CN112599608A - All-inorganic perovskite battery and manufacturing method thereof - Google Patents
All-inorganic perovskite battery and manufacturing method thereof Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 30
- 238000010521 absorption reaction Methods 0.000 claims abstract description 30
- 230000005525 hole transport Effects 0.000 claims abstract description 30
- XOLBLPGZBRYERU-UHFFFAOYSA-N SnO2 Inorganic materials O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims abstract description 23
- 238000001755 magnetron sputter deposition Methods 0.000 claims abstract description 20
- 239000000463 material Substances 0.000 claims abstract description 16
- 239000010408 film Substances 0.000 claims description 67
- 239000010409 thin film Substances 0.000 claims description 13
- 229910005855 NiOx Inorganic materials 0.000 claims description 12
- 230000005540 biological transmission Effects 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 7
- 229910052751 metal Inorganic materials 0.000 claims description 7
- 239000002105 nanoparticle Substances 0.000 claims description 7
- 229910003107 Zn2SnO4 Inorganic materials 0.000 claims description 6
- 239000011521 glass Substances 0.000 claims description 6
- 239000000758 substrate Substances 0.000 claims description 6
- 238000000034 method Methods 0.000 claims description 5
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims description 4
- 238000003475 lamination Methods 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 239000002245 particle Substances 0.000 claims description 2
- 229910052709 silver Inorganic materials 0.000 claims description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 3
- 229910052760 oxygen Inorganic materials 0.000 abstract description 3
- 239000001301 oxygen Substances 0.000 abstract description 3
- 239000000126 substance Substances 0.000 abstract description 3
- 239000010410 layer Substances 0.000 description 119
- 230000000052 comparative effect Effects 0.000 description 10
- 238000006243 chemical reaction Methods 0.000 description 6
- 238000000151 deposition Methods 0.000 description 5
- 239000002356 single layer Substances 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- MCEWYIDBDVPMES-UHFFFAOYSA-N [60]pcbm Chemical compound C123C(C4=C5C6=C7C8=C9C%10=C%11C%12=C%13C%14=C%15C%16=C%17C%18=C(C=%19C=%20C%18=C%18C%16=C%13C%13=C%11C9=C9C7=C(C=%20C9=C%13%18)C(C7=%19)=C96)C6=C%11C%17=C%15C%13=C%15C%14=C%12C%12=C%10C%10=C85)=C9C7=C6C2=C%11C%13=C2C%15=C%12C%10=C4C23C1(CCCC(=O)OC)C1=CC=CC=C1 MCEWYIDBDVPMES-UHFFFAOYSA-N 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 239000000969 carrier Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- WZAPMUSQALINQD-UHFFFAOYSA-M potassium;ethenyl sulfate Chemical compound [K+].[O-]S(=O)(=O)OC=C WZAPMUSQALINQD-UHFFFAOYSA-M 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 125000003003 spiro group Chemical group 0.000 description 2
- 238000007664 blowing Methods 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 238000011056 performance test Methods 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
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Abstract
The invention discloses an all-inorganic perovskite battery and a manufacturing method thereof. The manufacturing method comprises the steps of manufacturing a first conductive layer, an electron transport layer, a perovskite absorption layer, a hole transport layer and a second conductive layer which are arranged in a laminated mode, wherein the manufacturing method of the electron transport layer and/or the hole transport layer comprises the following steps: forming a plurality of stacked ultrathin oxide films in a magnetron sputtering mode, and changing the power density of magnetron sputtering to ensure that at least two layers of the formed ultrathin oxide films have different energy bands; wherein, the materials of the multilayer ultrathin oxide film are the same. The manufacturing process of the inventionSimple, strong in reproducibility, low in cost, stable in inorganic substance, not easy to react with water and oxygen, and not easy to react with components in the perovskite absorption layer, and can effectively protect the perovskite absorption layer, and SnO2And the mismatching between the common transparent electrode is small, so that the efficiency of the device can be further improved.
Description
Technical Field
The invention relates to a perovskite battery, in particular to an all-inorganic perovskite battery and a manufacturing method thereof, and belongs to the technical field of perovskite devices.
Background
In recent years, with the continuous and intensive research, the perovskite battery has been developed rapidly, the efficiency is increased from the first 3.8% to 25.2%, and the perovskite battery is known as "new hope in the photovoltaic field".
Common perovskite battery structures are divided into mesoscopic structures, mesoscopic superstructures, planar n-i-p type and planar p-i-n type structures, expensive organic material transmission layers such as spiro or PCBM cannot be used in the current mainstream structures, and although the materials can be well combined with perovskites in performance, the expensive price and the sensitivity to air and water cause that the materials cannot be well used in a large area; inorganic transport layers, e.g. NiOx or SnO2，ZnO，Zn2SnO4Etc. have been used in perovskites, but are generally used alone, but the combined device efficiencies have been low, e.g. inverted device structures such as NiOx/perovskite/PCBM/electrodes or electron transport layers(ZnO、SnO2、Zn2SnO4) perovskite/Spiro/electrode.
However, the preparation of existing large-area perovskite cells is limited by the price and scale of the organic transport layer, it is difficult to achieve cost-effective production, and, although the use of NiO has been proposed in the prior artxHole transport layer and SnO2All-inorganic perovskite battery with electron transport layer structure, but the practical efficiency is not high, and the NiO of single layerx/PVSK/SnO2Structures not very good carrier separation, NiOx and SnO2In the case of ultra-thin layers, the individual defects can lead to severe recombination of charge carriers.
Disclosure of Invention
The invention mainly aims to provide an all-inorganic perovskite battery and a manufacturing method thereof, so as to overcome the defects in the prior art.
In order to achieve the purpose, the technical scheme adopted by the invention comprises the following steps:
the embodiment of the invention provides a manufacturing method of an all-inorganic perovskite battery, which comprises the steps of manufacturing a first conducting layer, an electron transport layer, a perovskite absorption layer, a hole transport layer and a second conducting layer which are arranged in a laminated mode, wherein the manufacturing method of the electron transport layer and/or the hole transport layer comprises the following steps:
forming a plurality of stacked ultrathin oxide films in a magnetron sputtering mode, and changing the power density of magnetron sputtering to ensure that at least two layers of the formed ultrathin oxide films have different energy bands; wherein, the materials of the multilayer ultrathin oxide film are the same.
The embodiment of the invention also provides an all-inorganic perovskite battery, which comprises a first conducting layer, an electron transport layer, a perovskite absorption layer, a hole transport layer and a second conducting layer which are sequentially stacked, wherein the first transport layer and/or the second transport layer comprise multiple layers of homogeneous ultrathin oxide thin films which are sequentially stacked, and at least two layers of ultrathin oxide thin films in the multiple layers of ultrathin oxide thin films have different energy bands.
Compared with the prior art, the invention has the advantages that:
1) according to the all-inorganic perovskite battery provided by the embodiment of the invention, the ultra-thin multi-power oxide lamination layers are used on the two sides of the perovskite absorption layer, so that the all-inorganic perovskite battery with low cost and simple structure is realized;
2) the multi-power ultrathin oxide thin films in the all-inorganic perovskite battery provided by the embodiment of the invention can form a step-shaped energy band structure after being superposed, so that a good built-in electric field is formed in the all-inorganic perovskite battery, and particularly under the working condition, the all-inorganic perovskite battery has better electron extraction capability and can effectively improve the short-circuit current of a device;
3) the oxide thin film in the all-inorganic perovskite battery provided by the embodiment of the invention is extremely thin, so that the body resistance of the device is reduced, and the current loss caused by the resistance of the device can be further reduced;
4) the ultrathin oxide film in the all-inorganic perovskite battery provided by the embodiment of the invention is provided with a plurality of nano particles, so that the scattering of photons can be effectively increased, the absorption of the perovskite battery is improved, and the short-circuit current is increased;
5) the all-inorganic perovskite battery provided by the embodiment of the invention has the advantages of simple manufacturing process, strong reproducibility, low cost, stable inorganic substance, difficulty in reaction with water and oxygen, no reaction with components in the perovskite absorption layer, effective protection of the perovskite absorption layer, and SnO2And the mismatch between the common transparent electrode is small, so that the conversion efficiency of the device can be further improved.
Drawings
FIG. 1 is a schematic diagram of the structure of an all-inorganic perovskite battery provided in an exemplary embodiment of the invention;
FIG. 2 is a test graph of the all-inorganic perovskite cells in example 1 and comparative example 2;
FIG. 3 is a test graph of the all-inorganic perovskite cells in example 1 and comparative example 1;
fig. 4 is a schematic structural energy level structure diagram of an all-inorganic perovskite battery provided in an exemplary embodiment of the invention.
Detailed Description
In view of the deficiencies in the prior art, the inventors of the present invention have made extensive studies and extensive practices to provide technical solutions of the present invention. The technical solution, its implementation and principles, etc. will be further explained as follows.
The principle of the all-inorganic perovskite battery provided by the embodiment of the invention is that the ultrathin oxide thin film is prepared under different powers, and the energy band of the oxide thin film has different changes along with the sputtering power, so that a proper energy level difference can be formed on the surface of the perovskite absorption layer, electrons and holes can be better extracted, the efficiency of the device is improved, and the resistivity of the ultrathin oxide thin film is lower, so that the phenomenon of the efficiency reduction of the device caused by the electron loss in a transmission layer is reduced, and meanwhile, the influence caused by lattice mismatch when different materials form a double transmission layer is avoided.
The embodiment of the invention provides a manufacturing method of an all-inorganic perovskite battery, which comprises the steps of manufacturing a first conducting layer, an electron transport layer, a perovskite absorption layer, a hole transport layer and a second conducting layer which are arranged in a laminated mode, wherein the manufacturing method of the electron transport layer and/or the hole transport layer comprises the following steps:
forming a plurality of stacked ultrathin oxide films in a magnetron sputtering mode, and changing the power density of magnetron sputtering to ensure that at least two layers of the formed ultrathin oxide films have different energy bands; wherein, the materials of the multilayer ultrathin oxide film are the same.
Further, the power densities of the formed multilayer ultrathin oxide films are different, and the energy bands of the multilayer ultrathin oxide films are different.
Further, the multilayer ultrathin oxide film comprises a first oxide film close to the perovskite absorption layer and a second oxide film far away from the perovskite absorption layer, and the power density of the first oxide film formed by magnetron sputtering is larger than that of the second oxide film formed by magnetron sputtering.
Further, the power density for forming the ultra-thin oxide film does not exceed0.6-0.8W/cm2。
Further, the manufacturing method comprises the following steps: and (3) adjusting the magnetron sputtering conditions to form an ultrathin oxide film consisting of a plurality of nano particles.
Further, the particle size of the nano-particles is 10-30 nm.
Further, the material of the ultrathin oxide film for forming the electron transport layer comprises SnO2、In2O3、Zn2SnO4And ZnO, the thickness of the ultrathin oxide film forming the electron transport layer is 2-3 nm.
Further, the material of the ultrathin oxide film for forming the hole transport layer comprises NiOxAnd the thickness of the ultrathin oxide film for forming the hole transport layer is 5-20 nm.
Further, the thickness of the electron transport layer is 3-6nm, and the thickness of the hole transport layer is 5-20 nm.
The embodiment of the invention also provides an all-inorganic perovskite battery, which comprises a first conducting layer, an electron transport layer, a perovskite absorption layer, a hole transport layer and a second conducting layer which are sequentially stacked; the first transmission layer and/or the second transmission layer comprise a plurality of layers of homogeneous ultrathin oxide films which are sequentially stacked, and at least two layers of ultrathin oxide films in the plurality of layers of ultrathin oxide films have different energy bands.
Further, the material of the ultrathin oxide film for forming the electron transport layer comprises SnO2、In2O3、Zn2SnO4And ZnO, the thickness of the ultrathin oxide film forming the electron transport layer is 2-3 nm.
Further, the material of the ultrathin oxide film for forming the hole transport layer comprises NiOx(x is more than or equal to 1.5 and less than or equal to 2), and the thickness of the ultrathin oxide film for forming the hole transport layer is 5-20 nm.
Further, the thickness of the electron transport layer is 3-6nm, and the thickness of the hole transport layer is 5-20 nm.
Further, the energy level difference between the electron transport layer and/or the hole transport layer and the perovskite absorption layer is not more than 0.4 eV.
Furthermore, the energy bands of the all-inorganic perovskite battery are distributed in a step shape.
Furthermore, among the multiple ultrathin oxide films in the hole transport layer, the ultrathin oxide film with higher power density has lower valence band position; among the plurality of ultrathin oxide films in the electron transport layer, the ultrathin oxide film with higher power density has lower conduction band position.
Furthermore, the perovskite absorption layer is made of CsPbIxBry，MAPbI3，FAxCsyMA1-x-yPb(IaBrbCl1-a-b) Wherein MA has a structural formula of CH3NH3+，0＜x，y＜1，0＜a，b＜1。
Further, the thickness of the perovskite absorption layer is 300-1000 nm.
Further, the first conductive layer is a metal electrode or a transparent electrode, the metal electrode is made of any one of Ag, Al and Au, the thickness of the metal electrode is 100-200 nm, the transparent electrode is made of IWO or ITO, and the thickness of the transparent electrode is 400-500 nm.
Further, the second conducting layer is a conducting substrate, and the conducting substrate is made of any one of FTO conducting glass, ITO conducting glass, FTO conducting plastic and ITO conducting plastic.
The technical solution, the implementation process and the principle thereof will be further explained with reference to the drawings.
Example 1
Referring to fig. 1, the structure of an all-inorganic perovskite battery is a planar p-i-n type structure, and the all-inorganic perovskite battery comprises FTO conductive glass and NiO which are sequentially stackedxHole transport layer, MAPbI3Layer (i.e. PVSK layer, where MA has the formula CH3NH3+)、SnO2An electron transport layer and an IWO electrode, wherein the thickness of the FTO conductive glass is 500nm,MAPbI3the thickness of the layer is 300-1000nm, the thickness of the IWO electrode is 400-500nm, and the NiO isxNiO with hole transport layer formed by two laminated layersxLayer of each NiOxThe thickness of the layer is 5-20nm, and the two layers of NiOxRelatively far from MAPbI in layer3NiO of the layerxThe layer is formed by magnetron sputtering with high power density and is relatively close to MAPbI3NiO of the layerxThe layer is made by adopting the magnetron sputtering condition with low power density, and the SnO2The electron transport layer is SnO with two laminated layers2Layer of each SnO2The thickness of the layer is 2-3nm, and two layers of SnO2Relatively far from MAPbI in layer3SnO of layer2The layer is formed by magnetron sputtering with high power density and is relatively close to MAPbI3SnO of layer2The layer is formed by adopting a magnetron sputtering condition with low power density; wherein SnO is formed2Layer, NiOxThe power density of the layer is not more than 0.6-0.8W/cm2。
A manufacturing method of an all-inorganic perovskite battery comprises the following steps:
1) manufacturing and forming an FTO conductive substrate by adopting a physical vapor deposition method, an evaporation method or a sputtering method;
2) depositing a first NiO layer with the thickness of 5-10nm on an FTO conductive substrate by adopting a magnetron sputtering mode under the power condition of 2.0-2.5kwxThin film, then first NiO layer under the power condition of 1.5kwxDepositing a second NiO layer with the thickness of 5-10nm on the filmxA film;
3) the perovskite solution with the concentration of 1.2-1.5M is coated on the second layer of NiO by spin coating and blowing processxOn the film, pumping air in a vacuum cavity for 1 minute and 30 seconds, and heating on a heating table at 150 ℃ for 15 minutes to obtain a perovskite absorption layer;
4) depositing a first SnO layer with the thickness of 2-3nm on the perovskite absorption layer by adopting a magnetron sputtering mode under the power condition of 50-100w2Thin film, then SnO on the first layer under the power condition of 150w2Depositing a second SnO layer with the thickness of 2-3nm on the film2A film;
5) SnO on the second layer by adopting a vacuum evaporation or vacuum sputtering mode2And forming a metal electrode with the thickness of 100nm on the film.
Comparative example 1
An all-inorganic perovskite cell of comparative example 1 was substantially identical in structure to the cell of example 1 except that: the cell of comparative example 1 employed a single layer of NiOxThe layer was used as a hole transport layer, and PCBM ([6, 6 ] was stacked]-phenyl-C61-butyric acid isopropyl ester) layer, BCP (2, 9-dimethyl-4, 7-biphenyl-1, 10-phenanthroline) layer as electron transport layer.
Referring to FIG. 2, the current density of the perovskite cell of example 1 was 2mA/cm higher than that of the perovskite cell of comparative example 1 at similar voltages2On the other hand, the current density is improved mainly due to the adoption of a double-power ultrathin film laminated structure.
Comparative example 2
An all-inorganic perovskite cell of comparative example 2 was substantially identical in structure to the cell of example 1, except that: the cell of comparative example 1 employed a single layer of NiOxThe film is used as a hole transport layer and adopts single-layer SnO2The film acts as an electron transport layer.
The batteries of example 1 and comparative examples 1 to 2 were subjected to performance tests, respectively, and the test results are shown in fig. 2 and 3.
According to the all-inorganic perovskite battery provided by the embodiment of the invention, the ultra-thin multi-power oxide lamination layers are used on the two sides of the perovskite absorption layer, so that the all-inorganic perovskite battery with low cost and simple structure is realized.
As shown in fig. 2 and fig. 3, the multi-power ultrathin oxide thin films in the all-inorganic perovskite battery provided in the embodiment of the present invention may form a stepped energy band structure after being stacked, so that a better stepped energy band structure (similar to the structure in fig. a) may be formed in the all-inorganic perovskite battery, and a good built-in electric field may be formed, and particularly under a working condition, the all-inorganic perovskite battery has a better ability of extracting electrons, and may effectively improve a short-circuit current of a device, as can be seen from fig. 4, steps of increasing energy levels may be formed on both sides of a perovskite in the all-inorganic perovskite battery provided in the embodiment of the present invention, so as to increase separation of carriers.
The oxide thin film in the all-inorganic perovskite battery provided in the embodiment of the invention is extremely thin, and as can be seen from the bulk resistance R ═ ρ × L/S, when the area is not changed, the smaller L, the smaller the resistance, the smaller the bulk resistance of the entire device, the lower the current loss in the battery, and the further the current loss due to the resistance itself can be reduced.
The ultrathin oxide film in the all-inorganic perovskite battery provided by the embodiment of the invention is provided with a plurality of nano particles, the smaller nano particles are formed during sputtering deposition and cover the upper surface of the perovskite crystal, after incident light enters from the other side, light which is not completely absorbed can be scattered, and secondary incidence is carried out in the perovskite crystal body, and carriers are generated after being absorbed by the perovskite crystal, so that the scattering of photons can be effectively increased, the absorption of the perovskite battery is improved, and the short-circuit current is increased.
The all-inorganic perovskite battery provided by the embodiment of the invention has the advantages of simple manufacturing process, strong reproducibility, low cost, stable inorganic substance, difficulty in reaction with water and oxygen, no reaction with components in the perovskite absorption layer, effective protection of the perovskite absorption layer, and SnO2And the mismatch between the common transparent electrode is small, so that the conversion efficiency of the device can be further improved.
It should be understood that the above-mentioned embodiments are merely illustrative of the technical concepts and features of the present invention, which are intended to enable those skilled in the art to understand the contents of the present invention and implement the present invention, and therefore, the protection scope of the present invention is not limited thereby. All equivalent changes and modifications made according to the spirit of the present invention should be covered within the protection scope of the present invention.
Claims (10)
1. A method for manufacturing an all-inorganic perovskite battery comprises the steps of a first conductive layer, an electron transport layer, a perovskite absorption layer, a hole transport layer and a second conductive layer which are arranged in a manufacturing lamination mode, and is characterized in that the method for manufacturing the electron transport layer and/or the hole transport layer comprises the following steps:
forming a plurality of stacked ultrathin oxide films in a magnetron sputtering mode, and changing the power density of magnetron sputtering to ensure that at least two layers of the formed ultrathin oxide films have different energy bands; wherein, the materials of the multilayer ultrathin oxide film are the same.
2. The method of manufacturing according to claim 1, wherein: the power densities of the formed multilayer ultrathin oxide films are different, and the energy bands of the multilayer ultrathin oxide films are different.
3. The manufacturing method according to claim 1 or 2, characterized in that: the multilayer ultrathin oxide film comprises a first oxide film close to the perovskite absorption layer and a second oxide film far away from the perovskite absorption layer, and the power density of the first oxide film formed by magnetron sputtering is larger than that of the second oxide film formed by magnetron sputtering.
4. The method of manufacturing according to claim 1, 2 or 3, wherein: the power density for forming the ultrathin oxide film is not more than 0.6-0.8W/cm2。
5. The method of manufacturing according to claim 1, comprising: forming the ultrathin oxide film composed of a plurality of nanoparticles by adjusting magnetron sputtering conditions; preferably, the nanoparticle has a particle size of 10 to 30 nm.
6. The method of manufacturing according to claim 1, wherein: the thickness of the ultrathin oxide film for forming the electron transport layer is 2-3nm, and the thickness of the ultrathin oxide film for forming the hole transport layer is 5-20 nm;
preferably, the thickness of the electron transport layer is 3-6nm, and the thickness of the hole transport layer is 5-20 nm.
7. The method of manufacturing according to claim 1, wherein: the material of the ultrathin oxide film for forming the electron transport layer comprises SnO2、In2O3、Zn2SnO4And ZnO, wherein the material of the ultrathin oxide film for forming the hole transport layer comprises NiOx。
8. An all-inorganic perovskite battery characterized by comprising: the electronic device comprises a first conducting layer, an electron transport layer, a perovskite absorption layer, a hole transport layer and a second conducting layer which are sequentially stacked; the first transmission layer and/or the second transmission layer comprise a plurality of layers of homogeneous ultrathin oxide films which are sequentially stacked, and at least two layers of ultrathin oxide films in the plurality of layers of ultrathin oxide films have different energy bands.
9. The all-inorganic perovskite battery of claim 8, wherein: the material of the ultrathin oxide film for forming the electron transport layer comprises SnO2、In2O3、Zn2SnO4And ZnO, the thickness of the ultrathin oxide film forming the electron transport layer is 2-3 nm;
preferably, the material of the ultra-thin oxide thin film forming the hole transport layer includes NiOxThe thickness of the ultrathin oxide film for forming the hole transport layer is 5-20 nm;
preferably, the thickness of the electron transport layer is 3-6nm, and the thickness of the hole transport layer is 5-20 nm.
10. The all-inorganic perovskite battery of claim 8, wherein: the energy level difference between the electron transport layer and/or the hole transport layer and the perovskite absorption layer is not more than 0.4 eV;
preferably, the energy bands of the all-inorganic perovskite battery are distributed in a step shape;
preferably, in the multiple ultrathin oxide films in the hole transport layer, the higher the power density of the ultrathin oxide film, the lower the valence band position;
among the multiple layers of ultrathin oxide films in the electron transport layer, the ultrathin oxide film with higher power density has lower conduction band position;
preferably, the perovskite absorption layer is made of CsPbIxBry，MAPbI3，FAxCsyMA1-x-yPb(IaBrbCl1-a-b) Wherein MA has a structural formula of CH3NH3+，0＜x，y＜1，0＜a，b＜1；
Preferably, the thickness of the perovskite absorption layer is 300-1000 nm;
preferably, the first conductive layer is a metal electrode or a transparent electrode, the metal electrode is made of any one of Ag, Al and Au, the thickness of the metal electrode is 100-200 nm, the transparent electrode is made of IWO or ITO, and the thickness of the transparent electrode is 400-500 nm;
preferably, the second conducting layer is a conducting substrate, and the material of the conducting substrate comprises any one of FTO conducting glass, ITO conducting glass, FTO conducting plastic and ITO conducting plastic.
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