CN112713102A - Pattern alignment detection method - Google Patents
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- CN112713102A CN112713102A CN201911026011.6A CN201911026011A CN112713102A CN 112713102 A CN112713102 A CN 112713102A CN 201911026011 A CN201911026011 A CN 201911026011A CN 112713102 A CN112713102 A CN 112713102A
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- 238000001514 detection method Methods 0.000 title claims abstract description 54
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 34
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 34
- 239000010703 silicon Substances 0.000 claims abstract description 34
- 238000007650 screen-printing Methods 0.000 claims abstract description 14
- 238000000034 method Methods 0.000 claims abstract description 10
- 238000007639 printing Methods 0.000 claims description 12
- 230000003287 optical effect Effects 0.000 claims description 11
- 238000006073 displacement reaction Methods 0.000 claims description 8
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 238000012544 monitoring process Methods 0.000 abstract description 3
- 230000007547 defect Effects 0.000 abstract description 2
- 235000012431 wafers Nutrition 0.000 description 30
- 239000003550 marker Substances 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000003475 lamination Methods 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000004070 electrodeposition Methods 0.000 description 1
- 238000003698 laser cutting Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/544—Marks applied to semiconductor devices or parts, e.g. registration marks, alignment structures, wafer maps
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/544—Marks applied to semiconductor devices or parts
- H01L2223/54426—Marks applied to semiconductor devices or parts for alignment
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- Condensed Matter Physics & Semiconductors (AREA)
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Abstract
The invention belongs to the technical field of solar cells, and discloses a pattern alignment detection method for detecting alignment accuracy of a first pattern and a second pattern which are respectively arranged on the front side and the back side of an object to be detected. The pattern alignment detection method provided by the invention can be used for detecting and obtaining the alignment deviation of the electrode patterns or the laser nicks on the front side and the back side of the laminated cell silicon wafer, and realizing the online monitoring of the pattern deviation on the front side and the back side of the laminated cell silicon wafer, so that the operation precision of the processes of silk-screen printing or laser grooving and the like of the cell can be monitored and alarmed, operators can be reminded to adjust and improve in time, and the defects and the assembly reliability risks in the cell manufacturing process are greatly reduced.
Description
Technical Field
The invention relates to the technical field of solar cells, in particular to a pattern alignment detection method.
Background
The laminated solar cell module is formed by cutting a whole cell into small pieces through laser cutting, and then mutually bonding the positive and negative electrodes of the cut small cell pieces through conductive adhesive to form a cell string. Under the same area, compared with the traditional solar cell module, the laminated solar cell module can be used for placing more than 6 percent of cells, so that the effective power generation area is increased.
In the production process of the laminated solar cell module, the lamination alignment of each cell is a key factor for improving the photoelectric conversion power and the reliability of the module, and the requirement on the pattern alignment precision of the front surface and the back surface of the laminated cell is higher and higher as the lamination distance of the laminated solar cell module is smaller and smaller. However, at present, there is no detection means for detecting the alignment accuracy of the front and back electrode patterns of the stack cell in the metallization process.
Disclosure of Invention
The invention aims to provide a pattern alignment detection method which can be used for detecting the alignment accuracy of front and back electrode patterns of a laminated cell in a metallization process stage.
In order to achieve the purpose, the invention adopts the following technical scheme: a pattern alignment detection method comprises the following steps:
forming a first graph and a first mark on the front surface of a measured object;
forming a second pattern and a second mark on the back of the object to be tested;
respectively arranging a first reference coordinate system and a second reference coordinate system on the front side and the back side of a detection area, and aligning the first reference coordinate system with the second reference coordinate system;
placing the measured object in a detection area, and respectively obtaining a first coordinate parameter of the first identifier in the first reference coordinate system and a second coordinate parameter of the second identifier in the second reference coordinate system;
and comparing the first coordinate parameter with the second coordinate parameter to judge whether the first graph and the second graph are aligned.
Preferably, the first graph and the first mark are formed by one-time printing through a first screen printing plate; the second graph and the second mark are formed by one-time printing through a second screen printing plate.
Preferably, the first marker and the second marker each comprise at least three discrete marker points.
Preferably, the mark points of the first mark are distributed in a central symmetry manner by using the central point of the first graph; and/or the mark points of the second mark are distributed in a central symmetry way by the central point of the second graph.
Preferably, the mark points are circular, cross-shaped or polygonal.
Preferably, the object to be measured is a silicon wafer, and the first pattern and the second pattern are laser scoring patterns or electrode patterns.
Preferably, the setting a first reference coordinate system and a second reference coordinate system on the front and the back of the detection area, respectively, and aligning the first reference coordinate system with the second reference coordinate system includes:
the method comprises the steps that a first camera is arranged above the front face of a detection area, a second camera is arranged below the back face of the detection area, a transparent or semitransparent calibration sheet is arranged in the detection area, and a calibration graph is arranged on the calibration sheet, so that the optical axes of the first camera and the second camera are respectively aligned with the central point of the calibration graph.
Preferably, the setting a first reference coordinate system and a second reference coordinate system on the front and the back of the detection area, respectively, and aligning the first reference coordinate system with the second reference coordinate system further includes:
acquiring a first calibration deviation parameter of an optical axis of the first camera and a central point of the calibration graph;
acquiring a second calibration deviation parameter of the optical axis of the second camera and the central point of the calibration graph;
and when judging whether the first graph and the second graph are aligned, substituting the first calibration deviation parameter and the second calibration deviation parameter into the first coordinate parameter and the second coordinate parameter respectively.
Preferably, the step of comparing the first coordinate parameter with the second coordinate parameter to determine whether the first pattern and the second pattern are aligned includes:
and calculating the alignment deviation parameters of the first graph and the second graph through the first coordinate parameter and the second coordinate parameter to judge whether the alignment deviation parameters are in a preset allowable deviation range, so that the measured object can be screened.
Preferably, the alignment deviation parameter includes a horizontal displacement deviation Δ x, a vertical displacement deviation Δ y, and a rotation angle deviation Δ θ between the first pattern and the second pattern.
The invention has the beneficial effects that:
1. the pattern alignment detection method provided by the invention can be used for detecting and obtaining the alignment deviation of the electrode patterns or the laser nicks on the front side and the back side of the laminated cell silicon wafer, and realizing the online monitoring of the pattern deviation on the front side and the back side of the laminated cell silicon wafer, so that the operation precision of the processes of silk-screen printing or laser grooving and the like of the cell can be monitored and alarmed, operators can be reminded to adjust and improve in time, and the defects and the assembly reliability risks in the cell manufacturing process are greatly reduced.
2. The overlay deviation parameters of the electrode patterns or the laser nicks on the front and the back of the laminated cell silicon wafer obtained by the pattern overlay detection method provided by the invention are substituted into the overlay compensation before the front electrode and the back electrode are printed or laser grooving is carried out, so that the printing and laser grooving operation precision can be improved.
3. The pattern alignment detection method provided by the invention can be used for simultaneously taking images of the front side and the back side of the laminated tile battery silicon wafer, and is short in detection time and high in efficiency.
Drawings
FIG. 1 is a schematic flow chart illustrating a pattern alignment detection method according to an embodiment of the present invention;
FIG. 2 is a schematic structural view of a detecting mechanism in the embodiment of the present invention;
FIG. 3 is a schematic view of a configuration of a calibration sheet placed on a detection mechanism in an embodiment of the present invention;
FIG. 4 is a top view of a silicon wafer placed on a detection mechanism in an embodiment of the present invention;
FIG. 5 is a bottom view of a silicon cell plate placed on a detection mechanism in an embodiment of the present invention.
In the figure:
1. a silicon wafer; 2. a conveyor belt; 3. a first camera; 4. a second camera; 5. a calibration sheet;
10. a first identifier; 20. a second identifier; 30. and (6) calibrating the pattern.
Detailed Description
The present invention will be described in further detail with reference to the accompanying drawings and examples. It is to be understood that the specific embodiments described herein are merely illustrative of the invention and are not limiting of the invention. It should be further noted that, for the convenience of description, only some of the structures related to the present invention are shown in the drawings, not all of the structures.
In the description of the present invention, unless expressly stated or limited otherwise, the terms "connected," "connected," and "fixed" are to be construed broadly, e.g., as meaning permanently connected, removably connected, or integral to one another; can be mechanically or electrically connected; either directly or indirectly through intervening media, either internally or in any other relationship. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.
In the present invention, unless otherwise expressly stated or limited, "above" or "below" a first feature means that the first and second features are in direct contact, or that the first and second features are not in direct contact but are in contact with each other via another feature therebetween. Also, the first feature being "on," "above" and "over" the second feature includes the first feature being directly on and obliquely above the second feature, or merely indicating that the first feature is at a higher level than the second feature. A first feature being "under," "below," and "beneath" a second feature includes the first feature being directly under and obliquely below the second feature, or simply meaning that the first feature is at a lesser elevation than the second feature.
In the description of the present embodiment, the terms "upper", "lower", "right", etc. are used in an orientation or positional relationship based on that shown in the drawings only for convenience of description and simplicity of operation, and do not indicate or imply that the device or element referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be construed as limiting the present invention. Furthermore, the terms "first" and "second" are used only for descriptive purposes and are not intended to have a special meaning.
The embodiment provides a pattern alignment detection method for detecting alignment accuracy of a first pattern and a second pattern respectively arranged on a front surface and a back surface of an object to be detected. The method will be described in detail below by taking the detection of the electrode patterns on the front and back surfaces of the solar cell silicon wafer 1 as an example. Specifically, the pattern alignment detection method comprises the following steps:
s1: a first pattern and a first mark 10 associated with the position of the first pattern are formed on the front side of the object to be measured. That is, a plurality of printing marks may be provided on the first screen for printing the electrodes on the front surface of the silicon wafer 1, so that the first mark 10 including a plurality of mark points associated with the position of the front electrode position pattern may be formed on the front surface of the silicon wafer 1 after the front surface of the silicon wafer 1 is printed using the first screen. It will be appreciated that to determine the exact position of a planar figure within another plane, at least three discrete marking points associated with the position of the planar figure need to be taken as reference points. For convenience of description, the printing mark in this embodiment is preferably four mark points that are distributed in a central symmetry manner with the central point of the front electrode pattern, a redundant mark point of the four mark points may be used as a substitute mark point when the respective mark point is not printed, and the redundant mark point may also be suitable for subsequent parameter calculation and check, so as to improve the detection accuracy.
S2: a second pattern and a second identifier 20 associated with the position of the second pattern are formed on the back of the object to be tested. Similarly to step S1, a plurality of printing marks are provided on the second screen printing plate for printing the electrodes on the back surface of the silicon wafer 1, so that after the front surface of the silicon wafer 1 is printed by using the first screen printing plate, four mark points are formed on the front surface of the silicon wafer 1, wherein the four mark points are symmetrically distributed around the center point of the back electrode pattern.
S3: and respectively arranging a first reference coordinate system and a second reference coordinate system on the front side and the back side of the detection area, and aligning the first reference coordinate system with the second reference coordinate system. The detection area may be a detection table or a conveyor belt 2 of a fixed or rotary detection mechanism (see fig. 2), for example, a detection table having a hollow structure and capable of placing the silicon wafer 1 thereon, a conveyor belt 2 having a pair of belts disposed at an interval, or the like. Taking the example of placing the silicon wafer 1 to be detected on a pair of belts arranged at an interval as shown in fig. 2, a first camera 3 and a second camera 4 which view toward the middle area of the two belts are respectively arranged on the upper and lower sides of the belts, so as to form a first reference coordinate system and a second reference coordinate system based on the images acquired by the first camera 3 and the second camera 4. The first reference coordinate system and the second reference coordinate system may be calibrated by placing a transparent or translucent calibration sheet 5 (see fig. 2 and 3) on the detection area of the belt, and setting a calibration pattern 30 on the calibration sheet 5, which does not correspond to the position of the belt, so that the first reference coordinate system and the second reference coordinate system can be aligned by aligning the optical axes of the first camera 3 and the second camera 4 with the center point of the calibration pattern 30.
S4: and placing the object to be measured in a detection area, respectively obtaining a first coordinate parameter of the first identifier 10 in the first reference coordinate system and a second coordinate parameter of the second identifier 20 in the second reference coordinate system, and comparing the first coordinate parameter with the second coordinate parameter to judge the alignment accuracy of the first graph and the second graph. Referring to fig. 4, the first actual coordinate parameter of the first reference coordinate system of the center positions of the four mark points can be obtained by calculating the image of the first mark 10 on the front surface of the silicon wafer 1 captured by the first camera 3. Similarly, referring to fig. 5, the second actual coordinate parameter of the second reference coordinate system at the center positions of the four mark points constituting the second mark 20 can be obtained by calculating from the image of the second mark 20 on the back surface of the silicon wafer 1 captured by the second camera 4. Since the first mark 10 and the second mark 20 are respectively associated with the positions of the first pattern and the second pattern, the first actual coordinate parameter and the second actual coordinate parameter can reflect the actual positions of the first pattern and the second pattern equally, the alignment deviation parameter of the first pattern and the second pattern can be obtained by comparing and calculating the first actual coordinate parameter and the second actual coordinate parameter, the alignment deviation parameter can specifically include the horizontal displacement deviation Δ x, the vertical displacement deviation Δ y and the rotation angle deviation Δ θ between the first pattern and the second pattern, and the alignment deviation parameter directly reflects the alignment accuracy of the front electrode pattern and the back electrode pattern of the silicon wafer 1. The horizontal displacement deviation delta x, the vertical displacement deviation delta y and the rotation angle deviation delta theta between the first graph and the second graph are substituted into the alignment compensation before the front electrode and the back electrode are printed, so that the printing precision can be improved. In addition, by judging whether the alignment deviation parameter is within a preset allowable deviation range, the silicon wafers 1 in batches can be screened to distinguish qualified products from unqualified products. In view of the prior art in the field of measuring and calculating methods and device graphic detection, such as analyzing a positioning mark by an image, generating a reference coordinate system by sampling the positioning mark, calculating a coordinate parameter of the mark, and the like, there are many documents and commercially available devices for reference, and details are not repeated herein.
When the spatial positions of the first camera 3 and the second camera 4 are adjusted to be aligned correspondingly, an alignment deviation which is difficult to eliminate exists between the first reference coordinate system and the second reference coordinate system inevitably due to errors of mechanical structures such as a slide rail or a motor for bearing the first camera 3 and the second camera 4. Therefore, the pattern alignment detection method may further include:
s301, a first calibration deviation parameter of the optical axis of the first camera 3 and the center point of the calibration pattern 30 is obtained.
S302, a second calibration deviation parameter of the optical axis of the second camera 4 and the central point of the calibration graph 30 is obtained.
And S401, respectively substituting the first calibration deviation parameter and the second calibration deviation parameter into the first coordinate parameter and the second coordinate parameter when judging the alignment precision of the first graph and the second graph.
Specifically, the manner of obtaining the first calibration deviation parameter may refer to the manner of calculating the first actual coordinate parameter and the second actual coordinate parameter. For example, a calibration dot array (see fig. 3) may be set on the calibration sheet 5, four discrete calibration dots are arbitrarily selected as the calibration pattern 30, the optical axes (view center points) of the first camera 3 and the second camera 4 are respectively tried to be made to correspond to the center points of the four discrete calibration dots, and a first calibration deviation parameter and a second calibration deviation parameter of the optical axes of the first camera 3 and the second camera 4 and the center point of the calibration pattern 30 after final calibration and debugging are obtained, so that the first calibration deviation parameter and the second calibration deviation parameter are substituted into the first coordinate parameter and the second coordinate parameter, and then the alignment accuracy of the first pattern and the second pattern is conveniently determined.
In this embodiment, the mark points of the first mark 10 and the second mark 20 may be circular, cross-shaped, polygonal or other feature patterns, and the width of the line of the feature pattern may be less than 0.1mm, so that the influence of the first mark 10 and the second mark 20 on the light receiving area of the battery in the subsequent service process of the battery cell is almost negligible, and the actual photoelectric conversion efficiency of the battery is not affected. The first screen printing plate and the second screen printing plate for forming the first mark 10 and the second mark 20 on the front surface and the back surface of the silicon wafer can be applied to screen printing equipment instead of a conventional screen printing plate, so that the pattern offset monitoring of the silicon wafer after electrode printing is facilitated.
In addition, in the production process of the laminated solar cell module, after the passivation of the silicon wafer 1 and before the screen printing of the silicon wafer 1, the passivation layer of the silicon wafer 1 needs to be grooved by laser, and the aluminum oxide and silicon nitride film layers at the grooved part are removed, so that the electrode subsequently filling the grooved area is in good contact with the silicon wafer 1. The laser grooving is carried out according to a specific pattern consistent with an electrode pattern to be printed on the silicon wafer 1, and after the laser grooving is completed on the silicon wafer 1, the grooving patterns on the front side and the back side of the silicon wafer 1 directly influence whether a front side electrode can correspond to a back side electrode pattern after a subsequent screen printing process is completed. Therefore, the pattern alignment detection method provided by the embodiment is also suitable for the alignment precision detection of the laser scored patterns on the front surface and the back surface of the silicon wafer 1.
It should be understood that the above-described embodiments of the present invention are merely examples for clearly illustrating the present invention, and are not intended to limit the embodiments of the present invention. Numerous obvious variations, adaptations and substitutions will occur to those skilled in the art without departing from the scope of the invention. And are neither required nor exhaustive of all embodiments. Any modification, equivalent replacement, and improvement made within the spirit and principle of the present invention should be included in the protection scope of the claims of the present invention.
Claims (10)
1. A pattern alignment detection method is characterized by comprising the following steps:
forming a first pattern and a first mark (10) on the front surface of an object to be measured;
forming a second pattern and a second mark (20) on the back of the object to be tested;
respectively arranging a first reference coordinate system and a second reference coordinate system on the front side and the back side of a detection area, and aligning the first reference coordinate system with the second reference coordinate system;
placing the object to be measured in a detection area, and respectively acquiring a first coordinate parameter of the first identifier (10) in the first reference coordinate system and a second coordinate parameter of the second identifier (20) in the second reference coordinate system;
and comparing the first coordinate parameter with the second coordinate parameter to judge whether the first graph and the second graph are aligned.
2. The pattern alignment detection method according to claim 1, wherein the first pattern and the first mark (10) are formed by one-time printing through a first screen printing plate; the second graph and the second mark (20) are formed by one-time printing through a second screen printing plate.
3. The graphic registration detection method according to claim 1, wherein the first mark (10) and the second mark (20) each comprise at least three discrete marking points.
4. The pattern alignment detection method according to claim 3, wherein the mark points of the first mark (10) are distributed in a central symmetry manner with respect to a center point of the first pattern; and/or
The mark points of the second mark (20) are distributed in a central symmetry way by the central point of the second graph.
5. The pattern alignment detection method according to claim 3, wherein the mark points are circular, cross-shaped or polygonal.
6. The pattern alignment detection method according to claim 1, wherein the object to be detected is a silicon wafer (1), and the first pattern and the second pattern are laser scribing patterns or electrode patterns.
7. The pattern alignment detection method according to claim 1, wherein the providing a first reference coordinate system and a second reference coordinate system on the front and the back of the detection area, respectively, and the aligning the first reference coordinate system with the second reference coordinate system comprises:
the camera calibration system is characterized in that a first camera (3) is arranged above the front face of a detection area, a second camera (4) is arranged below the back face of the detection area, a transparent or semitransparent calibration sheet (4) is arranged in the detection area, a calibration graph (30) is arranged on the calibration sheet (4), and the optical axes of the first camera (3) and the second camera (4) are respectively aligned with the central point of the calibration graph (30).
8. The pattern alignment detection method according to claim 7, wherein the providing a first reference coordinate system and a second reference coordinate system on the front and the back of the detection area, respectively, and aligning the first reference coordinate system with the second reference coordinate system further comprises:
acquiring a first calibration deviation parameter of the optical axis of the first camera (3) and the central point of the calibration graph (30);
acquiring a second calibration deviation parameter of the optical axis of the second camera (4) from the center point of the calibration pattern (30);
and when judging whether the first graph and the second graph are aligned, substituting the first calibration deviation parameter and the second calibration deviation parameter into the first coordinate parameter and the second coordinate parameter respectively.
9. The method of claim 1, wherein comparing the first coordinate parameter with the second coordinate parameter to determine whether the first pattern and the second pattern are aligned comprises:
and calculating the alignment deviation parameters of the first graph and the second graph through the first coordinate parameter and the second coordinate parameter to judge whether the alignment deviation parameters are in a preset allowable deviation range, so that the measured object can be screened.
10. The pattern registration detection method according to claim 9, wherein the registration deviation parameters include a horizontal displacement deviation Δ x, a vertical displacement deviation Δ y, and a rotation angle deviation Δ θ between the first pattern and the second pattern.
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| CN115799140B (en) * | 2022-07-20 | 2023-12-01 | 拓荆键科(海宁)半导体设备有限公司 | Calibration method and device, combined microscope and wafer bonding method |
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