CN112680714A - Method for growing AlN thin film - Google Patents
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- CN112680714A CN112680714A CN202011398016.4A CN202011398016A CN112680714A CN 112680714 A CN112680714 A CN 112680714A CN 202011398016 A CN202011398016 A CN 202011398016A CN 112680714 A CN112680714 A CN 112680714A
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- 239000010409 thin film Substances 0.000 title claims abstract description 30
- 238000000034 method Methods 0.000 title claims abstract description 26
- 239000000758 substrate Substances 0.000 claims abstract description 53
- 230000004048 modification Effects 0.000 claims abstract description 17
- 238000012986 modification Methods 0.000 claims abstract description 17
- 238000001312 dry etching Methods 0.000 claims abstract description 15
- 229910052594 sapphire Inorganic materials 0.000 claims abstract description 11
- 239000010980 sapphire Substances 0.000 claims abstract description 11
- 238000001039 wet etching Methods 0.000 claims abstract description 9
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 24
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 claims description 24
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 12
- 238000006243 chemical reaction Methods 0.000 claims description 11
- 238000005530 etching Methods 0.000 claims description 8
- 239000000243 solution Substances 0.000 claims description 8
- 238000009616 inductively coupled plasma Methods 0.000 claims description 7
- 239000010408 film Substances 0.000 claims description 5
- 238000001020 plasma etching Methods 0.000 claims description 5
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 claims description 4
- 238000001451 molecular beam epitaxy Methods 0.000 claims description 4
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 3
- 239000003929 acidic solution Substances 0.000 claims description 3
- 239000012670 alkaline solution Substances 0.000 claims description 3
- 238000005229 chemical vapour deposition Methods 0.000 claims description 3
- 239000011521 glass Substances 0.000 claims description 3
- 238000010884 ion-beam technique Methods 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 229910017604 nitric acid Inorganic materials 0.000 claims description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 3
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 3
- 230000003746 surface roughness Effects 0.000 claims description 3
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 2
- 235000011149 sulphuric acid Nutrition 0.000 claims description 2
- 239000013078 crystal Substances 0.000 abstract description 16
- 229910002704 AlGaN Inorganic materials 0.000 abstract description 9
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 80
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 16
- 239000000463 material Substances 0.000 description 11
- 238000001816 cooling Methods 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 230000001276 controlling effect Effects 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052984 zinc sulfide Inorganic materials 0.000 description 1
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Abstract
The invention provides a method for growing an AlN thin film, which comprises the following steps: carrying out surface modification treatment on one surface of the substrate; growing a low-temperature AlN buffer layer on the surface subjected to the modification treatment; growing an AlN layer on the AlN buffer layer under the conditions of low temperature, high V/III and high pressure; and growing an AlN layer under the conditions of high temperature, low V/III and low pressure on the low-temperature AlN layer. According to the method for growing the AlN thin film on the surface of the substrate, the AlN thin film which is modified and grown on the surface of the substrate has higher crystal quality, and meanwhile, the surface has fewer cracks or no cracks. The surface performance can be effectively improved by controlling the power and time of the dry etching equipment in the process, and meanwhile, the wet etching is also easy to control in the process. Therefore, the quality of the AlN thin film crystal is effectively improved, the problem of larger lattice mismatch with the crystal lattice of a sapphire substrate is solved, and the performance of AlN and AlGaN devices is favorably improved.
Description
Technical Field
The invention relates to the technical field of third-generation wide bandgap semiconductor materials, in particular to a method for growing an AlN film.
Background
Aluminum nitride (AlN) genusThe third generation wide bandgap semiconductor material has the advantages of high bandgap width, high breakdown electric field, high thermal conductivity, high electron saturation rate, high radiation resistance and the like. The AlN crystal has a stable hexagonal wurtzite structure and a lattice constant
AlN has the largest direct band gap in group III-V semiconductor materials, about 6.2 eV. The wide forbidden band of AlN enables the wavelength coverage range of the AlGaN semiconductor luminescent material to be reduced to 200nm and to extend to an ultraviolet band. For this reason, AlN is widely used for ultraviolet detectors, HEMTs, ultraviolet Light Emitting Diodes (LEDs), ultraviolet Lasers (LDs), and the like. For example, the AlGaN ultraviolet detector has a very good application prospect in the aspects of flame detection, missile early warning and the like, so the AlGaN ultraviolet detector receives great attention in the industry.
Although AlN has many advantages and AlGaN materials have a wide range of applications, high quality AlN materials are very difficult to prepare. High temperature and high pressure equipment and a precise source flow control system are required for preparing AlN. At present, the quality of commercial AlN crystals is not good enough, the half width of an X-ray diffractometer in the (002) direction is 200arcsec, the half width of the X-ray diffractometer in the (102) direction is 500arcsec, and the quality of AlN directly influences the quality of AlGaN, so that the performance of an AlGaN device is influenced. And because the difference between the lattice constant of the AlN and the lattice constant of the sapphire substrate is large, the AlN substrate has large lattice mismatch, and cracks are easy to appear on the surface of the AlN during the growth process.
Disclosure of Invention
The present invention is directed to solving at least one of the problems of the background art described above and to providing a method for growing an AlN film on a surface of a substrate.
In order to achieve the above object, the present invention provides a method for growing an AlN film on a surface of a substrate, comprising the steps of:
carrying out surface modification treatment on one surface of the substrate;
growing a low-temperature AlN buffer layer on the surface subjected to the modification treatment;
growing a low temperature AlN layer on the AlN buffer layer under high V/III and high pressure conditions
And growing a high-temperature AlN layer on the low-temperature AlN layer under the conditions of low V/III and low pressure.
According to one aspect of the invention, dry etching or wet etching is used to modify the surface for dangling bond reconstruction;
the dry etching is ion beam etching, reactive ion etching, inductively coupled plasma etching or XeF2Dry etching;
the wet etching is performed by adopting an alkaline solution NaOH or KOH solution, or an acidic solution H2SO4, HNO3 or HF;
the surface roughness of the surface after the modification treatment is more than 1 nm.
According to one aspect of the invention, the low temperature AlN buffer layer is grown after introducing trimethylaluminum and ammonia gas into the growth chamber with the surface placed in the growth chamber.
According to one aspect of the invention, the low-temperature AlN buffer layer is grown in the growth reaction chamber at a temperature of 500-900 ℃, under a pressure of 20-100 mbar and at a growth thickness of 2-300 nm.
According to one aspect of the invention, the low-temperature AlN layer is grown on the low-temperature AlN buffer layer at the temperature of 900-1100 ℃, under the pressure of 200-500 mbar and with the growth thickness of 200-1000 nm, wherein V/III is more than 500.
According to an aspect of the present invention, the high temperature AlN layer is grown after introducing trimethylaluminum and ammonia gas on the low temperature AlN layer.
According to one aspect of the invention, trimethylaluminum and ammonia gas are introduced, the temperature in the growth reaction chamber is 1100-1300 ℃, the pressure is 20-100 mbar, the V/III ratio is 10-100, and the growth thickness is more than 500nm in the high-temperature AlN layer.
According to one aspect of the invention, the substrate is sapphire, silicon carbide or glass.
According to one aspect of the invention, the growth reactor is a metal organic chemical vapor deposition apparatus, a molecular beam epitaxy apparatus, or a hydride vapor phase epitaxy apparatus.
According to the method for growing the AlN thin film on the surface of the substrate, one surface of the substrate is subjected to surface modification treatment, the surface subjected to the modification treatment is subjected to low-temperature AlN buffer layer growth, then a low-temperature AlN layer is grown on the AlN buffer layer, and then a high-temperature AlN layer is grown, so that the AlN thin film which is subjected to the surface modification growth on the surface of the substrate has higher crystal quality, and meanwhile, the surface has fewer cracks or no cracks. The surface performance can be effectively improved by controlling the power and time of the dry etching equipment in the process, and meanwhile, the wet etching adopted in the process is also easy to control. Therefore, the quality of the AlN thin film crystal is effectively improved, the problem of larger lattice mismatch with the crystal lattice of a sapphire substrate is solved, and the performance of AlN and AlGaN devices is favorably improved.
Drawings
FIG. 1 schematically shows a flow chart of a method for growing an AlN thin film on a surface of a substrate according to the present invention;
FIG. 2 schematically shows a structural diagram of an AlN thin film grown on the surface of a substrate according to the present invention;
FIG. 3 is a schematic representation of a block diagram prior to a substrate surface modification process;
fig. 4 is a schematic view showing a structure after the substrate surface modification treatment.
Detailed Description
The technical solutions in the embodiments of the present invention are clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the scope of the present invention.
FIG. 1 schematically shows a flow chart of a method for growing an AlN thin film on a surface of a substrate according to the present invention; FIG. 2 schematically shows a structural diagram of an AlN thin film grown on the surface of a substrate according to the present invention. Referring to fig. 1 and fig. 2, the method for growing an AlN film on a substrate surface according to the present invention includes the following steps:
a. performing surface modification treatment on one surface of the substrate 101;
b. growing a low-temperature AlN buffer layer 102 on the surface subjected to the modification treatment;
c. growing a low-temperature AlN layer 103 on the AlN buffer layer;
d. growing a high-temperature AlN layer 104 on the low-temperature AlN layer;
in the present invention, in the step a, the surface of the substrate 101 is modified by dry etching or wet etching to reconstruct dangling bonds, and the surface roughness of the modified surface is greater than 1nm, as shown in fig. 3 and 4 before and after the modification. The dry etching is ion beam etching IBE, reactive ion etching RIE, inductive coupling plasma etching ICP or XeF2And (4) dry etching. The wet etching is performed by adopting alkaline solution NaOH or KOH solution, or adopting acidic solution H2SO4、HNO3Or HF.
In the step b, the surface of the substrate subjected to the modification treatment is placed in a growth reaction chamber, and the low-temperature AlN buffer layer 102 is grown after introducing trimethylaluminum and ammonia gas. The temperature of the low-temperature AlN buffer layer 102 growing in the growth reaction chamber is 500-900 ℃, the pressure is 20-100 mbar, and the growth thickness is 2-300 nm.
In the above c step, a low-temperature AlN layer of low temperature, high V/III and high pressure is grown on the AlN buffer layer. Specifically, the low-temperature AlN layer 103 is grown on the low-temperature AlN buffer layer 102 after introducing trimethylaluminum and ammonia gas into the low-temperature AlN buffer layer 102. The temperature of the low-temperature AlN layer 103 growing in the growth reaction chamber is 900-1100 ℃, the pressure is 200-500 mbar, the V/III is more than 500, and the growth thickness is 200-1000 nm.
In the above d step, a high temperature AlN layer of high temperature, low V/III and low pressure is grown on the low temperature AlN layer. Specifically, after introducing trimethylaluminum and ammonia gas again, growing a high-temperature AlN layer 104 on the low-temperature AlN layer 103, wherein the temperature in the growth reaction chamber is 1100-1300 ℃, the pressure is 20-100 mbar, the V/III ratio is 10-100, and the growth thickness is more than 500 nm.
In the present invention, the substrate is made of sapphire, silicon carbide, or glass. The growth reaction chamber adopts metal organic chemical vapor deposition equipment MOCVD, molecular beam epitaxy equipment MBE or hydride vapor phase epitaxy equipment HVPE.
According to the above arrangement of the present invention, the following specific embodiments are provided:
example 1:
1. putting the 2-inch sapphire substrate into a dry etching ICP device, setting the power to be 20 watts and the etching time to be 5 minutes;
2. taking out the substrate, putting the substrate into MOCVD, cooling to 900 ℃, adjusting the pressure to 50mBar, introducing trimethylaluminum and ammonia gas, and growing a 20nm low-temperature AlN buffer layer;
3. raising the MOCVD temperature to 1100 ℃, introducing trimethyl aluminum and ammonia gas under the pressure of 200mBar, adjusting the V/III to 1000, and growing a low-temperature AlN layer with the thickness of about 500nm for 30 minutes;
4. raising the MOCVD temperature to 1250 ℃, leading in trimethyl aluminum and ammonia gas under the pressure of 50mBar, regulating the V/III to 100, and growing a high-temperature AlN layer with the thickness of about 1000nm for 60 minutes;
the AlN thin film material with high crystal quality and no surface cracks is obtained. The half width in the XRD test (002) direction was 200arcsec, and the half width in the XRD test (102) direction was 500 arcsec.
Example 2:
1. putting the 4-inch sapphire substrate into a dry etching ICP device, setting the power to be 40 watts and the etching time to be 10 minutes;
2. taking out the substrate, putting the substrate into MOCVD, cooling to 900 ℃, adjusting the pressure to 100mBar, introducing trimethylaluminum and ammonia gas, and growing a 50nm low-temperature AlN buffer layer;
3. raising the MOCVD temperature to 1100 ℃, introducing trimethyl aluminum and ammonia gas under the pressure of 200mBar, adjusting the V/III to 1500, and growing a low-temperature AlN layer with the thickness of about 700nm for 40 minutes;
4. raising the MOCVD temperature to 1250 ℃, introducing trimethylaluminum and ammonia gas under the pressure of 45mBar, adjusting the V/III to 80, and growing a high-temperature AlN layer with the thickness of about 1500nm for 90 minutes;
the AlN thin film material with high crystal quality and no surface cracks is obtained. The half width in the XRD test (002) direction was 180arcsec, and the half width in the XRD test (102) direction was 450 arcsec.
Example 3:
1. putting the 2-inch silicon substrate into an ICP (inductively coupled plasma) device for dry etching, setting the power to be 15 watts, and setting the etching time to be 5 minutes;
2. taking out the substrate, putting the substrate into MOCVD, cooling to 800 ℃, adjusting the pressure to 100mBar, introducing trimethylaluminum and ammonia gas, and growing a 20nm low-temperature AlN buffer layer;
3. raising the MOCVD temperature to 1000 ℃, introducing trimethyl aluminum and ammonia gas under the pressure of 200mBar, regulating the V/III to 2000, and growing a low-temperature AlN layer with the thickness of about 700nm for 40 minutes;
4. raising the MOCVD temperature to 1300 ℃, introducing trimethyl aluminum and ammonia gas under the pressure of 40mBar, adjusting the V/III to 60, and growing a high-temperature AlN layer with the thickness of about 2000nm for 120 minutes;
the AlN thin film material with high crystal quality and no surface cracks is obtained. The half width in the XRD test (002) direction was 150arcsec, and the half width in the XRD test (102) direction was 350 arcsec.
Preparing an ultraviolet LED on the basis, wherein the LED is manufactured into a chip with the thickness of 350 mu m multiplied by 350 mu m, 20mA of current is introduced, the working voltage is 6.0V, and the luminous brightness is 5 mW;
the lifetime of the ultraviolet LED device is 1 ten thousand hours.
Example 4:
1. putting a 2-inch sapphire substrate into NaOH solution, adjusting the temperature of the solution to 50 ℃, and corroding for 10 minutes;
2. taking out the substrate, putting the substrate into MOCVD, cooling to 800 ℃, adjusting the pressure to 50mBar, introducing trimethylaluminum and ammonia gas, and growing a 20nm low-temperature AlN buffer layer;
3. raising the MOCVD temperature to 1050 ℃, introducing trimethyl aluminum and ammonia gas under the pressure of 200mBar, adjusting the V/III to 2500, and growing a low-temperature AlN layer with the thickness of about 500nm for 30 minutes;
4. raising the MOCVD temperature to 1320 ℃, introducing trimethyl aluminum and ammonia gas under the pressure of 30mBar, adjusting the V/III to 40, growing for 150 minutes, and forming a high-temperature AlN layer with the thickness of about 2500 nm;
the AlN thin film material with high crystal quality and no surface cracks is obtained. The half width in the XRD test (002) direction was 120arcsec, and the half width in the XRD test (102) direction was 310 arcsec.
Example 5:
1. placing a 2-inch sapphire substrate into H2SO4In the solution, the temperature of the solution is adjusted to 50 ℃, and the corrosion time is 20 minutes;
2. taking out the substrate, putting the substrate into MOCVD, cooling to 850 ℃, adjusting the pressure to 150mBar, introducing trimethylaluminum and ammonia gas, and growing a 30nm low-temperature AlN buffer layer;
3. raising the MOCVD temperature to 1050 ℃, introducing trimethyl aluminum and ammonia gas under the pressure of 200mBar, adjusting the V/III to 2500, and growing a low-temperature AlN layer with the thickness of about 500nm for 30 minutes;
4. raising the MOCVD temperature to 1350 ℃, introducing trimethylaluminum and ammonia gas under the pressure of 20mBar, adjusting the V/III to 20, and growing a high-temperature AlN layer with the thickness of about 3000nm for 180 minutes;
the AlN thin film material with high crystal quality and no surface cracks is obtained. The half width in the XRD test (002) direction was 80arcsec, and the half width in the XRD test (102) direction was 220 arcsec.
Preparing an ultraviolet LED on the basis, wherein the LED is manufactured into a chip with the thickness of 500 microns multiplied by 500 microns, 350mA current is introduced, the working voltage is 6.0V, and the luminous brightness is 80 mW;
the lifetime of the ultraviolet LED device is 1.5 ten thousand hours.
According to the arrangement of the invention, the AlN thin film which is grown by modifying the surface of the substrate has higher crystal quality, and the surface has less cracks or no cracks. The surface performance can be effectively improved by controlling the power and time of the dry etching equipment, and meanwhile, the wet etching is also easy to control. Therefore, the quality of the AlN thin film crystal is effectively improved, the problem of larger lattice mismatch with the crystal lattice of a sapphire substrate is solved, and the performance of AlN and AlGaN devices is favorably improved.
Finally, it is noted that the above-mentioned preferred embodiments illustrate rather than limit the invention, and that, although the invention has been described in detail with reference to the above-mentioned preferred embodiments, it will be understood by those skilled in the art that various changes in form and detail may be made therein without departing from the scope of the invention as defined by the appended claims.
Claims (9)
1. A method for growing an AlN film on the surface of a substrate is characterized by comprising the following steps:
carrying out surface modification treatment on one surface of the substrate;
growing a low-temperature AlN buffer layer on the surface subjected to the modification treatment;
growing a low temperature AlN layer on the AlN buffer layer under high V/III and high pressure conditions
And growing a high-temperature AlN layer on the low-temperature AlN layer under the conditions of low V/III and low pressure.
2. The method for growing the AlN thin film on the surface of the substrate according to claim 1, wherein the modifying treatment of the reconstruction of the dangling bond is carried out on the surface by adopting dry etching or wet etching;
the dry etching is ion beam etching, reactive ion etching, inductively coupled plasma etching or XeF2Dry etching;
the wet etching is performed by adopting an alkaline solution NaOH or KOH solution, or an acidic solution H2SO4, HNO3 or HF;
the surface roughness of the surface after the modification treatment is more than 1 nm.
3. The method for growing an AlN thin film on the surface of the substrate according to claim 1, wherein the surface is placed in a growth reaction chamber, and the low-temperature AlN buffer layer is grown after introducing trimethylaluminum and ammonia gas.
4. The method for growing the AlN thin film on the surface of the substrate according to claim 3, wherein the temperature for growing the low-temperature AlN buffer layer in the growth reaction chamber is 500-900 ℃, the pressure is 20-100 mbar, and the growth thickness is 2-300 nm.
5. The method for growing the AlN thin film on the surface of the substrate according to claim 1, wherein the temperature for growing the low-temperature AlN thin film on the low-temperature AlN buffer layer is 900-1100 ℃, the pressure is 200-500 mbar, V/III is more than 500, and the growth thickness is 200-1000 nm. .
6. The method for growing an AlN thin film on the surface of the substrate according to claim 4 or 5, wherein the high-temperature AlN layer is grown on the thin film having the low-temperature AlN layer by introducing trimethylaluminum and ammonia gas.
7. The method for growing the AlN thin film on the surface of the substrate according to claim 6, wherein trimethylaluminum and ammonia gas are introduced, the temperature in the growth reaction chamber is 1100-1300 ℃, the pressure is 20-100 mbar, the V/III ratio is 10-100, and the growth thickness is more than 500nm in the high-temperature AlN layer.
8. The method for growing an AlN thin film on the surface of the substrate according to claim 1, wherein the substrate is sapphire, silicon carbide or glass.
9. The method for growing an AlN thin film on the surface of the substrate according to claim 8, wherein the growth reaction chamber is a metal organic chemical vapor deposition apparatus, a molecular beam epitaxy apparatus or a hydride vapor phase epitaxy apparatus.
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113451457A (en) * | 2021-06-25 | 2021-09-28 | 中国科学院半导体研究所 | Preparation method of AlN thin film |
| CN113897676A (en) * | 2021-09-26 | 2022-01-07 | 苏州紫灿科技有限公司 | Crack-free AlN epitaxial film and preparation method thereof |
| CN114388663A (en) * | 2021-12-14 | 2022-04-22 | 南昌大学 | Preparation method of hole-free AlN thin film on Si substrate |
| CN114855280A (en) * | 2022-05-05 | 2022-08-05 | 北京中博芯半导体科技有限公司 | Method for preparing high-quality crack-free aluminum nitride film on silicon and application thereof |
| CN115341277A (en) * | 2022-10-17 | 2022-11-15 | 至芯半导体(杭州)有限公司 | AlN thin film and preparation method and application thereof |
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| CN1992166A (en) * | 2005-12-29 | 2007-07-04 | 深圳大学 | Process for sapphire-based non-mask transverse epitaxial growth of high quality group-III nitride film |
| US7915626B1 (en) * | 2006-08-15 | 2011-03-29 | Sandia Corporation | Aluminum nitride transitional layer for reducing dislocation density and cracking of AIGan epitaxial films |
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2020
- 2020-12-04 CN CN202011398016.4A patent/CN112680714A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1992166A (en) * | 2005-12-29 | 2007-07-04 | 深圳大学 | Process for sapphire-based non-mask transverse epitaxial growth of high quality group-III nitride film |
| US7915626B1 (en) * | 2006-08-15 | 2011-03-29 | Sandia Corporation | Aluminum nitride transitional layer for reducing dislocation density and cracking of AIGan epitaxial films |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113451457A (en) * | 2021-06-25 | 2021-09-28 | 中国科学院半导体研究所 | Preparation method of AlN thin film |
| CN113897676A (en) * | 2021-09-26 | 2022-01-07 | 苏州紫灿科技有限公司 | Crack-free AlN epitaxial film and preparation method thereof |
| CN114388663A (en) * | 2021-12-14 | 2022-04-22 | 南昌大学 | Preparation method of hole-free AlN thin film on Si substrate |
| CN114855280A (en) * | 2022-05-05 | 2022-08-05 | 北京中博芯半导体科技有限公司 | Method for preparing high-quality crack-free aluminum nitride film on silicon and application thereof |
| CN115341277A (en) * | 2022-10-17 | 2022-11-15 | 至芯半导体(杭州)有限公司 | AlN thin film and preparation method and application thereof |
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