CN112588060A - Novel hydride vapor phase epitaxy tail gas treatment device and method - Google Patents
Novel hydride vapor phase epitaxy tail gas treatment device and method Download PDFInfo
- Publication number
- CN112588060A CN112588060A CN202011347780.9A CN202011347780A CN112588060A CN 112588060 A CN112588060 A CN 112588060A CN 202011347780 A CN202011347780 A CN 202011347780A CN 112588060 A CN112588060 A CN 112588060A
- Authority
- CN
- China
- Prior art keywords
- gas treatment
- tail gas
- treatment device
- phase epitaxy
- pipeline
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D50/00—Combinations of methods or devices for separating particles from gases or vapours
- B01D50/20—Combinations of devices covered by groups B01D45/00 and B01D46/00
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/301—AIII BV compounds, where A is Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C23C16/303—Nitrides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4408—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber by purging residual gases from the reaction chamber or gas lines
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The present disclosure provides a novel hydride vapor phase epitaxy tail gas treatment apparatus and method, comprising: the reaction cavity is connected with a tail gas treatment pipeline; a transition area, a primary deposition area and a secondary deposition area are sequentially arranged in the tail gas treatment pipeline, an outlet pipeline of the tail gas treatment pipeline is connected with one end of a vacuum pump, and the other end of the vacuum pump is connected with a tail gas treatment device; the problem of introduce water and other impurity in hydride vapour phase epitaxy equipment to influence the quality of GaN substrate material is solved, structural design is simple, and the clearance is effectual, and equipment running cost is low, can in time clear away and remain the deposit, guarantees that the pipeline is not blockked up, and NH4C dust and waste gas in the furthest gets rid of the pipeline make the high-efficient circulation operation of system, improve equipment's utilization ratio, the maintenance cycle of extension equipment.
Description
Technical Field
The disclosure belongs to the technical field of hydride vapor phase epitaxy equipment, and particularly relates to a device and a method for filtering NH4Cl dust in tail gas in a pipeline when a GaN substrate material is grown by a hydride vapor phase epitaxy technology.
Background
In recent years, a method for growing a gallium nitride substrate by using a hydride vapor phase epitaxy technology is widely applied to the development of a gallium nitride free-standing substrate. However, when a GaN substrate material is grown by using a hydride vapor phase epitaxy technique, additional reactions occur, and in order to increase the growth rate of GaN during the actual preparation process, excess HCl and NH3 are generally introduced, so that HCl remained or generated by the reaction reacts with NH3 to generate some NH4Cl, and the chemical reaction formula is as follows:
HCl+NH3＝NH4Cl
when the temperature is reduced to be below 337.8 ℃, NH4Cl is changed into white solid, so that powder is mixed in the gas and then the gas is deposited inside the cavity and the pipeline; in addition, the solid NH4Cl is decomposed into HCl and NH3 by heating, and the chemical reaction formula is as follows:
due to the formation of NH4Cl by-product, the tail gas contains a large amount of NH4Cl powder, which blocks subsequent pipelines and must be kept away from the growth area and gas path system. However, the production of NH4Cl is unavoidable. Because the reaction zone and the growth zone of the vertical HVPE system are far away from the deposition zone, the temperature in the reaction chamber is reduced to be below 337.8 ℃ when the mixed gas does not reach the deposition zone, at the moment, white solid is generated and is deposited in the pipeline, the equipment can be damaged, a tail gas outlet can be blocked, the reaction chamber is exploded due to overlarge pressure, NH4Cl dust remained in the reaction chamber can enter the vacuum pump in the air exhaust process, certain corrosion is caused to a pump body, and the pumping speed of the vacuum pump is reduced; and NH4Cl dust is easy to absorb moisture, which can cause excessive water vapor to be introduced into the reaction chamber, thereby affecting the growth quality of GaN.
A method of treating the off-gas dust with water or a solution containing other substances is currently commonly used, but this method introduces water and other impurities in the hydride vapor phase epitaxy apparatus, thereby affecting the quality of the GaN substrate material, and obviously this method is not desirable and suitable for off-gas treatment of hydride vapor phase epitaxy. A device capable of better treating hydride vapor phase epitaxy tail gas is not ubiquitous up to now.
Disclosure of Invention
In order to solve the above technical problems, the present disclosure provides a tail gas treatment device for preparing GaN substrate material by hydride vapor phase epitaxy technology, so as to reduce or even eliminate tail gas exhaust and NH generated in the process of growing GaN by hydride vapor phase epitaxy4Cl dust.
In a first aspect, the present disclosure provides a novel hydride vapor phase epitaxy tail gas treatment device, including: the reaction cavity is connected with a tail gas treatment pipeline; the tail gas treatment pipeline is internally provided with a transition area, a primary deposition area and a secondary deposition area in sequence, an outlet pipeline of the tail gas treatment pipeline is connected with one end of a vacuum pump, and the other end of the vacuum pump is connected with a tail gas treatment device.
In a second aspect, the present disclosure also provides a use method of the novel hydride vapor phase epitaxy tail gas treatment device, including:
preparing mixed gas after reaction of the GaN substrate material, and introducing the mixed gas into a tail gas treatment pipeline from the outlet end of the reaction cavity under the action of a vacuum pump;
the mixed gas enters a transition zone, is heated by a heater and then enters a primary deposition zone;
the primary cooling device of the primary settling zone cools the mixed gas and passes through a large-aperture filterBy the action of (2), NH4The Cl solid is mainly deposited in the first-stage deposition area, and the rest mixed gas enters the second-stage deposition area;
the rest mixed gas passes through a secondary cooling device, is cooled again, and is condensed to generate fine NH4Depositing Cl dust in a secondary deposition area under the action of an air filter, and feeding the residual mixed gas into a vacuum pump;
and the rest mixed gas enters an exhaust gas treatment device through a vacuum pump.
Compared with the prior art, this disclosure possesses following beneficial effect:
1. the utility model discloses a novel thing vapour phase epitaxy tail gas processing apparatus, be equipped with transition zone in proper order in adopting the tail gas treatment pipeline, one-level deposition zone and second grade deposition zone, the outlet pipeline of tail gas treatment pipeline is connected with the one end of vacuum pump, the vacuum pump other end is connected with tail gas treatment device, introduce water and other impurity in hydride vapour phase epitaxy equipment has been solved, thereby influence the quality problems of gaN substrate material, the structural design is simple, it is effectual to clear up, equipment running cost is low, can in time clear away remaining deposit, guarantee that the pipeline is not blockked up, furthest gets rid of the NH in the pipeline4And C, dust and waste gas enable the system to operate in a circulating mode with high efficiency, the utilization rate of equipment is improved, and the maintenance period of the equipment is prolonged.
2. This is disclosed to adopt mist to get into the transition district, gets into the one-level deposit district after the heater heating, has avoided the reaction intracavity temperature when mist has not arrived the deposit district, just has fallen to 337.8 ℃ below, will generate white solid this moment, and then deposit inside the pipeline, not only can damage equipment, still can block up the tail gas export, cause the reaction chamber because of the too big explosion problem of pressure.
Advantages of additional aspects of the disclosure will be set forth in part in the description which follows, and in part will be obvious from the description, or may be learned by practice of the disclosure.
Drawings
The accompanying drawings, which are incorporated in and constitute a part of this application, illustrate embodiments of the application and, together with the description, serve to explain the application and are not intended to limit the application.
FIG. 1 is a schematic structural diagram of a novel hydride vapor phase epitaxy tail gas treatment device disclosed in the present disclosure;
in the figure: 1: a reaction chamber; 2: a transition zone; 3: a heater; 4: a primary deposition zone; 5: a cooling device; 6: a large-aperture ammonium chloride filter; 7: a secondary deposition zone; 8: an air filter; 9: a vacuum pump; 10: an exhaust gas treatment device.
The specific implementation mode is as follows:
the present disclosure is further described with reference to the following drawings and examples.
It should be noted that the following detailed description is exemplary and is intended to provide further explanation of the disclosure. Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs.
It is noted that the terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of example embodiments according to the present application. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, and it should be understood that when the terms "comprises" and/or "comprising" are used in this specification, they specify the presence of stated features, steps, operations, devices, components, and/or combinations thereof, unless the context clearly indicates otherwise.
Example 1
As shown in fig. 1, the present disclosure provides a novel hydride vapor phase epitaxy tail gas treatment device, comprising: the reaction cavity is connected with a tail gas treatment pipeline; the tail gas treatment pipeline is internally provided with a transition area, a primary deposition area and a secondary deposition area in sequence, an outlet pipeline of the tail gas treatment pipeline is connected with one end of a vacuum pump, and the other end of the vacuum pump is connected with a tail gas treatment device.
Further, a heater is arranged in the transition area. The heater may be an electromagnetic heater, an infrared heater, or a resistance heater.
Furthermore, a primary cooling device is arranged in the primary deposition area, an outlet of the primary deposition area is connected with a large-aperture filter, and gas filtered by the large-aperture filter enters the secondary deposition area.
Furthermore, a secondary cooling device is arranged in the secondary deposition area, an outlet of the secondary deposition area is connected with an air filter, gas filtered by the air filter enters a vacuum pump, and the gas enters the waste gas treatment device under the action of the vacuum pump. The waste treatment device adopts a water washing type waste gas treatment device. The cooling device can adopt an air-cooled cooler, a plate cooler, a tube cooler, a dividing wall cooler, a spray cooler, a jacketed cooler or a coil cooler.
Furthermore, the reaction cavity is a GaN reaction cavity, the GaN reaction cavity is connected to the transition region through a pipeline, and a heater is arranged in the transition region and used for drying steam mixed in tail gas in the pipeline.
Furthermore, the primary settling zone and the cooling device are matched with a large-aperture ammonium chloride filter to be mainly used for depositing solid NH4Cl; the secondary deposition area and the cooling device are matched with an air filter to be mainly used for depositing secondary fine NH4Cl dust.
Furthermore, the tail end of the tail gas treatment device adopts a vacuum pump which is connected with an outlet pipeline in front, so that the mixed gas can be pumped by the vacuum pump to pass through the whole system; then connected with a waste gas treatment device, and the waste gas is introduced into the circulating water for purification treatment.
Example 2
The disclosure also provides a use method of the novel hydride vapor phase epitaxy tail gas treatment device, which is used for removing NH in the pipeline after the reaction of the hydride vapor phase epitaxy growth GaN substrate4Cl dust and off-gas, including:
preparing mixed gas after reaction of the GaN substrate material, and introducing the mixed gas into a tail gas treatment pipeline from the outlet end of the reaction cavity under the action of a vacuum pump;
the mixed gas enters a transition zone, is heated by a heater and then enters a primary deposition zone;
the primary cooling device of the primary settling zone cools the mixed gas and NH is carried out under the action of the large-aperture filter4The Cl solid is mainly deposited in the first-stage deposition area, and the rest mixed gas enters the second-stage deposition area;
the rest mixed gas passes through a secondary cooling device, is cooled again, and is condensed to generate fine NH4Depositing Cl dust in a secondary deposition area under the action of an air filter, and feeding the residual mixed gas into a vacuum pump;
and the rest mixed gas enters an exhaust gas treatment device through a vacuum pump.
Specifically, the mixed gas after the reaction of the prepared GaN substrate material enters the tail gas treatment pipeline from the outlet end of the reaction cavity under the action of a vacuum pump.
Firstly, mixed tail gas enters a transition zone, a heater is started to heat, the temperature of the heater is adjustable within 50-400 ℃, and the temperature of the tail end in the transition zone is slightly higher than 400 ℃;
then, the tail gas passes through a primary cooling device to cool the mixed gas, and the NH condensed after cooling4The Cl solid is mainly deposited in a primary deposition area under the action of a large-aperture filter;
secondly, the tail gas passes through a secondary cooling device, is cooled again, and is condensed to generate fine NH4Cl dust is deposited in a secondary deposition area under the action of an air filter (a small-aperture filter screen);
then, the residual waste gas passes through an air filter and enters a waste gas treatment device through a vacuum pump;
finally, after waiting for 10-20 min, continuing to dry for about 10min, and introducing N into the tail gas treatment device2And blowing for 5-10 min to perform the next growth tail gas treatment operation.
In other embodiments, the present disclosure further provides the steps of purging the NH4Cl solids and off-gas in the conduit as follows:
firstly, mixed gas enters a transition zone through a reaction cavity and a transition zone connecting pipeline, a heater is started to heat the mixed gas, the temperature of the heater is set to be 400 ℃, and the temperature of the tail end inside the transition zone is slightly higher than 400 ℃; then, the mixed gas enters a primary deposition area, is cooled by a cooling device and is condensed into NH4Cl solid, and when the mixed gas passes through a large-aperture filter, the NH4Cl solid is blocked, so that the mixed gas is deposited in the primary deposition area; then, the mixed gas enters a secondary deposition area, the temperature of the mixed gas is reduced by a cooling device again, fine NH4Cl dust is generated, and NH4Cl dust is deposited in the secondary deposition area when the mixed gas passes through an air filter (a small-aperture filter screen); then, the residual mixed gas enters a water washing type waste gas treatment device under the action of a vacuum pump, and a circulating water system is utilized to carry out multiple times of water washing to purify and treat waste gas; and finally, after waiting for 10-20 min, continuing drying for about 10min, and then introducing N2 into the tail gas treatment device to blow for 5-10 min, so that the next tail gas treatment operation can be carried out.
The result shows that by using the device for removing the mixed gas sediment in the pipeline after the reaction of growing the GaN substrate by the hydride vapor phase epitaxy technology, NH4Cl solid and dust are deposited in the primary and secondary deposition areas, the waste gas is well absorbed by the water washing device, and the pipeline is clean as before after being purged by N2.
Although the present disclosure has been described with reference to specific embodiments, it should be understood that the scope of the present disclosure is not limited thereto, and those skilled in the art will appreciate that various modifications and changes can be made without departing from the spirit and scope of the present disclosure.
Claims (10)
1. A novel hydride vapor phase epitaxy tail gas treatment device is characterized by comprising: the reaction cavity is connected with a tail gas treatment pipeline; the tail gas treatment pipeline is internally provided with a transition area, a primary deposition area and a secondary deposition area in sequence, an outlet pipeline of the tail gas treatment pipeline is connected with one end of a vacuum pump, and the other end of the vacuum pump is connected with a tail gas treatment device.
2. A novel hydride vapor phase epitaxy tail gas treatment device as claimed in claim 1, wherein a heater is installed in the transition zone.
3. A novel hydride vapor phase epitaxy tail gas treatment device as claimed in claim 1, wherein a secondary cooling device is arranged in the secondary deposition area, an outlet of the secondary deposition area is connected with an air filter, the gas filtered by the air filter enters a vacuum pump, and the gas enters the waste gas treatment device under the action of the vacuum pump.
4. A novel hydride vapor phase epitaxy tail gas treatment device as claimed in claim 1, wherein the reaction chamber is a GaN reaction chamber, the GaN reaction chamber is connected to the transition zone through a pipeline, and a heater is arranged in the transition zone.
5. A novel hydride vapor phase epitaxy tail gas treatment device as claimed in claim 1, wherein the primary precipitation zone and the cooling device are used in combination with a large-aperture ammonium chloride filter mainly for depositing solid NH4 Cl.
6. A novel hydride vapor phase epitaxy tail gas treatment device as claimed in claim 1, wherein the tail gas treatment device is connected with an outlet pipeline in front of a vacuum pump, so that the mixed gas is pumped through the whole system by the vacuum pump.
7. A novel hydride vapor phase epitaxy tail gas treatment device as claimed in claim 1, wherein the waste treatment device is a water washing type waste gas treatment device.
8. A novel hydride vapor phase epitaxy exhaust gas treatment device as claimed in claim 1, wherein the secondary deposition zone and cooling device are used in combination with an air filter primarily for deposition of secondary fine NH4Cl dust.
9. The use method of the novel hydride vapor phase epitaxy tail gas treatment device is characterized by comprising the following steps:
preparing mixed gas after reaction of the GaN substrate material, and introducing the mixed gas into a tail gas treatment pipeline from the outlet end of the reaction cavity under the action of a vacuum pump;
the mixed gas enters a transition zone, is heated by a heater and then enters a primary deposition zone;
the primary cooling device of the primary settling zone cools the mixed gas and NH is carried out under the action of the large-aperture filter4The Cl solid is mainly deposited in the first-stage deposition area, and the rest mixed gas enters the second-stage deposition area;
the rest mixed gas passes through a secondary cooling device, is cooled again, and is condensed to generate fine NH4Depositing Cl dust in a secondary deposition area under the action of an air filter, and feeding the residual mixed gas into a vacuum pump;
and the rest mixed gas enters an exhaust gas treatment device through a vacuum pump.
10. The method for using a novel hydride vapor phase epitaxy tail gas treatment device according to claim 9, wherein after the waste treatment device treats the waste for 10 to 20min, the waste treatment is stopped and dried for about 10min, and N is introduced into the tail gas treatment device2And blowing for 5-10 min to perform the next growth tail gas treatment operation.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011347780.9A CN112588060A (en) | 2020-11-26 | 2020-11-26 | Novel hydride vapor phase epitaxy tail gas treatment device and method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011347780.9A CN112588060A (en) | 2020-11-26 | 2020-11-26 | Novel hydride vapor phase epitaxy tail gas treatment device and method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN112588060A true CN112588060A (en) | 2021-04-02 |
Family
ID=75184213
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202011347780.9A Pending CN112588060A (en) | 2020-11-26 | 2020-11-26 | Novel hydride vapor phase epitaxy tail gas treatment device and method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN112588060A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114351119A (en) * | 2021-12-14 | 2022-04-15 | 泰州隆基乐叶光伏科技有限公司 | Exhaust system of deposition reaction chamber and film deposition equipment |
| WO2023170017A2 (en) | 2022-03-09 | 2023-09-14 | Aixtron Se | Cvd apparatus and method of cleaning a process chamber of a cvd apparatus |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102172458A (en) * | 2010-12-31 | 2011-09-07 | 东莞市中镓半导体科技有限公司 | Method and equipment for processing tail gas containing ammonium chloride |
| WO2014128045A1 (en) * | 2013-02-21 | 2014-08-28 | Aixtron Se | Cvd device and method for cleaning a processing chamber of a cvd device |
| CN106367733A (en) * | 2015-07-24 | 2017-02-01 | 东莞市中镓半导体科技有限公司 | Apparatus and method for removing tail gas deposits in HVPE device pipeline |
| CN109423620A (en) * | 2017-08-30 | 2019-03-05 | 映瑞光电科技(上海)有限公司 | A kind of tail pipe cooling equipment of MOCVD device |
| CN210261974U (en) * | 2019-06-27 | 2020-04-07 | 张家港恩达通讯科技有限公司 | Exhaust system of metal organic chemical vapor deposition equipment |
-
2020
- 2020-11-26 CN CN202011347780.9A patent/CN112588060A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102172458A (en) * | 2010-12-31 | 2011-09-07 | 东莞市中镓半导体科技有限公司 | Method and equipment for processing tail gas containing ammonium chloride |
| WO2014128045A1 (en) * | 2013-02-21 | 2014-08-28 | Aixtron Se | Cvd device and method for cleaning a processing chamber of a cvd device |
| CN106367733A (en) * | 2015-07-24 | 2017-02-01 | 东莞市中镓半导体科技有限公司 | Apparatus and method for removing tail gas deposits in HVPE device pipeline |
| CN109423620A (en) * | 2017-08-30 | 2019-03-05 | 映瑞光电科技(上海)有限公司 | A kind of tail pipe cooling equipment of MOCVD device |
| CN210261974U (en) * | 2019-06-27 | 2020-04-07 | 张家港恩达通讯科技有限公司 | Exhaust system of metal organic chemical vapor deposition equipment |
Non-Patent Citations (1)
| Title |
|---|
| 王超: "大尺寸氢化物气相外延（HVPE）设备控制系统的研究与应用", 《中国优秀硕士学位论文全文数据库信息科技辑》 * |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114351119A (en) * | 2021-12-14 | 2022-04-15 | 泰州隆基乐叶光伏科技有限公司 | Exhaust system of deposition reaction chamber and film deposition equipment |
| WO2023170017A2 (en) | 2022-03-09 | 2023-09-14 | Aixtron Se | Cvd apparatus and method of cleaning a process chamber of a cvd apparatus |
| DE102022105526A1 (en) | 2022-03-09 | 2023-09-14 | Aixtron Se | CVD device and method for cleaning a process chamber of a CVD device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN112588060A (en) | Novel hydride vapor phase epitaxy tail gas treatment device and method | |
| RU2540644C2 (en) | Method and device to produce super pure silicon | |
| CN106753343A (en) | The method and quantum dot of remaining cation presoma in a kind of effective removal quantum dot | |
| CN107464857A (en) | A kind of coating process method of reduction PERC cell pieces decay | |
| Feng et al. | One-step preparation of an antibacterial chitin/Zn composite from shrimp shells using urea-Zn (OAc) 2· 2H 2 O aqueous solution | |
| DE69701109T2 (en) | Process for cleaning organometallic compounds | |
| CN104071793B (en) | The recovery method of polysilicon cold hydrogenation solid slag charge slurry | |
| CN113511988A (en) | System and method for preparing dicyandiamide by using urea | |
| CN103597583B (en) | The cleaning method of semiconductor manufacturing apparatus member, the rinser of semiconductor manufacturing apparatus member and epitaxially growing equipment | |
| CN109647160A (en) | Method for treating tail gas of ammonium sulfate mother liquor circulation tank | |
| CN106430216A (en) | Chlorosilane waste liquid treatment method | |
| CN203451325U (en) | High-ammonia-and-nitrogen wastewater treating and ammonia water recycling device | |
| CN105272839A (en) | Synthesis method of diphenyl ketone | |
| CN205821448U (en) | A kind of cleaning systems for MOCVD reative cell | |
| CN211800687U (en) | Stabilize device of organosilicon hydrolysate pyrolysis kettle operation | |
| FR2499426A1 (en) | METHOD AND DEVICE FOR THE RECOVERY OF AMINES FROM EXHAUST-CONTAINING AIR | |
| JP2001038368A (en) | Treatment of water containing fluorine | |
| CN104445476B (en) | Ethyl alcohol biogas slurry deamination technology and equipment | |
| CN109455862A (en) | The processing method of ammonia nitrogen waste water | |
| CN219744773U (en) | Device for preparing phosphorus-containing ligand | |
| CN111618044A (en) | Cleaning method and cleaning device for laser graphite tray | |
| WO2019092314A1 (en) | Method for separating nitrogen from biomass | |
| CN115488139B (en) | Raw material pretreatment system and method for desulfurizing waste liquid and firing acid by crude salt incineration | |
| CN220531190U (en) | Tail gas treatment device for chemical vapor deposition furnace | |
| CN211781145U (en) | Solve RTO organic waste gas treatment facility that ammonia chloride generated |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20210402 |
|
| RJ01 | Rejection of invention patent application after publication |