CN112611467A - Uncooled infrared device and manufacturing method thereof - Google Patents
Uncooled infrared device and manufacturing method thereof Download PDFInfo
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00023—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems without movable or flexible elements
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00134—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems comprising flexible or deformable structures
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- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
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Abstract
The invention relates to the technical field of infrared detection, and particularly discloses an uncooled infrared device, which comprises: the device comprises a sensitive area, a cantilever beam, a frame, an active device and a metal lead, wherein the sensitive area is mechanically connected with the frame through the cantilever beam and is suspended in the air; the active device is positioned on the frame and is electrically connected with the sensitive area through the cantilever beam; the metal lead is positioned on the active device and leads out signals of the active device. The invention also discloses a manufacturing method of the uncooled infrared device. The invention realizes an uncooled infrared device with switching and amplifying functions by a simple structure and an MEMS (micro-electromechanical system) process compatible with the device, the device can be manufactured with a circuit respectively, and is integrated by routing at the later stage; therefore, the problem that the performances of devices and circuits need to be mutually compromised when the existing monolithic integration and 3D integration are used for realizing the manufacturing is solved.
Description
Technical Field
The invention relates to the technical field of infrared detection, in particular to an uncooled infrared device and a manufacturing method thereof.
Background
In recent years, the infrared detection field is developed vigorously, and especially the breakthrough of the uncooled infrared imaging technology solves the most outstanding requirement of low-temperature (-77K) cooling work in the infrared imaging technology; meanwhile, the infrared thermal imager has the advantages of high density, miniaturization and portability due to large-scale or ultra-large-scale integration with a reading circuit.
The uncooled infrared device is a core device of the thermal infrared imager, and in order to facilitate signal processing of the uncooled infrared device, a readout circuit is usually required to be provided for performing functions of signal selection, amplification, filtering, AD conversion and the like on the device. At present, the integration of the device and the readout circuit mainly has two forms of monolithic integration and 3D integration. The monolithic integration adopts a CMOS process to manufacture a device and a circuit on the same wafer; the 3D integration is realized by continuously manufacturing devices on a circuit chip through an MEMS (micro-electromechanical systems) process. In both forms, although the functions of the device and the circuit are independent of each other; however, whether the two parts are fabricated simultaneously or serially, their respective properties are compromised to be compatible with each other.
Disclosure of Invention
The invention aims to overcome the defects in the prior art and provides a non-refrigeration infrared device and a manufacturing method of the non-refrigeration infrared device, the device realizes the non-refrigeration infrared device with the switch and amplification functions through a simple structure and an MEMS (micro electro mechanical System) process compatible with the device, the device can be manufactured with a circuit respectively, and the device is integrated through routing at the later stage; therefore, the problem that the performances of devices and circuits need to be mutually compromised when the existing monolithic integration and 3D integration are used for realizing the manufacturing is solved.
As one aspect of the present invention, there is provided an uncooled infrared device including: the device comprises a sensitive area, a cantilever beam, a frame, an active device and a metal lead, wherein the sensitive area is mechanically connected with the frame through the cantilever beam and is suspended in the air; the active device is positioned on the frame and is electrically connected with the sensitive area through the cantilever beam; the metal lead is positioned on the active device and leads out signals of the active device.
The frame further comprises a substrate and a supporting layer, the sensitive area comprises a supporting layer, a functional material layer and an infrared absorption layer, the cantilever beam comprises a supporting layer, a conducting wire layer and a conducting wire protection layer, the active device comprises a gate electrode, a gate insulation layer, an active layer, a source electrode, a drain electrode and an active area dielectric layer, the source electrode and the drain electrode are both connected with the active layer, the supporting layer is arranged on the substrate, the functional material layer, the conducting wire layer and the gate electrode are respectively arranged on the supporting layer, the infrared absorption layer is arranged on the functional material layer, the conducting wire protection layer is arranged on the conducting wire layer, the gate insulation layer is arranged on the gate electrode, the active layer is arranged on the gate insulation layer, the source electrode and the drain electrode are respectively arranged on the active layer, the conductive layer, the active area dielectric layers are arranged on the source electrode and the drain electrode, the gate electrode is connected with the metal lead, and the source electrode or the drain electrode is connected with the metal lead; and the front surface or the back surface of the substrate is provided with a heat insulation cavity for suspending the sensitive area.
Further, the frame comprises a substrate and a support layer, the sensitive region comprises a support layer, a functional material layer and an infrared absorption layer, the cantilever beam comprises a support layer, a wire layer and a wire protection layer, the active device comprises a gate electrode, a gate insulation layer, an active layer, a source electrode, a drain electrode and an active region dielectric layer, and the source electrode and the drain electrode are both connected with the active layer, wherein the support layer is arranged on the substrate, the functional material layer, the wire layer and the active layer are respectively arranged on the support layer, the infrared absorption layer is arranged on the functional material layer, the wire protection layer is arranged on the wire layer, the gate insulation layer, the source electrode and the drain electrode are respectively arranged on the active layer, the gate electrode is arranged in the gate insulation layer, and the active region dielectric layer is arranged on the active layer, the source electrode and the drain electrode, the gate electrode is connected with the metal lead, and the source electrode or the drain electrode is connected with the metal lead; and the front surface or the back surface of the substrate is provided with a heat insulation cavity for suspending the sensitive area.
Further, the substrate is an insulator or a semiconductor; the supporting layer and the lead protection layer are made of silicon oxide, silicon nitride, silicon oxynitride or a combination thereof; the functional material layer is a thermistor, a diode, a thermopile or a pyroelectric structure; the material of the wire layer is doped semiconductor or metal; the gate electrode, the source electrode and the drain electrode are all made of conductive materials, and the conductive materials are doped semiconductors or metals; the infrared absorption layer is made of silicon oxide, silicon nitride or a combination of at least one of silicon oxide and silicon nitride and titanium; the gate insulating layer and the active region dielectric layer are made of silicon oxide, silicon nitride, silicon oxynitride or a combination thereof; the active layer is a semiconductor or a metal oxide.
Further, the metal lead includes a contact hole and a metal wire, wherein the gate electrode is led out through the contact hole with the metal wire, and the source electrode or the drain electrode is led out through the contact hole with the metal wire.
Further, the material of the metal wire comprises one or a combination of Ti, Mo, Al, Cu, Au and Pt.
Furthermore, the supporting layer of the sensitive area is connected with the supporting layer of the frame through the supporting layer of the cantilever beam, so that the sensitive area is mechanically connected with the frame through the cantilever beam and is suspended in the air; the functional material layer is connected with the active layer through the conducting wire layer, so that the active device is electrically connected with the sensitive area through the cantilever beam.
As another aspect of the present invention, there is provided a method for manufacturing an uncooled infrared device, wherein the method for manufacturing the uncooled infrared device includes:
providing a frame;
respectively forming a sensitive area, a cantilever beam and an active device on the frame;
forming a metal lead on the active device;
and etching the frame on the front side or the back side to form a heat insulation cavity so as to suspend the sensitive area.
Further, still include:
providing a substrate;
depositing a support layer on the substrate;
depositing and patterning the support layer to form a functional material layer, a wire layer and a gate electrode;
depositing and etching the functional material layer to form an infrared absorption layer;
depositing and etching the lead layer to form a lead protective layer;
depositing and etching on the gate electrode to form a gate insulating layer;
depositing and etching on the gate insulating layer to form an active layer;
depositing and etching on the active layer to form a source electrode and a drain electrode;
depositing and etching on the active layer, the source electrode and the drain electrode to form an active area dielectric layer, forming a contact hole on the gate electrode through the etching medium, forming a contact hole on the source electrode or the drain electrode, and forming a metal lead on the contact hole through depositing metal and patterning;
and etching the substrate on the front side or the back side to form a heat insulation cavity and suspend the sensitive area in the air.
Further, still include:
providing a substrate;
depositing a support layer on the substrate;
depositing and patterning the support layer to form a functional material layer, a conducting wire layer and an active layer;
depositing and etching the functional material layer to form an infrared absorption layer;
depositing and etching the lead layer to form a lead protective layer;
depositing and etching on the active layer to form a gate insulating layer;
depositing and etching on the gate insulating layer to form a gate electrode;
depositing and etching on the active layer to form a source electrode and a drain electrode;
depositing and etching on the active layer, the source electrode and the drain electrode to form an active area dielectric layer, forming a contact hole on the gate electrode through the etching medium, forming a contact hole on the source electrode or the drain electrode, and forming a metal lead on the contact hole through depositing metal and patterning;
and etching the substrate on the front side or the back side to form a heat insulation cavity and suspend the sensitive area in the air.
The invention has the beneficial effects that: under the condition of not increasing the process difficulty and the cost of manufacturing the device, an active device is formed at the same time through the manufacturing of the infrared device; the device has basic switching and amplifying functions, so that routing integration can be realized with the circuit at the later stage, a new integration scheme is provided for integration of the device and the circuit, and independent optimization of the performance of the device and the circuit is facilitated.
Drawings
The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain the principles of the invention and not to limit the invention.
Fig. 1 to fig. 6 are schematic cross-sectional views illustrating the formation process in the first embodiment of the invention.
Fig. 1 is a schematic diagram of forming a support layer on a substrate according to an embodiment of the invention.
Fig. 2 is a schematic diagram illustrating the formation of a functional material layer, a wiring layer and a gate electrode according to a first embodiment of the invention.
Fig. 3 is a schematic diagram of forming a mid-infrared absorption layer according to an embodiment of the invention.
Fig. 4 is a schematic diagram illustrating the formation of a conductive line protection layer and a gate insulation layer according to an embodiment of the invention.
Fig. 5 is a schematic diagram illustrating the formation of an active layer, a source electrode and a drain electrode in accordance with one embodiment of the present invention.
Fig. 6 is a schematic diagram illustrating the formation of an active area dielectric layer, contact holes, metal leads, and a thermal insulation cavity according to an embodiment of the invention.
Fig. 7 to 12 are schematic cross-sectional views illustrating the process of the second embodiment of the invention.
Fig. 7 is a schematic diagram of forming a support layer on a substrate according to a second embodiment of the invention.
Fig. 8 is a schematic diagram illustrating the formation of a functional material layer, a conductive line layer and an active layer according to a second embodiment of the invention.
FIG. 9 is a schematic diagram of formation of an intermediate infrared absorbing layer according to a second embodiment of the present invention.
Fig. 10 is a schematic view illustrating the formation of a conductive line protection layer and a gate insulating layer according to a second embodiment of the invention.
Fig. 11 is a schematic diagram illustrating the formation of a gate electrode, a source electrode and a drain electrode in the second embodiment of the present invention.
Fig. 12 is a schematic diagram illustrating the formation of an active area dielectric layer, contact holes, metal leads, and a thermal insulation cavity according to a second embodiment of the invention.
In the drawings, the components represented by the respective reference numerals are listed below: 101-a substrate; 102-a support layer; 103-a functional layer; 104-a conductor layer; 105-a gate electrode; 106-an infrared absorbing layer; 107-wire protection layer; 108-a gate insulating layer; 109-an active layer; 110-a source electrode; 111-active region dielectric layer; 112-metal leads; 113-an insulating cavity; 114-drain electrode.
Detailed Description
It should be noted that the embodiments and features of the embodiments may be combined with each other without conflict. The present invention will be described in detail below with reference to the embodiments with reference to the attached drawings.
In order to make those skilled in the art better understand the technical solution of the present invention, the technical solution in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
It should be noted that the terms "first," "second," and the like in the description and claims of the present invention and in the drawings described above are used for distinguishing between similar elements and not necessarily for describing a particular sequential or chronological order. It is to be understood that the data so used may be interchanged under appropriate circumstances in order to facilitate the description of the embodiments of the invention herein. Furthermore, the terms "comprises," "comprising," and "having," and any variations thereof, are intended to cover a non-exclusive inclusion, such that a process, method, system, article, or apparatus that comprises a list of steps or elements is not necessarily limited to those steps or elements expressly listed, but may include other steps or elements not expressly listed or inherent to such process, method, article, or apparatus.
In an embodiment of the present invention, there is provided an uncooled infrared device including: the device comprises a sensitive area, a cantilever beam, a frame, an active device and a metal lead, wherein the sensitive area is mechanically connected with the frame through the cantilever beam and is suspended in the air; the active device is positioned on the frame and is electrically connected with the sensitive area through the cantilever beam; the metal lead is positioned on the active device and leads out signals of the active device.
Preferably, a cross-sectional view of a structure of the uncooled infrared device in the first embodiment of the present invention is shown in fig. 6, where the frame includes a substrate 101 and a support layer 102, the sensitive region includes the support layer 102, a functional material layer 103 and an infrared absorption layer 106, the cantilever beam includes the support layer 102, a conducting wire layer 104 and a conducting wire protection layer 107, the active device includes a gate electrode 105, a gate insulation layer 108, an active layer 109, a source electrode 110, a drain electrode 114 and an active region dielectric layer 111, and the source electrode 110 and the drain electrode 114 are both connected to the active layer 109, where the support layer 102 is disposed on the substrate 101, the functional material layer 103, the conducting wire layer 104 and the gate electrode 105 are disposed on the support layer 102, the infrared absorption layer 106 is disposed on the functional material layer 103, the conducting wire layer 104 is disposed on the conducting wire protection layer 107, and the gate insulation layer 108 is disposed on the gate electrode 105, the active layer 109 is arranged on the gate insulating layer 108, the source electrode 110 and the drain electrode 114 are respectively arranged on the active layer 109, the active region dielectric layer 111 is respectively arranged on the active layer 109, the source electrode 110 and the drain electrode 114, the gate electrode 105 is connected with the metal lead 112, and the source electrode 110 or the drain electrode 114 is connected with the metal lead 112; wherein, the front surface or the back surface of the substrate 101 is provided with a heat insulation cavity 113 to suspend the sensitive region.
Preferably, in the second embodiment of the present invention, as shown in fig. 12, a cross-sectional view of the structure of the uncooled infrared device is shown, where the frame includes a substrate 101 and a support layer 102, the sensitive region includes the support layer 102, a functional material layer 103 and an infrared absorption layer 106, the cantilever beam includes the support layer 102, a conductive line layer 104 and a conductive line protection layer 107, the active device includes a gate electrode 105, a gate insulation layer 108, an active layer 109, a source electrode 110, a drain electrode 114 and an active region dielectric layer 111, and the source electrode 110 and the drain electrode 114 are both connected to the active layer 109, where the substrate 101 is provided with the support layer 102, the support layer 102 is provided with the functional material layer 103, the conductive line layer 104 and the active layer 109, the functional material layer 103 is provided with the infrared absorption layer 106, the conductive line layer 104 is provided with the conductive line protection layer 107, and the active layer 109 is provided with the gate insulation layer, The gate electrode 105 is arranged in the gate insulating layer 108, the active region dielectric layer 111 is arranged on each of the active layer 109, the source electrode 110 and the drain electrode 114, the gate electrode 105 is connected with the metal lead 112, and the source electrode 110 or the drain electrode 114 is connected with the metal lead 112; wherein, the front surface or the back surface of the substrate 101 is provided with a heat insulation cavity 113 to suspend the sensitive region.
Preferably, the substrate 101 is an insulator or a semiconductor, such as quartz, silicon, SOI; the support layer 102 and the wire protection layer 107 are made of a dielectric material, and may be silicon oxide, silicon nitride, silicon oxynitride or a combination thereof; the functional material layer 103 is a thermistor, a diode, a thermopile or a pyroelectric structure; the conductive line layer 104 is a conductive material, and may be a doped semiconductor or a metal; the gate electrode 105, the source electrode 110 and the drain electrode 114 are all made of conductive materials, and the conductive materials are doped semiconductors or metals; the infrared absorption layer 106 is a material with high infrared absorption rate, and may be silicon oxide, silicon nitride or a combination of titanium and at least one of silicon oxide and silicon nitride; the gate insulating layer 108 and the active region dielectric layer 111 are made of silicon oxide, silicon nitride, silicon oxynitride or a combination thereof; the active layer 109 is a semiconductor or a metal oxide.
Preferably, the metal wiring 112 includes a contact hole through which the gate electrode 105 is led out using a metal wiring, and a metal wire through which the source electrode 110 or the drain electrode 114 is led out using a metal wiring.
Preferably, the material of the metal wire comprises one or a combination of Ti, Mo, Al, Cu, Au, Pt.
Preferably, the support layer 102 of the sensitive region is connected with the support layer 102 of the frame through the support layer 102 of the cantilever beam, so that the sensitive region is mechanically connected with the frame through the cantilever beam and is suspended; the functional material layer 103 is connected with the active layer 109 through the wire layer 104, so that the active device is electrically connected with the sensitive region through the cantilever beam.
The embodiment of the invention also provides a manufacturing method of the uncooled infrared device, which comprises the following steps:
providing a frame;
respectively forming a sensitive area, a cantilever beam and an active device on the frame;
forming a metal lead on the active device;
the frame is etched on the front or back side to form a thermally insulating cavity 113 to suspend the sensitive region.
In particular, to further illustrate the fabrication implementation of the uncooled infrared device proposed by the present invention,
fig. 1 to 6 are schematic cross-sectional views illustrating the process of the first embodiment of the invention, as shown in fig. 1 to 6, including:
as shown in fig. 1, a substrate 101 is provided, a support layer 102 is deposited on the substrate 101;
as shown in fig. 2, a functional material layer 103, a wiring layer 104, and a gate electrode 105 are sequentially deposited on the support layer 102, and patterned to obtain a desired pattern;
as shown in fig. 3, depositing and etching an infrared absorption layer 106 on the functional material layer 103, wherein, to enhance infrared absorption, a resonant cavity structure may be formed by a sacrificial layer material;
as shown in fig. 4, depositing and etching a wire protection layer 107 on the wire layer 104, and depositing and etching a gate insulation layer 108 on the gate electrode 105, respectively;
as shown in fig. 5, sequentially depositing and etching an active layer 109 on the gate insulating layer 108, and depositing and etching a source electrode 110 and a drain electrode 114 on the active layer 109;
as shown in fig. 6, depositing and etching an active area dielectric layer 111 on the active layer 109, the source electrode 110 and the drain electrode 114, forming a contact hole on the gate electrode 105 by etching the dielectric, and forming a contact hole on the source electrode 110 or the drain electrode 114, forming a metal lead 112 (not shown because the gate lead is not on the cross section) on the contact hole by depositing and patterning metal; etching the substrate 101 on the front side or the back side to form a heat insulation cavity 113 and a suspension sensitive area;
fig. 6 is a cross-sectional view of the final structure according to the first embodiment of the present invention.
Fig. 7 to 12 are schematic cross-sectional views illustrating the process of the second embodiment of the invention, as shown in fig. 7 to 12, including:
as shown in fig. 7, a substrate 101 is provided, a support layer 102 is deposited on the substrate 101;
as shown in fig. 8, a functional material layer 103, a conductive line layer 104, and an active layer 109 are sequentially deposited on a support layer 102, and patterned to obtain a desired pattern;
as shown in fig. 9, depositing and etching an infrared absorption layer 106 on the functional material layer 103, wherein, to enhance infrared absorption, a resonant cavity structure may be formed by a sacrificial layer material;
as shown in fig. 10, a wire protection layer 107 is formed by deposition etching on the wire layer 104, and a gate insulation layer 108 is formed by deposition etching on the active layer 109;
as shown in fig. 11, sequentially depositing and etching a gate electrode 105 on the gate insulating layer 108, and depositing and etching a source electrode 110 and a drain electrode 114 on the active layer 109;
as shown in fig. 12, depositing and etching an active area dielectric layer 111 on the active layer 109, the source electrode 110 and the drain electrode 114, forming a contact hole on the gate electrode 105 by etching the dielectric, and forming a contact hole on the source electrode 110 or the drain electrode 114, forming a metal lead 112 (not shown because the gate lead is not on the cross section) on the contact hole by depositing and patterning metal; etching the substrate 101 on the front side or the back side to form a heat insulation cavity 113 and a suspension sensitive area;
fig. 12 is a cross-sectional view of the final structure of the second embodiment of the present invention.
It will be understood that the above embodiments are merely exemplary embodiments taken to illustrate the principles of the present invention, which is not limited thereto. It will be apparent to those skilled in the art that various modifications and improvements can be made without departing from the spirit and substance of the invention, and these modifications and improvements are also considered to be within the scope of the invention.
Claims (10)
1. An uncooled infrared device, comprising: the device comprises a sensitive area, a cantilever beam, a frame, an active device and a metal lead, wherein the sensitive area is mechanically connected with the frame through the cantilever beam and is suspended in the air; the active device is positioned on the frame and is electrically connected with the sensitive area through the cantilever beam; the metal lead is positioned on the active device and leads out signals of the active device.
2. The uncooled infrared device according to claim 1, wherein the frame comprises a substrate (101) and a support layer (102), the sensitive region comprises a support layer (102), a functional material layer (103) and an infrared absorption layer (106), the cantilever beam comprises a support layer (102), a wire layer (104) and a wire protection layer (107), the active device comprises a gate electrode (105), a gate insulating layer (108), an active layer (109), a source electrode (110), a drain electrode (114) and an active region dielectric layer (111), and the source electrode (110) and the drain electrode (114) are both connected with the active layer (109), wherein the support layer (102) is disposed on the substrate (101), the functional material layer (103), the wire layer (104) and the gate electrode (105) are disposed on the support layer (102), and the infrared absorption layer (106) is disposed on the functional material layer (103), the wire protection layer (107) is arranged on the wire layer (104), the gate insulating layer (108) is arranged on the gate electrode (105), the active layer (109) is arranged on the gate insulating layer (108), the source electrode (110) and the drain electrode (114) are respectively arranged on the active layer (109), the active region dielectric layer (111) is respectively arranged on the active layer (109), the source electrode (110) and the drain electrode (114), the gate electrode (105) is connected with the metal lead (112), and the source electrode (110) or the drain electrode (114) is connected with the metal lead (112); wherein the front surface or the back surface of the substrate (101) is provided with a heat insulation cavity (113) to suspend the sensitive area.
3. The uncooled infrared device according to claim 1, wherein the frame comprises a substrate (101) and a support layer (102), the sensitive region comprises a support layer (102), a functional material layer (103) and an infrared absorption layer (106), the cantilever beam comprises a support layer (102), a conducting wire layer (104) and a conducting wire protection layer (107), the active device comprises a gate electrode (105), a gate insulating layer (108), an active layer (109), a source electrode (110), a drain electrode (114) and an active region dielectric layer (111), and the source electrode (110) and the drain electrode (114) are both connected with the active layer (109), wherein the support layer (102) is disposed on the substrate (101), the functional material layer (103), the conducting wire layer (104) and the active layer (109) are disposed on the support layer (102), and the infrared absorption layer (106) is disposed on the functional material layer (103), the wire protection layer (107) is arranged on the wire layer (104), the gate insulating layer (108), the source electrode (110) and the drain electrode (114) are respectively arranged on the active layer (109), the gate electrode (105) is arranged in the gate insulating layer (108), the active region dielectric layer (111) is respectively arranged on the active layer (109), the source electrode (110) and the drain electrode (114), the gate electrode (105) is connected with the metal lead (112), and the source electrode (110) or the drain electrode (114) is connected with the metal lead (112); wherein the front surface or the back surface of the substrate (101) is provided with a heat insulation cavity (113) to suspend the sensitive area.
4. Uncooled infrared device according to claim 2 or 3, wherein the substrate (101) is an insulator or a semiconductor; the support layer (102) and the lead protection layer (107) are made of silicon oxide, silicon nitride, silicon oxynitride or a combination thereof; the functional material layer (103) is a thermistor, a diode, a thermopile or a pyroelectric structure; the material of the wire layer (104) is doped semiconductor or metal; the gate electrode (105), the source electrode (110) and the drain electrode (114) are all made of conductive materials, and the conductive materials are doped semiconductors or metals; the material of the infrared absorption layer (106) is silicon oxide, silicon nitride or a combination of at least one of the silicon oxide and the silicon nitride and titanium; the gate insulating layer (108) and the active region dielectric layer (111) are made of silicon oxide, silicon nitride, silicon oxynitride or a combination thereof; the active layer (109) is a semiconductor or a metal oxide.
5. The uncooled infrared device according to claim 2 or 3, wherein the metal wiring (112) includes a contact hole through which the gate electrode (105) is led out with a metal wire and a metal wire through which the source electrode (110) or the drain electrode (114) is led out with the metal wire.
6. The uncooled infrared device of claim 5, wherein the material of the metal wire includes one of Ti, Mo, Al, Cu, Au, Pt or a combination thereof.
7. An uncooled infrared device according to claim 2 or 3, wherein the support layer (102) of the sensitive volume is connected to the support layer (102) of the frame by means of the support layer (102) of a cantilever beam, enabling the sensitive volume to be mechanically connected to the frame and suspended by means of the cantilever beam; the functional material layer (103) is connected with the active layer (109) through the wire layer (104), so that the active device is electrically connected with the sensitive area through the cantilever beam.
8. A manufacturing method of an uncooled infrared device is characterized by comprising the following steps:
providing a frame;
respectively forming a sensitive area, a cantilever beam and an active device on the frame;
forming a metal lead on the active device;
and etching the frame from the front or back to form a heat-insulating cavity (113) to suspend the sensitive region.
9. The method of claim 8, further comprising:
providing a substrate (101);
-depositing a support layer (102) on said substrate (101);
depositing and patterning on the support layer (102) to form a functional material layer (103), a lead layer (104) and a gate electrode (105);
depositing and etching the functional material layer (103) to form an infrared absorption layer (106);
depositing and etching a lead protection layer (107) on the lead layer (104);
depositing and etching to form a gate insulating layer (108) on the gate electrode (105);
depositing and etching an active layer (109) on the gate insulating layer (108);
depositing and etching a source electrode (110) and a drain electrode (114) on the active layer (109);
depositing and etching an active area dielectric layer (111) on the active layer (109), the source electrode (110) and the drain electrode (114), forming a contact hole on the gate electrode (105) through etching the dielectric, forming a contact hole on the source electrode (110) or the drain electrode (114), and forming a metal lead (112) on the contact hole through depositing metal and patterning;
and etching the substrate (101) from the front side or the back side to form a heat insulation cavity (113) suspending the sensitive area.
10. The method of claim 8, further comprising:
providing a substrate (101);
-depositing a support layer (102) on said substrate (101);
depositing and patterning on the support layer (102) to form a functional material layer (103), a lead layer (104) and an active layer (109);
depositing and etching the functional material layer (103) to form an infrared absorption layer (106);
depositing and etching a lead protection layer (107) on the lead layer (104);
depositing and etching the active layer (109) to form a gate insulating layer (108);
depositing and etching to form a gate electrode (105) on the gate insulating layer (108);
depositing and etching a source electrode (110) and a drain electrode (114) on the active layer (109);
depositing and etching an active area dielectric layer (111) on the active layer (109), the source electrode (110) and the drain electrode (114), forming a contact hole on the gate electrode (105) through etching the dielectric, forming a contact hole on the source electrode (110) or the drain electrode (114), and forming a metal lead (112) on the contact hole through depositing metal and patterning;
and etching the substrate (101) from the front side or the back side to form a heat insulation cavity (113) suspending the sensitive area.
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