CN112599688B - Light emitting device and display panel - Google Patents
Light emitting device and display panel Download PDFInfo
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- CN112599688B CN112599688B CN202011469248.4A CN202011469248A CN112599688B CN 112599688 B CN112599688 B CN 112599688B CN 202011469248 A CN202011469248 A CN 202011469248A CN 112599688 B CN112599688 B CN 112599688B
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- 230000005540 biological transmission Effects 0.000 claims description 28
- 230000000903 blocking effect Effects 0.000 claims description 27
- 239000000969 carrier Substances 0.000 claims description 23
- 238000002347 injection Methods 0.000 claims description 18
- 239000007924 injection Substances 0.000 claims description 18
- 239000000758 substrate Substances 0.000 claims description 17
- 230000006798 recombination Effects 0.000 description 10
- 238000000034 method Methods 0.000 description 7
- 238000010586 diagram Methods 0.000 description 5
- 239000011368 organic material Substances 0.000 description 5
- 238000005215 recombination Methods 0.000 description 5
- 239000004642 Polyimide Substances 0.000 description 3
- 239000003086 colorant Substances 0.000 description 3
- 229920001721 polyimide Polymers 0.000 description 3
- 230000005684 electric field Effects 0.000 description 2
- 230000005281 excited state Effects 0.000 description 2
- 230000005525 hole transport Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000003487 electrochemical reaction Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000006552 photochemical reaction Methods 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 238000010791 quenching Methods 0.000 description 1
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- 238000012216 screening Methods 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
- H10K50/12—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising dopants
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
Abstract
The application discloses a light emitting device and a display panel, the light emitting device includes: a first electrode; a second electrode; a light emitting layer between the first electrode and the second electrode, the light emitting layer including a first host material and a guest material, the light emitting layer having a side facing the first electrode and a side facing the second electrode; and the auxiliary light-emitting layer is positioned on at least one side of the light-emitting layer, and the auxiliary light-emitting layer material and the first main body material are light-emitting main body materials for the same color light-emitting device. The application can improve the luminous efficiency of the luminous device.
Description
Technical Field
The application relates to the technical field of display, in particular to a light-emitting device and a display panel.
Background
An Organic Light-Emitting Diode (OLED) is an Organic material-based electroluminescent device, whose basic structure includes an anode, a cathode, and a Light-Emitting layer, and when a voltage is applied to the anode and the cathode, holes generated by the anode and electrons generated by the cathode migrate to the Light-Emitting layer under the action of an electric field, and when the two meet at the Light-Emitting layer, excitons are generated by combination, and Light-Emitting molecules are excited to generate visible Light.
The organic material has different transmission rates to electrons and holes, so that the quantity of the electrons and the holes in the light-emitting layer is unequal, and the recombination center of the electrons and the holes can shift to one side of the electrode; and when the exciton shifts to the light-emitting layer, the exciton is easily disassembled by a larger energy level difference, so that light emission quenching is caused, and the light-emitting efficiency is influenced.
Accordingly, there is a need to provide a new light emitting device.
Disclosure of Invention
The embodiment of the application provides a light-emitting device and a display panel, aiming at improving the light-emitting efficiency of the device.
In one aspect, an embodiment of the present application provides a light emitting device including: a first electrode; a second electrode; a light emitting layer between the first electrode and the second electrode, the light emitting layer including a first host material and a guest material, the light emitting layer having a side facing the first electrode and a side facing the second electrode; and the auxiliary light-emitting layer is positioned on at least one side of the light-emitting layer, and the material of the auxiliary light-emitting layer and the first main body material are light-emitting main body materials for the same color light-emitting device.
According to an aspect of the embodiment of the present application, the material of the auxiliary light emitting layer and the first host material are the same material.
According to one aspect of the embodiment of the present application, the first electrode is used for injecting first carriers, the second electrode is used for injecting second carriers, mobility of the first carriers between the first electrode and the light emitting layer is larger than mobility of the second carriers between the second electrode and the light emitting layer, and the auxiliary light emitting layer is located on one side of the light emitting layer facing the second electrode.
According to one aspect of an embodiment of the application, the first electrode is an anode and the second electrode is a cathode.
According to an aspect of the embodiment of the present application, the light emitting device further includes:
a first auxiliary transmission layer between the first electrode and the light emitting layer; and
and a second auxiliary transmission layer between the second electrode and the auxiliary light emitting layer.
According to one aspect of an embodiment of the present application, the first auxiliary transmission layer includes at least one of: a first carrier injection layer; a first carrier transport layer; a second carrier blocking layer;
the second auxiliary transmission layer includes at least one of: a second carrier injection layer; a second carrier transport layer; a first carrier blocking layer.
According to one aspect of an embodiment of the present application, the second auxiliary transport layer includes a first carrier blocking layer.
According to one aspect of an embodiment of the present application, the auxiliary light emitting layer has a thickness of 1-5nm.
According to one aspect of an embodiment of the present application, the thickness ratio of the auxiliary light emitting layer to the light emitting layer is 1:10-1:20.
in another aspect, an embodiment of the present application provides a display panel, including: a substrate; and a light emitting device layer on the substrate, the light emitting device layer comprising a plurality of light emitting devices arranged in an array, wherein at least some of the plurality of light emitting devices are any of the light emitting devices as described above.
The light-emitting device and the display panel provided by the embodiment of the application comprise the first electrode, the second electrode, the light-emitting layer arranged between the first electrode and the second electrode and the auxiliary light-emitting layer arranged on at least one side of the light-emitting layer, wherein the auxiliary light-emitting layer is additionally arranged on at least one side of the light-emitting layer, so that the range of a film layer capable of effectively emitting light by excitons during carrier recombination can be increased, the offset degree of the excitons is reduced, and the light-emitting efficiency of the device can be further improved.
Drawings
Other features, objects and advantages of the present application will become more apparent upon reading the following detailed description of non-limiting embodiments, taken in conjunction with the accompanying drawings, in which like reference characters designate the same or similar features, and in which the figures are not to scale.
Fig. 1 is a schematic view showing a structure of a light emitting device according to an embodiment of the present application;
fig. 2 is a schematic view showing a structure of a light emitting device according to another embodiment of the present application;
fig. 3 is a schematic view showing a structure of a light emitting device according to still another embodiment of the present application;
fig. 4 is a schematic view showing a structure of a light emitting device according to still another embodiment of the present application;
fig. 5 is a schematic structural diagram of a display panel according to an embodiment of the application.
Reference numerals illustrate:
10-a light emitting device;
110-a first electrode;
120-a second electrode;
130-a light emitting layer;
140-an auxiliary light emitting layer;
150-a first auxiliary transmission layer; 151-a first carrier injection layer; 152-a first carrier transport layer; 153-a second carrier blocking layer;
160-a second auxiliary transport layer; 161-a second carrier injection layer; 162-a second carrier transport layer; 163-a first carrier blocking layer;
20-a substrate;
30-driving the array layer.
Detailed Description
Features and exemplary embodiments of various aspects of the present application will be described in detail below, and in order to make the objects, technical solutions and advantages of the present application more apparent, the present application will be described in further detail below with reference to the accompanying drawings and the detailed embodiments. It should be understood that the specific embodiments described herein are merely configured to illustrate the application and are not configured to limit the application. It will be apparent to one skilled in the art that the present application may be practiced without some of these specific details. The following description of the embodiments is merely intended to provide a better understanding of the application by showing examples of the application.
It is noted that relational terms such as first and second, and the like are used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Moreover, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising … …" does not exclude the presence of other like elements in a process, method, article or apparatus that comprises the element.
It will be understood that when a layer, an area, or a structure is described as being "on" or "over" another layer, another area, it can be referred to as being directly on the other layer, another area, or another layer or area can be included between the layer and the other layer, another area. And if the component is turned over, that layer, one region, will be "under" or "beneath" the other layer, another region.
An Organic Light-Emitting Diode (OLED) is an Organic material-based electroluminescent device, whose basic structure includes an anode, a cathode, and a Light-Emitting layer, and when a voltage is applied to the anode and the cathode, holes generated by the anode and electrons generated by the cathode migrate to the Light-Emitting layer under the action of an electric field, and when the two meet at the Light-Emitting layer, excitons are generated by combination, and Light-Emitting molecules are excited to generate visible Light.
The organic material has different transmission rates to electrons and holes, so that the quantity of the electrons and the holes in the light-emitting layer is unequal, and the recombination center of the electrons and the holes can shift to the cathode side; on one hand, when the exciton deviates from the light-emitting layer, the exciton is easily disassembled by a larger energy level difference, so that light emission is quenched, and the light-emitting efficiency is influenced; on the other hand, the luminescent layer material in the excited state has higher activity, is easy to generate photochemical or electrochemical reaction with the adjacent hole blocking layer material, and leads to cracking or polymerization deterioration of the organic material, thus reducing the service life of the device.
Based on the above problems, embodiments of the present application provide a light emitting device and a display panel, which can improve the light emitting efficiency of the device. The light emitting device and the display panel according to the embodiments of the present application are described in detail below with reference to fig. 1 to 5.
Referring to fig. 1 and fig. 2 together, fig. 1 is a schematic structural diagram of a light emitting device according to an embodiment of the application; fig. 2 is a schematic diagram showing a structure of a light emitting device according to another embodiment of the present application.
The light emitting device 10 provided in the embodiment of the present application includes a first electrode 110, a second electrode 120, a light emitting layer 130, and an auxiliary light emitting layer 140.
The light emitting layer 130 and the auxiliary light emitting layer 140 are both located between the first electrode 110 and the second electrode 120. The light emitting layer 130 includes a first host material and a guest material, and the light emitting layer 130 has a side facing the first electrode 110 and a side facing the second electrode 120. The auxiliary light emitting layer 140 is located on at least one side of the light emitting layer 130, and the material of the auxiliary light emitting layer 140 and the first host material are light emitting host materials for the same color light emitting device 10.
It is understood that the material of the light emitting layer 130 generally includes a light emitting host material for maintaining a layer structure and performing a carrier transport function, and a light emitting guest material for generating light that can be emitted and determining a light emitting color.
Note that, the material of the auxiliary light emitting layer 140 and the first host material are light emitting host materials for the same color light emitting device 10, and when a voltage is applied to the first electrode 110 and the second electrode 120, if carriers are recombined in the auxiliary light emitting layer 140, the auxiliary light emitting layer 140 can also emit light.
According to the light emitting device 10 of the embodiment of the application, the auxiliary light emitting layer 140 is additionally arranged on at least one side of the light emitting layer 130, so that the film range in which excitons can effectively emit light can be increased, the offset degree of the excitons is reduced, and the light emitting efficiency of the device can be further improved.
The light emitting device 10 includes a plurality of light emitting colors, and the light emitting device 10 may be a red light emitting device 10, a green light emitting device 10, or a blue light emitting device 10, and the light emitting color of the light emitting device 10 is not particularly limited in the present application.
In some alternative embodiments, to facilitate the screening of materials, the material of the auxiliary light emitting layer 140 and the first host material may be the same material, i.e., the auxiliary light emitting layer 140 and the light emitting layer 130 may be the same light emitting host material. Of course, the material selected for the auxiliary light emitting layer 140 and the first host material may be different materials, so long as the selected materials are light emitting host materials and can be used for the same color light emitting device 10, which is within the scope of the present application.
It should be noted that the thickness of the auxiliary light emitting layer 140 is not particularly limited in the present application. Alternatively, the thickness of the auxiliary light emitting layer 140 may be 1nm to 5nm.
In some alternative embodiments, the thickness of the auxiliary light emitting layer 140 may be set according to the thickness of the light emitting layer 130. Alternatively, the ratio of the thickness of the auxiliary light emitting layer 140 to the thickness of the light emitting layer 130 may be set to 1:10 to 1:20.
in some alternative embodiments, the auxiliary light emitting layer 140 may be disposed on the side of the light emitting layer 130 facing the first electrode 110 and the side facing the second electrode 120, so that when excitons generated by carrier recombination are offset and diffused to any side of the light emitting layer 130, light can be effectively emitted in the auxiliary light emitting layer 140, and the light emitting efficiency of the device can be ensured. Of course, to avoid excessive light emitting device levels, it is also within the scope of the present application to provide the auxiliary light emitting layer 140 on only one side of the light emitting layer 130.
In some alternative embodiments, the light emitting device 10 provided in the embodiments of the present application, the first electrode 110 may be used to inject a first carrier, the second electrode 120 is used to inject a second carrier, the mobility of the first carrier between the first electrode 110 and the light emitting layer 130 is greater than the mobility of the second carrier between the second electrode 120 and the light emitting layer 130, and the auxiliary light emitting layer 140 is located on the side of the light emitting layer 130 facing the second electrode 120.
It can be understood that since the mobility of the first carriers between the first electrode 110 and the light emitting layer 130 is greater than the mobility of the second carriers between the second electrode 120 and the light emitting layer 130, when a voltage is applied to the first electrode 110 and the second electrode 120, the recombination centers of the first carriers and the second carriers may be shifted toward the electrode side having low mobility, i.e., toward the side of the light emitting layer 130 toward the second electrode 120. In the light emitting device 10 of the embodiment of the application, the auxiliary light emitting layer 140 is added on the side of the light emitting layer 130 facing the second electrode 120, so that excitons generated by the recombination of the first carrier and the second carrier can shift to the auxiliary light emitting layer 140, and the excitons can still effectively emit light in the auxiliary light emitting layer 140, thereby improving the light emitting efficiency of the device.
Referring to fig. 3 and fig. 4 together, fig. 3 is a schematic structural diagram of a light emitting device according to another embodiment of the present application; fig. 4 is a schematic view showing a structure of a light emitting device according to still another embodiment of the present application.
In some alternative embodiments, the light emitting device 10 provided in the embodiments of the present application may further include a first auxiliary transmission layer 150 and a second auxiliary transmission layer 160, where the first auxiliary transmission layer 150 is located between the first electrode 110 and the light emitting layer 130, and the second auxiliary transmission layer 160 is located between the second electrode 120 and the auxiliary light emitting layer 140; when a voltage is applied to the first electrode 110 and the second electrode 120, first carriers generated by the first electrode 110 migrate to the light emitting layer 130 through the first auxiliary transmission layer 150, and second carriers generated by the second electrode 120 migrate to the light emitting layer 130 through the second auxiliary transmission layer 160.
The specific structures of the first auxiliary transmission layer 150 and the second auxiliary transmission layer 160 are various, and the present application is not particularly limited thereto. It is understood that the first auxiliary transport layer 150 may include any one of the first carrier injection layer 151, the first carrier transport layer 152, and the second carrier blocking layer 153; the second auxiliary transport layer 160 may include any one of a second carrier injection layer 161, a second carrier transport layer 162, and a first carrier blocking layer 163.
The carrier injection layer can enable the carriers generated by the electrodes to be smoothly injected into the carrier transmission layer, the carrier transmission layer is responsible for transporting the carriers to the light-emitting layer 130, the second carrier blocking layer 153 can block the second carriers from the second electrode 120 at the interface of the light-emitting layer 130 of the device, the first carrier blocking layer 163 can block the first carriers from the first electrode 110 at the interface of the light-emitting layer 130 of the device, the recombination probability of the first carriers and the second carriers at the interface of the light-emitting layer 130 is further improved, and the light-emitting efficiency of the device is increased.
In some alternative embodiments, the second auxiliary transmission layer 160 includes the first carrier blocking layer 163, and the first carrier blocking layer 163 is located between the second electrode 120 and the auxiliary light emitting layer 140, so that the first carrier blocking layer 163 can block the first carriers from the first electrode 110 at the interface of the auxiliary light emitting layer 140, and in addition, the auxiliary light emitting layer 140 is located between the first carrier blocking layer 163 and the light emitting layer 130, so that the material of the light emitting layer 130 in the excited state and the material of the first carrier blocking layer 163 can be effectively prevented from undergoing chemical reaction, and thus the device lifetime can be improved.
In some alternative embodiments, the first auxiliary transport layer 150 may include a first carrier injection layer 151, a first carrier transport layer 152, and a second carrier blocking layer 153 sequentially stacked in a direction from the first electrode 110 to the light emitting layer 130; the second auxiliary transport layer 160 may include a second carrier injection layer 161, a second carrier transport layer 162, and a first carrier blocking layer 163, which are sequentially stacked from the second electrode 120 to the light emitting layer 130.
In some alternative embodiments, the first electrode 110 may be an anode for generating holes, the second electrode 120 may be a cathode for generating electrons, the auxiliary light emitting layer 140 may be located at a side of the light emitting layer 130 facing the cathode, and then the first carriers are holes and the second carriers are electrons.
It will be appreciated that the mobility of holes is generally much greater than that of electrons, and that the auxiliary light-emitting layer 140 is disposed on the side of the light-emitting layer 130 facing the cathode, so that the degree of displacement of the recombination center of holes and electrons toward the cathode can be reduced, and the recombination center of holes and electrons is far away from the cathode, compared with the prior art; in addition, even if the recombination center of holes and electrons is shifted to the cathode side from the light emitting layer 130, it is shifted to the auxiliary light emitting layer 140, and excitons can efficiently emit light in the auxiliary light emitting layer 140, so that the light emitting efficiency of the device can be improved.
It is understood that the light emitting device 10 provided in the embodiment of the present application may include an anode, a cathode, a light emitting layer 130 between the anode and the cathode, and an auxiliary light emitting layer 140 between the light emitting layer 130 and the cathode.
In some alternative embodiments, the light emitting device 10 provided by the embodiment of the present application may include: an anode, a hole injection layer on the anode, a hole transport layer on the hole injection layer, an electron blocking layer on the hole transport layer, a light emitting layer 130 on the electron blocking layer, an auxiliary light emitting layer 140 on the light emitting layer 130, a hole blocking layer on the auxiliary light emitting layer 140, an electron transport layer on the hole blocking layer, an electron injection layer on the electron transport layer, and a cathode on the electron injection layer.
Referring to fig. 5, fig. 5 is a schematic structural diagram of a display panel according to an embodiment of the application.
In addition, the embodiment of the application also provides a display panel which comprises a substrate 20 and a light-emitting device layer. The light emitting device layer is disposed on the substrate 20, and the light emitting device layer includes a plurality of light emitting devices arranged in an array, at least part of the plurality of light emitting devices being the light emitting device 10 of any of the above embodiments.
It is understood that the display panel may be an organic light emitting diode (Organic Light Emitting Diode, OLED) display panel.
Alternatively, the substrate 20 may be a substrate 20 made of glass, and in some embodiments, may also be a substrate 20 made of Polyimide (PI) material or a material containing PI, such that the substrate 20 is bendable.
In some alternative embodiments, the light emitting device layer may include red, green, and blue light emitting devices arranged in an array, and each of the red, green, and blue light emitting devices may employ the structure of the light emitting device 10 of any of the above embodiments.
Optionally, the display panel further includes a driving array layer 30 disposed between the substrate 20 and the light emitting device layer, and the driving array layer 30 includes a plurality of pixel circuits arranged in an array, each pixel circuit being electrically connected to a corresponding light emitting device to drive the corresponding light emitting device to emit light.
In addition, the embodiment of the application also provides a manufacturing method of the display panel, which can comprise the following steps:
the first electrode 110 is formed on the substrate 20 including pixel regions of different emission colors.
A light emitting layer 130 is formed on the first electrode 110.
An auxiliary light emitting layer 140 is formed on at least one side of the light emitting layer 130.
The second electrode 120 is formed on the light emitting layer 130.
The material of the auxiliary light emitting layer 140 may be a light emitting host material used for the light emitting layer 130.
It should be noted that the step of forming the light emitting layer 130 and the step of forming the auxiliary light emitting layer 140 are not sequential, and specifically may be selected according to the structure of the light emitting device 10 to be manufactured on the substrate 20.
In some alternative embodiments, the light emitting layer 130 may be formed on the first electrode 110, and then the auxiliary light emitting layer 140 may be formed on the light emitting layer 130, and then the light emitting device 10 may be fabricated correspondingly on the substrate 20, where the auxiliary light emitting layer 140 is located on a side of the light emitting layer 130 facing the second electrode 120.
In other alternative embodiments, the auxiliary light emitting layer 140 may be formed on the first electrode 110, and then the light emitting layer 130 may be formed on the auxiliary light emitting layer 140.
Of course, it is also possible to form the auxiliary light emitting layer 140 on the first electrode 110, form the light emitting layer 130 on the auxiliary light emitting layer 140, form another auxiliary light emitting layer 140 on the light emitting layer 130, and finally form the second electrode 120 on the auxiliary light emitting layer 140, and form the auxiliary light emitting layer 140 on the substrate 20 corresponding to the light emitting device 10, where the light emitting layer 130 is disposed on the side facing the first electrode 110 and the side facing the second electrode 120.
It is understood that the first electrode 110 may be used to inject first carriers and the second electrode 120 may be used to inject second carriers.
Optionally, the first electrode may be an anode, the second electrode may be a cathode, the anode may be made of Indium Tin Oxide (ITO) material, and the cathode may be made of Al, ag, or the like.
In some optional embodiments, the method for manufacturing a display panel provided by the present application may include the following steps:
the first electrode 110 is formed on the substrate 20 including pixel regions of different emission colors.
A first auxiliary transmission layer 150 is formed on the first electrode 110.
The light emitting layer 130 is formed on the first auxiliary transmission layer 150.
An auxiliary light emitting layer 140 is formed on the light emitting layer 130 at a position corresponding to a pixel region of at least one light emitting color.
A second auxiliary transmission layer 160 is formed on the auxiliary light emitting layer 140.
The second electrode 120 is formed on the second auxiliary transmission layer 160.
Optionally, the step of forming the first auxiliary transmission layer 150 on the first electrode 110 may include:
a first carrier injection layer 151 is formed on the first electrode 110.
A first carrier transport layer 152 is formed on the first carrier injection layer 151.
A second carrier blocking layer 153 is formed on the first carrier transport layer 152.
Alternatively, the step of forming the second auxiliary transmission layer 160 on the auxiliary light emitting layer 140 may include:
a first carrier blocking layer 163 is formed on the auxiliary light emitting layer 140.
The second carrier transport layer 162 is formed on the first carrier blocking layer 163.
A second carrier injection layer 161 is formed on the second carrier transport layer 162.
These embodiments are not exhaustive or to limit the application to the precise embodiments disclosed, and according to the application described above. Obviously, many modifications and variations are possible in light of the above teaching. The embodiments were chosen and described in order to best explain the principles of the application and the practical application, to thereby enable others skilled in the art to best utilize the application and various modifications as are suited to the particular use contemplated. The application is limited only by the claims and the full scope and equivalents thereof.
Claims (10)
1. A light emitting device, comprising:
a first electrode;
a second electrode;
a light emitting layer between the first electrode and the second electrode, the light emitting layer including a first host material and a guest material, the light emitting layer having a side facing the first electrode and a side facing the second electrode; and
the auxiliary light-emitting layer is positioned on at least one side of the light-emitting layer and is in direct contact with the light-emitting layer, the material of the auxiliary light-emitting layer and the first main body material are light-emitting main body materials for the same color light-emitting device, and carriers can be compounded in the auxiliary light-emitting layer to emit light.
2. The light-emitting device according to claim 1, wherein a material of the auxiliary light-emitting layer and the first host material are the same material.
3. The light-emitting device according to claim 1, wherein the first electrode is configured to inject a first carrier, wherein the second electrode is configured to inject a second carrier, wherein mobility of the first carrier between the first electrode and the light-emitting layer is greater than mobility of the second carrier between the second electrode and the light-emitting layer, and wherein the auxiliary light-emitting layer is located on a side of the light-emitting layer facing the second electrode.
4. A light emitting device according to claim 3 wherein the first electrode is an anode and the second electrode is a cathode.
5. A light emitting device according to claim 3 wherein the light emitting device further comprises:
a first auxiliary transmission layer between the first electrode and the light emitting layer; and
and a second auxiliary transmission layer between the second electrode and the auxiliary light emitting layer.
6. The light emitting device of claim 5, wherein the first auxiliary transmission layer comprises at least one of:
a first carrier injection layer;
a first carrier transport layer;
a second carrier blocking layer;
the second auxiliary transmission layer includes at least one of:
a second carrier injection layer;
a second carrier transport layer;
a first carrier blocking layer.
7. The light emitting device of claim 5, wherein the second auxiliary transport layer comprises a first carrier blocking layer.
8. The light-emitting device according to claim 1, wherein the thickness of the auxiliary light-emitting layer is 1 to 5nm.
9. The light-emitting device according to claim 8, wherein a thickness ratio of the auxiliary light-emitting layer to the light-emitting layer is 1:10-1:20.
10. a display panel, comprising:
a substrate; and
a light emitting device layer on the substrate, the light emitting device layer comprising a plurality of light emitting devices arranged in an array, wherein at least part of the plurality of light emitting devices is a light emitting device according to any one of claims 1 to 9.
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| CN104471733A (en) * | 2012-03-14 | 2015-03-25 | 株式会社半导体能源研究所 | Light-emitting element, light-emitting device, electronic device, and lighting device |
| CN106783932A (en) * | 2016-12-30 | 2017-05-31 | 上海天马有机发光显示技术有限公司 | A kind of organic electroluminescence display panel and device |
| CN110635061A (en) * | 2019-10-23 | 2019-12-31 | 昆山国显光电有限公司 | Display panel and display device |
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