CN112723302B - MEMS contact switch and preparation method thereof - Google Patents
MEMS contact switch and preparation method thereof Download PDFInfo
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- CN112723302B CN112723302B CN202110338529.4A CN202110338529A CN112723302B CN 112723302 B CN112723302 B CN 112723302B CN 202110338529 A CN202110338529 A CN 202110338529A CN 112723302 B CN112723302 B CN 112723302B
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- 238000002360 preparation method Methods 0.000 title abstract description 5
- 239000000463 material Substances 0.000 claims abstract description 50
- 230000005540 biological transmission Effects 0.000 claims abstract description 19
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 15
- 238000004806 packaging method and process Methods 0.000 claims abstract description 10
- 238000012546 transfer Methods 0.000 claims abstract description 9
- 239000000758 substrate Substances 0.000 claims description 22
- 239000000919 ceramic Substances 0.000 claims description 18
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 15
- 229910052797 bismuth Inorganic materials 0.000 claims description 10
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims description 10
- XSOKHXFFCGXDJZ-UHFFFAOYSA-N telluride(2-) Chemical compound [Te-2] XSOKHXFFCGXDJZ-UHFFFAOYSA-N 0.000 claims description 10
- 238000009833 condensation Methods 0.000 claims description 8
- 230000005494 condensation Effects 0.000 claims description 8
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 6
- 229910021389 graphene Inorganic materials 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 238000007789 sealing Methods 0.000 claims description 6
- 239000004372 Polyvinyl alcohol Substances 0.000 claims description 5
- 239000012535 impurity Substances 0.000 claims description 5
- 229920002451 polyvinyl alcohol Polymers 0.000 claims description 5
- 239000000565 sealant Substances 0.000 claims description 5
- 238000005530 etching Methods 0.000 claims description 3
- 238000005538 encapsulation Methods 0.000 claims description 2
- 238000009413 insulation Methods 0.000 claims 2
- 239000004593 Epoxy Substances 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 229920006395 saturated elastomer Polymers 0.000 description 2
- 230000005679 Peltier effect Effects 0.000 description 1
- 238000005299 abrasion Methods 0.000 description 1
- 230000006399 behavior Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000005518 polymer electrolyte Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00023—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems without movable or flexible elements
- B81C1/00047—Cavities
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00349—Creating layers of material on a substrate
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Devices That Are Associated With Refrigeration Equipment (AREA)
Abstract
The invention provides an MEMS contact switch and a preparation method thereof, comprising the following steps: a Peltier refrigerator; a switching material layer disposed on an upper surface of the Peltier refrigerator; a transfer electrode layer covering the Peltier cooler and an upper surface of the switching material layer; a capillary channel formed on an upper surface of the switching material layer and separating the transfer electrode layer; and covering the transmission electrode layer to form a packaging pipe cap sealed with a sealed cavity of quantitative water and gas. The invention integrates the MEMS switch with the Peltier refrigerator. There are no moving mechanical parts in the switch and no material wear and mechanical sticking problems. The switch has high contact reliability, is easy to use and is not easy to damage.
Description
Technical Field
The invention belongs to the field of micro-electromechanical sensors, and particularly relates to an MEMS contact switch and a preparation method thereof.
Background
Electronic switches have wide application in the fields of electronics and communications. Compared with transistor switches, MEMS switches have low insertion loss, high isolation, and good linearity, and thus are receiving more and more attention.
The conventional MEMS switch is classified into a contact type and a non-contact type, and the driving manner thereof is usually mainly electrostatic driving and thermal driving. In 1999, p.m. Zavracky et al proposed an electrostatically driven MEMS contact switch with small size, low power consumption, low contact resistance, and operating frequency up to 100 kHz. In 2002, j.b. Rizk (trade name), et al proposed an electrostatically driven MEMS capacitive switch with an operating frequency of 0.5-6 GHz and a capacitance ratio of 20: 1. In 2007, Jiwei Huang (name of the people) and other people put forward a thermally-driven contact switch, the thermal drive is utilized to realize the contact of a transverse metal contact, the working frequency is 0-8 GHz, and the thermally-driven contact switch has good radio frequency performance.
Conventional MEMS switches, whether electrostatically or thermally actuated, have mechanically movable components and thus mechanical damage is a major cause of failure. For a contact switch, since the contact point is repeatedly impacted, material abrasion and mechanical adhesion are very easily generated, resulting in failure of the switch.
Disclosure of Invention
The invention aims to provide an MEMS contact switch without a mechanical movable part, which realizes the on-off of the switch through temperature control: and the temperature is reduced to cause capillary condensation, so that the input electrode and the output electrode are electrically contacted under the help of condensed water in the capillary channel and a switch material, and the current transmission is realized. The temperature rise causes water molecules to evaporate, and the switch material layer shows an insulating property, so that the switch is turned off.
In order to achieve the above purpose, the invention provides an MEMS contact switch and a method for manufacturing the same, the specific scheme is as follows:
a MEMS contact switch, the MEMS contact switch comprising:
a Peltier refrigerator;
a layer of switching material disposed on an upper surface of the Peltier refrigerator;
a transfer electrode layer covering the Peltier cooler and an upper surface of the switching material layer;
a capillary channel formed on an upper surface of the switching material layer and separating the transfer electrode layer;
and the packaging pipe cap covers the transmission electrode layer to form a sealed cavity sealed with quantitative water vapor.
Optionally, the peltier cooler comprises:
a first ceramic substrate;
a first electrode array disposed on the first ceramic substrate;
a thermocouple array disposed on the first electrode array;
a second electrode array disposed on the thermocouple array;
a second ceramic substrate disposed on the second electrode array.
Optionally, the thermocouple array is formed by alternately arranging P-type doped bismuth telluride materials and N-type doped bismuth telluride materials.
Optionally, the electrodes on the left and right sides of the first electrode array are input ends or output ends of the peltier cooler.
Alternatively, the switching material layer has an insulating property under a dry condition and has a conductive property under a dew condensation condition.
Optionally, the switching material layer is graphene oxide or polyvinyl alcohol doped with potassium hydroxide impurities.
Optionally, the packaging cap is adhered to the surface of the transmission electrode layer by a sealant.
The invention also provides a preparation method of the MEMS contact switch, which comprises the following steps:
selecting a Peltier refrigerator as a substrate;
preparing a switching material layer on the upper surface of the Peltier refrigerator;
forming an electrode layer covering the switch material layer, and etching the electrode layer to form a transmission electrode layer and a capillary channel for spacing the transmission electrode layer;
and sealing and packaging the pipe cap on the surface of the transmission electrode layer to form a sealed cavity sealed with quantitative water and air.
Optionally, the switching material layer is graphene oxide or polyvinyl alcohol doped with potassium hydroxide impurities.
Optionally, the hermetically sealing the cap is done at 25 ℃ and 50% relative humidity.
The invention has the following beneficial effects:
the invention integrates the MEMS switch with the Peltier refrigerator. There are no moving mechanical parts in the switch and no material wear and mechanical sticking problems. The switch has high contact reliability, is easy to use and is not easy to damage.
Drawings
One or more embodiments are illustrated by way of example in the accompanying drawings, which correspond to the figures in which like reference numerals refer to similar elements and which are not to scale unless otherwise specified.
FIG. 1 is a schematic cross-sectional view of a MEMS contact switch according to one embodiment of the present invention;
fig. 2 is a schematic diagram of a manufacturing process of a MEMS contact switch according to an embodiment of the invention.
In the figure: 1. the structure of the thermoelectric module comprises a first ceramic substrate, 2, a first electrode array, 3, a thermocouple array, 4, a second electrode array, 5, a second ceramic substrate, 6, a switch material layer, 7, a transmission electrode layer, 8, epoxy sealant, 9, a packaging pipe cap, 10, a capillary channel, 11 and a cavity.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention more apparent, embodiments of the present invention will be described in detail below with reference to the accompanying drawings. However, it will be appreciated by those of ordinary skill in the art that numerous technical details are set forth in order to provide a better understanding of the present application in various embodiments of the present invention. However, the technical solution claimed in the present application can be implemented without these technical details and various changes and modifications based on the following embodiments. The following embodiments are divided for convenience of description, and should not constitute any limitation to the specific implementation manner of the present invention, and the embodiments may be mutually incorporated and referred to without contradiction.
Example 1
Referring to fig. 1, the present invention provides a MEMS contact switch including a stacked peltier cooler and a switching structure formed above the cooler. In particular, the amount of the solvent to be used,
the peltier cooler comprises:
a first ceramic substrate 1;
a first electrode array 2 disposed on the first ceramic substrate 1;
a thermocouple array 3, the thermocouple array 3 being disposed on the first electrode array 2; the thermocouple array is formed by alternately arranging a P-type doped bismuth telluride material and an N-type doped bismuth telluride material.
A second electrode array 4, the second electrode array 4 being disposed on the thermocouple array 3;
a second ceramic substrate 5, the second ceramic substrate 5 being disposed on the second electrode array 4;
a switching material layer 6 disposed on an upper surface of the peltier cooler, i.e., an upper surface of the second ceramic substrate 5; the switching material layer 6 is for example chosen from certain two-dimensional materials (such as graphene oxide) or certain solid polymer electrolytes (such as polyvinyl alcohol doped with potassium hydroxide impurities), the switching material layer 6 having good insulating properties in dry conditions. The switching material layer 6 has good conductivity when it meets water under the dew condensation condition.
A transmission electrode layer 7 covering the peltier cooler and the upper surface of the switching material layer 6; is divided into two parts by the capillary channel 10, and respectively serves as an input electrode and an output electrode for transmitting current.
The packaging pipe cap 9 covers the transmission electrode, a cavity 11 is arranged below the transmission electrode, and a certain amount of water vapor is sealed in the cavity 11.
The encapsulation cap 9 is bonded to the structural surface, for example by an epoxy sealant 8, at an ambient temperature of 25 c and 50% relative humidity.
Peltier refrigerators, also called thermoelectric refrigerators or thermoelectric refrigerators, utilize the Peltier effect; in this embodiment, the thermocouple array 3 of the peltier cooler is formed by alternately arranging a P-type doped bismuth telluride material and an N-type doped bismuth telluride material. The control current is introduced from the left end and the right end of the first electrode array 2, when the current directions are different, heat absorption and heat release phenomena are generated at the thermocouple node, and when the surface of the first ceramic substrate 1 is heated, the surface of the second ceramic substrate 5 is cooled, and the current directions are changed, so that the heat absorption and heat release behaviors are opposite.
The working principle of the MEMS contact switch provided by the invention is as follows:
saturated vapor pressure P in the plane according to the Kelvin equation ws And saturated vapor pressure above the meniscusP wsr The following relationships exist:
wherein,ris the radius of curvature of the curved liquid surface.
Since the material of the transfer electrode layer is hydrophilic, the liquid level in the capillary channel will be a concave liquid level, and, therefore, for the capillary channel,ris negative, so:
P wsr <P ws
that is, in the capillary channel, condensation is more likely to occur, which is referred to as the capillary condensation effect. When the external humidity environment is determined, a proper control current is loaded to locally cool the element above the Peltier refrigerator, and condensed water is formed in the capillary channel. The switch material layer 6 is conductive when meeting water, so that the switch is in a switch-on state; if the control current is reversed so that the element above the peltier cooler is locally heated up, water molecules in the capillary channel evaporate, the switching material layer 6 is dried, the insulating properties are exhibited, and the switch is in the off state.
Example 2
The invention also provides a manufacturing method of the MEMS contact switch in embodiment 1, which comprises the following steps:
as shown in fig. 2: the method comprises the following steps:
s1, selecting a Peltier refrigerator as a substrate;
s2, preparing a switch material layer on the upper surface of the Peltier refrigerator;
s3, forming an electrode layer covering the switch material layer, and etching the electrode layer to form a transmission electrode layer and a capillary channel for spacing the transmission electrode layer;
and S4, sealing and packaging the tube cap on the surface of the transmission electrode layer to form a sealed cavity sealed with a fixed amount of water and air.
Specifically, a commercial peltier cooler composed of a first ceramic substrate 1, a first electrode array 2, a thermocouple array 3, a second electrode array 4, and a second ceramic substrate 5 is selected as a substrate. The thermocouple array 3 of the peltier cooler is formed by alternately arranging a P-type doped bismuth telluride material and an N-type doped bismuth telluride material.
Next, a graphene oxide material layer is prepared on the upper surface of the second ceramic substrate 5 by transfer, and a switching material layer 6 is formed by photolithography patterning and dry etching.
Then, a transfer electrode layer 7 and a capillary channel 10 are formed by depositing gold metal by an evaporation process and photolithographically patterning, dry etching.
Finally, under the conditions that the temperature is T and the partial pressure of water vapor is Pw, the packaging pipe cap 9 formed by thermosetting is adhered to the surface of the structure through the epoxy sealant 8, and a sealing cavity 11 sealed with quantitative water vapor is formed. The critical temperature for moisture condensation in the capillary channel 10 is
Wherein A, m and TnAnd k is an empirical parameter.
The MEMS switch is integrated with the peltier cooler. There are no moving mechanical parts in the switch and no material wear and mechanical sticking problems. The switch has high contact reliability, is easy to use and is not easy to damage.
It will be understood by those of ordinary skill in the art that the foregoing embodiments are specific examples for carrying out the invention, and that various changes in form and details may be made therein without departing from the spirit and scope of the invention in practice.
Claims (9)
1. A MEMS contact switch, comprising:
a Peltier refrigerator;
a layer of switching material disposed on an upper surface of the Peltier refrigerator; the switching material layer has insulation properties under dry conditions and has conductivity under dew condensation conditions;
a transfer electrode layer covering the Peltier cooler and an upper surface of the switching material layer;
a capillary channel formed on an upper surface of the switching material layer and separating the transfer electrode layer;
and the packaging pipe cap covers the transmission electrode layer to form a sealed cavity sealed with quantitative water vapor.
2. A MEMS contact switch as recited in claim 1, wherein said peltier cooler comprises:
a first ceramic substrate;
a first electrode array disposed on the first ceramic substrate;
a thermocouple array disposed on the first electrode array;
a second electrode array disposed on the thermocouple array;
a second ceramic substrate disposed on the second electrode array.
3. The MEMS contact switch of claim 2, wherein the thermocouple array is formed by alternating P-type doped bismuth telluride material and N-type doped bismuth telluride material.
4. A MEMS contact switch as claimed in claim 2 or claim 3 wherein the electrodes on the left and right sides of the first electrode array are the inputs or outputs of the peltier cooler.
5. The MEMS contact switch of claim 1, wherein the layer of switching material is graphene oxide or polyvinyl alcohol doped with potassium hydroxide impurities.
6. The MEMS contact switch of claim 1, wherein the encapsulation cap is adhered to the surface of the transmission electrode layer by a sealant.
7. A method of making a MEMS contact switch as claimed in any one of claims 1 to 6, comprising the steps of:
selecting a Peltier refrigerator as a substrate;
preparing a switching material layer on the upper surface of the Peltier refrigerator; the switching material layer has insulation properties under dry conditions and has conductivity under dew condensation conditions;
forming an electrode layer covering the switch material layer, and etching the electrode layer to form a transmission electrode layer and a capillary channel for spacing the transmission electrode layer;
and sealing and packaging the pipe cap on the surface of the transmission electrode layer to form a sealed cavity sealed with quantitative water and air.
8. The method of making a MEMS contact switch as recited in claim 7, wherein the layer of switching material is graphene oxide or polyvinyl alcohol doped with potassium hydroxide impurities.
9. The method of making a MEMS contact switch as recited in claim 7, wherein the hermetically sealing the cap is performed at 25 ℃ and 50% relative humidity.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110338529.4A CN112723302B (en) | 2021-03-30 | 2021-03-30 | MEMS contact switch and preparation method thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110338529.4A CN112723302B (en) | 2021-03-30 | 2021-03-30 | MEMS contact switch and preparation method thereof |
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| Publication Number | Publication Date |
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| CN112723302A CN112723302A (en) | 2021-04-30 |
| CN112723302B true CN112723302B (en) | 2021-06-25 |
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| CN114712546B (en) * | 2022-05-19 | 2022-08-23 | 中电科奥义健康科技有限公司 | Plane structure disinfection factor generation device and manufacturing method |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5598971A (en) * | 1995-08-17 | 1997-02-04 | Bevles Company, Inc. | Humidity control system |
| US6126311A (en) * | 1998-11-02 | 2000-10-03 | Claud S. Gordon Company | Dew point sensor using mems |
| CN206074211U (en) * | 2016-10-15 | 2017-04-05 | 渤海大学 | A kind of low temperature environment charger for the test of MEMS micro-structure dynamic characteristics |
| CN211698735U (en) * | 2020-04-29 | 2020-10-16 | 深圳彩果科技有限公司 | Control system of semiconductor temperature adjusting device |
-
2021
- 2021-03-30 CN CN202110338529.4A patent/CN112723302B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5598971A (en) * | 1995-08-17 | 1997-02-04 | Bevles Company, Inc. | Humidity control system |
| US6126311A (en) * | 1998-11-02 | 2000-10-03 | Claud S. Gordon Company | Dew point sensor using mems |
| CN206074211U (en) * | 2016-10-15 | 2017-04-05 | 渤海大学 | A kind of low temperature environment charger for the test of MEMS micro-structure dynamic characteristics |
| CN211698735U (en) * | 2020-04-29 | 2020-10-16 | 深圳彩果科技有限公司 | Control system of semiconductor temperature adjusting device |
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