CN112563690B - Encoding terahertz phase shifter and design method - Google Patents
Encoding terahertz phase shifter and design method Download PDFInfo
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- CN112563690B CN112563690B CN202011295115.XA CN202011295115A CN112563690B CN 112563690 B CN112563690 B CN 112563690B CN 202011295115 A CN202011295115 A CN 202011295115A CN 112563690 B CN112563690 B CN 112563690B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/18—Phase-shifters
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/18—Phase-shifters
- H01P1/182—Waveguide phase-shifters
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P11/00—Apparatus or processes specially adapted for manufacturing waveguides or resonators, lines, or other devices of the waveguide type
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Abstract
The invention discloses various encodable terahertz phase shifters and design methods thereof, which can realize the change of phase change amplitude of the phase shifters through an encoding circuit. The device comprises an electromagnetic band gap metal waveguide cavity, a chip and a control circuit. Firstly, determining the frequency range of a phase shifter and designing the size of an air cavity; then carrying out parameter design on the periodic rectangular metal column; digging a waveguide short-circuit load with the height h _ stub, the length l _ stub and the width w _ stub above the air cavity; the chip is placed at the load, the silicon substrate is embedded at two sides of the load, and the shutter covers the silicon substrate and extends to cover the waveguide short-circuit load; leading out a direct current lead from the gap of the periodic metal column and connecting the direct current lead to a bonding pad at the boundary of the chip; the direct current lead is connected to pins on the PCB, and the switching of the on and off of each louver of the terahertz phase shifter is realized by controlling the feeding signals added to each pin, so that the phase change amplitude is changed.
Description
Technical Field
The invention relates to the technical field of terahertz phase shifter design, in particular to a codeable terahertz phase shifter and a design method thereof.
Background
Terahertz (THz) science and technology has become a leading-edge subject with important influence on modern science and technology, national economy and national defense construction. The THz frequency band has wide application in medical diagnosis, radar, radio astronomy, imaging systems, spectrum analysis and high-bandwidth wireless communication. Although THz waves have high scientific research and engineering values, the THz band is one of the least efficient regions in the electromagnetic spectrum, mainly due to the lack of commercial terahertz wave components and the lack of effective equivalent circuit methods for characterizing the components in the terahertz band. Because of the inherent advantages of high frequency and large bandwidth of THz waves, the THz radar has high spatial resolution and distance resolution, so that the THz radar has great scientific value and wide application prospect in the fields of object imaging, environment monitoring, security inspection, anti-terrorism detection, biomedicine, particularly satellite communication, imaging radar and the like. The phased array radar has the advantages of more flexible wave scanning, capability of tracking more targets, better anti-interference performance and the like. As a key component of the phased array, the cost and the performance of the phase shifter directly influence the manufacturing cost and the performance of the phased array radar system. Therefore, the research on the THz phase shifter with high performance, easy realization and low cost has very important practical significance for improving the performance and the structure of the phased array and realizing the THz phased array radar with small size and low power consumption.
At present, the phase shifter components of L, S, C, X, Ku, Ka and W wave bands of electromagnetic waves are relatively well researched. Phase shifters in the microwave range are typically implemented on the basis of ferrite materials, PIN diodes or field effect transistor switch arrays. In contrast, ferrite phase shifters have better performance, but are expensive to manufacture, bulky, and not easily integrated; the problems of high loss, poor linearity and the like of the semiconductor switch phase shifter limit the development of the phase shifter to higher frequency and more excellent performance.
Therefore, a design scheme capable of improving the performance of the phase shifter is needed, so that the phase shifter has higher frequency and more excellent performance in the terahertz spectrum segment, and the change of the phase change amplitude of the phase shifter is realized.
Disclosure of Invention
In view of this, the present invention provides a programmable terahertz phase shifter device and a design method thereof, which can change the phase change amplitude of a phase shifter within a terahertz spectrum segment through an encoding circuit, thereby improving the performance of the phase shifter.
In order to achieve the purpose, the technical scheme of the invention is as follows:
the invention provides a codeable terahertz phase shifter, which comprises: the electromagnetic band gap metal waveguide comprises an electromagnetic band gap metal waveguide cavity, a chip and a control circuit.
The electromagnetic band gap metal waveguide cavity comprises an air cavity, a lower metal plate, periodic metal columns and an upper metal plate.
The chip comprises a silicon substrate and a shutter; the shutter is a shutter type structure composed of metal strips.
The control circuit is used for controlling the shutter.
The upper metal plate is positioned above the air cavity, the lower metal plate is positioned below the air cavity, and the periodic metal columns are positioned on two sides of the air cavity; a groove is arranged on the metal plate above the air cavity and is used as a waveguide short-circuit load; the silicon substrate in the chip is embedded on two sides of the waveguide short-circuit load above the air cavity, and the shutter covers the silicon substrate and extends to cover the waveguide short-circuit load.
Further, each metal strip in the louver is composed of an Al layer, a resistance wire layer and Al2O3A three-layer material, wherein Al layer is on the outer surface, Al2O3The layer is on the inner surface and the resistance wire layer is in the middle.
Furthermore, the control circuit is printed on a PCB (printed circuit board), the PCB is fixed on two sides of the chip, and the resistance wire of the shutter is connected to the control circuit through a direct current lead printed on the silicon substrate.
Furthermore, the electromagnetic band gap metal waveguide cavity is made of aluminum, and the direct current lead is made of copper.
Further, the PCB is made of FR-4.
Furthermore, the periodic metal columns are a structure formed by arranging a plurality of metal columns at fixed intervals.
The invention provides a design method of a codeable terahertz phase shifter, which is designed aiming at any one codeable terahertz phase shifter and comprises the following steps:
step one, determining the width a and the height b of the air cavity according to a working frequency range required by the terahertz phase shifter, and referring to a standard waveguide size table; the length is determined according to specific requirements;
and step two, keeping the height h of the periodic metal columns consistent with the height b of the air cavity, and setting the side length a1 of the square on the bottom surface of the periodic metal columns and the period p of the periodic metal columns so that the electromagnetic waves transmitted in the air cavity cannot leak out from the gaps between the periodic metal columns on the two sides.
Digging a waveguide short-circuit load with the height h _ stub, the length l _ stub and the width w _ stub on a metal plate above the electromagnetic band gap metal waveguide cavity; the length l _ stub is consistent with the width a of the air cavity, and the number of loads is determined by the required phase-shifting coverage range.
And step four, placing the chip at the waveguide short-circuit load, embedding the silicon substrate at two sides of the waveguide short-circuit load, and covering the upper shutter to the junction of the air cavity and the waveguide short-circuit load.
Step five, leading out the direct current lead from the shutter and connecting the direct current lead to a bonding pad on the boundary of the chip; wherein, the direct current lead is led out from the gap of the periodic metal cylinder; the direct current lead is connected to pins on the PCB, the control circuit is printed on the PCB, and the control circuit controls the pins to be fed with feed signals to switch the on and off states of the shutters of the terahertz phase shifter.
Further, the specific method that the number of loads is determined by the required phase shift coverage range is as follows:
a single waveguide short circuit load brings 20 degrees of additional phase to the electromagnetic wave.
Has the advantages that:
1. the invention provides a codeable terahertz phase shifter device and a design method thereof, which solve the problem of overlarge transmission loss of the conventional phase shifter by using a metal waveguide structure and realize transmission phase change and design of a code control phase shifter by integrating an electromagnetic band gap metal waveguide cavity and a chip. The invention realizes the electromagnetic wave transmission phase coding control without increasing the electromagnetic wave transmission loss, and has the advantages of low-loss transmission and real-time transmission phase control. The electromagnetic band gap metal waveguide structure changes the traditional waveguide metal closed side wall into a metal cylinder structure with periodic intervals, provides a path for communicating a direct current lead from the inside to the outside of the waveguide on the premise of not influencing electromagnetic wave transmission, and overcomes the problem that a chip in the waveguide cannot be controlled by an external circuit.
2. The metal plate above the air cavity is provided with a short-circuit waveguide load (hereinafter referred to as a load) with a certain width and height, and the presence of the load can enable an electric field of electromagnetic waves propagating in the air cavity to enter the air cavity in the load and reflect the electric field into the air cavity when the electric field passes through the load, so that the transmission phase of the transmitted electromagnetic waves is increased. Furthermore, the invention realizes whether each load works or not by adding a plurality of loads (four loads are selected in the example) in the waveguide cavity and controlling the on and off states of the chip, and in the example, the working phase of 20 degrees is additionally added for transmitting electromagnetic waves when a single load works, so that a plurality of load modules work simultaneously by using the working modes of each metal strip of the chip, and a wider phase coverage range is realized.
Drawings
Fig. 1 is a diagram of an electromagnetic bandgap metal waveguide structure.
Fig. 2 is a schematic diagram of a structure of loading a short circuit load on an electromagnetic bandgap metal waveguide.
Fig. 3 is a combination diagram of a chip and waveguide short circuit load.
Fig. 4 is a schematic diagram of the principle of controlling the short-circuit load by the chip.
FIG. 5 is a schematic plan view of the connection between the chip and the DC leads of the PCB control circuit.
Detailed Description
The invention is described in detail below by way of example with reference to the accompanying drawings.
The invention provides a codeable terahertz phase shifter, which comprises the following specific components:
the electromagnetic band gap metal waveguide comprises an electromagnetic band gap metal waveguide cavity, a chip and a control circuit.
The electromagnetic band gap metal waveguide cavity provided by the embodiment of the invention is composed of an air cavity for transmitting electromagnetic waves, upper and lower metal plates positioned on the upper and lower sides of the air cavity, and periodic metal cylinders positioned on the left and right sides for preventing electromagnetic waves from leaking and providing wiring space for a direct current circuit, as shown in fig. 1. The electromagnetic band gap metal waveguide structure is made of metal aluminum, and the air cavity is made of air.
The chip comprises a silicon substrate and an electrically controllable shutter type metal strip; the shutter is a shutter type structure composed of metal strips; the control circuit is used for controlling the shutter.
The upper metal plate is positioned above the air cavity, the lower metal plate is positioned below the air cavity, and the periodic metal columns are positioned on two sides of the air cavity; a groove is arranged on the metal plate above the air cavity and is used as a waveguide short-circuit load; and the silicon substrate in the chip is embedded at two sides of the waveguide short-circuit load above the air cavity, and the shutter covers the silicon substrate and extends to cover the waveguide short-circuit load.
In one embodiment of the invention, the periodic metal columns are a structure in which a plurality of metal columns are arranged at fixed intervals.
In one embodiment of the invention, each metal strip in the louver is composed of an Al layer, a resistance wire layer and Al2O3A three-layer material, wherein Al layer is on the outer surface, Al2O3The layer is on the inner surface and the resistance wire layer is in the middle.
In one embodiment of the invention, the control circuit is printed on a PCB board which is fixed on both sides of the chip, and the resistance wires of the louvers are connected to the control circuit through direct current leads printed on the silicon substrate.
In one embodiment of the invention, the material of the electromagnetic bandgap metal waveguide cavity is aluminum and the material of the dc lead is copper.
In one embodiment of the invention, the material of the PCB board is FR-4.
In one embodiment of the invention, the periodic metal columns are a structure in which a plurality of metal columns are arranged at fixed intervals.
The design method of the terahertz phase shifter comprises the following specific steps:
And 2, designing parameters of the periodic rectangular metal column for replacing the side wall of the traditional metal waveguide. The height of the metal pillar needs to be consistent with the height of the metal air cavity, namely h is 0.8 mm. The side length of the metal column and the direct interval between adjacent metal columns are further designed. The side length of the metal column is designed to be 0.55mm at a1, and the period of the metal column is 1.05mm, so that the electromagnetic wave propagating in the cavity cannot leak from two sides, and the final structure of the electromagnetic bandgap metal waveguide is shown in fig. 1.
Step 3, in order to realize the transmission performance with controllable phase change in the electromagnetic band gap metal waveguide, loads with the height h _ stub of 0.35mm, the length l _ stub of 1.651mm, the same width as the width a of the air cavity and the width w _ stub of 0.33mm are dug out on the metal plate above the air cavity, a single load can bring 20 degrees of additional phase for the electromagnetic wave on the premise of not influencing the transmission amplitude, and the transmission phase change of the electromagnetic wave of the structure can cover a larger range by adjusting the position and the number of each load, namely the number of the loads is determined by the required phase-shifting coverage range. To facilitate the explanation of the present terahertz phase shifter structure, 4 loads are used in the embodiment of the present invention, as shown in fig. 2.
And 4, embedding the chips on the surface of the upper metal plate and distributing the chips on two sides of the load, wherein the shutters on the chips cover the junction of the load and the air cavity to be used as switches for controlling the load to work or not, as shown in fig. 3. At normal temperature, the shutter is in an open state; when the resistance wire in the shutter is electrified, the Al and the Al which are positioned on the upper layer and the lower layer of the resistance wire in the shutter due to the resistance heat effect and the resistance wire2O3The materials have different coefficients of thermal expansion, causing the blind to change from the open state to the closed state, as shown in figure 4.
And 5, embedding the control circuit on the upper metal plate, fixing the control circuit by using screws, distributing the control circuit on the outer side of the chip, and connecting the bonding pad on the chip with the bonding pad of the PCB by gold wire bonding. As shown in fig. 5, the distribution diagram of the PCB and the chip and the control circuit above the PCB control the state change of each louver on the chip by turning on and off each direct current lead, thereby implementing the phase coding control of the terahertz phase shifter. It should be noted that a single load can bring 20 degrees of additional phase to the electromagnetic wave, and the method provided by the present invention can change the number of loads to realize a wider phase shift coverage range according to the actual application requirement, for example, in an embodiment of the present invention, a full phase coverage of 360 degrees is finally realized by using 18 loads.
The performance of the terahertz phase shifter finally designed is as follows:
1. the transmission loss of the electromagnetic waves of the terahertz phase shifter is less than 1.5 dB.
2. The phase of the transmitted electromagnetic wave varies in the range of 0 to 80 degrees.
3. The embodiment of the invention overcomes the problem that the chip in the waveguide cannot be controlled by an external circuit by utilizing the electromagnetic band gap metal waveguide structure, and realizes the control of electromagnetic wave transmission phase coding without increasing the transmission loss of electromagnetic waves.
In summary, the above description is only a preferred embodiment of the present invention, and is not intended to limit the scope of the present invention. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (6)
1. A programmable terahertz phase shifter is characterized by comprising: the electromagnetic band gap metal waveguide comprises an electromagnetic band gap metal waveguide cavity, a chip and a control circuit;
the electromagnetic band gap metal waveguide cavity comprises an air cavity, a lower metal plate, periodic metal columns and an upper metal plate;
the chip comprises a silicon substrate and a shutter; the shutter is of a shutter type structure consisting of metal strips; each metal strip in the louver is composed of an Al layer, a resistance wire layer and Al2O3A three-layer material, wherein the Al layer is on the outer surface，Al2O3The resistance wire layer is arranged on the inner surface and in the middle;
the control circuit is used for controlling the shutter;
the upper metal plate is positioned above the air cavity, the lower metal plate is positioned below the air cavity, and the periodic metal columns are positioned on two sides of the air cavity; a groove is formed in the metal plate above the air cavity and used as a waveguide short-circuit load; a silicon substrate in the chip is embedded on two sides of the waveguide short-circuit load above the air cavity, and the louver covers the silicon substrate and extends to cover the waveguide short-circuit load;
the control circuit is printed on a PCB (printed circuit board), the PCB is fixed on two sides of the chip, and the resistance wire of the shutter is connected to the control circuit through a direct current lead printed on the silicon substrate.
2. The encodable terahertz phase shifter of claim 1, wherein the material of the electromagnetic bandgap metal waveguide cavity is aluminum, and the material of the direct current lead is copper.
3. The encodable terahertz phase shifter of claim 1, wherein the material of the PCB board is FR-4.
4. The encodable terahertz phase shifter of claim 1, wherein the periodic metal posts are a plurality of metal posts arranged at fixed intervals.
5. A design method for a codeable terahertz phase shifter, which is designed for the codeable terahertz phase shifter as claimed in any one of claims 1 to 4, and comprises the following steps:
step one, determining the width a and the height b of the air cavity according to a working frequency range required by the terahertz phase shifter, and referring to a standard waveguide size table; the length is determined according to specific requirements;
step two, keeping the height h of the periodic metal posts consistent with the height b of the air cavity, and setting the side length a1 of a square on the bottom surface of the periodic metal posts and the period p of the periodic metal posts, so that electromagnetic waves transmitted in the air cavity cannot leak out from gaps between the periodic metal posts on two sides;
digging a waveguide short-circuit load with the height h _ stub, the length l _ stub and the width w _ stub on a metal plate above the electromagnetic band gap metal waveguide cavity; the length l _ stub is consistent with the width a of the air cavity, and the number of the loads is determined by the required phase-shifting coverage range;
placing the chip at the waveguide short-circuit load, embedding the silicon substrate at two sides of the waveguide short-circuit load, and covering an upper shutter to the junction of the air cavity and the waveguide short-circuit load;
fifthly, leading out a direct current lead from the louver and connecting the direct current lead to a bonding pad on the boundary of the chip; the direct current lead is led out from the gap of the periodic metal cylinder; and connecting a direct current lead to pins on a PCB, printing the control circuit on the PCB, and switching the on and off states of each louver of the terahertz phase shifter by controlling the feeding signal added to each pin by the control circuit.
6. The design method of the encodable terahertz phase shifter of claim 5, wherein the specific method that the number of the loads is determined by the required phase shift coverage range is as follows:
a single such waveguide short circuit load brings 20 degrees of additional phase to the electromagnetic wave.
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