CN1361450A - Optical proximity effect correcting method - Google Patents
Optical proximity effect correcting method Download PDFInfo
- Publication number
- CN1361450A CN1361450A CN 00137418 CN00137418A CN1361450A CN 1361450 A CN1361450 A CN 1361450A CN 00137418 CN00137418 CN 00137418 CN 00137418 A CN00137418 A CN 00137418A CN 1361450 A CN1361450 A CN 1361450A
- Authority
- CN
- China
- Prior art keywords
- corner
- pattern
- width
- serif
- patterns
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Abstract
The present invention is optical proximity effect correcting method. Margin line or hammer like pattern is utilized to avoid tail contraction of main pattern and to make the tail of main pattern after exposure approach initial design value in length with tailing end being slightly wider. The length approaching initial design can avoid incomplete contact or breakdown of metal interconnection lines caused by bad aligning. The slightly wider tail increases the technological tolerance of metal interconnection line.
Description
(Optical Proximity Correction, OPC) method particularly relate to a kind of method that is applicable to the correcting optical adjacency effect of the light shield that designs and produces metal interconnecting to the present invention relates to the optical proximity effect correction.
In integrated circuit flourish today, element downsizing and the integrated trend that is inevitable also are the important topics of all circles' develop actively.And in the manufacture process of integrated circuit, the lithography step then becomes the important key of decision element function.Raising gradually along with integrated level; component size is dwindled gradually; distance between element and the element also must be dwindled; therefore cause in the lithography step; design transfer produces deviation, for example, and when the pattern of a cover curtain; when utilizing lithography to transfer on the wafer, regular meeting takes place that right angle part in the pattern is passivated that (Rounding), pattern tail end shrink (Line-end Pull Up) and live width is reduced or phenomenon such as increase.This just the so-called optical proximity effect (OpticalProximity Effect, OPE).
These deviations are bigger in component size, or under the lower situation of integrated level, the counter productive that unlikely generation is too big, yet, in the integrated circuit of high integration, just badly influence the usefulness of element.For example, in the integrated circuit of high integration, the distance of element and element is very little, and the pattern line-width on transferring to wafer expands when swollen, very likely produces local pattern overlapping, opens circuit and cause.In other words, the lifting of integrated circuit effectiveness, that is, dwindle the lifting of available speed corresponding to size, little by little be subjected in a series of photolithography process, the fidelity that lacks pattern limits.
Form the factor of OPE, mainly comprise some optical considerations, for example light passes interference, the photoresistance technology that different pattern produced on the light shield, comprises baking temperature/time, reflected light that development waits, the out-of-flatness substrate produced and etch effect etc.When admissible scale error value reduced along with pattern dimension, design transfer just produced bigger deviation along with OPE.
In order to prevent key size deviation (the Critical DimensionVariation when making the transfer of mask pattern; CD Variation) phenomenon all can be carried out optical proximity effect correction (OPC) usually when making light shield.That is be that desire is exposed at the suprabasil master pattern of the semiconductor of wafer, utilize computing machine and package software computing to be calculated correction, obtain the as a result figure different with master pattern, again this computing machine of figure input is as a result filed.According to the resulting graphic making as a result of optical proximity effect correction (OPC) on light shield, light beam see through this light shield be projected in the suprabasil pattern of semiconductor can with master pattern much at one.
Generally speaking, the method of correcting optical adjacency effect is at main pattern (Main Pattern), that is on the master pattern of institute's desire transfer, corner to master pattern adds some corner serives (Serif), or add a hammerhead shape pattern (Hammerhead) at its terminal edge and do correction, the right angle part is passivated in the pattern to avoid as far as possible, and the tail end of pattern shrinks.
But along with the rising gradually of integrated level, component size is dwindled gradually, and the distance between element and the element also must be dwindled, that is circuit elements design rule (Design Rule) becomes tight.When the critical size (Critical Dimension) of this main pattern and the distance between the pattern narrow down to a certain degree,, also can't effectively avoid the tail end of this pattern to shrink even add corner serif or hammerhead shape pattern in the terminal corner of this main pattern.
Please refer to Figure 1A, a main pattern 100 (shown in the dotted line) to be transferred, comprise two figures: a horizontal stripe shape figure 100a and a vertical bar shape figure 100b (having only the part of demonstration among the figure), then, corner to main pattern 100 adds some corner serives, for example, add a corner serif 110 separately at the horizontal stripe shape figure 100a of main pattern 100 and the corner of vertical bar shape figure 100b.
Please refer to Figure 1B, be the partial enlarged drawing of this vertical bar shape figure 100b, wherein described the size and the position of the corner serif 110 that prior art added.For example: length 111 about 100-150nm of this corner serif 110, the width 112 of this corner serif 110 is greatly about 100-150nm, and this corner serif 110 is superimposed to each corner of this main pattern 100 with the ratio of length 113 (approximately 50nm) and width 114 (approximately 50nm).
Refer again to Figure 1A, but when the critical size and the distance between the pattern of this main pattern narrows down to a certain degree, for example: under deep UV exposure light source 248nm, the critical size of this main pattern is 0.18 micron, and the distance of horizontal stripe shape figure 100a and vertical bar shape figure 100b is during less than 0.2 micron, even the terminal corner at this main pattern adds the corner serif, also can't effectively avoid the tail end of this pattern to shrink, see the difference of dotted line and solid line among the figure.Solid line is depicted as the result behind this main pattern exposure among the figure, and dotted line is represented original main pattern 100.
Generally speaking, the adding of corner serif or hammerhead shape pattern, can reduce shift on the pattern, the deformation quantity in edge or corner.But, when the critical size that shifts pattern and the distance between the pattern narrow down to a certain degree,, still can't effectively avoid the tail end of this pattern to shrink if add corner serif or hammerhead shape pattern with the method and the ratio of prior art.
Therefore one object of the present invention just provides a kind of method of correcting optical adjacency effect, can utilize adding corner serif or hammerhead shape pattern effectively to avoid the tail end of main pattern to shrink.The size of these corner serives and ratio can be revised this main pattern and make tail end length after its exposure near original design, and aftermost breadth slightly is expansion.
To achieve these goals, the invention provides a kind of method of correcting optical adjacency effect: provide a main pattern to be transferred earlier, add one first auxiliary patterns to each corner of this main pattern, then, check the mutual spacing of main pattern that has added these first auxiliary patterns, when the spacing of this main pattern is too little, so that this first auxiliary patterns is when linking to each other with another first auxiliary patterns, each replaces this first auxiliary patterns with one second auxiliary patterns.
The invention has the advantages that auxiliary patterns by adding different size to main pattern to be transferred, can reduce the deformation quantity that shifts pattern coboundary or corner, and improve process margin.
The method of correcting optical adjacency effect of the present invention can be used to revise the light shield design of making metal interconnecting.Because can revising this main pattern, the present invention make the tail end length after its exposure approach original design, the incomplete contact that causes owing to misalignment in the time of can avoiding making metal interconnecting or open circuit.Because aftermost breadth slightly is expansion, has increased the process margin (Process Window) of metal interconnecting.
For above-mentioned and other purposes of the present invention, feature and advantage can be become apparent, a preferred embodiment cited below particularly, and conjunction with figs. are described in detail below.Wherein,
Figure 1A to Figure 1B shows the traditional corner serif of adding in the prior art to carry out the optical proximity effect correction;
Fig. 2 A to Fig. 2 B shows according to a preferred embodiment of the present invention, adds corner of the present invention serif to carry out the optical proximity effect correction;
Fig. 3 A to Fig. 3 B shows another preferred embodiment according to the present invention, adds corner of the present invention serif to carry out the optical proximity effect correction.
Graphic description of symbols:
100,200,300: main pattern
100a, 200a, 300a: vertical bar shape figure
100b, 200b, 300b, 300c, 300d: horizontal stripe shape figure
110,210,310a, 310b: corner serif
111,211,311: the length of corner serif
112,212,312: the width of corner serif
113,213,313: the corner serif is superimposed to the length on the corner
114,214,314: the corner serif is superimposed to the width on the corner
Generally speaking, the employed instrument of lithography step comprises a gauze (Reticle), that is so-called light shield, has a pattern on the gauze, corresponding figure on an integrated circuit one deck.Usually, gauze comprises a glass plate, and by a defined light non-transmittable layers, for example, the chromium layer covers.When exposing, gauze is positioned between wafer and the light source, and when light source is incident to gauze, light will pass through the glassy layer that is not covered by light non-transmittable layers, is projected to the photoresist layer on the wafer.So, the pattern on the gauze just is transferred on the photoresist layer.
As previously discussed, during owing to exposure, the light that sees through light shield produces refraction effect or interference, adds other factors in the manufacturing process, and the pattern of transfer has just produced deformation.For the pattern that makes transfer can be true to nature, reduce its deformation, the invention provides a kind of bearing calibration of optical proximity, utilize improved method and ratio to add corner serif or hammerhead shape pattern, electrically go up best fidelity (Fidelity) in the hope of making metal interconnecting.
Please refer to Fig. 2 A, a layout patterns (Layout Pattern) is provided, that is a main pattern 200 (shown in the dotted line) to be transferred, comprise a horizontal stripe shape figure 200a and a vertical bar shape figure 200b (having only the part of demonstration among the figure).Then, the corner of main pattern 200 is added some corner serives, for example, add a corner serif 210 separately at the horizontal stripe shape figure 200a of main pattern 200 and the corner of vertical bar shape figure 200b.Wherein the minimum of main pattern 200 transfer width (minimum feature width) is decided to be W.For example: in the technology of 0.15 μ m, its minimum transfer width is 0.18 μ m: and in the technology of 0.13 μ m, its minimum transfer width is 0.16um.
Please refer to Fig. 2 B, be the partial enlarged drawing of this vertical bar shape figure 200b, wherein described the size and the position of the corner serif 210 that is added among the present invention.For example: minimum transfer width is W, and length 211 about 0.8W-1.5W of this corner serif 210, the width 212 of this corner serif 210 are greatly about 0.6W-1.4W, and width 212 is about 0.5-1.0 with ratio (212/211) scope of length 211; And this corner serif 210 is superimposed to each corner of this main pattern 200 with the ratio of length 213 (approximately 0.7W-1.2W) and width 214 (approximately 0.3W-0.7W).This length 213 is about 2/3rds of this corner serif length 211, and this width 214 is about 1/2nd of this corner serif width 212.
When adding corner serif 210 according to the method for this embodiment of the present invention and ratio, even when the critical size of this main pattern and the distance between the pattern narrow down to can produce the problem that tail end shrinks traditionally the time, promptly when the ratio of the width of a figure in this main pattern and the distance between this figure and another figure 0.75 between 1.5 the time, also still can effectively avoid the tail end of this pattern to shrink.For example: if under deep UV exposure light source 248nm, the critical size of this main pattern is 0.18 micron, and the distance of horizontal stripe shape figure 200a and vertical bar shape figure 200b is during less than 0.2 micron, add corner serif 210 and can effectively avoid the tail end of this pattern to shrink, see the difference of dotted line and solid line among Fig. 2 A.Dotted line is represented original main pattern 200 among the figure, and represents the result behind this main pattern exposure shown in the solid line, and the length of this end of pattern shown in the solid line is approached original main design of patterns, but terminal width has and presents slight enlargement phenomenon.
Therefore design of the present invention is proofreaied and correct applicable to the design of the light shield of metal interconnecting, because according to the inventive method correction light shield exposure result, the length of the main end of pattern that can make exposes is approached original main design of patterns, and the width of tail end has and presents slight enlargement phenomenon, when being used for the manufacture process of metal interconnecting, can avoid opening circuit or not exclusively contact, and the phenomenon of utilizing its aftermost breadth to enlarge can improve process margin because of tail end shrinks to cause.
Please refer to Fig. 3 A, a main pattern 300 (shown in the dotted line) to be transferred is provided, has comprised a horizontal stripe shape figure 300a and three compact arranged vertical bar shape figure 300b, 300c, 300d (having only the part of demonstration among the figure), the distance between these vertical bar shape patterns is B.Wherein the minimum of main pattern 300 transfer width (minimum feature width) is ordered and is W.For example: in the technology of 0.15 μ m, its minimum transfer width is 0.18 μ m; And in the technology of 0.13 μ m, its minimum transfer width is 0.16 μ m.Then, according to the density of pattern arrangement, the different corner serif of corner adding to main pattern 300 is connected with each other with the corner serif of avoiding arranging on the closeer figure.For example, four corners and vertical bar shape figure 300b at the horizontal stripe shape figure 300a of main pattern 300, the corner, the outside of 300d adds a corner serif 310a separately, and at vertical bar shape figure 300b, the corner of the inboard corner of 300d and linear figure 300c adds a corner serif 310b separately.The width of this corner serif 310b is slightly narrow, therefore is added in vertical bar shape figure 300b, on the corner of the inboard corner of 300d and vertical bar shape figure 300c, can avoid these corner serives each other by too near or continuous.
Please refer to Fig. 3 B, be the partial enlarged drawing of this vertical bar shape figure 300c, wherein described size and the position of the corner serif 310b that is added among the present invention.For example: minimum transfer width is W, length 311 about 0.8W-1.5W of this corner serif 310b, the width 312 of this corner serif 310b is decided on the comparison of W and B, but keeps B to be 1.0W at least, and ratio (212/211) scope of width 312 and length 311 is about 0.2-0.5; And this corner serif 310b is superimposed to the pattern corner with the ratio of length 313 (approximately 0.7W-1.2W) and width 314 (approximately 0.3W-0.7W).This length 313 is about 2/3rds of this corner serif length 311, and then this width 314 is about 2/3rds of this corner serif width 312.
And the size of the corner serif 310a that is added among this embodiment of the present invention and position are according to the corner serif 210 shown in Fig. 2 B.
Refer again to Fig. 3 A,, during 310b, can effectively avoid the tail end of this pattern to shrink, see the difference of dotted line and solid line among the figure when adding corner serif 310a according to method of the present invention and ratio.Dotted line is represented original main pattern 300 among the figure, and represent result behind this main pattern exposure shown in the wide line, horizontal stripe shape figure 300a and vertical bar shape figure 300b in this pattern shown in the solid line, the length of 300d end is approached original main design of patterns, but terminal width has and presents slight enlargement phenomenon, and the tail end shrinkage phenomenon of vertical bar shape figure 300c also has improvement.
Only lifting the corner serif among the present invention is example, but in actual applications, those skilled in the art, without departing from the spirit and scope of the present invention, can same or analogous mode and ratio use hammerhead shape pattern or other similar auxiliary patterns in the present invention.
By above-mentioned preferred embodiment as can be known, the present invention proposes a kind of method of correcting optical adjacency effect, density between the according pattern adds different corner serives in the corner on main pattern to be transferred, or adding tup shape structure, can reduce and shift on the pattern deformation quantity in edge or corner.In being used in the making of metal connecting line, not only can avoid because of misalignment causes contact not exclusively or open circuit, and can improve process margin.
Though the present invention is illustrated with a preferred embodiment, so it is not in order to limit the present invention.Those skilled in the art can make various variants and modifications without departing from the spirit and scope of the present invention, so protection scope of the present invention is as the criterion when looking the scope that accompanying Claim defines.
Claims (12)
1. the method for a correcting optical adjacency effect, this method comprises:
One layout patterns is provided, and this layout patterns has one minimum to shift width, and this layout patterns comprises a plurality of figures, and each figure has a plurality of corners;
Respectively be superimposed with one first auxiliary patterns on a plurality of corners of figures a plurality of described in the described layout patterns, wherein this first auxiliary patterns is superimposed upon on this corner with the length between the width and 1/2nd to 3/4ths between 1/4th to 1/2nd; And
Check the distance between the main pattern that has added described first auxiliary patterns, when first auxiliary patterns on the described pattern is connected with each other, replace first auxiliary patterns with second auxiliary patterns.
2. the method for correcting optical adjacency effect according to claim 1, wherein said first auxiliary patterns comprises a plurality of first corner serives.
3. as the method for correcting optical adjacency effect as described in the claim 2, the ratio of the wide and length of the wherein said first corner serif is between 0.5 to 1.0.
4. as the method for correcting optical adjacency effect as described in the claim 2, wherein when the minimum of described layout patterns shifted width and is W, the width of the described first corner serif was between 0.6W to 1.4W.
5. as the method for correcting optical adjacency effect as described in the claim 2, wherein when the minimum of described layout patterns shifted width and is W, the length of the described first corner serif was between 0.8W to 1.5W.
6. the method for correcting optical adjacency effect according to claim 1, wherein said second auxiliary patterns comprises a plurality of second corner serives.
7. as the method for correcting optical adjacency effect as described in the claim 6, the wide and long ratio of the wherein said second corner serif is between 0.2 to 0.5.
8. as the method for correcting optical adjacency effect as described in the claim 6, wherein when the minimum transfer width of described layout patterns is W, the width of the described second corner serif is determined according to the distance of described figure and another figure, makes the distance of described figure and another figure be about 1.0W.
9. as the method for correcting optical adjacency effect as described in the claim 6, wherein when the minimum of described layout patterns shifted width and is W, the length of the described second corner serif was between 0.8W to 1.5W.
10. as the method for correcting optical adjacency effect as described in the claim 6, the wherein said second corner serif is superimposed upon on the described corner of described layout patterns with the length between the width and 1/2nd to 3/4ths between 1/2nd to 3/4ths.
11. the method for correcting optical adjacency effect according to claim 1, wherein said first auxiliary patterns comprises a plurality of first tup shape patterns.
12. the method for correcting optical adjacency effect according to claim 1, wherein said second auxiliary patterns comprises a plurality of second tup shape patterns.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB001374184A CN1171126C (en) | 2000-12-27 | 2000-12-27 | Optical proximity effect correcting method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB001374184A CN1171126C (en) | 2000-12-27 | 2000-12-27 | Optical proximity effect correcting method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1361450A true CN1361450A (en) | 2002-07-31 |
| CN1171126C CN1171126C (en) | 2004-10-13 |
Family
ID=4597734
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB001374184A Expired - Lifetime CN1171126C (en) | 2000-12-27 | 2000-12-27 | Optical proximity effect correcting method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1171126C (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100423011C (en) * | 2003-04-14 | 2008-10-01 | 达酷美科技公司 | Effective proximity effect correction methodology |
| CN102931204A (en) * | 2006-01-12 | 2013-02-13 | 台湾积体电路制造股份有限公司 | Forming method of image detector array |
| CN103091970A (en) * | 2011-11-07 | 2013-05-08 | 上海华虹Nec电子有限公司 | Optical proximity correction method applied to square-hole pattern |
| CN106257330A (en) * | 2015-06-18 | 2016-12-28 | 中芯国际集成电路制造(上海)有限公司 | The method repaired for optical proximity correction |
| CN109917615A (en) * | 2017-12-12 | 2019-06-21 | 联华电子股份有限公司 | The method for generating photomask using optical proximity effect correction model |
| CN112631068A (en) * | 2020-12-25 | 2021-04-09 | 上海华力集成电路制造有限公司 | Method for correcting layout Dense-3Bar-Dense structure |
| WO2022110902A1 (en) * | 2020-11-30 | 2022-06-02 | 无锡华润上华科技有限公司 | Optical proximity correction method, mask, and readable storage medium |
-
2000
- 2000-12-27 CN CNB001374184A patent/CN1171126C/en not_active Expired - Lifetime
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100423011C (en) * | 2003-04-14 | 2008-10-01 | 达酷美科技公司 | Effective proximity effect correction methodology |
| CN102931204A (en) * | 2006-01-12 | 2013-02-13 | 台湾积体电路制造股份有限公司 | Forming method of image detector array |
| CN102931204B (en) * | 2006-01-12 | 2016-02-03 | 台湾积体电路制造股份有限公司 | The formation method of image detector array |
| CN103091970A (en) * | 2011-11-07 | 2013-05-08 | 上海华虹Nec电子有限公司 | Optical proximity correction method applied to square-hole pattern |
| CN106257330A (en) * | 2015-06-18 | 2016-12-28 | 中芯国际集成电路制造(上海)有限公司 | The method repaired for optical proximity correction |
| CN109917615A (en) * | 2017-12-12 | 2019-06-21 | 联华电子股份有限公司 | The method for generating photomask using optical proximity effect correction model |
| WO2022110902A1 (en) * | 2020-11-30 | 2022-06-02 | 无锡华润上华科技有限公司 | Optical proximity correction method, mask, and readable storage medium |
| CN112631068A (en) * | 2020-12-25 | 2021-04-09 | 上海华力集成电路制造有限公司 | Method for correcting layout Dense-3Bar-Dense structure |
| CN112631068B (en) * | 2020-12-25 | 2024-01-09 | 上海华力集成电路制造有限公司 | Correction method of layout Dense-3Bar-Dense structure |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1171126C (en) | 2004-10-13 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR100283408B1 (en) | Mask for semiconductor device | |
| US6749972B2 (en) | Optical proximity correction common process window maximization over varying feature pitch | |
| JP3751051B2 (en) | I-line stepper lithography for phase shift mask patterning | |
| KR100786422B1 (en) | Pattern layout of integrated circuit, photomask, manufacturing method of semiconductor device, and data producing method | |
| US6426269B1 (en) | Dummy feature reduction using optical proximity effect correction | |
| US7296245B2 (en) | Combined e-beam and optical exposure semiconductor lithography | |
| US6482559B2 (en) | Method of optical proximity correction | |
| JP2000112114A (en) | Semiconductor device and production of semiconductor device | |
| US6226781B1 (en) | Modifying a design layer of an integrated circuit using overlying and underlying design layers | |
| US7910266B2 (en) | Pattern forming method and mask | |
| CN1171126C (en) | Optical proximity effect correcting method | |
| JP5220317B2 (en) | Manufacturing method of semiconductor device | |
| US6165693A (en) | Method of designing an assist feature | |
| US6598218B2 (en) | Optical proximity correction method | |
| CN1963666B (en) | Method and system for converting integrated circuit design into a plurality of masks | |
| CN1242452C (en) | Image forming method, exposure mask for forming image and its making process | |
| US10983429B1 (en) | Retargeting method for optical proximity correction | |
| US8092958B2 (en) | Mask and method for patterning a semiconductor wafer | |
| JP4102734B2 (en) | Manufacturing method of semiconductor device | |
| JP3119202B2 (en) | Automatic mask pattern generation method and mask | |
| CN100345253C (en) | Optic micro distance correcting method | |
| US20080141212A1 (en) | Semiconductor mask and method of making same | |
| CN1423170A (en) | Pattern transfer method | |
| JP3353124B2 (en) | Phase shift photomask | |
| JP3201026B2 (en) | Method for manufacturing solid state device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C06 | Publication | ||
| PB01 | Publication | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CX01 | Expiry of patent term |
Granted publication date: 20041013 |
|
| CX01 | Expiry of patent term |