CN112614924A - LED device and module - Google Patents

LED device and module Download PDF

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Publication number
CN112614924A
CN112614924A CN202011547725.4A CN202011547725A CN112614924A CN 112614924 A CN112614924 A CN 112614924A CN 202011547725 A CN202011547725 A CN 202011547725A CN 112614924 A CN112614924 A CN 112614924A
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Prior art keywords
layer
outer layer
led
light
led device
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CN202011547725.4A
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Chinese (zh)
Inventor
姚述光
万垂铭
曾照明
龙小凤
肖国伟
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APT Electronics Co Ltd
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APT Electronics Co Ltd
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Priority to CN202011547725.4A priority Critical patent/CN112614924A/en
Publication of CN112614924A publication Critical patent/CN112614924A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Abstract

The invention discloses an LED device and a module, wherein the LED device comprises: the LED chip comprises a metal substrate layer, at least one LED chip, a light refraction layer and a protective outer layer; the LED chip is arranged on the metal substrate layer and is electrically connected with the metal substrate layer; the protective outer layer is arranged on the upper edge of the metal substrate layer in a surrounding mode to form a concave portion, and the light refraction layer is arranged in the concave portion; the light refraction layer is arranged in the protective outer layer and is coated on the LED chip; the light refraction layer comprises a convex protection layer in a semi-elliptical shape, and the convex protection layer is a part of the light refraction layer higher than the protection outer layer; the LED device increases the light emitting of the side surface of the LED through the refraction of light, and increases the light emitting angle of the light source.

Description

LED device and module
Technical Field
The invention belongs to the technical field of LED display, and particularly relates to an LED device and a module.
Background
The dynamic dimming technology of the LED backlight source has high contrast and excellent display effect, and is gradually a new favorite in the market of LED related products. Dynamic dimming requires multiple zones to control multiple light sources, thereby causing a sharp increase in product cost, making the terminal prohibitively expensive. By increasing the light emitting angle of a single backlight source, the number of LEDs can be reduced, so that the cost of the terminal can be greatly reduced. Therefore, how to increase the light emitting angle of a single backlight source is a problem to be solved at present.
Disclosure of Invention
In order to overcome the technical defects, the invention provides the LED device and the module, the LED device increases the light emitting from the side surface of the LED through the refraction of light, and the light emitting angle of a light source is increased.
In order to solve the problems, the invention is realized according to the following technical scheme:
in a first aspect, the present invention provides an LED device comprising: the LED chip comprises a metal substrate layer, at least one LED chip, a light refraction layer and a protective outer layer;
the LED chip is arranged on the metal substrate layer and is electrically connected with the metal substrate layer; the protective outer layer is arranged on the upper edge of the metal substrate layer in a surrounding mode to form a concave portion, and the light refraction layer is arranged in the concave portion; the light refraction layer is arranged in the protective outer layer and is coated on the LED chip; the light refraction layer comprises a convex protection layer in a semi-elliptical shape, and the convex protection layer is a part of the light refraction layer higher than the outer protection layer.
Further, the protective outer layer comprises a first outer layer, a second outer layer, a third outer layer and a fourth outer layer which are connected in sequence; the first outer layer, the second outer layer, the third outer layer and the fourth outer layer form a square structure.
Further, the projection profiles of the parts of the convex protective layer higher than the protective outer layer along the thickness direction of the first outer layer, the second outer layer, the third outer layer or the fourth outer layer respectively satisfy
Figure BDA0002856184230000011
Wherein a > b > 0, y>0, a is the major semi-axis of the projected contour, and b is the minor semi-axis of the projected contour.
Further, the ratio b/a of the minor axis to the major axis is between 0.4 and 0.8.
Furthermore, filling particles are arranged in the convex protection layer.
Further, the refractive index of the light refraction layer is between 1.3 and 1.57.
Further, the metal base layer comprises a positive electrode metal base and a negative electrode metal base which are not connected with each other.
In a second aspect, the present invention provides an LED module, which includes a plurality of LED devices as described in the first aspect, a PCB board, an IC driver, a diffusion sheet, a white light conversion layer, and a brightness enhancement sheet.
Compared with the prior art, the invention has the beneficial effects that:
the invention discloses an LED device and a module, wherein in the LED device, a light refraction layer is coated on an LED chip, the LED chip is protected, meanwhile, a convex protective layer on the light refraction layer can refract light, so that the light-emitting angle of the LED device does not show Lambert distribution, the effect of increasing the light-emitting angle is realized, the protective outer layer plays a role in protecting the LED chip, the light refraction layer and the reflected light, the spatial distribution of the LED device is changed, and the uniformity of the LED module is favorably improved.
Drawings
Embodiments of the invention are described in further detail below with reference to the attached drawing figures, wherein:
fig. 1 is a side view of an LED device in example 1;
FIG. 2 is a side view of another angle of the LED device of example 1;
FIG. 3 is a schematic view of increasing the light emitting angle of the convex protective layer in example 1;
FIG. 4 is a side view of an LED module of example 2;
fig. 5 is a schematic view of the connection between the PCB board and the LED device in embodiment 2.
Description of the labeling: 1. an LED device; 2. a metal base layer; 21. a positive electrode metal substrate; 22. a negative electrode metal substrate; 3. an LED chip; 4. a light refracting layer; 41. a convex protective layer; 5. an outer protective layer; 100. a PCB board; 200. an IC driver; 300. a diffusion sheet; 400. a white light conversion layer; 500. a brightness enhancement film.
Detailed Description
The preferred embodiments of the present invention will be described in conjunction with the accompanying drawings, and it will be understood that they are described herein for the purpose of illustration and explanation and not limitation.
Example 1
In a first aspect, the present embodiment discloses that the present embodiment discloses an LED device 1, and with reference to fig. 1-2, the LED device includes: the LED light source comprises a metal substrate layer 2, at least one LED chip 3, a light refraction layer 4 and a protective outer layer 5;
the metal base layer 2 comprises a positive electrode metal base 21 and a negative electrode metal base 22 which are not connected with each other; the LED chip 3 is arranged on the metal substrate layer 2, and the LED chip 3 is electrically connected with the metal substrate layer 2; the protective outer layer 5 surrounds the upper edge of the metal substrate layer 2 to form a concave part, a light refraction layer 4 is arranged in the concave part, and the light refraction layer 4 is coated on the LED chip 3; the light refraction layer 4 includes a convex protection layer 41 having a semi-elliptical shape, and the convex protection layer 41 is a portion of the light refraction layer 4 higher than the protection outer layer 5.
Specifically, the LED chip 3 is disposed on the metal substrate layer 2, and the anode of the LED chip 3 is connected to the anode metal substrate 21, and the cathode of the LED chip 3 is connected to the cathode metal substrate 22.
In the above embodiment, the protective outer layer 5 includes a first outer layer, a second outer layer, a third outer layer, and a fourth outer layer, which are connected in sequence; the first outer layer, the second outer layer, the third outer layer and the fourth outer layer form a square structure in a surrounding mode. The projection profiles of the parts of the convex protective layer 41 higher than the protective outer layer along the thickness direction of the first outer layer, the second outer layer, the third outer layer or the fourth outer layer respectively satisfy
Figure BDA0002856184230000031
Wherein a > b > 0, y>0, a is a major semi-axis of the projection profile, namely, a half of the width of the convex protection layer 41 in the projection profile, and b is a minor semi-axis of the projection profile, namely, a height of the convex protection layer 41 in the projection profile. The ratio b/a of the minor half axis to the major half axis is between 0.4 and 0.8, if the ratio is too small, the light is refracted inside the LED, and if the ratio is too large, the light is concentrated, so that the aim of making the light uniform cannot be achieved. Referring to fig. 3, the structure of the convex protection layer 41 can refract light, so that light at the middle part of the LED device 1 is reduced, the light emitting angle of the LED device is not lambertian, light at two sides of the middle part is increased, the light emitting angle is increased, and the distance in the LED module can be increased while the uniformity of brightness and color temperature is maintained.
Specifically, the convex protective layer 41 is made of silicone resin, and the protective outer layer 5 is made of SMC material.
In the above embodiment, there are 4 projected outlines in the thickness direction of the first outer layer, the second outer layer, the third outer layer or the fourth outer layer at the portion where the convex protective layer 41 is higher than the protective outer layer, respectively. In the embodiment, in the 2 opposite projection profiles, the ratio b/a of the semiaxis minor to the semiaxis major is 0.51, and in the other 2 opposite projection profiles, the ratio b/a of the semiaxis minor to the semiaxis major is 0.64.
In the above embodiment, the convex protective layer 41 is provided with filler particles, and the filler particles have a light scattering effect. The refractive index of the light refracting layer 4 is 1.3.
In a second aspect, the present invention provides an LED module, referring to fig. 4-5, including a plurality of LED devices 1 as in the first aspect, and a PCB board 100, an IC driver 200, a diffusion sheet 300, a white light conversion layer 400, and a brightness enhancement sheet 500.
Specifically, the PCB 100 is used for connecting the LED module, and plays a role in electrical connection and heat dissipation; the IC driver 200 controls the LED module and controls the current passing through the LED module; the diffusion sheet 300 can diffuse light to allow the light to be uniformly emitted; the white light conversion layer 400 functions as light conversion; the brightness of the LED module is increased by the brightness enhancement film 500.
Example 2
This embodiment discloses an LED device 1, which is different from embodiment 1 in that a convex protective layer 41 is made of an epoxy resin. The protective outer layer 5 is made of PCT material. The refractive index of the light refracting layer 4 is 1.4.
In the embodiment, in the 2 opposite projection profiles, the ratio b/a of the semiaxis minor to the semiaxis major is 0.53, and in the other 2 opposite projection profiles, the ratio b/a of the semiaxis minor to the semiaxis major is 0.53.
Example 3
This embodiment discloses an LED device 1, which is different from embodiment 1 in that a convex protective layer 41 is made of silicone rubber. The outer protective layer 5 is made of EMC material. The refractive index of the light refracting layer 4 is 1.57.
In the embodiment, in the 2 opposite projection profiles, the ratio b/a of the minor axis to the major axis is 0.4, and in the other 2 opposite projection profiles, the ratio b/a of the minor axis to the major axis is 0.8.
The above description is only a preferred embodiment of the present invention, and is not intended to limit the present invention in any way, so that any modification, equivalent change and modification made to the above embodiment according to the technical spirit of the present invention are within the scope of the technical solution of the present invention.

Claims (8)

1. An LED device, comprising: the LED chip comprises a metal substrate layer, at least one LED chip, a light refraction layer and a protective outer layer;
the LED chip is arranged on the metal substrate layer and is electrically connected with the metal substrate layer; the protective outer layer is arranged on the upper edge of the metal substrate layer in a surrounding mode to form a concave portion, and the light refraction layer is arranged in the concave portion; the light refraction layer is arranged in the protective outer layer and is coated on the LED chip; the light refraction layer comprises a convex protection layer in a semi-elliptical shape, and the convex protection layer is a part of the light refraction layer higher than the outer protection layer.
2. The LED device of claim 1, wherein the protective outer layers comprise a first outer layer, a second outer layer, a third outer layer, a fourth outer layer connected in sequence; the first outer layer, the second outer layer, the third outer layer and the fourth outer layer form a square structure.
3. The LED device according to claim 2, wherein a projection profile of a portion of the convex protective layer higher than the protective outer layer in a thickness direction of the first outer layer, the second outer layer, the third outer layer, or the fourth outer layer, respectively, satisfies
Figure FDA0002856184220000011
Wherein a > b > 0, y>0, a is the major semi-axis of the projected contour, and b is the minor semi-axis of the projected contour.
4. The LED device of claim 3, wherein the ratio b/a of the minor and major semi-axes is between 0.4-0.8.
5. The LED device of claim 1, wherein filler particles are disposed within the convex protective layer.
6. The LED device of claim 1 wherein said light refracting layer has a refractive index between 1.3 and 1.57.
7. The LED device of claim 1, wherein the metal base layer comprises a positive metal base and a negative metal base that are not connected to each other.
8. An LED module comprising a plurality of LED devices as claimed in any one of claims 1 to 7, and a PCB board, an IC driver, a diffusion sheet, a white light conversion layer and a brightness enhancement sheet.
CN202011547725.4A 2020-12-24 2020-12-24 LED device and module Pending CN112614924A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202011547725.4A CN112614924A (en) 2020-12-24 2020-12-24 LED device and module

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202011547725.4A CN112614924A (en) 2020-12-24 2020-12-24 LED device and module

Publications (1)

Publication Number Publication Date
CN112614924A true CN112614924A (en) 2021-04-06

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Family Applications (1)

Application Number Title Priority Date Filing Date
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Country Status (1)

Country Link
CN (1) CN112614924A (en)

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