CN112673534A - Lid member for package and package - Google Patents

Lid member for package and package Download PDF

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Publication number
CN112673534A
CN112673534A CN201980059130.3A CN201980059130A CN112673534A CN 112673534 A CN112673534 A CN 112673534A CN 201980059130 A CN201980059130 A CN 201980059130A CN 112673534 A CN112673534 A CN 112673534A
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CN
China
Prior art keywords
layer
package
width
cover member
frame shape
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN201980059130.3A
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Chinese (zh)
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CN112673534B (en
Inventor
大道悟
宇野浩规
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Mitsubishi Materials Corp
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Mitsubishi Materials Corp
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Publication date
Priority claimed from JP2019184287A external-priority patent/JP6784317B2/en
Application filed by Mitsubishi Materials Corp filed Critical Mitsubishi Materials Corp
Priority to CN202210506101.0A priority Critical patent/CN114864785A/en
Publication of CN112673534A publication Critical patent/CN112673534A/en
Application granted granted Critical
Publication of CN112673534B publication Critical patent/CN112673534B/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/562—Protection against mechanical damage
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00—Soldering, e.g. brazing, or unsoldering
    • B23K1/0008—Soldering, e.g. brazing, or unsoldering specially adapted for particular articles or work
    • B23K1/0016—Brazing of electronic components
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24—Selection of soldering or welding materials proper
    • B23K35/30—Selection of soldering or welding materials proper with the principal constituent melting at less than 1550 degrees C
    • B23K35/3013—Au as the principal constituent
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C5/00—Alloys based on noble metals
    • C22C5/02—Alloys based on gold
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/06—Containers; Seals characterised by the material of the container or its electrical properties
    • H01L23/08—Containers; Seals characterised by the material of the container or its electrical properties the material being an electrical insulator, e.g. glass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/10—Containers; Seals characterised by the material or arrangement of seals between parts, e.g. between cap and base of the container or between leads and walls of the container
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H01L33/486—Containers adapted for surface mounting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/02218—Material of the housings; Filling of the housings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0225—Out-coupling of light
    • H01S5/02257—Out-coupling of light using windows, e.g. specially adapted for back-reflecting light to a detector inside the housing
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/36—Electric or electronic devices
    • B23K2101/40—Semiconductor devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/02208—Mountings; Housings characterised by the shape of the housings

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Optics & Photonics (AREA)
  • Electromagnetism (AREA)
  • Manufacturing & Machinery (AREA)
  • Mechanical Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)

Abstract

The lid member for package of the present invention is a lid member for package bonded to a package substrate, and includes: a glass member having a bonding portion provided in a planar frame shape and a light transmission portion provided inside the bonding portion; one or more metallization layers formed in a frame shape on the bonding portion of the glass member; and one or more Au-Sn layers provided on the metallization layer and having a frame shape with a width of 250 [ mu ] m or less.

Description

Lid member for package and package
Technical Field
The present invention relates to a lid member for package bonded to a package substrate and a package.
The present application claims priority based on patent application No. 2018-.
Background
Conventionally, a semiconductor device and a light emitting device sealed in a package for protecting a light emitting element such as a semiconductor Laser (LD) or an LED from the external environment are known (for example, refer to patent documents 1 and 2).
The semiconductor device described in patent document 1 includes: a package substrate having a recess with an upper opening; a semiconductor element accommodated in the recess; a window member (a cover member for sealing) disposed so as to cover the opening of the recess; and a sealing structure sealing between the package substrate and the window member. The sealing structure has: a first metal layer arranged on the upper surface of the package substrate in a frame shape; a second metal layer provided on an inner surface of the window member in a frame shape; and a metal bonding layer provided between the first metal layer and the second metal layer, wherein the sealing structure is configured such that one of the first metal layer and the second metal layer is entirely located in a region where the other of the first metal layer and the second metal layer is provided.
The light-emitting device described in patent document 2 includes: a mounting substrate; an ultraviolet light emitting element mounted on the mounting substrate; and a cover (a cover member for sealing) having a recess disposed on the mounting substrate, the recess accommodating the ultraviolet light emitting element. The mounting substrate includes a support body, a first conductor portion supported by the support body, a second conductor portion, and a first bonding metal layer. The cover is provided with: a cover main body having a recess formed on a rear surface thereof; and a second bonding metal layer disposed opposite to the first bonding metal layer at the periphery of the recess. The uppermost layer of each of the first conductor portion, the second conductor portion, and the first bonding metal layer, which is farthest from the support, is made of Au, and the first bonding metal layer and the second bonding metal layer are bonded by Au — Sn.
The metal bonding portion described in patent document 1 is made of Au — Sn alloy. In patent document 2, the first bonding metal layer and the second bonding metal layer are also bonded by an Au — Sn alloy. That is, in both of the structures of patent documents 1 and 2, an Au — Sn layer made of an Au — Sn alloy is formed on the package lid member. The Au — Sn layer is formed by, for example, applying an Au — Sn paste to the above-described portion and performing reflow soldering.
When the Au — Sn paste is applied to a glass plate material and reflow-soldered, the Au — Sn layer may be peeled off from the glass plate material or a part of the glass plate material may be peeled off, and the sealing lid member may be damaged.
Patent document 1: japanese patent No. 6294417
Patent document 2: japanese patent No. 6260919
Disclosure of Invention
The present invention has been made in view of the above circumstances, and an object thereof is to provide a package lid member and a package body that can suppress peeling of an Au — Sn layer and breakage of the package lid member.
A lid member for a package according to an aspect of the present invention is a lid member for a package bonded to a package substrate, and includes: a glass member having a bonding portion provided in a planar frame shape and a light transmission portion provided inside the bonding portion; one or more metallization layers formed in a frame shape on the bonding portion of the glass member; and one or more Au-Sn layers provided on the metallization layer and having a frame shape with a width of 250 [ mu ] m or less.
The Au — Sn layer has a different linear expansion coefficient from that of the glass member. When the Au-Sn layer is formed by reflow soldering, the shrinkage rate of the Au-Sn layer upon cooling is larger than that of the glass member. As a result, stress due to shrinkage of the Au — Sn layer during cooling acts on the glass member, and the Au — Sn layer peels off from the glass member or a part of the glass member is peeled off.
On the other hand, since the width of the Au — Sn layer is 250 μm or less, the stress to the glass member due to the shrinkage of the Au — Sn layer is small, and the peeling and breakage of the glass member due to the shrinkage of the Au — Sn layer can be suppressed.
In a preferred embodiment of the lid member for a package of the present invention, the frame shape of the one or more Au — Sn layers may have one or more corner portions, and the maximum width of the corner portions may be smaller than the width of the frame shape at a portion of the Au — Sn layers other than the corner portions.
The maximum width of the corner portion indicates the maximum dimension in the direction intersecting the circumferential direction of the frame shape. In the above aspect, since the maximum width of the corner portion is smaller than the width of the portion other than the corner portion, the stress in the glass member in the corner portion can be reliably reduced.
In a preferred embodiment of the cover member for a package according to the present invention, the corner portion may be chamfered.
For example, when the frame shape of the Au — Sn layer is rectangular, the two straight portions intersect at 90 ° at the corner portions, and the maximum width of the 4 corner portions is larger than the width of the portion other than the corner portions, so that stress due to shrinkage during cooling of the Au — Sn layer is likely to be concentrated. In contrast, since the corner portion is chamfered, the maximum width of the corner portion is smaller than the width of the portion other than the corner portion, and the stress to the glass member can be further reduced.
In a preferred embodiment of the lid member for a package of the present invention, one or more Au — Sn layers may include a first Au — Sn layer and a second Au — Sn layer, and the second Au — Sn layer may be provided with a gap inside the first Au — Sn layer.
In the above aspect, since the Au — Sn layer includes the first Au — Sn layer and the second Au — Sn layer, the bonding strength when the lid member for package is bonded to the package substrate can be improved. Further, since the second Au — Sn layer is provided with a gap inside the first Au — Sn layer and both the width of the first Au — Sn layer and the width of the second Au — Sn layer are 250 μm or less, stress in the glass member due to shrinkage of the Au — Sn layer is small, and peeling of the Au — Sn layer from the glass member or breakage of the package lid member can be suppressed.
In a preferred embodiment of the cover member for sealing of the present invention, the thickness of the glass member may be 50 μm or more and 3000 μm or less.
The width of the Au — Sn layer may be 50 μm or more.
The width of the Au — Sn layer may be 230 μm or less.
The maximum width of the corner portion may be 30 μm or more and 130 μm or less.
The glass member may be flat.
The glass member may be box-shaped.
A package according to one aspect of the present invention includes at least one or more package substrates and the package lid member according to one aspect of the present invention, wherein the package lid member and the package substrate are joined by a bonding layer formed by melting and curing the Au — Sn layer.
In the package according to one aspect of the present invention, the package substrate and the package lid member are reliably joined, and peeling and breakage of the package substrate due to stress caused by shrinkage of the Au — Sn layer can be suppressed.
In one embodiment of the present invention, peeling of the Au — Sn layer formed on the glass member and breakage of the sealing lid member can be suppressed.
Drawings
Fig. 1 is a perspective view showing a package lid member and a package substrate constituting a package according to a first embodiment.
Fig. 2 is a plan view showing a surface of the package cover member according to the first embodiment to be bonded to the package substrate.
Fig. 3 is a cross-sectional view of the lid member for sealing taken along line a1-a1 shown in fig. 2.
Fig. 4 is a plan view showing a surface of the package cover member of the second embodiment to be bonded to the package substrate.
Fig. 5 is a plan view showing a surface of the package cover member according to the third embodiment to be bonded to the package substrate.
Fig. 6 is a plan view showing a surface of the package cover member according to the fourth embodiment to be bonded to the package substrate.
Fig. 7 is a plan view showing a surface of the package cover member of the fifth embodiment to be bonded to the package substrate.
Fig. 8 is a plan view showing a surface of the package cover member according to the sixth embodiment to be bonded to the package substrate.
Fig. 9 is a cross-sectional view showing the package according to the first embodiment.
Fig. 10 is a cross-sectional view showing a package according to the seventh embodiment.
Fig. 11 is a plan view showing a surface of the package cover member of the eighth embodiment to be bonded to the package substrate.
Detailed Description
Hereinafter, embodiments of a lid member for a package and a package according to the present invention will be described with reference to the drawings. Fig. 1 is a perspective view showing a package substrate 2 and a package lid member 3 according to the present embodiment. Fig. 2 is a plan view of the cover member for package 3. Fig. 3 is a cross-sectional view of the lid member for sealing 3 taken along line a1-a1 in fig. 2. Fig. 9 is a cross-sectional view of the package 1 in which the package substrate 2 and the package lid member 3 are joined.
[ schematic Structure of Package ]
As shown in fig. 1 and 9, the package 1 includes: a package substrate 2 having a recess 21 with an upper opening; and a flat plate-like package lid member 3 bonded to the package substrate 2 to close the recess 21. A Light Emitting element such as an LD (Laser Diode) or an LED (Light Emitting Diode) is accommodated in the package 1 (not shown).
[ Structure of Package substrate ]
As shown in fig. 1 and 9, the package substrate 2 includes a recess 21 having an upper opening and a bonding surface 22 provided around the recess 21. For example, the package substrate 2 is formed in a rectangular box shape from AlN (aluminum nitride) or the like. The recess 21 is closed by the sealing cover member 3 being joined to the joint surface 22, and a space for accommodating a light emitting element or the like is formed.
[ Structure of cover Member for Package ]
As shown in fig. 1 to 3, the cover member for package 3 includes: a rectangular plate-shaped glass member 30 having a bonding portion 33 provided in a planar frame shape and a light transmission portion 34 provided inside the bonding portion 33; a metallization layer 4 formed in a frame shape on the bonding portion 33; and a frame-shaped Au-Sn layer 5 formed on the metallization layer 4.
The joint portion 33 is also referred to as a wire surrounding the periphery of the light transmitting portion 34 including a substantially central portion of the glass member 30. The outline and area of the light transmission part 34 are defined by the joint part 33. The metallization layer 4 and the Au — Sn layer 5 are also referred to as a frame line surrounding the periphery of the light transmission unit 34. The junction 33, the metallization layer 4, and the Au — Sn layer 5 are also referred to as having a frame shape.
The glass member 30 has an upper surface 31 which is a top surface of the package 1, and a lower surface 32 including a bonding portion 33 bonded to the bonding surface 22 of the package substrate 2. For example, the glass member 30 is formed in a rectangular plate shape having a side length of 2mm to 30mm and a thickness of 50 μm to 3000 μm by using borosilicate glass, quartz glass, or the like.
As shown in fig. 1 to 3, a rectangular frame-shaped metallization layer 4 made of Au, Ti, Ni, or the like is formed on the bonding portion 33 of the lower surface 32. An Au — Sn layer 5 having a rectangular frame shape similar to the metallization layer 4 is formed on the metallization layer 4.
The metallization layer 4 is larger than the recess 21 of the package substrate 2, and is formed so as to surround the recess 21 and abut against the joint surface 22. The width of Au-Sn layer 5 is set to be 250 μm or less, the same as the width of metallization layer 4, or narrower than the width of metallization layer 4.
That is, the area surrounded by the frame (frame line) of the metallization layer 4 is larger than the opening area of the upper portion of the recess 21 of the package substrate 2. The frame (frame line) of the Au — Sn layer 5 has the same line width as the frame (frame line) of the metallization layer 4 or is narrower than the frame (frame line) of the metallization layer 4. In the present embodiment, the line width of the Au — Sn layer 5 is set to 250 μm or less.
Specifically, as shown in fig. 2, in the Au — Sn layer 5, two sides of a rectangle intersect at the corner 51 at 90 °, and the maximum width (maximum line width) L2 (the distance between the intersection of the two sides on the outer side and the intersection of the two sides on the inner side of the outline of the Au — Sn layer 5, that is, the maximum dimension in the direction in which the frame shape intersects in the circumferential direction) of the 4 corners 51 is larger than the width (line width) L1 of the portion other than the 4 corners 51.
However, the width L1 and the maximum width L2 are both 250 μm or less. When the width L1 and the maximum width L2 exceed 250 μm, stress due to the difference in linear expansion coefficient between the Au — Sn layer 5 and the glass member increases during cooling after reflow soldering in which the Au — Sn layer 5 is melted, and the Au — Sn layer 5 is peeled off from the glass member or the glass member is broken.
The width L1 and the maximum width L2 are preferably 50 μm or more. At this time, in the package 1 in which the package lid member 3 and the package substrate 2 are joined, since the joint between the package lid member 3 and the package substrate 2 is strong, the package lid member 3 does not fall off from the package substrate 2.
More preferably, the width L1 of the Au — Sn layer 5 except for the corner portions 51 (straight portions) may be set to 50 μm or more and 230 μm or less, and the maximum width L2 of the 4 corner portions 51 may be set to 70 μm or more and 250 μm or less.
The height (thickness) of the Au-Sn layer 5 can be set to, for example, 1 μm or more and 100 μm or less.
The light emitting element is accommodated in the recess 21 of the package substrate 2 described above. Next, the Au — Sn layer 5 on the lower surface 32 of the package lid member 3 is brought into contact with the bonding surface 22 of the package substrate 2. The package substrate 2 and the package lid member 3 are subjected to reflow soldering (heating) in a state where the Au — Sn layer 5 is in contact with the bonding surface 22. In this way, an Au — Sn solder (bonding layer 6) in which the Au — Sn layer 5 is melted is formed. The package substrate 2 and the package lid member 3 are joined by the Au — Sn solder (joining layer 6), and the package 1 is formed as shown in fig. 9.
[ method for manufacturing cover Member for Package ]
The package cover member 3 is manufactured, for example, as follows. A plurality of metallized layers 4 made of Au, Ti, Ni, or the like are formed on the surface of 1 glass member 30 (in the present embodiment, a plate material having a size of 20mm × 20 mm) by sputtering, plating, or the like (for example, 25 square frames each having an outer shape of 3mm in length and width are formed). Next, an Au — Sn paste was applied so as to form rectangular frames (for example, 25 square frames each having a length and a width of 3 mm) on each metallization layer 4.
That is, a plurality of metallization layers 4 having a rectangular (square) frame shape are formed on the surface of the glass member 30. Next, an Au — Sn layer having a rectangular (square) frame shape is formed on each metallization layer 4. The Au — Sn layer is formed by coating Au — Sn paste.
The metallization layer 4 is preferably formed by Au plating. The metallization layer 4 is formed in the same rectangular frame shape as the Au — Sn layer 5.
The Au — Sn paste for forming the Au — Sn layer 5 is, for example, a paste obtained by mixing an Au — Sn alloy powder and a flux so that the proportion of the flux is 10 mass% or more and 90 mass% or less, assuming that the Au — Sn paste is 100 mass%. The Au-Sn alloy powder contains Sn in an amount of, for example, 21 to 23 mass%, with the remainder being Au and unavoidable impurities. The flux is not particularly limited, and a general flux for solder can be used. For example, RA type, RMA type, halogen-free type flux, MSN type, AS1 type, AS2 type, or the like can be used.
On the metallized layer 4, Au-Sn paste is print-coated so as to form a coating film having a width of 50 μm or more and 250 μm or less and a thickness of 1 μm or more and 100 μm or less. The Au — Sn paste may be applied by discharge supply using a dispenser or the like.
Next, the glass member 30 printed with the Au — Sn paste is heated (reflow soldering). In the reflow step, for example, N is used2The coating film of the Au-Sn paste is heated in a non-oxidizing atmosphere such as an atmosphere. The heating temperature may be in the range of 280 to 350 ℃, preferably 280 to 330 ℃, and more preferably 280 to 300 ℃. The heating time may be in the range of 10 seconds to 120 seconds at the heating temperature. The heating time is preferably in the range of 20 seconds to 90 seconds, more preferably in the range of 30 seconds to 60 seconds. An example of suitable conditions is heating at 300 ℃ for 1 minute.
Thereby, the Au — Sn paste was melted. The melted Au — Sn stays on the metallization layer 4 and is cooled in this state, thereby forming the Au — Sn layer 5 having the same width as the metallization layer 4. Further, since the Au — Sn layer 5 formed includes the metallization layer 4, the composition thereof is slightly different from the Au — Sn paste, and is composed of a metal oxide having a Sn: 19 to 23 wt%, remainder: au and inevitable impurities.
Here, the linear expansion coefficient of the Au — Sn layer 5 formed by reflow soldering is different from the linear expansion coefficient of the glass member 30. That is, the shrinkage rate of the Au — Sn layer 5 by cooling is larger than that of the glass member. Thus, if the stress applied to the glass member 30 is large due to the shrinkage of the Au — Sn layer 5 during cooling, the Au — Sn layer 5 may be peeled off from the glass member 30 or a part of the glass member 30 may be peeled off.
In contrast, in the present embodiment, since the width of the Au — Sn layer 5 is 250 μm or less, the stress acting on the glass member 30 due to the shrinkage of the Au — Sn layer 5 during cooling is small. This suppresses separation of the Au — Sn layer 5 from the glass member 30 and breakage of the glass member 30.
The glass member 30 having the plurality of rectangular Au — Sn layers 5 formed thereon is divided into the plurality of Au — Sn layers 5, thereby forming the sealing cover member 3 shown in fig. 2 to 3. The package lid member 3 thus manufactured is bonded to the package substrate 2 as described above, thereby forming the package 1.
By using such a package cover member 3, the concave portion 21 of the package substrate 2 can be reliably sealed by the package cover member 3, and peeling and breakage of the package substrate 2 due to stress caused by contraction of the Au — Sn layer 5 can be suppressed.
Fig. 9 shows the package 1. The Au — Sn layer 5 is melted and then solidified to become the bonding layer 6. In the package 1, the package substrate 2 and the package lid member 3 are bonded to each other with the bonding layer 6 without a gap therebetween.
The present invention is not limited to the above embodiments, and various modifications can be made without departing from the scope of the elements of the present invention. The second to eighth embodiments will be described below, but the same features as those of the first embodiment will not be described. The metallization layer and the Au — Sn layer have a width equal to the width of the frame (frame line) or the frame shape.
Fig. 4 is a plan view showing the lid member for package 103 according to the second embodiment. In the second embodiment, an Au — Sn layer 5A is provided instead of the Au — Sn layer 5. In the Au — Sn layer 5A, the corners 51A of the rectangular frame shape are chamfered. Therefore, the maximum width L3 of the 4 corner portions 51A (the maximum dimension in the direction along the circumferential direction of the corner portions of the frame constituting the Au — Sn layer 5A) is smaller than the width L1 of the portion other than the 4 corner portions 51A. That is, the width of any portion of the Au-Sn layer 5A is 250 μm or less.
For example, in the Au — Sn layer 5A, the width L1 of the portion (straight portion) other than the corner 51A is set to 50 μm or more and 250 μm or less, and the maximum width L3 of 4 corners 51A is set to 30 μm or more and 130 μm or less. The Au — Sn layer 5A having such a shape can also be formed by the following method.
The metallization layer 4 may be formed to have the same shape as the Au — Sn layer 5A and chamfered at the corner portions, and the Au — Sn paste may be applied to the metallization layer to have the chamfered corner portions and reflowed to form the Au — Sn layer 5A. Further, an Au — Sn layer may be formed in a rectangular frame shape without chamfering on the metallization layer 4 formed in a rectangular frame shape without chamfering, and then the Au — Sn layer 5A may be formed by chamfering the corner 51A of the Au — Sn layer.
The stress is likely to concentrate on the corner 51A of the Au — Sn layer 5A due to the shrinkage of the Au — Sn layer 5A during cooling. In the second embodiment, since the corner 51A of the Au — Sn layer 5A, on which stress due to shrinkage during cooling of the Au — Sn layer 5A tends to concentrate, is chamfered, stress with respect to the package lid member 103 can be further reduced. Further, since the maximum width L3 of the corner portion 51A in the Au — Sn layer 5A is smaller than the width L1 of the Au — Sn layer 5A except for the corner portion 51A, stress in the corner portion 51A against the package cover member 3 can be reliably reduced.
Fig. 5 is a plan view showing a cover member 203 for package according to a third embodiment. In the third embodiment, an Au — Sn layer 5B is provided instead of the Au — Sn layer 5. In the Au — Sn layer 5B, 4 corners 51B of the rectangular frame shape are cut into a circular shape. Therefore, the maximum width L4 of the 4 corner portions 51B is smaller than the width L1 of the portion other than the 4 corner portions 51B. That is, the width of any portion of the Au-Sn layer 5B is 250 μm or less.
For example, the width L1 of the Au — Sn layer 5B except for the corner portions 51B (straight portions) is set to 50 μm or more and 230 μm or less, and the maximum width L4 of the 4 corner portions 51B is set to 30 μm or more and 130 μm or less.
The Au — Sn layer 5B having such a shape can be formed by the following method. The metallization layer 4 having a notch may be formed in the same shape as the Au — Sn layer 5B, and the Au — Sn paste may be applied to the metallization layer in the same shape as the notch and reflowed to form the Au — Sn layer 5B. Similarly, an Au — Sn layer may be formed in a rectangular frame shape without a notch on metallization layer 4 formed in a rectangular frame shape without a notch, and then Au — Sn layer 5B may be formed by cutting the inside of corner 51B of the Au — Sn layer into a circular shape.
Fig. 6 is a plan view showing a package cover member 303 according to the fourth embodiment. In the fourth embodiment, an Au — Sn layer 5C is provided instead of the Au — Sn layer 5. In the Au — Sn layer 5C, the maximum width L5 of the two sides intersecting at the corner 51C is set to be substantially half the width L1 of the Au — Sn layer 5C except for the corner 51C (straight portion). Therefore, on both sides where the corner portions 51C meet, a region (portion) having a width substantially half of the width L1 of the straight portion is provided. In consideration of the reduction in the adhesiveness, the distance L6 of a region having a width substantially half the width L1 of the straight portion is set to be in the range of 40 μm to 125 μm on one of the two sides where the corner portions 51C intersect.
Therefore, the maximum width L5 of the 4 corner portions 51C of the Au — Sn layer 5C is smaller than the width L1 of the straight portion of the Au — Sn layer 5C. That is, the width of any portion of the Au-Sn layer 5C is 250 μm or less.
For example, in the Au — Sn layer 5C, the width L1 of the straight portion is set to 50 μm or more and 250 μm or less, and the maximum width L5 of the 4 corner portions 51C is set to 30 μm or more and 130 μm or less.
Fig. 7 is a plan view showing a lid member 403 for package according to a fifth embodiment. In the fifth embodiment, instead of the Au — Sn layer 5, a frame-shaped first Au — Sn layer 5D and a frame-shaped second Au — Sn layer 5E formed with a gap inside the first Au — Sn layer 5D are provided. The width L1 of the first Au — Sn layer 5D and the maximum width (maximum line width) L2 in the corner 51, and the width L7 of the second Au — Sn layer 5E and the maximum width (maximum line width) L8 in the corner 51E are set to 250 μm or less.
The first Au — Sn layer 5D is the same as the Au — Sn layer 5 of the first embodiment. In the second Au-Sn layer 5E, the width L7 of the straight portion is set to be 50 μm or more and 250 μm or less, and the maximum width L8 of the 4 corner portions 51E is set to be 70 μm or more and 250 μm or less. The distance L9 between the gaps between the first Au — Sn layer 5D and the second Au — Sn layer 5E is set to 10 μm or more and 500 μm or less.
By setting the distance L9 of the gap within the above range, it is possible to suppress the Au — Sn layers 5D and 5E from being peeled off from the package lid member 403 due to the shrinkage of the melted Au — Sn when the Au — Sn layers 5D and 5E are manufactured separately. In the fifth embodiment in which the Au — Sn layers 5D and 5E are formed in a double manner, the bonding range by the Au — Sn layers can be expanded as compared with the package lid members of the first to fourth embodiments, and therefore the bonding strength when the package substrate 2 is sealed with the package lid member 403 can be improved.
In the above embodiments, the Au — Sn layers are formed in a rectangular frame shape, but the invention is not limited thereto. For example, the frame-shaped Au — Sn layer may have a triangular shape, a hexagonal shape, or a circular shape without corners.
Fig. 8 is a plan view showing a sealing cover member 503 according to a sixth embodiment. In the sixth embodiment, the package cover member 503 has a circular glass member 3F instead of the rectangular glass member 30, and has a circular frame-shaped metallization layer (not shown) and a circular frame-shaped Au — Sn layer 5F instead of the rectangular frame-shaped metallization layer 4 and the Au — Sn layer 5. The glass member 3F has a light transmission section 534 at the center and a circular frame-shaped joint section 533 surrounding the light transmission section 534. On the lower surface 32F of the glass member 3F, the Au — Sn layer 5F is formed in a circular shape without corners at the bonding portion 533. The width L10 of the Au-Sn layer 5F is 250 μm or less. For example, the width L10 of the Au-Sn layer 5F is set to be 50 μm or more and 250 μm or less.
Fig. 10 is a cross-sectional view showing a package 701 according to the seventh embodiment. In the package 701, the recess 731 is provided in the glass member 730 of the sealing cover member 703 instead of the sealing substrate 702. The sealing cover member 703 includes a glass member 730, a frame-shaped metallization layer 704 formed on the glass member 730, and a frame-shaped Au — Sn layer formed on the metallization layer 704. The package body 701 is formed by bonding the package cover member 703 to the flat package substrate 702 via a bonding layer 706, and the bonding layer 706 is formed by melting and solidifying an Au — Sn layer.
Fig. 11 is a plan view showing a sealing cover member 803 according to the eighth embodiment. In the eighth embodiment, a metallized layer 4G having a circular arc-shaped corner portion is provided in place of the metallized layer 4, and an Au — Sn layer 5G having a circular arc-shaped corner portion 51G is provided in place of the Au — Sn layer 5. In the Au — Sn layer 5G, the entire portion including the corner portion 51G is formed to have the same (constant) width L8.
Examples
In the sealing lid members according to examples 1 and 2 and comparative example 1, Au — Sn layers having different widths were formed on a plate-shaped glass member. The lid member for package according to examples 1 and 2 and comparative example 1 will be described. The width of the Au — Sn layer in each example is shown in table 1.
In examples 1 and 2 and comparative example 1, Au plating was performed on the surface of a rectangular glass member of 20mm × 20mm to form 25 metallized layers. The metallization layer had a rectangular frame shape of the same size as the Au — Sn layer described in table 1, and had a thickness of 0.1 μm.
On each metallization layer, Au — Sn paste was applied in the same rectangular frame shape as the metallization layer. The Au — Sn alloy powder and the flux were mixed at a flux ratio of 10 mass% to obtain an Au — Sn paste. The Au — Sn alloy powder (Au-22 mass% Sn alloy powder) contains 22 mass% of Sn, with the remainder being Au and unavoidable impurities. The flux uses the RA type.
Specifically, in example 1 and comparative example, in order to form an Au — Sn layer having a package size 3030 (length 3.0mm × width 3.0mm) of each size shown in table 1 in the shape of the eighth embodiment shown in fig. 11, an Au — Sn paste was applied by screen printing on a glass member using a mesh mask for printing having a thickness of 30 μm.
In example 2, in order to form an Au — Sn layer having a package size 3030 (length 3.0mm × width 3.0mm) having the dimensions shown in table 1 in the shape of the second embodiment shown in fig. 4, an Au — Sn paste was applied by screen printing on a glass member using a mesh mask for printing having a thickness of 30 μm.
Then, the glass member coated with the Au — Sn paste was subjected to reflow soldering, thereby forming 25 frame-shaped Au — Sn layers on the glass member. In the reflow soldering, at N2The coating film of the Au-Sn paste was heated at 300 ℃ for 1 minute in an atmosphere. In each of the Au-Sn layers thus formed, the width of the portion (straight portion) other than the corner portion and the maximum width of the corner portion were the values shown in Table 1, and the thickness of the Au-Sn layer was 4.7. mu.m.
In examples 1 and 2 and comparative example 1, the Au — Sn layers of the 25 samples thus obtained were observed, and the separation from the glass member was evaluated based on the inside-outside penetration rate of the Au — Sn layers.
(evaluation of peeling: internal/external penetration Rate of Au-Sn layer)
The Au — Sn layer formed on the metallization layer was observed from the upper surface with an optical microscope (10 times). The sample having a portion continuously peeled from the outer side of the Au-Sn layer to the inner side of the Au-Sn layer was judged as defective. The sample having no peeled portion was judged to be good. Then, the ratio of the number of samples judged to be good was calculated in the Au — Sn layers of 25 samples formed on the glass member, and the value thereof was shown in the item "peeling evaluation (%)" in table 1.
[ Table 1]
Figure BDA0002969426670000111
The peeling evaluation of examples 1 and 2 in which the width of the Au-Sn layer was 250 μm or less was 92% or more. In particular, in example 2 in which the width of the corner portion was 100 μm and the width was equal to or smaller than the linear portion, the peel evaluation was 96%, and the peel evaluation was particularly high. On the other hand, in comparative example 1, since the width of the Au-Sn layer was large and 425 μm, almost half of the Au-Sn layer was peeled off, and the peeling evaluation was low and was 48%.
Therefore, it was found that when the width of the Au-Sn layer is 250 μm or less, the Au-Sn layer can be suppressed from peeling. Further, it is found that if the width of the corner portion is smaller than the width of the straight portion, the Au — Sn layer can be more suppressed from peeling.
Industrial applicability
According to the present embodiment, breakage of the glass package lid member bonded to the package substrate and peeling of the Au — Sn layer provided in the package lid member are suppressed. Therefore, the package cover member and the package according to the present embodiment can be suitably applied to a semiconductor device and a light emitting device in which a light emitting element such as a semiconductor Laser (LD) or an LED is sealed in a package.
Description of the symbols
1. 701-package, 2, 702-package substrate, 6, 706-bonding layer, 21, 721, 731-recess, 22-bonding surface, 3, 103, 203, 303, 403, 503, 703, 803-package cover member, 4G, 704-metallization layer, 5A, 5B, 5C, 5F, 5G-Au-Sn layer, 51A, 51B, 51C, 51E, 51G-corner, 5D-first Au-Sn layer, 5E-second Au-Sn layer, 30, 3F, 730-glass member, 31-upper surface, 32F-lower surface, 33, 533-bonding portion, 34, 534-light transmission portion.

Claims (11)

1. A lid member for a package bonded to a package substrate, the lid member for a package comprising:
a glass member having a bonding portion provided in a planar frame shape and a light transmission portion provided inside the bonding portion;
one or more metallization layers formed in a frame shape on the bonding portion of the glass member; and
and one or more Au-Sn layers provided on the metallization layer and having a frame shape with a width of 250 [ mu ] m or less.
2. The cover member for package as set forth in claim 1,
the frame shape of the one or more Au-Sn layers has one or more corner portions, and the maximum width of the corner portions is smaller than the width of the frame shape at a portion of the Au-Sn layers other than the corner portions.
3. The cover member for package as set forth in claim 2,
the corners are chamfered.
4. The cover member for packaging according to any one of claims 1 to 3,
the one or more Au-Sn layers include a first Au-Sn layer and a second Au-Sn layer, and the second Au-Sn layer is provided inside the first Au-Sn layer with a gap.
5. The cover member for packaging according to any one of claims 1 to 4,
the thickness of the glass member is 50 μm or more and 3000 μm or less.
6. The cover member for packaging as claimed in any one of claims 1 to 5,
the width of the Au-Sn layer is 50 [ mu ] m or more.
7. The cover member for packaging according to any one of claims 1 to 6,
the width of the Au-Sn layer is 230 [ mu ] m or less.
8. The cover member for package as set forth in claim 2 or 3,
the maximum width of the corner portion is 30 μm or more and 130 μm or less.
9. The cover member for packaging according to any one of claims 1 to 8,
the glass member is flat.
10. The cover member for packaging according to any one of claims 1 to 9,
the glass component is box-shaped.
11. A package is characterized in that a plurality of semiconductor chips are mounted on a substrate,
the package includes at least one package substrate and the package lid member according to any one of claims 1 to 10, wherein the package lid member and the package substrate are bonded by a bonding layer formed by melting and curing the Au — Sn layer.
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