CN112600062A - 用于粉末床制作或修复的二极管激光器光纤阵列 - Google Patents

用于粉末床制作或修复的二极管激光器光纤阵列 Download PDF

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CN112600062A
CN112600062A CN202011248193.4A CN202011248193A CN112600062A CN 112600062 A CN112600062 A CN 112600062A CN 202011248193 A CN202011248193 A CN 202011248193A CN 112600062 A CN112600062 A CN 112600062A
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powder bed
diode laser
laser
powder
diode
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M.G.琼斯
W.T.卡特
J.W.西尔斯
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General Electric Co
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    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28B—SHAPING CLAY OR OTHER CERAMIC COMPOSITIONS; SHAPING SLAG; SHAPING MIXTURES CONTAINING CEMENTITIOUS MATERIAL, e.g. PLASTER
    • B28B1/00—Producing shaped prefabricated articles from the material
    • B28B1/001—Rapid manufacturing of 3D objects by additive depositing, agglomerating or laminating of material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
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    • H01S3/23—Arrangements of two or more lasers not provided for in groups H01S3/02 - H01S3/22, e.g. tandem arrangements of separate active media
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    • B22F10/00—Additive manufacturing of workpieces or articles from metallic powder
    • B22F10/20—Direct sintering or melting
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Abstract

本发明主题是“用于粉末床制作或修复的二极管激光器光纤阵列”。在粉末床中形成构造的方法包含：将多个激光束从二极管激光器光纤阵列的所选光纤发射到粉末床上，阵列的所选光纤对应于构造的层的模式；使对应于构造的层的模式的粉末床中的粉末同时熔融。用于在粉末床中形成构造的设备包含二极管激光器光纤阵列，其包含多个二极管激光器和对应于多个二极管激光器的多个光纤，每个光纤配置成从相应二极管激光器接收激光束并且发射激光束；配置成支承粉末床或组件的支承，配置成在离光纤末端一定距离支承粉末床；控制器，其配置成控制二极管激光器光纤阵列来将多个激光束从二极管激光器光纤阵列的所选光纤发射到粉末床上，阵列的所选光纤对应于构造的层的模式并且使对应于构造的层的模式的粉末床中的粉末同时熔融。

Description

用于粉末床制作或修复的二极管激光器光纤阵列
本申请是2014年12月8日提交的、申请号为201480068727.1、发明名称为“用于粉末床制作或修复的二极管激光器光纤阵列”的专利申请的分案申请。
技术领域
本技术一般涉及对供制作或修复组件、更具体地是燃气涡轮机引擎的组件中使用的直接金属激光熔融（DMLM）的二极管激光器光纤阵列的使用。
背景技术
加成制造是实现各种材料（其包含金属、陶瓷和塑料）组件的“3D打印”的已知技术。在加成制造中，部件（part）以逐层方式通过平整金属粉末并且使用高功率激光或电子束来选择性地使粉末融合而构造。在每个层后，添加更多粉末并且激光形成下一个层，同时使它融合到先前的层来制作掩埋在粉末层中的完整组件。加成制造系统和过程用来从数字模型制作精确的三维组件。
在当前粉末床（powder bed）系统中制作构造中，激光束或电子束用来扫描粉末层以在粉末床层中烧结和熔融期望形状。对于这类系统的典型每层扫描时间在70-100秒范围中。对于一些应用，构造能够需要数天的处理时间。DMLM的一个应用是在对飞行器的燃气涡轮机引擎的机翼制作和修复中。机翼的几何形状难以使用常规铸造技术形成，因而已提出使用DMLM过程或电子束熔融过程来制作机翼。由于层构造在彼此上并且逐横截面接合彼此，例如对于修复，可产生具有需要的几何形状的机翼或其部分。机翼可需要后处理来提供期望结构特性。
激光器扫描直接金属激光熔融（DMLM）系统的另一个问题是快速冷却速率，其能够在加成制造构造过程期间导致某些合金开裂。快速冷却速率在获得可取晶粒生长（例如垂直于层表面的晶粒生长）方面也造成困难。
发明内容
根据本文公开的技术的一个示例，在粉末床中形成构造的方法包括将多个激光束从二极管激光器光纤阵列的所选光纤发射到粉末床上，阵列的所选光纤对应于构造的层的模式；以及使对应于构造的层的模式的粉末床中的粉末同时熔融。
根据本文公开的技术的另一个示例，用于在粉末床中形成构造的设备包括：二极管激光器光纤阵列，其包括多个二极管激光器和对应于该多个二极管激光器的多个光纤，每个光纤配置成从相应二极管激光器接收激光束并且配置成发射激光束；配置成支承粉末床或组件的支承，配置成在离光纤末端一定工作距离支承粉末床；以及控制器，其配置成控制二极管激光器光纤阵列以将多个激光束从二极管激光器光纤阵列的所选光纤发射到粉末床上（阵列的所选光纤对应于构造的层的模式）以及使对应于构造的层的模式的粉末床中的粉末同时熔融。
附图说明
在参考附图阅读下面详细描述时，本技术的这些及其他特征、方面和优势将变得更好理解，其中遍及附图相似的符号代表相似似部件，其中：
图 1A示意图示供本技术使用的二极管激光器光纤阵列；
图1B示意图示供本技术使用的另一个二极管激光器光纤阵列；
图1C示意图示供本技术使用的另一个二极管激光器光纤阵列；
图2示意图示用于根据本技术的示例通过二极管激光器光纤阵列使粉末床层同时熔融的系统；
图3示意图示根据本技术的示例可在二极管激光器光纤阵列中使用的光纤结构；
图4A示意图示可与根据本技术的系统一起使用的光纤阵列；以及
图4B示意图示可与根据本技术的系统一起使用的另一个光纤阵列。
具体实施方式
参考图1A，二极管激光器阵列101（例如，二极管激光条或堆栈）包含多个二极管激光器或发射器103，每个发射辐射束105。多个柱面透镜107定位在二极管激光器103与多个光纤109之间以使每个二极管激光器103与光纤109耦合。光纤109可在二极管激光器阵列与光纤的自由末端之间在束102中提供，如例如在图1A-1C中示出的。然而，应领会，未使用耦合光学器件的二极管光纤激光器阵列可与本技术一起使用，如在下文论述的。
参考图1B，二极管激光器光纤阵列101可包含光纤109末端处的透镜117。透镜117可配置成提供来自光纤109的准直激光束120。参考图1C，二极管激光器光纤阵列101在二极管激光器103与光纤109之间可不包含光学器件（例如，透镜）并且辐射束105可由靠近二极管激光器103的光纤109接收。光纤109在它们的相应末端处可具有透镜117。透镜117可配置成向从光纤109发射的激光束120提供预定发散（divergence）。还应领会，光纤109末端可成形以提供准直或发散激光束120来代替提供透镜。
参考图2，二极管激光器光纤阵列101将激光束120从光纤109引导到粉末床130中以使层中的所有期望粉末同时熔融。为了生成例如要制作的组件或修复的期望模式，打开需要的二极管激光器103以影响来自每个光纤109的期望同时熔融。对于期望模式的熔融过程时间可小于一秒，其比当前扫描过程快至少两个数量级。
粉末床130可提供在组件150例如飞机的燃气涡轮机引擎的机翼上，其在支承170上支承来向组件提供修复。尽管本技术可能可适用于组件上的修复功能，应领会，本技术可适用于新型（new make）组件的加成制造构造。粉末床可提供在支承170上并且二极管激光器光纤阵列101用来逐层构造或制作组件。
支承170可通过致动器或致动器系统175移动，其配置成使支承170在Z方向（即，垂直于粉末床130）上移动，如在图2中示出的。致动器或致动器系统175还可配置成使支承170在XY平面中移动，如在图2中示出的，但支承170在粉末床从每个光纤109的同时熔融期间未在XY平面中移动。致动器或致动器系统175可由控制器135控制，其配置成控制致动器或致动器系统175以及二极管激光器光纤阵列101。致动器或致动器系统175可包含例如一个或多个线性马达和/或水力和/或一个或多个气动活塞和/或一个或多个螺杆传动机构和/或输送机。由于二极管激光器光纤阵列101能够为了模式使层中所有需要的粉末同时熔融，不需要在熔融期间移动阵列101或粉末床130，例如如采用其中激光束或电子束用来扫描粉末层的当前系统进行的。
光纤109阵列（即，光纤109的末端）与粉末床130之间的距离D可以通过在Z方向上移动支承170来控制。距离D可取决于由光纤109发射的激光束120的类型（例如，激光束120是准直还是发散的，以及发散量）、每个二极管激光器103的平均输出功率、每个二极管激光器103的脉冲能量、每个二极管激光器103的脉冲宽度和/或束分布（例如，高斯、顶环（tophat）等）。光纤109的末端可位于在粉末床130上方大约5 mm至大约150 mm，例如大约20 mm至大约80 mm处，使得粉末床130层的任何区域能够通过同时打开需要的二极管激光器103而同时熔融。
控制器135控制每个二极管激光器103的打开和关闭。控制器还可控制速率，以该速率每个二极管激光器103在关闭时其功率被减少。控制器135可在例如大约5至15毫秒或更长（如需要的话）的时帧内打开和关闭每个二极管激光器103。对于粉末130的给定层，例如在要修复的机翼上方，激活期望的激光器二极管103以按照CAD设计使粉末以期望形状熔融，该CAD设计可被输入和/或存储在控制器135中。该过程可根据需要多次重复来加强（build up）需要的修复区域。在系统用来制作组件（例如，机翼）的情况下，过程根据需要多次重复来构造组件。控制器135控制致动器或致动器175以在添加粉末层并且随后由二极管激光器光纤阵列处理时使支承170向下移动。形成的每个层可例如是大约1 μm至大约1 mm厚。在修复机翼的情况下，可形成例如大约100 μm厚的每个层。
控制器135可以是计算机处理器或其他基于逻辑的装置、软件成分（例如，软件应用）和/或硬件成分与软件成分（例如计算机处理器或其他基于逻辑的装置和关联的软件应用、计算机处理器或具有硬接线控制指令的其他基于逻辑的装置等）的组合。
二极管激光器光纤阵列101可由控制器135控制来控制接近或邻近熔融区域的粉末的热度以控制熔融区域的冷却速率。控制器135还可控制二极管激光器光纤阵列101来预热粉末床130和/或组件150。二极管激光器103的预热功率密度可大约100-100000瓦特/cm2。通过预热粉末床130和/或组件150和/或对接近或邻近熔融区域的区域加热，热梯度可控制在基本上仅在垂直于粉末床的方向上（即，在图2中的Z方向上）。这可能有助于对快速凝固冷却速率敏感而开裂的材料。垂直于层表面的可取晶粒生长可采用粉末床层的平面冷却而可实现。这允许形成具有机翼型结构的构造修复的单晶结构和定向凝固（DS）型晶粒结构。还应领会，二极管激光器103可被控制来使粉末床130过热以控制熔融区域的粘度。控制熔融区域的粘度允许控制例如粉末蒸发、凝固层的晶粒结构和/或修复或组件的表面光洁度。
粉末床130中的材料可以是金属粉末，例如CoCrMo粉末。应领会，其他材料例如塑料、陶瓷或玻璃可用于粉末床。取决于粉末床中的材料，每个二极管激光器103的功率可从大约10至大约60瓦特。使用的二极管激光器103的功率可与使用的光纤109的直径有关。二极管激光器103的功率密度可多达大约1000000瓦特/cm2用于使来自每个光纤的层内的粉末熔融。
光纤阵列中的光纤定心位置（例如，如在图4A和4B中示出的）通过光纤109的涂层115或缓冲区的直径来设置。参考图3，光纤109包括由例如硅石形成的芯111和例如由硅石围绕芯111形成的覆层113。为了创建数值孔径并且在光纤109内提供全内反射，硅石芯的折射率(refractory index)可大于硅石覆层的折射率。例如，硅石芯可具有大约1.45的折射率并且硅石覆层可具有大约1.43的折射率。覆层113可具有大约10 μm的厚度。
缓冲区或涂层115环绕覆层113并且可由例如丙烯酸盐形成。为了使光纤109之间的中心间距减少，缓冲区（丙烯酸盐涂层）115可被更薄丙烯酸盐涂层替代来使总光纤直径减少。缓冲区或涂层115的厚度可以是大约62 μm。光纤109的总直径可以是大约200 μm至大约250 μm。
光纤芯111的直径可以是大约105 μm。应领会，可使用大约60 μm的光纤芯直径。另外，应领会，可使用具有各种横截面的光纤109。例如，正方形光纤可用来提高光纤填充。由来自每个光纤109的一个或多个激光束120产生的熔融池（melt pool）大小对应于由一个或多个激光束120产生的有效激光点大小。在准直激光束120的情况下，熔融池大小通常对应于光纤芯111的直径。然而，来自光纤109的激光束120可被控制以产生是例如光纤芯111直径的两至四倍大的熔融池大小。激光束120可被控制成具有发散来提供大于光纤芯111直径的熔融池大小。在发散激光束120的情况下，从阵列101的光纤109的末端到粉末床130的距离D也将影响每个光纤的熔融池大小。还可控制激光束的脉冲宽度和激光束分布来调整由每个光纤提供的熔融池大小。
参考图4A和4B，光纤109的阵列可以是线性的（如在图4A中示出的）或密集布置（如在图4B中示出的）。可使用其他阵列，例如六边形。还应领会，阵列可采用对应于要制作的组件形状的形状。光纤109之间的间距可等于缓冲区或涂层115的直径。
本技术的二极管激光器光纤阵列可用来通过采用用来自需要的二极管激光器束源的同步激光能量来暴露层来处理粉末床层。本技术还允许在一个时帧（其能够小于一秒）中使层中的完整模式熔融并且在需要时控制接近和/或邻近熔融区域的粉末的热度来控制熔融区域的冷却速率。二极管激光器光纤阵列允许准许晶粒结构控制。二极管激光器光纤阵列系统的商业优势包含更少的需要的系统来产生与当前系统相同数量的部件和将功率床系统调整到感兴趣的部件大小。本文公开的技术还可用来执行烧结，例如直接金属激光烧结。
要理解，不是上文描述的所有这类目标或优势都一定可根据任何特定示例实现。因而，例如，本领域中技术人员将认识到本文描述的系统和技术可采用实现或优化如本文教导的一个优势或一组优势的方式体现或执行而不一定实现如本文可教导或建议的其他目标或优势。
尽管本文仅图示和描述本技术的某些特征，但是本领域中技术人员将想到许多修改和改变。因此，要理解，所附权利要求意图涵盖所有这类修改和改变。

Claims (18)

1.一种用于在粉末床中形成构造的设备，所述设备包括：
二极管激光器光纤阵列，所述二极管激光器光纤阵列包括多个二极管激光器和对应于所述多个二极管激光器的多个光纤，每个光纤被配置成从相应二极管激光器接收激光束并且被配置成发射所述激光束；以及
被配置成支承粉末床或组件的支承，所述支承被配置成以离所述光纤的末端一定距离来支承所述粉末床，其中所述二极管激光器光纤阵列被配置成从所述阵列的所选光纤发射多个激光束以使所述粉末床中的粉末层的多部分同时熔融来生成期望的构造。
2.如权利要求1所述的设备，进一步包括控制器，所述控制器耦合至所述二极管激光器光纤阵列并且被配置成控制所述二极管激光器光纤阵列。
3.如权利要求2所述的设备，其中所述控制器进一步被配置成控制每个激光束的持续时间、每个二极管激光器的脉冲能量、每个二极管激光器的脉冲宽度、每个二极管激光器的平均输出功率、每个激光束的能量分布、每个激光束的功率密度、每个激光束的功率的减少的速率和/或所述光纤的末端离所述粉末床的距离当中的至少一个。
4.如权利要求1所述的设备，其中所述二极管激光器光纤阵列进一步被配置成从邻近所述构造的光纤发射激光束并且对邻近所述层的粉末加热以控制熔融粉末的冷却速率。
5.如权利要求4所述的设备，其中所述二极管激光器光纤阵列被配置成在所述层的所述多部分同时熔融之前和/或期间当中的至少一个对邻近所述层的所述粉末的所述粉末加热。
6.如权利要求1所述的设备，其中在多个线性阵列中提供所述光纤。
7.如权利要求6所述的设备，其中采用密集配置来布置所述多个线性阵列。
8.如权利要求1所述的设备，其中每个光纤包括芯、环绕所述芯的覆层和环绕所述覆层的缓冲区。
9.如权利要求8所述的设备，其中所述芯和所述覆层由硅石形成，并且其中所述芯的折射率大于所述覆层的折射率。
10.如权利要求8所述的设备，其中所述芯的直径是从大约60μm至大约105μm。
11.如权利要求8所述的设备，其中所述覆层的厚度是大约10μm。
12.如权利要求8所述的设备，其中所述缓冲区由丙烯酸盐或聚酰亚胺形成。
13.如权利要求8所述的设备，其中所述缓冲区的厚度是大约62μm。
14.如权利要求1所述的设备，其中每个光纤的直径是大约250μm。
15.如权利要求1所述的设备，其中所述光纤具有圆形横截面。
16.如权利要求1所述的设备，进一步包括：
至少一个透镜，所述至少一个透镜被配置成使所述激光束准直。
17.如权利要求1所述的设备，进一步包括：
至少一个透镜，所述至少一个透镜被配置成向所述激光束中的每个激光束提供预定发散。
18.如权利要求1所述的设备，进一步包括：
致动器，所述致动器被配置成使所述支承移动。
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