CN112626582A - Method for improving uniformity of electroplated metal film - Google Patents
Method for improving uniformity of electroplated metal film Download PDFInfo
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- CN112626582A CN112626582A CN202011284623.8A CN202011284623A CN112626582A CN 112626582 A CN112626582 A CN 112626582A CN 202011284623 A CN202011284623 A CN 202011284623A CN 112626582 A CN112626582 A CN 112626582A
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- electroplating
- rubber ring
- wafer
- metal film
- uniformity
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
- C25D7/12—Semiconductors
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D21/00—Processes for servicing or operating cells for electrolytic coating
- C25D21/10—Agitating of electrolytes; Moving of racks
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/02—Electroplating of selected surface areas
- C25D5/028—Electroplating of selected surface areas one side electroplating, e.g. substrate conveyed in a bath with inhibited background plating
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- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
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- Organic Chemistry (AREA)
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Abstract
The invention relates to the technical field of semiconductors, and discloses a method for improving uniformity of an electroplated metal film, which comprises the following steps of S1, placing a wafer in a fixed electroplating cavity with the front surface facing downwards; s2, arranging a layer of rubber ring between the two magnetic poles in the electroplating cavity, wherein the rubber ring is arranged right below the wafer, and the size of the rubber ring is smaller than that of the wafer; s3, arranging two stirring devices between the two magnetic poles in the electroplating cavity, wherein the stirring devices are arranged below the rubber ring; and S4, starting the magnetic pump, starting the stirring device, and drawing the electroplating metal liquid into the electroplating cavity through the pipeline for electroplating. The invention can improve the uniformity of the metal film in the metal film process.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a method for improving uniformity of an electroplated metal film.
Background
A metal film process is a common process in the semiconductor industry, wherein a layer of 400A TiW is sputtered and plated on the surface of a wafer through a sputtering machine, the TiW provides a seed layer for an electroplating process to improve the adhesion, and then a P electrode with the thickness of 3um is manufactured through the electroplating machine. At present, when in electroplating, a wafer is firstly placed on a fixed cavity with the front surface facing downwards, the back surface is pressed by a support column and is fixed on the cavity, then electroplating metal liquid is drawn into the electroplating cavity through a pipeline by a magnetic pump, and is diffused from the middle of the cavity to the two sides under the drawing of magnetic fields at the two sides of the cavity, and flows back to the electroplating metal liquid tank through a current limiting device of the cavity.
In the existing electroplating method, because the edge of the cavity is adsorbed by a magnetic field, the middle of the wafer is only coated by the inertia of the electroplating liquid which is upwards blown, so that the metal film after each electroplating is always thick at two sides and thin in the middle, and the uniformity is generally less than 90 percent, but the uniformity is required to reach 95 to 98 percent in the metal film process with higher requirements generally, but the existing electroplating method cannot realize the uniformity.
Patent document CN201810597042.6 discloses a method for improving uniformity of thick gold plating, which comprises fabricating anode baffles around the gold plating bath, fabricating movable anode baffles at the lower end of the gold plating bath, and sealing 50MM edges with PP plates around the gold plating bath to shield the current cusp effect caused by excessive gold ions due to more liquid medicine around the bath; the technology controls the gold plating current to be uniformly distributed through the size of the clamp and the mode of the clamping plate, so that the plate edge of the plate to be plated is greatly ensured to be close to the power distribution in the plate, compared with the prior art, the technology realizes the uniformity improvement of the plating thickness, and improves the gold plating uniformity from 60-70% of the conventional level in the industry to 90-95%, but cannot reach the uniformity of 95-98%.
Disclosure of Invention
In view of the above, the present invention provides a method for improving uniformity of a plated metal film, which can improve uniformity of the metal film in a metal film process.
The invention solves the technical problems by the following technical means:
a method for improving the uniformity of a plated metal film comprises the following steps,
s1, placing the wafer into a fixed electroplating cavity with the front surface facing downwards;
s2, arranging a layer of rubber ring between the two magnetic poles in the electroplating cavity, wherein the rubber ring is arranged right below the wafer, and the size of the rubber ring is smaller than that of the wafer;
s3, arranging two stirring devices between the two magnetic poles in the electroplating cavity, wherein the stirring devices are arranged below the rubber ring;
and S4, starting the magnetic pump, starting the stirring device, and drawing the electroplating metal liquid into the electroplating cavity through the pipeline for electroplating.
Further, the rubber ring is made of fluororubber. Fluororubber has high chemical stability, and after electroplating is used for many times, the surface of the fluororubber can be smooth and has no loss, so that the problems that the rubber ring is corroded due to corrosion of electroplating solution on the rubber ring, the electroplating solution is polluted by corroded small particles and the compactness of a metal film is influenced are solved.
Further, the diameter of the rubber ring is 70% -90% of the wafer size, and the thickness of the rubber ring is 1-2 cm.
Further, the diameter size of the rubber ring is 80% of the size of the wafer, and the thickness of the rubber ring is 1.5 cm. A large number of experiments prove that the electroplating uniformity of the rubber ring with the size is better.
Further, the two stirring devices are symmetrically arranged on two sides of the center line of the rubber ring. Two agitating unit symmetries set up under wafer and rubber circle, and when the stirring, the diffusion of plating solution is more even for the electroplating homogeneity of wafer is better.
Further, the rotating speed of the stirring device is 20-30 revolutions per minute. The plating uniformity of the wafer is better when the rotating speed is 20-30 revolutions per minute.
The invention has the beneficial effects that:
according to the invention, the rubber ring is arranged between the two magnetic poles in the electroplating cavity, the speed of electroplating solution diffusing to two sides under the action of a magnetic field can be limited by the arrangement of the rubber ring, and the electroplating solution is gathered and prolonged in the middle of the wafer; and through setting up two agitating units between two magnetic poles in the electroplating cavity, start the agitating unit while electroplating, the electroplating solution spreads more evenly to both edges of the wafer from the middle of the wafer, through a large amount of tests prove, can make the homogeneity of the metal film of electroplating promote to 95.2% -97.1%, and under the situation that voltage, electric current and magnetic field are invariable, the electroplating speed increases to 25A/s from 20A/s before, the electroplating efficiency is higher.
Drawings
FIG. 1 is a schematic structural diagram of a plating chamber during electroplating according to the present invention.
Wherein, wafer 1, electroplating cavity 2, rubber circle 3, magnetic pole 4, puddler 5, stirring rake 6, magnetic drive pump 7, pipeline 8.
Detailed Description
The invention will be described in detail below with reference to the following drawings:
as shown in fig. 1:
examples 1,
The method for improving the uniformity of the electroplated metal film comprises the following steps,
s1, placing the wafer 1 with the diameter of 150mm with the front side facing downwards into a fixed electroplating cavity 2;
s2, installing a layer of rubber ring 3 made of fluororubber between two magnetic poles 4 in the electroplating cavity 2, wherein the rubber ring 3 is arranged right below the wafer 1, the diameter of the rubber ring 3 is 70% of the size of the wafer 1, namely 105mm, and the thickness of the rubber ring 3 is 1 cm;
s3, arranging two stirring devices between the two magnetic poles 4 in the electroplating cavity 2, wherein the stirring devices are arranged below the rubber ring 3 and symmetrically arranged on two sides of the central line of the rubber ring 3, the stirring devices are common stirring devices and comprise stirring rods 5 and stirring paddles 6, and the stirring rods 5 are driven by external power;
and S4, starting the magnetic pump 7 and the stirring device, wherein the rotation speed of the stirring device is 20 revolutions per minute, and drawing the electroplating metal solution into the electroplating cavity 2 through the pipeline 8 for electroplating.
Examples 2,
The method for improving the uniformity of the electroplated metal film comprises the following steps,
s1, placing the wafer 1 with the diameter of 150mm with the front side facing downwards into a fixed electroplating cavity 2;
s2, installing a layer of rubber ring 3 made of fluororubber between two magnetic poles 4 in the electroplating cavity 2, wherein the rubber ring 3 is arranged right below the wafer 1, the diameter of the rubber ring 3 is 80% of the size of the wafer 1, namely 120mm, and the thickness of the rubber ring 3 is 1.5 cm;
s3, arranging two stirring devices between the two magnetic poles 4 in the electroplating cavity 2, wherein the stirring devices are arranged below the rubber ring 3 and symmetrically arranged on two sides of the central line of the rubber ring 3, the stirring devices are common stirring devices and comprise stirring rods 5 and stirring paddles 6, and the stirring rods 5 are driven by external power;
s4, starting the magnetic pump 7 and the stirring device, wherein the rotation speed of the stirring device is 25 r/min, and drawing the electroplating metal solution into the electroplating cavity 2 through the pipeline 8 for electroplating.
Examples 3,
The method for improving the uniformity of the electroplated metal film comprises the following steps,
s1, placing the wafer 1 with the diameter of 150mm with the front side facing downwards into a fixed electroplating cavity 2;
s2, installing a layer of rubber ring 3 made of fluororubber between two magnetic poles 4 in the electroplating cavity 2, wherein the rubber ring 3 is arranged right below the wafer 1, the diameter of the rubber ring 3 is 90% of the size of the wafer 1, namely 135mm, and the thickness of the rubber ring 3 is 2 cm;
s3, arranging two stirring devices between the two magnetic poles 4 in the electroplating cavity 2, wherein the stirring devices are arranged below the rubber ring 3 and symmetrically arranged on two sides of the central line of the rubber ring 3, the stirring devices are common stirring devices and comprise stirring rods 5 and stirring paddles 6, and the stirring rods 5 are driven by external power;
and S4, starting the magnetic pump 7, starting the stirring device at the rotating speed of 30 revolutions per minute, and drawing the electroplating metal solution into the electroplating cavity 2 through the pipeline 8 for electroplating.
The wafers prepared by electroplating according to the methods of examples 1-3 were tested for uniformity and plating rate, and the final uniformity test data were as follows:
the results of the above embodiments show that the rubber ring is arranged between the two magnetic poles in the electroplating chamber, the arrangement of the rubber ring can limit the diffusion speed of the electroplating solution to the two sides under the action of the magnetic field, and the electroplating solution is gathered and prolonged in the middle of the wafer; and through setting up two agitating units between two magnetic poles in the electroplating cavity, start the agitating unit while electroplating, the electroplating solution spreads more evenly to both edges of the wafer from the middle of the wafer, through a large amount of tests prove, can make the homogeneity of the metal film of electroplating promote to 95.2% -97.1%, and under the situation that voltage, electric current and magnetic field are invariable, the electroplating speed increases to 25A/s from 20A/s before, the electroplating efficiency is higher.
Although the present invention has been described in detail with reference to the preferred embodiments, it will be understood by those skilled in the art that various changes may be made and equivalents may be substituted without departing from the spirit and scope of the invention as defined in the appended claims. The techniques, shapes, and configurations not described in detail in the present invention are all known techniques.
Claims (6)
1. A method for improving the uniformity of an electroplated metal film is characterized by comprising the following steps: comprises the following steps of (a) carrying out,
s1, placing the wafer into a fixed electroplating cavity with the front surface facing downwards;
s2, arranging a layer of rubber ring between the two magnetic poles in the electroplating cavity, wherein the rubber ring is arranged right below the wafer, and the size of the rubber ring is smaller than that of the wafer;
s3, arranging two stirring devices between the two magnetic poles in the electroplating cavity, wherein the stirring devices are arranged below the rubber ring;
and S4, starting the magnetic pump, starting the stirring device, and drawing the electroplating metal liquid into the electroplating cavity through the pipeline for electroplating.
2. The method of claim 1, wherein the step of increasing the uniformity of the electroplated metal film comprises: the rubber ring is made of fluororubber.
3. The method of claim 2, wherein the step of increasing the uniformity of the electroplated metal film comprises: the diameter of the rubber ring is 70% -90% of the wafer size, and the thickness of the rubber ring is 1-2 cm.
4. A method for improving the uniformity of a plated metal film according to claim 3, wherein: the diameter size of the rubber ring is 80% of the size of the wafer, and the thickness of the rubber ring is 1.5 cm.
5. The method for improving the uniformity of a plated metal film according to claim 4, wherein: the two stirring devices are symmetrically arranged on two sides of the center line of the rubber ring.
6. The method of claim 5, wherein the step of increasing the uniformity of the electroplated metal film comprises: the rotating speed of the stirring device is 20-30 revolutions per minute.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202011284623.8A CN112626582B (en) | 2020-11-17 | 2020-11-17 | Method for improving uniformity of electroplated metal film |
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| CN202011284623.8A CN112626582B (en) | 2020-11-17 | 2020-11-17 | Method for improving uniformity of electroplated metal film |
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| CN112626582B CN112626582B (en) | 2022-05-24 |
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Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002241990A (en) * | 2001-02-08 | 2002-08-28 | Semiconductor Leading Edge Technologies Inc | Plating apparatus and method for producing semiconductor device |
| US6451195B1 (en) * | 1999-07-07 | 2002-09-17 | Nec Corporation | System and method for electrolytic plating using a magnetic field |
| US20030079995A1 (en) * | 2000-03-27 | 2003-05-01 | Novellus Systems, Inc. | Dynamically variable field shaping element |
| JP2003306793A (en) * | 2002-04-16 | 2003-10-31 | Ebara Corp | Plating apparatus and plating method |
| CN107034504A (en) * | 2017-03-17 | 2017-08-11 | 日本电镀工程股份有限公司 | The electroplanting device of chip |
| CN108486618A (en) * | 2018-06-11 | 2018-09-04 | 深圳市博敏电子有限公司 | A method of improving thick metal plated uniformity |
| CN208586366U (en) * | 2018-08-09 | 2019-03-08 | 德淮半导体有限公司 | Wafer plating process chamber |
-
2020
- 2020-11-17 CN CN202011284623.8A patent/CN112626582B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6451195B1 (en) * | 1999-07-07 | 2002-09-17 | Nec Corporation | System and method for electrolytic plating using a magnetic field |
| US20030079995A1 (en) * | 2000-03-27 | 2003-05-01 | Novellus Systems, Inc. | Dynamically variable field shaping element |
| JP2002241990A (en) * | 2001-02-08 | 2002-08-28 | Semiconductor Leading Edge Technologies Inc | Plating apparatus and method for producing semiconductor device |
| JP2003306793A (en) * | 2002-04-16 | 2003-10-31 | Ebara Corp | Plating apparatus and plating method |
| CN107034504A (en) * | 2017-03-17 | 2017-08-11 | 日本电镀工程股份有限公司 | The electroplanting device of chip |
| CN108486618A (en) * | 2018-06-11 | 2018-09-04 | 深圳市博敏电子有限公司 | A method of improving thick metal plated uniformity |
| CN208586366U (en) * | 2018-08-09 | 2019-03-08 | 德淮半导体有限公司 | Wafer plating process chamber |
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