CN112593263A - Preparation method of silver plating additive on wafer - Google Patents
Preparation method of silver plating additive on wafer Download PDFInfo
- Publication number
- CN112593263A CN112593263A CN202011472019.8A CN202011472019A CN112593263A CN 112593263 A CN112593263 A CN 112593263A CN 202011472019 A CN202011472019 A CN 202011472019A CN 112593263 A CN112593263 A CN 112593263A
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- Prior art keywords
- additive
- silver
- silver plating
- wafer
- plating
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/46—Electroplating: Baths therefor from solutions of silver
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
- C25D7/12—Semiconductors
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Electroplating Methods And Accessories (AREA)
Abstract
The invention discloses a preparation method of a silver plating additive on a wafer, which comprises the following steps: preparing raw materials, taking a proper amount of dimethyl hydantoin, and adding pure water into a stirring tank according to the mass ratio for stirring; adding a certain amount of surfactant according to the mass ratio, and fully stirring; filtering the stirred solution through a filter element to obtain a low-temperature silver plating additive; packaging and storing the finished product of the low-temperature silver-plating additive; the preparation method of the silver plating additive on the wafer avoids the gas decomposed in the using process of silver plating from damaging human bodies, meets the requirement of environmental protection, is convenient to use, can carry out normal electroplating at the temperature of 10-30 ℃, has simple process, stable reaction and high production efficiency, can carry out electroplating after being matched with electroplating solution, ensures that the electroplated product of the product is not oxidized in the air, and ensures that the electroplated product of the product has high purity plating and fine crystallization.
Description
Technical Field
The invention relates to the technical field of buffer tanks, in particular to a preparation method of a silver plating additive on a wafer.
Background
The technology of the silver plating additive on the wafer is widely applied to the electroplating of the IC integrated circuit, compared with the common silver plating technology, the technology of the silver plating additive on the wafer has the characteristics of low corrosivity, simple wastewater treatment and the like, and is a green environment-friendly silver plating system which is dedicated to popularization and use by various countries in the world at present; the common silver plating technology is applied to electroplating of the connector with low precision.
At present, the common silver plating technology has corrosion phenomenon on equipment, can be decomposed into toxic gas in the production process, and has harm to the bodies of operators.
Therefore, there is a need for a method for preparing silver plating additive for wafer to solve the above-mentioned disadvantages.
Disclosure of Invention
Aiming at the defects of the prior art, the invention provides a preparation method of a silver plating additive on a wafer, which solves the problems that the existing common silver plating technology corrodes equipment, decomposes into toxic gas in the production process and damages the bodies of operators.
The invention provides the following technical scheme: a preparation method of a silver plating additive on a wafer comprises the following steps:
step one, preparing raw materials, taking a proper amount of dimethyl hydantoin, and adding pure water into a stirring tank according to a mass ratio for stirring;
secondly, adding a certain amount of surfactant according to the mass ratio, and fully stirring;
filtering the stirred solution through a filter element to obtain a low-temperature silver plating additive;
and step four, packaging and storing the finished product of the low-temperature silver-plating additive.
Preferably, the temperature of the solution in the stirring process of the second step is controlled to be 10-30 ℃, and the stirring time is 2-4 hours.
Preferably, the main component of the surfactant is polyethylene glycol.
Preferably, the filtering is carried out by using a filtering machine in the third step, and the precision of a filter element of the filtering machine is 1-10 um.
Preferably, the mass ratio of the dimethyl hydantoin to the polyethylene glycol is 10-30%: 3-5% and adding the balance of pure water according to the proportion.
Preferably, the low-temperature silver plating additive can be normally plated at 10-30 ℃.
Compared with the prior art, the invention has the following beneficial effects: the preparation method of the silver plating additive on the wafer avoids the gas decomposed in the using process of silver plating from damaging human bodies, meets the requirement of environmental protection, is convenient to use, can carry out normal electroplating at the temperature of 10-30 ℃, has simple process, stable reaction and high production efficiency, can carry out electroplating after being matched with electroplating solution, ensures that the electroplated product of the product is not oxidized in the air, and ensures that the electroplated product of the product is high in pure plating and fine in crystallization.
Detailed Description
The technical solutions in the embodiments of the present invention are clearly and completely described below, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
A preparation method of a silver plating additive on a wafer comprises the following steps:
step one, preparing raw materials, taking a proper amount of dimethyl hydantoin, and adding pure water into a stirring tank according to a mass ratio for stirring;
secondly, adding a certain amount of surfactant according to the mass ratio, and fully stirring;
filtering the stirred solution through a filter element to obtain a low-temperature silver plating additive;
and step four, packaging and storing the finished product of the low-temperature silver-plating additive.
Preferably, the temperature of the solution in the stirring process of the second step is controlled to be 10-30 ℃, and the stirring time is 2-4 hours.
The main component of the surfactant is polyethylene glycol.
And in the third step, a filter is used for filtering, and the precision of a filter element of the filter is 1-10 um.
The mass ratio of dimethyl hydantoin to polyethylene glycol is 10-30%: 3-5% and adding the balance of pure water according to the proportion.
The low-temperature silver plating additive can be used for normal electroplating at 10-30 ℃.
The preparation method of the silver plating additive on the wafer avoids the gas decomposed in the using process of silver plating from damaging human bodies, meets the requirement of environmental protection, is convenient to use, can carry out normal electroplating at the temperature of 10-30 ℃, has simple process, stable reaction and high production efficiency, can carry out electroplating after being matched with electroplating solution, ensures that the electroplated product of the product is not oxidized in the air, and ensures that the electroplated product of the product is high in pure plating and fine in crystallization.
Example 1
Weighing 100 g of dimethyl hydantoin and 30 g of polyethylene glycol, adding the dimethyl hydantoin and the polyethylene glycol into a beaker, adding 870 g of pure water according to the mass ratio, heating the solution in the beaker to 10 ℃, fully stirring the solution for 2 hours by using a stirrer, and filtering the stirred solution by using 1um filter paper to obtain 1000 g of wafer electroplating additive PhenoMet 901.
Electroplating the obtained additive, and electroplating silver on the wafer nickel-titanium-silver semi-finished product according to the following process conditions:
the product electroplated by the above process flow has good coating uniformity, and the thickness measurement data of the product is as follows: (the thickness of the middle 6 pieces of the product is measured, each piece is measured for 3 points, 18 points in total)
Example 2
Weighing 200 g of dimethyl hydantoin and 40 g of polyethylene glycol, adding the weighed materials into a beaker, adding 760 g of pure water according to the mass ratio, heating the solution in the beaker to 20 ℃, fully stirring the solution for 3 hours by using a stirrer, and filtering the stirred solution by using 5 mu m filter paper to obtain 1000 g of wafer electroplating additive PhenoMet 901.
Electroplating the obtained additive, and electroplating silver on the wafer nickel-titanium-silver semi-finished product according to the following process conditions:
produced according to the following process conditions: the product electroplated by the above process flow has good coating uniformity, and the thickness measurement data of the product is as follows: (the thickness of the middle 6 pieces of the product is measured, each piece is measured for 3 points, 18 points in total)
Example 3
Weighing 300 g of dimethyl hydantoin and 50 g of polyethylene glycol, adding the weighed materials into a beaker, adding 650 g of pure water according to the mass ratio, heating the solution in the beaker to 30 ℃, fully stirring the solution for 4 hours by using a stirrer, and filtering the stirred solution by using 10 mu m filter paper to obtain 1000 g of wafer electroplating additive PhenoMet 901.
Electroplating the obtained additive, and electroplating silver on the wafer nickel-titanium-silver semi-finished product according to the following process conditions:
the product electroplated by the above process flow has good coating uniformity, and the thickness measurement data of the product is as follows: (the thickness of the middle 6 pieces of the product is measured, each piece is measured for 3 points, 18 points in total)
It is noted that, herein, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus.
Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.
Claims (6)
1. A preparation method of a silver plating additive on a wafer is characterized by comprising the following steps: the preparation method comprises the following steps:
step one, preparing raw materials, taking a proper amount of dimethyl hydantoin, and adding pure water into a stirring tank according to a mass ratio for stirring;
secondly, adding a certain amount of surfactant according to the mass ratio, and fully stirring;
filtering the stirred solution through a filter element to obtain a low-temperature silver plating additive;
and step four, packaging and storing the finished product of the low-temperature silver-plating additive.
2. The method for preparing the additive for plating silver on the wafer according to claim 1, wherein: and in the second stirring step, the temperature of the solution is controlled to be 10-30 ℃, and the stirring time is 2-4 hours.
3. The method for preparing the additive for plating silver on the wafer according to claim 1, wherein: the main component of the surfactant is polyethylene glycol.
4. The method for preparing the additive for plating silver on the wafer according to claim 1, wherein: and in the third step, a filter is used for filtering, and the precision of a filter element of the filter is 1-10 um.
5. The method for preparing the additive for plating silver on the wafer according to claim 1, wherein: the mass ratio of the dimethyl hydantoin to the polyethylene glycol is 10-30%: 3-5% and adding the balance of pure water according to the proportion.
6. The low temperature silver plating additive according to claim 1, wherein: the low-temperature silver plating additive can be used for normal electroplating at 10-30 ℃.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN202011472019.8A CN112593263A (en) | 2020-12-14 | 2020-12-14 | Preparation method of silver plating additive on wafer |
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| CN202011472019.8A CN112593263A (en) | 2020-12-14 | 2020-12-14 | Preparation method of silver plating additive on wafer |
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| CN112593263A true CN112593263A (en) | 2021-04-02 |
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Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1126250A (en) * | 1994-10-04 | 1996-07-10 | 日本电镀工程股份有限公司 | Silver plating bath and silver plating method using same |
| US20050183961A1 (en) * | 2004-02-24 | 2005-08-25 | Morrissey Ronald J. | Non-cyanide silver plating bath composition |
| KR100773272B1 (en) * | 2006-09-22 | 2007-11-09 | 와이엠티 주식회사 | Silver plating solution including heavy metal ion to improve solderability for smt and printed circuit board produced therefrom |
| CN105463454A (en) * | 2015-11-30 | 2016-04-06 | 苏州市金星工艺镀饰有限公司 | Ceramic surface multi-layer composite coating film and preparing method thereof |
| CN105463524A (en) * | 2015-12-23 | 2016-04-06 | 苏州市金星工艺镀饰有限公司 | Electroplating method of cyanide-free silver electroplating liquid |
| CN107313084A (en) * | 2017-08-10 | 2017-11-03 | 佛山市南博旺环保科技有限公司 | A kind of alkaline non-cyanide plate silver plating solution and silver-coating method |
| CN112981482A (en) * | 2021-02-02 | 2021-06-18 | 无锡华友微电子有限公司 | Method for electroplating conductive material on semiconductor wafer |
-
2020
- 2020-12-14 CN CN202011472019.8A patent/CN112593263A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1126250A (en) * | 1994-10-04 | 1996-07-10 | 日本电镀工程股份有限公司 | Silver plating bath and silver plating method using same |
| US20050183961A1 (en) * | 2004-02-24 | 2005-08-25 | Morrissey Ronald J. | Non-cyanide silver plating bath composition |
| KR100773272B1 (en) * | 2006-09-22 | 2007-11-09 | 와이엠티 주식회사 | Silver plating solution including heavy metal ion to improve solderability for smt and printed circuit board produced therefrom |
| CN105463454A (en) * | 2015-11-30 | 2016-04-06 | 苏州市金星工艺镀饰有限公司 | Ceramic surface multi-layer composite coating film and preparing method thereof |
| CN105463524A (en) * | 2015-12-23 | 2016-04-06 | 苏州市金星工艺镀饰有限公司 | Electroplating method of cyanide-free silver electroplating liquid |
| CN107313084A (en) * | 2017-08-10 | 2017-11-03 | 佛山市南博旺环保科技有限公司 | A kind of alkaline non-cyanide plate silver plating solution and silver-coating method |
| CN112981482A (en) * | 2021-02-02 | 2021-06-18 | 无锡华友微电子有限公司 | Method for electroplating conductive material on semiconductor wafer |
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