH Positive temperature coefficient voltage V corresponding to low temperature threshold point PTATL Then the positive temperature coefficient voltage V PTATH And positive temperature coefficient voltage V PTATL Respectively with negative temperature coefficient V BE And performing difference making through a comparator to obtain a high-temperature and low-temperature early warning digital output signal of the temperature detector.
The temperature detection circuit provided by the invention simplifies the structure of the temperature detection circuit, combines the BGR circuit and the temperature sensing circuit into the same circuit, realizes the detection sensitivity and precision performance optimization, and reduces the circuit area and the power consumption.
In some embodiments, a first comparator is included;
a first end of the first comparator is connected to the third connection point;
the second end of the first comparator is connected to the first connection point;
the third terminal of the first comparator outputs a first comparison signal.
Specifically, the two inputs of the comparator are analog signals, the output is a binary signal, and when the difference of the input voltages increases or decreases, the output thereof remains constant. From this point of view, the comparator can also be considered a 1-bit analog-to-digital converter (ADC).
Specifically, the positive temperature coefficient voltage V corresponding to the low temperature threshold point PTATL And V BE2 And comparing the low-temperature early warning output signals by the first comparator.
FIG. 5 shows the temperature sensing voltage V BE2 、V PTATL And V PTATH A temperature-dependent curve and a temperature detection threshold diagram, wherein the solid line is the center process angle (tt counter) and the dotted line is the upper right corner process angle (ff counter), as shown in fig. 4 and 5, at V BE2 In the case of the negative terminal of the high temperature detection hysteresis comparator and the positive terminal of the low temperature detection hysteresis comparator, V is generated when the ambient temperature is lower than the low temperature detection threshold temperature BE2 Greater than V PTATL The low temperature alarm output signal TDLO outputs high level to generate alarm, when the ambient temperature is higher than the low temperature detection threshold temperature, V BE2 Less than V PTATL The low-temperature alarm output signal TDLO outputs a low level and does not alarm.
On the contrary, FIG. 6 is a second schematic diagram of the temperature detection circuit according to the present invention, as shown in FIGS. 5 and 6, at V BE2 In the case of the positive terminal as the high temperature detection hysteresis comparator and the negative terminal as the low temperature detection hysteresis comparator, since V is generated when the ambient temperature is lower than the low temperature detection threshold temperature BE2 Greater than V PTATL The low-temperature alarm output signal TDLO outputs low level to generate alarm, and when the ambient temperature is higher than the low-temperature detection threshold temperature, V BE2 Less than V PTATL The low-temperature alarm output signal TDLO outputs a high level and does not alarm.
The temperature detection circuit provided by the invention simplifies the structure of the temperature detection circuit, combines the BGR circuit and the temperature sensing circuit into the same circuit, realizes the detection sensitivity and precision performance optimization, and reduces the circuit area and the power consumption.
On the other hand, as shown in FIG. 5, the high temperature threshold voltage point V PTATH And a low temperature threshold voltage point V PTATL And DeltaV BE Proportional, negative temperature coefficient V BE And DeltaV BE The trend of the change along with the process angle is consistent, so that V is changed along with the process BE And V PTATL /V PTATH The temperature detection threshold value change caused by process change is greatly weakened, and the detection precision is further improved.
In some embodiments, a second comparator is also included;
the first end of the second comparator is connected to the first connection point;
a second end of the second comparator is connected to the fourth connection point;
the third terminal of the second comparator outputs a second comparison signal.
Specifically, the positive temperature coefficient voltage V corresponding to the high temperature threshold point PTATH And V BE2 And comparing the signals through a second comparator so as to obtain a high-temperature early warning output signal.
As shown in fig. 4 and 5, at V BE2 In the case of the negative terminal of the high temperature detection hysteresis comparator and the positive terminal of the low temperature detection hysteresis comparator, V is as follows when the ambient temperature is higher than the high temperature detection threshold temperature BE2 Less than V PTATH The high temperature alarm output signal TDHO outputs high level to generate alarm, when the ambient temperature is lower than the high temperature detection threshold temperature, V BE2 Greater than V PTATH The high temperature alarm output signal TDHO outputs a low level and does not alarm.
In contrast, as shown in FIGS. 5 and 6, at V BE2 In the case of the positive terminal of the high temperature detection hysteresis comparator and the negative terminal of the low temperature detection hysteresis comparator, V is as follows when the ambient temperature is higher than the high temperature detection threshold temperature BE2 Less than V PTATH The high temperature alarm output signal TDHO outputs a low level to generate an alarm, and when the ambient temperature is lower than the high temperature detection threshold temperature, V BE2 Greater than V PTATH The high-temperature alarm output signal TDHO outputs a high level and does not alarm.
The temperature detection circuit provided by the invention simplifies the structure of the temperature detection circuit, combines the BGR circuit and the temperature sensing circuit into the same circuit, realizes the detection sensitivity and precision performance optimization, and reduces the circuit area and the power consumption.
On the other hand, as shown in FIG. 5, the high temperature threshold voltage point V PTATH And a low temperature threshold voltage point V PTATL And DeltaV BE Proportional, negative temperature coefficient V BE And DeltaV BE The trend of the change along with the process angle is consistent, so that V is changed along with the process BE And V PTATL /V PTATH The temperature detection threshold value change caused by process change is greatly weakened, and the detection precision is further improved. FIG. 7 is a third schematic circuit diagram of the temperature detection circuit according to the present invention, as shown in FIG. 7, and further including a fourth FET;
the source electrode of the fourth field effect transistor is connected with a direct current power supply;
the grid electrode of the fourth field effect transistor is connected with the first end of the operational amplifier;
and the drain electrode of the fourth field effect transistor is respectively connected with the collector electrode of the second triode and the collector electrode of the first triode and is connected to the grounding end.
Specifically, the temperature detection circuit provided by the embodiment of the invention comprises a first field effect transistor, a second field effect transistor, a third field effect transistor, a fourth field effect transistor, an operational amplifier, a second triode and a first triode.
A field effect transistor is a semiconductor device that uses the electric field effect of a control input loop to control the output loop current.
The op-amp constitutes a negative feedback loop forcing its inputs to be at equal positive and negative potentials.
The PMOS tube can be in a common-source and common-gate structure so as to improve the power supply rejection ratio of the temperature detection circuit.
Specifically, transistor Q is formed by a process technology 1 Is of the area Q 2 N times, e.g. triode Q 1 Is of the area Q 2 8 or 16 times for generating DeltaV BE 。
The temperature detection circuit provided by the invention simplifies the structure of the temperature detection circuit, combines the BGR circuit and the temperature sensing circuit into the same circuit, realizes the detection sensitivity and precision performance optimization, and reduces the circuit area and the power consumption.
In some embodiments, a first resistor is disposed between the second connection point and the emitter of the first transistor.
Specifically, the resistor shown in FIG. 7 is a first resistor for passing through transistors Q of different areas 1 /Q 2 And R is 1 The operational amplifier and the current mirror generate a negative temperature coefficient voltage V BE2 And positive temperature coefficient current I 1 Wherein, because the PMOS tubes have the same size, the current flowing is the same, i.e 0 ＝I 1 ＝I 2 ＝I 3 。
The temperature detection circuit provided by the invention simplifies the structure of the temperature detection circuit, combines the BGR circuit and the temperature sensing circuit into the same circuit, realizes the detection sensitivity and precision performance optimization, and reduces the circuit area and the power consumption.
In some embodiments, a third resistor is disposed between the drain of the third field effect transistor and the ground terminal;
a second resistor is arranged between the drain electrode of the fourth field effect transistor and the grounding end;
the drain electrode of the third field effect transistor and the first end of the third resistor are respectively connected to a third connection point;
the drain electrode of the fourth field effect transistor and the first end of the second resistor are respectively connected to a fifth connection point;
the second end of the second resistor is connected to the ground end;
the second terminal of the third resistor is connected to the ground terminal.
Specifically, R 2 、R 3 The adjustable resistor can be designed, and the accuracy of the temperature measuring point of the current sheet circuit is further realized through the trimming resistor.
Specifically, alternatively, the voltage calculation formula at the positive temperature coefficient end of the high temperature detection comparator in the temperature detection circuit of the present invention is as follows:
wherein V is PTATH Is the voltage at one end of positive temperature coefficient of the high-temperature detection comparator, R 1 Is a first resistance, R 2 Is a second resistor, V BE2 Is Q 2 Emitter voltage, V BE2 For characterizing negative temperature coefficient characteristics; v (V) BE1 Is Q 1 Emitter voltage, V BE1 For characterising positive temperature coefficient characteristics, V T Is the voltage equivalent of temperature, the value is kT/q, wherein k is Boltzmann constant, T is thermodynamic temperature, q is electron charge, and V is at normal temperature T Equal to 0.026V, ln is a natural logarithmic function, n is Q 1 And Q 2 Is a ratio of the areas of (3).
By adjusting R 2 Realizing V at threshold temperature point BE2 Equal to V PTATH 。
Specifically, the voltage at one end of the positive temperature coefficient of the low temperature detection comparator in the temperature detection circuit of the invention has the following calculation formula:
wherein V is PTATH Is the voltage at one end of positive temperature coefficient of the low-temperature detection comparator, R 1 Is a first resistance, R 2 Is a second resistor, R 3 Is a third resistor, V BE2 Is Q 2 Emitter voltage, V BE2 For characterising negative temperature coefficient characteristics, V BE1 Is Q 1 Emitter voltage, V BE1 For characterising positiveTemperature coefficient characteristics, V T Is the voltage equivalent of temperature, the value is kT/q, wherein k is Boltzmann constant, T is thermodynamic temperature, q is electron charge, and V is at normal temperature T Equal to 0.026V, ln is a natural logarithmic function, n is Q 1 And Q 2 Is a ratio of the areas of (3).
By adjusting R 3 Realizing V at threshold temperature point BE2 Equal to V PTATL 。
Specifically, positive temperature coefficient V PTATH By adjusting Q 2 N and V, a multiple of (2) PTATH The resistance value of the branch is realized.
Specifically, the temperature coefficient current can be divided into two branches to obtain V PTATH And V PTATL 。
Specifically, under the condition of not introducing an additional circuit, the positive temperature coefficient voltage and the negative temperature coefficient voltage are simultaneously utilized to make difference, and the BGR circuit and the temperature sensing circuit are combined into the same circuit to respectively generate the positive temperature coefficient voltage V corresponding to the high temperature threshold point PTATH Positive temperature coefficient voltage V corresponding to low temperature threshold point PTATL Then the positive temperature coefficient voltage V PTATH And positive temperature coefficient voltage V PTATL Respectively with negative temperature coefficient V BE And performing difference making through a comparator to obtain a high-temperature and low-temperature early warning digital output signal of the temperature detector.
The temperature detection circuit provided by the invention simplifies the structure of the temperature detection circuit, combines the BGR circuit and the temperature sensing circuit into the same circuit, realizes the detection sensitivity and precision performance optimization, and reduces the circuit area and the power consumption.
In some embodiments, a first comparator is also included;
a first end of the first comparator is connected to the third connection point;
the second end of the first comparator is connected to the first connection point;
the third terminal of the first comparator outputs a first comparison signal.
Specifically, the two inputs of the comparator are analog signals, the output is a binary signal, and when the difference of the input voltages increases or decreases, the output thereof remains constant. From this point of view, the comparator can also be considered a 1-bit analog-to-digital converter (ADC).
Specifically, the positive temperature coefficient voltage V corresponding to the low temperature threshold point PTATL And V BE2 And comparing the low-temperature early warning output signals by the first comparator.
FIG. 5 shows the temperature sensing voltage V BE2 、V PTATL And V PTATH A temperature-dependent curve and a temperature detection threshold diagram, wherein the solid line is the center process angle (tt counter) and the dotted line is the upper right corner process angle (ff counter), as shown in fig. 7 and 5, at V BE2 In the case of the negative terminal of the high temperature detection hysteresis comparator and the positive terminal of the low temperature detection hysteresis comparator, V is generated when the ambient temperature is lower than the low temperature detection threshold temperature BE2 Greater than V PTATL The low temperature alarm output signal TDLO outputs high level to generate alarm, when the ambient temperature is higher than the low temperature detection threshold temperature, V BE2 Less than V PTATL The low-temperature alarm output signal TDLO outputs a low level and does not alarm.
On the contrary, FIG. 8 is a schematic diagram of a temperature detection circuit according to the present invention, as shown in FIGS. 5 and 8, at V BE2 In the case of the positive terminal as the high temperature detection hysteresis comparator and the negative terminal as the low temperature detection hysteresis comparator, since V is generated when the ambient temperature is lower than the low temperature detection threshold temperature BE2 Greater than V PTATL The low-temperature alarm output signal TDLO outputs low level to generate alarm, and when the ambient temperature is higher than the low-temperature detection threshold temperature, V BE2 Less than V PTATL The low-temperature alarm output signal TDLO outputs a high level and does not alarm. The temperature detection circuit provided by the invention simplifies the structure of the temperature detection circuit, combines the BGR circuit and the temperature sensing circuit into the same circuit, realizes the detection sensitivity and precision performance optimization, and reduces the circuit area and the power consumption.
On the other hand, as shown in FIG. 5, the high temperature threshold voltage point V PTATH And a low temperature threshold voltage point V PTATL And DeltaV BE Proportional, negative temperature coefficient V BE And DeltaV BE Following processThe angular variation trend is consistent, which makes V with process variation BE And V PTATL /V PTATH The temperature detection threshold value change caused by process change is greatly weakened, and the detection precision is further improved.
In some embodiments, a second comparator is also included;
the first end of the second comparator is connected to the first connection point;
a second end of the second comparator is connected to the fourth connection point;
the third terminal of the second comparator outputs a second comparison signal.
Specifically, the positive temperature coefficient voltage V corresponding to the high temperature threshold point PTATH And V BE2 And comparing the signals through a second comparator so as to obtain a high-temperature early warning output signal.
As shown in fig. 7 and 5, at V BE2 In the case of the negative terminal of the high temperature detection hysteresis comparator and the positive terminal of the low temperature detection hysteresis comparator, V is as follows when the ambient temperature is higher than the high temperature detection threshold temperature BE2 Less than V PTATH The high temperature alarm output signal TDHO outputs high level to generate alarm, when the ambient temperature is lower than the high temperature detection threshold temperature, V BE2 Greater than V PTATH The high temperature alarm output signal TDHO outputs a low level and does not alarm.
In contrast, as shown in FIGS. 5 and 8, at V BE2 In the case of the positive terminal of the high temperature detection hysteresis comparator and the negative terminal of the low temperature detection hysteresis comparator, V is as follows when the ambient temperature is higher than the high temperature detection threshold temperature BE2 Less than V PTATH The high temperature alarm output signal TDHO outputs a low level to generate an alarm, and when the ambient temperature is lower than the high temperature detection threshold temperature, V BE2 Greater than V PTATH The high-temperature alarm output signal TDHO outputs a high level and does not alarm.
The temperature detection circuit provided by the invention simplifies the structure of the temperature detection circuit, combines the BGR circuit and the temperature sensing circuit into the same circuit, realizes the detection sensitivity and precision performance optimization, and reduces the circuit area and the power consumption.
On the other hand, as shown in FIG. 5, the high temperature threshold voltage point V PTATH And a low temperature threshold voltage point V PTATL And DeltaV BE Proportional, negative temperature coefficient V BE And DeltaV BE The trend of the change along with the process angle is consistent, so that V is changed along with the process BE And V PTATL /V PTATH The temperature detection threshold value change caused by process change is greatly weakened, and the detection precision is further improved. Finally, it should be noted that: the above embodiments are only for illustrating the technical solution of the present invention, and are not limiting; although the invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical scheme described in the foregoing embodiments can be modified or some technical features thereof can be replaced by equivalents; such modifications and substitutions do not depart from the spirit and scope of the technical solutions of the embodiments of the present invention.
Claims (10)
1. A temperature detection circuit, comprising:
the first field effect transistor, the second field effect transistor, the third field effect transistor, the operational amplifier, the second triode and the first triode;
the source electrode of the first field effect tube, the source electrode of the second field effect tube and the source electrode of the third field effect tube are respectively connected with a direct current power supply;
the grid electrode of the first field effect tube, the grid electrode of the second field effect tube and the grid electrode of the third field effect tube are respectively connected with the first end of the operational amplifier;
the drain electrode of the first field effect transistor, the emitter electrode of the second triode and the second end of the operational amplifier are respectively connected to the first connecting point;
the drain electrode of the second field effect transistor, the emitter electrode of the first triode and the third end of the operational amplifier are respectively connected to the second connection point;
the drain electrode of the third field effect transistor is respectively connected with the collector electrode of the second triode and the collector electrode of the first triode and is connected to the grounding end;
the base electrode of the second triode is connected with the base electrode of the first triode and is connected to the grounding end.
2. The temperature sensing circuit of claim 1, wherein a first resistor is provided between the second connection point and the emitter of the first transistor.
3. The temperature detection circuit of claim 1, wherein a second resistor and a third resistor are disposed between the drain of the third field effect transistor and the ground terminal;
the drain electrode of the third field effect transistor and the first end of the third resistor are respectively connected to a third connection point;
the second end of the third resistor and the first end of the second resistor are respectively connected to a fourth connection point;
the second terminal of the second resistor is connected to the ground terminal.
4. The temperature detection circuit of claim 3, further comprising a first comparator;
a first end of the first comparator is connected to the third connection point;
the second end of the first comparator is connected to the first connection point;
the third terminal of the first comparator outputs a first comparison signal.
5. A temperature detection circuit according to claim 3, further comprising a second comparator;
the first end of the second comparator is connected to the first connection point;
a second end of the second comparator is connected to the fourth connection point;
the third terminal of the second comparator outputs a second comparison signal.
6. The temperature detection circuit of claim 1, further comprising a fourth field effect transistor;
the source electrode of the fourth field effect transistor is connected with a direct current power supply;
the grid electrode of the fourth field effect transistor is connected with the first end of the operational amplifier;
and the drain electrode of the fourth field effect transistor is respectively connected with the collector electrode of the second triode and the collector electrode of the first triode and is connected to the grounding end.
7. The temperature sensing circuit of claim 6, wherein a first resistor is provided between the second connection point and the emitter of the first transistor.
8. The temperature detection circuit of claim 6, wherein a third resistor is disposed between the drain of the third fet and the ground terminal;
a second resistor is arranged between the drain electrode of the fourth field effect transistor and the grounding end;
the drain electrode of the third field effect transistor and the first end of the third resistor are respectively connected to a third connection point;
the drain electrode of the fourth field effect transistor and the first end of the second resistor are respectively connected to a fifth connection point;
the second end of the second resistor is connected to the ground end;
the second terminal of the third resistor is connected to the ground terminal.
9. The temperature detection circuit of claim 8, further comprising a first comparator;
a first end of the first comparator is connected to the third connection point;
the second end of the first comparator is connected to the first connection point;
the third terminal of the first comparator outputs a first comparison signal.
10. The temperature detection circuit of claim 8, further comprising a second comparator;
the first end of the second comparator is connected to the first connection point;
a second end of the second comparator is connected to the fifth connection point;
the third terminal of the second comparator outputs a second comparison signal.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211575512.1A CN116183046A (en) | 2022-12-08 | 2022-12-08 | Temperature detection circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211575512.1A CN116183046A (en) | 2022-12-08 | 2022-12-08 | Temperature detection circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN116183046A true CN116183046A (en) | 2023-05-30 |
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ID=86437374
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202211575512.1A Pending CN116183046A (en) | 2022-12-08 | 2022-12-08 | Temperature detection circuit |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN116183046A (en) |
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2022
- 2022-12-08 CN CN202211575512.1A patent/CN116183046A/en active Pending
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