CN112683161A - Probe card flatness detection method - Google Patents

Probe card flatness detection method Download PDF

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Publication number
CN112683161A
CN112683161A CN202110100384.4A CN202110100384A CN112683161A CN 112683161 A CN112683161 A CN 112683161A CN 202110100384 A CN202110100384 A CN 202110100384A CN 112683161 A CN112683161 A CN 112683161A
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China
Prior art keywords
probe
probes
station
flatness
probe card
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Pending
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CN202110100384.4A
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Chinese (zh)
Inventor
杜隽
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Wuxi Xingjie Testing Co ltd
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Wuxi Xingjie Testing Co ltd
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Priority to CN202110100384.4A priority Critical patent/CN112683161A/en
Publication of CN112683161A publication Critical patent/CN112683161A/en
Pending legal-status Critical Current

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Abstract

The invention discloses a method for detecting the flatness of a probe card, which belongs to the technical field of integrated circuit testing and comprises the following steps: moving a probe stage so that the probe stage is close to a probe in the probe card; judging whether the probe station is in contact with the probe according to the signal obtained by the tester; and acquiring the flatness of the probe card according to the contact sequence of the probe table and the probe. The probe card flatness detection can be realized by using a tester and a probe station which are commonly used in the field of integrated circuit chip testing, so that the detection cost of the probe card flatness is greatly reduced.

Description

Probe card flatness detection method
Technical Field
The invention relates to the technical field of integrated circuit testing, in particular to a method for detecting the flatness of a probe card.
Background
Electrical testing of integrated circuit chips (IC chips) is important at various stages of the semiconductor fabrication process. Each IC chip must be tested in both wafer and package form to ensure its electrical function.
The wafer test is to make the tester and probe card form the test loop, wherein the probe card includes the probe surface and many probes set on the probe surface, while testing specifically, place the wafer on the probe station, contact the probe with the pad or lobe block on the wafer directly, in order to utilize the probe to detect each chip on the wafer, thus draw the chip signal, and send the chip signal data to the tester to analyze and judge, in this way, can filter the bad chip of electrical property and function in advance before capsulating, to avoid the increase of the defective products and raise the packaging manufacturing cost, therefore it can be seen that the probe card is a key tool for supervising the finished product yield.
The probe card flatness is an important index for detecting the quality of the probe card, wherein the probe card flatness refers to the uniformity among a plurality of probes in the probe card, generally, the new probe card has higher flatness, and each probe has the same length which is basically 225 μm. During use, there is a large difference in probe consumption, and for a probe card, the probe length is less than 150 μm and is discarded, so for a probe card, the probe height may be 75 μm. In the prior art, a special machine is required to be used for detecting the probe card flatness, but the machine is expensive, so a probe card flatness detecting method with low cost needs to be designed to solve the above problems.
Disclosure of Invention
The invention aims to provide a method for detecting the flatness of a probe card, which aims to solve the problem that the existing probe card flatness detection mode is high in cost.
In order to solve the technical problem, the invention provides a method for detecting the flatness of a probe card, which comprises the following steps of moving a probe station to enable the probe station to be close to a probe in the probe card;
judging whether the probe station is in contact with the probe according to the signal obtained by the tester;
acquiring the flatness of the probe card according to the contact sequence of the probe table and the probe;
before contacting with the first batch of probes, the probe station approaches the probes according to a first step length which is 10-30 μm;
after contacting the first plurality of probes, the probe station firstly returns a first step length and then continues to approach the probes, wherein the step length when the probe station continues to approach the probes is smaller than the first step length; the probe station approaches to the probe according to a second step length, and the second step length is 1-5 mu m;
and after the probe station is contacted with the probes, the probe station stops approaching the probes, and the length of each probe is obtained according to the contact sequence of the probe station and the probes so as to obtain the flatness of the probe card.
Optionally, the distance between the probe station and the probe surface of the probe card is 300 μm to 800 μm.
Optionally, the probe station moves once every 10ms to 100 ms.
Optionally, an IC chip is carried on the probe station.
The invention provides a probe card flatness detection method, which comprises the following steps: moving a probe stage so that the probe stage is close to a probe in the probe card; judging whether the probe station is in contact with the probe according to the signal obtained by the tester; and acquiring the flatness of the probe card according to the contact sequence of the probe table and the probe. The probe card flatness detection can be realized by using a tester and a probe station which are commonly used in the field of integrated circuit chip testing, so that the detection cost of the probe card flatness is greatly reduced.
Drawings
FIG. 1 is a schematic flow chart illustrating a method for inspecting the flatness of a probe card according to the present invention;
fig. 2 is a schematic diagram of an implementation of the probe card flatness detection method according to the present invention.
Detailed Description
The method for detecting the flatness of a probe card according to the present invention will be described in detail with reference to the accompanying drawings and specific embodiments. Advantages and features of the present invention will become apparent from the following description and from the claims. It is to be noted that the drawings are in a very simplified form and are not to precise scale, which is merely for the purpose of facilitating and distinctly claiming the embodiments of the present invention.
Examples
The invention provides a probe card flatness detection method, as shown in fig. 1, comprising the following steps:
s10: moving a probe stage so that the probe stage is close to a probe in the probe card;
s11: judging whether the probe station is in contact with the probe according to the signal obtained by the tester;
s12: and acquiring the flatness of the probe card according to the contact sequence of the probe table and the probe.
The tester and the probe station are common devices in the field of integrated circuit chip testing, so that the cost for detecting the flatness of the probe card by utilizing the two devices is low, and the detection cost of the flatness of the probe card is greatly reduced.
Specifically, referring to fig. 2, an IC chip, specifically, an IC chip in a wafer state or an IC chip in a package state, is carried on the probe station 10.
At an initial time (i.e., a starting time for performing a probe card flatness test, i.e., before the probe stage moves), the distance between the probe stage 10 and the probe surface 310 of the probe card 30 is 300 μm to 800 μm. Preferably, the distance between the probe stage 10 and the probe surface 310 of the probe card 30 is 400 to 600 μm, and may be, for example, 400, 420, 445, 475, 500, 525, 550, 575, 600 μm.
In the present embodiment, the distance between the probe stage 10 and the probe surface 310 of the probe card 30 is preferably 400 μm to 600 μm based on the following consideration: considering that the maximum length of each probe 320 in the probe card 30 is generally 225 μm, that is, when the distance between the probe station 10 and the probe surface 310 is preferably 400 μm, the distance between the probe station 10 and the probe 320 is more than or equal to 175 μm; at this distance, it can be ensured that the probe station 10 does not contact the probe 320 in the initial moving process (initially approaching the probe 320), i.e. a certain starting time and space are provided for the probe station 10, and at the same time, it can be ensured that the probe station 10 can contact the probe 320 after moving for a short time/a few times, i.e. the probe station 10 is prevented from facing a long initial starting time, and the time for detecting the flatness of the probe card 30 is also reduced.
Preferably, before the probe station 10 contacts the first plurality of probes 320, it approaches the probes 320 with a first step size, the first step size being 10 μm to 30 μm. Referring to fig. 2, in the embodiment, before the probe station 10 contacts the probes 320a, 320d, and 320h, the probe station 10 approaches the probes 320 (or approaches the probe surface 310) in a manner that a moving distance (i.e., a length of each moving step, i.e., a step size) is 10 μm to 30 μm each time. For example, at this time, the probe station 10 moves by 10 μm, 12 μm, 15 μm, 18 μm, 20 μm, 22 μm, 25 μm, 28 μm or 30 μm each time, and at such a step size, the probe station 10 can be ensured to approach the probe 320 more rapidly, so as to reduce the detection time; but also can ensure the precision and the reliability of the flatness detection.
The probe station 10 will, after a certain time/number of movements, come into contact with the first set of probes 320, i.e. with the probes 320a, 320d, 320 h. In this embodiment, preferably, after the probe station 10 contacts the first set of probes 320, the probe station 10 returns a first step, i.e. returns 10 μm to 30 μm, that is, the probe station 10 performs a movement away from the probes 320; after this step, the approach to the probe 320 is continued (hereinafter referred to as a second stage of movement, or a second stage of approach to the probe 320; meanwhile, the process of approaching the probe 320 by the moving stage 10 by the first step length is referred to as a first stage of movement), and it is preferable that the moving step length of the probe stage in the second stage of movement is smaller than that in the previous stage (i.e., the first step length is 10 μm to 30 μm). Thereby, reliability and accuracy of contact between the probe station 10 and the probe 320 can be ensured.
Preferably, in the second stage of movement, the probe station 10 is located close to the probe 320 in a second step size, which is 1 μm to 5 μm. Here, since the probe station 10 is brought back by a first step after the probe station 10 is brought into contact with the first plurality of probes 320, that is, the probe station 10 is brought back to the state where it has not been brought into contact with the probes 320. In this case, the probe station 10 approaches the probes 320 by a smaller step (i.e., a second step of 1 μm to 5 μm), so that the accuracy of the probe station 10 contacting the probes 320 can be ensured, i.e., the probe station 10 is prevented from contacting the probes 320a to 320k at the same time, but the probe station 10 is ensured to contact the probes 320a, 320d, 320h first, so that the accuracy of the probe station 10 contacting the probes 320 can be ensured, and the reliability of the flatness detection of the probe card 30 can be ensured.
The length of the first set of probes 320a, 320d, 320h is obtained when the probe station 10 is in contact with the probes 320, for example, when the probe station 10 is in contact with the first set of probes 320a, 320d, 320 h. This point can be conveniently obtained according to the distance between the probe station 10 and the probe surface 310, the number of times the probe station 10 moves, and the step length of each movement, which is not described in detail herein.
After that, the probe station 10 continues to approach the probes 320 in a second step of 1 μm to 5 μm, i.e. in this embodiment, slowly encounters a second batch of probes 320b, 320f, 320 i; third set of probes 320c, 320e, 320g, 320 j; and a fourth set of probes 320 k. After the probe station 10 contacts all the probes 320 (i.e., after the probe station 10 contacts the fourth set of probes 320k in the present embodiment), the probe station 10 stops approaching the probes 320. At this time, the probe station 10 completes its work in probe card flatness inspection. Specifically, the probe station 10 may stop moving or may be far away from the probe 320, which is not limited in this application.
The flatness of the probe card 30 can be obtained by the sequence of the contact between the probe station 10 and the probes 320. For example, if the probe station 10 contacts the probes 320 after 10 batches, the probe card 30 may be considered to have poor flatness; for another example, if the probe station 10 contacts the second set of probes 320 after a long time/many moving steps after contacting the first set of probes 320, the probe card 30 may be considered to have poor flatness. In the embodiment, each time the probe station 10 contacts with a batch of the probes 320, the length of the batch of the probes 320 can be obtained at the same time, so that the flatness of the probe card 30 can be accurately known.
In this embodiment, the probe station 10 moves once every 10ms to 100ms, that is, in the first stage of movement, the probe station 10 approaches the probes 32010 μm to 30 μm every 10ms to 100ms (for example, 10ms, 20ms, 30ms, 40ms, 50ms, 60ms, 70ms, 80ms, 90ms, 100 ms); in the second stage of movement, the probe station 10 approaches the probes 3201 μm to 5 μm every 10ms to 100 ms. At the moving speed, the reliability of the flatness detection of the probe card 30 can be ensured, and the time for detecting the flatness of the probe card 30 is less.
In summary, the testing machine and the probe station commonly used in the field of integrated circuit chip testing can be used for detecting the flatness of the probe card, so that the detection cost of the flatness of the probe card is greatly reduced
The above description is only for the purpose of describing the preferred embodiments of the present invention, and is not intended to limit the scope of the present invention, and any variations and modifications made by those skilled in the art based on the above disclosure are within the scope of the appended claims.

Claims (4)

1. A probe card flatness detection method is characterized by comprising the following steps:
moving a probe stage so that the probe stage is close to a probe in the probe card;
judging whether the probe station is in contact with the probe according to the signal obtained by the tester;
acquiring the flatness of the probe card according to the contact sequence of the probe table and the probe;
before contacting with the first batch of probes, the probe station approaches the probes according to a first step length which is 10-30 μm;
after contacting the first plurality of probes, the probe station firstly returns a first step length and then continues to approach the probes, wherein the step length when the probe station continues to approach the probes is smaller than the first step length; the probe station approaches to the probe according to a second step length, and the second step length is 1-5 mu m;
and after the probe station is contacted with the probes, the probe station stops approaching the probes, and the length of each probe is obtained according to the contact sequence of the probe station and the probes so as to obtain the flatness of the probe card.
2. The method of inspecting flatness of a probe card according to claim 1, wherein a distance between the probe stage and a probe surface in the probe card is 300 μm to 800 μm.
3. The probe card flatness detecting method of claim 1, wherein the probe stage moves every 10ms to 100 ms.
4. The method of detecting the planarity of a probe card of claim 1, wherein an IC chip is carried on the probe station.
CN202110100384.4A 2021-01-25 2021-01-25 Probe card flatness detection method Pending CN112683161A (en)

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CN202110100384.4A CN112683161A (en) 2021-01-25 2021-01-25 Probe card flatness detection method

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113447798A (en) * 2021-08-31 2021-09-28 绅克半导体科技(苏州)有限公司 Calibration method and calibration system of IC test machine and IC test device
WO2023240786A1 (en) * 2022-06-17 2023-12-21 上海泽丰半导体科技有限公司 Stroke compensation system and method for probe card

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102878974A (en) * 2012-10-19 2013-01-16 上海华岭集成电路技术股份有限公司 Probe card evenness detecting method

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102878974A (en) * 2012-10-19 2013-01-16 上海华岭集成电路技术股份有限公司 Probe card evenness detecting method

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113447798A (en) * 2021-08-31 2021-09-28 绅克半导体科技(苏州)有限公司 Calibration method and calibration system of IC test machine and IC test device
WO2023240786A1 (en) * 2022-06-17 2023-12-21 上海泽丰半导体科技有限公司 Stroke compensation system and method for probe card

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