CN112731092A - Test system of organic thin film transistor - Google Patents
Test system of organic thin film transistor Download PDFInfo
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- CN112731092A CN112731092A CN202011468449.2A CN202011468449A CN112731092A CN 112731092 A CN112731092 A CN 112731092A CN 202011468449 A CN202011468449 A CN 202011468449A CN 112731092 A CN112731092 A CN 112731092A
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- thin film
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- film transistor
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- 239000010409 thin film Substances 0.000 title claims abstract description 79
- 238000012360 testing method Methods 0.000 title claims abstract description 62
- 230000003068 static effect Effects 0.000 claims abstract description 16
- 230000002457 bidirectional effect Effects 0.000 claims description 5
- 238000005286 illumination Methods 0.000 claims description 3
- 238000010586 diagram Methods 0.000 description 5
- 229910052724 xenon Inorganic materials 0.000 description 4
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 4
- 238000000034 method Methods 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 238000010276 construction Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2607—Circuits therefor
- G01R31/2632—Circuits therefor for testing diodes
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2601—Apparatus or methods therefor
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2607—Circuits therefor
- G01R31/2632—Circuits therefor for testing diodes
- G01R31/2633—Circuits therefor for testing diodes for measuring switching properties thereof
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Thin Film Transistor (AREA)
- Testing Of Individual Semiconductor Devices (AREA)
Abstract
The invention discloses a test system of an organic thin film transistor, which comprises the following components: the device comprises a function signal generator, a current amplifier, an oscilloscope, a direct current power supply, a light source system, a test interface and an organic thin film transistor unit. The invention provides a system for testing static output characteristics, switching characteristics and photoelectric characteristics of an organic thin film transistor, which comprises the following components: the light source system irradiates the organic thin film transistor, a grid electrode, a drain electrode and a source electrode of the organic thin film transistor are respectively connected with the direct current power supply, the function signal generator and the current amplifier through the test interface, and the oscilloscope is connected with the current amplifier and is responsible for displaying the output characteristic of the organic thin film transistor. The above devices are connected in common. The testing system can quickly, accurately and visually test the static output characteristic, the switching characteristic and the photoelectric characteristic of the organic thin film transistor.
Description
The technical field is as follows:
the invention relates to the technical field of organic thin film transistors, in particular to a test system of an organic thin film transistor.
Background art:
with the rapid development of organic materials, the preparation and application of organic thin film transistors are more and more extensive, and it is necessary to test static output characteristics, switching characteristics and photoelectric characteristics in the early stage after the preparation of the organic thin film transistors, which is helpful to improve the preparation method of the organic thin film transistors.
At present, the organic thin film transistor gradually tends to be added with a test of the influence of light on the performance of the organic thin film transistor in the test process, but in daily light, the wavelength of light cannot be separated, so that the influence of factors such as the wavelength and the intensity of light on the performance of the organic thin film transistor cannot be analyzed. Therefore, the existing test system for organic thin film transistors has limitations.
The invention content is as follows:
in view of the above problems, the present invention provides a system for testing static output characteristics, switching characteristics and photoelectric characteristics of an organic thin film transistor.
The above object is achieved by the following technical act: a test system for organic thin film transistors, comprising: the device comprises a function signal generator, a current amplifier, an oscilloscope, a direct current power supply, a light source system, a test interface and an organic thin film transistor unit. The invention provides a system for testing static output characteristics, switching characteristics and photoelectric characteristics of an organic thin film transistor, which comprises the following components: the light source system irradiates an organic thin film transistor, a grid electrode, a drain electrode and a source electrode of the organic thin film transistor are respectively connected with the direct current power supply, the function signal generator and the current amplifier through test interfaces, the oscilloscope is connected with the current amplifier and is responsible for displaying the output characteristic of the organic thin film transistor, and the devices are connected in a common ground mode. The testing system can quickly, accurately and visually test the static output characteristic, the switching characteristic and the photoelectric characteristic of the organic thin film transistor.
When the light source system carries out photoelectric test on the organic thin film transistor unit, the light source system adopts a 130LP-Xe type wavelength-adjustable monochromatic light source system; when the organic thin film transistor unit is tested for the switching characteristic under dynamic illumination, the light source system adopts a frequency-adjustable stroboscopic light source.
The test interface comprises three groups of bidirectional wiring ports of G (grid) S (source) D (drain).
The organic thin film transistor unit includes: organic thin film diodes, organic thin film transistors.
The function signal generator adopts a Tektronix AFG3021B type function signal generator.
The current amplifier adopts a KEITHLEY 428 type current amplifier.
The oscilloscope adopts a Tektronix TDS3054C type oscilloscope.
The direct current power supply adopts a Germany technology (Agilent) E3633A series direct current power supply.
Has the advantages that:
the test system has the advantages of convenient construction process, good repeatability and high practical value.
The testing system can independently test the static output characteristic of the organic thin film transistor, can also directly test the photoelectric characteristic and the switching characteristic of the organic thin film transistor, and provides a good idea for realizing a multivariable parallel concurrent testing system.
Description of the drawings:
the above and other features and advantages of the present invention will become more apparent by describing in detail exemplary embodiments thereof with reference to the attached drawings, in which:
FIG. 1 is a schematic diagram of a testing system for organic thin film transistors.
Fig. 2 is an equivalent circuit of a test system for static output characteristics of an organic thin film diode.
Fig. 3 is an equivalent circuit of a test system of static output characteristics of an organic thin film transistor.
FIG. 4 is an equivalent circuit of a photoelectric characteristic and switching characteristic test system of an organic thin film transistor
The specific implementation mode of the invention is as follows:
the present embodiment is described below with reference to the accompanying drawings, and fig. 1 is a schematic structural diagram of an organic thin film transistor testing system according to the present invention, which includes: the device comprises a light source system, a transistor unit, a test interface, a function signal generator, a direct current voltage source, a current amplifier and an oscilloscope; the function signal generator is connected with a G (grid) end of the test interface; the direct-current voltage source is connected with the D (drain) end of the test interface; the input end of the current amplifier is connected with the S (source) end of the test interface, and the output end of the current amplifier is connected with the oscilloscope; the above devices are connected in common.
Fig. 2 is a diagram showing an equivalent circuit of a testing diode of the testing system of the organic thin film transistor according to the present embodiment; according to the testing system of the organic thin film transistor, the static output characteristic of the organic thin film diode can be tested, when the static output characteristic of the organic thin film diode is tested, the anode of the organic thin film diode is connected to the function generator to provide input voltage for the organic thin film diode, the voltage signal is from 0V to 3V, the step length is 0.2V, the waveform is square wave, the cathode of the organic thin film diode is connected to the current amplifier and forms a loop with the organic thin film diode, the tested output current is amplified by the current amplifier and read out on an oscilloscope, and the static output characteristic testing circuit of the organic thin film diode is completed.
Fig. 3 is an equivalent circuit diagram of a testing transistor of the testing system of an organic thin film transistor according to the present invention; when the static output characteristic of the organic thin film transistor is tested, the drain electrode of the organic thin film transistor is connected to the function signal generator through the bidirectional test interface to provide input voltage for the organic thin film transistor, the voltage signal is from 0V to 3V, the step length is 0.2V, the waveform is square wave, the grid electrode of the organic thin film transistor is connected to the direct current power supply through the bidirectional test interface, and the source electrode of the organic thin film transistor is connected to the current amplifier and the oscilloscope through the bidirectional test interface to jointly form a loop and be grounded.
The organic thin film transistor is conducted by applying a voltage higher than the threshold value of the organic thin film transistor to the gate electrode of the organic thin film transistor using the direct current power supply. And connecting the drain electrode of the organic thin film transistor to the function signal generator, and connecting the source electrode to a current amplifier so as to test the current flowing through the source electrode and the drain electrode. And amplifying the tested output current through a current amplifier, and reading the output current on an oscilloscope to finish the test of the static output characteristic of the organic thin film transistor.
When the organic thin film transistor unit is subjected to photoelectric test, the light source system is a 130LP-Xe type wavelength-tunable monochromatic light source system; the use method of the light source system comprises the following steps of firstly, igniting a xenon lamp, turning on an air cooler, starting a power supply, adjusting the xenon lamp through a power supply panel, setting the actual use power of the xenon lamp to be 350W in an experiment, setting the lighting current of the xenon lamp to be 7.5A, adjusting the wavelength of light, firstly initializing the instrument, scanning at full wavelength, setting the initial wavelength of the instrument to be '2000A', setting the end wavelength to be '7000A', then starting forward scanning, starting the machine to work, changing the wavelength of the light wave emitted by a light outlet of a monochromator of the instrument from 2000A to 7000A until finishing, selecting the wavelength of the light after the initialization, starting a forward scanning spectrum, and adjusting the light outlet after the scanning is finished, and adjusting the width of the inlet and the outlet to be 1mm, and completing the test of the photoelectric characteristic of the organic thin film transistor.
Fig. 4 is a diagram showing an equivalent circuit of a transistor in a switching circuit under the test of stroboscopic illumination by the organic thin film transistor test system according to the present embodiment; connecting the electrode of the organic thin film transistor with the test circuit system, then placing the organic thin film transistor in a sample chamber of the light source outlet, aligning the organic thin film transistor to the light outlet, starting the frequency-adjustable stroboscopic light source, emitting stroboscopic light from one side of the source electrode of the organic thin film transistor, and testing the switching characteristic of the organic thin film transistor by adjusting the frequency of the stroboscopic light source.
The above description is only an embodiment of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art should cover the scope of the present invention by partial modification or replacement within the technical scope of the present invention.
Claims (4)
1. A test system for organic thin film transistors, comprising: the device comprises a function signal generator, a current amplifier, an oscilloscope, a direct current power supply, a light source system, a test interface and an organic thin film transistor unit. The invention provides a system for testing static output characteristics, switching characteristics and photoelectric characteristics of an organic thin film transistor, which comprises the following components: the light source system irradiates the organic thin film transistor, a grid electrode, a drain electrode and a source electrode of the organic thin film transistor are respectively connected with the direct current power supply, the function signal generator and the current amplifier through the test interface, and the oscilloscope is connected with the current amplifier and is responsible for displaying the output characteristic of the organic thin film transistor. The above devices are connected in common. The testing system can quickly, accurately and visually test the static output characteristic, the switching characteristic and the photoelectric characteristic of the organic thin film transistor.
2. The testing system of an organic thin film transistor according to claim 1, wherein the light source system adopts a 130LP-Xe type wavelength tunable monochromatic light source system when performing a photoelectric test on the organic thin film transistor unit; when the organic thin film transistor unit is tested for the switching characteristic under dynamic illumination, the light source system adopts a frequency-adjustable stroboscopic light source.
3. The system as claimed in claim 1, wherein the test interface comprises three sets of bidirectional connection ports, G (gate) S (source) D (drain).
4. The system as claimed in claim 1, wherein the organic thin film transistor unit comprises: organic thin film diodes, organic thin film transistors.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011468449.2A CN112731092A (en) | 2020-12-15 | 2020-12-15 | Test system of organic thin film transistor |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011468449.2A CN112731092A (en) | 2020-12-15 | 2020-12-15 | Test system of organic thin film transistor |
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| CN112731092A true CN112731092A (en) | 2021-04-30 |
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| CN202011468449.2A Pending CN112731092A (en) | 2020-12-15 | 2020-12-15 | Test system of organic thin film transistor |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114167477A (en) * | 2021-12-08 | 2022-03-11 | 电子科技大学 | Stroboscopic detection system based on thin film detector and design and manufacturing method |
| CN116298754A (en) * | 2023-03-07 | 2023-06-23 | 太仓市晨启电子精密机械有限公司 | Diode waveform testing device with high detection efficiency |
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2020
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Cited By (3)
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|---|---|---|---|---|
| CN114167477A (en) * | 2021-12-08 | 2022-03-11 | 电子科技大学 | Stroboscopic detection system based on thin film detector and design and manufacturing method |
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| CN116298754A (en) * | 2023-03-07 | 2023-06-23 | 太仓市晨启电子精密机械有限公司 | Diode waveform testing device with high detection efficiency |
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Application publication date: 20210430 |