CN112635580A - Silicon semiconductor sensor for space particle detection - Google Patents
Silicon semiconductor sensor for space particle detection Download PDFInfo
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- CN112635580A CN112635580A CN202011520206.9A CN202011520206A CN112635580A CN 112635580 A CN112635580 A CN 112635580A CN 202011520206 A CN202011520206 A CN 202011520206A CN 112635580 A CN112635580 A CN 112635580A
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 63
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 63
- 239000010703 silicon Substances 0.000 title claims abstract description 63
- 238000001514 detection method Methods 0.000 title claims abstract description 47
- 239000002245 particle Substances 0.000 title claims abstract description 42
- 239000004065 semiconductor Substances 0.000 title claims abstract description 41
- 239000010410 layer Substances 0.000 claims abstract description 58
- 238000004806 packaging method and process Methods 0.000 claims abstract description 44
- 239000011241 protective layer Substances 0.000 claims abstract description 9
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical group [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 8
- 229910052751 metal Inorganic materials 0.000 claims abstract description 7
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- 239000002994 raw material Substances 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 3
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/02002—Arrangements for conducting electric current to or from the device in operations
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/02002—Arrangements for conducting electric current to or from the device in operations
- H01L31/02005—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/115—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation
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Abstract
The invention discloses a silicon semiconductor sensor for space particle detection, comprising: the packaging structure comprises a silicon chip, a packaging shell and three cable leads; the packaging shell is of a cuboid structure, the silicon chip is packaged in the center of the interior of the packaging shell, the exposed center opening of the packaging shell corresponds to a detection sensitive area of the incident surface of the silicon chip, and three cable leads are respectively led out from two sides of the packaging shell; a circle of heavily doped structure is arranged on the outer edge of a detection sensitive area of the incident surface of the silicon chip to serve as a sensitive area protection ring, and an Al metal layer covers the surface of the detection sensitive area of the incident surface of the silicon chip; the packaging shell is formed by bonding three layers of structures, a copper wire and a lead bonding pad are arranged in the middle layer of the packaging shell, and an incident surface electrode, a back surface electrode and a protection ring electrode of the silicon chip are welded to the lead bonding pad through jumper wires; and the upper surface and the lower surface of the middle layer are respectively covered with two protective layers for protecting the copper wire and the lead bonding pad of the middle layer.
Description
Technical Field
The invention relates to the field of aerospace, in particular to a silicon semiconductor sensor for space particle detection.
Background
The semiconductor sensor is used for receiving charged particles incident into the probe, and the fully-depleted ion implantation type Si semiconductor sensor is the best detection sensor in terms of indexes such as linear response range, energy resolution and space applicability.
When the space charged particles are measured, the measured particles are incident to a P-N junction structure in the sensor, electron-hole pairs are excited, and an electric signal is generated, so that the measurement of the charged particles is realized. The silicon semiconductor sensor can realize detection of space high-energy electrons, intermediate-energy electrons, protons, LET spectrums and the like, and realize particle identification, analysis and the like of space charged particles with different energies through different probe designs.
The detection of the spatial high-energy particles is relatively mature, and the requirements on the performance indexes of the selected Si semiconductor sensor are relatively wide. However, with the development of the space environment detection technology, higher requirements are provided for the detection index and reliability of the space environment detection load, and how to realize the detection of electrons and protons in the energy range of 20keV or even below is a technical difficulty which is urgently needed to overcome at present. The detection of low-energy charged particles in the process of realization puts forward a very high requirement on the performance index of the semiconductor sensor, and the selected Si semiconductor sensor has smaller background noise and higher working stability.
Disclosure of Invention
The invention aims to overcome the technical problems and designs a low-noise and high-reliability Si semiconductor sensor in order to expand the detection capability of the energy range of the space charged particles. The incident surface of the sensor is designed into an ultrathin window, so that the energy loss of an insensitive layer (dead zone) of the incident window to the measured particles is reduced.
To achieve the above object, the present invention proposes a silicon semiconductor sensor for space particle detection, comprising: the packaging structure comprises a silicon chip, a packaging shell and three cable leads; the packaging shell is of a cuboid structure, the silicon chip is packaged in the center of the interior of the packaging shell, the exposed center opening of the packaging shell corresponds to a detection sensitive area of the incident surface of the silicon chip, and three cable leads are respectively led out from two sides of the packaging shell;
a circle of heavily doped structure is arranged on the outer edge of a detection sensitive area of the incident surface of the silicon chip to serve as a sensitive area protection ring, and an Al metal layer is covered on the surface of the detection sensitive area of the incident surface of the silicon chip and used for applying working voltage and leading out signals of the detection sensitive area;
the packaging shell is formed by bonding three layers of structures, a copper wire and a lead bonding pad are arranged in the middle layer of the packaging shell, and an incident surface electrode, a back surface electrode and a protection ring electrode of the silicon chip are welded to the lead bonding pad through jumper wires; the upper surface and the lower surface of the middle layer are respectively covered with two protective layers for protecting the copper wire and the lead bonding pad of the middle layer;
the three cable leads are a high-voltage wire, a ground wire and a protective loop wire, the high-voltage wire and the ground wire are used for applying working voltage to the silicon semiconductor sensor and leading out detection signals, and the protective loop wire is grounded and used for shielding interference signals of a non-sensitive area.
As an improvement of the device, the silicon chip is a PN junction structure which is made of high-grade high-purity high-resistance silicon wafers serving as raw materials through an ion implantation plasma chip process.
As an improvement of the device, the surface layers of the incident surface and the back surface of the silicon chip are plated with 150nm of metal aluminum.
As an improvement of the device, the packaging shell is made of aerospace-grade PCB materials.
As an improvement of the device, the four top corners of the packaging shell are respectively provided with a through hole for positioning and mounting.
As an improvement of the device, the inner wall of the square opening of the middle layer of the packaging shell is provided with a groove for fixing the silicon chip.
As a modification of the above device, the protective layer on the upper surface of the intermediate layer is a front cover layer, and a square opening with a size larger than that of the square opening of the intermediate layer is arranged at the center of the front cover layer; two square holes with the same size are arranged on the left side of the opening and used for reserving positions for pressure welding.
As an improvement of the above device, the protective layer on the lower surface of the middle layer is a rear covering layer, and a square opening with the same size as the square opening of the middle layer is arranged in the center of the rear covering layer; the upper part of the right side of the opening is provided with a square hole at the reserved position for wire welding, and the lower part of the right side of the opening is provided with a square hole at the reserved position for pressure welding.
The invention has the advantages that:
1. the sensor packaging shell has good consistency and accurate size, and the position tolerance of the mounting positioning hole is less than 0.02 mm; the aperture error is +0.02mm, and the external dimension error is less than-0.05 mm; the thickness error is less than 0.01mm, and the accurate physical structure after the machine is installed can be ensured; the lead-out cable of the sensor adopts the stress relief design of landfill sealing, so that the reliability is high; in addition, considering that the leakage current and noise of the sensor are increased under the condition of high environmental humidity, and the detection performance and the service life are influenced, the invention innovatively adopts the development scheme of fixedly sealing the edge of the silicon chip by the transparent silica gel, thereby greatly improving the steam resistance of the sensor, reducing the sensitivity of the sensor to the humidity and improving the application reliability. The invention passes the reliability screening tests of electric performance, nuclear performance, temperature, aging and the like required by aerospace grade, and can be applied to the detection of space charged particles;
2. the silicon semiconductor sensor can be used for detecting space charged particles, on one hand, the silicon semiconductor sensor is used for monitoring the in-orbit operation space environment of a satellite in real time, and on the other hand, the silicon semiconductor sensor can be used for early warning and forecasting of the space meteorological environment;
3. the silicon semiconductor sensor has the advantages of accurate structure, high surface flatness and good reliability, can be used in a superposition and combination manner, forms a telescope form to measure the charged particles in the space environment, and can realize measurement in different directions through a plurality of semiconductor measuring units;
4. the silicon semiconductor sensor has reliable performance and excellent index, the signal-to-noise ratio of a detection instrument is improved due to low noise, the low end of the detection index can be expanded to 20keV, and the detection capability of detecting a load in a space environment is improved;
5. the silicon semiconductor sensor realizes the technical breakthrough of development and development of the silicon semiconductor sensor for spaceflight and promotes the realization of localization;
6. the invention solves the technical difficulty of the current Si semiconductor sensor for domestic and aerospace use, the effective area of the developed sensor is 64mm2, the effective thickness is 300 mu m, the room temperature leakage current is less than 1.5nA, and the sensor passes the space level screening test. The sensor has excellent background noise index and stable working performance, and can realize the detection of charged particles with 20keV space environment.
Drawings
FIG. 1 is a schematic cross-sectional view of a silicon semiconductor sensor for spatial particle detection according to the present invention;
FIG. 2 is a design drawing of the middle layer of the package of the present invention;
FIG. 3 is a diagram of the design of the front cover layer of the package of the present invention;
FIG. 4 is a diagram of the design of the rear cover layer of the package of the present invention;
FIG. 5 is an overall view of a sensor package design of the present invention;
fig. 6 is a three-dimensional view of the package of the sensor of the present invention.
Detailed Description
The technical solution of the present invention will be described in detail below with reference to the accompanying drawings.
The invention provides a silicon semiconductor sensor for space particle detection, which mainly comprises a silicon chip, a packaging shell and a cable lead.
The silicon chip is a PN junction structure which is made by taking a high-grade high-purity high-resistance silicon wafer as a raw material through an ion implantation plasma chip process. A circle of heavily doped structure is designed at the outer edge of a sensitive region of an incidence surface of a silicon chip and is generally called as a sensitive region protection ring. The protection ring electrode is connected to a lead bonding pad of the packaging shell through a jumper wire, the protection ring structure not only ensures the accuracy of the area of the sensitive area, but also improves the working voltage range of the sensor and reduces noise. The surface of the sensitive region of the silicon chip is covered with an Al metal layer which is used as an electrode, and the Al metal layer is used for processing a working voltage and simultaneously used for leading out signals of the sensitive region.
The packaging shell is made of a space-level PCB material, the three-layer structure is bonded, the upper portion and the lower portion of the packaging shell are provided with protective layers, the middle layer is a packaging shell main body structure, the silicon chip is embedded in the center of the packaging shell and is fixed through glue, the middle layer of the packaging shell is provided with copper wiring and gold-plated lead bonding pads, and the silicon chip incidence surface electrode, the back surface electrode and the protection ring electrode are welded to the lead bonding pads in the middle layer through jumper wires. And the upper and lower protective layers of the packaging shell respectively cover the upper and lower surfaces of the middle layer and are used for protecting the copper wire and the lead bonding pad of the middle layer.
The sensor is designed with three leading-out cables, the three cable leads are a high-voltage wire, an earth wire and a protective loop wire, the high-voltage wire and the earth wire are used for applying working voltage to the silicon semiconductor sensor and leading out detection signals at the same time, and the protective loop wire is grounded and used for shielding interference signals of a non-sensitive area.
Specifically, the method comprises the following steps: the sensor is a cuboid structure, the central area is a detection sensitive area, and positioning mounting holes are designed at the positions of four vertex angles.
The incident surface of the sensor is a detection surface on which the charged particles to be detected are normally incident, a circle of heavily doped protection ring is prepared on the outer edge of the sensitive region, and the area of the sensitive region in the protection ring is 8mm multiplied by 8 mm. And 150nm of metal aluminum is plated on the surface layers of the incident surface and the back surface for signal collection.
And the sensitive area electrode is connected with a lead bonding pad of the packaging shell through a 32um Si/Al wire. Red high-voltage wires (signal wires), blue ground wires and white protection loop wires are respectively led out from two sides of the packaging shell.
The working principle of the sensor is as follows:
the semiconductor sensor Si chip is mainly made of high-purity intrinsic monocrystalline silicon material, P + type heavy doping is made on an incident surface, N + type heavy doping is made on a back surface, and a mature ion implantation process is adopted. Al is plated on the surface of the silicon chip for leading out electrode signals. The sensor cross-sectional structure is shown in fig. 1.
When no incident particle enters the Si semiconductor sensor, the insulation resistance is large, and the leakage current is small. When charged particles enter the sensitive region, electron-hole pairs are generated due to ionization, and under the action of an external electric field, electrons and holes respectively drift towards two poles, so that charges are induced on the collecting electrode.
When the charged particles to be measured enter the sensitive area of the sensor, the number of electron-hole pairs generated in the semiconductor by the incident particles with energy E is:
N＝E/ε0
ε0the energy consumed to average the ionization work, i.e., to generate a pair of electron holes, is averaged. The average work of ionization of Si was 3.62eV at room temperature.
The study shows that0The value is independent of the energy and type of the incident particle and the sensor type, which results in a linear relationship of the output pulse height to the energy, and thus the Si semiconductor sensor is able to measure the energy of the incident particle.
The Si semiconductor sensor designed by the invention is a special fully-depleted PN junction sensor, raw materials with larger rho value are selected, the P + and N + layers are reduced to be the thinnest, and proper high working voltage is applied, so that a depleted layer can be expanded to the whole thickness of the sensor, and an unspent part does not exist.
The fully depleted sensor can not only realize the detection of the energy of the incident particles, but also realize the identification of the particle types. The energy lost by the particle as it passes through it, Δ E, (i.e., dE/dx), is related to the energy and species incident on the particle, and if an E detector is used, the particle species can be determined by measuring Δ E.
Package design and implementation
The Si semiconductor sensor packaging shell is of an aerospace PCB structure, adopts 3 layers of design, is a top layer, a middle layer and a bottom layer respectively, adopts a bonding mode after board manufacturing, integrates 3 layers of PCBs, and the size of the bonded PCBs is as follows: 20X 12X 2.7mm3。
The intermediate level is packaging shell main part, and the design has electrode pad and wiring etc. and the intermediate level size: 20X 12X 1.564mm3As shown in fig. 2. Four positioning mounting holes with the diameter phi of 2mm are designed on the periphery of the packaging shell, the depth of the central groove is 0.897mm, and the width of the groove platform is 0.9mm, so that the packaging shell is used for supporting the Si chip. The central opening is 8.4 multiplied by 8.4mm2And the blocking of the sensitive area is avoided.
The front and rear covering layers are arranged on the upper and lower surfaces of the middle layer to cover the wiring of the middle layer to form protection, and the position of an electrode pad is vacant to form a groove structure, so that wire jumping welding of a Si chip and welding of a lead-out cable are facilitated. The front cover layer layout is shown in fig. 3:
the center of the PCB is 10.2 multiplied by 10.2mm2Through holes (position precision 0.02mm) with two 2.3X 2.5mm on the left side2And the square hole is reserved for pressure welding. 3.3X 3.27mm2The position is a wire welding reserved position.
The design of the rear cover layer is shown in FIG. 4, and the PCB board size of the rear cover layer is 20X 12X 0.564mm3. PCB dig 8.4X 8.4mm2Through holes with position accuracy of 0.02 mm. 3.43X 1.3mm above the right side of the through hole2The square hole is a reserved position for welding the lead. Lower right side 1.5X 2.73mm2And reserving positions for pressure welding.
The overall packaging design of the sensor is shown in fig. 5, and the position tolerance of the mounting positioning hole is 0.02 mm; the aperture error is +0.02 mm; the outer diameter of the PCB is 20mm multiplied by 12mm, and the error is better than-0.05 mm; the thickness error is better than 0.01 m.
A three-dimensional view of the sensor package is shown in fig. 6.
The invention has the creativity that:
1. the sensor has low noise and the room temperature leakage current is less than 1.5 nA. The method can be used for detecting the charged particles in the space environment through the screening test meeting the aerospace requirement.
2. The PCB packaging shell is provided with a routing channel for leading out a cable, the cable is led in along the channel, and after the cable is welded with the bonding pad, the channel is filled with specific glue and fixedly sealed. This design has fine stress relieving effect, has avoided the sensor in the later stage use operation process, and the cable is crooked etc. many times the atress and is caused the pad damage, improves and uses the reliability.
3. The development scheme of fixedly sealing the edge of the silicon wafer by using the transparent silica gel effectively improves the water vapor resistance of the sensor, reduces the sensitivity of the sensor to humidity and improves the performance reliability.
Finally, it should be noted that the above embodiments are only used for illustrating the technical solutions of the present invention and are not limited. Although the present invention has been described in detail with reference to the embodiments, it will be understood by those skilled in the art that various changes may be made and equivalents may be substituted without departing from the spirit and scope of the invention as defined in the appended claims.
Claims (8)
1. A silicon semiconductor sensor for spatial particle detection, the silicon semiconductor sensor comprising: the packaging structure comprises a silicon chip, a packaging shell and three cable leads; the packaging shell is of a cuboid structure, the silicon chip is packaged in the center of the interior of the packaging shell, the exposed center opening of the packaging shell corresponds to a detection sensitive area of the incident surface of the silicon chip, and three cable leads are respectively led out from two sides of the packaging shell;
a circle of heavily doped structure is arranged on the outer edge of a detection sensitive area of the incident surface of the silicon chip to serve as a sensitive area protection ring, and an Al metal layer is covered on the surface of the detection sensitive area of the incident surface of the silicon chip and used for applying working voltage and leading out signals of the detection sensitive area;
the packaging shell is formed by bonding three layers of structures, a copper wire and a lead bonding pad are arranged in the middle layer of the packaging shell, and an incident surface electrode, a back surface electrode and a protection ring electrode of the silicon chip are welded to the lead bonding pad through jumper wires; the upper surface and the lower surface of the middle layer are respectively covered with two protective layers for protecting the copper wire and the lead bonding pad of the middle layer;
the three cable leads are a high-voltage wire, a ground wire and a protective loop wire, the high-voltage wire and the ground wire are used for applying working voltage to the silicon semiconductor sensor and leading out detection signals, and the protective loop wire is grounded and used for shielding interference signals of a non-sensitive area.
2. The silicon semiconductor sensor for spatial particle detection according to claim 1, wherein the silicon chip is a PN junction structure made by an ion implantation plasma sheet process using a high-grade, high-purity, high-resistance silicon wafer as a raw material.
3. The silicon semiconductor sensor for spatial particle detection according to claim 1, wherein the silicon chip incident surface and the back surface are both plated with 150nm of aluminum metal.
4. The silicon semiconductor sensor for space particle detection according to claim 1, wherein the package housing is made of aerospace grade PCB material.
5. The silicon semiconductor sensor for space particle detection as recited in claim 1, wherein a through hole for positioning and mounting is provided at each of four corners of the package.
6. The silicon semiconductor sensor for spatial particle detection according to claim 1, wherein the inner wall of the square opening of the intermediate layer of the package housing is provided with a groove for fixing the silicon chip.
7. The silicon semiconductor sensor for spatial particle detection according to claim 6, wherein the protective layer on the upper surface of the intermediate layer is a front cover layer, and a square opening having a size larger than that of the square opening of the intermediate layer is provided at the center of the front cover layer; two square holes with the same size are arranged on the left side of the opening and used for reserving positions for pressure welding.
8. The silicon semiconductor sensor for spatial particle detection according to claim 7, wherein the protective layer on the lower surface of the intermediate layer is a rear cover layer, and a square opening having the same size as the square opening of the intermediate layer is provided at the center of the rear cover layer; the upper part of the right side of the opening is provided with a square hole at the reserved position for wire welding, and the lower part of the right side of the opening is provided with a square hole at the reserved position for pressure welding.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN117374146A (en) * | 2023-12-06 | 2024-01-09 | 山东大学 | Semiconductor detector and energy self-calibration and state monitoring method thereof |
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