CN112563149B - Method for accurately measuring drilling size and stripping process - Google Patents
Method for accurately measuring drilling size and stripping process Download PDFInfo
- Publication number
- CN112563149B CN112563149B CN202011453153.3A CN202011453153A CN112563149B CN 112563149 B CN112563149 B CN 112563149B CN 202011453153 A CN202011453153 A CN 202011453153A CN 112563149 B CN112563149 B CN 112563149B
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- Prior art keywords
- size
- clamped
- drill
- photoresist
- accurately measuring
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- 238000000034 method Methods 0.000 title claims abstract description 39
- 238000005553 drilling Methods 0.000 title abstract description 19
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 24
- 238000005259 measurement Methods 0.000 claims abstract description 18
- 239000000758 substrate Substances 0.000 claims abstract description 12
- 230000003287 optical effect Effects 0.000 claims description 4
- 239000003086 colorant Substances 0.000 claims description 2
- 239000002184 metal Substances 0.000 description 3
- 238000001883 metal evaporation Methods 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000013461 design Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Length Measuring Devices By Optical Means (AREA)
- Sampling And Sample Adjustment (AREA)
Abstract
The application relates to a method for accurately measuring the drilling size and a stripping process, which comprises the following steps: s1, providing a substrate, wherein at least one layer of film is formed on the substrate, and photoresist is formed on the top of the uppermost layer of film; s2, arranging a mask on the photoresist, wherein a measurement pattern is formed on the mask, the measurement pattern comprises a plurality of clamped beams arranged at intervals and a developed area arranged between two adjacent clamped beams, and each clamped beam has different widths; and S3, exposing the substrate by using the mask plate, developing, and observing the pattern on the developed photoresist under a microscope to obtain the size of the formed drill. The method for precisely measuring the drilling size and the stripping process can precisely measure the drilling size and avoid measurement errors caused by observation equipment.
Description
Technical Field
The application relates to a method for accurately measuring the drilling size and a stripping process, and belongs to the field of semiconductor device preparation.
Background
In the manufacturing process of semiconductor devices, a double-layer photoresist process of stripping photoresist is generally used for metal evaporation to strip off and form metal patterns. The resist of the lower layer has a larger etching opening than the resist development opening of the upper layer to form a drill (i.e., undercut), which is easy for peeling after metal evaporation. The size of the drill is used for influencing the smear on the edge of the metal evaporation pattern, for example, the smear is long when the drill is large, and the smear is small when the drill is small. In addition, the size of the metal pattern edge smear has different effects on the subsequent process, so the size of the drilling is controlled to control the smear of the metal pattern, thereby being beneficial to maintaining the stability of the whole process. Thus, there is a need to effectively monitor and measure the size of the drill. Currently, there are mainly two schemes to measure the width of the drill.
However, due to the limitation of the depth of field of the microscope, the conventional optical microscope has an inherent measurement error, so that two boundaries of the drilling cannot be clearly observed at the same time, and the size of the drilling cannot be accurately measured.
Disclosure of Invention
The application aims to provide a method and a stripping process for accurately measuring the size of drilling, which can accurately measure the size of drilling and avoid measurement errors caused by observation equipment.
In order to achieve the above purpose, the present application provides the following technical solutions: a method of accurately measuring a drill size, comprising:
s1, providing a substrate, wherein at least one layer of film is formed on the substrate, and photoresist is formed on the top of the uppermost layer of film;
s2, arranging a mask on the photoresist, wherein a measurement pattern is formed on the mask, the measurement pattern comprises a plurality of clamped beams arranged at intervals and a developed area arranged between two adjacent clamped beams, and each clamped beam has different widths;
and S3, exposing the substrate by using the mask plate, developing, and observing the pattern on the developed photoresist under a microscope to obtain the size of the formed drill.
Further, the photoresist is a negative photoresist or a bilayer photoresist.
Further, the plurality of clamped beams are arranged from small to large according to the width of the clamped beams.
Further, the width of the clamped beam is inversely proportional to the length thereof in a range of widths of different clamped beams.
Further, the length of the clamped beam is controlled by setting the length of the developed area.
Further, the measurement pattern includes a reading corresponding to the width of each of the clamped beams.
Further, the clamped beams are sequentially arranged at intervals in the first direction of the mask, and each reading corresponds to each clamped beam and is arranged on one side of each clamped beam.
Further, in step S3, the clamped beam formed with the drill bit and the clamped beam not formed with the drill bit have different colors.
Further, in step S3, the microscope is an optical microscope.
The application also provides a stripping process, which comprises the method for accurately measuring the drilling size.
Compared with the prior art, the application has the beneficial effects that: the method for accurately measuring the drilling size and the stripping process of the application read the drilling size by relating to the measurement pattern, are not limited by the depth of field of a microscope, fundamentally avoid errors generated by equipment measurement and can accurately measure the drilling size.
The foregoing description is only an overview of the present application, and is intended to provide a better understanding of the present application, as it is embodied in the following description, with reference to the preferred embodiments of the present application and the accompanying drawings.
Drawings
FIG. 1 is a layout design of a mask in a method for accurately measuring the size of a drill in accordance with an embodiment of the present application;
fig. 2 is a microscopic view of the exposed photoresist in a method of precisely measuring the size of the drill in accordance with an embodiment of the present application.
Detailed Description
The following describes in further detail the embodiments of the present application with reference to the drawings and examples. The following examples are illustrative of the application and are not intended to limit the scope of the application.
It should be noted that: the terms "upper", "lower", "left", "right", "inner", "outer" and the like in the present application are merely used to describe the present application with reference to the drawings, and are not limiting terms.
The method for accurately measuring the drilling size in the embodiment comprises the following steps:
s1, providing a substrate, wherein at least one layer of film is formed on the substrate, and photoresist is formed on the top of the uppermost layer of film;
s2, arranging a mask on the photoresist, wherein a measurement pattern is formed on the mask, the measurement pattern comprises a plurality of clamped beams arranged at intervals and a developed area arranged between two adjacent clamped beams, and each clamped beam has different widths;
and S3, exposing the substrate by using the mask plate, developing, and observing the pattern on the developed photoresist under a microscope to obtain the size of the formed drill.
Specifically, the photoresist in this embodiment is a negative photoresist, and indeed, in other embodiments, may be a bilayer photoresist. The measurement pattern shown in fig. 1 is designed on the mask plate, the clamped beams 1 are arranged at intervals from small to large according to the width of the clamped beams, and developed areas 2 are arranged between the adjacent clamped beams 1. In this embodiment, the width of the clamped beam 1 is in the range according to the size of the drill to be measured, and the width reading 3 of the clamped beam 1 is marked on the left side. Because the clamped beam 1 with smaller width is easy to fall off and pollute the pattern, the corresponding clamped beam 1 should be designed in equal proportion to avoid falling off and polluting other normal patterns. That is, the width of the clamped beam 1 is inversely proportional to the length thereof in a range of the width of the clamped beam 1, for example, in a range of 0.2 micrometers to 0.6 micrometers, and the length of the clamped beam 1 is less than the length of the clamped beam 1 of 0.8 micrometers to 1.2 micrometers. The proportion of the fixed beam and the fixed beam can be set according to actual needs, and the length of the fixed beam 1 is controlled by the length of the developed area 2.
Referring to fig. 2, when the bottom of the clamped beam is penetrated by the drill, the color of the clamped beam is different from that of the undamped clamped beam when the bottom is observed by an optical microscope after the development is completed, and half of the maximum penetrated clamped beam reading (two drill are formed at the bottom) is read out, namely the current drill size. In this embodiment, the drill size is 1 micron.
In another embodiment of the present application, a stripping process is provided, which includes the method for precisely measuring the size of the drill in the previous embodiment, and other stripping process steps are conventional and are not described in detail herein.
To sum up: the method for accurately measuring the drilling size and the stripping process of the application read the drilling size by relating to the measurement pattern, are not limited by the depth of field of a microscope, fundamentally avoid errors generated by equipment measurement and can accurately measure the drilling size.
The technical features of the above-described embodiments may be arbitrarily combined, and all possible combinations of the technical features in the above-described embodiments are not described for brevity of description, however, as long as there is no contradiction between the combinations of the technical features, they should be considered as the scope of the description.
The above examples illustrate only a few embodiments of the application, which are described in detail and are not to be construed as limiting the scope of the application. It should be noted that it will be apparent to those skilled in the art that several variations and modifications can be made without departing from the spirit of the application, which are all within the scope of the application. Accordingly, the scope of protection of the present application is to be determined by the appended claims.
Claims (10)
1. A method of accurately measuring the size of a drill, comprising:
s1, providing a substrate, wherein at least one layer of film is formed on the substrate, and photoresist is formed on the top of the uppermost layer of film;
s2, arranging a mask on the photoresist, wherein a measurement pattern is formed on the mask, the measurement pattern comprises a plurality of clamped beams arranged at intervals and a developed area arranged between two adjacent clamped beams, and each clamped beam has different widths;
and S3, exposing the substrate by using the mask plate, developing, and observing the pattern on the developed photoresist under a microscope to obtain the size of the formed drill.
2. The method of accurately measuring the size of a drill in accordance with claim 1, wherein the photoresist is a negative photoresist or a bilayer photoresist.
3. The method of accurately measuring the size of a drill hole according to claim 1, wherein a plurality of the clamped beams are arranged from small to large in width.
4. A method of accurately measuring the size of a drill bit as recited in claim 3 wherein the width of the clamped beam is inversely proportional to its length across the width of the clamped beam.
5. The method of accurately measuring the size of a drill according to claim 4, wherein the length of the clamped beam is controlled by setting the length of the developed area.
6. The method of accurately measuring the size of a drill bit of any one of claims 1 to 5, wherein the measurement profile further includes a reading corresponding to the width of each of the clamped beams.
7. The method of claim 6, wherein the clamped beams are sequentially arranged at intervals in the first direction of the mask, and each reading is arranged on one side of the clamped beam corresponding to each clamped beam.
8. The method of claim 1, wherein in step S3, the clamped beams formed with the drill bit and the clamped beams not formed with the drill bit have different colors.
9. The method of claim 1, wherein in step S3, the microscope is an optical microscope.
10. A stripping process comprising a method of accurately measuring the size of a drill as claimed in any one of claims 1 to 9.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011453153.3A CN112563149B (en) | 2020-12-11 | 2020-12-11 | Method for accurately measuring drilling size and stripping process |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011453153.3A CN112563149B (en) | 2020-12-11 | 2020-12-11 | Method for accurately measuring drilling size and stripping process |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN112563149A CN112563149A (en) | 2021-03-26 |
| CN112563149B true CN112563149B (en) | 2023-12-01 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202011453153.3A Active CN112563149B (en) | 2020-12-11 | 2020-12-11 | Method for accurately measuring drilling size and stripping process |
Country Status (1)
| Country | Link |
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| CN (1) | CN112563149B (en) |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE4136089A1 (en) * | 1991-10-30 | 1993-05-06 | Siemens Ag, 8000 Muenchen, De | Crystal orientation determination in wafer having zinc blende structure - performing reflectometry of four angles between edges of etched groove and longer sides of mask opening |
| JP2003287419A (en) * | 2002-03-27 | 2003-10-10 | Toshiba Corp | Pattern-inspection method and apparatus, and mask- manufacturing method |
| US6670612B1 (en) * | 2002-07-01 | 2003-12-30 | Kla-Tencor Technologies Corporation | Undercut measurement using SEM |
| US6791697B1 (en) * | 2002-03-21 | 2004-09-14 | Advanced Micro Devices, Inc. | Scatterometry structure with embedded ring oscillator, and methods of using same |
| CN101271855A (en) * | 2007-03-23 | 2008-09-24 | 万国半导体股份有限公司 | Etch depth determination for sgt technology |
| CN101373724A (en) * | 2007-08-20 | 2009-02-25 | 中芯国际集成电路制造(上海)有限公司 | Method for determining whether semiconductor device grid undercut dimension being satisfactory or not |
| JP2010114130A (en) * | 2008-11-04 | 2010-05-20 | Panasonic Corp | Semiconductor device and method of manufacturing the same |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100594223B1 (en) * | 2000-11-10 | 2006-07-03 | 삼성전자주식회사 | pattern formation method using two alternating phase shift mask |
| US6521138B2 (en) * | 2001-06-01 | 2003-02-18 | Silicon Integrated Systems Corporation | Method for measuring width of bottom under cut during etching process |
| US20030197872A1 (en) * | 2002-04-17 | 2003-10-23 | Littau Michael E. | Scatterometric measurement of undercut multi-layer diffracting signatures |
| US20040018647A1 (en) * | 2002-07-02 | 2004-01-29 | Applied Materials, Inc. | Method for controlling the extent of notch or undercut in an etched profile using optical reflectometry |
| DE102006002753B4 (en) * | 2006-01-20 | 2010-09-30 | X-Fab Semiconductor Foundries Ag | Method and apparatus for evaluating the undercut of deep trench structures in SOI slices |
| EP2202197B1 (en) * | 2008-12-29 | 2014-03-05 | Imec | Method for testing MEMS devices |
-
2020
- 2020-12-11 CN CN202011453153.3A patent/CN112563149B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE4136089A1 (en) * | 1991-10-30 | 1993-05-06 | Siemens Ag, 8000 Muenchen, De | Crystal orientation determination in wafer having zinc blende structure - performing reflectometry of four angles between edges of etched groove and longer sides of mask opening |
| US6791697B1 (en) * | 2002-03-21 | 2004-09-14 | Advanced Micro Devices, Inc. | Scatterometry structure with embedded ring oscillator, and methods of using same |
| JP2003287419A (en) * | 2002-03-27 | 2003-10-10 | Toshiba Corp | Pattern-inspection method and apparatus, and mask- manufacturing method |
| US6670612B1 (en) * | 2002-07-01 | 2003-12-30 | Kla-Tencor Technologies Corporation | Undercut measurement using SEM |
| CN101271855A (en) * | 2007-03-23 | 2008-09-24 | 万国半导体股份有限公司 | Etch depth determination for sgt technology |
| CN101373724A (en) * | 2007-08-20 | 2009-02-25 | 中芯国际集成电路制造(上海)有限公司 | Method for determining whether semiconductor device grid undercut dimension being satisfactory or not |
| JP2010114130A (en) * | 2008-11-04 | 2010-05-20 | Panasonic Corp | Semiconductor device and method of manufacturing the same |
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| CN112563149A (en) | 2021-03-26 |
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