CN112635619A - Plasma processing method of crystalline silicon solar cell multilayer film and solar cell - Google Patents
Plasma processing method of crystalline silicon solar cell multilayer film and solar cell Download PDFInfo
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- CN112635619A CN112635619A CN202011518571.6A CN202011518571A CN112635619A CN 112635619 A CN112635619 A CN 112635619A CN 202011518571 A CN202011518571 A CN 202011518571A CN 112635619 A CN112635619 A CN 112635619A
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- 229910021419 crystalline silicon Inorganic materials 0.000 title claims abstract description 30
- 238000003672 processing method Methods 0.000 title claims abstract description 24
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 67
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 67
- 239000010703 silicon Substances 0.000 claims abstract description 67
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims abstract description 66
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 47
- 239000001257 hydrogen Substances 0.000 claims abstract description 46
- 238000000034 method Methods 0.000 claims abstract description 45
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 39
- 238000006243 chemical reaction Methods 0.000 claims abstract description 32
- 230000008021 deposition Effects 0.000 claims abstract description 30
- 238000007747 plating Methods 0.000 claims abstract description 30
- 238000002161 passivation Methods 0.000 claims abstract description 27
- 238000009832 plasma treatment Methods 0.000 claims abstract description 26
- 229910021529 ammonia Inorganic materials 0.000 claims abstract description 14
- 230000005284 excitation Effects 0.000 claims abstract description 8
- 150000002431 hydrogen Chemical class 0.000 claims abstract description 7
- 235000012431 wafers Nutrition 0.000 claims description 58
- 238000000576 coating method Methods 0.000 claims description 8
- 239000011248 coating agent Substances 0.000 claims description 6
- 238000007599 discharging Methods 0.000 claims description 3
- 230000000694 effects Effects 0.000 abstract description 6
- 230000002035 prolonged effect Effects 0.000 abstract description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 229910004205 SiNX Inorganic materials 0.000 description 4
- 239000012495 reaction gas Substances 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 238000002360 preparation method Methods 0.000 description 3
- 238000005137 deposition process Methods 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000007888 film coating Substances 0.000 description 1
- 238000009501 film coating Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910000069 nitrogen hydride Inorganic materials 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1868—Passivation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a plasma processing method of a crystalline silicon solar cell multilayer film and a solar cell, wherein the processing method comprises the following steps: firstly plating a plurality of films on one surface of a silicon wafer, and carrying out a plasma treatment process in an ammonia atmosphere after each film is plated, wherein the plasma treatment process comprises the following steps: after deposition of each layer of film is finished, ammonia gas with preset flow is introduced into the reaction furnace tube, hydrogen-containing plasma is generated through excitation, and hydrogen passivation is carried out on the silicon wafer; and plating a plurality of films on the other surface of the silicon wafer, and performing plasma treatment in an ammonia atmosphere after the film plating of each layer is finished, wherein the plasma treatment process comprises the following steps: and after the deposition of each layer of film is finished, introducing ammonia gas with preset flow into the reaction furnace tube, exciting to generate plasma containing hydrogen, and performing hydrogen passivation on the silicon wafer. In the multilayer film deposition procedure provided by the invention, plasma treatment is added, and the plasma in the ammonia atmosphere contains a large amount of hydrogen, so that a good passivation effect is achieved on the surface of the silicon wafer, the minority carrier lifetime of the silicon wafer is prolonged, and the photoelectric conversion efficiency of the cell is improved.
Description
Technical Field
The invention relates to the field of photovoltaic cells, in particular to a plasma processing method of a crystalline silicon solar cell multilayer film and a solar cell.
Background
In the manufacturing process of a crystalline silicon solar cell, a multilayer silicon nitride (SiNx) film or a multilayer silicon nitride (SiNx)/silicon oxynitride (SiOxNy) film is generally plated on the front surface of the cell, and the multilayer silicon nitride (SiNx)/silicon oxynitride (SiOxNy) film is used for reducing the reflection of sunlight on the front surface of the cell and passivating the surface of a silicon wafer. Meanwhile, the back surface of the battery is plated with an aluminum oxide (AlOx)/silicon nitride/silicon oxynitride multilayer film for passivating the back surface of the silicon wafer. With the higher and higher conversion efficiency of the crystalline silicon solar cell, the requirement on the passivation effect of the film is higher and higher.
Disclosure of Invention
In order to solve the problems in the prior art, the invention provides a plasma processing method of a crystalline silicon solar cell multilayer film and a solar cell, and the technical scheme is as follows:
the invention provides a plasma processing method of a multilayer film of a crystalline silicon solar cell, wherein in the process of plating the multilayer film on the crystalline silicon solar cell, firstly plating the multilayer film on one surface of a silicon wafer, and performing a plasma processing procedure in an ammonia atmosphere after each layer of film plating is finished, wherein the specific plasma processing procedure comprises the following steps: after the deposition of each layer of film is finished, ammonia gas with preset flow is introduced into the reaction furnace tube to excite and generate plasma containing hydrogen so as to perform hydrogen passivation on the silicon wafer;
and plating a plurality of films on the other surface of the silicon wafer, and performing a plasma treatment process in an ammonia atmosphere after each film plating is finished, wherein the specific plasma treatment process comprises the following steps: and after the deposition of each layer of film is finished, ammonia gas with preset flow is introduced into the reaction furnace tube to excite and generate plasma containing hydrogen, and hydrogen passivation is carried out on the silicon wafer.
Further, the process parameters for each plasma process are as follows: the flow of the introduced ammonia gas is more than 1slm, the plasma treatment time is more than 1 second, and the temperature is controlled at 350-500 ℃.
Further, the plasma treatment time is in the range of 5-300s in each plasma treatment process.
Furthermore, in each plasma treatment process, the flow range of the introduced ammonia gas is 3-10 slm.
Furthermore, in each plasma treatment process, the RF power range of the coating equipment is 5000-.
Further, the specific steps of plating a multilayer film on one surface of the silicon wafer are as follows:
s1, plating a first layer of film on one surface of the silicon wafer;
s2, after the first layer film deposition is finished, introducing ammonia gas with preset flow into the reaction furnace tube, and exciting to generate hydrogen-containing plasma so as to perform hydrogen passivation on the silicon wafer;
s3, stopping introducing ammonia gas within a preset time threshold range, and performing second layer film deposition;
s4, after the deposition of the second layer film in the step S3 is finished, ammonia gas with preset flow is introduced into the reaction furnace tube, and hydrogen-containing plasma is generated through excitation so as to perform hydrogen passivation on the silicon wafer;
s5, repeatedly executing the step S3 and the step S4.
Further, after step S5, the specific steps of plating the other surface of the silicon wafer with the multilayer film are as follows:
s6, plating a first layer of film on the other side of the silicon wafer;
s7, after the first layer film deposition is finished, introducing ammonia gas with preset flow into the reaction furnace tube, and exciting to generate hydrogen-containing plasma so as to perform hydrogen passivation on the silicon wafer;
s8, stopping introducing ammonia gas within a preset time threshold range, and performing second layer film deposition;
s9, after the deposition of the second layer film in the step S8 is finished, ammonia gas with preset flow is introduced into the reaction furnace tube, and hydrogen-containing plasma is generated through excitation so as to perform hydrogen passivation on the silicon wafer;
s10, repeatedly executing the step S8 and the step S9;
and S11, discharging the silicon wafers.
Further, before step S1, the method further includes two steps of loading silicon wafers into a boat and raising the temperature of the silicon wafers.
The invention also provides a solar cell, which comprises a silicon wafer prepared by the plasma processing method of the crystalline silicon solar cell multilayer film.
The technical scheme provided by the invention has the following beneficial effects:
a. according to the plasma processing method of the crystalline silicon solar cell multilayer film, ammonia plasma is added for processing in the multilayer film deposition process, the plasma in the ammonia atmosphere contains a large amount of hydrogen, so that a good passivation effect can be achieved on the surface of a silicon wafer, the minority carrier lifetime of the silicon wafer is prolonged, and the photoelectric conversion efficiency of the cell is improved;
b. the ammonia gas is used as a reaction gas in the coating preparation process, and the plasma treatment and the film deposition can be integrated into a process menu without adding other investment without additionally adding an air duct.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings needed to be used in the description of the embodiments will be briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.
Fig. 1 is a flow chart of a plasma processing method of a crystalline silicon solar cell multilayer film provided by an embodiment of the invention.
Detailed Description
In order to make the technical solutions of the present invention better understood, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
It should be noted that the terms "first," "second," and the like in the description and claims of the present invention and in the drawings described above are used for distinguishing between similar elements and not necessarily for describing a particular sequential or chronological order. It is to be understood that the data so used is interchangeable under appropriate circumstances such that the embodiments of the invention described herein are capable of operation in sequences other than those illustrated or described herein. Furthermore, the terms "comprises," "comprising," and "having," and any variations thereof, are intended to cover a non-exclusive inclusion, such that a process, method, apparatus, article, or device that comprises a list of steps or elements is not necessarily limited to those steps or elements expressly listed, but may include other steps or elements not expressly listed or inherent to such process, method, article, or device.
In an embodiment of the present invention, a plasma processing method for a multilayer film of a crystalline silicon solar cell is provided, referring to fig. 1, specifically, in the process of plating the multilayer film on the crystalline silicon solar cell, firstly plating the multilayer film on one side of a silicon wafer, and performing an ammonia atmosphere plasma processing procedure after each layer of film plating is finished, the specific plasma processing procedure is as follows: after the deposition of each layer of film is finished, ammonia gas with preset flow is introduced into the reaction furnace tube to excite and generate plasma containing hydrogen so as to perform hydrogen passivation on the silicon wafer; then plating a plurality of layers of films on the other surface of the silicon wafer, and performing a plasma treatment process in an ammonia atmosphere after each layer of film plating is finished, wherein the specific plasma treatment process comprises the following steps: and after the deposition of each layer of film is finished, ammonia gas with preset flow is introduced into the reaction furnace tube to excite and generate plasma containing hydrogen, and hydrogen passivation is carried out on the silicon wafer.
Wherein, the processing parameters of each plasma processing procedure are as follows: the flow of the introduced ammonia gas is larger than 1slm, and the flow range of the introduced ammonia gas is preferably 3-10 slm. The temperature is controlled at 350-500 ℃. The radio frequency power (radio frequency power) range of the coating equipment is 5000-. In the whole process of coating and plasma treatment, the furnace tube of the equipment is vacuumized, and the pressure is the air pressure in the reaction furnace tube.
The plasma treatment time is more than 1s, the plasma treatment time range is preferably 5-300 s(s), the treatment time is more important in treatment parameters, and if the treatment time is too short, the generated H amount is too small, and the passivation effect is not obvious; if the time is too long, damage may occur to the plated film due to too long a time to bombard the surface.
The principle of the plasma treatment process in an ammonia atmosphere after the completion of each coating is as follows: after one layer of film coating is finished, ammonia gas with preset flow is introduced into the reaction furnace, the ammonia gas is gradually diffused to the surface of the silicon wafer, under the action of an electric field excited by a radio frequency power supply (namely, voltage current (radio frequency power) is applied to the positive electrode and the negative electrode of the graphite boat to generate plasma, the radio frequency power supply is used for ionizing reaction gas), the reaction gas is decomposed into electrons, ions, active groups and the like, and NH is used for removing the ions3The hydrogen generated by ionization saturates dangling bonds on the surface of the silicon wafer to achieve the passivation effect, the surface recombination rate is reduced, the minority carrier service life is prolonged, and therefore the photoelectric conversion efficiency of the cell is improved.
The plasma kinetic energy is used for decomposing gas introduced into the reaction furnace chamber, and the formula is as follows:
NH3+e→NH2HN, N, H + e, wherein e is an electron.
Specifically, the specific steps of plating a multilayer film on one side of a silicon wafer are as follows:
s1, plating a first layer of film on one surface of the silicon wafer;
s2, after the first layer film deposition is finished, introducing ammonia gas with preset flow into the reaction furnace tube, and exciting to generate hydrogen-containing plasma so as to perform hydrogen passivation on the silicon wafer;
s3, stopping introducing ammonia gas within a preset time threshold range, and performing second layer film deposition;
s4, after the deposition of the second layer film in the step S3 is finished, ammonia gas with preset flow is introduced into the reaction furnace tube, and hydrogen-containing plasma is generated through excitation so as to perform hydrogen passivation on the silicon wafer;
s5, repeatedly executing the step S3 and the step S4;
after step S5, the specific steps of plating the other surface of the silicon wafer with a multilayer film are as follows:
s6, plating a first layer of film on the other side of the silicon wafer;
s7, after the first layer film deposition is finished, introducing ammonia gas with preset flow into the reaction furnace tube, and exciting to generate hydrogen-containing plasma so as to perform hydrogen passivation on the silicon wafer;
s8, stopping introducing ammonia gas within a preset time threshold range, and performing second layer film deposition;
s9, after the deposition of the second layer film in the step S8 is finished, ammonia gas with preset flow is introduced into the reaction furnace tube, and hydrogen-containing plasma is generated through excitation so as to perform hydrogen passivation on the silicon wafer;
s10, repeatedly executing the step S8 and the step S9;
and S11, discharging the silicon wafers.
In step S10, after the deposition of the nth film is finished, ammonia gas with a preset flow rate is introduced into the reaction furnace tube, a hydrogen-containing plasma is generated by excitation, so as to perform hydrogen passivation on the silicon wafer, and finally, in step S11, the silicon wafer is taken out of the boat.
Before step S1, the method further includes two steps of silicon wafer loading and silicon wafer temperature rising.
The plasma processing method of the crystalline silicon solar cell multilayer film is suitable for the front and back multilayer film preparation process.
The invention also provides a solar cell, which comprises a silicon wafer prepared by the plasma processing method of the crystalline silicon solar cell multilayer film.
The performances of the photovoltaic cell obtained by the plasma treatment method of the crystalline silicon solar cell multilayer film provided by the invention and the photovoltaic cell obtained by the traditional coating process are compared, and the comparison result is shown in table 1. In the plasma processing method of the crystalline silicon solar cell multilayer film, the time is 100s, the temperature is 450 ℃, and NH is adopted3The flow was 5slm, the radio frequency power was 6500W, and the pressure was 1400 mTorr.
TABLE 1 comparison of cell performance data obtained for cells treated according to the process of the present invention versus conventional processes
From the above table, the open-circuit voltage and the short-circuit current of the cell obtained by the plasma processing method of the crystalline silicon solar cell multilayer film provided by the invention are obviously increased, so that the absolute conversion efficiency of the cell is improved by 0.06%.
According to the plasma processing method of the crystalline silicon solar cell multilayer film, ammonia plasma is added for processing in the multilayer film deposition process, the plasma in the ammonia atmosphere contains a large amount of hydrogen, a good passivation effect can be achieved on the surface of a silicon wafer, the minority carrier lifetime of the silicon wafer is prolonged, and the photoelectric conversion efficiency of the cell is improved by improving the open-circuit voltage and the short-circuit current of the cell. Ammonia gas (NH)3) As SiNxA reaction gas in the membrane preparation process can be introduced into the reaction chamber through the existing pipeline, and NH can be introduced into the reaction chamber without additionally adding an air-introducing pipeline3The plasma treatment and the deposition of the film are integrated into a process menu (the plasma treatment is directly added into the coating process to synthesize a process) without adding other investment, a new control treatment unit is not required to be designed, and meanwhile, the intelligent operation is convenient.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents, improvements and the like that fall within the spirit and principle of the present invention are intended to be included therein.
Claims (9)
1. A plasma processing method of a multilayer film of a crystalline silicon solar cell is characterized in that in the process of plating the multilayer film on the crystalline silicon solar cell, firstly plating the multilayer film on one surface of a silicon wafer, and performing a plasma processing procedure in an ammonia atmosphere after each layer of film plating is finished, wherein the specific plasma processing procedure is as follows: after the deposition of each layer of film is finished, ammonia gas with preset flow is introduced into the reaction furnace tube to excite and generate plasma containing hydrogen so as to perform hydrogen passivation on the silicon wafer;
and plating a plurality of films on the other surface of the silicon wafer, and performing a plasma treatment process in an ammonia atmosphere after each film plating is finished, wherein the specific plasma treatment process comprises the following steps: and after the deposition of each layer of film is finished, ammonia gas with preset flow is introduced into the reaction furnace tube to excite and generate plasma containing hydrogen, and hydrogen passivation is carried out on the silicon wafer.
2. The plasma processing method of the crystalline silicon solar cell multilayer film as claimed in claim 1, wherein the processing parameters of each plasma processing procedure are as follows: the flow of the introduced ammonia gas is more than 1slm, the plasma treatment time is more than 1 second, and the temperature is controlled at 350-500 ℃.
3. The plasma processing method of the crystalline silicon solar cell multilayer film as claimed in claim 2, wherein the plasma processing time is in the range of 5 to 300s in each plasma processing procedure.
4. The plasma processing method of the crystalline silicon solar cell multilayer film as claimed in claim 2, wherein the flow range of the introduced ammonia gas is 3 to 10slm in each plasma processing procedure.
5. The plasma processing method of the crystalline silicon solar cell multilayer film as claimed in claim 2, wherein in each plasma processing procedure, the RF power range of the coating equipment is 5000-.
6. The plasma processing method of the crystalline silicon solar cell multilayer film as claimed in claim 1, characterized in that the specific steps of plating the multilayer film on one side of the silicon wafer are as follows:
s1, plating a first layer of film on one surface of the silicon wafer;
s2, after the first layer film deposition is finished, introducing ammonia gas with preset flow into the reaction furnace tube, and exciting to generate hydrogen-containing plasma so as to perform hydrogen passivation on the silicon wafer;
s3, stopping introducing ammonia gas within a preset time threshold range, and performing second layer film deposition;
s4, after the deposition of the second layer film in the step S3 is finished, ammonia gas with preset flow is introduced into the reaction furnace tube, and hydrogen-containing plasma is generated through excitation so as to perform hydrogen passivation on the silicon wafer;
s5, repeatedly executing the step S3 and the step S4.
7. The plasma processing method of the crystalline silicon solar cell multilayer film as claimed in claim 6, wherein after the step S5, the specific steps of plating the multilayer film on the other side of the silicon wafer are as follows:
s6, plating a first layer of film on the other side of the silicon wafer;
s7, after the first layer film deposition is finished, introducing ammonia gas with preset flow into the reaction furnace tube, and exciting to generate hydrogen-containing plasma so as to perform hydrogen passivation on the silicon wafer;
s8, stopping introducing ammonia gas within a preset time threshold range, and performing second layer film deposition;
s9, after the deposition of the second layer film in the step S8 is finished, ammonia gas with preset flow is introduced into the reaction furnace tube, and hydrogen-containing plasma is generated through excitation so as to perform hydrogen passivation on the silicon wafer;
s10, repeatedly executing the step S8 and the step S9;
and S11, discharging the silicon wafers.
8. The plasma processing method of the crystalline silicon solar cell multilayer film as claimed in claim 6, further comprising two procedures of silicon wafer loading and silicon wafer temperature rise before step S1.
9. A solar cell comprising a silicon wafer prepared by the plasma treatment method of the crystalline silicon solar cell multilayer film according to any one of claims 1 to 8.
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| CN101241953A (en) * | 2007-02-07 | 2008-08-13 | 北京中科信电子装备有限公司 | Method for improving quality of reflection reduction film of single crystal silicon solar battery |
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| CN107845702A (en) * | 2017-12-04 | 2018-03-27 | 浙江晶科能源有限公司 | The passivation layer processing method and crystal silicon solar batteries of a kind of crystalline silicon wafer |
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| KR20200125067A (en) * | 2019-04-25 | 2020-11-04 | 엘지전자 주식회사 | Manufacturing method of heterojunction solar cell |
-
2020
- 2020-12-21 CN CN202011518571.6A patent/CN112635619A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101241953A (en) * | 2007-02-07 | 2008-08-13 | 北京中科信电子装备有限公司 | Method for improving quality of reflection reduction film of single crystal silicon solar battery |
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| CN107845702A (en) * | 2017-12-04 | 2018-03-27 | 浙江晶科能源有限公司 | The passivation layer processing method and crystal silicon solar batteries of a kind of crystalline silicon wafer |
| KR20200125067A (en) * | 2019-04-25 | 2020-11-04 | 엘지전자 주식회사 | Manufacturing method of heterojunction solar cell |
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Application publication date: 20210409 |