CN206680565U - The HpGe deep hole lithium evaporation equipment of high purity germanium detector - Google Patents
The HpGe deep hole lithium evaporation equipment of high purity germanium detector Download PDFInfo
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- CN206680565U CN206680565U CN201621237021.6U CN201621237021U CN206680565U CN 206680565 U CN206680565 U CN 206680565U CN 201621237021 U CN201621237021 U CN 201621237021U CN 206680565 U CN206680565 U CN 206680565U
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- China
- Prior art keywords
- purity germanium
- single crystal
- hpge
- tungsten filament
- filament electrode
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- 229910052732 germanium Inorganic materials 0.000 title claims abstract description 66
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 title claims abstract description 66
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 title claims abstract description 42
- 229910052744 lithium Inorganic materials 0.000 title claims abstract description 42
- 238000001704 evaporation Methods 0.000 title claims abstract description 29
- 230000008020 evaporation Effects 0.000 title claims abstract description 25
- 239000013078 crystal Substances 0.000 claims abstract description 47
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims abstract description 32
- 239000010937 tungsten Substances 0.000 claims abstract description 32
- 229910052721 tungsten Inorganic materials 0.000 claims abstract description 32
- 238000000034 method Methods 0.000 description 4
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 229910000737 Duralumin Inorganic materials 0.000 description 1
- 230000001154 acute effect Effects 0.000 description 1
- 239000002390 adhesive tape Substances 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000005251 gamma ray Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- XLYOFNOQVPJJNP-ZSJDYOACSA-N heavy water Substances [2H]O[2H] XLYOFNOQVPJJNP-ZSJDYOACSA-N 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000011017 operating method Methods 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Abstract
The utility model discloses a kind of HpGe deep hole lithium evaporation equipment of high purity germanium detector, including the high-purity germanium single crystal being arranged on bottom plate, transportable baffle plate is provided with above high-purity germanium single crystal, the tungsten filament electrode of surface wrap lithium silk is provided with above baffle plate, the position of the tungsten filament electrode and high-purity germanium single crystal endoporus position correspondence, pass through a lowering or hoisting gear between tungsten filament electrode and high-purity germanium single crystal：Tungsten filament electrode carries out relative motion along high-purity germanium single crystal endoporus above-below direction.The utility model is realized that tungsten filament electrode carries out relative motion along high-purity germanium single crystal endoporus direction, compared with prior art, after lithium silk enters endoporus, is evaporated the uniformity of internal surface of hole in germanium single crystal and significantly improved by lowering or hoisting gear.
Description
Technical field
Semiconductor radiation detector field, more particularly to a kind of high purity germanium detector are the utility model is related to, specifically
It is related to the HpGe deep hole lithium evaporation equipment of high purity germanium detector.
Background technology
In energetic gamma rays measurement process, coaxial HPGe detectors (high purity germanium detector) are optimal detectors,
Both there is outstanding energy resolution, there is higher detection efficient again.The sensitive volume of detector is bigger, to gamma-ray spy
It is higher to survey efficiency.With the development of nuclear industry, the requirement also more and more higher, thus need higher resolution to actinometry field
With the detector of detection efficient.
Mainly there are two during developing and producing coaxial HPGe detectors, the problem of most critical.First, it is monocrystalline
The purity of material.By semicentennial effort, the purification of germanium material and Crystal Growth Technique are successful.Second, it is system
Standby technique.Either N-type or p-type HPGe detectors, it is necessary to two contacts of N+ and P+ are prepared, if Fig. 1 is the coaxial HPGe of p-type
Panel detector structure figure, Fig. 2,3 are the coaxial HPGe panel detector structures figure of N-type.High-purity Germanium monocrystalline is already realized, thus prepares work
The quality of skill determines the performance of HPGe detectors.
Preparation technology essentially consists in the preparation of contact pole.The conventional boron ion of P+ contacts (11B) injection is completed, and N+ contacts are often adopted
With lithium (6Li) method of diffusion is made.The injection or evaporation of HpGe outer surface can realize good performance, but HpGe endoporus
More difficult, often there is the problem of uniformity difference.
When existing evaporation equipment is used for the evaporation of high purity germanium detector lithium, because tungsten electrode wire of its evaporation is fixed, and bottom
Plate is fixed, thus the lithium silk wound on tungsten electrode wire is often positioned over the surface of germanium single crystal, and is difficult to enter germanium crystal deep hole
Bottom, occur lithium evaporation germanium single crystal inner surface it is uniform low the problem of.
Utility model content
For the deficiency of above-mentioned technology, the purpose of this utility model is that the HpGe for providing a kind of high purity germanium detector is deep
Hole lithium evaporation equipment, to improve the uniformity of HpGe surface of deep hole lithium evaporation.
The technical problem that the utility model solves can be realized using following technical scheme：
The HpGe deep hole lithium evaporation equipment of high purity germanium detector, it is characterised in that high-purity on bottom plate including being arranged on
Germanium single crystal, is provided with transportable baffle plate above high-purity germanium single crystal, and surface wrap lithium silk is provided with above baffle plate
Tungsten filament electrode, the position of the tungsten filament electrode and high-purity germanium single crystal endoporus position correspondence, tungsten filament electrode and high-purity germanium single crystal it
Between pass through a lowering or hoisting gear：Tungsten filament electrode carries out relative motion along high-purity germanium single crystal endoporus above-below direction.
In one embodiment of the present utility model, the lowering or hoisting gear is connected with tungsten filament electrode, control tungsten filament electrode edge
High-purity germanium single crystal endoporus direction motion.
In one embodiment of the present utility model, the lowering or hoisting gear and high-purity germanium single crystal direct or indirect connection, control
Make high-purity germanium single crystal to move up and down so that carry out relative motion between high-purity germanium single crystal endoporus and tungsten filament electrode.
In one embodiment of the present utility model, the tungsten filament electrode is shaped as V-arrangement.
In one embodiment of the present utility model, the lowering or hoisting gear is Worm gear feed screw lift, or, the lifting
Device is cylinder lift, or the lowering or hoisting gear is by rotating valve transmission lift.
The utility model realizes that tungsten filament electrode carries out relative motion along high-purity germanium single crystal endoporus direction by lowering or hoisting gear,
Compared with prior art, after lithium silk enters deep hole, evaporate the uniformity of internal surface of hole in germanium single crystal and significantly improve.
The characteristics of the utility model, see this case schema and the following preferably detailed description of embodiment and obtain clear
Ground understands.
Brief description of the drawings
Fig. 1 is the coaxial HPGe panel detector structures figure of p-type；
Fig. 2 is the coaxial HPGe panel detector structures figure of N-type；
Fig. 3 is the coaxial another structure chart of HPGe detectors of N-type；
Fig. 4 is the schematic diagram of the utility model one embodiment；
Embodiment
In order that technological means, creation characteristic, reached purpose and effect that the utility model is realized are easy to understand, under
The utility model is expanded on further in face in conjunction with specific embodiments.
Referring to Fig. 4, the HpGe deep hole lithium evaporation equipment of high purity germanium detector, including high-purity germanium single crystal 1, tungsten filament electrode 2,
Lithium silk 3, baffle plate 4, bottom plate 5, lowering or hoisting gear 6.
High-purity germanium single crystal 1 is arranged on bottom plate 5, and the top of high-purity germanium single crystal 1 is provided with transportable baffle plate 4,
The top of baffle plate 4 is provided with the tungsten filament electrode 2 of surface wrap lithium silk 3, and tungsten filament electrode 2 is shaped as V-arrangement.The position of tungsten filament electrode 2
Put the endoporus position correspondence with high-purity germanium single crystal 1.
Lowering or hoisting gear 6 can select Worm gear feed screw lift, cylinder lift or other kinds of lowering or hoisting gear.Such as figure
Shown, in the present embodiment, lowering or hoisting gear 6 is connected with bottom plate 5, and bottom plate 5 is connected on lowering or hoisting gear 6, and passes through gear
Transmission device is connected on external knob, by rotating regulating base board 5, controls the lifting of high-purity germanium single crystal.With prior art phase
Than after lithium silk enters deep hole, the uniformity evaporated in germanium single crystal inner surface significantly improves.
Certainly, lowering or hoisting gear 6 can also be connected with tungsten filament electrode 2, control tungsten filament electrode along high-purity germanium single crystal endoporus direction
Motion.
The operating method of the HpGe deep hole lithium evaporation equipment of high purity germanium detector is as follows：
1st, by high-purity germanium single crystal 1, it is placed on the bottom plate 5 in evaporation bell jar.By lithium silkIt is wrapped in V-type
On tungsten filament electrode 2.
2nd, baffle plate 4 blocks high-purity germanium single crystal 1, and preheating evaporation electrode makes the silver-gray oxide removal in lithium surface, bright
When lithium occurs, flap shutter 4, by high-purity germanium single crystal 1 exposed to the lower section of tungsten filament electrode 2, continue to evaporate.
3rd, using lowering or hoisting gear 6, high-purity germanium single crystal 1 is moved up and down, now, lithium silk 3 can directly go deep into high-purity germanium single crystal 1
Inner surface, move up and down, ensure that the uniformity of inner surface lithium layer.
4th, after the completion of evaporating, increase the temperature to and diffusion is heated in the range of 280~400 DEG C, form the lithium layer of a floor height concentration.
It is below experiment of the checking germanium crystal inner surface lithium layer with property.
Two and identical two workpiece of crystalline size are processed with duralumin, respectively numbering a, b.
Two workpiece are radially cut into two parts along workpiece centre position respectively, and polishes, clean, dry, blend compounds band
Again bundle together.
During evaporation of lithium, a workpiece use machine reset condition, and lithium silk and germanium crystal are fixed, and lithium silk is located at germanium crystal
Surface.The equipment that b workpiece use the present embodiment, it is fixed that lithium silk be located at germanium crystal surface, by lowering or hoisting gear, up and down
Mobile germanium crystal.And ensure the uniformity of every other condition.
After evaporation terminates, argon gas is quickly poured, aluminium sample is taken out immediately, removes adhesive tape, is sprayed with deionized water or methanol
Severe degree caused by lithium evaporating surface, reference piece a and workpiece b bubbles.
(2Li+2H2O→2LiOH+H2↑)
Contrast finds that along hole from top to bottom, caused bubble is fewer and fewer for a workpiece lithium evaporating surfaces, is produced above deep hole acute
Strong bubble.And b workpiece lithium evaporating surfaces bubble produces uniform, severe degree no significant difference.
The advantages of general principle of the present utility model, principal character and the utility model has been shown and described above.One's own profession
The technical staff of industry is it should be appreciated that the utility model is not restricted to the described embodiments, described in above-described embodiment and specification
Simply principle of the present utility model, the utility model also has respectively on the premise of the spirit and scope of the utility model is not departed from
Kind changes and improvements, these changes and improvements are both fallen within claimed the scope of the utility model.The requires of the utility model
Protection domain defined by appended claims and its equivalent.
Claims (7)
1. the HpGe deep hole lithium evaporation equipment of high purity germanium detector, it is characterised in that including the HpGe being arranged on bottom plate
Monocrystalline, is provided with transportable baffle plate above high-purity germanium single crystal, and surface wrap lithium silk is provided with above baffle plate
Tungsten filament electrode, the position of the tungsten filament electrode and high-purity germanium single crystal endoporus position correspondence, between tungsten filament electrode and high-purity germanium single crystal
Pass through a lowering or hoisting gear：Tungsten filament electrode carries out relative motion along high-purity germanium single crystal endoporus direction.
2. the HpGe deep hole lithium evaporation equipment of high purity germanium detector as claimed in claim 1, it is characterised in that the lifting
Device and high-purity germanium single crystal direct or indirect connection, control high-purity germanium single crystal to move up and down so that high-purity germanium single crystal endoporus and tungsten
Relative motion is carried out between silk electrode.
3. the HpGe deep hole lithium evaporation equipment of high purity germanium detector as claimed in claim 1, it is characterised in that the lifting
Device is connected with the fixed plate of tungsten filament electrode, and control tungsten filament electrode moves along high-purity germanium single crystal endoporus direction.
4. the HpGe deep hole lithium evaporation equipment of high purity germanium detector as claimed in claim 1, it is characterised in that the tungsten filament
Electrode is shaped as V-arrangement.
5. the HpGe deep hole lithium evaporation equipment of high purity germanium detector as claimed in claim 1, it is characterised in that the lifting
Device is Worm gear feed screw lift.
6. the HpGe deep hole lithium evaporation equipment of high purity germanium detector as claimed in claim 1, it is characterised in that the lifting
Device is cylinder lift.
7. the HpGe deep hole lithium evaporation equipment of high purity germanium detector as claimed in claim 1, it is characterised in that the lifting
Device is driven lift by rotating valve.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621237021.6U CN206680565U (en) | 2016-11-18 | 2016-11-18 | The HpGe deep hole lithium evaporation equipment of high purity germanium detector |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621237021.6U CN206680565U (en) | 2016-11-18 | 2016-11-18 | The HpGe deep hole lithium evaporation equipment of high purity germanium detector |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN206680565U true CN206680565U (en) | 2017-11-28 |
Family
ID=60395501
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201621237021.6U Active CN206680565U (en) | 2016-11-18 | 2016-11-18 | The HpGe deep hole lithium evaporation equipment of high purity germanium detector |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN206680565U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112713221A (en) * | 2020-12-31 | 2021-04-27 | 中国原子能科学研究院 | Surface protection method for high-purity germanium detector |
| CN116024535A (en) * | 2023-03-28 | 2023-04-28 | 苏州浪潮智能科技有限公司 | Method and equipment for preparing radiation film, radiation film and optical device |
-
2016
- 2016-11-18 CN CN201621237021.6U patent/CN206680565U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112713221A (en) * | 2020-12-31 | 2021-04-27 | 中国原子能科学研究院 | Surface protection method for high-purity germanium detector |
| CN116024535A (en) * | 2023-03-28 | 2023-04-28 | 苏州浪潮智能科技有限公司 | Method and equipment for preparing radiation film, radiation film and optical device |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CP03 | Change of name, title or address |
Address after: Zone A, Building 3, No. 1411 Yecheng Road, Jiading District, Shanghai, 201821 Patentee after: Shanghai xinman Sensor Technology Co.,Ltd. Address before: 201821 area a, building 3, No. 1411, Yecheng Road, Jiading Industrial Zone, Jiading District, Shanghai Patentee before: SIM MAX TECHNOLOGY Co.,Ltd. |
|
| CP03 | Change of name, title or address |