CN112698544A - Preparation method of light control film - Google Patents
Preparation method of light control film Download PDFInfo
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- CN112698544A CN112698544A CN202011589328.3A CN202011589328A CN112698544A CN 112698544 A CN112698544 A CN 112698544A CN 202011589328 A CN202011589328 A CN 202011589328A CN 112698544 A CN112698544 A CN 112698544A
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- mold
- photoetching
- quartz plate
- fused quartz
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/20—Masks or mask blanks for imaging by charged particle beam [CPB] radiation, e.g. by electron beam; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/80—Etching
Abstract
The invention discloses a preparation method of an optical control film, which comprises the steps of firstly manufacturing a photoetching mask, utilizing the photoetching mask to prepare a photoetching mold through photoetching technology, and finally utilizing the photoetching mold to prepare the optical control film.
Description
Technical Field
The invention belongs to the field of light film preparation, and relates to a preparation method of a light control film.
Background
At present, functions of intelligent terminals are more and more powerful, more and more work can be finished at a mobile intelligent terminal, information displayed on a screen as an intelligent terminal interaction interface is more and more, a large number of business secrets or individual privacy are contained, a traditional terminal screen has no peeping prevention capability, and then business and privacy leakage can be easily caused. The invention provides a high-precision peep-proof mold manufactured by utilizing photoresist and a preparation method of a peep-proof film.
Disclosure of Invention
The invention aims to provide a preparation method of a light control film.
The purpose of the invention can be realized by the following technical scheme:
a method for preparing a light control film comprises the following steps:
1) manufacturing a photoetching mask:
I) selecting a fused quartz plate with a certain size;
II) sputtering a chromium layer on the fused quartz plate, and performing rotary smearing while sputtering the chromium layer to form the chromium layer with a certain thickness on the fused quartz plate;
III) spin-coating a layer of electron beam photoresist on the chromium layer;
IV) irradiating the fused quartz plate obtained in the step III) by using electron beams to form a plurality of transversely arranged vertical bars on the fused quartz plate;
v) removing the chromium thin layer by dry etching after exposure and development;
VI) removing the electron beam photoresist and adhering a protective film on the fused quartz plate;
2) photoetching a mold:
I) selecting a fused quartz plate slightly larger than the photoetching mask;
II) plating a layer of film with a certain thickness on the surface of the fused quartz plate;
III) fixing the fused quartz plate on a polishing machine, and starting the polishing machine to polish and polish the coating film on the upper surface of the fused quartz plate for a period of time;
IV) disassembling the fused quartz plate from the polishing machine, placing the fused quartz plate in a baking machine, baking for a period of time, and taking out;
v) coating a layer of photoresist on the coating film on the upper end face of the fused quartz plate in the step IV);
VI) placing the fused quartz plate obtained in the step V) in a baking machine, baking for a period of time and taking out;
3) placing a photoetching mold on a photoetching machine, placing a photoetching mask above the photoetching mold, positioning, starting a UV lamp, irradiating the photoetching mold with light through the photoetching mask, closing the UV lamp after irradiating for a period of time, and taking out the photoetching mold;
4) placing the fused quartz plate in the step 3) in a baking machine, baking for a period of time, and taking out;
5) placing the photoetching mold in a plasma etching machine, starting the etching machine, closing the etching machine after etching for a period of time, and taking out the photoetching mold;
6) putting the photoetching mold into a cleaning tank, washing the photoresist residue on the surface of the photoetching mold by using an acid solution, heating an alkali solution, washing by using the alkali solution, transferring the photoetching mold washed by using the alkali solution into water, continuously introducing ozone, adding chlorine water, soaking by using an organic solvent, and removing the photoresist;
7) manufacturing a mold by taking a photoetching mold as a basic model, preparing a rubber model by the mold, and splicing the rubber model into a rubber mold roller in an end-to-end manner;
8) manufacturing a mold by taking the rubber mold roller as a basic model, and preparing a metal mold roller through the mold;
9) coating a layer of transparent adhesive on the base film of the light control film, and irradiating by using a UV lamp;
10) transferring the side, coated with the transparent adhesive, of the base film of the light control film by a metal mold roller;
11) after transfer printing, filling black glue into the position of the transparent glue empty groove on the base film of the light control film;
12) and rolling the light control film base film filled with the black glue.
Further, the fused silica plate of a certain size in the step 1) is specifically 160mmX160mm in area and 6.15mm in thickness.
Further, the chromium layer with a certain thickness in the step 1) is specifically 80nm-100 nm.
Further, the coating film with a certain thickness in the step 2) is specifically 160 um.
Further, the polishing period in the step 2) is specifically 30min, the baking period in the step IV) in the step 2) is specifically 10min, and the baking period in the step VI) in the step 2) is specifically 20 min.
Further, the irradiation period in the step 3) is specifically 10-15 min.
Further, the period of time in the step 4) is specifically 20 min.
Further, the period of time in the step 5) is specifically 40 min.
The invention has the beneficial effects that: according to the technical scheme provided by the invention, the mold is prepared in a photoetching mode, the optical design of the high-transmittance peep-proof film can be provided by the mold, and the light control film prepared by the invention can adjust the light emitting angle according to different application requirements, so that different light control requirements are met, and the peep-proof capability of the light film is further met.
Drawings
In order to facilitate understanding for those skilled in the art, the present invention will be further described with reference to the accompanying drawings.
FIG. 1 is a simplified step diagram of the operation of the present invention.
Detailed Description
The invention is illustrated in detail by the following examples in conjunction with fig. 1:
a method for preparing a light control film is characterized by comprising the following steps:
1) manufacturing a photoetching mask:
I) selecting a fused quartz plate with a certain size;
II) sputtering a chromium layer on the fused quartz plate, and performing rotary smearing while sputtering the chromium layer to form the chromium layer with a certain thickness on the fused quartz plate;
III) spin-coating a layer of electron beam photoresist on the chromium layer;
IV) irradiating the fused quartz plate obtained in the step III) by using electron beams to form a plurality of transversely arranged vertical bars on the fused quartz plate;
v) removing the chromium thin layer by dry etching after exposure and development;
VI) removing the electron beam photoresist and adhering a protective film on the fused quartz plate;
2) photoetching a mold:
I) selecting a fused quartz plate slightly larger than the photoetching mask;
II) plating a layer of film with a certain thickness on the surface of the fused quartz plate;
III) fixing the fused quartz plate on a polishing machine, and starting the polishing machine to polish and polish the coating film on the upper surface of the fused quartz plate for a period of time;
IV) disassembling the fused quartz plate from the polishing machine, placing the fused quartz plate in a baking machine, baking for a period of time, and taking out;
v) coating a layer of photoresist on the coating film on the upper end face of the fused quartz plate in the step IV);
VI) placing the fused quartz plate obtained in the step V) in a baking machine, baking for a period of time and taking out;
3) placing a photoetching mold on a photoetching machine, placing a photoetching mask above the photoetching mold, positioning, starting a UV lamp, irradiating the photoetching mold with light through the photoetching mask, closing the UV lamp after irradiating for a period of time, and taking out the photoetching mold;
4) placing the fused quartz plate in the step 3) in a baking machine, baking for a period of time, and taking out;
5) placing the photoetching mold in a plasma etching machine, starting the etching machine, closing the etching machine after etching for a period of time, and taking out the photoetching mold;
6) putting the photoetching mold into a cleaning tank, washing the photoresist residue on the surface of the photoetching mold by using an acid solution, heating an alkali solution, washing by using the alkali solution, transferring the photoetching mold washed by using the alkali solution into water, continuously introducing ozone, adding chlorine water, soaking by using an organic solvent, and removing the photoresist;
7) manufacturing a mold by taking a photoetching mold as a basic model, preparing a rubber model by the mold, and splicing the rubber model into a rubber mold roller in an end-to-end manner;
8) manufacturing a mold by taking the rubber mold roller as a basic model, and preparing a metal mold roller through the mold;
9) coating a layer of transparent adhesive on the base film of the light control film, and irradiating by using a UV lamp;
10) transferring the side, coated with the transparent adhesive, of the base film of the light control film by a metal mold roller;
11) after transfer printing, filling black glue into the position of the transparent glue empty groove on the base film of the light control film;
12) and rolling the light control film base film filled with the black glue.
The fused silica plate with a certain size in the step 1) is specifically 160mmX160mm in area and 6.15mm in thickness.
The chromium layer with a certain thickness in the step 1) is 80nm-100 nm.
The coating film with a certain thickness in the step 2) is specifically 160 um.
The polishing period in step 2) is specifically 30min, the baking period in step IV) in step 2) is specifically 10min, and the baking period in step VI) in step 2) is specifically 20 min.
The irradiation period in the step 3) is specifically 10-15 min.
The period of time in the step 4) is specifically 20 min.
The period of time in the step 5) is specifically 40 min.
The preferred embodiments of the invention disclosed above are intended to be illustrative only. The preferred embodiments are not intended to be exhaustive or to limit the invention to the precise embodiments disclosed. Obviously, many modifications and variations are possible in light of the above teaching. The embodiments were chosen and described in order to best explain the principles of the invention and the practical application, to thereby enable others skilled in the art to best utilize the invention. The invention is limited only by the claims and their full scope and equivalents.
Claims (8)
1. A method for preparing a light control film is characterized by comprising the following steps:
1) manufacturing a photoetching mask:
I) selecting a fused quartz plate with a certain size;
II) sputtering a chromium layer on the fused quartz plate, and performing rotary smearing while sputtering the chromium layer to form the chromium layer with a certain thickness on the fused quartz plate;
III) spin-coating a layer of electron beam photoresist on the chromium layer;
IV) irradiating the fused quartz plate obtained in the step III) by using electron beams to form a plurality of transversely arranged vertical bars on the fused quartz plate;
v) removing the chromium thin layer by dry etching after exposure and development;
VI) removing the electron beam photoresist and adhering a protective film on the fused quartz plate;
2) photoetching a mold:
I) selecting a fused quartz plate slightly larger than the photoetching mask;
II) plating a layer of film with a certain thickness on the surface of the fused quartz plate;
III) fixing the fused quartz plate on a polishing machine, and starting the polishing machine to polish and polish the coating film on the upper surface of the fused quartz plate for a period of time;
IV) disassembling the fused quartz plate from the polishing machine, placing the fused quartz plate in a baking machine, baking for a period of time, and taking out;
v) coating a layer of photoresist on the coating film on the upper end face of the fused quartz plate in the step IV);
VI) placing the fused quartz plate obtained in the step V) in a baking machine, baking for a period of time and taking out;
3) placing a photoetching mold on a photoetching machine, placing a photoetching mask above the photoetching mold, positioning, starting a UV lamp, irradiating the photoetching mold with light through the photoetching mask, closing the UV lamp after irradiating for a period of time, and taking out the photoetching mold;
4) placing the fused quartz plate in the step 3) in a baking machine, baking for a period of time, and taking out;
5) placing the photoetching mold in a plasma etching machine, starting the etching machine, closing the etching machine after etching for a period of time, and taking out the photoetching mold;
6) putting the photoetching mold into a cleaning tank, washing the photoresist residue on the surface of the photoetching mold by using an acid solution, heating an alkali solution, washing by using the alkali solution, transferring the photoetching mold washed by using the alkali solution into water, continuously introducing ozone, adding chlorine water, soaking by using an organic solvent, and removing the photoresist;
7) manufacturing a mold by taking a photoetching mold as a basic model, preparing a rubber model by the mold, and splicing the rubber model into a rubber mold roller in an end-to-end manner;
8) manufacturing a mold by taking the rubber mold roller as a basic model, and preparing a metal mold roller through the mold;
9) coating a layer of transparent adhesive on the base film of the light control film, and irradiating by using a UV lamp;
10) transferring the side, coated with the transparent adhesive, of the base film of the light control film by a metal mold roller;
11) after transfer printing, filling black glue into the position of the transparent glue empty groove on the base film of the light control film;
12) and rolling the light control film base film filled with the black glue.
2. The method of claim 1, wherein the fused silica plate of a certain size in step 1) has an area of 160mmX160mm and a thickness of 6.15 mm.
3. The method of claim 1, wherein the chromium layer having a certain thickness in step 1) is 80nm to 100 nm.
4. The method of claim 1, wherein the coating film having a certain thickness in step 2) is 160 um.
5. The method of claim 1, wherein the polishing step in step 2) is performed for a period of time of 30min, the baking step in step IV) in step 2) is performed for a period of time of 10min, and the baking step in step VI) in step 2) is performed for a period of time of 20 min.
6. The method of claim 1, wherein the irradiation in step 3) is performed for a period of time, specifically 10-15 min.
7. The method of claim 1, wherein the period of time in step 4) is 20 min.
8. The method of claim 1, wherein the period of time in step 5) is specifically 40 min.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN202011589328.3A CN112698544A (en) | 2020-12-29 | 2020-12-29 | Preparation method of light control film |
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| CN202011589328.3A CN112698544A (en) | 2020-12-29 | 2020-12-29 | Preparation method of light control film |
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| CN112698544A true CN112698544A (en) | 2021-04-23 |
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| CN202011589328.3A Pending CN112698544A (en) | 2020-12-29 | 2020-12-29 | Preparation method of light control film |
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Citations (10)
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|---|---|---|---|---|
| CN101821650A (en) * | 2007-10-16 | 2010-09-01 | 3M创新有限公司 | Higher transmission light control film |
| JP2011066273A (en) * | 2009-09-18 | 2011-03-31 | Konica Minolta Holdings Inc | Method of forming fine mask pattern, nanoimprint lithography method, and method of manufacturing microstructure |
| CN105204099A (en) * | 2015-09-21 | 2015-12-30 | 东莞市纳利光学材料有限公司 | Peep-proof brightening film and manufacturing method thereof |
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| CN109521641A (en) * | 2018-10-25 | 2019-03-26 | 宁波微迅新材料科技有限公司 | A kind of UV mold version lithographic fabrication process |
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| CN110682612A (en) * | 2019-11-01 | 2020-01-14 | 深圳市义恒光电科技有限公司 | Foldable information peep-proof protective film and manufacturing method thereof |
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2020
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| CN101821650A (en) * | 2007-10-16 | 2010-09-01 | 3M创新有限公司 | Higher transmission light control film |
| JP2011066273A (en) * | 2009-09-18 | 2011-03-31 | Konica Minolta Holdings Inc | Method of forming fine mask pattern, nanoimprint lithography method, and method of manufacturing microstructure |
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| CN105711211A (en) * | 2016-03-03 | 2016-06-29 | 上海交通大学 | All-dimensional peep-proof film with nano-pore structure and preparation technology thereof |
| CN109324473A (en) * | 2018-09-26 | 2019-02-12 | 苏州瑞而美光电科技有限公司 | A kind of lithography mask version and preparation method thereof |
| CN109521641A (en) * | 2018-10-25 | 2019-03-26 | 宁波微迅新材料科技有限公司 | A kind of UV mold version lithographic fabrication process |
| CN111367142A (en) * | 2018-12-26 | 2020-07-03 | 聚灿光电科技（宿迁）有限公司 | Novel optical mask plate with different light transmission |
| CN110676156A (en) * | 2019-10-21 | 2020-01-10 | 昆山百利合电子材料有限公司 | Photoetching semiconductor processing technology |
| CN110682612A (en) * | 2019-11-01 | 2020-01-14 | 深圳市义恒光电科技有限公司 | Foldable information peep-proof protective film and manufacturing method thereof |
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