CN112635646A - Wafer-level LED packaging structure applied to low thermal resistance - Google Patents
Wafer-level LED packaging structure applied to low thermal resistance Download PDFInfo
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- CN112635646A CN112635646A CN202110048690.8A CN202110048690A CN112635646A CN 112635646 A CN112635646 A CN 112635646A CN 202110048690 A CN202110048690 A CN 202110048690A CN 112635646 A CN112635646 A CN 112635646A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
Abstract
The invention discloses a wafer-level LED packaging structure applied to low thermal resistance, and relates to the technical field of LED packaging. Including LED subassembly, silica-based subassembly and radiator unit, the bottom of LED subassembly is provided with silica-based subassembly, the bottom of silica-based subassembly is provided with radiator unit, the LED subassembly includes the insulation board, the fixed LED chip that is provided with in top of insulation board, the bottom of LED chip is fixed in proper order and is provided with first electrode and second electrode, the top of LED chip has set gradually phosphor layer and resin layer. Through setting up LED subassembly and silicon-based subassembly, assemble through second current conducting plate or pin, avoided single connected mode, improved the device's suitability greatly, and when not using the pin assembly, rotate the pin and drive connecting cylinder and fixed pipe and break away from the connection, can take out the pin from the inside of spliced eye, do not occupy assembly space, made things convenient for user's operation.
Description
Technical Field
The invention relates to the technical field of LED packaging, in particular to a wafer-level LED packaging structure applied to low thermal resistance.
Background
The high-power LED has a plurality of applications in the fields of illumination, automotive electronics, display and the like, but the most concerned of the high-power LED product in practical application is the product life and luminous efficiency, namely the lumen number of unit power. The main factors influencing the service life and luminous efficiency of the LED product are mainly the design of the package structure, especially how the heat (accounting for about 25% of the input power) generated at the light emitting surface of the LED chip is transferred out of the package body through the package structure, besides the chip itself, and becomes the key for the performance of the high-power LED package.
Silicon-based formula LED encapsulation is with LED chip electrode guide to silicon substrate bottom increase heat radiating area, though improved the radiating efficiency greatly, but its single assembly methods also reduces the suitability, and conventional LED packaging structure is fixed simultaneously, and when outside factor leads to shaking, can directly cause the rigidity damage to the LED chip, lead to damaging, can't satisfy user's demand.
Disclosure of Invention
In order to achieve the purpose, the invention provides the following technical scheme: a wafer-level LED packaging structure applied to low thermal resistance comprises an LED assembly, a silicon-based assembly and a heat dissipation assembly, wherein the silicon-based assembly is arranged at the bottom of the LED assembly, the heat dissipation assembly is arranged at the bottom of the silicon-based assembly, the LED assembly comprises an insulating plate, an LED chip is fixedly arranged at the top of the insulating plate, a first electrode and a second electrode are sequentially and fixedly arranged at the bottom of the LED chip, a fluorescent powder layer and a resin layer are sequentially arranged at the top of the LED chip, and a first metal block and a second metal block are respectively and fixedly arranged at the bottoms of the first electrode and the second electrode;
the silicon-based component comprises a silicon substrate, the insulating plate is fixedly arranged at the top of the silicon substrate, two conductive blocks are arranged inside the silicon substrate, the tops of the two conductive blocks are fixedly connected with the bottoms of the first metal block and the second metal block respectively, a connecting groove is formed inside the conductive blocks, an inserting hole is formed inside the silicon substrate, a pin is arranged inside the inserting hole, one end of the pin extends into the connecting groove, and the other end of the pin extends to the outside of the silicon substrate;
the radiating assembly comprises a first radiating plate fixedly arranged at the bottom of the silicon substrate, two first conducting plates are arranged inside the first radiating plate, the tops of the two first conducting plates are fixedly connected with the bottoms of the two conducting blocks respectively, and the bottoms of the first conducting plates are fixedly connected with a second conducting plate through a first buffering assembly;
the first buffer assembly comprises a first fixed cylinder fixedly arranged at the bottom of the first current-conducting plate, a first fixed rod is movably arranged inside the first fixed cylinder, the bottom of the first fixed rod is fixedly connected with the top of the second current-conducting plate, a first middle plate is fixedly arranged at the top of the first fixed rod, and first springs are arranged at the top and the bottom of the first middle plate.
As a preferable technical solution of the present invention, the surfaces of the first metal block and the second metal block are both fixedly connected with the inside of the insulating plate, the top of the insulating plate is fixedly provided with a light reflecting plate, and the inside of the light reflecting plate is provided with a placing hole.
As a preferable technical solution of the present invention, the surface of the LED chip is movably sleeved with the inside of the placing hole, the top of the reflector is fixedly provided with a light collecting seat, the top of the light collecting seat is fixedly provided with a lens, and the resin layer is located below the lens.
As a preferred technical solution of the present invention, a gold wire is fixedly disposed at the bottom of the first conductive plate, the bottom end of the gold wire is fixedly connected to the top of the second conductive plate, the bottom of the first heat dissipation plate is fixedly connected to a second heat dissipation plate through a second buffer assembly, and the second buffer assembly includes a second fixing cylinder fixedly disposed at the bottom of the first heat dissipation plate.
As a preferred technical solution of the present invention, a second fixing rod is movably disposed inside the second fixing cylinder, a second middle plate is fixedly disposed at the top of the second fixing rod, and second springs are disposed at the top and the bottom of the second middle plate.
As a preferred technical scheme of the present invention, a clamping strip is fixedly disposed inside the connecting groove, one side of the clamping strip is bent and movably connected with the surface of the pin, a fixed pipe is fixedly disposed inside the inserting hole, a connecting cylinder is sleeved on an internal thread of the fixed pipe, and the inside of the connecting cylinder is fixedly sleeved with the surface of the pin.
As a preferred technical scheme of the present invention, two connection holes are formed in the silicon substrate, a heat conduction sleeve is fixedly disposed in each connection hole, the surfaces of the two conductive blocks are respectively and fixedly sleeved with the interiors of the two heat conduction sleeves, and each heat conduction sleeve is a heat conduction rubber sleeve.
As a preferable technical solution of the present invention, two first insulating holes are formed in the first heat dissipation plate, and the surfaces of the two first conductive plates are movably sleeved in the two first insulating holes, respectively.
As a preferable technical solution of the present invention, two second insulating holes are formed in the second heat dissipation plate, and the surfaces of the two second conductive plates are movably sleeved in the two second insulating holes respectively.
As a preferred technical scheme of the invention, a protective pad is fixedly arranged at the bottom of the first heat dissipation plate, dust screens are fixedly arranged around the protective pad, the bottom of the protective pad is fixedly connected with the top of the second heat dissipation plate, and the protective pad is a rubber pad.
Advantageous effects
Compared with the prior art, the invention provides a wafer-level LED packaging structure applied to low thermal resistance, which has the following beneficial effects:
1. this be applied to wafer level LED packaging structure of low thermal resistance through setting up LED subassembly and silicon-based subassembly, assembles through second current conducting plate or pin, has avoided single connected mode, has improved the device's suitability greatly, and when not using the pin assembly, rotates the pin and drives connecting cylinder and fixed pipe disconnection, can follow the inside of spliced eye with the pin and take out, does not occupy assembly space, has made things convenient for user's operation.
2. This be applied to wafer level LED packaging structure of low thermal resistance through setting up LED subassembly, silica-based subassembly and radiator unit, the setting of first heating panel, second heating panel, first buffer unit and second buffer unit has increased heat radiating area, and for only relying on the silicon substrate heat dissipation, the device's radiating efficiency is higher, has guaranteed LED chip's life.
3. This be applied to wafer level LED packaging structure of low thermal resistance, through setting up radiator unit, drive first current conducting plate vibrations when the vibrations of second current conducting plate, the first spring of first intermediate lamella conflict top or bottom cushions, has avoided causing LED chip rigidity damage when vibrations take place in adverse circumstances, cooperates the second to cushion the subassembly, has further guaranteed the device's buffering effect.
4. The wafer-level LED packaging structure applied to low thermal resistance is provided with the heat dissipation assembly. Outside air passes through the dust screen and gets into and takes away the heat fast between first heating panel and the second heating panel, and the dust of having avoided simultaneously in the air gets into and leads to the unable condition that gives off of heat to appear attached to above-mentioned each parts, has guaranteed the radiating efficiency, and drives the shake of protection pad when first heating panel rocks for the dust of interception on the dust screen shakes off, has avoided the dust screen to block up, has further guaranteed the radiating efficiency.
Drawings
FIG. 1 is a schematic structural diagram of a wafer-level LED package structure with low thermal resistance according to the present invention;
FIG. 2 is a cross-sectional view of a wafer level LED package structure with low thermal resistance according to the present invention;
FIG. 3 is an enlarged view of the structure at A in FIG. 2;
FIG. 4 is an enlarged view of the structure at B in FIG. 2;
fig. 5 is a schematic structural diagram of an LED assembly applied to a wafer-level LED package structure with low thermal resistance according to the present invention.
In the figure: 1. an LED assembly; 11. an insulating plate; 12. an LED chip; 121. a first electrode; 122. a second electrode; 13. a reflector; 14. a light collecting base; 15. a phosphor layer; 16. a resin layer; 17. a lens; 18. a first metal block; 19. a second metal block; 2. a silicon-based component; 21. a silicon substrate; 22. connecting holes; 23. a conductive block; 24. a heat conducting sleeve; 25. connecting grooves; 251. clamping the strip; 26. inserting holes; 27. a fixed tube; 28. a connecting cylinder; 29. a pin; 3. a heat dissipating component; 31. a first heat dissipation plate; 32. a first insulating hole; 33. a first conductive plate; 331. gold thread; 34. a first buffer assembly; 341. a first fixed cylinder; 342. a first fixing lever; 343. a first intermediate plate; 344. a first spring; 35. a second conductive plate; 36. a second buffer assembly; 361. a second fixed cylinder; 362. a second fixing bar; 363. a second intermediate plate; 364. a second spring; 37. a second heat dissipation plate; 38. a second insulating hole; 39. a protective pad; 391. a dust screen.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Referring to fig. 1-5, a wafer-level LED package structure applied to low thermal resistance includes an LED assembly 1, a silicon-based assembly 2 and a heat dissipation assembly 3, the silicon-based assembly 2 is disposed at the bottom of the LED assembly 1, the heat dissipation assembly 3 is disposed at the bottom of the silicon-based assembly 2, the LED assembly 1 includes an insulating plate 11, an LED chip 12 is fixedly disposed at the top of the insulating plate 11, a first electrode 121 and a second electrode 122 are sequentially and fixedly disposed at the bottom of the LED chip 12, a phosphor layer 15 and a resin layer 16 are sequentially disposed at the top of the LED chip 12, and a first metal block 18 and a second metal block 19 are respectively and fixedly disposed at the bottoms of the first electrode 121 and the second electrode 122.
The silicon-based component 2 comprises a silicon substrate 21, the insulating plate 11 is fixedly arranged on the top of the silicon substrate 21, two conductive blocks 23 are arranged inside the silicon substrate 21, the tops of the two conductive blocks 23 are fixedly connected with the bottoms of the first metal block 18 and the second metal block 19 respectively, a connecting groove 25 is formed inside the conductive block 23, an inserting hole 26 is formed inside the silicon substrate 21, a pin 29 is arranged inside the inserting hole 26, one end of the pin 29 extends into the connecting groove 25, and the other end of the pin 29 extends to the outside of the silicon substrate 21.
The heat dissipation assembly 3 comprises a first heat dissipation plate 31 fixedly arranged at the bottom of the silicon substrate 21, two first conductive plates 33 are arranged in the first heat dissipation plate 31, the top of each first conductive plate 33 is fixedly connected with the bottom of each conductive block 23, the bottom of each first conductive plate 33 is fixedly connected with a second conductive plate 35 through a first buffering assembly 34, and the assembly is carried out through the second conductive plates 35 or the pins 29, so that a single connection mode is avoided, the applicability of the device is greatly improved, and when the pins 29 are not used for assembly, the pins 29 are rotated to drive the connecting cylinders 28 to be disconnected with the fixing pipes 27, so that the pins 29 can be taken out from the inside of the inserting holes 26, the assembly space is not occupied, and the operation of a user is facilitated.
The first buffer assembly 34 includes a first fixed cylinder 341 fixedly disposed at the bottom of the first conductive plate 33, a first fixed rod 342 is movably disposed inside the first fixed cylinder 341, the bottom of the first fixed rod 342 is fixedly connected with the top of the second conductive plate 35, a first intermediate plate 343 is fixedly disposed at the top of the first fixed rod 342, first springs 344 are disposed at the top and the bottom of the first intermediate plate 343, two first insulating holes 32 are disposed inside the first heat dissipation plate 31, the surfaces of the two first conductive plates 33 are movably sleeved with the insides of the two first insulating holes 32, the first insulating holes 32 are used for placing the first conductive plates 33, and simultaneously separate the first conductive plates 33 from the first heat dissipation plate 31, the second heat dissipation plate 37, the first buffer assembly 34, and the second buffer assembly 36 are disposed, the heat dissipation area is increased, the heat dissipation efficiency of the device is higher compared with the heat dissipation only by the silicon substrate 21, and the service life of the LED chip 12 is ensured.
As a specific technical solution of this embodiment, the surfaces of the first metal block 18 and the second metal block 19 are both fixedly connected to the inside of the insulating plate 11, the top of the insulating plate 11 is fixedly provided with the reflective plate 13, the inside of the reflective plate 13 is provided with a placing hole, the surface of the LED chip 12 is movably sleeved with the inside of the placing hole, the top of the reflective plate 13 is fixedly provided with the light collecting base 14, the top of the light collecting base 14 is fixedly provided with the lens 17, and the resin layer 16 is located below the lens 17.
In this embodiment, the light collecting seat 14 is arranged, the reflector 13 is matched to enable the light emitted by the LED chip 12 to be gathered together, the lens 17 protects the resin layer 16, the appearance of the device is more attractive, and the integrity of the device is guaranteed.
As a specific technical solution of this embodiment, a gold wire 331 is fixedly disposed at the bottom of the first conductive plate 33, the bottom end of the gold wire 331 is fixedly connected to the top of the second conductive plate 35, a second heat dissipation plate 37 is fixedly connected to the bottom of the first heat dissipation plate 31 through a second buffering assembly 36, the second buffering assembly 36 includes a second fixing cylinder 361 fixedly disposed at the bottom of the first heat dissipation plate 31, a second fixing rod 362 is movably disposed inside the second fixing cylinder 361, a second middle plate 363 is fixedly disposed at the top of the second fixing rod 362, second springs 364 are disposed at the top and the bottom of the second middle plate 363, two second insulating holes 38 are disposed inside the second heat dissipation plate 37, and the surfaces of the two second conductive plates 35 are movably sleeved with the insides of the two second insulating holes 38, respectively.
In this embodiment, the second insulating hole 38 is used for placing the second conductive plate 35 and separating the second conductive plate 35 from the second heat dissipation plate 37, the gold wire 331 is disposed, and the first buffer assembly 34 is engaged, so that the conduction between the first conductive plate 33 and the second conductive plate 35 is more stable, the second spring 364 at the top of the second middle plate 363 is compressed when the first heat dissipation plate 31 moves downwards to buffer, the second spring 364 at the bottom of the second middle plate 363 is compressed when the first heat dissipation plate 31 moves upwards to buffer, thereby avoiding the rigid damage to the LED chip 12 caused by the vibration in a severe environment, the first heat dissipation plate 31 drives the protection pad 39 to shake when the second buffer assembly 36 buffers, so that the dust screen 391 shakes, and the application prospect is broad.
As a specific technical solution of this embodiment, a clamping strip 251 is fixedly disposed inside the connecting groove 25, one side of the clamping strip 251 is bent and is movably connected with the surface of the pin 29, a fixing tube 27 is fixedly disposed inside the inserting hole 26, an internal thread of the fixing tube 27 is sleeved with a connecting cylinder 28, and the inside of the connecting cylinder 28 is fixedly sleeved with the surface of the pin 29.
In this embodiment, the setting of card strip 251 has increased the electrically conductive area of being connected of conducting block 23 and pin 29, and the design that card strip 251 was bent for card strip 251 is connected inseparabler with pin 29, rotates pin 29 and drives connecting cylinder 28 and rotate, makes connecting cylinder 28 and fixed pipe 27 break away from the connection, can take out pin 29 from the inside of spliced eye 26, has made things convenient for the user to install according to the demand.
As a specific technical solution of this embodiment, two connection holes 22 are formed in the silicon substrate 21, a heat conduction sleeve 24 is fixedly disposed inside the connection holes 22, the surfaces of the two conductive blocks 23 are respectively and fixedly sleeved with the insides of the two heat conduction sleeves 24, and the heat conduction sleeves 24 are heat conduction rubber sleeves.
In this embodiment, the heat conducting sleeve 24 is fixedly disposed inside the connecting hole 22, the heat conducting sleeve 24 can rapidly transfer the heat dissipated by the conductive block 23 to the silicon substrate 21, the first heat dissipating plate 31 and the first conductive plate 33, and the heat conducting sleeve 24 has good insulating property.
As a specific technical solution of this embodiment, a protection pad 39 is fixedly disposed at the bottom of the first heat dissipation plate 31, a dust screen 391 is fixedly disposed around the protection pad 39, the bottom of the protection pad 39 is fixedly connected to the top of the second heat dissipation plate 37, and the protection pad 39 is a rubber pad.
In this embodiment, the air passes through between dust screen 391 gets into first heating panel 31 and the second heating panel 37, first heating panel 31, second heating panel 37, first current conducting plate 33, second current conducting plate 35, the heat that first buffering subassembly 34 and second buffering subassembly 36 distribute is taken away, the dust in the air has been avoided simultaneously to get into and adheres to the condition that leads to the unable giving off of heat to appear on above-mentioned each part, the radiating efficiency has been guaranteed, protection pad 39 adopts the rubber pad preparation simultaneously, make protection pad 39 shake along with rocking of first heating panel 31, make the dust of interception on the dust screen 391 drop, the jam of dust screen 391 has been avoided, further guarantee radiating efficiency.
When the device is used, the device is assembled through the second conductive plate 35 or the pins 29, when the device is assembled without using the pins 29, the pins 29 are rotated to drive the connecting cylinder 28 to rotate, so that the connecting cylinder 28 is disconnected from the fixed pipe 27, the pins 29 can be taken out from the inside of the inserting holes 26, external air enters between the first heat dissipation plate 31 and the second heat dissipation plate 37 through the dustproof net 391, heat emitted by the first heat dissipation plate 31, the second heat dissipation plate 37, the first conductive plate 33, the second conductive plate 35, the first buffer assembly 34 and the second buffer assembly 36 is taken away, meanwhile, the arrangement of the dustproof net 391 avoids the situation that dust in the air enters and adheres to the parts to cause that the heat cannot be emitted, when the second conductive plate 35 vibrates to drive the first conductive plate 33, when the first conductive plate 33 moves downwards, the first spring 344 at the top of the first middle plate 343 is compressed for buffering, the first conductive plate 33 compresses the first spring 344 at the bottom of the first middle plate 343 to buffer when moving upwards, meanwhile, the first conductive plate 33 drives the first heat dissipation plate 31 to swing through the silicon substrate 21, the second spring 364 at the top of the second middle plate 363 to buffer when the first heat dissipation plate 31 moves downwards, the second spring 364 at the bottom of the second middle plate 363 to buffer when the first heat dissipation plate 31 moves upwards, rigid damage to the LED chip 12 caused by vibration in a severe environment is avoided, the protection pad 39 shakes when the first heat dissipation plate 31 swings, dust intercepted on the dust screen 391 shakes off, blockage of the dust screen 391 is avoided, and operation of the device is completed through the above steps.
To sum up, this wafer level LED packaging structure for low thermal resistance through setting up LED subassembly 1 and silicon-based subassembly 2, assembles through second current conducting plate 35 or pin 29, has avoided single connected mode, has improved the device's suitability greatly, and when not using pin 29 assembly, rotates pin 29 and drives connecting cylinder 28 and fixed pipe 27 and break away from the connection, can take out pin 29 from the inside of spliced eye 26, does not occupy assembly space, has made things convenient for user's operation.
It should be noted that, in this document, terms such as "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other identical elements in a process, method, article, or apparatus that comprises the element.
Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.
Claims (10)
1. The utility model provides a wafer level LED packaging structure for low thermal resistance, includes LED subassembly (1), silicon-based subassembly (2) and radiator unit (3), its characterized in that: the LED module comprises an LED assembly (1) and is characterized in that a silicon-based assembly (2) is arranged at the bottom of the LED assembly (1), a heat dissipation assembly (3) is arranged at the bottom of the silicon-based assembly (2), the LED assembly (1) comprises an insulating plate (11), an LED chip (12) is fixedly arranged at the top of the insulating plate (11), a first electrode (121) and a second electrode (122) are sequentially and fixedly arranged at the bottom of the LED chip (12), a fluorescent powder layer (15) and a resin layer (16) are sequentially arranged at the top of the LED chip (12), and a first metal block (18) and a second metal block (19) are respectively and fixedly arranged at the bottoms of the first electrode (121) and the second electrode (122);
the silicon-based component (2) comprises a silicon substrate (21), the insulating plate (11) is fixedly arranged at the top of the silicon substrate (21), two conductive blocks (23) are arranged inside the silicon substrate (21), the tops of the two conductive blocks (23) are fixedly connected with the bottoms of the first metal block (18) and the second metal block (19) respectively, a connecting groove (25) is formed inside the conductive block (23), a splicing hole (26) is formed inside the silicon substrate (21), a pin (29) is arranged inside the splicing hole (26), one end of the pin (29) extends to the inside of the connecting groove (25), and the other end of the pin (29) extends to the outside of the silicon substrate (21);
the heat dissipation assembly (3) comprises a first heat dissipation plate (31) fixedly arranged at the bottom of a silicon substrate (21), two first conductive plates (33) are arranged inside the first heat dissipation plate (31), the tops of the two first conductive plates (33) are fixedly connected with the bottoms of two conductive blocks (23) respectively, and the bottom of each first conductive plate (33) is fixedly connected with a second conductive plate (35) through a first buffer assembly (34);
the first buffer assembly (34) comprises a first fixed cylinder (341) fixedly arranged at the bottom of a first conductive plate (33), a first fixed rod (342) is movably arranged inside the first fixed cylinder (341), the bottom of the first fixed rod (342) is fixedly connected with the top of a second conductive plate (35), a first middle plate (343) is fixedly arranged at the top of the first fixed rod (342), and first springs (344) are arranged at the top and the bottom of the first middle plate (343).
2. The wafer-level LED package structure with low thermal resistance as claimed in claim 1, wherein: the surface of the first metal block (18) and the surface of the second metal block (19) are fixedly connected with the inside of the insulating plate (11), the top of the insulating plate (11) is fixedly provided with a light reflecting plate (13), and a placing hole is formed in the light reflecting plate (13).
3. The wafer-level LED package structure with low thermal resistance as claimed in claim 2, wherein: the LED light source is characterized in that the surface of the LED chip (12) is movably sleeved with the inside of the placing hole, a light collecting seat (14) is fixedly arranged at the top of the reflector (13), a lens (17) is fixedly arranged at the top of the light collecting seat (14), and the resin layer (16) is located below the lens (17).
4. The wafer-level LED package structure with low thermal resistance as claimed in claim 1, wherein: the fixed gold thread (331) that is provided with in bottom of first electrically conductive board (33), the bottom of gold thread (331) and the top fixed connection of second electrically conductive board (35), second buffering subassembly (36) fixedly connected with second heating panel (37) are passed through to the bottom of first heating panel (31), second buffering subassembly (36) are including fixed setting and the fixed section of thick bamboo (361) of second of first heating panel (31) bottom.
5. The wafer-level LED package structure with low thermal resistance as claimed in claim 4, wherein: a second fixing rod (362) is movably arranged in the second fixing barrel (361), a second middle plate (363) is fixedly arranged at the top of the second fixing rod (362), and second springs (364) are arranged at the top and the bottom of the second middle plate (363).
6. The wafer-level LED package structure with low thermal resistance as claimed in claim 1, wherein: the connecting structure is characterized in that a clamping strip (251) is fixedly arranged inside the connecting groove (25), one side of the clamping strip (251) is bent and is movably connected with the surface of the pin (29), a fixing pipe (27) is fixedly arranged inside the inserting hole (26), a connecting cylinder (28) is sleeved on the inner thread of the fixing pipe (27), and the inside of the connecting cylinder (28) is fixedly sleeved with the surface of the pin (29).
7. The wafer-level LED package structure with low thermal resistance as claimed in claim 1, wherein: two connecting holes (22) in quantity are formed in the silicon substrate (21), heat conducting sleeves (24) are fixedly arranged in the connecting holes (22), the surfaces of the two conducting blocks (23) are fixedly sleeved with the inner parts of the two heat conducting sleeves (24), and the heat conducting sleeves (24) are heat conducting rubber sleeves.
8. The wafer-level LED package structure with low thermal resistance as claimed in claim 1, wherein: two first insulating holes (32) are formed in the first heat dissipation plate (31), and the surfaces of the two first conductive plates (33) are movably sleeved with the interiors of the two first insulating holes (32) respectively.
9. The wafer-level LED package structure with low thermal resistance as claimed in claim 4, wherein: two second insulating holes (38) are formed in the second heat dissipation plate (37), and the surfaces of the two second conductive plates (35) are movably sleeved with the interiors of the two second insulating holes (38) respectively.
10. The wafer-level LED package structure with low thermal resistance as claimed in claim 1, wherein: the bottom of first heating panel (31) is fixed and is provided with protection pad (39), all fixed dust screen (391) that is provided with all around protection pad (39), the bottom of protection pad (39) and the top fixed connection of second heating panel (37), protection pad (39) are the rubber pad.
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| CN202110048690.8A CN112635646B (en) | 2021-01-14 | 2021-01-14 | Wafer-level LED packaging structure applied to low thermal resistance |
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| CN202110048690.8A CN112635646B (en) | 2021-01-14 | 2021-01-14 | Wafer-level LED packaging structure applied to low thermal resistance |
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| CN112635646B CN112635646B (en) | 2021-10-01 |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113707796A (en) * | 2021-10-22 | 2021-11-26 | 深圳市两岸光电科技有限公司 | Wafer-level LED packaging structure capable of dissipating heat |
| CN113966070A (en) * | 2021-10-20 | 2022-01-21 | 深圳市嘉海辉电子科技有限公司 | Packaging structure for manufacturing electronic element based on AI (Artificial Intelligence) packaging recognition system |
| CN114034021A (en) * | 2021-09-15 | 2022-02-11 | 深圳市华笙光电子有限公司 | Wafer-level LED packaging structure with low thermal resistance |
| CN115064511A (en) * | 2022-08-17 | 2022-09-16 | 广东长华科技有限公司 | Semiconductor packaging part with heat radiation structure |
| CN117276457A (en) * | 2023-11-23 | 2023-12-22 | 惠州市炬能量电子科技有限公司 | LED packaging structure and packaging method |
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