CN112713221A - Surface protection method for high-purity germanium detector - Google Patents
Surface protection method for high-purity germanium detector Download PDFInfo
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- CN112713221A CN112713221A CN202011641232.7A CN202011641232A CN112713221A CN 112713221 A CN112713221 A CN 112713221A CN 202011641232 A CN202011641232 A CN 202011641232A CN 112713221 A CN112713221 A CN 112713221A
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- germanium detector
- germanium
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- 229910052732 germanium Inorganic materials 0.000 title claims abstract description 129
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 title claims abstract description 129
- 238000000034 method Methods 0.000 title claims abstract description 29
- 239000010410 layer Substances 0.000 claims abstract description 26
- 238000004140 cleaning Methods 0.000 claims abstract description 16
- 239000011241 protective layer Substances 0.000 claims abstract description 16
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 6
- 239000001301 oxygen Substances 0.000 claims abstract description 6
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 6
- 239000000843 powder Substances 0.000 claims description 23
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 12
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 6
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 6
- 239000002253 acid Substances 0.000 claims description 6
- 229910052593 corundum Inorganic materials 0.000 claims description 6
- 239000010431 corundum Substances 0.000 claims description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 5
- 229910052802 copper Inorganic materials 0.000 claims description 5
- 239000010949 copper Substances 0.000 claims description 5
- 239000000523 sample Substances 0.000 claims description 4
- 229910052786 argon Inorganic materials 0.000 claims description 3
- 230000007547 defect Effects 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 238000004544 sputter deposition Methods 0.000 claims description 3
- 239000013077 target material Substances 0.000 claims description 3
- 229910021642 ultra pure water Inorganic materials 0.000 claims description 3
- 239000012498 ultrapure water Substances 0.000 claims description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 3
- 230000000873 masking effect Effects 0.000 claims description 2
- 230000002035 prolonged effect Effects 0.000 abstract description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000001514 detection method Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02096—Cleaning only mechanical cleaning
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/115—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
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- Other Investigation Or Analysis Of Materials By Electrical Means (AREA)
Abstract
The invention discloses a germanium detector surface protection method, which comprises the following steps: removing an oxide layer on the surface of the germanium detector; cleaning the surface of the germanium detector; protecting the center and the side of the germanium detector by using a mask; and putting the germanium detector into a vacuum cavity, and preparing a protective layer on the surface of the germanium detector. By the method, the protective layer with the preset thickness can be formed on the surface of the germanium detector, so that the contact between the surface of the germanium detector and oxygen can be effectively isolated, the surface of the germanium detector is stable in performance, and the service life of the germanium detector is effectively prolonged.
Description
Technical Field
The invention relates to the field of detectors, in particular to a surface protection method for a high-purity germanium detector.
Background
The high-purity germanium detector is a semiconductor nuclear radiation detector with high energy resolution and high detection efficiency. In the using process, the surface of the high-purity germanium detector can be slowly and spontaneously oxidized, the stability and the electrical property of the natural oxide of the high-purity germanium detector are poor, the surface leakage current of the oxidized high-purity germanium detector is increased, the energy resolution ratio is poor, the performance of the high-purity germanium detector is influenced, and even the high-purity germanium detector cannot be used. Therefore, there is a need for a suitable method for protecting the surface of a high purity germanium detector to enhance its oxidation resistance and thereby increase the lifetime of the high purity germanium detector.
Disclosure of Invention
The invention mainly aims to provide a surface protection method for a germanium detector, which is used for protecting the surface of a high-purity germanium detector and prolonging the service life of the germanium detector.
In order to achieve the above object, the present invention provides a method for protecting a surface of a germanium detector, comprising:
removing an oxide layer on the surface of the germanium detector;
cleaning the surface of the germanium detector;
protecting the center and the side of the germanium detector by using a mask;
and putting the germanium detector into a vacuum cavity, and preparing a protective layer on the surface of the germanium detector.
Further, the removing the oxide layer on the surface of the germanium detector comprises:
cleaning the surface of the germanium detector with acetone;
grinding the surface of the germanium detector to remove the oxide layer on the surface.
Further, the grinding the surface of the germanium detector to remove the oxide layer on the surface includes:
grinding the surface of the germanium detector with a coarse diameter powder;
grinding the surface of the germanium detector with a fine diameter powder until no apparent defects are observed on the surface of the germanium detector under a metallographic microscope.
Further, the coarse diameter powder is coarse diameter carborundum powder, coarse diameter corundum powder or coarse diameter carborundum powder; the fine diameter powder is fine diameter carborundum powder, fine diameter corundum powder or fine diameter carborundum powder.
Further, after the grinding the surface of the germanium detector, the removing the oxide layer of the surface of the germanium detector further includes: treating the surface of the germanium detector with an acid for a predetermined time.
Further, the treating the surface of the germanium detector with an acid for a preset time includes: treating the surface of the germanium detector with hydrofluoric acid for a predetermined time.
Further, the cleaning the surface of the germanium detector includes: ultrasonically cleaning the workpiece for a first preset time by using water; and ultrasonically cleaning the workpiece with ultrapure water for a second preset time.
Further, the protecting the center and the side of the germanium detector with a mask includes: shielding the center of the germanium detector by using a first mask; and attaching the side surface of the germanium detector by using a second mask.
Further, the first mask is a copper mask; the second mask is a copper mask.
Further, the step of placing the germanium detector into a vacuum chamber and preparing a protective layer on the surface of the germanium detector includes: placing the germanium detector and the mask protecting the center and the side faces of the germanium detector in the vacuum cavity provided with the target material, and vacuumizing the vacuum cavity until the vacuum degree in the vacuum cavity reaches a preset vacuum degree; and heating the germanium detector to a preset temperature, introducing nitrogen, oxygen and argon into the vacuum cavity according to a preset proportion, and sputtering until the protective layer with a preset thickness is formed on the surface of the germanium detector.
As described above, the present invention provides a method for protecting a surface of a germanium detector, which can form a protective layer with a predetermined thickness on the surface of the germanium detector, and can effectively isolate the contact between the surface of the germanium detector and oxygen, so that the surface of the germanium detector has stable performance, and the service life of the germanium detector is effectively prolonged.
Drawings
Other objects and advantages of the present invention will become apparent from the following description of the invention which refers to the accompanying drawings, and may assist in a comprehensive understanding of the invention.
FIG. 1 is a schematic flow diagram of a method of germanium detector surface protection according to some embodiments of the present invention;
fig. 2 a-2 c are process schematic diagrams of a method of germanium detector surface protection according to some embodiments of the present invention.
It is noted that the drawings are not necessarily to scale and are merely illustrative in nature and not intended to obscure the reader.
Description of reference numerals:
210. a germanium detector; 212. a surface; 214. a side surface; 216. a center; 220. an oxide layer; 230. a protective layer; 310. a first mask; 320. and a second mask.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the technical solutions of the present invention will be described clearly and completely with reference to the accompanying drawings of the embodiments of the present invention. It should be apparent that the described embodiment is one embodiment of the invention, and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the described embodiments of the invention without any inventive step, are within the scope of protection of the invention.
It is to be noted that technical terms or scientific terms used herein should have the ordinary meaning as understood by those having ordinary skill in the art to which the present invention belongs, unless otherwise defined. If the description "first", "second", etc. is referred to throughout, the description of "first", "second", etc. is used only for distinguishing similar objects, and is not to be construed as indicating or implying a relative importance, order or number of technical features indicated, it being understood that the data described in "first", "second", etc. may be interchanged where appropriate. If "and/or" is presented throughout, it is meant to include three juxtapositions, exemplified by "A and/or B" and including either scheme A, or scheme B, or schemes in which both A and B are satisfied. Furthermore, spatially relative terms, such as "above," "below," "top," "bottom," and the like, may be used herein for ease of description to describe one element or feature's spatial relationship to another element or feature as illustrated in the figures, and should be understood to encompass different orientations in use or operation in addition to the orientation depicted in the figures.
Fig. 1 is a schematic flow diagram of a method of germanium detector surface protection according to some embodiments of the present invention. As shown in fig. 1, the method for protecting the surface of the germanium detector comprises the following steps:
step S110: removing an oxide layer on the surface of the germanium detector;
step S130: cleaning the surface of the germanium detector;
step S150: protecting the center and the side of the germanium detector by using a mask;
step S170: and putting the germanium detector into a vacuum cavity, and preparing a protective layer on the surface of the germanium detector.
In step S110, as shown in fig. 2a, the oxide layer 220 on the surface 212 of the ge detector 210 is removed. It should be noted that the oxide layer 220 is a natural oxide formed by the slow oxidation of the surface of the germanium detector when the surface is in contact with air.
In an embodiment, the removing the oxide layer on the surface of the germanium detector in step S110 may further include:
cleaning the surface 212 of the germanium detector 210 (including the oxide layer 220 on the surface 212) with acetone;
the surface 212 of the ge detector 210, including the oxide layer 220 on the surface 212, is polished to remove the oxide layer 220 on the surface 212.
In one embodiment, grinding the surface 212 of the germanium detector 210 (including the oxide layer 220 on the surface 212) to remove the oxide layer 220 on the surface 212 may further include:
grinding the surface 212 of the germanium detector 210 (including the oxide layer 220 on the surface 212) with a coarse diameter powder such as silicon carbide, corundum, silicon carbide, etc.;
the surface 212 of the ge probe 210 (including the oxide layer 220 on the surface 212) is ground with a fine diameter powder such as silicon carbide, corundum, silicon carbide, etc., until the surface 212 of the ge probe 210 does not exhibit any significant defects as observed under a metallographic microscope.
In order to more thoroughly remove the oxide layer 220 on the surface 212 of the germanium detector 210, after the grinding of the surface 212 of the germanium detector 210 (including the oxide layer 220 on the surface 212), the removing the oxide layer on the surface of the germanium detector in step S110 may further include:
the surface 212 of the germanium detector 210 is treated with an acid, such as hydrofluoric acid, for a predetermined time (e.g., 1 minute).
Then, in step S130, the surface 212 of the germanium detector 210 may be cleaned to remove powder or acid remaining during the grinding process, so as to obtain a protective layer with a certain amount of performance in step S170.
In an embodiment, the cleaning the surface of the germanium detector in step S130 may include:
ultrasonically cleaning with water for a first preset number of times (such as 15 times);
ultrasonically cleaning with ultrapure water for a second preset number of times (such as 15 times).
In step S150, as shown in fig. 2b, the center 216 and the side 214 of the germanium detector 210 may be protected by a plurality of masks to prevent damage to the center 216 and the side 214 of the germanium detector 210 caused by the subsequent manufacturing process in step S170. Specifically, the step S150 of protecting the center and the side of the germanium detector with a mask may include:
When a heating process is included in the subsequent step S170, the first mask 310 and the second mask 320 are selected to be a material resistant to high temperature (e.g., greater than 300 degrees celsius). For example, the first mask 310 and the second mask 320 may be copper masks, respectively.
In step S170, a protective layer may be prepared on the surface of the germanium detector by a reactive sputtering method in the vacuum chamber. Specifically, in step S170, the method for preparing a protective layer on the surface of a germanium detector by placing the germanium detector into a vacuum chamber includes:
placing the germanium detector 210 and masks (including the first mask 310 and the second mask 320) for protecting the center 216 and the side surfaces 214 of the germanium detector 210 in a vacuum chamber provided with a target material, and vacuumizing the vacuum chamber until the vacuum degree in the vacuum chamber reaches a preset vacuum degree;
the ge detector 210 is heated to a predetermined temperature (e.g., 300 degrees c) and nitrogen, oxygen and argon are introduced into the vacuum chamber at a predetermined ratio (e.g., 4:2:1) to perform sputtering until a protective layer 230 of a predetermined thickness (e.g., greater than 100 nm) is formed on the surface 212 of the ge detector 210, as shown in fig. 2 c.
By the method, the protective layer 230 with a preset thickness (for example, more than 100 nanometers) can be formed on the surface 212 of the germanium detector 210, so that the contact between the surface 212 of the germanium detector 210 and oxygen can be effectively isolated, the performance of the surface 212 of the germanium detector 210 is stable, and the service life of the germanium detector 210 is effectively prolonged.
It should also be noted that, in the case of the embodiments of the present invention, features of the embodiments and examples may be combined with each other to obtain a new embodiment without conflict.
The above description is only an embodiment of the present invention, but the scope of the present invention is not limited thereto, and the scope of the present invention is subject to the scope of the claims.
Claims (10)
1. A method for protecting the surface of a germanium detector is characterized by comprising the following steps:
removing the oxide layer (220) from the surface (212) of the germanium detector (210);
cleaning the surface (212) of the germanium detector (210);
protecting a center (216) and sides (214) of the germanium detector (210) with a mask (310, 320);
placing the germanium detector (210) into a vacuum chamber, and preparing a protective layer (230) on the surface (212) of the germanium detector (210).
2. A method of protecting a surface of a germanium detector according to claim 1, wherein: the removing of the oxide layer (220) of the surface (212) of the germanium detector (210) comprises:
cleaning the surface (212) of the germanium detector (210) with acetone;
grinding the surface (212) of the germanium detector (210) to remove the oxide layer (220) on the surface (212).
3. A method of protecting a surface of a germanium detector according to claim 2, wherein: the grinding the surface (212) of the germanium detector (210) to remove the oxide layer (220) on the surface (212) comprises:
grinding the surface (212) of the germanium detector (210) with a coarse diameter powder;
grinding said surface (212) of said germanium probe (210) with a fine diameter powder until grinding is stopped when no significant defects are observed on said surface (212) of said germanium probe (210) under a metallographic microscope.
4. A method for protecting a surface of a germanium detector according to claim 3, wherein: the coarse diameter powder is coarse diameter carborundum powder, coarse diameter corundum powder or coarse diameter carborundum powder; the fine diameter powder is fine diameter carborundum powder, fine diameter corundum powder or fine diameter carborundum powder.
5. A method of protecting a surface of a germanium detector according to claim 2, wherein: said removing an oxide layer (220) of a surface (212) of a germanium detector (210) after said grinding of said surface (212) of said germanium detector (210), further comprising:
treating the surface (212) of the germanium detector (210) with an acid for a preset time.
6. A method for protecting a surface of a germanium detector according to claim 5, wherein: the treating the surface (212) of the germanium detector (210) with an acid for a preset time includes:
treating the surface (212) of the germanium detector (210) with hydrofluoric acid for a predetermined time.
7. A method for protecting a surface of a germanium detector according to any one of claims 1 to 6, wherein: the cleaning the surface (212) of the germanium detector (210) comprises:
ultrasonically cleaning the workpiece for a first preset time by using water;
and ultrasonically cleaning the workpiece with ultrapure water for a second preset time.
8. A method for protecting a surface of a germanium detector according to claim 7, wherein: the protecting the center (216) and sides (214) of the germanium detector (210) with a mask (310, 320) comprising:
masking a center (216) of the germanium detector (210) with a first mask (310);
the side (214) of the germanium detector (210) is attached using a second mask (320).
9. A method for protecting a surface of a germanium detector according to claim 8, wherein: the first mask (310) is a copper mask; the second mask (320) is a copper mask.
10. A method for protecting a surface of a germanium detector according to claim 8, wherein: the placing the germanium detector (210) into a vacuum chamber, preparing a protective layer (230) on the surface (212) of the germanium detector (210), comprising:
placing the germanium detector (210) and the masks (310, 320) protecting the center (216) and the side faces (214) of the germanium detector (210) in the vacuum chamber provided with the target material, and vacuumizing the vacuum chamber until the vacuum degree in the vacuum chamber reaches a preset vacuum degree;
heating the germanium detector (210) to a preset temperature, introducing nitrogen, oxygen and argon into the vacuum cavity according to a preset proportion, and sputtering until the protective layer (230) with a preset thickness is formed on the surface (212) of the germanium detector (210).
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| Application Number | Priority Date | Filing Date | Title |
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| CN202011641232.7A CN112713221A (en) | 2020-12-31 | 2020-12-31 | Surface protection method for high-purity germanium detector |
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| CN202011641232.7A CN112713221A (en) | 2020-12-31 | 2020-12-31 | Surface protection method for high-purity germanium detector |
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Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20110045654A1 (en) * | 2008-06-10 | 2011-02-24 | S.O.I.T.E.C. Silicon On Insulator Technologies | Germanium layer polishing |
| US20110223706A1 (en) * | 2010-03-10 | 2011-09-15 | Hildreth Jill C | Method of forming a photodetector |
| CN102664144A (en) * | 2012-05-18 | 2012-09-12 | 北京大学 | Interface processing method for germanium-base device |
| CN102881562A (en) * | 2012-10-11 | 2013-01-16 | 北京大学 | Surface passivation method of germanium-based substrate |
| US20140264049A1 (en) * | 2013-03-15 | 2014-09-18 | Canberra Industries, Inc. | SMALL ANODE GERMANIUM (SAGe) WELL RADIATION DETECTOR SYSTEM AND METHOD |
| CN206680565U (en) * | 2016-11-18 | 2017-11-28 | 上海新漫传感技术研究发展有限公司 | The HpGe deep hole lithium evaporation equipment of high purity germanium detector |
| CN112086537A (en) * | 2020-09-21 | 2020-12-15 | 清华大学 | High-purity germanium detector |
-
2020
- 2020-12-31 CN CN202011641232.7A patent/CN112713221A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20110045654A1 (en) * | 2008-06-10 | 2011-02-24 | S.O.I.T.E.C. Silicon On Insulator Technologies | Germanium layer polishing |
| US20110223706A1 (en) * | 2010-03-10 | 2011-09-15 | Hildreth Jill C | Method of forming a photodetector |
| CN102664144A (en) * | 2012-05-18 | 2012-09-12 | 北京大学 | Interface processing method for germanium-base device |
| CN102881562A (en) * | 2012-10-11 | 2013-01-16 | 北京大学 | Surface passivation method of germanium-based substrate |
| US20140264049A1 (en) * | 2013-03-15 | 2014-09-18 | Canberra Industries, Inc. | SMALL ANODE GERMANIUM (SAGe) WELL RADIATION DETECTOR SYSTEM AND METHOD |
| CN206680565U (en) * | 2016-11-18 | 2017-11-28 | 上海新漫传感技术研究发展有限公司 | The HpGe deep hole lithium evaporation equipment of high purity germanium detector |
| CN112086537A (en) * | 2020-09-21 | 2020-12-15 | 清华大学 | High-purity germanium detector |
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