CN112652604A - Antenna packaging structure and packaging method - Google Patents
Antenna packaging structure and packaging method Download PDFInfo
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- CN112652604A CN112652604A CN201910959254.9A CN201910959254A CN112652604A CN 112652604 A CN112652604 A CN 112652604A CN 201910959254 A CN201910959254 A CN 201910959254A CN 112652604 A CN112652604 A CN 112652604A
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Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
- H01L23/49816—Spherical bumps on the substrate for external connection, e.g. ball grid arrays [BGA]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/561—Batch processing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
- H01L23/3128—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation the substrate having spherical bumps for external connection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49827—Via connections through the substrates, e.g. pins going through the substrate, coaxial cables
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49838—Geometry or layout
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/12—Supports; Mounting means
- H01Q1/22—Supports; Mounting means by structural association with other equipment or articles
- H01Q1/2283—Supports; Mounting means by structural association with other equipment or articles mounted in or on the surface of a semiconductor substrate as a chip-type antenna or integrated with other components into an IC package
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Geometry (AREA)
- Manufacturing & Machinery (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
The invention provides an antenna packaging structure and a packaging method. The metal column is fixed and electrically connected to the second surface of the rewiring layer through metal solder, the metal solder completely covers the bottom of the metal column, the metal column is perpendicular to the rewiring layer, and the antenna circuit chip is electrically connected with the antenna metal layer through the rewiring layer and the metal column. The antenna packaging structure connects the metal column to the surface of the rewiring layer through the metal solder and the laser heating process, and the metal column with large diameter can be selected, so that the structural strength of the metal column is improved, the feeder loss can be reduced, and the efficiency and the performance of the antenna are improved. Meanwhile, the metal solder can completely coat the bottom of the metal column, so that the metal column is vertically arranged, the offset of the top center and the tail end center of the metal column is avoided, and the process deviation is reduced.
Description
Technical Field
The invention belongs to the field of semiconductor packaging, and particularly relates to a packaging structure and a packaging method of an antenna.
Background
Due to the advancement of technology, various high-tech electronic products have been developed to facilitate people's lives, including various electronic devices, such as: notebook computers, cell phones, tablet computers (PAD), etc.
With the popularization of these high-tech electronic products and the increase of the demand of people, in addition to the great increase of various functions and applications configured in these high-tech products, the functions of wireless communication are increased particularly to match the mobile demand of people. Therefore, people can use the high-tech electronic products at any place or any time through the high-tech electronic devices with the wireless communication function. Therefore, the flexibility and the convenience of the use of the high-tech electronic products are greatly improved, so that people do not need to be limited in a fixed area any more, the boundary of the use range is broken, and the application of the electronic products is really convenient for the life of people.
Generally, the conventional antenna structure generally includes a dipole antenna, a monopole antenna, a plate antenna, an inverted F antenna, a meander antenna, an inverted L antenna, a loop antenna, a spiral antenna, a spring antenna, and the like. It is known to fabricate the antenna directly on the surface of the circuit board, which results in the antenna occupying additional circuit board area and having poor integration. How to reduce the area of the circuit board occupied by the antenna and improve the integration performance of the antenna packaging structure and the antenna efficiency is a problem to be overcome by these electronic devices.
Disclosure of Invention
In view of the above-mentioned drawbacks of the prior art, an object of the present invention is to provide an antenna package structure and an antenna package method, which are used to solve the problem of low efficiency and performance of the prior art antenna.
To achieve the above and other related objects, the present invention provides an antenna package structure, including: a rewiring layer including a first side and an opposing second side; the metal column is fixed and electrically connected to the second surface of the rewiring layer through metal solder, the metal solder completely covers the bottom of the metal column, and the metal column is perpendicular to the rewiring layer; the packaging layer wraps the metal column, and the top surface of the packaging layer is exposed out of the metal column; the antenna metal layer is formed on the packaging layer and connected with the metal column; the antenna circuit chip is combined on the first surface of the rewiring layer and is electrically connected with the antenna metal layer through the rewiring layer and the metal column; and the metal bump is formed on the first surface of the rewiring layer so as to realize the electrical leading-out of the rewiring layer.
Optionally, the shape of the solidified metal solder is a trapezoid, and an angle of a lower base angle of the trapezoid is between 45 degrees and 90 degrees.
Optionally, the metal solder comprises tin or gold-tin alloy, and the material of the metal pillar comprises one of gold, silver, copper and aluminum.
Optionally, the radial width of the metal pillar is between 100 microns and 5000 microns.
Optionally, the radial width of the metal pillar is between 1000 microns and 2000 microns.
Optionally, the material of the encapsulation layer includes one of polyimide, silicone, and epoxy.
Optionally, the antenna circuit chip includes one or both of an active component and a passive component, where the active component includes one of a power management circuit, a transmitting circuit, and a receiving circuit, and the passive component includes one of a resistor, a capacitor, and an inductor.
The invention also provides an antenna packaging method, which comprises the following steps: 1) providing a supporting substrate, and forming a separation layer on the supporting substrate; 2) forming a rewiring layer on the separation layer, wherein the rewiring layer comprises a first surface connected with the separation layer and an opposite second surface; 3) providing a metal column and a metal solder, melting the metal solder by adopting a laser heating process, implanting the metal column on the second surface of the rewiring layer through the metal solder, and solidifying the metal solder, wherein the metal column is electrically connected with the rewiring layer; 4) packaging the metal column by using a packaging layer, and thinning the packaging layer to enable the top surface of the metal column to be exposed out of the packaging layer; 5) forming an antenna metal layer on the packaging layer, wherein the antenna metal layer is connected with the metal column; 6) peeling the rewiring layer and the support substrate based on the separation layer to expose a first surface of the rewiring layer; 7) providing an antenna circuit chip, and bonding the antenna circuit chip to the first surface of the rewiring layer, so that the antenna circuit chip is electrically connected with the antenna metal layer through the rewiring layer and the metal column; and 8) forming a metal bump on the first surface of the rewiring layer to realize the electrical leading-out of the rewiring layer.
Optionally, the metal solder completely covers the bottom of the metal pillar, and the metal pillar is perpendicular to the redistribution layer.
Optionally, the shape of the solidified metal solder is a trapezoid, and an angle of a lower base angle of the trapezoid is between 45 degrees and 90 degrees.
Optionally, the metal solder comprises tin or gold-tin alloy, and the material of the metal pillar comprises one of gold, silver, copper and aluminum.
Optionally, the support base comprises one of a glass substrate, a metal substrate, a semiconductor substrate, a polymer substrate, and a ceramic substrate.
Optionally, the separation layer includes a light-to-heat conversion layer, and step 6) irradiates the light-to-heat conversion layer with laser light to separate the light-to-heat conversion layer from the encapsulation layer and the supporting substrate, thereby peeling the rewiring layer and the supporting substrate.
Optionally, the method for encapsulating the metal pillar with the encapsulation layer in step 4) includes one of compression molding, transfer molding, liquid encapsulation, vacuum lamination, and spin coating, and the material of the encapsulation layer includes one of polyimide, silicone, and epoxy resin.
Optionally, the antenna circuit chip includes one or both of an active component and a passive component, where the active component includes one of a power management circuit, a transmitting circuit, and a receiving circuit, and the passive component includes one of a resistor, a capacitor, and an inductor.
Optionally, the radial width of the metal pillar is between 100 microns and 5000 microns.
Optionally, the radial width of the metal pillar is between 1000 microns and 2000 microns.
As described above, the antenna package structure and the antenna package method of the present invention have the following advantages:
the antenna packaging structure connects the metal column to the surface of the rewiring layer through the metal solder and the laser heating process, and the metal column with large diameter can be selected, so that the structural strength of the metal column is improved, the feeder loss can be reduced, and the efficiency and the performance of the antenna are improved.
According to the invention, the metal column is prepared by the process, so that the metal solder can completely coat the bottom of the metal column, the stability of the metal column is greatly improved, meanwhile, the metal column can be vertically arranged, the deviation between the top center and the tail end center of the metal column is avoided, and the process deviation is reduced.
According to the invention, the metal column is prepared by the process, so that damage to the rewiring layer and the whole packaging structure caused by the traditional high-temperature reflow process can be avoided, and the process yield is greatly improved.
The invention adopts the fan-out type packaging method to package the antenna structure, can effectively reduce the packaging volume, enables the antenna packaging structure to have higher integration level and better packaging performance, and has wide application prospect in the field of semiconductor packaging.
Drawings
Fig. 1 to 13 are schematic structural diagrams of steps of the antenna packaging method of the present invention, wherein fig. 13 is a schematic structural diagram of the antenna packaging structure of the present invention.
Description of the element reference numerals
101 supporting substrate
102 separating layers
201 first dielectric layer
202 first metal routing layer
203 second dielectric layer
204 second metal routing layer
301 metal solder
302 metal column
303 encapsulation layer
304 antenna metal layer
401 antenna circuit chip
501 metal bump
Detailed Description
The embodiments of the present invention are described below with reference to specific embodiments, and other advantages and effects of the present invention will be easily understood by those skilled in the art from the disclosure of the present specification. The invention is capable of other and different embodiments and of being practiced or of being carried out in various ways, and its several details are capable of modification in various respects, all without departing from the spirit and scope of the present invention.
Please refer to fig. 1 to 13. It should be noted that the drawings provided in the present embodiment are only for illustrating the basic idea of the present invention, and the drawings only show the components related to the present invention rather than being drawn according to the number, shape and size of the components in actual implementation, and the type, quantity and proportion of each component in actual implementation may be changed arbitrarily, and the layout of the components may be more complicated.
As shown in fig. 1 to 13, the present embodiment provides a method for packaging an antenna, where the method includes:
as shown in fig. 1, step 1) is performed to provide a supporting substrate 101, and a separation layer 102 is formed on the supporting substrate 101.
The support base 101 includes one of a glass substrate, a metal substrate, a semiconductor substrate, a polymer substrate, and a ceramic substrate, as an example. In this embodiment, the supporting substrate 101 is a glass substrate, which has a low cost, is easy to form the separation layer 102 on the surface thereof, and can reduce the difficulty of the subsequent stripping process.
As an example, the separation layer 102 includes a light-to-heat conversion Layer (LTHC), and is formed on the supporting substrate 101 by a spin coating process and then cured by a curing process. The light-heat conversion Layer (LTHC) has stable performance and smooth surface, is beneficial to the subsequent manufacture of a rewiring layer, and has lower stripping difficulty in the subsequent stripping process.
As shown in fig. 2 to 5, step 2) is then performed to form a redistribution layer on the separation layer 102, where the redistribution layer includes a first surface connected to the separation layer 102 and an opposite second surface.
Step 2) manufacturing the rewiring layer comprises the following steps:
as shown in fig. 2, performing step 2-1), forming a first dielectric layer 201 on the surface of the separation layer 102 by using a chemical vapor deposition process or a physical vapor deposition process, where the material of the first dielectric layer 201 includes one or a combination of two or more of epoxy resin, silica gel, PI, PBO, BCB, silicon oxide, phosphosilicate glass, and fluorine-containing glass.
Preferably, the material of the first dielectric layer 201 is PI (polyimide), so as to further reduce the process difficulty and the process cost.
As shown in fig. 3, step 2-2) is performed, a sputtering process is used to form a first metal layer on the surface of the first dielectric layer 201, and the metal layer is etched to form a patterned first metal wiring layer 202. The material of the first metal wiring layer 202 includes one or a combination of two or more of copper, aluminum, nickel, gold, silver, and titanium.
As shown in fig. 4, performing step 2-3), forming a second dielectric layer 203 on the surface of the patterned first metal wiring layer 202 by using a chemical vapor deposition process or a physical vapor deposition process, and etching the second dielectric layer 203 to form the second dielectric layer 203 with the patterned through hole. The material of the second dielectric layer 203 includes one or a combination of more than two of epoxy resin, silica gel, PI, PBO, BCB, silicon oxide, phosphorosilicate glass and fluorine-containing glass.
Preferably, the material of the second dielectric layer 203 is PI (polyimide), so as to further reduce the process difficulty and the process cost.
As shown in fig. 4, performing step 2-4), filling conductive plugs into the patterned through holes, then forming a second metal layer on the surface of the second dielectric layer 203 by using a sputtering process, and etching the metal layer to form a patterned second metal wiring layer 204. The material of the second metal wiring layer 204 includes one or a combination of two or more of copper, aluminum, nickel, gold, silver, and titanium.
Next, as shown in fig. 5, the above steps 2-3) to 2-4) may be repeated to form a rewiring layer having a multilayer stack structure to realize different wiring functions.
As shown in fig. 6 to 7, step 3) is performed to provide metal pillars 302 and a metal solder 301, the metal solder 301 is melted by a laser heating process, the metal pillars 302 are implanted on the second surface of the redistribution layer through the metal solder 301, and the metal solder 301 is solidified, so that the metal pillars 302 are electrically connected to the redistribution layer.
For example, a metal pillar 302 with a metal solder 301 at the bottom is vertically placed on the surface of the rewiring layer, then the metal solder 301 is irradiated by laser at normal temperature to melt the metal solder, and after the metal solder is solidified, the metal pillar 302 and the rewiring layer are fixedly connected.
The radial width D of the metal pillar 302 is between 500 micrometers and 5000 micrometers, preferably, the radial width of the metal pillar 302 is between 1000 micrometers and 2000 micrometers, for example, the radial width of the metal pillar 302 may be 1100 micrometers, 1200 micrometers, 1500 micrometers, and the like.
The metal solder comprises tin or gold-tin alloy, and the material of the metal column comprises one of gold, silver, copper and aluminum. For example, the metal solder 301 may be a solder paste, the metal pillar 302 may be a copper pillar, and the metal solder 301 may effectively enhance the bonding strength between the metal pillar 302 and the redistribution layer, and reduce the resistance between the metal pillar 302 and the redistribution layer.
The metal solder completely covers the bottom of the metal column, and the metal column is perpendicular to the rewiring layer. The shape of the solidified metal solder is trapezoid, the height of the solder metal can be 500-5000 micrometers, the angle a of the lower base angle of the trapezoid ranges from 45 degrees to 90 degrees, the angle range of the solder metal can improve the effective support of the metal solder on the side wall of the metal column, the metal column can be ensured to be vertically arranged and is easy to deviate or crack with the rewiring layer in the subsequent process, and for example, when the angle of the lower base angle of the trapezoid ranges from 50 degrees to 70 degrees, the support effect is more remarkable. According to the invention, the metal column is prepared by the process, so that the metal solder can completely cover the bottom of the metal column, the stability of the metal column is greatly improved, meanwhile, the vertical arrangement of the metal column can be realized, the offset of the top end center and the tail end center of the metal column is avoided, and the process deviation is reduced. Furthermore, the metal column is prepared by the process, so that damage to the rewiring layer and the whole packaging structure caused by the traditional high-temperature reflow process can be avoided, and the process yield is greatly improved.
As shown in fig. 8 to 9, step 4) is performed next, the metal pillar 302 is encapsulated by an encapsulation layer 303, and the encapsulation layer 303 is thinned so that the top surface of the metal pillar 302 is exposed to the encapsulation layer 303.
As an example, the method for encapsulating the antenna structure with the encapsulation layer 303 includes one of compression molding, transfer molding, liquid encapsulation, vacuum lamination, and spin coating, and the material of the encapsulation layer 303 includes one of polyimide, silicone, and epoxy.
As shown in fig. 10, step 5) is performed to form an antenna metal layer 304 on the surface of the dielectric layer, where the antenna metal layer 304 is connected to the metal pillar 302.
Next, the above steps 2) to 5) may be repeated to form a multi-layer stacked antenna structure, for example, the number of times of the repetition is not less than two. The antenna structure layer with the multilayer structure can be obtained through the steps, the multilayer antenna structure has certain loss, and the loss of the multilayer antenna structure can be greatly reduced by adopting the metal column 302 with larger diameter and lower loss.
As shown in fig. 11, step 6) is performed next, in which the encapsulation layer 303 and the supporting substrate 101 are peeled off based on the separation layer 102, and the first surface of the rewiring layer is exposed.
Specifically, the separation layer 102 includes a light-to-heat conversion layer, which is irradiated with laser light to separate the light-to-heat conversion layer from the encapsulation layer 303 and the supporting substrate 101, thereby peeling the rewiring layer and the supporting substrate 101.
As shown in fig. 12, step 7) is performed to provide an antenna circuit chip 401, and the antenna circuit chip 401 is bonded to the first surface of the redistribution layer, so that the antenna circuit chip 401 is electrically connected to the antenna metal layer 304 through the redistribution layer and the metal pillar 302. For example, the antenna circuit chip 401 may be bonded to the first surface of the redistribution layer by a soldering process or a ball bonding process, so that the antenna circuit chip 401 is electrically connected to the redistribution layer.
For example, the antenna circuit chip 401 includes one or both of an active component and a passive component, wherein the active component includes one of a power management circuit, a transmitting circuit and a receiving circuit, and the passive component includes one of a resistor, a capacitor and an inductor.
As shown in fig. 13, step 8) is finally performed to form a metal bump 501 on the first surface of the redistribution layer, so as to achieve electrical extraction of the redistribution layer.
As shown in fig. 13, this embodiment further provides an antenna package structure, where the antenna package structure includes: a rewiring layer including a first side and an opposing second side; metal pillars 302 fixed and electrically connected to the second surface of the redistribution layer by metal solders 301, the metal solders 301 completely cover the bottoms of the metal pillars, and the metal pillars 302 are perpendicular to the redistribution layer; an encapsulation layer 303, which covers the metal pillar 302 and has a top surface exposing the metal pillar 302; an antenna metal layer 304 formed on the package layer 303, the antenna metal layer 304 being connected to the metal pillar 302; an antenna circuit chip 401 bonded to the first surface of the redistribution layer and electrically connected to the antenna metal layer 304 through the redistribution layer and the metal pillar 302; and a metal bump 501 formed on a first surface of the redistribution layer to electrically extract the redistribution layer.
The radial width of the metal pillar 302 is between 500 micrometers and 5000 micrometers, preferably, the radial width of the metal pillar 302 is between 1000 micrometers and 2000 micrometers, for example, the radial width of the metal pillar 302 may be 1100 micrometers, 1200 micrometers, 1500 micrometers, and the like.
The metal solder comprises tin or gold-tin alloy, and the material of the metal column comprises one of gold, silver, copper and aluminum. For example, the metal solder 301 may be a solder paste, the metal pillar 302 may be a copper pillar, and the metal solder 301 may effectively enhance the bonding strength between the metal pillar 302 and the redistribution layer, and reduce the resistance between the metal pillar 302 and the redistribution layer.
The metal solder completely covers the bottom of the metal column, and the metal column is perpendicular to the rewiring layer. The shape of the solidified metal solder is trapezoid, the height of the solder metal can be 500-5000 micrometers, the angle of the lower base angle of the trapezoid ranges from 45 degrees to 90 degrees, the angle range of the solder metal can improve the effective support of the metal solder on the side wall of the metal column, the metal column can be ensured to be vertically arranged and is easy to deviate or crack with the rewiring layer in the subsequent process, and for example, when the angle of the lower base angle of the trapezoid ranges from 50 degrees to 70 degrees, the support effect is more remarkable. According to the invention, the metal column is prepared by the process, so that the metal solder can completely coat the bottom of the metal column, the stability of the metal column is greatly improved, meanwhile, the metal column can be vertically arranged, the deviation between the top center and the tail end center of the metal column is avoided, and the process deviation is reduced. According to the invention, the metal column is prepared by the process, so that damage to the rewiring layer and the whole packaging structure caused by the traditional high-temperature reflow process can be avoided, and the process yield is greatly improved.
The material of the encapsulation layer 303 includes one of polyimide, silicone, and epoxy resin.
The antenna circuit chip 401 includes one or two of an active component and a passive component, where the active component includes one of a power management circuit, a transmitting circuit and a receiving circuit, and the passive component includes one of a resistor, a capacitor and an inductor.
The metal bump 501 includes one of a tin solder, a silver solder, and a gold-tin alloy solder.
As described above, the antenna package structure and the antenna package method of the present invention have the following advantages:
the antenna packaging structure connects the metal column to the surface of the rewiring layer through the metal solder and the laser heating process, and the metal column with large diameter can be selected, so that the structural strength of the metal column is improved, the feeder loss can be reduced, and the efficiency and the performance of the antenna are improved.
According to the invention, the metal column is prepared by the process, so that the metal solder can completely coat the bottom of the metal column, the stability of the metal column is greatly improved, meanwhile, the metal column can be vertically arranged, the deviation between the top center and the tail end center of the metal column is avoided, and the process deviation is reduced.
According to the invention, the metal column is prepared by the process, so that damage to the rewiring layer and the whole packaging structure caused by the traditional high-temperature reflow process can be avoided, and the process yield is greatly improved.
The invention adopts the fan-out type packaging method to package the antenna structure, can effectively reduce the packaging volume, enables the antenna packaging structure to have higher integration level and better packaging performance, and has wide application prospect in the field of semiconductor packaging.
The foregoing embodiments are merely illustrative of the principles and utilities of the present invention and are not intended to limit the invention. Any person skilled in the art can modify or change the above-mentioned embodiments without departing from the spirit and scope of the present invention. Accordingly, it is intended that all equivalent modifications or changes which can be made by those skilled in the art without departing from the spirit and technical spirit of the present invention be covered by the claims of the present invention.
Claims (17)
1. An antenna package structure, comprising:
a rewiring layer including a first side and an opposing second side;
the metal column is fixed and electrically connected to the second surface of the rewiring layer through metal solder, the metal solder completely covers the bottom of the metal column, and the metal column is perpendicular to the rewiring layer;
the packaging layer wraps the metal column, and the top surface of the packaging layer is exposed out of the metal column;
the antenna metal layer is formed on the packaging layer and connected with the metal column;
the antenna circuit chip is combined on the first surface of the rewiring layer and is electrically connected with the antenna metal layer through the rewiring layer and the metal column; and
and the metal bump is formed on the first surface of the rewiring layer so as to realize the electrical leading-out of the rewiring layer.
2. The antenna package structure of claim 1, wherein: the shape of the solidified metal solder is trapezoidal, and the angle of the lower base angle of the trapezoid ranges from 45 degrees to 90 degrees.
3. The antenna package structure of claim 1, wherein: the metal solder comprises tin or gold-tin alloy, and the material of the metal column comprises one of gold, silver, copper and aluminum.
4. The antenna package structure of claim 1, wherein: the radial width of the metal column is between 100 and 5000 microns.
5. The antenna package structure of claim 4, wherein: the radial width of the metal column is between 1000 microns and 2000 microns.
6. The antenna package structure of claim 1, wherein: the material of the packaging layer comprises one of polyimide, silica gel and epoxy resin.
7. The antenna package of claim 1, wherein: the antenna circuit chip comprises one or two of an active component and a passive component, wherein the active component comprises one of a power management circuit, a transmitting circuit and a receiving circuit, and the passive component comprises one of a resistor, a capacitor and an inductor.
8. An antenna packaging method, characterized in that the packaging method comprises the steps of:
1) providing a supporting substrate, and forming a separation layer on the supporting substrate;
2) forming a rewiring layer on the separation layer, wherein the rewiring layer comprises a first surface connected with the separation layer and an opposite second surface;
3) providing a metal column and a metal solder, melting the metal solder by adopting a laser heating process, implanting the metal column on the second surface of the rewiring layer through the metal solder, and solidifying the metal solder, wherein the metal column is electrically connected with the rewiring layer;
4) packaging the metal column by using a packaging layer, and thinning the packaging layer to enable the top surface of the metal column to be exposed out of the packaging layer;
5) forming an antenna metal layer on the packaging layer, wherein the antenna metal layer is connected with the metal column;
6) peeling the rewiring layer and the support substrate based on the separation layer to expose a first surface of the rewiring layer;
7) providing an antenna circuit chip, and bonding the antenna circuit chip to the first surface of the rewiring layer, so that the antenna circuit chip is electrically connected with the antenna metal layer through the rewiring layer and the metal column; and
8) and forming a metal bump on the first surface of the rewiring layer to realize the electrical leading-out of the rewiring layer.
9. The method for packaging an antenna according to claim 8, wherein: the metal solder completely covers the bottom of the metal column, and the metal column is perpendicular to the rewiring layer.
10. The method for packaging an antenna according to claim 8, wherein: the shape of the solidified metal solder is trapezoidal, and the angle of the lower base angle of the trapezoid ranges from 45 degrees to 90 degrees.
11. The method for packaging an antenna according to claim 8, wherein: the metal solder comprises tin or gold-tin alloy, and the material of the metal column comprises one of gold, silver, copper and aluminum.
12. The method for packaging an antenna according to claim 8, wherein: the support base includes one of a glass substrate, a metal substrate, a semiconductor substrate, a polymer substrate, and a ceramic substrate.
13. The method for packaging an antenna according to claim 8, wherein: the separation layer includes a light-to-heat conversion layer, and step 6) irradiates the light-to-heat conversion layer with laser light to separate the light-to-heat conversion layer from the encapsulation layer and the supporting substrate, thereby peeling the rewiring layer and the supporting substrate.
14. The method for packaging an antenna according to claim 8, wherein: and 4) the method for packaging the metal column by adopting the packaging layer comprises one of compression molding, transfer molding, liquid seal molding, vacuum lamination and spin coating, and the material of the packaging layer comprises one of polyimide, silica gel and epoxy resin.
15. The method for packaging an antenna according to claim 8, wherein: the antenna circuit chip comprises one or two of an active component and a passive component, wherein the active component comprises one of a power management circuit, a transmitting circuit and a receiving circuit, and the passive component comprises one of a resistor, a capacitor and an inductor.
16. The method for packaging an antenna according to claim 8, wherein: the radial width of the metal column is between 100 and 5000 microns.
17. The method for packaging an antenna according to claim 16, wherein: the radial width of the metal column is between 1000 microns and 2000 microns.
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20120055748A (en) * | 2010-11-22 | 2012-06-01 | 앰코 테크놀로지 코리아 주식회사 | Continuous RDL process using gravure printing |
| CN103151275A (en) * | 2011-12-06 | 2013-06-12 | 北京大学深圳研究生院 | Manufacturing method for flip chip gold bumps |
| CN104201120A (en) * | 2014-08-28 | 2014-12-10 | 南通富士通微电子股份有限公司 | Semiconductor flip packaging method |
| US20150091187A1 (en) * | 2013-09-27 | 2015-04-02 | Freescale Semiconductor, Inc. | 3d device packaging using through-substrate posts |
| CN108417982A (en) * | 2018-05-09 | 2018-08-17 | 中芯长电半导体（江阴）有限公司 | The encapsulating structure and packaging method of antenna |
| CN211088260U (en) * | 2019-10-10 | 2020-07-24 | 中芯长电半导体（江阴）有限公司 | Antenna packaging structure |
-
2019
- 2019-10-10 CN CN201910959254.9A patent/CN112652604A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20120055748A (en) * | 2010-11-22 | 2012-06-01 | 앰코 테크놀로지 코리아 주식회사 | Continuous RDL process using gravure printing |
| CN103151275A (en) * | 2011-12-06 | 2013-06-12 | 北京大学深圳研究生院 | Manufacturing method for flip chip gold bumps |
| US20150091187A1 (en) * | 2013-09-27 | 2015-04-02 | Freescale Semiconductor, Inc. | 3d device packaging using through-substrate posts |
| CN104201120A (en) * | 2014-08-28 | 2014-12-10 | 南通富士通微电子股份有限公司 | Semiconductor flip packaging method |
| CN108417982A (en) * | 2018-05-09 | 2018-08-17 | 中芯长电半导体（江阴）有限公司 | The encapsulating structure and packaging method of antenna |
| CN211088260U (en) * | 2019-10-10 | 2020-07-24 | 中芯长电半导体（江阴）有限公司 | Antenna packaging structure |
Non-Patent Citations (1)
| Title |
|---|
| 朱桂兵: "《电子制造设备原理与维护》", 31 December 2011, 国防工业出版社, pages: 138 - 139 * |
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