CN112631068B - Correction method of layout Dense-3Bar-Dense structure - Google Patents
Correction method of layout Dense-3Bar-Dense structure Download PDFInfo
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- CN112631068B CN112631068B CN202011562996.7A CN202011562996A CN112631068B CN 112631068 B CN112631068 B CN 112631068B CN 202011562996 A CN202011562996 A CN 202011562996A CN 112631068 B CN112631068 B CN 112631068B
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- 238000000034 method Methods 0.000 title claims abstract description 27
- 238000012937 correction Methods 0.000 title claims abstract description 14
- 238000005457 optimization Methods 0.000 claims abstract description 15
- 238000012545 processing Methods 0.000 claims abstract description 12
- 230000000694 effects Effects 0.000 claims description 9
- 230000003287 optical effect Effects 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims description 3
- 230000007547 defect Effects 0.000 abstract description 7
- 238000013461 design Methods 0.000 abstract description 7
- 238000010586 diagram Methods 0.000 description 5
- 239000012634 fragment Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
- G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
- G03F7/70441—Optical proximity correction [OPC]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P90/00—Enabling technologies with a potential contribution to greenhouse gas [GHG] emissions mitigation
- Y02P90/30—Computing systems specially adapted for manufacturing
Abstract
The invention discloses a correction method of a layout Dense-3Bar-Dense structure, which comprises the following steps: selecting a Dense-3Bar-Dense structure in the layout, and decomposing and distinguishing each side of each Bar of the 3Bar structure in the Dense-3Bar-Dense structure; selecting each edge of each Bar in the 3 bars, and selecting edge sections with different lengths according to the positions of the edges and the key size dislocation of the layout; respectively carrying out target graph optimization treatment on each side of the 3Bar selected in a staggered manner; and adding an exposure auxiliary graph to the layout subjected to the target graph optimization processing. On the premise of ensuring that the characteristic size of the Dense-3Bar-Dense structure meets the design requirement, the invention reduces the disconnection risk of the 3Bar intermediate line, avoids the generation of short-distance angle diagonal angles, can avoid causing the new 3Bar intermediate line disconnection and bridging defects, and further improves the depth of field of the structure by adding an exposure auxiliary graph to the Dense-3Bar-Dense structure.
Description
Technical Field
The invention relates to the field of integrated circuit manufacturing, in particular to an optical proximity effect correction method for a layout Dense-3Bar-Dense structure.
Background
Along with the reduction of technical nodes, the Critical Dimension (CD) and the space period (Pitch) of the design layout are smaller and smaller, and the structure of the design layout is also more and more complex, so that the surrounding environmental factors need to be considered when the optical proximity effect of the layout is corrected. For a single 3Bar structure in the design layout, two independent lines (edge Bar) ensure enough depth of field (DOF) in the traditional optical proximity correction rule because there is enough space to redefine the target; the middle line (middle bar) often needs to be filled with the DOF under this process condition by appropriately increasing the Critical Dimension (CD). When the technical node is below 28nm, the critical dimension and the space period are smaller, the space range in which the 3Bar intermediate critical dimension can be increased is very limited, and in order to enable the 3Bar intermediate line to increase the critical dimension without causing bridge defect (bridge defect), the two independent lines on two sides need to be respectively moved outwards to ensure the maximum depth of field of the 3Bar structure.
As shown in fig. 1 and 2, for the Dense-3Bar-Dense structure, the 3Bar portion of the Dense-3Bar-Dense cannot be handled completely in the simple processing manner of the single 3Bar structure described above due to the restriction of the Dense pattern and design rules, because there is a possibility of causing 3Bar intermediate line breaks (pinch), the generation of near-distance angle diagonals (corner to corner), and the risk of causing bridge defects (bridge defect).
Disclosure of Invention
In the summary section, a series of simplified form concepts are introduced that are all prior art simplifications in the section, which are described in further detail in the detailed description section. The summary of the invention is not intended to define the key features and essential features of the claimed subject matter, nor is it intended to be used as an aid in determining the scope of the claimed subject matter.
The invention aims to provide a layout Dense-3Bar-Dense structure correction method capable of avoiding 3Bar intermediate line disconnection, generating near distance angle diagonal angles and causing bridging defects.
In order to solve the technical problems, the invention provides a correction method of a layout Dense-3Bar-Dense structure, which comprises the following steps:
s1, selecting a Dense-3Bar-Dense structure in a layout, and decomposing and distinguishing edges of a 3Bar structure in the Dense-3Bar-Dense structure;
s2, selecting each edge of each Bar of 3 bars, and selecting edge sections with different lengths in a staggered manner according to the positions of the edges and the key size of the layout;
s3, respectively carrying out target graph optimization treatment on each side of the 3Bar selected in a staggered manner;
s4, adding an exposure auxiliary graph to the layout subjected to target graph optimization processing, and adding exposure auxiliary graphs (SRAF) with safety parameters on two sides of 3 Bar.
Optionally, the method for modifying the layout Dense-3Bar-Dense structure is further improved, and step S2 includes: with the Dense structure as a reference, the distance from the end point of the selected segment of the outer side A of the independent line on both sides of the 3Bar to the Dense is a, the distance from the end point of the selected segment of the inner side B of the independent line on both sides to the end point of the side A is B, and the distance from the end points of the selected segments on both sides of the middle line to the end point of the side B is c.
Optionally, the correction method of the layout Dense-3Bar-Dense structure is further improved, and distances from different edges to the Dense are selected according to a critical dimension CD of the layout, wherein the distance ranges meet the following rules: a is more than or equal to 1/2 and is less than or equal to CD; b is more than or equal to 1/2 and less than or equal to CD; c is more than or equal to 1/2 and is less than or equal to CD.
Optionally, the method for modifying the layout Dense-3Bar-Dense structure is further improved, and the target graph optimization processing in step S3 includes: if the selected side is C, the target pattern is extended to the outside of the pattern according to the optical proximity effect and the etching effect, and the extension is determined by the actual process.
Optionally, the correction method of the layout Dense-3Bar-Dense structure is further improved, and the extension value range is 2nm-4nm.
Optionally, the method for modifying the layout Dense-3Bar-Dense structure is further improved, and the target graph optimization processing in step S3 includes: if the selected side is B, the target graph extends to the interior of the graph, and the extension of the side B is equal to that of the side C.
Optionally, the correction method of the layout Dense-3Bar-Dense structure is further improved, and the extension value range is 2nm-4nm.
Optionally, the method for modifying the layout Dense-3Bar-Dense structure is further improved, and the target graph optimization processing in step S3 includes: if the selected side is A, the target graph extends to the outside of the graph, and the extension of the side A is equal to that of the side B.
Optionally, the correction method of the layout Dense-3Bar-Dense structure is further improved, and the extension value range is 2nm-4nm.
According to the invention, the 3Bar target graph in the Dense-3Bar-Dense structure is optimized by selecting fragments with different lengths according to dislocation, so that the ping risk of the 3Bar intermediate line is effectively reduced; in addition, the method for selecting fragments with different lengths in a staggered way avoids the generation of a short-distance angle diagonal (corner to corner) in the process of optimizing the target graph, ensures that the characteristic size of the Dense-3Bar-Dense structure meets the design requirement, and does not cause the risk of new 3Bar intermediate line broken line and bridging defect. And the depth of field of the structure is further improved by adding an exposure auxiliary pattern to the structure of the Dense-3 Bar-Dense.
Drawings
The accompanying drawings are intended to illustrate the general features of methods, structures and/or materials used in accordance with certain exemplary embodiments of the invention, and supplement the description in this specification. The drawings of the present invention, however, are schematic illustrations that are not to scale and, thus, may not be able to accurately reflect the precise structural or performance characteristics of any given embodiment, the present invention should not be construed as limiting or restricting the scope of the numerical values or attributes encompassed by the exemplary embodiments according to the present invention. The invention is described in further detail below with reference to the attached drawings and detailed description:
FIG. 1 is a schematic diagram of a Dense-3Bar-Dense structure in a design layout
FIG. 2 is a schematic diagram showing the result of general processing of Dense-3Bar-Dense
FIG. 3 is a flow chart of the present invention.
FIG. 4 is a schematic diagram of the offset selection of each side of the Dense-3Bar-Dense in an embodiment of the invention.
FIG. 5 is a diagram of the optimization of the Dense-3Bar-Dense target graph in an embodiment of the present invention.
FIG. 6 is a schematic diagram showing simulation results of modified Dense-3Bar-Dense in comparison with the results before modification in an embodiment of the present invention.
Detailed Description
Other advantages and technical effects of the present invention will become more fully apparent to those skilled in the art from the following disclosure, which is a detailed description of the present invention given by way of specific examples. The invention may be practiced or carried out in different embodiments, and details in this description may be applied from different points of view, without departing from the general inventive concept. It should be noted that the following embodiments and features in the embodiments may be combined with each other without conflict. The following exemplary embodiments of the present invention may be embodied in many different forms and should not be construed as limited to the specific embodiments set forth herein. It should be appreciated that these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the technical solution of these exemplary embodiments to those skilled in the art.
Furthermore, it will be understood that, although the terms "first," "second," etc. may be used herein to describe various elements, parameters, components, regions, layers and/or sections, these elements, parameters, components, regions, layers and/or sections should not be limited by these terms. These terms are only used to distinguish one element, parameter, component, region, layer or section from another element, parameter, component, region, layer or section. Thus, a first element, parameter, component, region, layer or section discussed below could be termed a second element, parameter, component, region, layer or section without departing from the teachings of the example embodiments of the present invention.
A first implementation;
as shown in FIG. 3, the invention provides a method for correcting a layout Dense-3Bar-Dense structure, which comprises the following steps:
s1, selecting a Dense-3Bar-Dense structure in a layout, and decomposing and distinguishing edges of a 3Bar structure in the Dense-3Bar-Dense structure;
s2, selecting each edge of each Bar of 3 bars, and selecting edge sections with different lengths in a staggered manner according to the positions of the edges and the key size of the layout;
s3, respectively carrying out target graph optimization treatment on each side of the 3Bar selected in a staggered manner;
s4, adding an exposure auxiliary graph to the layout subjected to the target graph optimization processing.
A second implementation;
with continued reference to FIG. 3, the invention provides a method for correcting a layout Dense-3Bar-Dense structure, which comprises the following steps:
s1, selecting a Dense-3Bar-Dense structure in a layout, and decomposing and distinguishing edges of a 3Bar structure in the Dense-3Bar-Dense structure;
taking a Dense structure as a reference, wherein the distance from the end point of a selected segment of the outer side A of the independent line on two sides of the 3Bar to the Dense is a, the distance from the end point of a selected segment of the inner side B of the independent line on two sides to the end point of the side A is B, and the distance from the end points of the selected segments of the two sides of the middle line to the end point of the side B is c;
s2, selecting each side of 3Bar, and selecting side sections with different lengths according to the positions of each side and the critical dimension dislocation (distance) of the layout; selecting distances from different edges to Dense according to a key size CD of the layout, wherein the distance ranges meet the following rules: a is more than or equal to 1/2 and is less than or equal to CD; b is more than or equal to 1/2 and less than or equal to CD; c is more than or equal to 1/2 and less than or equal to CD;
s3, respectively carrying out target graph optimization treatment on each side of the 3Bar selected in a staggered manner;
if the selected edge is C, extending the target graph to the outside of the graph according to the optical proximity effect and the etching effect, wherein the extension is determined by an actual process;
if the selected side is B, extending the target graph to the interior of the graph, wherein the extension of the side B is equal to that of the side C;
if the selected side is A, extending the target graph to the outside of the graph, wherein the extension of the side A is equal to that of the side B;
wherein, no matter the selected side is A, B or C, the extension value range is 2nm-4nm, preferably 2nm, 3nm or 4nm;
s4, adding exposure auxiliary patterns to the layout subjected to target pattern optimization processing, namely adding exposure auxiliary patterns (SRAF) with safe parameters on two sides of 3 Bar.
Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. It will be further understood that terms, such as those defined in commonly used dictionaries, should be interpreted as having a meaning that is consistent with their meaning in the context of the relevant art and will not be interpreted in an idealized or overly formal sense unless expressly so defined herein.
The present invention has been described in detail by way of specific embodiments and examples, but these should not be construed as limiting the invention. Many variations and modifications may be made by one skilled in the art without departing from the principles of the invention, which is also considered to be within the scope of the invention.
Claims (3)
1. A correction method of a layout Dense-3Bar-Dense structure is characterized by comprising the following steps:
s1, selecting a Dense-3Bar-Dense structure in a layout, and decomposing and distinguishing each side of each Bar of the 3Bar structure in the Dense-3Bar-Dense structure;
s2, selecting each side of each Bar in the 3 bars, and selecting side sections with different lengths according to the positions of each side and the key size dislocation of the layout, wherein the method comprises the following steps:
taking a Dense structure as a reference, wherein the distance from the end point of a selected segment of the outer side A of the independent line on two sides of the 3Bar to the Dense is a, the distance from the end point of a selected segment of the inner side B of the independent line on two sides to the end point of the side A is B, and the distance from the end points of selected segments of the two sides C of the middle line to the end point of the side B is C;
s3, respectively carrying out target graph optimization processing on each side of the 3Bar selected in a staggered manner, wherein the target graph optimization processing comprises the following steps:
if the selected side is A, extending the target graph to the outside of the graph, wherein the extension of the side A is equal to that of the side B;
if the selected side is B, extending the target graph to the interior of the graph, wherein the extension of the side B is equal to that of the side C;
if the selected edge is C, extending the target graph to the outside of the graph according to the optical proximity effect and the etching effect, wherein the extension is determined by an actual process;
s4, adding an exposure auxiliary graph to the layout subjected to the target graph optimization processing.
2. The correction method of a layout Dense-3Bar-Dense structure according to claim 1, wherein: selecting distances from different edges to Dense according to a key size CD of the layout, wherein the distance ranges meet the following rules: a is more than or equal to 1/2 and is less than or equal to CD; b is more than or equal to 1/2 and less than or equal to CD; c is more than or equal to 1/2 and is less than or equal to CD.
3. The correction method of a layout Dense-3Bar-Dense structure according to claim 1, wherein: the extension value ranges from 2nm to 4nm.
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| CN202011562996.7A CN112631068B (en) | 2020-12-25 | 2020-12-25 | Correction method of layout Dense-3Bar-Dense structure |
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| CN202011562996.7A CN112631068B (en) | 2020-12-25 | 2020-12-25 | Correction method of layout Dense-3Bar-Dense structure |
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