CN102878974B - Probe measurement method of planeness - Google Patents
Probe measurement method of planeness Download PDFInfo
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- CN102878974B CN102878974B CN201210402378.5A CN201210402378A CN102878974B CN 102878974 B CN102878974 B CN 102878974B CN 201210402378 A CN201210402378 A CN 201210402378A CN 102878974 B CN102878974 B CN 102878974B
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Abstract
The invention provides a kind of probe measurement method of planeness, described probe measurement method of planeness comprises: traveling probe platform, makes the probe of probe station in described probe; According to the signal that test machine obtains, judge probe station whether with probes touch; According to the sequencing of probe station and probes touch, obtain the flatness of probe.At this, to utilize in IC chip test field the detection that conventional test machine and probe station just can realize for probe flatness, thus significantly reduce the testing cost of probe flatness.
Description
Technical field
The present invention relates to ic test technique field, particularly a kind of probe measurement method of planeness.
Background technology
The testing electrical property of integrated circuit (IC) chip (integrated circuit chip, IC chip) is all considerable in each stage of semiconductor fabrication process (semiconductor process).Each IC chip wafer (wafer) with encapsulation (package) form must acceptance test to guarantee its electrical functionality (electricalfunction).
Such as, wafer sort (wafer test) makes test machine and probe (probe card) form test loop, and wherein, described probe comprises probe face and is arranged at the many probes (probepin) on described probe face.During concrete test, wafer is placed on probe station, probe is directly contacted with the connection pad (pad) on wafer or projection (bump), to utilize each chip on probe detection wafer, thus extraction chip signal, and these chip signal data are sent to test machine perform an analysis and judgement.Thus, can before the packaging step, prior filtering electrically and the chip of dysfunction, improves encapsulation manufacturing cost to avoid the increase of defective products.
Visible, probe is a key tool of supervision finished product yield, therefore very important in integrated circuit (IC) design manufacture process.And probe flatness is an important indicator of detector probe card quality, wherein, probe flatness refers in probe between many probes regularity (in other words difference in height).Common, a new probe flatness is higher, and every root probe length is identical, is substantially 225 μm (i.e. 9mil).In the use procedure of probe, often there is larger difference in the consumption for probe, and for a probe, it after probe length is lower than 150 μm (i.e. 6mil), just will be scrapped.That is, for a probe, the probe height on it may have the difference of 75 μm.
Therefore, understand the flatness of probe, become a basic premise of this probe of reasonable employment.In prior art, the detection for probe flatness needs to use special board, and the price of this board is very expensive.Base this, how to use the technical matters that the flatness of lower cost detector probe card has become those skilled in the art urgently to be resolved hurrily.
Summary of the invention
The object of the present invention is to provide a kind of probe measurement method of planeness, to solve problem high to the testing cost of probe flatness in prior art.
For solving the problem, the invention provides a kind of probe measurement method of planeness, comprising:
Traveling probe platform, makes the probe of probe station in described probe;
According to the signal that test machine obtains, judge probe station whether with probes touch;
According to the sequencing of probe station and probes touch, obtain the flatness of probe.
Optionally, in described probe measurement method of planeness, before traveling probe platform, the distance in the probe face in described probe station and described probe is 300 μm ~ 800 μm.
Optionally, in described probe measurement method of planeness, with first probes touch before, described probe station by the first step-length near probe, described first step-length is 10 μm ~ 30 μm.
Optionally, in described probe measurement method of planeness, with first probes touch after, described probe station by the second step-length near probe, described second step-length is 1 μm ~ 5 μm.
Optionally, in described probe measurement method of planeness, with first probes touch after, described probe station first returns away first step-length, and then continue near probe, wherein, the step-length of this continuation when probe is less than the first step-length.
Optionally, in described probe measurement method of planeness, described probe station moves once at interval of 10ms ~ 100ms.
Optionally, in described probe measurement method of planeness, after described probe station all contacts with all probes, described probe station stops near probe.
Optionally, in described probe measurement method of planeness, described probe station carries IC chip.
Optionally, in described probe measurement method of planeness, according to the sequencing of probe station and probes touch, obtain the length of every root probe, to obtain the flatness of probe.
In probe measurement method of planeness provided by the invention, to utilize in IC chip test field the detection that conventional test machine and probe station just can realize for probe flatness, thus significantly reduce the testing cost of probe flatness.
Accompanying drawing explanation
Fig. 1 is the schematic flow sheet of the probe measurement method of planeness of the embodiment of the present invention;
Fig. 2 is that the device of the probe measurement method of planeness of the embodiment of the present invention realizes schematic diagram.
Embodiment
Below in conjunction with the drawings and specific embodiments, the probe measurement method of planeness that the present invention proposes is described in further detail.According to the following describes and claims, advantages and features of the invention will be clearer.It should be noted that, accompanying drawing all adopts the form that simplifies very much and all uses non-ratio accurately, only in order to object that is convenient, the aid illustration embodiment of the present invention lucidly.
Please refer to Fig. 1, it is the schematic flow sheet of the probe measurement method of planeness of the embodiment of the present invention.As shown in Figure 1, described probe measurement method of planeness comprises the steps:
S10: traveling probe platform, makes the probe of probe station in described probe;
S11: the signal obtained according to test machine, judge probe station whether with probes touch;
S12: according to the sequencing of probe station and probes touch, obtains the flatness of probe.
Test machine and probe station are the equipment that IC chip test field is commonly used, in other words conj.or perhaps the most substantially and the most indispensable equipment, namely the manufacturer's (also namely need to use the manufacturer of probe, namely need the manufacturer understanding probe flatness) carrying out IC chip test is needed substantially all can to have this two pieces equipment.Thus, when utilizing this two pieces equipment to carry out the detection of probe flatness, can say basic without the need to cost, also namely significantly reduce the testing cost of probe flatness.
As background technology introduced, signal transmission can be carried out between test machine and probe station, whether just can demonstrate probe station by this signal transmission to contact with the probe in probe, this point is the general knowledge of IC chip test, and the application repeats no more this.
Concrete, please also refer to Fig. 2, it is that the device of the probe measurement method of planeness of the embodiment of the present invention realizes schematic diagram.
In the present embodiment, described probe station 10 carries IC chip (not shown in Fig. 2), be specifically as follows the IC chip of Spherulite, can be also the IC chip of encapsulation form, the application limit this.
Initial time (namely carrying out the initial time of probe flatness detection, before namely probe station moves), the distance between the probe face 310 in described probe station 10 and described probe 30 is 300 μm ~ 800 μm.Preferably, the distance between the probe face 310 in described probe station 10 and described probe 30 is 400 μm ~ 600 μm, such as, can be 400 μm, 420 μm, 445 μm, 475 μm, 500 μm, 525 μm, 550 μm, 575 μm, 600 μm.
In the present embodiment, it is based on following consideration that distance between probe face 310 in described probe station 10 and described probe 30 is preferably 400 μm ~ 600 μm: consider that the maximum length of the every root probe 320 in probe 30 is generally 225 μm, that is, when distance between probe station 10 and probe face 310 is preferably 400 μm, probe station 10 is more than or equal to 175 μm with the distance of probe 320; Under this distance, can ensure that probe station 10 does not contact with probe 320 in initial moving process (initial near probe 320), namely probe station 10 certain start-up time and space is given, simultaneously, can ensure again probe station 10 mobile one short period/less number of times after can with probe 320 to contacting, namely avoid probe station 10 and face longer initial set-up time, also just decrease the used time that probe 30 flatness detects.
Preferably, before described probe station 10 contacts with first probe 320, it is by the first step-length near probe 320, and described first step-length is 10 μm ~ 30 μm.Please refer to Fig. 2, in the present embodiment, before namely described probe station 10 contacts with probe 320a, 320d, 320h, this probe station 10 (namely often moves the length moved a step by each displacement, also i.e. step-length) be the mode of 10 μm ~ 30 μm, be alternatively near probe face 310 near probe 320().Such as, at this moment, each displacement of described probe station 10 is 10 μm, 12 μm, 15 μm, 18 μm, 20 μm, 22 μm, 25 μm, 28 μm or 30 μm, under such step-length, namely can ensure that probe station 10 is comparatively fast near probe 320, detect the used time to reduce; The precision that flatness detects and reliability can be ensured again.
Described probe station 10, after mobile certain hour/certain number of times, will contact with first probe 320, namely contact with probe 320a, 320d, 320h.In the present embodiment, preferably, after described probe station 10 contacts with first probe 320, described probe station 10 first returns away first step-length, namely returns away 10 μm ~ 30 μm, and that is described probe station 10 carries out once away from the action of probe 320; After this step, then continue near the movement of probe 320(hereinafter referred to as subordinate phase, the close probe 320 of subordinate phase in other words; Simultaneously, transfer table 10 is called the movement of first stage near the process of probe 320 by the first step-length), preferably, in the movement of this subordinate phase, the moving step length of described probe station is less than the moving step length of previous stage (i.e. the first step-length 10 μm ~ 30 μm).Thereby, it is possible to ensure the reliability that probe station 10 contacts with probe 320 and precision.
Preferably, in the movement of subordinate phase, place probe station 10 is by the second step-length near probe 320, and described second step-length is 1 μm ~ 5 μm.At this, after described probe station 10 contacts with first probe 320, described probe station 10 first returns away first step-length, and that is, now situation about not yet contacting with probe 320 got back to again by described probe station 10.And under these circumstances, described probe station 10 is with a less close described probe 320 of step-length (i.e. the second step-length 1 μm ~ 5 μm), can ensure that described probe station 10 contacts the precision of described probe 320 thus, namely the situation that described probe station 10 contacts with probe 320a ~ 320k is simultaneously avoided, but ensure first to contact with probe 320a, 320d, 320h at described probe station 10, thus, can ensure that described probe station 10 contacts the precision of described probe 320, thus also just ensure that the reliability that probe 30 flatness is detected.
When described probe station 10 contacts with described probe 320, such as, when described probe station 10 contacts with first probe 320a, 320d, 320h, the length of this first probe 320a, 320d, 320h can just be obtained.This point can obtain easily according to the step-length of described probe station 10 and the distance in described probe face 310, the number of times of described probe station 10 movement and each movement, and the application repeats no more.
After this, described probe station 10 continues, with the close described probe 320 of the second step-length 1 μm ~ 5 μm, namely in the present embodiment, to encounter second batch probe 320b, 320f, 320i at leisure; 3rd crowd of probe 320c, 320e, 320g, 320j; And the 4th crowd of probe 320k.After described probe station 10 all contacts with all probes 320 (namely in the present embodiment, after described probe station 10 contacts with the 4th crowd of probe 320k), described probe station 10 stops near probe 320.Now, described probe station 10 complete its probe flatness detect in work.Concrete, described probe station 10 can stop mobile, also can away from probe 320, and the application does not limit this.
By the sequencing that described probe station 10 contacts with probe 320, the flatness of probe 30 just can be obtained.Such as, described probe station 10, after 10 batches, just contacts with described probe 320, then can think that the flatness of probe 30 is poor; And for example, described probe station 10 after contacting with first probe 320, have passed through for a long time/move step many times after, just contact with second batch probe 320, then also can think that the flatness of probe 30 is poor.In the present embodiment, when described probe station 10 often contacts with the probe 320 of a batch, just can obtain the length of this batch of probe 320, thereby, it is possible to the accurate flatness situation understanding probe 30 simultaneously.
In the present embodiment, described probe station 10 moves once at interval of 10ms ~ 100ms, namely in the movement of first stage, described probe station 10 is such as 10ms, 20ms, 30ms, 40ms, 50ms, 60ms, 70ms, 80ms, 90ms, 100ms at interval of 10ms ~ 100ms(), just near described probe 32010 μm ~ 30 μm; In the movement of subordinate phase, described probe station 10 at interval of 10ms ~ 100ms, just near described probe 3201 μm ~ 5 μm.Under this translational speed, the reliability that probe 30 flatness detects can be ensured, can ensure that again the used time that probe 30 flatness detects is less.
As fully visible, to utilize in IC chip test field the detection that conventional test machine and probe station just can realize for probe flatness, thus significantly reduce the testing cost of probe flatness.
Foregoing description is only the description to present pre-ferred embodiments, any restriction not to the scope of the invention, and any change that the those of ordinary skill in field of the present invention does according to above-mentioned disclosure, modification, all belong to the protection domain of claims.
Claims (4)
1. a probe measurement method of planeness, is characterized in that, comprising:
Traveling probe platform, makes the probe of probe station in described probe;
According to the signal that test machine obtains, judge probe station whether with probes touch;
According to the sequencing of probe station and probes touch, obtain the flatness of probe;
Wherein, with first probes touch before, described probe station by the first step-length near probe, described first step-length is 10 μm ~ 30 μm;
With first probes touch after, described probe station first returns away first step-length, and then continue near probe, wherein, the step-length of described continuation when probe is less than the first step-length; Or described probe station is by the second step-length near probe, and described second step-length is 1 μm ~ 5 μm;
After described probe station all contacts with all probes, described probe station stops near probe, according to the sequencing of probe station and probes touch, obtains the length of every root probe, to obtain the flatness of probe.
2. probe measurement method of planeness as claimed in claim 1, is characterized in that, before traveling probe platform, the distance in the probe face in described probe station and described probe is 300 μm ~ 800 μm.
3. the probe measurement method of planeness as described in any one in claim 1 to 2, is characterized in that, described probe station moves once at interval of 10ms ~ 100ms.
4. the probe measurement method of planeness as described in any one in claim 1 to 2, is characterized in that, described probe station carries IC chip.
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| CN104793118B (en) * | 2014-01-17 | 2017-11-03 | 中芯国际集成电路制造(上海)有限公司 | The method for setting testing needle pressure |
| CN104034737B (en) * | 2014-06-13 | 2017-01-18 | 上海华岭集成电路技术股份有限公司 | Method for detecting testability of three-dimensional chip |
| US10190865B2 (en) * | 2016-01-27 | 2019-01-29 | Lam Research Corporation | Verifying end effector flatness using electrical continuity |
| CN112683161A (en) * | 2021-01-25 | 2021-04-20 | 无锡星杰测试有限公司 | Probe card flatness detection method |
| CN113447798B (en) * | 2021-08-31 | 2021-11-19 | 绅克半导体科技(苏州)有限公司 | Calibration method and calibration system of IC test machine and IC test device |
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