CN112558209A - All-dielectric super-surface color filter based on H-shaped array - Google Patents

All-dielectric super-surface color filter based on H-shaped array Download PDF

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Publication number
CN112558209A
CN112558209A CN202011495449.1A CN202011495449A CN112558209A CN 112558209 A CN112558209 A CN 112558209A CN 202011495449 A CN202011495449 A CN 202011495449A CN 112558209 A CN112558209 A CN 112558209A
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array
dielectric
nano
medium
color filter
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Inventor
肖功利
杨寓婷
杨宏艳
邓艳容
曾丽珍
李海鸥
李琦
张法碧
傅涛
孙堂友
陈永和
刘兴鹏
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Guilin University of Electronic Technology
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Guilin University of Electronic Technology
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    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/20—Filters
    • G02B5/204—Filters in which spectral selection is performed by means of a conductive grid or array, e.g. frequency selective surfaces
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/18—Diffraction gratings
    • G02B5/1861—Reflection gratings characterised by their structure, e.g. step profile, contours of substrate or grooves, pitch variations, materials
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/18—Diffraction gratings
    • G02B5/1866—Transmission gratings characterised by their structure, e.g. step profile, contours of substrate or grooves, pitch variations, materials

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  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Optical Filters (AREA)

Abstract

The invention discloses an all-dielectric super-surface color filter based on an H-shaped array. The filter structure is as follows: and etching the medium nano array on the substrate, wherein the unit structure of the nano array is an H-shaped medium nano structure. The structure is composed of two symmetrical parallel medium rectangular blocks with equal length and width, and a medium rectangular block which is perpendicular to the middle of the two parallel rectangular blocks and has equal width. In the embodiment of the invention, the substrate material is silicon dioxide, the dielectric nano array material is silicon, the thickness is 75nm, the filling factor of the array in the x direction is 0.55, and the filling factor of the array in the y direction is 0.9. By utilizing the characteristics of the strong correlation between the resonance wavelength and the shape and the size of the silicon nanostructure, the invention can regulate and control the filtered color by scaling the structure size and changing the length and the width of a rectangular block in the H-shaped medium nanostructure, and the filtered color has extremely high saturation.

Description

All-dielectric super-surface color filter based on H-shaped array
(I) technical field
The invention relates to the technical field of micro-nano photoelectron, in particular to an all-dielectric super-surface color filter based on an H-shaped array.
(II) background of the invention
The color generation mechanism in nature is mainly divided into two categories: pigment colors and structural colors. The structural color is the color generated by the interaction of light and the microstructure, and the color is generated by the interference, grating diffraction, photonic crystal, light scattering and the like of the thin film or the multilayer structure. At present, many structural colors in nature can be realized in an artificial mode, and the interaction between light and materials is regulated and controlled by changing the microstructure of the surface of the materials, namely the core idea of generating the structural colors. However, the structural color is further developed, and an important challenge is the limit of the diffraction limit of light.
The development of the micro-nano metal structure preparation technology provides a new way for breaking through the diffraction limit to realize high resolution. The surface plasmon resonance generated by the interaction of the metal micro-nano structure and light can manipulate light, and the secondary diffraction local effect can break through the diffraction limit, so that the metal micro-nano structure has the capacity of generating super-high resolution color.
The metal micro-nano structure can realize color development with ultrahigh resolution, but the metal has interband transition and large loss in a visible light waveband, so that the color purity displayed by the plasmon structure is not high. An all-dielectric color filter based on Mie resonance has therefore been proposed to solve this problem. The all-dielectric color filter has low ohmic loss and high electromagnetic resonance in a visible light wave band, and can filter out colors with high saturation. Based on the characteristics, the all-dielectric structural color has the potential of replacing a plasmon structural color.
Disclosure of the invention
The invention provides a design of an all-dielectric super-surface color filter based on an H-shaped array, which can realize different characteristics and functions.
In order to solve the problems, the invention is realized by the following technical scheme:
in order to obtain higher saturation colors and greater freedom of color adjustment compared to the prior art. The invention discloses an all-dielectric super-surface color filter based on an H-shaped array. The silicon nano array is composed of a silicon nano array and a silicon dioxide substrate, and a silicon nano array periodic unit is a single H-shaped nano structure. The invention can realize the control of filtering color by regulating and controlling various parameters, such as: the width and length of the H-shaped nanostructure, scaling the size of the array, etc., all produce colors of very high saturation.
(IV) description of the drawings
Fig. 1 is a schematic perspective view of an all-dielectric super-surface color filter based on an H-type array according to the present invention.
FIG. 2 is a schematic two-dimensional plane view of a unit structure of an H-shaped silicon nano-array.
FIG. 3 is a reflectance spectrum curve with scaled nano-array sizes and the CIE1931 chromaticity diagram corresponding thereto.
FIG. 4 shows the modification of the nanostructure L1A reflectance spectrum curve of magnitude and a corresponding CIE1931 chromaticity diagram.
FIG. 5 shows the modification of the nanostructure L2A reflectance spectrum curve of magnitude and a corresponding CIE1931 chromaticity diagram.
Fig. 6 is a reflectance spectrum curve varying the nanostructure w size and the corresponding CIE1931 chromaticity diagram.
(V) detailed description of the preferred embodiments
In order to make the object and technical solution of the present invention more clear, the present invention is further described in detail below with reference to the accompanying drawings in combination with specific examples. Directional phrases used in the examples, such as "upper," "lower," "middle," "left," "right," "front," "rear," and the like, refer only to the orientation of the figures and are used in a generic and descriptive sense only and not for purposes of limitation.
The invention is implemented by adopting the following scheme: an all-dielectric super-surface color filter based on an H-shaped array is shown in figure 1 and comprises a dielectric nano-array 1; the substrate 2.
The invention relates to an all-dielectric super-surface color filter based on an H-shaped array, which is composed of a substrate and a dielectric nano-array as shown in figure 1, wherein the substrate is made of silicon dioxide, and the dielectric nano-array is made of silicon. The individual cells of the silicon nanoarray are shown in FIG. 2: the H-shaped silicon nanostructure is composed of two parallel silicon nanometer rectangular blocks and a silicon nanometer rectangular block vertical to the silicon nanometer rectangular blocks, wherein the two parallel silicon nanometer rectangular blocks are equal in size, and the silicon nanometer rectangular block vertical to the silicon nanometer rectangular blocks is connected between the two parallel silicon nanometer rectangular blocks.
The parameters of an all-dielectric super-surface color filter based on an H-type array in the invention are shown in fig. 1 and fig. 2: the thickness H of the silicon nano array is 75 nm; two parallel silicon nano rectangular blocks with length L1Width w; the length of the silicon nano rectangular block vertical to the two parallel rectangular blocks is L2Width w; x direction period of PxFill factor fx＝(w+w+L2)/px0.55; period of P in y directionyFill factor fy＝L1/py＝0.9。
A structure is simulated by adopting a three-dimensional Finite Difference Time Domain (FDTD) method, the FDTD boundary condition is set, the positive and negative directions of a z axis are set as a Perfect Matching Layer (PML), the positive and negative directions of an x axis and a y axis are set as periodic boundary conditions, and input light is plane wave of 400nm to 800 nm. The reflection coefficient R is defined as: R-Pout/Pin where Pin and Pout are the input and output power, respectively.
Plane waves are vertically injected into the H-shaped silicon nano array from the positive direction of the z axis, strong electric and magnetic Mie resonance of the silicon nano structure is excited, the scattering of the nano structure can be influenced by the interaction of electric dipole and magnetic dipole resonance in the nano structure, the scattering direction of the nano structure is dependent on the wavelength, and the backscattering of the nano structure is enhanced in the visible light wavelength. The resonance wavelength has strong correlation with the shape and the size of the silicon nano structure, and the full light regulation and control of the reflected light color in the visible light range can be realized by regulating and controlling the structural parameters of the silicon nano structure. This is illustrated below by specific examples.
Fig. 3 is a transmission spectrum and CIE1931 chromaticity diagram when the array size is scaled. In FIG. 3, S (1) is a parameter L1＝240nm，L2H-shaped nano array with the wavelength of 48nm and the wavelength of 32.5 nm. S (2) is based on S (1), L1，L2W is increased by 20nm, 4nm and 2.5nm respectively, S (3) is based on S (2), L1，L2W is increased by 20nm, 4nm and 2.5nm H-shaped nano array respectively in proportion, and so on, L of S (9)1，L2The w parameters are 400nm, 80nm and 52.5nm respectively. As S (1) changes to S (9), the transmission spectrum formants shift from 455nm red to 667nm, and the CIE1931 chromaticity coordinates also shift gradually from the blue region to the red region, all lying at the edge of the sRGB color domain, demonstrating extremely high saturation. By scaling the size of the H-shaped nano array, color filtering with high saturation in the visible light range can be realized.
L1Is the length of two parallel rectangular blocks, when H is 75nm, L2＝60nm，w＝40nm，L1Increasing from 240nm to 400nm, the resonance peak of the reflection spectrum is red-shifted. As shown in FIG. 4, when L is1When the wavelength is 240, the position of the resonance peak is 449nm, the resonance peak is in a blue wave band, and when L is in the blue wave band1Increasing to 400nm and the peak to peak resonance to 567 nm. The reflection spectrum is corresponding to a CIE1931 chromaticity diagram, and a coordinate point corresponding to the reflection spectrum follows L1Gradually moving from the blue region to the red region, and the generated coordinate points are all at the edge of the sRGB color gamut, which indicates that the filtered colors have extremely high saturation.
L2Is the length of a rectangular block perpendicular to two parallel rectangular blocks, when H is 75nm, L1＝300nWhen m, w is 40nm, L2From 20nm to 100nm, the resonance peak of the reflection spectrum gradually red shifts from 515nm to 534nm, and as shown in FIG. 5, the peak value of the resonance peak also gradually increases. The coordinate points corresponding to the transmission spectrum also gradually change.
w is the width of two parallel rectangular blocks and the rectangular block perpendicular to the blocks, where H is 75nm, L1＝300nm，L2When w is 60nm, w increases from 30nm to 90nm, and as shown in fig. 6, the formant gradually red-shifts from 501nm to 659nm, and when w is 90nm, a secondary peak is generated in the blue band. The CIE1931 chromaticity diagram coordinate corresponding to the transmission spectrum gradually changes from blue to red along with the increase of w, and the chromaticity coordinate is located at the chromaticity edge of sRGB, so that the chromaticity diagram has extremely high color saturation.
While the preferred embodiments of the present invention have been described in detail, it is to be understood that the invention is not limited thereto, and that various equivalent modifications and substitutions may be made by those skilled in the art without departing from the spirit of the present invention, and are intended to be included within the scope of the present application.

Claims (7)

1. An all-dielectric super-surface color filter based on an H-type array is characterized in that: etching a medium nano array 1 on a substrate 2; the medium nano array 1 is made of silicon, and the substrate 2 is made of silicon dioxide; the unit structure of the dielectric nano array 1 is an H-shaped dielectric nano grating which is composed of two units with the length of L1A width w of symmetrical parallel rectangular blocks, and a length L perpendicular to the center of two parallel rectangular blocks2A medium rectangular block with the width of w; wherein the thickness of the medium nano array 1 is 75nm, and the period in the x direction is pxA fill factor of fx＝(w+w+L2)/px0.55, period in y direction pyA fill factor of fy＝L1/py＝0.9。
2. The all-dielectric super-surface color filter based on the H-type array according to claim 1, wherein: a dielectric nanoarray 1 is etched on a substrate 2.
3. The all-dielectric super-surface color filter based on the H-type array according to claim 1, wherein: the medium nano array 1 is made of silicon, and the substrate 2 is made of silicon dioxide.
4. The all-dielectric super-surface color filter based on the H-type array according to claim 1, wherein: the unit structure of the dielectric nano array 1 is an H-shaped dielectric nano grating which is composed of two units with the length of L1A width w of symmetrical parallel rectangular blocks, and a length L perpendicular to the center of two parallel rectangular blocks2And a rectangular block of medium with width w.
5. The all-dielectric super-surface color filter based on the H-type array according to claim 1, wherein: the thickness of the dielectric nano array 1 is 75 nm.
6. The all-dielectric super-surface color filter based on the H-type array according to claim 1, wherein: the period of the medium nano array in the x direction is pxA fill factor of fx＝(w+w+L2)/px＝0.55。
7. The all-dielectric super-surface color filter based on the H-type array according to claim 1, wherein: the period of the medium nano array in the y direction is pyA fill factor of fy＝L1/py＝0.9。
CN202011495449.1A 2020-12-17 2020-12-17 All-dielectric super-surface color filter based on H-shaped array Pending CN112558209A (en)

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20170276848A1 (en) * 2015-08-31 2017-09-28 National Technology & Engineering Solutions Of Sandia, Llc Rapidly tunable, narrow-band infrared filter arrays
CN206788402U (en) * 2017-03-22 2017-12-22 桂林电子科技大学 A kind of phasmon waveguide bandpass filter
US20180045953A1 (en) * 2016-04-29 2018-02-15 The Board Of Trustees Of The Leland Stanford Junior University Device components formed of geometric structures
CN109193100A (en) * 2018-08-03 2019-01-11 中国计量大学 A kind of super transparent resonance device of surface class electromagnetically induced of all dielectric
CN111999901A (en) * 2020-06-23 2020-11-27 南开大学 Super-surface axial cone device for generating multiband achromatic Bessel beams

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20170276848A1 (en) * 2015-08-31 2017-09-28 National Technology & Engineering Solutions Of Sandia, Llc Rapidly tunable, narrow-band infrared filter arrays
US20180045953A1 (en) * 2016-04-29 2018-02-15 The Board Of Trustees Of The Leland Stanford Junior University Device components formed of geometric structures
CN206788402U (en) * 2017-03-22 2017-12-22 桂林电子科技大学 A kind of phasmon waveguide bandpass filter
CN109193100A (en) * 2018-08-03 2019-01-11 中国计量大学 A kind of super transparent resonance device of surface class electromagnetically induced of all dielectric
CN111999901A (en) * 2020-06-23 2020-11-27 南开大学 Super-surface axial cone device for generating multiband achromatic Bessel beams

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
JULIEN PROUST 等: "All-Dielectric Colored Metasurfaces with Silicon Mie Resonators", 《ACS NANO》 *

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Application publication date: 20210326