CN112615532A - Multi-stage high-current MOSFET (metal-oxide-semiconductor field effect transistor) driving circuit with overcurrent protection function - Google Patents

Multi-stage high-current MOSFET (metal-oxide-semiconductor field effect transistor) driving circuit with overcurrent protection function Download PDF

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Publication number
CN112615532A
CN112615532A CN202011536960.1A CN202011536960A CN112615532A CN 112615532 A CN112615532 A CN 112615532A CN 202011536960 A CN202011536960 A CN 202011536960A CN 112615532 A CN112615532 A CN 112615532A
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port
resistor
mosfet
current
driving chip
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Inventor
王颇
王超
李卢毅
姜哲
杨志达
董海星
张俐
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Yangzhou Shuguang Opto Electronics Automatic Control Co ltd
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Yangzhou Shuguang Opto Electronics Automatic Control Co ltd
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    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
    • H02M1/088—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters for the simultaneous control of series or parallel connected semiconductor devices
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H7/00—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions
    • H02H7/10—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for converters; for rectifiers
    • H02H7/12—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for converters; for rectifiers for static converters or rectifiers
    • H02H7/1203—Circuits independent of the type of conversion

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  • Power Engineering (AREA)
  • Power Conversion In General (AREA)

Abstract

The invention discloses a multistage heavy current MOSFET drive circuit with an overcurrent protection function, which comprises a primary drive circuit, an overcurrent detection circuit, a secondary drive circuit and two MOSFETs arranged in parallel; the primary driving circuit is used for carrying out overcurrent detection, and a port IN of the primary driving circuit receives a PWM signal at a control side; the port CS is connected with an overcurrent detection circuit to perform overcurrent judgment; the port FAULT feeds back an overcurrent signal to the control side and sends out an overcurrent alarm; the overcurrent detection circuit is used for detecting the current flowing through the MOSFET and transmitting current data to the primary drive circuit; the input side of the two-pole drive circuit is connected with the one-level drive circuit, and the output side of the two-pole drive circuit is connected with the grid electrode of the MOSFET and used for driving the MOSFET. The invention has simple peripheral circuit and high integration level, improves the power density of the servo driver and improves the safety of the MOSFET drive circuit.

Description

Multi-stage high-current MOSFET (metal-oxide-semiconductor field effect transistor) driving circuit with overcurrent protection function
Technical Field
The invention relates to the field of low-voltage high-current servo drivers, in particular to a multi-stage high-current MOSFET driving circuit with an overcurrent protection function.
Background
In the field of servo drivers, most of the servo drivers are widely applied to large-sized and high-voltage products, however, in the occasions such as robot joints and military equipment, there is a strong demand for small-sized servo drivers which can be powered by a storage battery with a lower voltage due to the limitation of working conditions and the consideration of safety factors.
Under the condition of the same power operation, the output current of the small low-voltage servo driver is several times or even dozens of times of that of the high-voltage servo driver. To drive a high-current MOSFET, higher requirements are placed on the design of the driving circuit. The driving of a large-current MOSFET requires several times or even tens of times of grid current of a common MOSFET and overcurrent protection. At present, the integration level of a drive IC of a large-current MOSFET is not high, and a mode of constructing an overcurrent protection circuit by using discrete elements at the periphery of the drive circuit is mostly adopted, although the method meets the drive and protection requirements, the design difficulty is increased, the volume of a drive plate is increased, the power density of a servo driver is reduced, and the requirements of special occasions such as robot joints, military equipment and the like on space and weight are more and more difficult to meet.
Disclosure of Invention
The invention aims to provide a multistage high-current MOSFET driving circuit which is small in size, high in power density and capable of achieving an overcurrent protection function.
The technical solution for realizing the purpose of the invention is as follows: a multi-stage high-current MOSFET drive circuit with a current protection function comprises a primary drive circuit, an overcurrent detection circuit, a secondary drive circuit and MOSFETs, wherein the MOSFETs comprise a first high-current MOSFET 1 and a second high-current MOSFET Q2 which are arranged in parallel;
the primary driving circuit is used for carrying out overcurrent detection, and a port IN of the primary driving circuit receives a PWM signal at a control side; the port CS is connected with an overcurrent detection circuit to perform overcurrent judgment; the port FAULT feeds back an overcurrent signal to the control side and sends out an overcurrent alarm;
the over-current detection circuit is used for detecting the current flowing through the MOSFET and transmitting current data to the primary driving circuit;
the input side of the two-pole drive circuit is connected with the first-stage drive circuit, and the output side of the two-pole drive circuit is connected with the grid of the MOSFET and used for driving the MOSFET.
Further, the primary driving circuit includes a first capacitor C1, a fourth capacitor C4, a sixth capacitor C6, a seventh capacitor C7, an eighth resistor R8 and a first driving chip IRS 2127;
the Vcc end of the first driving chip, the first end of the fourth capacitor C4 and the first end of the seventh capacitor C7 are all connected to a power supply Vcc, and the second end of the seventh capacitor C7 is grounded GND; the second end of the fourth capacitor C4 and the port COM of the first driving chip are grounded GND; the first capacitor C1 is connected in series between the port VB and the port VS of the first driving chip, and the port VB of the first driving chip is connected with a power supply Vcc; the sixth capacitor C6 is connected in series between the port CS and the port VS of the first driver chip; the first end of the eighth resistor R8 is connected to the port HO of the first driver chip, the PWM signal of the control side is connected to the port IN of the first driver chip, and the port FAULT of the first driver chip is connected to the FPGA of the control side.
Further, the secondary driving circuit includes a second capacitor C2, a third capacitor C3, a fifth capacitor C5, a first resistor R1, a second resistor R2, a third resistor R3, a fourth resistor R4, a fifth resistor R5, a sixth resistor R6, a second diode D2, and a second driving chip 1EDNI60N12 AF;
a second end of an eighth resistor R8 IN the primary driving circuit is connected to a port IN1 of a second driving chip; after the port IN2 and the port GND of the second driving chip are connected with the port VS of the first driving chip IN the primary driving circuit, the common terminal is connected into the source electrode of the MOSFET; the fifth capacitor C5 is connected in series between the port VCC1 and the port GND1 of the second driving chip, the third capacitor C3 is connected in series between the port GND1 and the port GND2 of the second driving chip, the anode of the second diode D2 is connected to the port GND2 of the second driving chip, and the cathode of the second diode D2 is connected to the port GND1 of the second driving chip; the second capacitor C2 is connected in series between a port VCC2 and a port GND2 of the second driving chip, and a port VCC2 of the second driving chip is connected with a power supply VCC; the port OUT1 of the second driving chip is respectively connected to the first ends of the second resistor R2 and the fourth resistor R4, and the port OUT2 of the second driving chip is respectively connected to the first ends of the first resistor R1 and the third resistor R3; the second ends of the first resistor R1 and the second resistor R2 are connected to the first end of the fifth resistor R5, and the first end of the fifth resistor R5 is connected to the gate of the second high-current MOSFET Q2; the second ends of the third resistor R3 and the fourth resistor R4 are connected to the first end of the sixth resistor R6, and the first end of the sixth resistor R6 is connected to the gate of the first high-current MOSFET Q1.
Further, the overcurrent detection circuit includes a seventh resistor R7, a ninth resistor R9, and a first diode D1;
the B point of the CS port of the primary driving circuit is connected with first ends of a seventh resistor R7 and a ninth resistor R9, the second end of the ninth resistor R9 is connected with the anode of a first diode D1, and the cathode of the first diode D1 is connected with the drains of a first large-current MOSFET Q1 and a second large-current MOSFET Q2;
when the first large-current mosfet q1 or the second large-current mosfet q2 is short-circuited, the voltage at the point B of the port CS of the first driving chip in the first-stage driving circuit is increased, the port CS judges whether an overcurrent phenomenon occurs through the internal comparison circuit, and if the overcurrent phenomenon occurs, the overcurrent information is fed back to the control side through the port FAULT of the first driving chip, and an overcurrent alarm is given.
Further, the maximum gate driving current of the diode driving circuit is 10A, and is used for turning on and off the first large-current mosfet q1 and the second large-current mosfet q 2.
Compared with the prior art, the invention has the remarkable advantages that: (1) the high-current drive and overcurrent protection functions are integrated together by utilizing a two-stage drive mode, a peripheral circuit is simple, the integration level is high, the volume of a drive circuit is reduced, and the power density of a servo driver is improved; (2) the over-current protection function is achieved, and the safety of the MOSFET driving circuit is improved.
Drawings
Fig. 1 is a block diagram of a multi-stage high-current MOSFET driving circuit with overcurrent protection according to the present invention.
Fig. 2 is a schematic diagram of the circuit structure of the present invention.
Detailed Description
The invention relates to a multistage high-current MOSFET drive circuit with a current protection function, which comprises a primary drive circuit, an overcurrent detection circuit, a secondary drive circuit and an MOSFET, wherein the MOSFET comprises a first high-current MOSFET 1 and a second high-current MOSFET Q2 which are arranged in parallel;
the primary driving circuit is used for carrying out overcurrent detection, and a port IN of the primary driving circuit receives a PWM signal at a control side; the port CS is connected with an overcurrent detection circuit to perform overcurrent judgment; the port FAULT feeds back an overcurrent signal to the control side and sends out an overcurrent alarm;
the over-current detection circuit is used for detecting the current flowing through the MOSFET and transmitting current data to the primary driving circuit;
the input side of the two-pole drive circuit is connected with the first-stage drive circuit, and the output side of the two-pole drive circuit is connected with the grid of the MOSFET and used for driving the MOSFET.
Further, the primary driving circuit includes a first capacitor C1, a fourth capacitor C4, a sixth capacitor C6, a seventh capacitor C7, an eighth resistor R8 and a first driving chip IRS 2127;
the Vcc end of the first driving chip, the first end of the fourth capacitor C4 and the first end of the seventh capacitor C7 are all connected to a power supply Vcc, and the second end of the seventh capacitor C7 is grounded GND; the second end of the fourth capacitor C4 and the port COM of the first driving chip are grounded GND; the first capacitor C1 is connected in series between the port VB and the port VS of the first driving chip, and the port VB of the first driving chip is connected with a power supply Vcc; the sixth capacitor C6 is connected in series between the port CS and the port VS of the first driver chip; the first end of the eighth resistor R8 is connected to the port HO of the first driver chip, the PWM signal of the control side is connected to the port IN of the first driver chip, and the port FAULT of the first driver chip is connected to the FPGA of the control side.
Further, the secondary driving circuit includes a second capacitor C2, a third capacitor C3, a fifth capacitor C5, a first resistor R1, a second resistor R2, a third resistor R3, a fourth resistor R4, a fifth resistor R5, a sixth resistor R6, a second diode D2, and a second driving chip 1EDNI60N12 AF;
a second end of an eighth resistor R8 IN the primary driving circuit is connected to a port IN1 of a second driving chip; after the port IN2 and the port GND of the second driving chip are connected with the port VS of the first driving chip IN the primary driving circuit, the common terminal is connected into the source electrode of the MOSFET; the fifth capacitor C5 is connected in series between the port VCC1 and the port GND1 of the second driving chip, the third capacitor C3 is connected in series between the port GND1 and the port GND2 of the second driving chip, the anode of the second diode D2 is connected to the port GND2 of the second driving chip, and the cathode of the second diode D2 is connected to the port GND1 of the second driving chip; the second capacitor C2 is connected in series between a port VCC2 and a port GND2 of the second driving chip, and a port VCC2 of the second driving chip is connected with a power supply VCC; the port OUT1 of the second driving chip is respectively connected to the first ends of the second resistor R2 and the fourth resistor R4, and the port OUT2 of the second driving chip is respectively connected to the first ends of the first resistor R1 and the third resistor R3; the second ends of the first resistor R1 and the second resistor R2 are connected to the first end of the fifth resistor R5, and the first end of the fifth resistor R5 is connected to the gate of the second high-current MOSFET Q2; the second ends of the third resistor R3 and the fourth resistor R4 are connected to the first end of the sixth resistor R6, and the first end of the sixth resistor R6 is connected to the gate of the first high-current MOSFET Q1.
Further, the overcurrent detection circuit includes a seventh resistor R7, a ninth resistor R9, and a first diode D1;
the B point of the CS port of the primary driving circuit is connected with first ends of a seventh resistor R7 and a ninth resistor R9, the second end of the ninth resistor R9 is connected with the anode of a first diode D1, and the cathode of the first diode D1 is connected with the drains of a first large-current MOSFET Q1 and a second large-current MOSFET Q2;
when the first large-current mosfet q1 or the second large-current mosfet q2 is short-circuited, the voltage at the point B of the port CS of the first driving chip in the first-stage driving circuit is increased, the port CS judges whether an overcurrent phenomenon occurs through the internal comparison circuit, and if the overcurrent phenomenon occurs, the overcurrent information is fed back to the control side through the port FAULT of the first driving chip, and an overcurrent alarm is given.
Further, the maximum gate driving current of the diode driving circuit is 10A, and is used for turning on and off the first large-current mosfet q1 and the second large-current mosfet q 2.
The invention is further described in detail below with reference to the accompanying drawings and examples.
Examples
With reference to fig. 1, the multi-stage high-current MOSFET driving circuit with current protection function of the present invention is characterized by comprising a first-stage driving circuit, an overcurrent detection circuit, a second-stage driving circuit and MOSFETs, wherein the MOSFETs include a first high-current MOSFET Q1 and a second high-current MOSFET Q2, which are arranged in parallel;
the primary driving circuit is used for carrying out overcurrent detection, a port IN of the primary driving circuit receives a PWM signal of a control side, a port CS is connected with the overcurrent detection circuit for carrying out overcurrent judgment, and a port FAULT feeds the overcurrent signal back to the control side to send out an overcurrent alarm;
the overcurrent detection circuit is used for detecting the current and transmitting current data to the primary drive circuit;
the input side of the two-pole drive circuit is connected with the first-stage drive circuit, and the output side of the two-pole drive circuit is connected with the grid of the MOSFET and used for driving the MOSFET.
With reference to fig. 2, the primary driving circuit includes a first FPGA, a first capacitor C1, a fourth capacitor C4, a sixth capacitor C6, a seventh capacitor C7, and an eighth resistor R8; the over-current detection circuit comprises a seventh resistor R7, a ninth resistor R9 and a first diode D1; the secondary driving circuit comprises a second FPGA, a second capacitor C2, a third capacitor C3, a fifth capacitor C5, a first resistor R1, a second resistor R2, a third resistor R3, a fourth resistor R4, a fifth resistor R5, a sixth resistor R6 and a second diode D2;
the B point of the CS port of the primary driving circuit is connected with the first ends of a seventh resistor R7 and a ninth resistor R9, the second end of the ninth resistor R9 is connected with the first end of a first diode D1, the second end of the first diode D1 is connected with the drains of a first large-current MOSFET Q1 and a second large-current MOSFET Q2, when the first large-current MOSFET Q1 or the second large-current MOSFET Q2 is short-circuited, the voltage of the B point of the CS port of the primary driving circuit is increased, the CS port of the primary driving circuit judges whether an overcurrent phenomenon occurs through an internal comparison circuit, and if the overcurrent phenomenon occurs, overcurrent information is fed back to a control side through the FAULT port of the primary driving circuit, and an overcurrent alarm is given.
Taking the first large-current MOSFET Q1 in FIG. 2 as an example, the voltage between the drain D1 and the source S1 of the first large-current MOSFET Q1 is UD1S1Indicating that the voltage drop across the first diode D1 is UDIndicating that the voltage at point B is UBIn this case, the voltage at point B is as follows:
Figure BDA0002853374190000051
the overcurrent protection function of the primary drive circuit has the specific working process that: when the first large-current MOSFET Q1 normally works, the voltage U at the point BBIn the threshold voltage range of the CS port, no overcurrent alarm occurs; when the first large current MOSFET Q1 is short-circuited, the current at the drain D1 becomes large in the over-current detection circuit, resulting in a voltage U between the drain D1 and the source S1D1S1Increasing the voltage at the point B, wherein the voltage at the point B is obtained by dividing the voltage through a seventh resistor R7 and a ninth resistor R9, resulting in a voltage U at the point BBAnd the voltage of the point B is also increased to exceed the threshold voltage of the port CS, the diode driving circuit cuts off the Q1 through the ports OUT1 and OUT2 through the third resistor R3 and the fourth resistor R4, and the overcurrent information is fed back to the control side through the \ FAULT pin of the primary driving circuit to send an overcurrent alarm signal.
Further, the maximum gate driving current of the diode driving circuit is 10A, a diode driving circuit port IN1 is connected to a first end of an eighth resistor R8, a second end of the eighth resistor R8 is connected to a HO port of the primary driving circuit, diode driving circuit ports OUT1 and OUT2 are connected to first ends of a third resistor R3 and a fourth resistor R4, and second ends of the third resistor R3 and the fourth resistor R4 are connected to a gate G1 of a first large-current mosfet q 1; the diode driving circuit ports OUT1 and OUT2 are connected to first ends of a first resistor R1 and a second resistor R2, and second ends of the first resistor R1 and a first resistor R2 are connected to a gate G2 of a second high-current MOSFET Q2.
Finally, it should be noted that: the above embodiments are only for illustrating the technical solutions of the present invention and not for limiting the same, and any person skilled in the art may apply the equivalent embodiments changed or modified into equivalent variations using the technical contents disclosed above to other fields, but any simple modification, equivalent variation and modification made to the above embodiments according to the technical essence of the present invention will still fall within the protection scope of the technical solutions of the present invention without departing from the technical contents of the present invention.

Claims (5)

1. A multi-stage high-current MOSFET drive circuit with a current protection function is characterized by comprising a primary drive circuit, an overcurrent detection circuit, a secondary drive circuit and MOSFETs, wherein the MOSFETs comprise a first high-current MOSFET (Q1) and a second high-current MOSFET (Q2) which are arranged in parallel;
the primary driving circuit is used for carrying out overcurrent detection, and a port IN of the primary driving circuit receives a PWM signal at a control side; the port CS is connected with an overcurrent detection circuit to perform overcurrent judgment; the port FAULT feeds back an overcurrent signal to the control side and sends out an overcurrent alarm;
the over-current detection circuit is used for detecting the current flowing through the MOSFET and transmitting current data to the primary driving circuit;
the input side of the two-pole drive circuit is connected with the first-stage drive circuit, and the output side of the two-pole drive circuit is connected with the grid of the MOSFET and used for driving the MOSFET.
2. The multi-stage high-current MOSFET driving circuit with current protection function of claim 1, wherein said one stage driving circuit comprises a first capacitor (C1), a fourth capacitor (C4), a sixth capacitor (C6), a seventh capacitor (C7), an eighth resistor (R8) and a first driving chip IRS 2127;
the Vcc end of the first driving chip, the first end of the fourth capacitor (C4) and the first end of the seventh capacitor (C7) are all connected to a power supply Vcc, and the second end of the seventh capacitor (C7) is grounded GND; the second end of the fourth capacitor (C4) and the port COM of the first driving chip are grounded GND; the first capacitor (C1) is connected in series between the port VB and the port VS of the first driving chip, and the port VB of the first driving chip is connected with a power supply Vcc; the sixth capacitor (C6) is connected in series between the port CS and the port VS of the first driving chip; the first end of the eighth resistor (R8) is connected with the port HO of the first driving chip, the PWM signal of the control side is connected into the port IN of the first driving chip, and the port FAULT of the first driving chip is connected into the FPGA of the control side.
3. The multi-stage large-current MOSFET driving circuit with current protection function of claim 2, wherein said secondary driving circuit comprises a second capacitor (C2), a third capacitor (C3), a fifth capacitor (C5), a first resistor (R1), a second resistor (R2), a third resistor (R3), a fourth resistor (R4), a fifth resistor (R5), a sixth resistor (R6), a second diode (D2) and a second driving chip 1 ED60N 12 NI 12 AF;
a second end of an eighth resistor (R8) IN the primary driving circuit is connected to a port IN1 of a second driving chip; after the port IN2 and the port GND of the second driving chip are connected with the port VS of the first driving chip IN the primary driving circuit, the common terminal is connected into the source electrode of the MOSFET; a fifth capacitor (C5) is connected in series between a port VCC1 and a port GND1 of the second driving chip, a third capacitor (C3) is connected in series between a port GND1 and a port GND2 of the second driving chip, and the anode of a second diode (D2) is connected to the port GND2 and the cathode of the second diode is connected to the port GND1 of the second driving chip; the second capacitor (C2) is connected in series between the port VCC2 and the port GND2 of the second driving chip, and the port VCC2 of the second driving chip is connected with the power supply VCC; the port OUT1 of the second driving chip is respectively connected to the first ends of the second resistor (R2) and the fourth resistor (R4), and the port OUT2 of the second driving chip is respectively connected to the first ends of the first resistor (R1) and the third resistor (R3); second ends of the first resistor (R1) and the second resistor (R2) are connected to a first end of a fifth resistor (R5), and a first end of the fifth resistor (R5) is connected to a gate of a second high-current MOSFET (Q2); the second ends of the third resistor (R3) and the fourth resistor (R4) are connected to the first end of the sixth resistor (R6), and the first end of the sixth resistor (R6) is connected to the gate of the first high-current MOSFET (Q1).
4. The multi-stage high current MOSFET drive circuit with current protection as claimed in claim 3, wherein said over-current detection circuit comprises a seventh resistor (R7), a ninth resistor (R9) and a first diode (D1);
the B point of the CS port of the primary driving circuit is connected with first ends of a seventh resistor (R7) and a ninth resistor (R9), the second end of the ninth resistor (R9) is connected with the anode of a first diode (D1), and the cathode of the first diode (D1) is connected with the drains of a first large-current MOSFET (Q1) and a second large-current MOSFET (Q2);
when the first large-current MOSFET (Q1) or the second large-current MOSFET (Q2) is short-circuited, the voltage of a point B of a port CS of a first driving chip in a primary driving circuit is increased, the port CS judges whether an overcurrent phenomenon occurs or not through an internal comparison circuit, if the overcurrent phenomenon occurs, overcurrent information is fed back to a control side through a port FAULT of the first driving chip, and an overcurrent alarm is sent out.
5. The multi-stage high current MOSFET drive circuit with current protection as claimed in claim 4, wherein said diode drive circuit has a maximum gate drive current of 10A for turning on and off the first high current MOSFET (Q1) and the second high current MOSFET (Q2).
CN202011536960.1A 2020-12-23 2020-12-23 Multi-stage high-current MOSFET (metal-oxide-semiconductor field effect transistor) driving circuit with overcurrent protection function Pending CN112615532A (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113676026A (en) * 2021-10-22 2021-11-19 深圳英集芯科技股份有限公司 Driving circuit and related product
WO2024077839A1 (en) * 2022-10-09 2024-04-18 深圳英集芯科技股份有限公司 Fast-charge drive circuit and related product

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113676026A (en) * 2021-10-22 2021-11-19 深圳英集芯科技股份有限公司 Driving circuit and related product
CN113676026B (en) * 2021-10-22 2022-02-18 深圳英集芯科技股份有限公司 Driving circuit and related product
WO2023065789A1 (en) * 2021-10-22 2023-04-27 深圳英集芯科技股份有限公司 Drive circuit and related product
WO2024077839A1 (en) * 2022-10-09 2024-04-18 深圳英集芯科技股份有限公司 Fast-charge drive circuit and related product

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Inventor after: Wang Po

Inventor after: Dong Dingfeng

Inventor after: Wang Chao

Inventor after: Li Luyi

Inventor after: Jiang Zhe

Inventor after: Yang Zhida

Inventor after: Dong Haixing

Inventor after: Zhang Li

Inventor before: Wang Po

Inventor before: Wang Chao

Inventor before: Li Luyi

Inventor before: Jiang Zhe

Inventor before: Yang Zhida

Inventor before: Dong Haixing

Inventor before: Zhang Li