CN112668232A - Method, device, equipment and medium for acquiring SEE section caused by nuclear reaction - Google Patents
Method, device, equipment and medium for acquiring SEE section caused by nuclear reaction Download PDFInfo
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Abstract
The disclosure provides a method, a device, equipment and a medium for acquiring SEE cross section caused by nuclear reaction. The method for acquiring the SEE section caused by the nuclear reaction is applied to the detection of the single event effect caused by the nuclear reaction of the microelectronic device, and comprises the following steps: acquiring a secondary particle LET spectrum; obtaining a heavy ion SEE section; and acquiring the SEE section caused by the nuclear reaction according to the LET spectrum of the secondary particles and the SEE section of the heavy ions. Therefore, the method for acquiring the SEE cross section caused by the nuclear reaction in the embodiment of the disclosure can realize the theoretical prediction of the SEE cross section caused by the nuclear reaction estimated by the heavy ion SEE cross section, is not only suitable for low LET threshold devices with dominant action on the nuclear reaction of protons, neutrons and the like with silicon, but also suitable for general situations such as high LET threshold devices with dominant action on the nuclear reaction of high Z materials, and solves the technical problem that the traditional BGR method cannot acquire the SEE cross section caused by the precise nuclear reaction aiming at the high LET threshold devices.
Description
Technical Field
The present disclosure relates to the field of computer technologies, and in particular, to a method, an apparatus, a device, and a medium for acquiring an SEE cross section caused by a nuclear reaction.
Background
Since the Single Event Effect (SEE for short) of microelectronic devices caused by space radiation environment is one of the important causes of abnormal operation and failure of spacecraft, microelectronic devices applied in the field of aerospace must be examined through Single Event Effect tests.
In the prior art, experiments aiming at heavy ion single event effect generally realize acquisition of heavy ion SEE section and error rate based on BGR (burst Generation Rate) method. The basis of the BGR method is the assumption that protons react with the sensitive region, which is made of silicon, and thus the BGR method cannot predict the contribution of nuclear reactions between protons and high Z material to the SEE cross section. Specifically, because the LET value of the secondary particles generated by nuclear reaction of protons and high-Z material is higher, the nuclear reaction between protons and high-Z material tends to play a dominant role in the SEE test for high-LET threshold devices, so that the present BGR method cannot predict the SEE cross section of the high-LET threshold device.
Disclosure of Invention
Technical problem to be solved
In order to solve the technical problem that a conventional SEE section prediction method cannot acquire an accurate proton SEE section for a high LET threshold device in the prior art, the disclosure provides a method, a device, equipment and a medium for acquiring the SEE section caused by nuclear reaction.
(II) technical scheme
One aspect of the present disclosure provides a method for obtaining an SEE cross section caused by a nuclear reaction, which is applied to detecting a single event effect caused by a nuclear reaction of a microelectronic device, and includes: acquiring a secondary particle LET spectrum; obtaining a heavy ion SEE section; and acquiring the SEE section caused by the nuclear reaction according to the LET spectrum of the secondary particles and the SEE section of the heavy ions.
According to an embodiment of the present disclosure, acquiring a nuclear reaction-induced SEE cross-section from a secondary particle LET spectrum and a heavy ion SEE cross-section includes: obtaining a first SEE cross section; obtaining a second SEE cross section; acquiring SEE cross sections caused by nuclear reaction according to the first SEE cross sections and the second SEE cross sections; wherein the first SEE cross-section is a SEE cross-section resulting from a nuclear reaction corresponding to a nuclear reaction of the first material, and the second SEE cross-section is a sum of SEE cross-sections resulting from nuclear reactions corresponding to nuclear reactions of a plurality of materials in the second material.
According to an embodiment of the present disclosure, obtaining a first SEE cross-section includes: acquiring a first fluence parameter corresponding to a nuclear reaction of the first material according to the LET spectrum of the secondary particles; determining the occurrence frequency of the first SEE corresponding to a preset section rule according to the heavy ion SEE section and the first fluence parameter; and acquiring a first SEE section according to the occurrence frequency of the first SEE.
According to an embodiment of the present disclosure, obtaining a second SEE cross-section includes: acquiring a second fluence parameter corresponding to the nuclear reaction of the second material according to the LET spectrum of the secondary particles; determining the second SEE occurrence frequency corresponding to the preset section rule according to the heavy ion SEE section and the second fluence parameter; and acquiring a second SEE section according to the occurrence frequency of the second SEE.
According to an embodiment of the present disclosure, acquiring a nuclear reaction-induced SEE cross-section from a first SEE cross-section and a second SEE cross-section includes: and summing the first SEE cross section and the second SEE cross section to obtain the SEE cross section caused by the nuclear reaction.
According to an embodiment of the present disclosure, the first material is silicon; the second material includes at least one of tungsten, copper, titanium, and aluminum.
According to an embodiment of the present disclosure, acquiring a secondary particle LET spectrum includes: the LET spectrum of the secondary particles corresponding to the first material is determined by the particle transport simulation rule.
According to an embodiment of the present disclosure, determining a secondary particle LET spectrum corresponding to a first material by a particle transport simulation rule includes: obtaining the number of simulated secondary particles and a simulated LET value of the nuclear reaction of the first material through a particle transport simulation rule; determining the number of simulated secondary particles corresponding to a preset LET value interval according to the number of the simulated secondary particles and the simulated LET value; and determining a secondary particle LET spectrum based on the characteristic parameters of the first material and the simulated secondary particle count.
According to an embodiment of the present disclosure, obtaining a heavy ion SEE cross-section comprises: based on the heavy ion SEE experiment, the heavy ion SEE section is obtained.
According to an embodiment of the present disclosure, obtaining a heavy ion SEE cross-section based on a heavy ion SEE experiment comprises: detecting the number of single event effects generated by nuclear reaction between the heavy ion beam current and the first material; and determining the SEE section of the heavy ions according to the particle fluence and the single particle effect number of the heavy ion beam current.
Another aspect of the present disclosure provides an apparatus for acquiring an SEE cross section caused by a nuclear reaction, which is applied to detecting a single event effect caused by a nuclear reaction of a microelectronic device, and includes a first acquisition module, a second acquisition module, and a third acquisition module. The first acquisition module is used for acquiring a secondary particle LET spectrum; the second acquisition module is used for acquiring a heavy ion SEE section; and the third acquisition module is used for acquiring the SEE section caused by the nuclear reaction according to the LET spectrum of the secondary particles and the SEE section of the heavy ions.
Another aspect of the disclosure provides an electronic device comprising one or more processors and storage for storing one or more programs. Wherein the one or more programs, when executed by the one or more processors, cause the one or more processors to perform the method as above.
Another aspect of the disclosure provides a computer-readable medium having executable instructions stored thereon. The instructions, when executed by the processor, cause the processor to perform the method as described above.
Another aspect of the disclosure provides a computer program comprising computer executable instructions for implementing a method as described above when executed.
(III) advantageous effects
The disclosure provides a method, a device, equipment and a medium for acquiring SEE cross section caused by nuclear reaction. The method for acquiring the SEE section caused by the nuclear reaction is applied to the detection of the single event effect caused by the nuclear reaction of the microelectronic device, and comprises the following steps: acquiring a secondary particle LET spectrum; obtaining a heavy ion SEE section; and acquiring the SEE section caused by the nuclear reaction according to the LET spectrum of the secondary particles and the SEE section of the heavy ions. Therefore, the method for acquiring the SEE cross section caused by the nuclear reaction in the embodiment of the disclosure can realize the theoretical prediction of the SEE cross section caused by the nuclear reaction estimated by the heavy ion SEE cross section, is not only suitable for low LET threshold devices with dominant action on the nuclear reaction of protons, neutrons and the like with silicon, but also suitable for general situations such as high LET threshold devices with dominant action on the nuclear reaction of high Z materials, and solves the technical problem that the traditional BGR method cannot acquire the SEE cross section caused by the precise nuclear reaction aiming at the high LET threshold devices.
Drawings
FIG. 1A schematically illustrates a schematic diagram of a silicon-sensitive region single event effect, according to an embodiment of the present disclosure;
FIG. 1B schematically illustrates a schematic diagram of a single event effect for a high Z-material metal wiring layer and silicon sensitive regions, in accordance with an embodiment of the disclosure;
FIG. 2 schematically illustrates a flow chart of a method of obtaining a nuclear reaction-induced SEE cross section according to an embodiment of the present disclosure;
fig. 3A schematically illustrates a graph of a heavy ion SEU cross section with a silicon layer equivalent thickness t of 2.1 μm compared to a weibull fit curve according to an embodiment of the disclosure;
fig. 3B schematically illustrates a graph of a heavy ion SEU cross section with a silicon layer equivalent thickness t of 0.4 μm compared to a weibull fit curve according to an embodiment of the disclosure;
fig. 3C schematically illustrates a graph of a heavy ion SEU cross section with a silicon layer equivalent thickness t of 1.55 μm compared to a weibull fit curve according to an embodiment of the disclosure;
fig. 3D schematically illustrates a graph of a heavy ion SEU cross section with a silicon layer equivalent thickness t of 2.3 μm compared to a weibull fit curve according to an embodiment of the disclosure;
FIG. 4A schematically illustrates a plot of proton energy versus predicted SEU cross-section for a first device according to an embodiment of the present disclosure;
FIG. 4B schematically illustrates a plot of proton energy versus predicted SEU cross-section for a second device according to an embodiment of the present disclosure;
FIG. 4C schematically illustrates a plot of proton energy versus predicted SEU cross-section for a third device according to an embodiment of the present disclosure;
FIG. 4D schematically illustrates a plot of proton energy versus predicted SEU cross-section for a fourth device according to an embodiment of the present disclosure;
figure 5A schematically illustrates a graph of a heavy ion SEL cross-section at 0.09 μm equivalent thickness t of the tungsten layer versus a weibull fit curve according to an embodiment of the disclosure;
figure 5B schematically shows a graph of a heavy ion SEL cross-section at 0.32 μm equivalent thickness t of the tungsten layer versus a weibull fitted curve according to an embodiment of the disclosure.
Fig. 6 schematically illustrates a block diagram of an acquisition apparatus of a nuclear reaction-induced SEE cross section according to an embodiment of the present disclosure.
Fig. 7 schematically shows an architecture diagram of an electronic device for implementing the above-described acquisition method according to an embodiment of the present disclosure.
Detailed Description
Hereinafter, embodiments of the present disclosure will be described with reference to the accompanying drawings. It should be understood that the description is illustrative only and is not intended to limit the scope of the present disclosure. In the following detailed description, for purposes of explanation, numerous specific details are set forth in order to provide a thorough understanding of the embodiments of the disclosure. It may be evident, however, that one or more embodiments may be practiced without these specific details. Moreover, in the following description, descriptions of well-known structures and techniques are omitted so as to not unnecessarily obscure the concepts of the present disclosure.
The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the disclosure. The terms "comprises," "comprising," and the like, as used herein, specify the presence of stated features, steps, operations, and/or components, but do not preclude the presence or addition of one or more other features, steps, operations, or components.
All terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art unless otherwise defined. It is noted that the terms used herein should be interpreted as having a meaning that is consistent with the context of this specification and should not be interpreted in an idealized or overly formal sense.
Where a convention analogous to "at least one of A, B and C, etc." is used, in general such a construction is intended in the sense one having skill in the art would understand the convention (e.g., "a system having at least one of A, B and C" would include but not be limited to systems that have a alone, B alone, C alone, a and B together, a and C together, B and C together, and/or A, B, C together, etc.). Where a convention analogous to "A, B or at least one of C, etc." is used, in general such a construction is intended in the sense one having skill in the art would understand the convention (e.g., "a system having at least one of A, B or C" would include but not be limited to systems that have a alone, B alone, C alone, a and B together, a and C together, B and C together, and/or A, B, C together, etc.).
The Single Event Effect (SEE for short) refers to a phenomenon that a Single high-energy particle (such as proton, neutron, or heavy ion) impacts a sensitive region and a nearby region of a microelectronic device, a large number of electron-hole pairs are generated on a track of the particle passing through the sensitive region of the device through direct or indirect ionization, and are collected by a circuit sensitive node, and when the collected charge exceeds a certain critical charge, the abnormality of the logic state, output waveform, function, performance, and the like of the device or the device is destroyed. The Single Event effect may include Single Event Upset (SEU) and Single Event Latch-up (SEL).
Heavy ions induce a single event effect by direct ionization in the semiconductor material, a mechanism known as direct ionization. The SEE cross section of a heavy ion is closely related to the Linear Energy Transfer (LET) of the heavy ion in the semiconductor material. Linear energy transport LET is the energy lost by heavy ions per unit path, requiring an average energy of 3.6eV per electron-hole pair ionized, and is therefore used to characterize the ionization capacity of heavy ions in semiconductor materials. Heavy ion SEE test to obtain the LET-sigma of heavy ionsHIThe relationship curve can be generally described by a Weibull (i.e., Weibull) expression, which is embodied as a Weibull fitting curve.
Neutrons are not charged and cannot initiate a single event effect through direct ionization, but when entering a semiconductor material, the neutrons may react with the material to generate heavy ions such as alpha particles and recoil nuclei, and each ion product can ionize an electron-hole pair along the path of the heavy ions, so that the single event effect can be indirectly initiated like the heavy ions, and the mechanism for initiating the single event effect is called an indirect ionization mechanism. Protons have a small ionization capacity and generally cannot induce a single event effect by direct ionization, but also by nuclear reaction with semiconductor materials, similar to neutrons.
Specifically, as shown in fig. 1A, an incident proton or neutron beam E strikes a sensitive region 100 of the microelectronic device, and nuclear reaction occurs between the incident proton or neutron beam E and a material of the sensitive region 100, so that secondary particles such as α particles and recoil nuclei are generated, and the secondary particles can ionize a large number of electron-hole pairs, thereby initiating a single event effect. The thickness of the sensitive region 100 is t, and the material of the sensitive region 100 may be silicon Si.
In the prior art, the BGR method is a method which is widely applied and used for predicting the proton SEE section and the error rate by the heavy ion SEE section. Based on the generally short range of recoil nuclei produced by the reaction of protons with silicon nuclei, the BGR method may assume that all the energy of the recoil nuclei produced by the nuclear reaction of protons with a sensitive region made of silicon, having a thickness t', is deposited in the sensitive region.
Thus, the proton SEE cross section for the BGR method is:
wherein E isr＝t′nSiL，BGR(E，Er) Is that the number of Si atoms in unit volume and the recoil energy are more than ErThe product of the generated cross sections of the secondary particles of (a); wherein eta is collection efficiency, and is generally 0.5; t' is the thickness of the sensitive area, and the value is 1-6 μm, and is usually 2 μm.
As shown in fig. 1B, a layer 101 of high-Z material (e.g., Cu, Ti, W, etc.) is often used as a metal wiring layer above the sensitive region 100. However, the BGR method is based on the assumption that protons react with the sensitive region 100 and the sensitive region 100 is made of silicon, so the BGR method cannot predict the contribution of nuclear reaction between protons and the high Z material layer 101 to the SEE cross section.
Specifically, since the LET value of the secondary particles generated by nuclear reaction of protons with the high-Z material layer 101 is higher, the nuclear reaction between protons and the high-Z material layer 101 tends to play a dominant role in the SEE test for the high-LET threshold device, so that the present BGR method cannot predict the SEE cross section of the high-LET threshold device.
In order to solve the technical problem that a traditional SEE cross section prediction method in the prior art cannot acquire an accurate SEE cross section caused by nuclear reaction aiming at a high LET threshold device, the disclosure provides a method, a device, equipment and a medium for acquiring the SEE cross section caused by the nuclear reaction. Based on the mechanism that secondary heavy ions generated by nuclear reaction induce single event effect in the device, the method for predicting the SEE section caused by nuclear reaction by the SEE section of heavy ions is established.
As shown in fig. 2, an aspect of the present disclosure provides a method for obtaining an SEE cross section caused by a nuclear reaction, which is applied to the detection of a single event effect caused by a nuclear reaction of a microelectronic device, and includes steps S201 to S203.
In step S201, a secondary particle LET spectrum is acquired;
in step S202, a heavy ion SEE cross section is acquired;
in step S203, a SEE cross section resulting from the nuclear reaction is acquired from the secondary particle LET spectrum and the heavy ion SEE cross section.
The LET spectrum of the secondary particles is the distribution of LET values of the secondary particles generated by nuclear reaction between incident particles and semiconductor materials, reflects the indirect ionization capacity of the incident particles, and is a bridge for predicting SEE sections of particles such as protons and neutrons through nuclear reaction by using the SEE sections of heavy ions.
The SEE section is used for predicting important data of the single event error rate of the microelectronic device in a space radiation environment. As shown in fig. 1A and fig. 1B, when a heavy ion beam is incident on the sensitive region 100, a corresponding heavy ion single event effect may be generated, and accordingly, a corresponding heavy ion SEE cross section may be obtained.
Therefore, the method for acquiring the SEE cross section caused by the nuclear reaction in the embodiment of the disclosure can realize the theoretical prediction of the SEE cross section caused by the nuclear reaction estimated by the heavy ion SEE cross section, is not only suitable for low LET threshold devices with dominant action on the nuclear reaction of silicon such as protons and neutrons, but also suitable for general situations such as high LET threshold devices with dominant action on the nuclear reaction of high Z materials, and solves the technical problem that the traditional BGR method cannot acquire the SEE cross section caused by the precise nuclear reaction for the high LET threshold devices.
As shown in fig. 2, according to the embodiment of the present disclosure, acquiring the LET spectrum of the secondary particle in step S201 includes: the LET spectrum of the secondary particles corresponding to the first material is determined by the particle transport simulation rule.
According to an embodiment of the present disclosure, determining a secondary particle LET spectrum corresponding to a first material by a particle transport simulation rule includes: obtaining the number of simulated secondary particles and a simulated LET value of nuclear reaction of incident particles and a first material through a particle transport simulation rule; determining the number of simulated secondary particles corresponding to a preset LET value interval according to the number of the simulated secondary particles and the simulated LET value; and determining a secondary particle LET spectrum based on the characteristic parameters of the first material and the simulated secondary particle count.
In the nuclear reaction between the particle beam and the bulk material of the semiconductor, the contribution of the nuclear reaction with the silicon material to the SEE cross section is considered. The technical solution of the embodiment of the present disclosure is further described below by taking the sensing region material as silicon and the incident particle as proton.
Note that, for a lower LET threshold device that is dominated by nuclear reactions of protons, neutrons, etc. with silicon nuclei, this portion of the SEE cross section may be considered to be the entire SEE cross section, given the contribution of nuclear reactions of protons, neutrons, etc. with the semiconductor host material to the SEE cross section.
Simulation of software vs. N with Geant4inThe proton is incident to the silicon layer with the thickness of H, the number of the simulated particles of the secondary particles generated by the reaction of the proton and the silicon nucleus and the simulated LET value are recorded, and the LET value is counted and calculated
The number of secondary particles in the interval Δ N, i.e. the number of simulated secondary particles.
Thus, the secondary particle LET spectrum in embodiments of the present disclosure is:
wherein n isSiIs the number of Si atoms in a unit volume, L represents the abbreviation of LET, and Δ L is the length of the small interval of the LET value. Wherein the characteristic parameters of the first material are the thickness H of the silicon layer and the number n of silicon atoms per unit volumeSiAnd the like, which are related to the properties of the first material itself.
It should be noted that the secondary particle LET spectrum can be calculated by a Geant4 simulation, and the particle transport simulation rule is implemented based on a Geant4 simulation.
Geant4 is based on the Monte Carlo (Monte Carlo) algorithm, an applied simulation algorithm for processing particle-substance interactions. The method can be used for constructing complex detector geometric structures, can process various particles, has a wide energy range, and is very rich in physical models which can be selected by users. Wherein, Geant4 can also trace the particle track and display it through the visualization tool, and can record the relevant parameters of user's interest in the particle transportation process. At present, Geant4 has been widely used in many fields such as high-energy physics, nuclear physics, accelerator physics, radiation protection, nuclear medicine, space detection, space radiation effect, etc.
According to an embodiment of the present disclosure, obtaining a heavy ion SEE cross section at step S202 includes: based on the heavy ion SEE experiment, the heavy ion SEE section is obtained.
When the microelectronic device is subjected to a heavy ion SEE experiment, 4-5 heavy ion beam currents with different LET values are usually selected to irradiate the microelectronic device, and then Weibull fitting is carried out on the obtained heavy ion SEE section. The heavy ion SEE section of any heavy ion beam with LET value L when irradiating the microelectronic device can be obtained through the Weibull expression obtained by fitting, namely sigmaHI(L)。
According to an embodiment of the present disclosure, obtaining a heavy ion SEE cross-section based on a heavy ion SEE experiment comprises: detecting the number of single event effects generated by nuclear reaction between the heavy ion beam current and the first material; and determining the SEE section of the heavy ions according to the particle fluence and the single particle effect number of the heavy ion beam current.
Heavy ions need to be generated by a mechanism in which direct ionization in the semiconductor material induces a single event effect, which is also referred to as a direct ionization mechanism. Because of the small ionization capacity of protons, a single event effect cannot be triggered by direct ionization, but when the protons enter a semiconductor material (such as a silicon material), nuclear reaction may occur between the protons and the semiconductor material to generate heavy ions such as alpha particles and recoil nuclei, and each ion product can be ionized into an electron-hole pair along a path, so that the single event effect can be indirectly triggered like the heavy ions, and the mechanism for triggering the single event effect is called an indirect ionization mechanism.
Therefore, the cross section of the heavy ion SEE corresponding to the indirect ionization mechanism, i.e., σ, described belowHI(L) is:
wherein N isSEEThe number of single event effects that occur; c is the number of microelectronic device units, such as the number of Static Random-Access Memory (SRAM) storage units (which can be understood as storage capacity, in bit); phi is incident particle fluence in cm-2)。
According to an embodiment of the present disclosure, obtaining a first SEE cross-section includes: acquiring a first fluence parameter corresponding to a nuclear reaction between the incident particle and the first material according to the LET spectrum of the secondary particle; determining the occurrence frequency of the first SEE corresponding to a preset section rule according to the heavy ion SEE section and the first fluence parameter; and acquiring a first SEE section according to the occurrence frequency of the first SEE.
According to the definition of the LET spectrum of the secondary particles, the LET value of the secondary particles generated by nuclear reaction between the proton beam and the first material (such as silicon Si material) layer with the thickness t is in the interval
The number of (A) is:
wherein the proton beam with S is vertically incident to the surface area of the microelectronic device.
From equation (4) above, the fluence of heavy ions incident normal to the microelectronic device (i.e., the first fluence parameter described above) can be determined as:
wherein L is the LET value of the microelectronic device, nSiIs the number of Si nuclei in a unit volume, E is the energy of the incident proton beam, phi (in cm)-2) Is the fluence of the incident proton beam.
According to the definition of the SEE cross section, based on the heavy ion SEE cross section and the first fluence parameter as in the above equation (5), the incident heavy ion beam current can cause the first single event effect of the microelectronic device to occur with the following number:
wherein C is the number of units of the microelectronic device.
It should be noted that the preset section rule may be understood as the definition rule of the SEE section.
Based on the number of single event effect occurrences defined by the above equation (6), when all secondary particles with LET values are considered, the corresponding first proton SEE cross section (i.e. first SEE cross section) of the silicon nuclear reaction of the microelectronic device is:
the above equation (7) is written by fractional integration as:
wherein the content of the first and second substances,
i.e. the cross-section generated by secondary particles having a LET value above L.
According to an embodiment of the present disclosure, obtaining a second SEE cross-section includes: acquiring a second fluence parameter corresponding to a nuclear reaction between the incident particle and a second material according to the LET spectrum of the secondary particle; determining the second SEE occurrence frequency corresponding to the preset section rule according to the heavy ion SEE section and the second fluence parameter; and acquiring a second SEE section according to the occurrence frequency of the second SEE.
Based on the above-mentioned acquisition of the first proton SEE cross section corresponding to the first SEE cross section, for the nuclear reaction of the proton beam current with various other materials (such as one or more of tungsten, copper, titanium and aluminum) contained in the microelectronic device, the contribution of these non-silicon materials to the proton SEE cross section is the second proton SEE cross section (i.e. the second SEE cross section):
wherein j is one of the non-silicon materials mentioned above, tjIs the equivalent thickness of the non-silicon material, njIs the number of nuclei in a unit volume of the non-silicon material. The second proton SEE cross section is obtained by steps similar to those of the first proton SEE cross section, such as equations (4) - (8), which are not repeated herein.
Therefore, the above equation (9) will be written as:
wherein the content of the first and second substances,
as shown in fig. 1, according to an embodiment of the present disclosure, acquiring a nuclear reaction-induced SEE cross section from a secondary particle LET spectrum and a heavy ion SEE cross section at step S103 includes: obtaining a first SEE cross section; obtaining a second SEE cross section; acquiring SEE cross sections caused by nuclear reaction according to the first SEE cross sections and the second SEE cross sections; wherein the first SEE cross-section is a SEE cross-section resulting from a nuclear reaction corresponding to a nuclear reaction of the first material, and the second SEE cross-section is a sum of SEE cross-sections resulting from nuclear reactions corresponding to nuclear reactions of a plurality of materials in the second material.
According to an embodiment of the present disclosure, acquiring a nuclear reaction-induced SEE cross-section from a first SEE cross-section and a second SEE cross-section includes: and summing the first SEE cross section and the second SEE cross section to obtain the SEE cross section caused by the nuclear reaction.
Thus, according to equations (1) - (10) above, the proton SEE cross-section resulting from nuclear reactions of incident protons with the host material silicon and all non-silicon materials of the microelectronic device should be the sum of the first proton SEE cross-section and the second proton SEE cross-section as described above:
thus, for low LET threshold devices where proton and silicon nuclei reactions dominate in the single event effect, σjSmaller and negligible. For LET thresholds greater than 15MeV cm2In the case of a/mg device, the LET values of the secondary particles produced by the reaction of protons with silicon nuclei are almost below this value, and do not contribute to the SEE cross section, σSiIs 0; only secondary particles produced by reaction of protons with nuclei of the high-Z material will have LET values greater than 15MeV cm2Mg, corresponding to σjBecomes the major portion of the proton SEE cross section.
According to an embodiment of the present disclosure, the first material is silicon; the second material includes at least one of tungsten, copper, titanium, and aluminum.
Silicon is the bulk material of semiconductor devices, and the sensitive regions of microelectronic devices and their vicinity are also substantially composed of silicon. It is assumed that the SEE cross section induced by the reaction of protons with silicon nuclei is equivalent to the following: in a microelectronic device, a silicon layer of thickness t is present, and each secondary particle (considering only ions) generated by a nuclear reaction of protons in the silicon layer can be regarded as a heavy ion incident perpendicularly from the surface of the device, and the LET value of the heavy ion is the LET value at the time of generation of the secondary particle, and all single event effects generated by the device are contributed by the secondary particle generated in the silicon layer of thickness t, where t is the equivalent thickness.
As shown in fig. 3A-3D, a comparison of heavy ion SEU cross-sectional experimental data and their corresponding Weibull fitted curves for 4 types of SRAM microelectronic devices, respectively. The characteristic sizes of the SRAM devices corresponding to FIGS. 3A-3D are 250nm, 130nm, 90nm and 65nm respectively, and the storage capacities are 16Mbit, 18Mbit and 18Mbit respectively. It can be seen that the LET threshold of this 4 type SRAM device is low, and its corresponding proton SEU cross section should be dominated by the proton reaction with the bulk material silicon core of the semiconductor device. According to the above equation (11), the proton SEU cross section satisfying each SRAM device should satisfy:
σ(E)＝σSi(E) (12)
according to the above equation (12), when the equivalent thicknesses t of the silicon layer of the above 4 types of SRAM devices are 2.1 μm, 0.4 μm, 1.55 μm, and 2.3 μm, respectively, the predicted proton SEU cross section can be well matched with the experimental data values as shown in fig. 4A to 4D.
As shown in fig. 5A-5B, which are graphs comparing the respective generated heavy ion SEL cross-sections of SRAM devices a and B, which are dominant in the single event latch-up effect for the proton and tungsten nuclear reactions, with the corresponding weibull fitted curves, respectively. As shown in FIG. 5A, when the heavy ion SEL cross section is 1% of the saturation cross section, the corresponding LET values L are 15MeV cm2/mg、18MeVcm2In terms of/mg. According to the above equation (11), the proton SEL cross section satisfying each SRAM device should satisfy:
σ(E)＝σW(E) (13)
according to the above equation (13), the tungsten layer equivalent thickness t in devices B and CwWhen the particle sizes are 0.09 μm and 0.32 μm, respectively, as shown in the figure5B, the predicted data and the experimental data are well matched and are within the error range of the experiment.
In summary, according to the method for acquiring the SEE cross section caused by the nuclear reaction in the embodiment of the disclosure, the SEE cross section caused by the nuclear reaction can be acquired through the heavy ion SEE cross section obtained through the test, so that while the accuracy of the SEE cross section caused by the nuclear reaction is ensured, a great amount of time and cost for performing the SEE test of the incident particles are saved. In addition, the acquisition method can also make up for the deficiency of the test conditions. For example, the proton accelerator capable of performing the proton SEE test at present in China can provide the maximum proton energy of 100MeV, the proton SEE section above 100MeV cannot be obtained through experiments, and the obtaining method can predict the proton SEE section. Further, the method disclosed by the embodiment of the disclosure is suitable for a low-LET threshold device in which the incident particle and silicon nucleus reaction play a leading role in a single event effect, and is also suitable for a high-LET threshold device in which the incident particle and high-Z material nuclei such as tungsten react in a single event effect.
Finally, it should be understood that neutrons are one type of incident particles, and that neutrons and protons have the same mechanism for initiating a single event effect, and that single event effects can also be initiated by secondary particles generated by nuclear reactions with semiconductor materials. Therefore, the technical idea of the method for obtaining the proton SEE cross section in the embodiment of the present disclosure is actually applicable to predicting the neutron SEE cross section, and is not described herein again. Therefore, the method disclosed by the embodiment of the disclosure has a very important significance for the error rate estimation of the devices in the aircraft and the adjacent space aircraft.
In addition, heavy ions can also cause single event effect through nuclear reaction besides the single event effect caused by direct ionization, but the former plays a dominant role, the latter can be generally ignored, and the method can be used for estimating SEE cross section caused by the latter. Electrons, photons, etc. may also induce a single event effect through nuclear reactions, and the method is also applicable. In summary, the method can be used to predict the SEE cross section of any particle as long as it can induce a single event effect by nuclear reaction with the semiconductor material.
As shown in fig. 6, another aspect of the present disclosure provides an apparatus 600 for acquiring an SEE cross section caused by a nuclear reaction, which is applied to detecting a single event effect caused by a nuclear reaction of a microelectronic device, and includes a first acquisition module 610, a second acquisition module 620, and a third acquisition module 630. The first obtaining module 610 is used for obtaining a secondary particle LET spectrum; the second acquiring module 620 is used for acquiring a heavy ion SEE section; the third acquisition module 630 is used to acquire the SEE cross-section resulting from the nuclear reaction from the secondary particle LET spectrum and the heavy ion SEE cross-section.
It should be noted that the apparatus for acquiring an SEE cross section caused by the nuclear reaction is used to implement the method for acquiring an SEE cross section caused by the nuclear reaction, and for details of embodiments related to the method for acquiring an SEE cross section caused by the nuclear reaction, reference may be made to the above disclosure, and details are not repeated here.
Any number of modules, sub-modules, units, sub-units, or at least part of the functionality of any number thereof according to embodiments of the present disclosure may be implemented in one module. Any one or more of the modules, sub-modules, units, and sub-units according to the embodiments of the present disclosure may be implemented by being split into a plurality of modules. Any one or more of the modules, sub-modules, units, sub-units according to embodiments of the present disclosure may be implemented at least in part as a hardware circuit, such as a Field Programmable Gate Array (FPGA), a Programmable Logic Array (PLA), a system on a chip, a system on a substrate, a system on a package, an Application Specific Integrated Circuit (ASIC), or may be implemented in any other reasonable manner of hardware or firmware by integrating or packaging a circuit, or in any one of or a suitable combination of software, hardware, and firmware implementations. Alternatively, one or more of the modules, sub-modules, units, sub-units according to embodiments of the disclosure may be at least partially implemented as a computer program module, which when executed may perform the corresponding functions.
As shown in fig. 7, another aspect of the present disclosure provides an electronic device including one or more processors and a storage device for storing one or more programs. Wherein the one or more programs, when executed by the one or more processors, cause the one or more processors to perform the method as above. The electronic device shown in fig. 7 is only an example, and should not bring any limitation to the functions and the scope of use of the embodiments of the present disclosure.
As shown in fig. 7, a computer system 700 according to an embodiment of the present disclosure includes a processor 701, which can perform various appropriate actions and processes according to a program stored in a Read Only Memory (ROM)702 or a program loaded from a storage section 708 into a Random Access Memory (RAM) 703. The processor 701 may include, for example, a general purpose microprocessor (e.g., a CPU), an instruction set processor and/or associated chipset, and/or a special purpose microprocessor (e.g., an Application Specific Integrated Circuit (ASIC)), among others. The processor 701 may also include on-board memory for caching purposes. The processor 701 may comprise a single processing unit or a plurality of processing units for performing the different actions of the method flows according to embodiments of the present disclosure.
In the RAM 703, various programs and data necessary for the operation of the system 700 are stored. The processor 701, the ROM 702, and the RAM 703 are connected to each other by a bus 704. The processor 701 performs various operations of the method flows according to the embodiments of the present disclosure by executing programs in the ROM 702 and/or the RAM 703. It is noted that the programs may also be stored in one or more memories other than the ROM 702 and RAM 703. The processor 701 may also perform various operations of method flows according to embodiments of the present disclosure by executing programs stored in the one or more memories.
According to an embodiment of the present disclosure, the system 700 may also include an input/output (I/O) interface 705, the input/output (I/O) interface 705 also being connected to the bus 704. The system 700 may also include one or more of the following components connected to the I/O interface 705: an input portion 706 including a keyboard, a mouse, and the like; an output section 707 including a display such as a Cathode Ray Tube (CRT), a Liquid Crystal Display (LCD), and the like, and a speaker; a storage section 708 including a hard disk and the like; and a communication section 709 including a network interface card such as a LAN card, a modem, or the like. The communication section 709 performs communication processing via a network such as the internet. A drive 710 is also connected to the I/O interface 708 as needed. A removable medium 711 such as a magnetic disk, an optical disk, a magneto-optical disk, a semiconductor memory, or the like is mounted on the drive 710 as necessary, so that a computer program read out therefrom is mounted into the storage section 708 as necessary.
According to embodiments of the present disclosure, method flows according to embodiments of the present disclosure may be implemented as computer software programs. For example, embodiments of the present disclosure include a computer program product comprising a computer program embodied on a computer readable storage medium, the computer program containing program code for performing the method illustrated by the flow chart. In such an embodiment, the computer program can be downloaded and installed from a network through the communication section 709, and/or installed from the removable medium 711. The computer program, when executed by the processor 701, performs the above-described functions defined in the system of the embodiment of the present disclosure. The systems, devices, apparatuses, modules, units, etc. described above may be implemented by computer program modules according to embodiments of the present disclosure.
The present disclosure also provides a computer-readable storage medium, which may be contained in the apparatus/device/system described in the above embodiments; or may exist separately and not be assembled into the device/apparatus/system. The computer-readable storage medium carries one or more programs which, when executed, implement the method according to an embodiment of the disclosure.
According to embodiments of the present disclosure, the computer-readable storage medium may be a non-volatile computer-readable storage medium, which may include, for example but is not limited to: a portable computer diskette, a hard disk, a Random Access Memory (RAM), a read-only memory (ROM), an erasable programmable read-only memory (EPROM or flash memory), a portable compact disc read-only memory (CD-ROM), an optical storage device, a magnetic storage device, or any suitable combination of the foregoing. In the present disclosure, a computer readable storage medium may be any tangible medium that can contain, or store a program for use by or in connection with an instruction execution system, apparatus, or device. For example, according to embodiments of the present disclosure, a computer-readable storage medium may include the ROM 702 and/or the RAM 703 and/or one or more memories other than the ROM 702 and the RAM 703 described above.
Another aspect of the disclosure provides a computer program comprising computer executable instructions for implementing a method as described above when executed.
The flowchart and block diagrams in the figures illustrate the architecture, functionality, and operation of possible implementations of systems, methods and computer program products according to various embodiments of the present disclosure. In this regard, each block in the flowchart or block diagrams may represent a module, segment, or portion of code, which comprises one or more executable instructions for implementing the specified logical function(s). It should also be noted that, in some alternative implementations, the functions noted in the block may occur out of the order noted in the figures. For example, two blocks shown in succession may, in fact, be executed substantially concurrently, or the blocks may sometimes be executed in the reverse order, depending upon the functionality involved. It will also be noted that each block of the block diagrams or flowchart illustration, and combinations of blocks in the block diagrams or flowchart illustration, can be implemented by special purpose hardware-based systems which perform the specified functions or acts, or combinations of special purpose hardware and computer instructions.
Those skilled in the art will appreciate that various combinations and/or combinations of features recited in the various embodiments and/or claims of the present disclosure can be made, even if such combinations or combinations are not expressly recited in the present disclosure. In particular, various combinations and/or combinations of the features recited in the various embodiments and/or claims of the present disclosure may be made without departing from the spirit or teaching of the present disclosure. All such combinations and/or associations are within the scope of the present disclosure.
The above-mentioned embodiments are intended to illustrate the objects, technical solutions and advantages of the present invention in further detail, and it should be understood that the above-mentioned embodiments are only exemplary embodiments of the present invention, and are not intended to limit the present invention, and any modifications, equivalents, improvements and the like made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (13)
1. A method for acquiring SEE section caused by nuclear reaction is applied to the detection of single event effect caused by nuclear reaction of a microelectronic device, and is characterized by comprising the following steps:
acquiring a secondary particle LET spectrum;
obtaining a heavy ion SEE section; and
and acquiring the SEE section caused by the nuclear reaction according to the LET spectrum of the secondary particles and the SEE section of the heavy ions.
2. The method of claim 1, wherein said obtaining said nuclear reaction-induced SEE cross-section from said secondary particle LET spectrum and said heavy ion SEE cross-section comprises:
obtaining a first SEE cross section;
obtaining a second SEE cross section;
acquiring SEE cross sections caused by the nuclear reaction according to the first SEE cross sections and the second SEE cross sections;
wherein the first SEE cross-section is a SEE cross-section resulting from a nuclear reaction corresponding to a nuclear reaction of the first material, and the second SEE cross-section is a sum of SEE cross-sections resulting from a nuclear reaction corresponding to a nuclear reaction of a plurality of materials in the second material.
3. The method of claim 2, wherein said obtaining a first SEE cross-section comprises:
acquiring a first fluence parameter corresponding to a nuclear reaction of the first material according to the LET spectrum of the secondary particles;
determining the occurrence frequency of a first SEE corresponding to a preset section rule according to the heavy ion SEE section and the first fluence parameter;
and acquiring the first SEE section according to the occurrence frequency of the first SEE.
4. The method of claim 2, wherein said obtaining a second SEE cross-section comprises:
acquiring a second fluence parameter corresponding to the nuclear reaction of the second material according to the secondary particle LET spectrum;
determining the second SEE occurrence frequency corresponding to a preset section rule according to the heavy ion SEE section and the second fluence parameter;
and acquiring the second SEE section according to the occurrence frequency of the second SEE.
5. The method of claim 2, wherein said obtaining the SEE cross-section resulting from the nuclear reaction from the first SEE cross-section and the second SEE cross-section comprises:
summing the first SEE cross-section and the second SEE cross-section to obtain a SEE cross-section resulting from the nuclear reaction.
6. The method of claim 2,
the first material is silicon;
the second material includes at least one of tungsten, copper, titanium, and aluminum.
7. The method of claim 1, wherein said obtaining a secondary particle LET spectrum comprises:
determining a secondary particle LET spectrum corresponding to the first material by a particle transport simulation rule.
8. The method of claim 7, wherein said determining a secondary particle LET spectrum corresponding to said first material by a particle transport simulation rule comprises:
obtaining the number of simulated secondary particles and a simulated LET value of the nuclear reaction of the first material through a particle transport simulation rule;
determining the number of simulated secondary particles corresponding to a preset LET value interval according to the number of the simulated secondary particles and the simulated LET value; and
and determining the LET spectrum of the secondary particles according to the characteristic parameters of the first material and the number of the simulated secondary particles.
9. The method of claim 1, wherein said obtaining heavy ion SEE cross-sections comprises:
and acquiring the heavy ion SEE section based on the heavy ion SEE experiment.
10. The method of claim 9, wherein obtaining the heavy ion SEE cross-section based on a heavy ion SEE experiment comprises:
detecting the number of single event effects generated by nuclear reaction between the heavy ion beam current and the first material;
and determining the SEE section of the heavy ions according to the particle fluence and the single-particle effect number of the heavy ion beam current.
11. An apparatus for acquiring SEE cross section caused by nuclear reaction, which is applied to the detection of single event effect caused by nuclear reaction of microelectronic device, is characterized by comprising:
the first acquisition module is used for acquiring a secondary particle LET spectrum;
the second acquisition module is used for acquiring a heavy ion SEE section;
and the third acquisition module is used for acquiring the SEE section caused by the nuclear reaction according to the LET spectrum of the secondary particles and the SEE section of the heavy ions.
12. An electronic device, comprising:
one or more processors;
a storage device for storing one or more programs,
wherein the one or more programs, when executed by the one or more processors, cause the one or more processors to perform the method of any of claims 1-10.
13. A computer readable medium having stored thereon executable instructions which, when executed by a processor, cause the processor to perform the method of any one of claims 1 to 10.
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101900770A (en) * | 2009-05-25 | 2010-12-01 | 北京圣涛平试验工程技术研究院有限责任公司 | Method and system for assessing radiation resisting capability of device for satellite |
| CN108008289A (en) * | 2017-11-22 | 2018-05-08 | 西北核技术研究所 | A kind of acquisition methods in device proton single particle effect section |
| RU2657327C1 (en) * | 2016-12-26 | 2018-06-13 | Российская Федерация, от имени которой выступает Государственная корпорация по атомной энергии "Росатом" (Госкорпорация "Росатом") | Method for evaluating of the digital electronics elements stability to the effects of failures from the single particles influence |
| CN109298308A (en) * | 2018-10-24 | 2019-02-01 | 西安空间无线电技术研究所 | Heavy ion indirect ionization leads to semiconductor devices SEU cross section appraisal procedure |
| CN111737935A (en) * | 2020-06-30 | 2020-10-02 | 中国电子产品可靠性与环境试验研究所（（工业和信息化部电子第五研究所）（中国赛宝实验室）） | Power device failure rate evaluation method, computer equipment and storage medium |
-
2021
- 2021-01-05 CN CN202110010348.9A patent/CN112668232B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101900770A (en) * | 2009-05-25 | 2010-12-01 | 北京圣涛平试验工程技术研究院有限责任公司 | Method and system for assessing radiation resisting capability of device for satellite |
| RU2657327C1 (en) * | 2016-12-26 | 2018-06-13 | Российская Федерация, от имени которой выступает Государственная корпорация по атомной энергии "Росатом" (Госкорпорация "Росатом") | Method for evaluating of the digital electronics elements stability to the effects of failures from the single particles influence |
| CN108008289A (en) * | 2017-11-22 | 2018-05-08 | 西北核技术研究所 | A kind of acquisition methods in device proton single particle effect section |
| CN109298308A (en) * | 2018-10-24 | 2019-02-01 | 西安空间无线电技术研究所 | Heavy ion indirect ionization leads to semiconductor devices SEU cross section appraisal procedure |
| CN111737935A (en) * | 2020-06-30 | 2020-10-02 | 中国电子产品可靠性与环境试验研究所（（工业和信息化部电子第五研究所）（中国赛宝实验室）） | Power device failure rate evaluation method, computer equipment and storage medium |
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