CN112702019A - Anti-irradiation differential crystal oscillator - Google Patents
Anti-irradiation differential crystal oscillator Download PDFInfo
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- CN112702019A CN112702019A CN202011589126.9A CN202011589126A CN112702019A CN 112702019 A CN112702019 A CN 112702019A CN 202011589126 A CN202011589126 A CN 202011589126A CN 112702019 A CN112702019 A CN 112702019A
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Abstract
The invention relates to an anti-irradiation differential crystal oscillator, comprising: the device comprises a base, an anti-radiation differential chip, a quartz vibrator and a metal cover plate; the base is provided with an accommodating cavity, and the top of the base is provided with an opening; the anti-radiation differential chip is electrically connected with a bonding pad at the bottom of the accommodating cavity and is used for being matched with the quartz oscillator to generate an oscillation circuit, carrying out temperature compensation calculation on the quartz oscillator and finally outputting a high-frequency differential signal; the quartz oscillator is arranged above the anti-radiation differential chip and is used for being matched with the anti-radiation differential chip to generate an oscillation circuit; the metal cover plate covers the opening at the top of the base. The invention solves the problem that the frequency stability of the traditional differential crystal oscillator in the wide temperature range of-55 ℃ to +125 ℃ is less than or equal to +/-50 ppm, realizes the index of the crystal oscillator in the wide temperature range of-55 ℃ to +125 ℃ that the frequency stability is less than or equal to +/-50 ppm by optimizing the structure and the debugging method of the product, and realizes the SMD7050 external dimension of the product through the design of miniaturization and integration.
Description
Technical Field
The invention relates to the field of design of oscillators, in particular to an anti-irradiation differential crystal oscillator.
Background
With the wide application of the anti-radiation differential crystal oscillator in electronic equipment, higher requirements are provided for the differential crystal oscillator in the aspects of volume, temperature, frequency temperature stability and the like, so that the crystal oscillator needs to be designed in the aspects of miniaturization and anti-radiation, the miniaturization and high-index characteristics of products are realized, and the relevant requirements of the electronic equipment are met.
The traditional differential crystal oscillator requires a product to meet the requirements that the frequency stability is less than or equal to plus or minus 50ppm within the temperature range of minus 40 ℃ to plus 85 ℃ and the frequency stability is less than or equal to plus or minus 50ppm within the wide temperature range of minus 55 ℃ to plus 125 ℃ in a working environment, so that the requirement of a differential crystal oscillator under the wide temperature condition cannot be met.
In addition, in order to meet the requirements of high stability of the differential crystal oscillator product under a wide temperature condition and the miniaturization of the product, the product must be designed in terms of miniaturization and radiation resistance.
Disclosure of Invention
The invention aims to design an anti-irradiation differential crystal oscillator, which solves the problem that the frequency stability of the traditional differential crystal oscillator in a wide temperature range of-55 ℃ to +125 ℃ cannot be less than or equal to +/-50 ppm, realizes the index of the crystal oscillator in the wide temperature range of-55 ℃ to +125 ℃ that the frequency stability is less than or equal to +/-50 ppm by optimizing the structure and the debugging method of a product, and realizes the SMD7050 external dimension of the product through the miniaturization and integration design.
The technical scheme for solving the technical problems is as follows:
an irradiation tolerant differential crystal oscillator comprising: the device comprises a base, an anti-radiation differential chip, a quartz vibrator and a metal cover plate;
the base is provided with an accommodating cavity, and the top of the base is provided with an opening;
the anti-radiation differential chip is electrically connected with a bonding pad at the bottom of the accommodating cavity and is used for being matched with the quartz oscillator to generate an oscillation circuit, performing temperature compensation calculation on the quartz oscillator and finally outputting a high-frequency differential signal;
the quartz oscillator is arranged above the anti-radiation differential chip and is used for being matched with the anti-radiation differential chip to generate an oscillation circuit;
the metal cover plate covers the opening at the top of the base.
On the basis of the technical scheme, the invention can be further improved as follows.
Further, the base is made of ceramic materials.
Further, the quartz resonator includes: a quartz wafer and a gold electrode plated onto the quartz wafer by a plating process.
Further, the coating process is a high vacuum ion beam sputtering coating process.
Further, the quartz wafer is fixed on the inner wall of the containing cavity through conductive glue.
Furthermore, the pins of the radiation-resistant differential chip are electrically connected with the bonding pads at the bottom of the accommodating cavity in a gold wire bonding mode.
Further, the radiation-resistant differential chip is fixedly connected to the bottom of the accommodating cavity through conductive glue.
Further, the metal cover plate is welded to the opening at the top of the base by a parallel welding packaging technology.
The invention has the beneficial effects that:
the problem that the frequency stability of the traditional differential crystal oscillator in a wide temperature range of-55 ℃ to +125 ℃ cannot be less than or equal to +/-50 ppm is solved, the index that the frequency stability of the crystal oscillator in the wide temperature range of-55 ℃ to +125 ℃ is less than or equal to +/-50 ppm is realized by optimizing the structure and the debugging method of the product, and the SMD7050 external dimension of the product is realized by miniaturization and integration design.
Drawings
Fig. 1 and 2 are a side view and a top view, respectively, of an irradiation-resistant differential crystal oscillator according to an embodiment of the present invention;
fig. 3 is a schematic diagram of a pin arrangement of a submount pad according to an embodiment of the invention.
101, a base; 102. an anti-irradiation differential chip; 103. a quartz wafer; 104. a gold electrode; 105. and a metal cover plate.
Detailed Description
The principles and features of this invention are described below in conjunction with the following drawings, which are set forth by way of illustration only and are not intended to limit the scope of the invention.
Fig. 1 and 2 are a side view and a top view, respectively, of an irradiation-resistant differential crystal oscillator according to an embodiment of the present invention, and as shown in fig. 1 and 2, the apparatus includes: the device comprises a base 101, an anti-radiation differential chip 102, a quartz resonator and a metal cover plate 105, wherein the quartz resonator comprises a quartz wafer 103 and a gold electrode 104.
The base 101 may be a ceramic base made of a ceramic material, and has a cavity for accommodating the radiation-resistant differential chip 102, the quartz resonator, and the metal cover plate 105, and has an open top, and electrically connects the parts and provides a final input/output port, and a pad is disposed at the bottom of the base 101, and each pin of the pad is as shown in fig. 3, where pins 1 and 2 are defined as empty, pin 3 is defined as ground, pin 4 is defined as + output, pin 5 is defined as-output, and pin 6 is defined as power.
The anti-radiation differential chip 102 is used for being matched with the quartz oscillator to generate an oscillation circuit, performing temperature compensation calculation on the quartz oscillator, and finally outputting a high-frequency differential signal. In order to realize the microminiaturization of the quartz resonator, the integrated design is adopted for each part of the circuit, and the differential output circuit is composed of an oscillating circuit, a phase-locked loop (PLL) circuit and an LVDS differential output circuit. The oscillation circuit is a starting oscillation circuit of the resonator and has the function of enabling the resonator to work at a fundamental frequency; the output signal of the oscillating circuit is connected to a phase-locked frequency doubling circuit, and a target frequency signal is output in a phase-locked frequency doubling mode, but the frequency signal is a CMOS square wave signal generated by a VCO (voltage controlled oscillator); the CMOS square wave signal generated by the phase-locked frequency doubling circuit is connected to the LVDS differential output circuit, and the final LVDS signal is output through level form conversion. By matching with the quartz vibrator, the crystal oscillator can realize the index of the frequency stability of less than or equal to +/-50 ppm within the wide temperature range of minus 55 ℃ to plus 125 ℃. And the total dose irradiation resistance of the chip is realized through irradiation resistance reinforcement: not less than 100krad (Si); single event SEL resistance: LET: not less than 75MeV cm 2/mg.
The quartz wafer 103 is plated with a gold electrode 104, and based on the piezoelectric effect, an alternating voltage is applied between two electrode plates of the quartz wafer 103, so that mechanical deformation vibration is correspondingly generated, and meanwhile, the mechanical deformation vibration generates an alternating electric field. When the frequency of the applied alternating electric field is equal to the natural frequency of the wafer (depending on the size of the wafer, the cutting orientation, etc.), the amplitude of the mechanical vibrations will increase sharply, i.e. a piezoelectric resonance is created. When the wafer is in a resonance state, the equivalent impedance of the wafer is the minimum, and the wafer is used for being matched with the anti-irradiation differential chip 102 to generate an oscillation loop so as to achieve the purpose of stably outputting oscillation frequency. The quartz wafer 103 is designed in a microminiaturized strip shape, the frequency temperature stability characteristic of the quartz vibrator 103 is optimized by adjusting the cutting angle of the wafer, so that the quartz vibrator is better matched with the compensation algorithm curve of the anti-radiation differential chip 102, the frequency jump variable of the quartz vibrator generated along with the temperature change is reduced by adjusting the width-thickness ratio of the wafer, and the frequency temperature stability characteristic of the product is optimized.
The gold electrode 104 is used as an electrode of the quartz wafer 103 and is fabricated as a quartz resonator. The traditional evaporation coating method has the disadvantages that the adhesion force of an electrode film layer is poor, the stress in the electrode film and between the electrode film and a wafer is large, and the aging rate of a product is influenced. Through adopting high vacuum ion beam sputtering coating film, it is higher than traditional evaporation coating film vacuum degree, improved the coating film firmness, reduced rete stress for the rete adhesive force of the electrode film on wafer surface reinforcing, stress reduction have improved the long-term stability of product, make the aging properties of product better. By adopting ion etching fine adjustment, namely, by adopting a small amount of ion beams to etch the electrode material, the frequency is adjusted in a micro-scale manner, and the etching fine adjustment can avoid the adhesive force and the film stress caused by secondary evaporation, thereby reducing the aging rate of the product.
The metal cover plate 105 is used to seal with the ceramic base plate to form the outer package of the product. In the traditional parallel welding sealing of nitrogen filling, the content of water vapor in the product is relatively large, and the water vapor in the product causes the electrode to be slowly oxidized to cause frequency drift, namely frequency change. The high-vacuum parallel welding seal is adopted, so that the content of water vapor in the product is reduced to zero, the influence of the water vapor and other gases in the product on the aging rate is eliminated, and the aging rate of the product is reduced by adopting a high-vacuum packaging mode.
Alternatively, in this embodiment, the quartz wafer 103 is fixed to the inner wall of the accommodating chamber by conductive adhesive bonding.
Optionally, in this embodiment, the leads of the radiation-resistant differential chip 102 are electrically connected to the bonding pads at the bottom of the receiving cavity by means of gold wire bonding.
Optionally, in this embodiment, the radiation-resistant differential chip 102 is fixed to the bottom of the accommodating cavity by conductive glue bonding.
The irradiation-resistant differential crystal oscillator provided by the embodiment of the invention has the packaging form of SMD7050, the external dimension is (7.0mm +/-0.2 mm) x (5.0mm +/-0.2 mm) x (2.0mm (max)), and the frequency temperature stability can reach a range of minus 55 ℃ to plus 125 ℃ which is better than +/-50 ppm, so that the requirements of electronic equipment on miniaturization and irradiation resistance of the differential crystal oscillator are met.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents, improvements and the like that fall within the spirit and principle of the present invention are intended to be included therein.
Claims (8)
1. An irradiation tolerant differential crystal oscillator comprising: the device comprises a base, an anti-radiation differential chip, a quartz vibrator and a metal cover plate;
the base is provided with an accommodating cavity, and the top of the base is provided with an opening;
the anti-radiation differential chip is electrically connected with a bonding pad at the bottom of the accommodating cavity and is used for being matched with the quartz oscillator to generate an oscillation circuit, performing temperature compensation calculation on the quartz oscillator and finally outputting a high-frequency differential signal;
the quartz oscillator is arranged above the anti-radiation differential chip and is used for being matched with the anti-radiation differential chip to generate an oscillation circuit;
the metal cover plate covers the opening at the top of the base.
2. The differential crystal oscillator of claim 1, wherein the base is made of a ceramic material.
3. The radiation-resistant differential crystal oscillator of claim 1, wherein the quartz resonator comprises: a quartz wafer and a gold electrode plated onto the quartz wafer by a plating process.
4. The differential crystal oscillator of claim 3, wherein the coating process is a high vacuum ion beam sputter coating process.
5. The radiation-resistant differential crystal oscillator according to claim 3 or 4, wherein the quartz wafer is fixed to the inner wall of the accommodating chamber by conductive adhesive bonding.
6. The differential crystal oscillator of claim 1, wherein the leads of the radiation-resistant differential chip are electrically connected to the bonding pads at the bottom of the accommodating cavity by means of gold wire bonding.
7. The differential crystal oscillator of claim 1, wherein the radiation-resistant differential chip is adhesively secured to the bottom of the receiving cavity by conductive glue.
8. The radiation tolerant differential crystal oscillator of claim 1, wherein said metal cover plate is welded to said opening in the top of said base by a parallel weld packaging technique.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011589126.9A CN112702019A (en) | 2020-12-29 | 2020-12-29 | Anti-irradiation differential crystal oscillator |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202011589126.9A CN112702019A (en) | 2020-12-29 | 2020-12-29 | Anti-irradiation differential crystal oscillator |
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| CN112702019A true CN112702019A (en) | 2021-04-23 |
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| CN202011589126.9A Pending CN112702019A (en) | 2020-12-29 | 2020-12-29 | Anti-irradiation differential crystal oscillator |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000077941A (en) * | 1998-08-31 | 2000-03-14 | Kyocera Corp | Temperature compensated quartz oscillator and its manufacture |
| CN109672407A (en) * | 2018-12-20 | 2019-04-23 | 北京无线电计量测试研究所 | A kind of temperature compensating crystal oscillator |
| CN111064445A (en) * | 2019-12-24 | 2020-04-24 | 北京无线电计量测试研究所 | Anti-irradiation differential output oscillation chip |
| CN111641389A (en) * | 2020-05-13 | 2020-09-08 | 北京无线电计量测试研究所 | Surface-mounted temperature compensation crystal oscillator design method |
-
2020
- 2020-12-29 CN CN202011589126.9A patent/CN112702019A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000077941A (en) * | 1998-08-31 | 2000-03-14 | Kyocera Corp | Temperature compensated quartz oscillator and its manufacture |
| CN109672407A (en) * | 2018-12-20 | 2019-04-23 | 北京无线电计量测试研究所 | A kind of temperature compensating crystal oscillator |
| CN111064445A (en) * | 2019-12-24 | 2020-04-24 | 北京无线电计量测试研究所 | Anti-irradiation differential output oscillation chip |
| CN111641389A (en) * | 2020-05-13 | 2020-09-08 | 北京无线电计量测试研究所 | Surface-mounted temperature compensation crystal oscillator design method |
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