CN109188870B - Optical proximity correction method - Google Patents
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- CN109188870B CN109188870B CN201811154411.0A CN201811154411A CN109188870B CN 109188870 B CN109188870 B CN 109188870B CN 201811154411 A CN201811154411 A CN 201811154411A CN 109188870 B CN109188870 B CN 109188870B
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
- G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
- G03F7/70441—Optical proximity correction [OPC]
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
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Abstract
The invention provides an optical proximity correction method for optimizing hot spot pattern process windows around an integrated circuit power line, which comprises the steps of obtaining a sub-resolution auxiliary pattern rule of an optical proximity correction target layer; calculating a first target width W1 and a second target width W2, selecting a target power line to which a sub-resolution auxiliary graph needs to be added, expanding the target power line according to a first preset rule, adding the sub-resolution auxiliary graph to the target power line which accords with a second preset rule, generating an optical proximity correction target layer for the target power line formed in the fifth step, correcting the added sub-resolution auxiliary graph according to a third preset rule, adding the optical proximity correction sub-resolution auxiliary graph based on the optical proximity correction target layer and the corrected sub-resolution auxiliary graph, and performing subsequent optical proximity correction.
Description
Technical Field
The present invention relates to the field of integrated circuits, and more particularly, to an Optical Proximity Correction (OPC) method for optimizing a Critical Dimension (CD) of a hot spot pattern process window around a power line (power line) of an integrated circuit.
Background
With the development of semiconductor technology, the critical dimension of devices is smaller and smaller, and when the process node reaches 28 nm or below, a method of splitting a layer of layout into multiple layers and performing multiple exposures by a photoetching process is generally adopted to solve the limitation that the wavelength of a light source of a DUV photoetching machine reaches the limit. The critical dimension is smaller and smaller, the OPC correction of the layout without multi-layer splitting is difficult, the line width and the space in the layout are limit values which can be born by a machine, and the OPC difficulty is very great.
Sub-resolution assist features (SRAFs) have been widely used for Optical Proximity Correction (OPC) of 40nm and below. In general, optical proximity correction adds sub-resolution assist features (SRAFs) according to a target layer. The sub-resolution auxiliary pattern (SRAF) width, the sub-resolution auxiliary pattern (SRAF) length, the distance from the sub-resolution auxiliary pattern (SRAF) to the target layer, and the distance between the sub-resolution auxiliary patterns (SRAFs) are all strictly defined. If the target layer is irregular and discontinuous (target layer jog), continuous sub-resolution assist feature (SRAF) may not be added; if the target layer (targetlayer) is not sufficiently distant from the sub-resolution assist feature (SRAF), the sub-resolution assist feature (SRAF) may not be added at all. The case where the sub-resolution auxiliary pattern (SRAF) is discontinuous or even cannot be added near the power line (power line) is particularly prominent. Therefore, the number of hot spot patterns around the power line (power line) is significantly greater than that in other areas, resulting in an error in the optical proximity correction result.
Disclosure of Invention
The invention provides an Optical Proximity Correction (OPC) method capable of optimizing hot spot pattern process window CD (critical dimension) around a power line.
To solve the above technical problem, the present invention provides an optical proximity correction method for optimizing hot spot pattern process windows around power lines of an integrated circuit, comprising the following steps:
the method comprises the steps of firstly, acquiring a sub-resolution auxiliary graph rule of the optical adjacent correction target layer;
a second step of calculating a first target width W1 and a second target width W2 according to the sub-resolution auxiliary graphic rule; the first target width W1 is a minimum width to which one sub-resolution auxiliary pattern target power line can be added, and the second target width W2 is a minimum width to which two sub-resolution auxiliary pattern target power lines can be added;
thirdly, selecting a target power line to which a sub-resolution auxiliary graph needs to be added;
fourthly, expanding the target power line according to a first preset rule;
fifthly, adding a sub-resolution auxiliary graph to a target power line which accords with a second preset rule according to the sub-resolution auxiliary graph rule;
sixthly, generating an optical adjacent correction target layer for the target power line formed in the fifth step;
step seven, correcting the added sub-resolution auxiliary graph according to a third preset rule;
and an eighth step of adding the optical proximity correction sub-resolution auxiliary pattern based on the optical proximity correction target layer generated in the sixth step and the sub-resolution auxiliary pattern corrected in the seventh step, and performing subsequent optical proximity correction.
Further improving the optical proximity correction method, in the first step, the sub-resolution auxiliary graph rule of the known optical proximity correction level includes:
the minimum width sw of the sub-resolution auxiliary pattern, the minimum distance sm from the sub-resolution auxiliary pattern to the target power line target, the minimum distance ss from the sub-resolution auxiliary pattern to the sub-resolution auxiliary pattern, and the minimum length sl of the sub-resolution auxiliary pattern.
The optical proximity correction method is further improved, the first target width W1 is sw +2 × sm, and the second target width W2 is 2 × sw +2 × sm + ss.
The optical proximity correction method is further improved, and when the third step is implemented, the power line with the initial width belonging to the first width interval or the second width interval is selected as the target power line.
In a further improvement of the method for optical proximity correction, the first width interval is [0.8 × W1,1.2 × W1], and the second width interval is [0.8 × W2,1.2 × W2 ].
Further improving the optical proximity correction method, the first preset rule comprises: if the width of the target power line belongs to the third width interval, judging the space of the target power line; and if the space on both sides of the target power line is more than two times of the minimum design rule, increasing the first distance on both sides of the target power line, and if the space on only one side of the target power line is more than two times of the minimum design rule, increasing the second distance on the larger side of the target power line.
Further improving the optical proximity correction method, the third width interval is [0.8 × W1, W1), the first distance is 0.1 × W1, and the second distance is 0.2 × W1.
The optical proximity correction method is further improved, and the second preset rule is to add sub-resolution auxiliary patterns to the target power line with the increased width belonging to the fourth width interval.
Further improving the optical proximity correction method, the fourth width interval is [ W1,1.2 × W1 ].
The optical proximity correction method is further improved, and a sub-resolution auxiliary graph is added to the interval with the width belonging to the fourth width.
Further improving the optical proximity correction method, the first preset rule comprises: if the target power line width belongs to the fifth width interval, judging the target power line space; if the space on both sides of the target power line is more than twice of the minimum design rule, increasing a third distance on both sides of the target power line; if the space on the target power line side is more than twice the minimum design rule, the larger side of the target power line space is increased by a fourth distance.
Further improving the optical proximity correction method, the fifth width interval is [0.8 × W2, W2), the third distance is 0.1 × W2, and the fourth distance is 0.2 × W2.
The optical proximity correction method is further improved, and the second preset rule is to add sub-resolution auxiliary graphics to the target power line with the increased width belonging to the sixth width interval.
Further improving the optical proximity correction method, the sixth width interval is [ W2,1.2 × W2 ].
The optical proximity correction method is further improved, and two sub-resolution auxiliary graphs are added to the interval with the width belonging to the sixth width.
Further improving the optical proximity correction method, the third preset rule comprises:
if the distance from the added sub-resolution auxiliary graph to the target power line is smaller than the minimum distance sm from the sub-resolution auxiliary graph to the target power line, removing part of the sub-resolution auxiliary graph violating the sub-resolution auxiliary graph rule; and if the length of the sub-resolution auxiliary graph after the removal is smaller than the shortest length sl of the sub-resolution auxiliary graph, removing the added sub-resolution auxiliary graph completely.
The method comprises the steps of firstly obtaining a sub-resolution auxiliary graph rule of the optical proximity correction target layer, then adding a sub-resolution auxiliary graph to a target power line according to a preset rule, and then generating the optical proximity correction method target layer. By the technical means of the invention, continuous and more sub-resolution auxiliary patterns can be obtained at the target power line, thereby greatly improving the accuracy of the key size of the hot spot pattern process window near the target power line.
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The invention will be described in further detail with reference to the following detailed description and accompanying drawings:
FIG. 1 is a schematic diagram of the sub-resolution auxiliary pattern rule of the optical proximity correction target layer.
Fig. 2 is a schematic diagram illustrating that the width of the target power line belongs to the third width section.
FIG. 3 is a schematic diagram illustrating modification of an added sub-resolution auxiliary pattern according to a third predetermined rule.
FIG. 4 is a schematic diagram of CD variation under the condition of using the conventional optical proximity correction PW according to the first embodiment of the present invention.
FIG. 5 is a schematic diagram illustrating CD variation under the condition of the first embodiment of the present invention adopting the optical proximity correction PW of the present invention.
FIG. 6 is a schematic diagram of CD variation under the condition of using the conventional optical proximity correction PW according to the second embodiment of the present invention.
FIG. 7 is a schematic diagram illustrating CD variation under the condition of using the optical proximity correction PW of the present invention in a third embodiment of the present invention.
Detailed Description
The invention provides an optical proximity correction method for optimizing hot spot pattern process windows around an integrated circuit power line, which comprises the following steps:
a first step of acquiring a sub-resolution auxiliary pattern rule of the optical proximity correction target layer as shown in fig. 1;
the sub-resolution auxiliary graph rule of the known optical proximity correction level comprises: the minimum width sw of the sub-resolution auxiliary pattern, the minimum distance sm from the sub-resolution auxiliary pattern to the target power line, the minimum distance ss from the sub-resolution auxiliary pattern to the sub-resolution auxiliary pattern, and the minimum length sl of the sub-resolution auxiliary pattern.
A second step of calculating a first target width W1 and a second target width W2 according to the sub-resolution auxiliary graphic rule; the first target width W1 is a minimum width to which one sub-resolution auxiliary pattern target power line can be added, and the second target width W2 is a minimum width to which two sub-resolution auxiliary pattern target power lines can be added;
the first target width W1 is sw +2 × sm, and the second target width W2 is 2 × sw +2 × sm + ss.
Thirdly, selecting a target power line to which a sub-resolution auxiliary graph needs to be added; and selecting the power line with the initial width belonging to the first width section or the second width section as a target power line. The first width interval is [ 0.8W 1, 1.2W 1], and the second width interval is [ 0.8W 2, 1.2W 2 ].
Fourthly, as shown in fig. 2, expanding the target power line according to a first preset rule;
and if the space on both sides of the target power line is more than two times of the minimum design rule, increasing the first distance on both sides of the target power line, and if the space on only one side of the target power line is more than two times of the minimum design rule, increasing the second distance on the larger side of the target power line, wherein the third width interval is [0.8 × W1, W1], the first distance is 0.1 × W1, and the second distance is 0.2 × W1.
If the target power line width belongs to the fifth width interval, judging the target power line space; if the space on both sides of the target power line is more than twice of the minimum design rule, increasing a third distance on both sides of the target power line; if the space on the target power line side is more than twice the minimum design rule, the larger side of the target power line space is increased by a fourth distance.
The fifth width interval is [0.8 × W2, W2), the third distance is 0.1 × W2, and the fourth distance is 0.2 × W2.
Fifthly, adding a sub-resolution auxiliary graph to a target power line which accords with a second preset rule according to the sub-resolution auxiliary graph rule;
the second preset rule comprises:
and adding a sub-resolution auxiliary pattern to the target power line with the increased width belonging to a fourth width interval, wherein the fourth width interval is [ W1, 1.2W 1 ].
Two sub-resolution auxiliary patterns are added to the target power line whose increased width belongs to a sixth width section [ W2, 1.2W 2 ].
Sixthly, generating an optical adjacent correction target layer for the target power line formed in the fifth step;
seventhly, as shown in fig. 3, correcting the added sub-resolution auxiliary graph according to a third preset rule;
the third preset rule comprises: if the distance from the added sub-resolution auxiliary graph to the target power line is smaller than the minimum distance sm from the sub-resolution auxiliary graph to the target power line, removing part of the sub-resolution auxiliary graph violating the sub-resolution auxiliary graph rule; and if the length of the sub-resolution auxiliary graph after the removal is smaller than the shortest length sl of the sub-resolution auxiliary graph, removing the added sub-resolution auxiliary graph completely.
And an eighth step of adding the optical proximity correction sub-resolution auxiliary pattern based on the optical proximity correction target layer generated in the sixth step and the sub-resolution auxiliary pattern corrected in the seventh step, and performing subsequent optical proximity correction.
In the present invention, the effect achieved by the SRAF with priority is evaluated by the variation of CD under different pw (process) conditions based on the conventional OPC correction result and the OPC correction result by SRAF with priority. The smaller the CD variation, the larger the process window for the pattern.
Wherein, the PW condition comprises: dose + 4% focus +40nm, dose + 4% focus-40nm, dose-4% focus +40nm, dose-4% focus-40nm, global mask bias +0.5nm and global mask bias-0.5nm, for 6 conditions. And simulating the CD variation under the condition of 6 PWs by using an OPC model according to the conventional OPC correction result and the OPC correction result of preferentially adding the SRAF.
The CD variation under the PW condition of the conventional OPC correction result in the first embodiment is 9nm, the CD variation under the PW condition of the OPC correction result in which the SRAF is preferentially added is 5.1nm, and the CD variation is reduced by 43.3%, as shown in FIG. 4 and FIG. 5.
The CD variation under the PW condition of the conventional OPC correction result in the second embodiment is 7.7nm, the CD variation under the PW condition of the OPC correction result in which the SRAF is preferentially added is 5.5nm, and the CD variation is reduced by 28.6%, as shown in FIG. 6 and FIG. 7.
The present invention has been described in detail with reference to the specific embodiments and examples, but these are not intended to limit the present invention. Many variations and modifications may be made by one of ordinary skill in the art without departing from the principles of the present invention, which should also be considered as within the scope of the present invention.
Claims (12)
1. An optical proximity correction method for optimizing hot spot pattern process windows around power lines of an integrated circuit, comprising the steps of:
the first step, acquiring the sub-resolution auxiliary graph rule of the known optical adjacent correction target layer, comprising: the minimum width sw of the sub-resolution auxiliary graph, the minimum distance sm from the sub-resolution auxiliary graph to a target power line, the minimum distance ss from the sub-resolution auxiliary graph to the sub-resolution auxiliary graph and the shortest length sl of the sub-resolution auxiliary graph are obtained;
a second step of calculating a first target width W1 and a second target width W2 according to the sub-resolution auxiliary graphic rule; the first target width W1 is a minimum width to which one sub-resolution auxiliary pattern target power line can be added, and the second target width W2 is a minimum width to which two sub-resolution auxiliary pattern target power lines can be added;
thirdly, selecting a target power line to which a sub-resolution auxiliary graph needs to be added;
fourthly, expanding the target power line according to a first preset rule; the first preset rule comprises that if the width of the target power line belongs to the third width interval, the target power line space is judged; if the space on both sides of the target power line is more than two times of the minimum design rule, the first distance is increased on both sides of the target power line, and if the space on only one side of the target power line is more than two times of the minimum design rule, the second distance is increased on the larger side of the target power line;
fifthly, adding a sub-resolution auxiliary graph to a target power line which accords with a second preset rule according to the sub-resolution auxiliary graph rule; the second preset rule is that the sub-resolution auxiliary graph is added to the target power line with the increased width belonging to the fourth width interval;
sixthly, generating an optical adjacent correction target layer for the target power line formed in the fifth step;
step seven, correcting the added sub-resolution auxiliary graph according to a third preset rule; the third preset rule comprises: if the distance from the added sub-resolution auxiliary graph to the target power line is smaller than the minimum distance sm from the sub-resolution auxiliary graph to the target power line, removing part of the sub-resolution auxiliary graph violating the sub-resolution auxiliary graph rule; if the length of the removed sub-resolution auxiliary graph is smaller than the shortest length sl of the sub-resolution auxiliary graph, removing the added sub-resolution auxiliary graph completely;
and an eighth step of adding the optical proximity correction sub-resolution auxiliary pattern based on the optical proximity correction target layer generated in the sixth step and the sub-resolution auxiliary pattern corrected in the seventh step, and performing subsequent optical proximity correction.
2. The method for correcting optical proximity according to claim 1, wherein the first target width W1 is sw +2 × sm, and the second target width W2 is 2 × sw +2 × sm + ss.
3. The optical proximity correction method of claim 2, wherein the third step is performed by selecting a power line having an initial width belonging to the first width section or the second width section as the target power line.
4. The method of optical proximity correction according to claim 3, wherein: the first width interval is [ 0.8W 1, 1.2W 1], and the second width interval is [ 0.8W 2, 1.2W 2 ].
5. The method of claim 1, wherein the third width interval is [0.8 × W1, W1], the first distance is 0.1 × W1, and the second distance is 0.2 × W1.
6. The method of optical proximity correction according to claim 1, wherein: the fourth width interval is [ W1,1.2 × W1 ].
7. The method of optical proximity correction according to claim 6, wherein: and adding a sub-resolution auxiliary graph to the interval with the width belonging to the fourth width.
8. The method for optical proximity correction according to claim 4, wherein the first predetermined rule comprises:
if the target power line width belongs to the fifth width interval, judging the target power line space; if the space on both sides of the target power line is more than twice of the minimum design rule, increasing a third distance on both sides of the target power line; if the space on the target power line side is more than twice the minimum design rule, the larger side of the target power line space is increased by a fourth distance.
9. The method of claim 8, wherein the fifth width interval is [0.8 × W2, W2], the third distance is 0.1 × W2, and the fourth distance is 0.2 × W2.
10. The method of optical proximity correction according to claim 9, wherein: and the second preset rule is that the sub-resolution auxiliary graph is added to the target power line with the increased width belonging to the sixth width interval.
11. The method of optical proximity correction according to claim 10, wherein: the sixth width interval is [ W2,1.2 × W2 ].
12. The method of optical proximity correction according to claim 11, wherein: and adding two sub-resolution auxiliary graphs to the interval with the width belonging to the sixth width.
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| CN110187600B (en) * | 2019-06-03 | 2022-10-25 | 中国科学院微电子研究所 | Method for adding SRAF (sequence related analysis) according to rules |
| CN112241102A (en) * | 2019-07-19 | 2021-01-19 | 中芯国际集成电路制造(上海)有限公司 | Optical proximity correction, photomask manufacturing and imaging method |
| CN112612181B (en) * | 2020-12-08 | 2022-09-20 | 华虹半导体(无锡)有限公司 | OPC method for specific pattern side wave effect and through hole layer OPC processing method |
| CN115877650B (en) * | 2023-01-30 | 2023-05-30 | 合肥新晶集成电路有限公司 | Method for adding scattering bars and method for preparing mask |
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| CN104898367A (en) * | 2015-05-15 | 2015-09-09 | 上海集成电路研发中心有限公司 | Optical proximity correction method for improving through-hole process window |
| CN105652586B (en) * | 2016-04-07 | 2019-10-25 | 上海华力微电子有限公司 | The method for reducing substrate reflections affect using exposure secondary graphics |
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