CN112687569A - Method and structure for modulating characteristics of gallium nitride device - Google Patents
Method and structure for modulating characteristics of gallium nitride device Download PDFInfo
- Publication number
- CN112687569A CN112687569A CN202011575949.6A CN202011575949A CN112687569A CN 112687569 A CN112687569 A CN 112687569A CN 202011575949 A CN202011575949 A CN 202011575949A CN 112687569 A CN112687569 A CN 112687569A
- Authority
- CN
- China
- Prior art keywords
- gallium nitride
- nitride device
- electric field
- external electric
- polar plate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910002601 GaN Inorganic materials 0.000 title claims abstract description 177
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title claims abstract description 173
- 238000000034 method Methods 0.000 title claims abstract description 51
- 230000005684 electric field Effects 0.000 claims abstract description 84
- 239000000758 substrate Substances 0.000 claims description 23
- 229910052751 metal Inorganic materials 0.000 claims description 13
- 239000002184 metal Substances 0.000 claims description 13
- 230000010287 polarization Effects 0.000 claims description 13
- 238000009826 distribution Methods 0.000 claims description 11
- 230000004888 barrier function Effects 0.000 claims description 10
- 230000005533 two-dimensional electron gas Effects 0.000 claims description 8
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 6
- 238000002161 passivation Methods 0.000 claims description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 claims description 4
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 claims description 4
- 229910052738 indium Inorganic materials 0.000 claims description 4
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 4
- 238000005468 ion implantation Methods 0.000 claims description 4
- 238000000151 deposition Methods 0.000 claims description 3
- 230000002687 intercalation Effects 0.000 claims description 3
- 238000009830 intercalation Methods 0.000 claims description 3
- 230000000694 effects Effects 0.000 abstract description 8
- 230000007123 defense Effects 0.000 abstract description 5
- 239000004065 semiconductor Substances 0.000 abstract description 3
- 230000005686 electrostatic field Effects 0.000 description 10
- 239000000463 material Substances 0.000 description 6
- 230000015556 catabolic process Effects 0.000 description 4
- 230000005669 field effect Effects 0.000 description 4
- 230000005855 radiation Effects 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 238000004891 communication Methods 0.000 description 3
- 238000005260 corrosion Methods 0.000 description 3
- 230000007797 corrosion Effects 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 238000011160 research Methods 0.000 description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- 230000001808 coupling effect Effects 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000001737 promoting effect Effects 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
Images
Landscapes
- Junction Field-Effect Transistors (AREA)
Abstract
The invention relates to the technical field of semiconductors, and provides a method and a structure for modulating characteristics of a gallium nitride device. The method mainly comprises the following steps: applying an external electric field to the gallium nitride device, wherein the external electric field is coupled and acts on the gallium nitride device through the inverse piezoelectric effect; the characteristics of the gallium nitride device are modulated by changing the intensity and the direction of an external electric field. The method can specifically modulate the characteristics of the gallium nitride device by adjusting the strength and the direction of an external electric field according to different application scenes of the gallium nitride device so as to adapt to the application requirements of the gallium nitride device in different scenes, promote the performance of the gallium nitride device to be more fully exerted and drive the gallium nitride device to be more effectively utilized in national defense and military fields such as aerospace, radars, electronic countermeasure and the like and civil fields such as 5G, power electronics and the like.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a method and a structure for modulating characteristics of a gallium nitride device.
Background
As a representative example of the third generation semiconductor material, gallium nitride (GaN) material has attracted much attention due to its high forbidden bandwidth, high breakdown voltage, and high radiation and corrosion resistance, and particularly, due to the spontaneous polarization and piezoelectric polarization properties of GaN material, a heterostructure formed by epitaxially growing an extremely thin barrier layer (aluminum gallium nitride, indium gallium nitride, or aluminum nitride) on GaN can form a high-concentration two-dimensional electron gas at a heterojunction interface without any doping, and has very high electron mobility due to its extremely strong quantum confinement effect in a direction perpendicular to the heterojunction interface. Therefore, gallium nitride devices (heterojunction field effect transistors, HFETs) prepared based on heterojunction materials have high breakdown voltage, high critical electric field, high carrier mobility, high saturation drift rate and high radiation resistance and corrosion resistance, so that the gallium nitride devices have extremely wide application prospects in national defense and military fields and national economy fields such as weaponry, aerospace, wireless communication, power transmission and the like.
According to extensive research, the performance of the gallium nitride device is generally optimized at home and abroad by adopting a traditional method for adjusting the intrinsic structure of the gallium nitride device, such as ion treatment, design of a passivation layer structure, a V-shaped gate structure and the like, but the reliability problem is caused by changing the intrinsic structure of the device, and the modulation in the application process can not be carried out according to the actual application scene after the structure is determined.
Disclosure of Invention
Based on the above reasons, the embodiments of the present invention provide a method and a structure for modulating characteristics of a gallium nitride device.
A first aspect of an embodiment of the present invention provides a method for modulating characteristics of a gallium nitride device, including:
applying an external electric field to the gallium nitride device, wherein the external electric field is coupled to act on the gallium nitride device;
and modulating the characteristics of the gallium nitride device by changing the intensity and the direction of the external electric field.
Optionally, the applying an external electric field to the gallium nitride device includes:
arranging a first polar plate and a second polar plate in a preset range of the packaged gallium nitride device, wherein the first polar plate is grounded;
and supplying power to the second polar plate, and generating an external electric field between the first polar plate and the second polar plate so that the external electric field acts on the packaged gallium nitride device.
Optionally, the setting of the first electrode plate and the second electrode plate within the preset range of the packaged gallium nitride device includes:
the method comprises the steps of arranging a first polar plate above the packaged gallium nitride device and at a position spaced by a first preset distance from the upper surface of the packaged gallium nitride device, and arranging a second polar plate below a substrate of the packaged gallium nitride device and at a position spaced by a second preset distance from the substrate.
Optionally, the applying an external electric field to the gallium nitride device includes:
when a gallium nitride device is prepared, depositing a metal electrode on a substrate of the gallium nitride device;
supplying power to the metal electrode to generate an external electric field so that the external electric field acts on the gallium nitride device; and the source electrode of the gallium nitride device is grounded as a common terminal.
Optionally, the modulating the characteristics of the gallium nitride device by changing the strength and the direction of the external electric field includes:
and modulating at least one of the polarization charge distribution, the two-dimensional electron gas distribution, the carrier transport characteristic, the frequency characteristic, the voltage withstanding characteristic, the threshold voltage and other characteristics of the gallium nitride device by changing the strength and the direction of the external electric field.
Optionally, the method for modulating the characteristics of the gallium nitride device is a field effect method, and can jointly act with at least one of a fluorine ion implantation modulation method, a passivation layer structure modulation method, and a V-gate structure modulation method to modulate the characteristics of the gallium nitride device.
Optionally, the gallium nitride device includes:
the device comprises a substrate, a gallium nitride layer, a barrier layer, a source electrode, a grid electrode and a drain electrode; an aluminum nitride intercalation layer is also arranged between the gallium nitride layer and the barrier layer;
wherein the barrier layer is any one type of aluminum gallium nitride, indium gallium nitride and aluminum nitride.
A second aspect of the embodiments of the present invention provides a modulation structure of characteristics of a gallium nitride device, including:
a structure for generating an external electric field;
a gallium nitride device; wherein the gallium nitride device is disposed within the external electric field.
Optionally, the structure for generating an external electric field includes: the first polar plate and the second polar plate are arranged in a preset range of the packaged gallium nitride device, and the first polar plate is grounded;
and supplying power to the second polar plate, and generating an external electric field between the first polar plate and the second polar plate so that the external electric field acts on the packaged gallium nitride device.
Optionally, the structure for generating an external electric field includes:
a metal electrode deposited on the gallium nitride device substrate;
supplying power to the metal electrode to generate an external electric field so that the external electric field acts on the gallium nitride device; and the source electrode of the gallium nitride device is grounded as a common terminal.
Compared with the prior art, the embodiment of the invention has the following beneficial effects:
according to the invention, an external electric field is mainly applied to the gallium nitride device, and the characteristic of the gallium nitride device is modulated according to the strength and the direction of the external electric field, so that the characteristic of the gallium nitride device can be modulated by adjusting the strength and the direction of the external electric field according to different application scenes of the gallium nitride device, the performance of the gallium nitride device is more fully exerted, different application requirements of the gallium nitride device can be met, and the gallium nitride device is driven to be more effectively utilized in national defense and military fields such as space navigation, radar and electronic countermeasure, and civil fields such as 5G and power electronics.
Drawings
Fig. 1 is a schematic diagram of a modulation structure of characteristics of a gan device according to an embodiment of the present invention.
1-external polar plate; 11-external lower pole plate; 12-an external pole plate upper pole plate;
2-gallium nitride device basic structure; 21-a substrate; 22-a gallium nitride layer; 23-barrier layer;
a 24-source electrode; 25-a gate; 26-drain electrode.
Detailed Description
It should be understood by those skilled in the art that the specific structures, dimensions and proportions shown in the drawings and described herein are for illustrative purposes only and are not intended to limit the scope of the appended claims, which shall be limited only by the scope of the appended claims.
Embodiments of the present invention will be described below with reference to the drawings.
The method for modulating the characteristics of the gallium nitride device mainly comprises the following steps:
applying an external electric field to the gallium nitride device, wherein the external electric field is coupled to act on the gallium nitride device; and modulating the characteristics of the gallium nitride device according to the intensity and the direction of the external electric field.
The gallium nitride device has high breakdown voltage, high critical electric field, high carrier mobility, high saturation drift rate and high radiation resistance and corrosion resistance, has extremely wide application prospect in the fields of high temperature, high frequency, high power and strong radiation, is favorable for reducing the size, weight and power consumption of equipment, and is particularly suitable for being applied to the fields of national defense and military. Meanwhile, with the rapid development of the 5G communication technology, as a power amplifier device of a key device of a communication base station, the market scale of a power transistor is gradually enlarged, and a gallium nitride device has better working performance than a silicon (Si) device and a gallium arsenide (GaAs) device under the conditions of high frequency and high power, so that the competitiveness of the gallium nitride device in the market of the power amplifier device is determined; in addition, because the gallium nitride device has high breakdown voltage and high-frequency characteristics, the application prospect of the gallium nitride device in the field of power electronics is also incomparable with that of a Si device and a GaAs device. Therefore, the application value of the gallium nitride device in the field of military and civil will be continuously reflected in the future, and the market application prospect is extremely wide.
Due to the piezoelectric property and polarization property of gallium nitride, an external electric field (an external electric field independently applied to the device outside the device, which is different from an electric field generated by bias voltage of a gate source/drain source of the device) is inevitably coupled and acts on the gallium nitride device through the inverse piezoelectric effect to generate an electric stress effect, so that the strain and polarization charge distribution of the device, the channel carrier distribution and the scattering strength of polarization charges on two-dimensional electron gas carriers are changed, and the performance of the gallium nitride device is fully modulated. Therefore, the external electric field can be completely a design dimension for improving the device characteristics through modulation, and the dimension is a new dimension different from the traditional design based on materials and device structures. At present, research on the coupling action mechanism between an external electric field and a gallium nitride device at home and abroad is very little, and research on improving the performance of the gallium nitride device by actively applying the external electric field is blank.
Therefore, the present embodiment provides a new method for modulating performance of a gallium nitride device, where the method is based on a piezoelectric polarization effect specific to the gallium nitride device and a coupling effect between an external electric field and an internal lattice structure of the gallium nitride device, and by applying the external electric field to the gallium nitride device, changes a piezoelectric polarization inside the gallium nitride device under an inverse piezoelectric effect, thereby effectively modulating characteristics of two-dimensional electron gas distribution, a threshold voltage, a scattering effect of polarization charges on two-dimensional electron gas, and the like, and promoting more sufficient performance of the gallium nitride device and more sufficient application in the military and civilian fields. Optionally, the external electric field of this embodiment may be an external electrostatic field, or an external alternating-current electric field.
In one embodiment, the applying an external electric field to the gallium nitride device comprises:
arranging a first polar plate 12 (which can also be an upper polar plate) and a second polar plate 11 (which can also be a lower polar plate) in a preset range of the packaged gallium nitride device, wherein the first polar plate is grounded 12; the second plate 11 is powered, for example, a dc voltage is applied to the second plate, and an external electric field is generated between the first plate 12 and the second plate 11, so that the external electric field acts on the packaged gallium nitride device.
Optionally, the setting of the first electrode plate and the second electrode plate within the preset range of the packaged gallium nitride device includes:
a first plate 12 is disposed above the packaged gan device and spaced a first predetermined distance from the upper surface of the packaged gan device, and a second plate 11 is disposed below the substrate of the packaged gan device and spaced a second predetermined distance from the substrate, as shown in fig. 1, wherein the first predetermined distance and the second predetermined distance may be equal or different. In this embodiment, neither the first preset distance nor the second preset distance is defined, and the strength and method of the external electric field are set according to the requirement modulated by the gallium nitride device, so that the first preset distance and the second preset distance can be determined.
Specifically, for the external polar plate mode, an electrostatic field is generated, high voltage is applied to the polar plate 1 to generate an external electric field, the gallium nitride device is placed in the electrostatic field, and the electrostatic field acts on the gallium nitride lattice microstructure to modulate the device characteristics. The method does not relate to the preparation process of the gallium nitride device, is suitable for performing characteristic modulation optimization on the packaged gallium nitride device, and has the advantage of simplicity.
In one embodiment, the applying an external electric field to the gallium nitride device comprises:
when preparing a gallium nitride device, depositing a metal electrode on a substrate 21 of the gallium nitride device;
supplying power to the metal electrode to generate an external electric field so that the external electric field acts on the gallium nitride device; wherein the source 24 of the gallium nitride device is grounded as a common terminal.
Optionally, as shown in fig. 1, the gallium nitride device 2 of the present embodiment may include: a substrate 21, a gallium nitride layer 22, a barrier layer 23, a source electrode 24, a gate electrode 25, and a drain electrode 26; this embodiment may add an aluminum nitride (AlN) intercalation between the barrier layer 23 and the gallium nitride layer 22.
The barrier layer 23 is any one of aluminum gallium nitride (AlGaN), indium gallium nitride (InAlN), and aluminum nitride.
Specifically, in the substrate electrode method, in the process of manufacturing the gallium nitride device, a metal electrode (substrate electrode) is directly deposited on the substrate 21, an external electric field is generated by applying high voltage to the electrode of the substrate 21, an electrostatic field acts on a gallium nitride lattice microstructure to modulate the characteristics of the device, and the method directly prepares the electrode on the device itself, so that the method has the advantage of convenience in integration.
In practical application, the external electric field applied to the gan device in this embodiment can be applied in two ways: firstly, the external polar plate mode produces the electrostatic field and acts on the gallium nitride device, secondly, the substrate electrode mode produces the electrostatic field and acts on the gallium nitride device. Fig. 1 shows an external electrode plate mode, which has the same basic principle as the substrate electrode mode, and in a specific application, different specific embodiments can be adopted according to different practical application scenarios.
Optionally, the modulating the characteristics of the gallium nitride device according to the strength and the direction of the external electric field in this embodiment includes:
and modulating at least one of polarization charge distribution, two-dimensional electron gas distribution, carrier transport property, frequency property, voltage withstanding property and threshold voltage of the gallium nitride device according to the intensity and direction of the external electric field.
Optionally, the method for modulating characteristics of the gallium nitride device in this embodiment is a field effect method, and can perform a combined action with at least one of a fluorine ion implantation modulation method, a passivation layer structure modulation method, and a V-gate structure modulation method to modulate characteristics of the gallium nitride device.
In the embodiment, based on the piezoelectric property of the gallium nitride material and the specific polarization scattering effect in the gallium nitride device, an external electric field (different from an electric field generated by bias voltage of a gate source/drain source of the device, namely, different from an electrostatic field inside the device) is creatively selected to couple and act on a gallium nitride lattice structure, so as to modulate the properties of polarization charge distribution, two-dimensional electron gas distribution, carrier transport property, frequency property, voltage resistance property, threshold voltage and the like of the gallium nitride device, and the electrostatic field can be generated by an external polar plate mode to act on the gallium nitride device, and can also be generated by a substrate electrode mode to act on the gallium nitride device; by changing the strength and the direction of an external electric field, the gallium nitride device can be modulated in different degrees and different parameters, so that the gallium nitride device can be selected in a targeted manner according to different device performance modulation requirements.
The method of the embodiment is different from the traditional method for changing the intrinsic structure of the device, the electrostatic field application method is a field effect, and the intrinsic structure of the device is not changed, so that the reliability of the gallium nitride device is better guaranteed; meanwhile, the method of the embodiment can also be combined with the traditional method for changing the intrinsic structure of the device, such as fluorine ion implantation, a passivation layer structure, a V-shaped gate structure and the like.
The method for modulating the characteristics of the gallium nitride device provides a new dimension and a new scheme for improving the performance of the gallium nitride device, namely, the method adapts to the application requirements of different gallium nitride devices by adjusting the strength and the direction of an external electric field according to different application scenes of the gallium nitride device, promotes the performance of the gallium nitride device to be more fully exerted, drives the gallium nitride device to be more effectively utilized in national defense and military fields such as space navigation, radar, electronic countermeasure and the like and civil fields such as 5G, power electronics and the like, and has important significance for promoting weapon equipment and national economic development.
Based on the method for modulating characteristics of the gallium nitride device in the foregoing embodiment, this embodiment further provides a modulation structure of characteristics of the gallium nitride device, as shown in fig. 1, the modulation structure of characteristics of the gallium nitride device mainly includes: a structure and a gallium nitride device generating an external electric field; wherein the gallium nitride device is disposed within the external electric field.
Optionally, the structure for generating an external electric field includes: the first polar plate and the second polar plate are arranged in a preset range of the packaged gallium nitride device, and the first polar plate is grounded;
and supplying power to the second polar plate, and generating an external electric field between the first polar plate and the second polar plate so that the external electric field acts on the packaged gallium nitride device.
Optionally, the structure for generating an external electric field includes:
a metal electrode deposited on the gallium nitride device substrate;
supplying power to the metal electrode to generate an external electric field so that the external electric field acts on the gallium nitride device; and the source electrode of the gallium nitride device is grounded as a common terminal.
Furthermore, the features and benefits of the present invention are described with reference to exemplary embodiments. Accordingly, the invention is expressly not limited to these exemplary embodiments illustrating some possible non-limiting combination of features which may be present alone or in other combinations of features.
Other embodiments of the disclosure will be apparent to those skilled in the art from consideration of the specification and practice of the disclosure disclosed herein. This application is intended to cover any variations, uses, or adaptations of the invention following, in general, the principles of the invention and including such departures from the present disclosure as come within known or customary practice within the art to which the invention pertains. It is intended that the specification and examples be considered as exemplary only, with a true scope and spirit of the invention being indicated by the following claims.
Claims (10)
1. A method for modulating characteristics of a gallium nitride device, comprising:
applying an external electric field to the gallium nitride device, wherein the external electric field is coupled to act on the gallium nitride device;
and modulating the characteristics of the gallium nitride device by changing the intensity and the direction of the external electric field.
2. The method for modulating characteristics of a gallium nitride device according to claim 1, wherein applying an external electric field to the gallium nitride device comprises:
arranging a first polar plate and a second polar plate in a preset range of the packaged gallium nitride device, wherein the first polar plate is grounded;
and supplying power to the second polar plate, and generating an external electric field between the first polar plate and the second polar plate so that the external electric field acts on the packaged gallium nitride device.
3. The method for modulating characteristics of a gallium nitride device according to claim 2, wherein the disposing a first plate and a second plate within a predetermined range of the packaged gallium nitride device comprises:
the method comprises the steps of arranging a first polar plate above the packaged gallium nitride device and at a position spaced by a first preset distance from the upper surface of the packaged gallium nitride device, and arranging a second polar plate below a substrate of the packaged gallium nitride device and at a position spaced by a second preset distance from the substrate.
4. The method for modulating characteristics of a gallium nitride device according to claim 1, wherein applying an external electric field to the gallium nitride device comprises:
when a gallium nitride device is prepared, depositing a metal electrode on a substrate of the gallium nitride device;
supplying power to the metal electrode to generate an external electric field so that the external electric field acts on the gallium nitride device; and the source electrode of the gallium nitride device is grounded as a common terminal.
5. The method for modulating characteristics of a gallium nitride device according to claim 1, wherein the modulating characteristics of the gallium nitride device by varying the intensity and direction of the external electric field comprises:
and modulating at least one of the polarization charge distribution, the two-dimensional electron gas distribution, the carrier transport characteristic, the frequency characteristic, the voltage withstanding characteristic, the threshold voltage and other characteristics of the gallium nitride device by changing the strength and the direction of the external electric field.
6. The method of modulating characteristics of a gallium nitride device according to claim 1, wherein the method of modulating characteristics of a gallium nitride device is a field application method capable of modulating characteristics of the gallium nitride device in combination with at least one of a fluorine ion implantation modulation method, a passivation layer structure modulation method, and a V-gate structure modulation method.
7. The method for modulating characteristics of a gallium nitride device according to claim 1, wherein the gallium nitride device comprises:
the device comprises a substrate, a gallium nitride layer, a barrier layer, a source electrode, a grid electrode and a drain electrode; an aluminum nitride intercalation layer is also arranged between the gallium nitride layer and the barrier layer;
wherein the barrier layer is any one type of aluminum gallium nitride, indium gallium nitride and aluminum nitride.
8. A structure for modulating characteristics of a gallium nitride device, comprising:
a structure for generating an external electric field;
a gallium nitride device; wherein the gallium nitride device is disposed within the external electric field.
9. The structure for modulating the characteristics of a gallium nitride device according to claim 8, wherein said structure for generating an external electric field comprises: the first polar plate and the second polar plate are arranged in a preset range of the packaged gallium nitride device, and the first polar plate is grounded;
and supplying power to the second polar plate, and generating an external electric field between the first polar plate and the second polar plate so that the external electric field acts on the packaged gallium nitride device.
10. The structure for modulating the characteristics of a gallium nitride device according to claim 8, wherein said structure for generating an external electric field comprises:
a metal electrode deposited on the gallium nitride device substrate;
supplying power to the metal electrode to generate an external electric field so that the external electric field acts on the gallium nitride device; and the source electrode of the gallium nitride device is grounded as a common terminal.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011575949.6A CN112687569B (en) | 2020-12-28 | 2020-12-28 | Method and structure for modulating gallium nitride device characteristics |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011575949.6A CN112687569B (en) | 2020-12-28 | 2020-12-28 | Method and structure for modulating gallium nitride device characteristics |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN112687569A true CN112687569A (en) | 2021-04-20 |
| CN112687569B CN112687569B (en) | 2024-08-30 |
Family
ID=75452216
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202011575949.6A Active CN112687569B (en) | 2020-12-28 | 2020-12-28 | Method and structure for modulating gallium nitride device characteristics |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN112687569B (en) |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10270799A (en) * | 1997-03-21 | 1998-10-09 | Sanyo Electric Co Ltd | Light emitting element |
| US20110079767A1 (en) * | 2008-06-04 | 2011-04-07 | Mathieu Xavier Senes | Nitride semiconductor device |
| JP2014041965A (en) * | 2012-08-23 | 2014-03-06 | Renesas Electronics Corp | Semiconductor device |
| TW201536101A (en) * | 2014-03-06 | 2015-09-16 | Fang xin yi | Structure providing electrostatic field to change photon circulation LED characteristics |
| CN105610410A (en) * | 2015-12-21 | 2016-05-25 | 电子科技大学 | Terahertz multiband modulator based on high electron mobility transistor |
| CN106030809A (en) * | 2014-03-25 | 2016-10-12 | 英特尔公司 | III-N transistors with epitaxial layers providing steep subthreshold swing |
| KR20170062788A (en) * | 2015-11-30 | 2017-06-08 | 광주과학기술원 | Field Effect Transistor of having Ability Controlling Band Gap |
| CN108183136A (en) * | 2017-12-29 | 2018-06-19 | 杭州电子科技大学 | A kind of novel voltage domain oscillating diode |
| CN111799326A (en) * | 2020-08-03 | 2020-10-20 | 无锡职业技术学院 | Novel two-dimensional electron gas concentration regulation and control transistor structure and manufacturing method |
-
2020
- 2020-12-28 CN CN202011575949.6A patent/CN112687569B/en active Active
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10270799A (en) * | 1997-03-21 | 1998-10-09 | Sanyo Electric Co Ltd | Light emitting element |
| US20110079767A1 (en) * | 2008-06-04 | 2011-04-07 | Mathieu Xavier Senes | Nitride semiconductor device |
| JP2014041965A (en) * | 2012-08-23 | 2014-03-06 | Renesas Electronics Corp | Semiconductor device |
| TW201536101A (en) * | 2014-03-06 | 2015-09-16 | Fang xin yi | Structure providing electrostatic field to change photon circulation LED characteristics |
| CN106030809A (en) * | 2014-03-25 | 2016-10-12 | 英特尔公司 | III-N transistors with epitaxial layers providing steep subthreshold swing |
| KR20170062788A (en) * | 2015-11-30 | 2017-06-08 | 광주과학기술원 | Field Effect Transistor of having Ability Controlling Band Gap |
| CN105610410A (en) * | 2015-12-21 | 2016-05-25 | 电子科技大学 | Terahertz multiband modulator based on high electron mobility transistor |
| CN108183136A (en) * | 2017-12-29 | 2018-06-19 | 杭州电子科技大学 | A kind of novel voltage domain oscillating diode |
| CN111799326A (en) * | 2020-08-03 | 2020-10-20 | 无锡职业技术学院 | Novel two-dimensional electron gas concentration regulation and control transistor structure and manufacturing method |
Also Published As
| Publication number | Publication date |
|---|---|
| CN112687569B (en) | 2024-08-30 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Trew et al. | Microwave AlGaN/GaN HFETs | |
| US10749021B2 (en) | Semiconductor device and method for manufacturing the same | |
| US9583607B2 (en) | Semiconductor device with multiple-functional barrier layer | |
| US20140253241A1 (en) | High electron mobility transistor device | |
| CN100495724C (en) | Gallium nitride radical heterojunction field effect transistor structure and method for making the same | |
| US8890211B1 (en) | AC-driven high electron mobility transistor devices | |
| CN100433364C (en) | Composite buffer layer nitride high electronic migration rate transmistor epitaxial structure and its manufacturing method | |
| CN109638074B (en) | High electron mobility transistor with n-p-n structure back barrier and manufacturing method thereof | |
| CN104051519A (en) | Device, high electron mobility transistor, and method for controlling the transistor to work | |
| EP4080582B1 (en) | Gallium nitride device, switching power transistor, drive circuit, and gallium nitride device production method | |
| WO2008151138A1 (en) | P-gan/algan/aln/gan enhancement-mode field effect transistor | |
| Lee et al. | High breakdown voltage in AlGaN/GaN HEMTs using AlGaN/GaN/AlGaN quantum-well electron-blocking layers | |
| CN103123934B (en) | The gallium nitride based transistor structure with high electron mobility of tool barrier layer and manufacture method | |
| CN102427084B (en) | Gallium-nitride-based high electron mobility transistor and manufacturing method | |
| CN100418199C (en) | Method for fabricating transistor of aluminum-gallium-nitrogen/gallium nitride with high electron mobility | |
| CN105895685A (en) | Power semiconductor device and manufacturing method thereof | |
| Li et al. | Design of vertical diamond Schottky barrier diode with a novel beveled junction termination extension | |
| WO2017135394A1 (en) | Hetero-junction bipolar transistor and electric device | |
| CN105322009A (en) | Gallium nitride based high electronic mobility transistor epitaxial structure and manufacturing method therefor | |
| CN108807500B (en) | Enhanced high electron mobility transistor with high threshold voltage | |
| CN112687569B (en) | Method and structure for modulating gallium nitride device characteristics | |
| Lian et al. | 9 mV/V ultra-low DIBL of suppressing SCEs in InAlN/GaN HEMT with lattice-matched InxAlyGa (1-xy) N back-barrier for RF device | |
| JP2003109973A (en) | Semiconductor device | |
| JP5875296B2 (en) | Semiconductor substrate and insulated gate field effect transistor | |
| CN204441290U (en) | A kind of In xal 1-xn/AlN composite potential barrier layer gallium nitride radical heterojunction high electron mobility transistor structure |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |