CN112701023B - A kind of preparation method of flexible transparent field emission cold cathode - Google Patents
A kind of preparation method of flexible transparent field emission cold cathode Download PDFInfo
- Publication number
- CN112701023B CN112701023B CN202011593091.6A CN202011593091A CN112701023B CN 112701023 B CN112701023 B CN 112701023B CN 202011593091 A CN202011593091 A CN 202011593091A CN 112701023 B CN112701023 B CN 112701023B
- Authority
- CN
- China
- Prior art keywords
- field emission
- flexible transparent
- cold cathode
- substrate
- emission cold
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000002360 preparation method Methods 0.000 title claims abstract description 20
- 239000000758 substrate Substances 0.000 claims abstract description 31
- 239000002184 metal Substances 0.000 claims abstract description 26
- 229910052751 metal Inorganic materials 0.000 claims abstract description 26
- 239000010931 gold Substances 0.000 claims abstract description 17
- 238000000151 deposition Methods 0.000 claims abstract description 12
- 238000005516 engineering process Methods 0.000 claims abstract description 12
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims abstract description 12
- 229910052737 gold Inorganic materials 0.000 claims abstract description 12
- 238000005289 physical deposition Methods 0.000 claims abstract description 6
- 238000000034 method Methods 0.000 claims description 21
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 19
- 238000005566 electron beam evaporation Methods 0.000 claims description 7
- 239000010406 cathode material Substances 0.000 claims description 5
- 238000004549 pulsed laser deposition Methods 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 4
- 239000002390 adhesive tape Substances 0.000 claims description 3
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 3
- 150000002739 metals Chemical class 0.000 claims description 2
- 239000012780 transparent material Substances 0.000 claims 1
- 239000010445 mica Substances 0.000 description 7
- 229910052618 mica group Inorganic materials 0.000 description 7
- 230000008021 deposition Effects 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 230000006872 improvement Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000002834 transmittance Methods 0.000 description 3
- 238000003491 array Methods 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000004347 surface barrier Methods 0.000 description 2
- 239000013077 target material Substances 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000002041 carbon nanotube Substances 0.000 description 1
- 229910021393 carbon nanotube Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000008358 core component Substances 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 239000012776 electronic material Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910000314 transition metal oxide Inorganic materials 0.000 description 1
- 238000000233 ultraviolet lithography Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
- H01J1/02—Main electrodes
- H01J1/30—Cold cathodes, e.g. field-emissive cathode
- H01J1/304—Field-emissive cathodes
- H01J1/3042—Field-emissive cathodes microengineered, e.g. Spindt-type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/02—Manufacture of electrodes or electrode systems
- H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes
- H01J9/025—Manufacture of electrodes or electrode systems of cold cathodes of field emission cathodes
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Cold Cathode And The Manufacture (AREA)
Abstract
Description
技术领域technical field
本发明属于电子材料制备技术领域，具体涉及了一种柔性透明场发射冷阴极的制备方法，尤其涉及一种柔性透明场发射spindt阴极的制备方法。The invention belongs to the technical field of electronic material preparation, in particular to a preparation method of a flexible transparent field emission cold cathode, in particular to a preparation method of a flexible transparent field emission spindt cathode.
背景技术Background technique
场发射的原理是通过外加电场使材料的表面势垒高度降低、宽度变窄，电子由于隧道效应穿过表面势垒，形成电子发射。场发射冷阴极可分为：以spindt型阴极为代表的金属尖锥阵列型，以碳纳米管为代表的新材料型，以及过渡金属氧化物等，其结构主要包括：发射体尖锥、绝缘层、导电层、栅极。如今，场发射冷阴极已经广泛应用于各个方面，例如场发射显示屏，它综合了阴极射线管和液晶显示器的优点，具备画质清晰、低功耗、寿命长、相应快等特性，此外还应用于晶体管、真空微波管、X射线管、电子显微等领域。The principle of field emission is to reduce the height and width of the surface barrier of the material by applying an electric field, and electrons pass through the surface barrier due to the tunnel effect to form electron emission. Field emission cold cathodes can be divided into: metal cone arrays represented by spindt cathodes, new material types represented by carbon nanotubes, and transition metal oxides, etc. The structures mainly include: emitter cones, insulating layer, conductive layer, gate. Today, field emission cold cathodes have been widely used in various fields, such as field emission display screens, which combine the advantages of cathode ray tubes and liquid crystal displays, and have the characteristics of clear picture quality, low power consumption, long life, and fast response. Used in transistors, vacuum microwave tubes, X-ray tubes, electron microscopes and other fields.
随着柔性电子器件的发展，柔性冷阴极材料也备受关注。与传统场发射冷阴极相比，柔性冷阴极材料在具有良好发射性能的同时有利于实现电子器件的小型化设计、方便携带、制造成本低的要求。因此，实现柔性场发射冷阴极材料的制备对于将来应用于可卷曲显示器等领域具有重要意义。With the development of flexible electronic devices, flexible cold cathode materials have also attracted much attention. Compared with traditional field emission cold cathodes, flexible cold cathode materials have good emission performance and are conducive to realizing the requirements of miniaturized design, convenient portability and low manufacturing cost of electronic devices. Therefore, realizing the preparation of flexible field emission cold cathode materials is of great significance for future applications in fields such as rollable displays.
冷阴极作为柔性场发射器件的核心部件，是当前场发射研究的热点之一。但是对于spindt型冷阴极的制备方法仍有很大局限性，传统的制备工艺多采用光刻法制备阵列阴极，导致spindt型阴极阵列集成度较低，电子发射能力、发射电流密度难以大幅度提升，若要提高集成度，对于光刻设备精密度的要求就更高，以至于成本大大提高，此外，一些新型的制备方法例如利用热氧化法、化学气相沉积技术、紫外线光刻技术等，也具有发射性能不稳定等缺点。As the core component of flexible field emission devices, cold cathodes are one of the hotspots in current field emission research. However, the preparation method of spindt-type cold cathodes still has great limitations. The traditional preparation process mostly adopts photolithography to prepare array cathodes, resulting in low integration of spindt-type cathode arrays, and it is difficult to greatly improve the electron emission capability and emission current density. In order to improve the integration, the requirements for the precision of lithography equipment are higher, so that the cost is greatly increased. In addition, some new preparation methods such as thermal oxidation, chemical vapor deposition technology, ultraviolet lithography technology, etc., also It has disadvantages such as unstable launch performance.
因此，本发明使用的是通过真空物理沉积技术制备spindt型冷阴极的方法。在镀有导电金膜的云母片上，选择适合高度、孔径的AAO模板，通过控制金属沉积速率，利用屏蔽效应，形成良好的spindt尖锥，应用于冷阴极上。Therefore, the present invention uses a method for preparing a spindt type cold cathode by vacuum physical deposition technology. On the mica sheet coated with conductive gold film, select an AAO template suitable for height and pore size, and use the shielding effect to form a good spindt cone by controlling the metal deposition rate, which is applied to the cold cathode.
发明内容SUMMARY OF THE INVENTION
本发明的目的在于提供一种方法简单，成本低，可大面积制备的柔性透明场发射spindt冷阴极的制备方法，以解决当前场发射冷阴极难以大面积制作等问题。The purpose of the present invention is to provide a method for preparing a flexible transparent field emission spindt cold cathode with simple method, low cost, and large area preparation, so as to solve the problems that the current field emission cold cathode is difficult to manufacture in a large area.
为实现上述目的，本发明采用如下技术方法：To achieve the above object, the present invention adopts the following technical methods:
一种柔性透明场发射冷阴极，包括：耐高温透明柔性基底，以及沉积在所述基底上的spindt型金属阵列。其中耐高温透明柔性基底为云母片。A flexible transparent field emission cold cathode comprises: a high temperature resistant transparent flexible substrate, and a spindt type metal array deposited on the substrate. The high temperature resistant transparent flexible substrate is mica sheet.
一种柔性透明场发射冷阴极的制备方法，其特征在于，包括如下步骤：A preparation method of a flexible transparent field emission cold cathode is characterized in that, comprising the following steps:
(1)在柔性透明基底上沉积导电透明金膜；(1) depositing a conductive transparent gold film on a flexible transparent substrate;
(2)在沉积金膜的基底上附着AAO模板；(2) attaching the AAO template on the substrate on which the gold film is deposited;
(3)利用真空物理沉积技术制备得spindt型金属阵列；(3) using vacuum physical deposition technology to prepare spindt type metal array;
(4)去除AAO模板，得到场发射阴极材料。(4) The AAO template is removed to obtain a field emission cathode material.
作为本发明进一步改进的技术方案，使用脉冲激光沉积技术在基底上沉积导电膜。As a further improved technical solution of the present invention, a pulsed laser deposition technique is used to deposit a conductive film on the substrate.
作为本发明进一步改进的技术方案，用滴管吸取适量乙醇，滴在基底上，在乙醇完全挥发前，将AAO模版贴附到基底上。As a further improved technical solution of the present invention, an appropriate amount of ethanol is drawn with a dropper, dropped on the substrate, and the AAO template is attached to the substrate before the ethanol is completely evaporated.
作为本发明进一步改进的技术方案，使用磁控溅射技术、脉冲激光沉积技术、电子束蒸发技术等，在基底上制备spindt型金属阵列。沉积的spindt型金属，可以选择功函数较小的金属，例如Ti,Wu等，金属的形状为spindt型，利于电子的发射；As a further improved technical solution of the present invention, a spindt-type metal array is prepared on a substrate using magnetron sputtering technology, pulsed laser deposition technology, electron beam evaporation technology, and the like. For the deposited spindt-type metal, metals with smaller work function can be selected, such as Ti, Wu, etc. The shape of the metal is spindt-type, which is conducive to the emission of electrons;
作为本发明的进一步改进，沉积spindt型金属阵列时，基底温度应控制在300至500摄氏度，电子束的束流控制在100到200mA，沉积速率控制在1到2nm/s，才能获得良好的spindt型金属阵列。As a further improvement of the present invention, when depositing a spindt-type metal array, the substrate temperature should be controlled at 300 to 500 degrees Celsius, the beam current of the electron beam should be controlled at 100 to 200 mA, and the deposition rate should be controlled at 1 to 2 nm/s, in order to obtain a good spindt type metal array.
作为本发明的进一步改进，选用胶带粘接法，直接将AAO粘掉，避免传统溶液腐蚀法对spindt型金属的影响。As a further improvement of the present invention, the adhesive tape bonding method is used, and the AAO is directly glued off, so as to avoid the influence of the traditional solution corrosion method on the spindt-type metal.
本发明的有益效果是：通过利用AAO模板，使用真空物理沉积技术，可以大面积制作柔性透明场发射spindt阴极，改善了以往复杂的制备方法。The beneficial effects of the present invention are: by using the AAO template and the vacuum physical deposition technology, a flexible transparent field emission spindt cathode can be fabricated in a large area, which improves the complicated preparation method in the past.
附图说明Description of drawings
为了更清楚地说明本发明实施例或现有技术中的技术方案，下面将对实施例中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动性的前提下，还可以根据这些附图获得其他的附图。In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the accompanying drawings required in the embodiments will be briefly introduced below. Obviously, the drawings in the following description are only some of the present invention. In the embodiments, for those of ordinary skill in the art, other drawings can also be obtained according to these drawings without creative labor.
图1是本发明柔性透明场发射阴极制备方法实施的流程图；Fig. 1 is the flow chart of the implementation of the flexible transparent field emission cathode preparation method of the present invention;
图2是本发明在含有导电层的基底上贴AAO膜的实物图；Fig. 2 is the real picture of the present invention sticking AAO film on the substrate containing conductive layer;
图3是本发明利用AAO模板形成spindt型金属的原理示意图；Fig. 3 is the principle schematic diagram that the present invention utilizes AAO template to form spindt type metal;
图4是本发明利用AAO膜沉积得到的spindt型金属阵列以及剥离AAO膜后的截面图；Fig. 4 is the spindt type metal array that the present invention utilizes AAO film deposition to obtain and the sectional view after peeling off the AAO film;
具体实施方式Detailed ways
为了使本发明的目的、技术方案和优点更清楚，下面结合附图和具体实施方式对本发明进行详细描述。In order to make the objectives, technical solutions and advantages of the present invention clearer, the present invention will be described in detail below with reference to the accompanying drawings and specific embodiments.
本发明提供一种柔性透明场发射冷阴极的制备方法，制备步骤如图1所示，包括在柔性透明基底上沉积导电透明金膜；在沉积金膜的基底上附着AAO模板；利用真空物理沉积技术制备得spindt型金属阵列；去除AAO模板。The invention provides a preparation method of a flexible transparent field emission cold cathode. The preparation steps are shown in FIG. 1 , including depositing a conductive transparent gold film on a flexible transparent substrate; attaching an AAO template on the substrate on which the gold film is deposited; using vacuum physical deposition The spindt-type metal array was prepared by technique; the AAO template was removed.
在具体实施中，使用的耐高温透明柔性材料为云母片，具有较好的柔性以及透光性；沉积的导电层金属为Au，根据资料显示，Au在一定厚度范围内有较高的导电性以及良好的透光性。In the specific implementation, the high temperature resistant transparent flexible material used is mica sheet, which has good flexibility and light transmittance; the deposited conductive layer metal is Au. According to the data, Au has high conductivity within a certain thickness range. and good light transmittance.
进一步，在具体实施中，用滴管吸取适量乙醇，滴在镀有导电层的基底上，在乙醇完全挥发前，将AAO模版贴附到基底上，效果如图2所示(左下角为基底上AAO模板的放大图，右上角为沉积的Au导电层的放大图)。Further, in specific implementation, use a dropper to draw an appropriate amount of ethanol, drop on the substrate plated with the conductive layer, before the ethanol is completely volatilized, the AAO template is attached to the substrate, the effect is as shown in Figure 2 (the lower left corner is the substrate Enlarged view of the upper AAO template, with an enlarged view of the deposited Au conductive layer in the upper right).
进一步的，在本发明中，基于AAO模板形成spindt型金属阵列的原理如图3所示，由于AAO模板的孔状结构以及屏蔽效应，向AAO模板内沉积金属时，会形成尖锥形状。图4为制备的spindt型金属阵列的截面图，从上图看出spindt型金属阵列嵌套在AAO模板中，spindt型金属的直径约为250nm，与AAO模板的尺寸一致。下图看出剥离后AAO模板已被部分填充，其中空出的尖锥部分，即为沉积在基底上的金属尖锥。Further, in the present invention, the principle of forming a spindt-type metal array based on the AAO template is shown in FIG. 3 . Due to the hole-like structure of the AAO template and the shielding effect, when metal is deposited into the AAO template, a sharp cone shape will be formed. Figure 4 is a cross-sectional view of the prepared spindt-type metal array. It can be seen from the above figure that the spindt-type metal array is nested in the AAO template, and the diameter of the spindt-type metal is about 250 nm, which is consistent with the size of the AAO template. The figure below shows that the AAO template has been partially filled after peeling, and the vacant taper part is the metal taper deposited on the substrate.
本发明使用的电子束蒸发技术，具体步骤包括：将靶材安装在电子束蒸发装置的阴极靶槽中，将贴附了AAO模板的含导电层的基底放入样品台固定，用挡板遮挡样品台；对装置进行抽气，先打开机械泵，开启角阀，对真空镀膜室进行预抽气，真空度小于10Pa后关闭角阀，打开电磁阀，打开分子泵，真空度小于1Pa后，打开闸板阀；打开温控电源，加热基片300至500度。待装置内压强小于5*10^-4pa；打开电子束蒸发源电源，调节“预置”，预热2～3分钟；打开高压按钮，调节光斑至靶材中央，再缓慢调大束流在100至200mA；待沉积速率稳定在1至2nm/s后，打开挡板，进行沉积。The specific steps of the electron beam evaporation technology used in the present invention include: installing the target material in the cathode target tank of the electron beam evaporation device, placing the substrate containing the conductive layer attached with the AAO template into the sample stage to fix it, and blocking it with a baffle. Sample stage; to pump the device, first open the mechanical pump, open the angle valve, pre-pump the vacuum coating chamber, close the angle valve after the vacuum degree is less than 10Pa, open the solenoid valve, open the molecular pump, after the vacuum degree is less than 1Pa, Open the gate valve; turn on the temperature control power supply, and heat the substrate at 300 to 500 degrees. When the pressure in the device is less than 5*10^-4pa; turn on the power of the electron beam evaporation source, adjust the "preset", and preheat for 2 to 3 minutes; turn on the high pressure button, adjust the spot to the center of the target, and then slowly increase the beam current at 100 to 200 mA; after the deposition rate is stabilized at 1 to 2 nm/s, the shutter is opened and deposition is performed.
本发明使用的磁控溅射技术(PLD)，具体步骤包括：将靶材安置在靶槽上，样品固定到样品台；对装置进行真空抽气，至压强降为10^-4KPa以下；打开激光器，设置模式，调节激光位置，进行溅射沉积。The specific steps of the magnetron sputtering technology (PLD) used in the present invention include: placing the target material on the target groove, and fixing the sample to the sample stage; vacuuming the device until the pressure drop is below 10^-4KPa; opening the Laser, set mode, adjust laser position, do sputter deposition.
本发明利用AAO模板以及屏蔽效应，在有Au导电层的云母片上沉积spindt尖锥，可以得到较均匀、面积较大的场发射阴极，改良了以往成本高，而且难以大面积批量制备的方法。与此同时，用本专利制作的场发射阴极拥有良好的透光性和柔韧性，这也大大扩大了其应用范围，具有极大的实际意义。The invention utilizes the AAO template and the shielding effect to deposit the spindt cone on the mica sheet with the Au conductive layer to obtain a field emission cathode with a relatively uniform and large area, which improves the previous method with high cost and difficulty in mass production. At the same time, the field emission cathode made with this patent has good light transmittance and flexibility, which greatly expands its application range and has great practical significance.
下面以具体实例对柔性透明场发射冷阴极的制备方法做详细说明：The preparation method of the flexible transparent field emission cold cathode is described in detail below with specific examples:
实施例1：Example 1:
耐高温透明柔性基底采用边长1cm，厚0.1mm的云母片，对云母片使用无水乙醇进行超声波清洗15min，取出晾干后，使其固定在PLD样品台上，将金靶安置在靶槽上，打开机械泵，通入Ar气，打开闸板阀、分子泵，对装置进行真空抽气，至压强降为10^-4KPa以下；打开激光器，设置模式，调节激光位置，进行溅射，时间为30min。取出沉积了Au导电层的云母片，用滴管吸取适量乙醇，滴在其中心部分，在乙醇全挥发前，用镊子将AAO模版贴附到基底上。等待完全晾干，再将上述基底固定在样品台上，放入电子束蒸发装置的真空镀膜室，将Ti靶放入阴极靶槽，对装置进行抽气，使装置内压强小于5*10^-4pa并加热至300摄氏度，打开电子束蒸发源电源，调节“预置”，使枪灯丝电流为0.2～0.3A，预热3分钟后调至0.5A；“高压选择”开关调到6KV，再按高压旋钮，调节光斑至靶材中央，再缓慢调大束流至100到200mA，沉积速率控制在1到2nm/s；打开挡板，进行沉积，通过膜厚仪记录膜厚，沉积500nm。沉积完成后取出，使用胶带将AAO模板粘掉，得到柔性透明场发射冷阴极。The high temperature-resistant transparent flexible substrate is made of mica sheets with a side length of 1 cm and a thickness of 0.1 mm. The mica sheets are ultrasonically cleaned with absolute ethanol for 15 minutes. After they are taken out and dried, they are fixed on the PLD sample stage, and the gold target is placed in the target groove. On, turn on the mechanical pump, let in Ar gas, turn on the gate valve and molecular pump, and vacuum the device until the pressure drops below 10^-4KPa; turn on the laser, set the mode, adjust the laser position, and perform sputtering , the time is 30min. Take out the mica sheet on which the Au conductive layer has been deposited, and use a dropper to pick up an appropriate amount of ethanol and drop it on the central part. Before the ethanol is completely evaporated, the AAO template is attached to the substrate with tweezers. Wait for it to dry completely, then fix the above-mentioned substrate on the sample stage, put it into the vacuum coating chamber of the electron beam evaporation device, put the Ti target into the cathode target tank, and pump the device to make the pressure inside the device less than 5*10^ -4pa and heated to 300 degrees Celsius, turn on the power of the electron beam evaporation source, adjust the "preset" to make the gun filament current 0.2 ~ 0.3A, and adjust it to 0.5A after preheating for 3 minutes; the "high voltage selection" switch is adjusted to 6KV, Press the high-pressure knob again to adjust the spot to the center of the target, then slowly increase the beam current to 100 to 200 mA, and control the deposition rate to 1 to 2 nm/s; open the baffle to deposit, record the film thickness with a film thickness meter, and deposit 500 nm. After the deposition is completed, the AAO template is removed with adhesive tape to obtain a flexible transparent field emission cold cathode.
以上实施例的说明只是用于帮助理解本发明的方法及其核心思想。应当指出，对于本技术领域的普通技术人员来说，在不脱离本发明原理的前提下，还可以对本发明进行若干改进和修饰，这些改进和修饰也落入本发明权利要求的保护范围内。The descriptions of the above embodiments are only used to help understand the method and the core idea of the present invention. It should be pointed out that for those skilled in the art, without departing from the principle of the present invention, several improvements and modifications can also be made to the present invention, and these improvements and modifications also fall within the protection scope of the claims of the present invention.
对所公开的实施例的上述说明，使本领域专业技术人员能够实现或使用本发明。对这些实施例的多种修改对本领域的专业技术人员来说将是显而易见的，本文中所定义的一般原理可以在不脱离本发明的精神或范围的情况下，在其它实施例中实现。因此，本发明将不会被限制于本文所示的这些实施例，而是要符合与本文所公开的原理和新颖特点相一致的最宽的范围。The above description of the disclosed embodiments enables any person skilled in the art to make or use the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be implemented in other embodiments without departing from the spirit or scope of the invention. Thus, the present invention is not intended to be limited to the embodiments shown herein, but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (8)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011593091.6A CN112701023B (en) | 2020-12-29 | 2020-12-29 | A kind of preparation method of flexible transparent field emission cold cathode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011593091.6A CN112701023B (en) | 2020-12-29 | 2020-12-29 | A kind of preparation method of flexible transparent field emission cold cathode |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN112701023A CN112701023A (en) | 2021-04-23 |
| CN112701023B true CN112701023B (en) | 2022-08-12 |
Family
ID=75511520
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202011593091.6A Active CN112701023B (en) | 2020-12-29 | 2020-12-29 | A kind of preparation method of flexible transparent field emission cold cathode |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN112701023B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113990723B (en) * | 2021-09-26 | 2023-10-03 | 杭州电子科技大学 | Preparation method of arrayed vertical graphene field emission cold cathode |
Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4990766A (en) * | 1989-05-22 | 1991-02-05 | Murasa International | Solid state electron amplifier |
| US5507676A (en) * | 1994-11-18 | 1996-04-16 | Texas Instruments Incorporated | Cluster arrangement of field emission microtips on ballast layer |
| CN1349240A (en) * | 2001-11-27 | 2002-05-15 | 北京大学 | Field emitting cathode and its making process and application |
| CN1670884A (en) * | 2004-02-24 | 2005-09-21 | 三星Sdi株式会社 | Ballistic electron surface emitting device launcher and device using same |
| CN1763885A (en) * | 2004-08-30 | 2006-04-26 | 三星Sdi株式会社 | Electron emission device and manufacturing method thereof |
| CN101183631A (en) * | 2007-11-16 | 2008-05-21 | 武汉大学 | A kind of preparation method of carbon nanotube array field emission cathode |
| KR20100034417A (en) * | 2008-09-24 | 2010-04-01 | 포항공과대학교 산학협력단 | A method for fabricating metal nanopin array and an electron emission element using the nanopin array |
| CN102262989A (en) * | 2011-06-27 | 2011-11-30 | 福州大学 | Method for making anodized aluminum template and method for making field emission cathode array material using the template |
| CN102386042A (en) * | 2011-12-04 | 2012-03-21 | 中国航天科技集团公司第五研究院第五一〇研究所 | Preparation method of carbon nanotube field emission cathode |
| CN111807316A (en) * | 2020-06-11 | 2020-10-23 | 中山大学 | A groove-enclosed hole structure and its application in the processing of tapered micro-nano structures |
-
2020
- 2020-12-29 CN CN202011593091.6A patent/CN112701023B/en active Active
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4990766A (en) * | 1989-05-22 | 1991-02-05 | Murasa International | Solid state electron amplifier |
| US5507676A (en) * | 1994-11-18 | 1996-04-16 | Texas Instruments Incorporated | Cluster arrangement of field emission microtips on ballast layer |
| CN1349240A (en) * | 2001-11-27 | 2002-05-15 | 北京大学 | Field emitting cathode and its making process and application |
| CN1670884A (en) * | 2004-02-24 | 2005-09-21 | 三星Sdi株式会社 | Ballistic electron surface emitting device launcher and device using same |
| CN1763885A (en) * | 2004-08-30 | 2006-04-26 | 三星Sdi株式会社 | Electron emission device and manufacturing method thereof |
| CN101183631A (en) * | 2007-11-16 | 2008-05-21 | 武汉大学 | A kind of preparation method of carbon nanotube array field emission cathode |
| KR20100034417A (en) * | 2008-09-24 | 2010-04-01 | 포항공과대학교 산학협력단 | A method for fabricating metal nanopin array and an electron emission element using the nanopin array |
| CN102262989A (en) * | 2011-06-27 | 2011-11-30 | 福州大学 | Method for making anodized aluminum template and method for making field emission cathode array material using the template |
| CN102386042A (en) * | 2011-12-04 | 2012-03-21 | 中国航天科技集团公司第五研究院第五一〇研究所 | Preparation method of carbon nanotube field emission cathode |
| CN111807316A (en) * | 2020-06-11 | 2020-10-23 | 中山大学 | A groove-enclosed hole structure and its application in the processing of tapered micro-nano structures |
Also Published As
| Publication number | Publication date |
|---|---|
| CN112701023A (en) | 2021-04-23 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5648699A (en) | Field emission devices employing improved emitters on metal foil and methods for making such devices | |
| TW495790B (en) | Electron-emitting source, electron-emitting module, and method of manufacturing electron-emitting source | |
| CN108231507B (en) | A kind of photocathode based on novel nanostructure and preparation method thereof | |
| CN105821378B (en) | A kind of niobium-doped tin dioxide transparent conductive film and preparation method thereof | |
| CN112701023B (en) | A kind of preparation method of flexible transparent field emission cold cathode | |
| CN109444224A (en) | A kind of micro-structure gas detector and preparation method thereof | |
| CN101183631B (en) | A kind of preparation method of carbon nanotube array field emission cathode | |
| CN105551579A (en) | Electrochromic multi-layered transparent conductive thin film and preparation method therefor | |
| CN106847648A (en) | A kind of preparation method of the composite cathode material of use for field emission Graphene/zinc oxide/Graphene sandwich structure | |
| CN109887816A (en) | A kind of reflective field emission electron light source device and preparation method thereof | |
| JPH10125217A (en) | Cathode for vacuum tube | |
| CN111524771A (en) | Cold cathode flat pulse X-ray source capable of fast responding and preparation method | |
| CN104835708A (en) | Preparation method of graphene oxide field emission flat plate display instrument | |
| KR100838114B1 (en) | Electronic emission source and field emission display using the same | |
| CN103198991B (en) | Based on field emission cathode structure and the manufacture method of sea urchin type nickel particles template | |
| CN116240496A (en) | Method for regulating and controlling local surface plasmon resonance based on alloy nanoparticles | |
| CN100466145C (en) | Spraying liquid and spraying method for carbon nanotubes | |
| CN101377991B (en) | Method for Improving Field Electron Emission Performance of Carbon Nanotube Cathode Prepared by Printing Method | |
| TWI309843B (en) | Electron emission source and field emission display device | |
| CN1937156A (en) | Flat board display of fold-line type grid controlled structure and mfg. process | |
| CN112941479B (en) | A kind of tin dioxide/silver/tin dioxide transparent conductive film to adjust the thickness of silver layer and application | |
| CN103663544A (en) | Preparation method of zinc oxide nanorod | |
| CN112951930B (en) | Titanium dioxide/silver/titanium dioxide transparent conductive film and preparation method and application thereof | |
| JP3397236B2 (en) | Method of manufacturing field emission device | |
| CN103839759A (en) | Field emission light source cathode, manufacturing method thereof and field emission light source device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |