CN112650025A - Positive photoresist composition and preparation method thereof - Google Patents
Positive photoresist composition and preparation method thereof Download PDFInfo
- Publication number
- CN112650025A CN112650025A CN202011537008.3A CN202011537008A CN112650025A CN 112650025 A CN112650025 A CN 112650025A CN 202011537008 A CN202011537008 A CN 202011537008A CN 112650025 A CN112650025 A CN 112650025A
- Authority
- CN
- China
- Prior art keywords
- titanium dioxide
- photoresist composition
- phenolic resin
- positive photoresist
- parts
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
- Y02E60/10—Energy storage using batteries
Abstract
The invention provides a positive photoresist composition and a preparation method thereof, wherein the positive photoresist composition comprises the following raw material components in parts by mass: 10-30 parts of titanium dioxide modified phenolic resin, 1-5 parts of photosensitizer, 0.1-0.3 part of organic silicon flatting agent and 40-70 parts of organic solvent; the titanium dioxide modified phenolic resin is phenolic resin with molecular chains grafted with nano titanium dioxide. The positive photoresist composition of the photoresist composition has the advantages of high photosensitive speed, high resolution, small line edge roughness and the like during light irradiation imaging.
Description
Technical Field
The invention relates to the technical field of photoetching, in particular to a positive photoresist composition and a preparation method thereof.
Background
The photoresist is a kind of etching-resistant film material whose solubility changes after being radiated by energy such as light beam, electron beam, ion beam, etc., and has wide application in the fine processing of integrated circuit and semiconductor discrete device. The photoresist is coated on semiconductor, conductor and insulator materials, the part left after exposure and development plays a role in protecting the bottom layer, and then the required fine pattern can be transferred to a substrate to be processed from a mask plate by etching with an etchant, so the photoresist is a key material in the fine processing technology. According to the difference of photochemical reaction mechanism, the photoresist is divided into a positive photoresist and a negative photoresist: after exposure, the solubility of the photoresist in a developing solution is increased, and the photoresist with the same pattern as that of the mask is obtained and is called as a positive photoresist; after exposure, the photoresist has reduced solubility or even no solubility in a developing solution, and a negative photoresist with a pattern opposite to that of the mask is obtained. Both types of photoresists have different application areas, and in general, positive photoresists are more commonly used, accounting for over 80% of the total photoresist.
With the increase of the integration level of integrated circuits and the reduction of the processing line width, the photolithography technology has undergone the development processes from G-line (436nm) photolithography, I-line (365nm) photolithography, deep ultraviolet 248nm photolithography and the current 193nm photolithography, and photoresists corresponding to various exposure wavelengths are also used. With the change of exposure wavelength, the composition and structure of the photoresist are also continuously changed, so that the comprehensive performance of the photoresist can meet the requirements of the integrated process. However, currently, a positive type photoresist of phenol resin-diazonaphthoquinone is used in the I-line lithography, and the photosensitivity and the resolution of the positive type photoresist are to be improved.
Disclosure of Invention
Based on the technical problems in the background art, the invention provides a positive photoresist composition and a preparation method thereof.
The invention provides a positive photoresist composition which comprises the following raw material components in parts by weight: 10-30 parts of titanium dioxide modified phenolic resin, 1-5 parts of photosensitizer, 0.1-0.3 part of organic silicon flatting agent and 40-70 parts of organic solvent;
the titanium dioxide modified phenolic resin is phenolic resin with molecular chains grafted with nano titanium dioxide.
Preferably, the phenolic resin with the molecular chain grafted with the nano titanium dioxide is formed by condensation reaction of the phenolic resin and the nano titanium dioxide modified by the epoxy group-containing silane coupling agent.
Preferably, the phenolic resin is a cresol-formaldehyde condensed resin with a molecular weight of 2000-20000.
Preferably, the epoxy group-containing silane coupling agent modified nano titanium dioxide is obtained by heating and reacting the epoxy group-containing silane coupling agent and the nano titanium dioxide in an alcohol solvent;
preferably, the epoxy-containing silane coupling agent is at least one of 3-glycidoxypropyltrimethoxysilane, 3-glycidoxypropylmethyldiethoxysilane, or 3-glycidoxypropyltriethoxysilane.
The phenolic resin with the molecular chain grafted with the nano titanium dioxide is prepared by carrying out ring-opening addition reaction on phenolic hydroxyl on the phenolic resin and epoxy groups on the nano titanium dioxide modified by the epoxy group-containing silane coupling agent, so that the nano titanium dioxide modified by the epoxy group-containing silane coupling agent is grafted on the phenolic resin, and the molecular chain of the phenolic resin is grafted with the nano titanium dioxide.
Preferably, the weight ratio of the phenolic resin to the epoxy group-containing silane coupling agent modified nano titanium dioxide is 7-12: 1.
Preferably, the photosensitizer is an esterified product of 2, 3, 4, 4' -tetrahydroxybenzophenone and 2, 1, 5-diazo naphthoquinone sulfonyl chloride or an esterified product of 2, 2', 4, 4' -tetrahydroxybenzophenone and 2, 1, 5-diazo naphthoquinone sulfonyl chloride;
preferably, the degree of esterification of the ester is 50 to 80%.
Preferably, the silicone leveling agent is at least one of polydimethylsiloxane or silicone oil.
Preferably, the organic solvent is at least one of ethyl lactate, ethyl acetate, n-butyl acetate, ethylene glycol monomethyl ether, diethylene glycol dimethyl ether, propylene glycol methyl ether acetate, propylene glycol monomethyl ether or diethylene glycol monomethyl ether.
Preferably, the positive photoresist composition further comprises at least one of a colorant, a plasticizer, or a surfactant.
The preparation method of the positive photoresist composition comprises the following steps: mixing the titanium dioxide modified phenolic resin, the photosensitizer, the organic silicon flatting agent and the organic solvent uniformly.
According to the positive photoresist composition provided by the invention, the titanium dioxide modified phenolic resin is introduced into the formula, so that when the photoresist composition is used for forming a film, the nano titanium dioxide can be effectively grafted on the phenolic film-forming resin, the heat resistance of the phenolic film-forming resin is improved, and the light absorption energy can be transferred to the photosensitizer due to the light absorption characteristic of the titanium dioxide, so that the diazo photosensitizer is promoted to be quickly and effectively decomposed, the damage of a hydrogen bond structure in the photoresist composition is accelerated, and the positive photoresist composition has the advantages of high photosensitive speed, high resolution, small line edge roughness and the like during light irradiation imaging.
Detailed Description
The photoresist composition provided by the invention belongs to a phenolic resin-diazonaphthoquinone positive photoresist composition, before exposure, phenolic hydroxyl groups of phenolic resin and diazonaphthoquinone can form a stable six-membered ring structure through hydrogen bonding, and the dissolution of the phenolic resin in a developing solution (such as tetramethyl ammonium hydroxide) is inhibited; after being irradiated by ultraviolet light, the diazonaphthoquinone in the exposure area is decomposed, the six-membered ring structure is destroyed, and the diazonaphthoquinone releases N2The ketene is formed, the ketene forms indene carboxylic acid when meeting water and is easily dissolved in dilute alkali water, the phenolic resin is dissolved in the alkali water, and the dissolution promotion effect occurs, thereby obtaining a positive image retained by the resist film in the unexposed area.
According to the photoresist composition provided by the invention, the titanium dioxide is added to modify the phenolic resin, and because the phenolic resin is grafted with the titanium dioxide, the titanium dioxide can absorb the energy of ultraviolet light, so that a photosensitizer coupled with the phenolic resin is quickly and effectively decomposed, and the damage of a hydrogen bond structure in the photoresist composition is accelerated, therefore, the photoresist composition has the advantages of high photosensitive speed, high resolution, small line edge roughness and the like during light irradiation imaging.
When the photoresist composition forms a photoresist pattern, the following steps can be specifically carried out:
first, the photoresist composition of the present invention is coated on a substrate by a roll coating method or a spin coating method. The substrate is preferably made of an oxide such as silicon, aluminum, indium, or tin. In order to remove the residual solvent of the photoresist composition coated on the substrate, vacuum drying may be performed under reduced pressure.
Then, the solid component in the photoresist composition is evaporated without thermal decomposition by soft baking treatment at 80 to 130 ℃. The concentration of the solvent is preferably minimized by soft baking until the thickness of the photoresist film on the substrate becomes less than 2 μm.
Thereafter, the substrate on which the photoresist film is formed is exposed, particularly to ultraviolet rays, using an appropriate mask or template, to form a pattern of a desired shape. And then, fully immersing the substrate after exposure in an alkaline developing aqueous solution until the photoresist film at the exposed part is completely or mostly dissolved. The developing aqueous solution is preferably an aqueous solution of ammonium hydroxide or tetramethylammonium hydroxide.
And then, taking the substrate with the exposed part dissolved and removed out of the developing solution, and then carrying out hard baking treatment, thereby improving the adhesiveness and chemical resistance of the photoresist film. This heat treatment is preferably carried out at a temperature below the softening point of the photoresist film, i.e., in the range of 90 to 150 ℃.
Finally, the developed substrate is treated with an etching solution or a gas plasma, and at this time, only the exposed portion of the substrate is treated, and the unexposed portion of the substrate is protected by the photoresist film. After the substrate is thus processed, the photoresist film is removed by an appropriate stripping agent, whereby a fine circuit pattern can be formed on the substrate.
Hereinafter, the technical solution of the present invention will be described in detail by specific examples, but these examples should be explicitly proposed for illustration, but should not be construed as limiting the scope of the present invention.
Example 1
A positive photoresist composition comprises the following raw material components by weight: 20g of a titanium dioxide-modified phenolic resin, 2g of 2, 3, 4, 4' -tetrahydroxybenzophenone-1, 2-diazonaphthoquinone-5-sulfonate (average degree of esterification 60%), 0.2g of polydimethylsiloxane, 10g of n-butyl acetate and 50g of propylene glycol monomethyl ether acetate;
wherein the titanium dioxide modified phenolic resin is synthesized by the following method: adding phenolic resin, 3-glycidyl ether oxypropyltriethoxysilane modified nano titanium dioxide and diethylenetriamine into toluene in a weight ratio of 9:1:0.1, uniformly mixing, heating to 110 ℃, stirring for reaction for 2 hours, and distilling to remove a solvent to obtain the titanium dioxide modified phenolic resin;
in the synthesis of the titanium dioxide modified phenolic resin, the phenolic resin is synthesized by the following method: adding 65 parts by weight of m-cresol, 35 parts by weight of p-cresol, 5 parts by weight of 3, 5-xylenol, 60 parts by weight of formalin solution (36.9 wt%) and 1 part by weight of oxalic acid into a reaction kettle, heating to 40 ℃ under the protection of nitrogen for reaction for 1 hour, then reacting at 60 ℃ for 2 hours, finally adding 1 part by weight of oxalic acid, heating to 100 ℃ for reaction for 4 hours, and distilling to remove water and unreacted monomers to obtain the phenolic resin;
the 3-glycidyl ether oxypropyltriethoxysilane-modified nano titanium dioxide is synthesized by the following method: dissolving 1 part by weight of 3-glycidoxypropyltriethoxysilane in ethanol, heating to 60 ℃, stirring for 30min, adding 5 parts by weight of nano titanium dioxide (with average particle size of 30nm), heating to 80 ℃, stirring for reaction for 4h, and removing the solvent to obtain the nano titanium dioxide modified by the 3-glycidoxypropyltriethoxysilane.
Example 2
A positive photoresist composition comprises the following raw material components by weight: 10g of a titanium dioxide-modified phenol resin, 1g of 2, 2', 4, 4' -tetrahydroxybenzophenone-1, 2-diazonaphthoquinone-5-sulfonate (average degree of esterification 60%), 0.3g of polydimethylsiloxane, 10g of ethylene glycol monomethyl ether, and 30g of propylene glycol monomethyl ether acetate;
wherein the titanium dioxide modified phenolic resin is synthesized by the following method: adding phenolic resin, 3-glycidoxypropyltrimethoxysilane modified nano titanium dioxide and diethylenetriamine into toluene in a weight ratio of 7:1:0.1, uniformly mixing, heating to 110 ℃, stirring for reaction for 2 hours, and distilling to remove a solvent to obtain the titanium dioxide modified phenolic resin;
in the synthesis of the titanium dioxide modified phenolic resin, the phenolic resin is synthesized by the following method: adding 55 parts by weight of m-cresol, 45 parts by weight of p-cresol, 60 parts by weight of formalin solution (36.9 wt%) and 1 part by weight of oxalic acid into a reaction kettle, heating to 40 ℃ under the protection of nitrogen for reaction for 1 hour, then reacting at 60 ℃ for 2 hours, finally adding 1 part by weight of oxalic acid, heating to 100 ℃ for reaction for 4 hours, and distilling to remove water and unreacted monomers to obtain the phenolic resin;
the 3-glycidoxypropyltrimethoxysilane modified nano titanium dioxide is synthesized by the following method: dissolving 1 part by weight of 3-glycidoxypropyltrimethoxysilane in ethanol, heating to 60 ℃, stirring for 30min, adding 5 parts by weight of nano titanium dioxide (with the average particle size of 30nm), heating to 80 ℃, stirring for reaction for 4h, and removing the solvent to obtain the nano titanium dioxide modified by the 3-glycidoxypropyltrimethoxysilane.
Example 3
A positive photoresist composition comprises the following raw material components by weight: 30g of a titanium dioxide-modified phenol resin, 5g of 2, 3, 4, 4' -tetrahydroxybenzophenone-1, 2-diazonaphthoquinone-5-sulfonate (average degree of esterification 75%), 0.1g of silicone oil, 20g of diethylene glycol dimethyl ether and 50g of propylene glycol methyl ether acetate;
wherein the titanium dioxide modified phenolic resin is synthesized by the following method: adding phenolic resin, 3-glycidoxy propyl methyl diethoxysilane modified nano titanium dioxide and diethylenetriamine into toluene according to the weight ratio of 12:9:0.1, uniformly mixing, heating to 110 ℃, stirring for reaction for 2 hours, and distilling to remove the solvent to obtain the titanium dioxide modified phenolic resin;
in the synthesis of the titanium dioxide modified phenolic resin, the phenolic resin is synthesized by the following method: adding 65 parts by weight of m-cresol, 35 parts by weight of p-cresol, 5 parts by weight of 3, 5-xylenol, 60 parts by weight of formalin solution (36.9 wt%) and 1 part by weight of oxalic acid into a reaction kettle, heating to 40 ℃ under the protection of nitrogen for reaction for 1 hour, then reacting at 60 ℃ for 2 hours, finally adding 1 part by weight of oxalic acid, heating to 100 ℃ for reaction for 4 hours, and distilling to remove water and unreacted monomers to obtain the phenolic resin;
the 3-glycidyl ether oxypropyltriethoxysilane-modified nano titanium dioxide is synthesized by the following method: dissolving 1 part by weight of 3-glycidoxypropyltriethoxysilane in ethanol, heating to 60 ℃, stirring for 30min, adding 5 parts by weight of nano titanium dioxide (with average particle size of 30nm), heating to 80 ℃, stirring for reaction for 4h, and removing the solvent to obtain the nano titanium dioxide modified by the 3-glycidoxypropyltriethoxysilane.
Comparative example 1
A positive photoresist composition comprises the following raw material components by weight: 20g of phenol resin, 3g of 2, 3, 4, 4' -tetrahydroxybenzophenone-1, 2-diazonaphthoquinone-5-sulfonate (average degree of esterification 60%), 0.2g of polydimethylsiloxane, 10g of n-butyl acetate and 50g of propylene glycol methyl ether acetate.
The phenolic resin is synthesized by the following method: adding 65 parts by weight of m-cresol, 35 parts by weight of p-cresol, 5 parts by weight of 3, 5-xylenol, 60 parts by weight of formalin solution (36.9 wt%) and 1 part by weight of oxalic acid into a reaction kettle, heating to 40 ℃ under the protection of nitrogen for reaction for 1 hour, then reacting at 60 ℃ for 2 hours, finally adding 1 part by weight of oxalic acid, heating to 100 ℃ for reaction for 4 hours, and distilling to remove water and unreacted monomers to obtain the phenolic resin.
The preparation method of the photoresist composition described above with respect to examples 1 to 3 and comparative example 1 includes: mixing phenolic resin, a photosensitizer, an organic silicon leveling agent and an organic solvent, and stirring for 4 hours at 50 ℃ to obtain the photoresist composition.
The photoresist compositions obtained in examples 1 to 3 and comparative example 1 were subjected to the following tests, and the results are shown in Table 1:
coating the photoresist compositions obtained in examples 1-3 and comparative example 1 on a silicon wafer by using a spin coater, and then, drying the silicon wafer coated with the photoresist composition in vacuum, and baking the silicon wafer at 100 ℃ for 60s to obtain a photoresist layer with the thickness of 0.75 μm;
and (3) detecting the mask plate by adopting a standard L/S (1: 1), respectively exposing the obtained photoresist layers by utilizing a light source of an I line (the wavelength is 365nm), and then respectively developing the exposed photoresist layers by utilizing a tetramethylammonium hydroxide solution with the mass fraction of 2.38 w% as a developing solution, wherein the developing time is 60S, so as to obtain a photoresist pattern.
1) Photosensitivity: expressed as the minimum exposure to obtain a pattern of 0.5 μm 1: 1.
2) Resolution ratio: finding the minimum line width, and performing SEM test on the slice to determine the size, namely the resolution.
3) Line edge roughness: observation with an electron microscope according to the following criteria: the line edge is a straight line and is narrow; poor-line edge is not a line, has width, and is wide at the edge.
TABLE 1 test results of photoresist compositions obtained corresponding to examples 1-3 and comparative examples 1-1
As can be seen from Table 1 above, the photosensitive speed and resolution of the photoresist compositions of the examples are significantly better than those of the comparative examples.
The above description is only for the preferred embodiment of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art should be considered to be within the technical scope of the present invention, and the technical solutions and the inventive concepts thereof according to the present invention should be equivalent or changed within the scope of the present invention.
Claims (10)
1. The positive photoresist composition is characterized by comprising the following raw material components in parts by mass: 10-30 parts of titanium dioxide modified phenolic resin, 1-5 parts of photosensitizer, 0.1-0.3 part of organic silicon flatting agent and 40-70 parts of organic solvent;
the titanium dioxide modified phenolic resin is phenolic resin with molecular chains grafted with nano titanium dioxide.
2. The positive photoresist composition according to claim 1, wherein the phenolic resin with the molecular chain grafted with the nano titanium dioxide is formed by condensation reaction of the phenolic resin and the nano titanium dioxide modified by the epoxy group-containing silane coupling agent.
3. The positive photoresist composition according to claim 2, wherein the phenolic resin is a cresol and formaldehyde condensed resin having a molecular weight of 2000-.
4. The positive photoresist composition according to claim 2 or 3, wherein the epoxy group-containing silane coupling agent-modified nano titanium dioxide is obtained by heating and reacting an epoxy group-containing silane coupling agent with nano titanium dioxide in an alcohol solvent;
preferably, the epoxy-containing silane coupling agent is at least one of 3-glycidoxypropyltrimethoxysilane, 3-glycidoxypropylmethyldiethoxysilane, or 3-glycidoxypropyltriethoxysilane.
5. The positive photoresist composition according to any one of claims 1 to 4, wherein the weight ratio of the phenolic resin to the epoxy group-containing silane coupling agent-modified nano titanium dioxide is 7-12: 1.
6. The positive-working photoresist composition according to any one of claims 1 to 5, wherein the photosensitizer is an esterified product of 2, 3, 4, 4' -tetrahydroxybenzophenone and 2, 1, 5-diazonaphthoquinone sulfonyl chloride or an esterified product of 2, 2', 4, 4' -tetrahydroxybenzophenone and 2, 1, 5-diazonaphthoquinone sulfonyl chloride;
preferably, the degree of esterification of the ester is 50 to 80%.
7. The positive photoresist composition according to any one of claims 1 to 6, wherein the silicone leveling agent is at least one of polydimethylsiloxane or silicone oil.
8. The positive photoresist composition according to any one of claims 1 to 7, wherein the organic solvent is at least one of ethyl lactate, ethyl acetate, n-butyl acetate, ethylene glycol monomethyl ether, diethylene glycol dimethyl ether, propylene glycol methyl ether acetate, propylene glycol monomethyl ether, or diethylene glycol monomethyl ether.
9. A positive photoresist composition according to any one of claims 1 to 8, further comprising at least one of a colorant, a plasticizer or a surfactant.
10. A method of making a positive photoresist composition, comprising: mixing the titanium dioxide modified phenolic resin, the photosensitizer, the organic silicon flatting agent and the organic solvent uniformly.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011537008.3A CN112650025B (en) | 2020-12-23 | 2020-12-23 | Positive photoresist composition and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011537008.3A CN112650025B (en) | 2020-12-23 | 2020-12-23 | Positive photoresist composition and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN112650025A true CN112650025A (en) | 2021-04-13 |
| CN112650025B CN112650025B (en) | 2023-05-26 |
Family
ID=75359384
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202011537008.3A Active CN112650025B (en) | 2020-12-23 | 2020-12-23 | Positive photoresist composition and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN112650025B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116156772A (en) * | 2022-12-28 | 2023-05-23 | 南通威斯派尔半导体技术有限公司 | AMB copper-clad ceramic circuit board and preparation method thereof |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002287339A (en) * | 2000-12-05 | 2002-10-03 | Kansai Research Institute | Active component and photosensitive resin composition using the same |
| US6534235B1 (en) * | 2000-10-31 | 2003-03-18 | Kansai Research Institute, Inc. | Photosensitive resin composition and process for forming pattern |
| US20030064320A1 (en) * | 2000-12-05 | 2003-04-03 | Makoto Hanabata | Active components and photosensitive resin composition containing the same |
| CN102432785A (en) * | 2011-09-14 | 2012-05-02 | 武汉理工大学 | Method for preparing in-situ dispersion nano polybasic graft modified phenolic resin |
| CN109062008A (en) * | 2018-08-21 | 2018-12-21 | 西陇科学股份有限公司 | A kind of ultraviolet positive photoresist |
| CN110441989A (en) * | 2019-08-07 | 2019-11-12 | 沧州信联化工有限公司 | A kind of photoetching compositions |
-
2020
- 2020-12-23 CN CN202011537008.3A patent/CN112650025B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6534235B1 (en) * | 2000-10-31 | 2003-03-18 | Kansai Research Institute, Inc. | Photosensitive resin composition and process for forming pattern |
| JP2002287339A (en) * | 2000-12-05 | 2002-10-03 | Kansai Research Institute | Active component and photosensitive resin composition using the same |
| US20030064320A1 (en) * | 2000-12-05 | 2003-04-03 | Makoto Hanabata | Active components and photosensitive resin composition containing the same |
| CN102432785A (en) * | 2011-09-14 | 2012-05-02 | 武汉理工大学 | Method for preparing in-situ dispersion nano polybasic graft modified phenolic resin |
| CN109062008A (en) * | 2018-08-21 | 2018-12-21 | 西陇科学股份有限公司 | A kind of ultraviolet positive photoresist |
| CN110441989A (en) * | 2019-08-07 | 2019-11-12 | 沧州信联化工有限公司 | A kind of photoetching compositions |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116156772A (en) * | 2022-12-28 | 2023-05-23 | 南通威斯派尔半导体技术有限公司 | AMB copper-clad ceramic circuit board and preparation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN112650025B (en) | 2023-05-26 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2540640B2 (en) | Thermostable phenolic resin compositions and their use in photosensitive compositions | |
| CN109844641B (en) | Environmentally stable thick film chemically amplified resists | |
| CN1074141C (en) | Low metal ions p-cresol oligomers and photosensitive compositions | |
| CN112650025B (en) | Positive photoresist composition and preparation method thereof | |
| JPH10120968A (en) | Resin composition for resist protection film, resist protection film and pattern producing method using the film | |
| JP3224602B2 (en) | Photosensitive substrate and method for forming resist pattern using the same | |
| CN112684661B (en) | Photoresist composition and preparation method thereof | |
| CN111538211B (en) | Phenolic resin photoresist composition and preparation method thereof | |
| JP2719640B2 (en) | Positive radiation-sensitive resin composition | |
| JP3135585B2 (en) | Positive photoresist composition containing 2,4-dinitro-1-naphthol | |
| JP3204465B2 (en) | Resist pattern forming material for semiconductor device manufacturing and pattern forming method using the same | |
| JP2527811B2 (en) | Developer for positive resist | |
| KR100414854B1 (en) | A method for separating novolak resin without high temperature distillation and a photoresist composition derived from a reservoir | |
| JP2006209099A (en) | Method for producing photoresist solution | |
| JPH06289612A (en) | Photosensitive composition | |
| JP2943138B2 (en) | Pattern formation method | |
| JP4759895B2 (en) | Resin for photoresist and photoresist composition | |
| JPH0561195A (en) | Positive type photoresist composition | |
| JP3529177B2 (en) | Photosensitive resin composition | |
| JPH04347857A (en) | Pattern forming method | |
| JP4302423B2 (en) | Resin for base material, base material, and multilayer resist pattern forming method | |
| JP3127415B2 (en) | Process control method in dry development of resist composition | |
| JP3224610B2 (en) | Positive photoresist composition | |
| JP2619050B2 (en) | Positive photosensitive composition | |
| JP3275501B2 (en) | Positive resist composition |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| TA01 | Transfer of patent application right | ||
| TA01 | Transfer of patent application right |
Effective date of registration: 20230508 Address after: Room 05, 20th Floor, Building 1, No. 201 Muhua Road, Shanghai Chemical Industry Zone, Fengxian District, Shanghai, 200000 Applicant after: Shanghai Tongcheng Electronic Materials Co.,Ltd. Address before: 236400 Room 201, building 5, Bailian innovation and Technology Industrial Park, 16 Xiaguang Avenue, Xingtang sub district office, Linquan County, Fuyang City, Anhui Province Applicant before: Fuyang Shenbang New Material Technology Co.,Ltd. |
|
| GR01 | Patent grant | ||
| GR01 | Patent grant |