CN112729526A - High-temperature piezoelectric vibration sensor and method for improving stability thereof - Google Patents
High-temperature piezoelectric vibration sensor and method for improving stability thereof Download PDFInfo
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- CN112729526A CN112729526A CN202011520806.5A CN202011520806A CN112729526A CN 112729526 A CN112729526 A CN 112729526A CN 202011520806 A CN202011520806 A CN 202011520806A CN 112729526 A CN112729526 A CN 112729526A
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- 238000000034 method Methods 0.000 title claims description 14
- 239000000919 ceramic Substances 0.000 claims abstract description 34
- 238000010008 shearing Methods 0.000 claims abstract description 17
- 230000032683 aging Effects 0.000 claims description 32
- 230000008859 change Effects 0.000 claims description 11
- 229910002113 barium titanate Inorganic materials 0.000 claims description 6
- 239000007772 electrode material Substances 0.000 claims description 4
- 229910052797 bismuth Inorganic materials 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 230000002146 bilateral effect Effects 0.000 claims 1
- 230000035945 sensitivity Effects 0.000 abstract description 14
- 230000006835 compression Effects 0.000 abstract description 2
- 238000007906 compression Methods 0.000 abstract description 2
- 239000000463 material Substances 0.000 description 7
- 230000000694 effects Effects 0.000 description 5
- 238000005259 measurement Methods 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 229910010293 ceramic material Inorganic materials 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910001069 Ti alloy Inorganic materials 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 1
- 230000003750 conditioning effect Effects 0.000 description 1
- 230000001595 contractor effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- BBKFSSMUWOMYPI-UHFFFAOYSA-N gold palladium Chemical compound [Pd].[Au] BBKFSSMUWOMYPI-UHFFFAOYSA-N 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000003746 solid phase reaction Methods 0.000 description 1
- 230000035882 stress Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01H—MEASUREMENT OF MECHANICAL VIBRATIONS OR ULTRASONIC, SONIC OR INFRASONIC WAVES
- G01H11/00—Measuring mechanical vibrations or ultrasonic, sonic or infrasonic waves by detecting changes in electric or magnetic properties
- G01H11/06—Measuring mechanical vibrations or ultrasonic, sonic or infrasonic waves by detecting changes in electric or magnetic properties by electric means
- G01H11/08—Measuring mechanical vibrations or ultrasonic, sonic or infrasonic waves by detecting changes in electric or magnetic properties by electric means using piezoelectric devices
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P1/00—Details of instruments
- G01P1/006—Details of instruments used for thermal compensation
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P15/09—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by piezoelectric pick-up
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Measurement Of Mechanical Vibrations Or Ultrasonic Waves (AREA)
Abstract
The invention provides a high-temperature piezoelectric vibration sensor which is of a plane shearing structure, wherein an insulating sheet, a wiring piece, a piezoelectric ceramic element, a compensating piece, a wiring piece, an insulating sheet and a mass block are symmetrically assembled towards two sides of the center of a base of the plane shearing structure, and the compensating piece is connected with the piezoelectric ceramic element close to the compensating piece in a series mode. The high-temperature piezoelectric vibration sensor provided by the invention adopts a plane shearing structure, so that the problems of strain sensitivity of a central compression structure to a base, complex assembly of an annular shearing structure and a triangular shearing structure, high cost and the like are solved, and the influence of the sensor on the temperature sensitivity is reduced.
Description
Technical Field
The invention belongs to the technical field of sensors, and particularly relates to a high-temperature piezoelectric vibration sensor and a method for improving the stability of the high-temperature piezoelectric vibration sensor.
Background
The high-temperature piezoelectric vibration sensor is also called as a high-temperature piezoelectric accelerometer, uses a high-temperature piezoelectric material as a sensitive element, utilizes a piezoelectric effect to convert an input vibration acceleration signal into a charge signal to be output for measurement, has the advantages of self-generation, high use temperature, small volume, strong anti-electromagnetic interference capability, long service life, high reliability and the like, is the first choice of the sensor for measuring the vibration of the aeroengine, and has irreplaceability. At present, most high-temperature piezoelectric vibration sensors for domestic aeroengines are 260 ℃ high-temperature piezoelectric vibration sensors which adopt PZT-based piezoelectric ceramics as sensitive elements, and the output mode of the sensors is charge signal output. However, the charge sensitivity of the sensor is increased along with the temperature increase in the use process, and particularly when the working temperature exceeds 180 ℃, the charge sensitivity of the sensor is often more than 20% of the charge sensitivity at room temperature, so that the vibration measurement precision of the sensor is affected, and the high-temperature vibration characteristic of the aircraft engine cannot be truly reflected. Researchers in the industry can perform appropriate signal compensation through an appropriate signal conditioning circuit, but the signal compensation is limited by the working temperature of electronic components (generally not more than 125 ℃) and cannot be realized in the sensor; the piezoelectric performance and stability of the material can be improved to a certain extent by methods such as doping modification and optimized processing production process of the ceramic material, but the improvement capability in the temperature stability is limited due to the inherent characteristics of the material (for example, the working temperature of the conventional piezoelectric ceramic can be stabilized at 1/2 which is generally equal to the Curie temperature of the piezoelectric ceramic, and the Curie temperature of the PZT-based piezoelectric ceramic is generally equal to 350 ℃), so that the satisfactory effect cannot be obtained.
Therefore, it is desirable to provide a high temperature piezoelectric vibration sensor that is temperature stable.
Disclosure of Invention
In order to solve the problems, the invention aims to improve the temperature stability of the high-temperature piezoelectric vibration sensor by using methods such as sensor structural design, part material selection, compensation plate addition, proper aging process and the like aiming at the problem of poor high-temperature stability of the 260 ℃ high-temperature piezoelectric vibration sensor for the aeroengine, so as to improve the measurement precision of the sensor in a high-temperature environment.
The invention provides a high-temperature piezoelectric type vibration sensor which is a plane shearing structure sensor, wherein an insulating sheet, a wiring piece, a piezoelectric ceramic element, a compensating piece, a wiring piece, an insulating sheet and a mass block are symmetrically assembled towards two sides of the center of a base of a plane shearing structure, and the compensating piece is connected with the piezoelectric ceramic element close to the compensating piece in a series mode.
The high-temperature piezoelectric vibration sensor provided by the invention is also characterized in that the piezoelectric ceramic element is fixed on the base through the screw, the elastic modulus E of the screw is more than or equal to 85GPa, and the temperature change rate of the elastic modulus is less than 20%.
The high-temperature piezoelectric vibration sensor provided by the invention is also characterized in that the capacitance change rate of the compensation sheet is opposite to the capacitance temperature change trend of the piezoelectric ceramic element.
The high-temperature piezoelectric vibration sensor provided by the invention is also characterized in that the compensating plate comprises BaTiO3A base ceramic.
The high-temperature piezoelectric vibration sensor provided by the invention is also characterized in that the BaTiO3The base ceramic comprises the following components: ba42.0-44.0 wt%, Ti 13.0-16.5 wt%, Bi 4.5-6.6 wt%, Rb 1.0-1.5 wt%, Sn5.5-6.5 wt%, and the balance C, O.
The high-temperature piezoelectric vibration sensor provided by the invention is also characterized in that the length and the width of the compensation plate are the same as those of the piezoelectric ceramic element, and the thickness is 1/3-1/2 of the thickness of the piezoelectric ceramic element.
The high-temperature piezoelectric vibration sensor provided by the invention is also characterized in that the two sides of the compensating plate are coated with electrode materials with the same components as the piezoelectric ceramic element.
The high-temperature piezoelectric vibration sensor provided by the invention is also characterized in that the vibration sensor is subjected to aging treatment, and the aging treatment comprises a mode of combining temperature aging and vibration aging.
The high-temperature piezoelectric vibration sensor provided by the invention also has the characteristics that the temperature aging is carried out at 280-300 ℃, and the aging time h is more than or equal to 12 h; the vibration aging is vibration aging with vibration magnitude of 2g for 4-6h along the X/Y/Z axis respectively.
Another object of the present invention is to provide a method for improving the temperature stability of a high-temperature piezoelectric vibration sensor, the method for preparing the vibration sensor according to any one of the above embodiments, comprising the steps of:
selecting a plane shearing piezoelectric vibration sensor;
arranging compensation plates on two sides of the base in the plane shearing structure close to the outer sides of the piezoelectric plates;
and carrying out aging treatment combining temperature aging and vibration aging on the piezoelectric vibration sensor.
Advantageous effects
The high-temperature piezoelectric vibration sensor provided by the invention adopts a plane shearing structure, so that the problems of strain sensitivity of a central compression structure to a base, complex assembly of an annular shearing structure and a triangular shearing structure, high cost and the like are solved, and the influence of the sensor on the temperature sensitivity is reduced.
When the material is selected, the screw material is replaced on the basis of the original plane shearing structure, the compensation pieces are added on the two sides of the base in the plane shearing structure and close to the outer sides of the piezoelectric pieces, the compensation pieces are thin, the whole structure of the sensor is not greatly changed, excessive subversive change is not needed, and the cost is saved.
The compensation plate adopted by the invention is BaTiO3The base ceramic has simple manufacturing process, lower cost and good actual effect.
The invention provides a temperature-vibration composite aging mode to improve the temperature stability of the sensor, and particularly provides a vibration aging mode to effectively ensure the service stability of the sensor.
Drawings
Fig. 1 is a schematic structural diagram of a high-temperature piezoelectric vibration sensor according to an embodiment of the present invention;
fig. 2 is a sensitivity variation trend chart of the vibration sensor provided by the embodiment of the present invention and a conventional sensor.
Detailed Description
The present invention is further described in detail with reference to the drawings and examples, but it should be understood that these embodiments are not intended to limit the present invention, and those skilled in the art should understand that the functional, methodological, or structural equivalents of these embodiments or substitutions may be included in the scope of the present invention.
In the description of the embodiments of the present invention, it should be understood that the terms "central", "longitudinal", "lateral", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", etc. indicate orientations or positional relationships based on those shown in the drawings, and are only used for convenience in describing and simplifying the description of the present invention, but do not indicate or imply that the referred device or element must have a specific orientation, be constructed and operated in a specific orientation, and thus, should not be construed as limiting the present invention.
Furthermore, the terms "first," "second," "third," and the like are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicit to a number of indicated technical features. Thus, a feature defined as "first," "second," etc. may explicitly or implicitly include one or more of that feature. In the description of the invention, the meaning of "a plurality" is two or more unless otherwise specified.
The terms "mounted," "connected," and "coupled" are to be construed broadly and may, for example, be fixedly coupled, detachably coupled, or integrally coupled; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meaning of the above terms in the creation of the present invention can be understood by those of ordinary skill in the art through specific situations.
As shown in fig. 1, the present embodiment provides a high-temperature piezoelectric vibration sensor, the vibration sensor is a planar shear structure, the center of the base of the planar shear structure is symmetrically equipped with an insulating plate 3, a connecting plate 5, a piezoelectric ceramic element 4, a compensating plate 6, a connecting plate 5, an insulating plate 3 and a mass block 2 towards two sides, wherein the compensating plate 6 and the piezoelectric ceramic element 4 adjacent to the compensating plate 6 are connected in series. The piezoelectric ceramic element 4 is made of a PZT-based piezoelectric ceramic material.
In the above embodiment, in order to improve the temperature stability of the high-temperature piezoelectric vibration sensor, the sensor structure is designed to be fine, and a plane shearing structure with a transient temperature sensitivity is selected, so that the thermal expansion and cold contraction effect along the sensitive axis direction is as small as possible on the premise of ensuring the working temperature, and the stress degree of the PZT-based piezoelectric ceramic as the sensitive element in the sensor is ensured to be equivalent to that under the condition of relative vibration amplitude within the working temperature range as much as possible. The compensation sheet is connected with the piezoelectric ceramic in series to compensate the capacitance of the sensor.
In some embodiments, the piezoelectric ceramic element 4 is fixed on the base through a screw 1, the elastic modulus E of the screw 1 is more than or equal to 85GPa, and the temperature change rate of the elastic modulus is less than 20%. The screw is made of titanium alloy with high rigidity and good temperature adaptability, the elastic modulus E is more than or equal to 85GPa, the elastic modulus is in the range from room temperature to working temperature, the temperature change rate of the elastic modulus is less than 20%, the screw is relatively well matched with the PZT-based ceramic material, TC4 titanium alloy can be used, and other parts such as a base, a lug plate and the like are made of high-temperature alloy with high strength and temperature resistance, namely high-temperature alloy with the highest working temperature tensile strength alpha more than or equal to 650Mpa and the working temperature more than or equal to 600 ℃, such as GH 600.
In some embodiments, the capacitance change rate of the compensation sheet 6 is opposite to the temperature change trend of the capacitance of the piezoelectric ceramic element. The compensator 6 comprises BaTiO3A base ceramic. BaTiO 23The base ceramic comprises the following components: ba 43.5 wt%, Ti 15.5 wt%, Bi 6.0 wt%, Rb 1.0 wt%, Sn 6.0 wt%, and the balance C, O. The compensating plate 6 is made by a solid-phase reaction method, the length and the width of the compensating plate are the same as those of the piezoelectric ceramic element 4, and the thickness of the compensating plate is 1/3-1/2 of the thickness of the piezoelectric ceramic element 4. And the two sides of the compensating plate 6 are sprayed with electrode materials with the same components as the PZT-based piezoelectric ceramics. The electrode material may be a gold electrode, a gold palladium electrode or a platinum electrode.
In the above embodiment, BaTiO is selected as the compensator 63The base ceramic has simple manufacturing process, lower cost and good actual effect.
In some embodiments, the vibration sensor is subjected to an aging process, which includes a combination of temperature aging and vibration aging. The temperature aging is carried out at 300 ℃, and the aging time h is 12 h; the vibration aging is vibration aging with vibration magnitude of 2g for 4h along the X/Y/Z axis respectively. The method can be carried out by adopting a temperature-vibration composite vibration table, and can also be carried out respectively and independently.
The method for improving the temperature stability of the high-temperature piezoelectric sensor comprises the steps of finely designing the structure of the sensor, selecting proper part materials, carrying out high-temperature compensation in a proper mode on the sensor and carrying out aging treatment in a proper process on the sensor. And further improve the measurement accuracy of the sensor in a high-temperature environment. As shown in fig. 2, a sensitivity variation trend graph of the sensor obtained in the above embodiment and the sensor obtained in the prior art shows that the sensitivity of the sensor in the prior art has large variation in sensitivity deviation both below 0 ℃ and above 150 ℃, while the sensitivity of the sensor obtained by the technical scheme has small deviation in sensitivity at low temperature and high temperature, and the temperature stability of the sensor is effectively improved.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents and improvements made within the spirit and principle of the present invention are intended to be included within the scope of the present invention. The above description is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, several modifications and variations can be made without departing from the technical principle of the present invention, and these modifications and variations should also be regarded as the protection scope of the present invention.
Claims (10)
1. The utility model provides a high temperature piezoelectric type vibration sensor, its characterized in that, vibration sensor is plane shear structure, plane shear structure's base center is equipped with insulating piece, lug, piezoceramics component, compensator plate, lug, insulating piece and quality piece to bilateral symmetry, and wherein, the compensator plate adopts the series connection mode with the piezoceramics component that closes on the compensator plate to connect.
2. The high-temperature piezoelectric vibration sensor according to claim 1, wherein the piezoelectric ceramic element is fixed on the base through a screw, the elastic modulus E of the screw is greater than or equal to 85GPa, and the temperature change rate of the elastic modulus is less than 20%.
3. The high temperature piezoelectric vibration sensor of claim 1, wherein the rate of change of capacitance of the compensator plate is opposite to the trend of change of capacitance temperature of the piezoelectric ceramic element.
4. The high temperature piezoelectric vibration sensor of claim 1, wherein the compensator comprises BaTiO3A base ceramic.
5. The high temperature piezoelectric vibration sensor of claim 4, wherein the BaTiO3The base ceramic comprises the following components: ba42.0-44.0 wt%, Ti 13.0-16.5 wt%, Bi 4.5-6.6 wt%, Rb 1.0-1.5 wt%, Sn5.5-6.5 wt%, and the balance C, O.
6. The high temperature piezoelectric vibration sensor of claim 1, wherein the length and width of the shim is the same as the length and width of the piezo element, and the thickness is 1/3-1/2 of the thickness of the piezo element.
7. A high temperature piezoelectric vibration transducer according to claim 1, wherein the compensator is coated on both sides with an electrode material having the same composition as the piezoelectric ceramic element.
8. The high temperature piezoelectric vibration sensor of claim 1, wherein the vibration sensor is subjected to an aging process comprising a combination of temperature aging and vibration aging.
9. The high-temperature piezoelectric vibration sensor according to claim 1, wherein the temperature aging is that the aging time h is not less than 12h at the temperature of 280-300 ℃; the vibration aging is vibration aging with vibration magnitude of 2g for 4-6h along the X/Y/Z axis respectively.
10. A method for improving the temperature stability of a high temperature piezoelectric vibration sensor, wherein the method is used for preparing the vibration sensor according to any one of claims 1 to 9, and comprises the following steps:
selecting a plane shearing piezoelectric vibration sensor;
arranging compensation plates on two sides of the base in the plane shearing structure close to the outer sides of the piezoelectric plates;
and carrying out aging treatment combining temperature aging and vibration aging on the piezoelectric vibration sensor.
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| CN202011520806.5A CN112729526A (en) | 2020-12-21 | 2020-12-21 | High-temperature piezoelectric vibration sensor and method for improving stability thereof |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116046029A (en) * | 2023-03-27 | 2023-05-02 | 成都凯天电子股份有限公司 | Temperature drift compensation structure of piezoelectric mechanical sensor and compensation method thereof |
| CN117129712A (en) * | 2023-10-25 | 2023-11-28 | 山东利恩斯智能科技有限公司 | Annular piezoelectric ceramic six-dimensional acceleration sensor and measuring method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN117129712A (en) * | 2023-10-25 | 2023-11-28 | 山东利恩斯智能科技有限公司 | Annular piezoelectric ceramic six-dimensional acceleration sensor and measuring method thereof |
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