CN112653421A - High-sound-speed high-frequency high-performance narrow-band filter - Google Patents
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H11/00—Networks using active elements
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- H03H11/04—Frequency selective two-port networks
Abstract
The invention relates to a high-sound-speed high-frequency high-performance narrow-band filter, which comprises: the acoustic transducer comprises a substrate layer made of high-sound-velocity materials, a layer made of low-sound-velocity materials, a piezoelectric layer made of high-sound-velocity materials and electrodes arranged on the piezoelectric layer. The substrate layer and the low acoustic velocity material layer together form a bragg reflector layer. The piezoelectric layer is made of c-axis single crystal AlN, power tolerance of the device is greatly improved, the low sound velocity layer is made of special tangential LGS, and the high sound velocity high frequency high Q value narrow-band filter can be obtained by utilizing weak piezoelectric characteristics of the LGS. Meanwhile, the thermal expansion coefficients of the single crystal AlN and the LGS are matched, so that the film bonding strength between the single crystal AlN and the LGS is improved, and the single crystal AlN and the LGS are not easy to strip at high temperature. The invention realizes the filter with high working frequency, high power, high Q value and low insertion loss.
Description
Technical Field
The invention relates to the field of mobile communication, in particular to a high-sound-speed high-frequency high-performance narrow-band filter in a radio frequency front end of a mobile phone.
Background
The radio frequency front end of the mobile phone is a functional area between a radio frequency transceiver and an antenna of the smart phone, and the radio frequency front end of the mobile phone comprises a power amplifier, an antenna switch, a filter, a duplexer, a low noise amplifier and other devices.
Among the three major mainstream technologies of current filters are Surface Acoustic Wave (SAW), Bulk Acoustic Wave (BAW), and thin film bulk acoustic wave (FBAR) filters.
Wherein, the low frequency and the middle frequency band mainly use the SAW filter; its technology has evolved from Normal-SAW, TC-SAW, and further to IHP-SAW, as well as future XBAR technologies.
The IHP-SAW technology employs a hybrid technology similar to the multilayer reflective gate structure of SAW device + SMR-BAW device. The mixed structure technology not only endows the SAW device with the characteristic of simple single-side processing technology, but also endows the SMR-BAW device with the characteristic of low energy leakage.
IHP-SAW has become a great development trend in the SAW filter industry at present due to its excellent temperature compensation performance and lower insertion loss, which can compare with or even exceed part of BAW and FBAR filters.
IHP-SAW has three major advantages:
1. the IHP-SAW device with high Q value adopts a multilayer reflection gate structure of SMR-BAW to focus more surface acoustic wave energy on the surface of a substrate, thereby reducing the loss of acoustic waves in the transmission process and improving the Q value of the device. The high Q characteristic (Qmax-3000, whereas the conventional SAW Qmax-1000) makes it highly out-of-band rejection, steep passband edge roll-off, and high isolation.
2. The low frequency temperature Coefficient TCF (temperature Coefficient of frequency), the TCF of IHP-SAW is less than or equal to-20 ppm/DEG C, and the further optimization design can reach 0 ppm/DEG C.
3. The high heat dissipation performance of the device can ensure the stable operation of the device under high power.
The SMR-BAW multilayer reflective gate structure of the IHP-SAW is realized by alternately stacking high acoustic impedance and low acoustic impedance. The low acoustic impedance material mostly adopts TCF material with positive temperature coefficient, such as silicon dioxide; the high acoustic impedance layer is usually made of a material with a low temperature coefficient, such as SiN, W, etc.
However, the existing IHP-SAW technology has the following problems:
firstly, the IHP-SAW working frequency is about 3.5GHz, and the high-frequency requirement of 5G communication can not be met (generally more than 5G is needed);
secondly, the IHP-SAW power is 35dBm, and the high-power requirement of 5G communication cannot be met;
and the Q value of the IHP-SAW is reduced along with the increase of the working frequency, and when the working frequency is 3.5GHz, the Q value is about 2200, so that the requirement of high Q value and low insertion loss of 5G communication is not met.
Therefore, there is a need for a filter with high operating frequency, high power, high Q, and low insertion loss.
Disclosure of Invention
This summary is provided to introduce a selection of concepts in a simplified form that are further described below in the detailed description. This summary is not intended to identify key features or essential features of the claimed subject matter; nor is it intended to be used as an aid in determining or limiting the scope of the claimed subject matter.
The high-frequency high-performance surface acoustic wave device adopts the silicon carbide single crystal substrate as the substrate layer, has high sound velocity, and has the advantages of high crystal quality, good consistency and the like compared with a diamond self-supporting substrate, diamond and a diamond-like carbon film.
The high-frequency high-performance surface acoustic wave device adopts single crystal AlN as a piezoelectric material. The sound velocity of the single crystal AlN reaches 11000m/s, the single crystal AlN thin film has good piezoelectric and dielectric properties, and the c-axis oriented AlN thin film has excellent material properties such as low dielectric and acoustic loss, high sound velocity, thermal stability and the like. The low acoustic impedance layer is made of LGS (lanthanum gallium silicate) material, and the electromechanical coupling coefficient of LGS crystal is 17% and is about quartz (SiO)2) 2-3 times of the quartz crystal, but has the same temperature stability as quartz. The relative bandwidth of the narrow bandwidth filter is less than or equal to 5 percent (the relative bandwidth is 2 k)t 2) The electromechanical coupling coefficient is less than or equal to 2.5 percent, and the filter realizes high frequency and low electromechanical coupling coefficient.
The invention relates to a narrow-band filter comprising: the acoustic transducer comprises a substrate layer made of high-sound-velocity materials, a layer made of low-sound-velocity materials, a piezoelectric layer made of high-sound-velocity materials and electrodes arranged on the piezoelectric layer.
Wherein the high acoustic velocity material of the piezoelectric layer is single crystal AlN with c-axis orientation;
wherein the low sound velocity material layer is an LGS layer, and the Euler angle is 0 degree, 138.5 degrees and 26.6 degrees;
wherein the high sound velocity material of the substrate layer is Si, SiN or Al2O33C-SiC, W, 4H-SiC or 6H-SiC；
Wherein the electrode is an IDT electrode, is totally embedded in the piezoelectric layer or is positioned on the piezoelectric layer, and is composed of Ti, Al, Cu, Au, Pt, Ag, Pd, Ni or a laminated body thereof;
the thickness of the substrate layer is 5 lambda, the thickness of the low-sound-velocity material layer is 0.1 lambda, the thickness of the piezoelectric layer is 0.5 lambda, the width of the electrode and the distance between the electrodes are all 0.25 lambda, wherein lambda is the sound wave wavelength excited by the electrodes.
The substrate layer and the low-sound-velocity material layer jointly form a Bragg reflection layer, and the Bragg reflection layer is formed by plating an LGS layer on the substrate layer in a PECVD (plasma enhanced chemical vapor deposition), CVD (chemical vapor deposition), MOCVD (metal organic chemical vapor deposition) or MBE (molecular beam epitaxy) mode.
The narrow band filter of the present invention may further include more bragg reflective layers formed by the substrate layer and the low acoustic velocity material layer together. The number of the Bragg reflecting layers can be 2-9, and the Bragg reflecting layers are formed by alternately superposing the substrate layers and the low-sound-velocity material layers.
These and other features and advantages will become apparent upon reading the following detailed description and upon reference to the accompanying drawings. It is to be understood that both the foregoing general description and the following detailed description are explanatory only and are not restrictive of aspects as claimed.
Drawings
The present invention will now be described more fully hereinafter with reference to the accompanying drawings, in which specific embodiments of the invention are shown. The drawings are only for purposes of illustrating the preferred embodiments and are not to be construed as limiting the application. Also, like reference numerals are used to refer to like parts throughout the drawings. The drawings are only schematic and are not to be construed as limiting the actual dimensional proportions.
Fig. 1 is a schematic diagram of a structural model of an IHP resonator with electrodes embedded in a piezoelectric layer according to an embodiment of the present invention;
fig. 2 is a schematic structural view of the electrode-embedded piezoelectric layer IHP resonator of fig. 1;
fig. 3 is a schematic structural diagram of an IHP resonator in which electrodes are not embedded according to another embodiment of the present invention;
FIG. 4 is a schematic structural diagram of a 2-layer IHP resonator with a Bragg reflection layer according to the present invention;
FIG. 5 is a schematic structural diagram of an n-layer IHP resonator with a Bragg reflection layer according to the present invention;
FIG. 6 is an admittance diagram of a 1-layer Bragg reflector IHP resonator in accordance with the present invention;
FIG. 7 is an admittance diagram of a Bragg reflector 2-layer IHP resonator in accordance with the present invention;
fig. 8 is an admittance diagram of a 3-layer bragg reflector resonator according to the present invention.
Detailed Description
The present invention will now be described more fully hereinafter with reference to the accompanying drawings, in which specific embodiments of the invention are shown. Various advantages and benefits of the present invention will become apparent to those of ordinary skill in the art upon reading the following detailed description of the specific embodiments. It should be understood, however, that the present invention may be embodied in various forms and should not be limited to the embodiments set forth herein. The following embodiments are provided so that the invention may be more fully understood. Unless otherwise defined, technical or scientific terms used herein shall have the ordinary meaning as understood by those of skill in the art to which this application belongs.
The invention relates to a high-sound-speed high-frequency high-performance narrow-band filter, which comprises: the acoustic transducer comprises a substrate layer made of high-sound-velocity materials, a layer made of low-sound-velocity materials, a piezoelectric layer made of high-sound-velocity materials and electrodes arranged on the piezoelectric layer.
The substrate layer and the low acoustic velocity material layer together form a bragg reflector layer. The piezoelectric layer is made of c-axis single crystal AlN, power tolerance of the device is greatly improved, the low sound velocity layer is made of special tangential LGS, and the high sound velocity high frequency high Q value narrow-band filter can be obtained by utilizing weak piezoelectric characteristics of the LGS. Meanwhile, the thermal expansion coefficients of the single crystal AlN and the LGS are matched, so that the film bonding strength between the single crystal AlN and the LGS is improved, and the single crystal AlN and the LGS are not easy to strip at high temperature.
The invention realizes the filter with high working frequency, high power, high Q value and low insertion loss.
Fig. 1 and 2 are a structural model diagram of an IHP resonator and a schematic diagram of an IHP resonator with electrodes embedded in a piezoelectric layer according to an embodiment of the present invention.
As can be seen from the figure, the resonator comprises a substrate layer 101, a low acoustic velocity layer 102, a piezoelectric layer 103 and an electrode 104.
The substrate layer 101 of the IHP resonator is made of a high acoustic velocity material with high acoustic impedance, which may be Si, SiN, Al2O33C-SiC, W, 4H-SiC or 6H-SiC, with a thickness of 5 λ (λ is the wavelength of the acoustic wave excited by the electrode fingers, λ being 1 μm).
The piezoelectric layer 103 is made of single crystal AlN with c-axis orientation and is made of a high-sound-velocity material, so that the central frequency f of the device can be greatly improved01/2(fp + fs), meets the requirement of 5G communication, and has a piezoelectric layer thickness of 0.5 λ.
Interdigital transducer (IDT) electrodes 104 are arranged on the piezoelectric layer, in the embodiment of FIGS. 1 and 2, the electrodes are all embedded in the piezoelectric layer, the width of the electrodes is the same as the distance between the electrodes, and the width of the electrodes and the distance between the electrodes are both 0.25 lambda; the IDT electrode is composed of a metal or alloy such as Ti, Al, Cu, Au, Pt, Ag, Pd, Ni, or a laminate of these metals or alloys, and has an electromechanical coupling coefficient k2＝(π2/8)(fp2-fs2)/fs2Wherein fs is the resonance frequency and fp is the antiresonance frequency.
A layer of LGS low acoustic velocity layer 102 is interposed between the piezoelectric layer 103 and the high acoustic velocity substrate layer 101, and the euler angle is (0 °,138.5 °,26.6 °). The LGS is a low acoustic impedance material with piezoelectric properties and a negative temperature coefficient of piezoelectric layer frequency. The LGS has different frequency temperature coefficients TCF according to different tangential directions, obtains a positive frequency temperature coefficient by controlling the tangential direction, and can reduce the TCF value of a device by overlapping the positive frequency temperature coefficient with the single crystal AlN frequency temperature coefficient.
The thickness of the LGS layer is 0.1 lambda, and the LGS layer can be plated on the substrate layer of the high-sound-velocity material in a PECVD (plasma enhanced chemical vapor deposition), CVD (chemical vapor deposition), MOCVD (metal organic chemical vapor deposition), MBE (moving beam) mode and other modes.
Coefficient of thermal expansion CTE of LGS 5.15 × 10-6K-1Coefficient of thermal expansion CTE of single crystal AlN 5.2X 10-6K-1The two coefficients of thermal expansion are matched.
The LGS layer has low sound velocity, and forms a Bragg reflection layer together with the substrate layer made of high sound velocity material, so that sound waves are prevented from leaking from the direction of the substrate layer, and the Q value of the device can be greatly improved.
Although fig. 1 and 2 show only an example of one bragg reflective layer, the bragg reflective layer may be multi-layered, that is, a stack of sets of the high sound velocity substrate layer 101 and the LGS low sound velocity layer 102, according to the present invention. This is further illustrated in fig. 4, 5 below.
Fig. 3 is a schematic diagram of an IHP resonator with electrodes not embedded in the piezoelectric layer according to another embodiment of the present invention. From a comparison of fig. 2 and 3, it can be seen that the electrodes of fig. 3 are not embedded in the piezoelectric layer, but the same effect can be achieved. The present invention preferably has electrodes embedded in the piezoelectric layer.
Fig. 4 is a schematic structural view of an IHP resonator having a 2-layer bragg reflector according to the present invention. The Bragg reflection layer number n is 2, and the substrate layer comprising two layers of high-sound-velocity materials and the two layers of low-sound-velocity materials (LGS layers) are alternately superposed, so that the electromechanical coupling coefficient k of the device can be reduced2The Q value is increased. From the experimental data of the inventor, the maximum power value of the present invention is 38.4dBm, and the power tolerance is greatly improved compared with the conventional IHP with the maximum power value of 35 dBm.
Fig. 5 is a schematic structural diagram of an IHP resonator with multiple (n-layer) bragg reflective layers, where n may be preferably 2-9 layers, and the substrate layer of high sound velocity material and the low sound velocity layer (LGS layer) are alternately stacked, and those skilled in the art can select the corresponding number of layers according to design requirements.
Fig. 6 to 8 are admittance diagrams of the IHP resonator having 1, 2, and 3 bragg reflective layer layers, respectively. As can be seen from the figure:
when n is 1: speed of sound V7594 m/s, fs 7.587GHz, fp 7.601GHz, f07.594GHz and relative bandwidth 2Xk2，k20.46%, relative bandwidth of 0.92%, relative bandwidth of narrow band less than 5%, relative bandwidth of wide band between 5% and 25%, relative bandwidth of ultra wide band greater than 25%. And Q is 2688, has a high Q value and low device insertion loss.
When n is 2: speed of sound V6608 m/s, fs 6.6GHz, fp 6.616GHz, f06.608GHz, relative bandwidth 2Xk2，k20.6%, relative bandwidth 1.2%. Q is 3321.5, the high-Q-factor and low-insertion loss device. This corresponds to the situation of fig. 4.
When n is 3: speed of sound V7548 m/s, fs 7.544GHz, fp 7.552GHz, f07.548GHz and relative bandwidth 2Xk2，k20.26%, relative bandwidth 0.54%. Q10633, with an extremely high Q value, the device insertion loss is very low.
The piezoelectric layer of the invention adopts c-axis single crystal AlN, the low sound velocity layer adopts special tangential LGS, and the high sound velocity high frequency high Q value narrow-band filter can be obtained by utilizing the weak piezoelectric property of the LGS.
The thermal expansion coefficients of the single crystal AlN and the LGS are matched, so that the film joint strength between the single crystal AlN and the LGS is improved, and the single crystal AlN and the LGS are not easy to strip at high temperature.
The c-axis oriented single crystal AlN is used as the piezoelectric layer, so that the power tolerance of the device can be greatly improved.
The above embodiments are only used for illustrating the technical solutions of the present application, and not for limiting the same; although the present application has been described in detail with reference to the foregoing embodiments, it should be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some or all of the technical features may be equivalently replaced; such modifications and substitutions do not depart from the spirit and scope of the present disclosure, and the present disclosure should be construed as being covered by the claims and the specification.
Claims (10)
1. A narrow band filter comprising:
a substrate layer of a high acoustic velocity material;
a piezoelectric layer of a single crystal AlN high-sound-velocity material;
an electrode arranged on the piezoelectric layer of the monocrystal AlN high-sound-velocity material; and
an LGS low acoustic velocity material layer between the high acoustic velocity material substrate layer and the single crystal AlN high acoustic velocity material piezoelectric layer.
2. The narrow band filter of claim 1, wherein the high acoustic velocity material of the piezoelectric layer of single crystal AlN high acoustic velocity material is single crystal AlN with c-axis orientation and a thickness of 0.5 λ, where λ is the wavelength of the acoustic wave excited by the electrodes.
3. The narrow band filter of claim 1, wherein the LGS low acoustic velocity material layer has an euler angle of (0 °,138.5 °,26.6 °), and the LGS low acoustic velocity material layer has a thickness of 0.1 λ, where λ is the wavelength of the acoustic wave excited by the electrode.
4. The narrow band filter according to claim 1, wherein the high acoustic velocity material of the high acoustic velocity material backing layer is Si, SiN, Al2O33C-SiC, W, 4H-SiC or 6H-SiC, and the thickness of the substrate layer of the high-sound-velocity material is 5 lambda, wherein lambda is the wavelength of sound waves excited by the electrode.
5. The narrow band filter of claim 1, wherein said electrodes are IDT electrodes all embedded in said piezoelectric layer of single crystal AlN high acoustic velocity material, the width of said electrodes and the spacing between said electrodes being the same and each being 0.25 λ, where λ is the wavelength of the acoustic wave excited by said electrodes.
6. The narrow band filter according to claim 5, wherein the IDT electrode is made of Ti, Al, Cu, Au, Pt, Ag, Pd, Ni or a laminate thereof.
7. The narrow band filter of claim 1, wherein the high acoustic velocity material substrate layer and the LGS low acoustic velocity material layer together form a bragg reflector layer by coating the high acoustic velocity material substrate layer with a layer of LGS using PECVD, CVD, MOCVD, MBE.
8. The narrow band filter of claim 7, further comprising more layers of Bragg reflectors comprised of the high acoustic velocity material substrate layer and the LGS low acoustic velocity material layer.
9. The narrow band filter of claim 7, wherein the number of Bragg reflection layers of the narrow band filter is 1, 2, 3, 4, 5, 6, 7, 8 or 9 layers, formed by alternately stacking the substrate layer of high acoustic velocity material and the layer of LGS low acoustic velocity material.
10. The narrow band filter of claim 1, wherein said electrodes are IDT electrodes on said piezoelectric layer of single crystal AlN high acoustic velocity material, the width of said electrodes and the spacing between said electrodes being the same and each being 0.25 λ, where λ is the wavelength of the acoustic wave excited by said electrodes.
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| CN113114158A (en) * | 2021-05-11 | 2021-07-13 | 中国科学院上海微系统与信息技术研究所 | Lamb wave resonator and elastic wave device |
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