CN112558054A - Millimeter wave broadband radar platform - Google Patents
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S13/00—Systems using the reflection or reradiation of radio waves, e.g. radar systems; Analogous systems using reflection or reradiation of waves whose nature or wavelength is irrelevant or unspecified
- G01S13/02—Systems using reflection of radio waves, e.g. primary radar systems; Analogous systems
- G01S13/0209—Systems with very large relative bandwidth, i.e. larger than 10 %, e.g. baseband, pulse, carrier-free, ultrawideband
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
- G01S7/02—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S13/00
- G01S7/28—Details of pulse systems
- G01S7/285—Receivers
- G01S7/34—Gain of receiver varied automatically during pulse-recurrence period, e.g. anti-clutter gain control
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
- G01S7/02—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S13/00
- G01S7/35—Details of non-pulse systems
- G01S7/352—Receivers
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/26—Modifications of amplifiers to reduce influence of noise generated by amplifying elements
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Abstract
The invention provides a millimeter wave broadband radar platform, which comprises a main platform and an auxiliary platform, wherein the main platform and the auxiliary platform respectively comprise an antenna module and a radio frequency module, the antenna module comprises a receiving antenna, and the radio frequency module comprises a low noise amplifier and a frequency mixer; the low noise amplifier comprises a transformer T1, an input matching circuit, MOS transistors M1-M6, inductors L5-L10, capacitors C5-C8 and a resistor R1. In the embodiment, the blocking capacitor and the matching inductor are connected in series between the two stages of amplifying circuits, the blocking capacitor, the matching inductor and the MOS transistor parasitic capacitor form a resonant LC network, and the blocking capacitor, the matching inductor and the MOS transistor parasitic capacitor resonate with each other by adjusting the sizes of the two inductors, so that the high-frequency gain of the circuit can be compensated, and the gain flatness of the low-noise amplifier is improved.
Description
Technical Field
The invention relates to the technical field of millimeter wave broadband radars, in particular to a millimeter wave broadband radar platform.
Background
The millimeter wave broadband radar has the advantages of high resolution, high precision, wide frequency band and the like, and is favored in the military field. The millimeter wave broadband radar platform is used for realizing ultrahigh resolution processing and data acquisition on a target through millimeter waves, a low-noise amplifier serves as a first active module of a receiving channel in the receiving channel of the millimeter wave broadband radar platform, the performance of the low-noise amplifier has great influence on the whole radar platform, and for an ideal low-noise amplifier, the amplitude of a gain in a working frequency range is kept unchanged. In a receiving channel of a traditional millimeter wave broadband radar platform, the gain of a low-noise amplifier is in a descending trend at high frequency, fluctuation in a gain band is large, and gain flatness is low.
Disclosure of Invention
In view of this, the present invention provides a millimeter wave broadband radar platform to solve the problem of low gain flatness of the low noise amplifier in the conventional millimeter wave broadband radar platform.
The technical scheme of the invention is realized as follows: a millimeter wave broadband radar platform comprises a main platform and an auxiliary platform, wherein the main platform and the auxiliary platform respectively comprise an antenna module and a radio frequency module, the antenna module comprises a receiving antenna, and the radio frequency module comprises a low noise amplifier and a mixer;
the low noise amplifier comprises a transformer T1, an input matching circuit, MOS tubes M1-M6, inductors L5-L10, capacitors C5-C8 and a resistor R1;
the receiving antenna is grounded through a primary winding of a transformer T1, two ends of a secondary winding of the transformer T1 are respectively connected with the grids of an MOS tube M1 and an MOS tube M2 through an input matching circuit, a power supply VDD is respectively connected with the drain electrode of an MOS tube M1 through an inductor L5 and is connected with the drain electrode of an MOS tube M2 through an inductor L6, and the source electrodes of the MOS tube M1 and the MOS tube M2 are both grounded;
the power supply VDD is grounded through an inductor L7, an MOS tube M4 and an MOS tube M3 in sequence, the drain electrode of the MOS tube M4 is connected with the input end of the frequency mixer through a capacitor C5, the power supply VDD is grounded through an inductor L8, an MOS tube M5 and an MOS tube M6 in sequence, the drain electrode of the MOS tube M5 is connected with the input end of the frequency mixer through a capacitor C6, and the power supply VDD is also connected with the gates of the MOS tube M4 and the MOS tube M5 through a resistor R1;
the drain of the MOS transistor M1 is further connected to the gate of the MOS transistor M3 through a capacitor C7 and an inductor L9 in sequence, and the drain of the MOS transistor M2 is further connected to the gate of the MOS transistor M6 through a capacitor C8 and an inductor L10 in sequence.
Optionally, the main platform is configured to display target detection information and control signal parameters, sampling parameters, and a CFAR threshold, and the auxiliary platform is configured to control radar modulation bandwidth, modulation period parameters, and time-frequency processing parameters and display micro-motion target time-frequency information.
Optionally, the main platform and the auxiliary platform further include a data acquisition module, a digital processing module and a terminal display control module, the antenna module further includes a transmitting antenna, and the radio frequency module further includes an excitation source, a multi-phase filter and an intermediate frequency amplifier;
the excitation source is respectively connected with the input end of the multi-phase filter and the transmitting antenna, the output end of the multi-phase filter is also connected with the input end of the frequency mixer, the output end of the frequency mixer is connected with the data acquisition module through the intermediate frequency amplifier, and the data acquisition module is connected with the terminal display control module through the digital processing module;
in the main platform, the data acquisition module is also directly connected with the terminal display control module.
Optionally, the transmitting antenna and the receiving antenna both use a series-fed linear array antenna composed of microstrip patch units, and the transmitting antenna and the receiving antenna are separately arranged.
Optionally, in the main platform, the sampling rate of the data acquisition module is 25 Msps; in the auxiliary platform, the sampling rate of the data acquisition module is 500 Ksps.
Optionally, in the main platform, the data acquisition module is further connected to an upper computer through a gigabit network port; in the auxiliary platform, the data acquisition module is also connected with an upper computer through a USB interface.
Optionally, the low noise amplifier further includes MOS transistors M7 to M10;
the power supply VDD is grounded through an MOS tube M8 and an MOS tube M7 in sequence after passing through an inductor L7, the grid electrode of the MOS tube M8 is connected with the grid electrode of the MOS tube M4, and the grid electrode of the MOS tube M7 is connected with the grid electrode of the MOS tube M3;
the power supply VDD is grounded through a MOS tube M9 and a MOS tube M10 in sequence after passing through an inductor L8, the grid electrode of the MOS tube M9 is connected with the grid electrode of the MOS tube M5, and the grid electrode of the MOS tube M10 is connected with the grid electrode of the MOS tube M6.
Optionally, the input matching circuit includes an inductor L2 and an inductor L4, the inductor L2 is connected between the source of the MOS transistor M1 and ground, and the inductor L4 is connected between the source of the MOS transistor M2 and ground.
Optionally, the input matching circuit further includes an inductor L1, an inductor L3, and capacitors C1 to C4;
one end of a secondary winding of the transformer T1 is connected with the grid electrode of the MOS tube M1 through an inductor L1 and a capacitor C1 in sequence, and the common end of the secondary winding of the transformer T1 and the inductor L1 is grounded through a capacitor C2;
the other end of the secondary winding of the transformer T1 is connected with the gate of the MOS tube M2 through an inductor L3 and a capacitor C3 in sequence, and the common end of the secondary winding of the transformer T1 and the inductor L3 is grounded through a capacitor C4.
Compared with the prior art, the millimeter wave broadband radar platform has the following beneficial effects:
(1) a blocking capacitor and a matching inductor are connected in series between two stages of amplifying circuits of the low-noise amplifier, the blocking capacitor, the matching inductor and a MOS tube parasitic capacitor form a resonant LC network, and the blocking capacitor, the matching inductor and the MOS tube parasitic capacitor resonate by adjusting the sizes of the two inductors, so that the high-frequency gain of the circuit can be compensated, and the gain flatness of the low-noise amplifier is improved;
(2) the second stage of the low-noise amplifier adopts a parallel-connected cascode amplifying structure, so that the current density in the circuit can be reduced, sufficient allowance of the current density is ensured, the reliability of the circuit is further improved, and the service life of the circuit is prolonged;
(3) negative feedback is respectively introduced into the source inductors L2 and L4, so that the circuit is more stable, extra real part and positive imaginary part impedance can be provided, and the input matching of the input matching circuit is easier; the gate inductors L1 and L3 can provide positive imaginary impedance, and are matched with the inductors L2 and L4 for input matching, so that the difficulty of input matching is further reduced.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts.
FIG. 1 is a circuit diagram of a low noise amplifier of the present invention;
FIG. 2 is a small signal diagram of the circuit of the capacitor C7, the inductor L5 and the inductor L9 according to the present invention;
FIG. 3 is a block diagram of the millimeter wave broadband radar platform of the present invention;
fig. 4 is a circuit diagram of the rf module of the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be obtained by a person skilled in the art without any inventive step based on the embodiments of the present invention, are within the scope of the present invention.
The millimeter wave broadband radar platform of this embodiment includes main platform and auxiliary platform, and main platform and auxiliary platform all include antenna module and radio frequency module, and antenna module includes receiving antenna, and radio frequency module includes low noise amplifier and mixer. As shown in fig. 1, the low noise amplifier includes a transformer T1, an input matching circuit, MOS transistors M1 to M6, inductors L5 to L10, capacitors C5 to C8, and a resistor R1. The receiving antenna is grounded through a primary winding of a transformer T1, two ends of a secondary winding of the transformer T1 are respectively connected with the grids of an MOS tube M1 and an MOS tube M2 through an input matching circuit, a power supply VDD is respectively connected with the drain electrode of an MOS tube M1 through an inductor L5 and the drain electrode of an MOS tube M2 through an inductor L6, and the source electrodes of the MOS tube M1 and the MOS tube M2 are both grounded. The power supply VDD is further grounded through an inductor L7, a MOS tube M4 and a MOS tube M3 in sequence, the drain electrode of the MOS tube M4 is connected with the input end of the frequency mixer through a capacitor C5, the power supply VDD is further grounded through an inductor L8, a MOS tube M5 and a MOS tube M6 in sequence, the drain electrode of the MOS tube M5 is connected with the input end of the frequency mixer through a capacitor C6, and the power supply VDD is further connected with the gates of the MOS tube M4 and the MOS tube M5 through a resistor R1. The drain of the MOS transistor M1 is further connected to the gate of the MOS transistor M3 through a capacitor C7 and an inductor L9 in sequence, and the drain of the MOS transistor M2 is further connected to the gate of the MOS transistor M6 through a capacitor C8 and an inductor L10 in sequence.
In this embodiment, the capacitor C7, the inductor L9, the capacitor C8, and the inductor L10 are removed first, and the high-frequency gain of the circuit is analyzed: taking MOS transistors M1 and M3 as an example, since the parasitic capacitances of M1 and M3 provide an extra path for signals, the high-frequency gain bandwidth is seriously damaged, and the gain flatness of the circuit is low, and the drain inductance L5 of M1 is not enough to counteract the influence of the parasitic capacitances. In order to eliminate the influence of M1 and M3 parasitic capacitances, in this embodiment, a dc blocking capacitor C7 and a matching inductor L9 are connected in series between MOS transistors M1 and M3, as shown in fig. 2, a resonant LC network is formed by a capacitor C7, an inductor L9, a parasitic capacitance Cgd1 of M1, and a parasitic capacitance Cgs2 of M3, and the magnitudes of L5 and L9 are adjusted to make the capacitors resonate with the parasitic capacitances, so that the high-frequency gain of the circuit can be compensated, the gain flatness of the low-noise amplifier is improved, and the gain fluctuation can be controlled within 1 dB.
In the low noise amplifier, signals are transmitted in a differential mode, a transformer T1 is used for converting a single-ended signal of a receiving antenna into a differential signal, and the output impedance of the low noise amplifier and the input impedance of the PPF are matched in a conjugate mode. The M1 and M2 drain electrodes adopt inductive loads L5 and L6, because the parasitic resistance of the inductor is very small, the voltage drop on the inductor is almost zero, the swing amplitude of the output signal is not limited, compared with the resistive load, the inductive load is easy to output and match, and the frequency can be higher. M3 and M4, M5 and M6 respectively form a cascode amplification structure, M3 and M6 are common source stages, M4 and M5 are common gate stages, the voltage swing of the cascode amplification structure is shared by the common source stage and the common gate stage, the voltage swing between ports of MOS tubes in the cascade structure is small, the voltage swing between the ports of the MOS tubes can be prevented from being too large, and the reliability of the circuit is improved. The inductor L7 and the capacitor C5, the inductor L8 and the capacitor C6 form an output matching circuit, respectively.
The main platform of the embodiment is used for displaying target detection information and controlling signal parameters, sampling parameters and CFAR thresholds, the auxiliary platform is built by adopting Matlab GUI, normal communication between an upper computer and an acquisition card is ensured by adopting driving of an upper computer windows system, and the auxiliary platform is used for controlling radar modulation bandwidth, modulation period parameters and time-frequency processing parameters and displaying micro-motion target time-frequency information. As shown in fig. 3, the main platform and the auxiliary platform further include a data acquisition module, a digital processing module, and a terminal display control module, as shown in fig. 4, the antenna module further includes a transmitting antenna, and the radio frequency module further includes an excitation source, a multi-phase filter, and an intermediate frequency amplifier. The excitation source is respectively connected with the input end of the multi-phase filter and the transmitting antenna, the output end of the multi-phase filter is also connected with the input end of the frequency mixer, the output end of the frequency mixer is connected with the data acquisition module through the intermediate frequency amplifier, and the data acquisition module is connected with the terminal display control module through the digital processing module. In the main platform, the data acquisition module is also directly connected with the terminal display control module.
Generally, microstrip antennas have been widely used in radar and electronic countermeasure fields because of their advantages of low profile, light weight, and easy coplanar integration with microwave circuits. For a microstrip array antenna, in order to meet specific requirements of antenna beams, the antenna array needs proper amplitude phase distribution, which makes the feed network structure of the microstrip antenna array complex, introduces large loss, and reduces the radiation efficiency of the antenna, especially under the condition of V-band high-frequency application. Compared with the parallel feed of the microstrip antenna array, the series feed of the microstrip antenna array can obviously reduce the complexity of a feed network, shorten the length of a microstrip transmission line in the network, reduce the loss caused by the feed network, and is widely adopted in fixed beams. Therefore, in the antenna module of the main platform and the auxiliary platform in the embodiment, the series-fed linear array antenna composed of the microstrip patch units is adopted, the transmitting antenna and the receiving antenna are separately arranged, and the beam coverage range meets the index requirement. In the design process, the imported Rogers plate is selected as the plate, the thickness of the substrate is 0.127mm, and the thickness of the copper-clad plate is 0.018 mm. In order to realize the low side lobe characteristic of the antenna, the width of each patch unit is adjusted according to the amplitude weighting coefficient, so that the good standing wave characteristic and the good gain of the microstrip patch linear array antenna are ensured. Meanwhile, on the premise of ensuring better directivity, lower side lobes are realized.
In the radio frequency module, an excitation source mainly completes the generation of frequency modulation continuous wave signals, and comprises a phase-locked loop, a voltage-controlled oscillator and a power amplifier; the receiving channel comprises a low noise amplifier, a multiphase filter, a mixer and an intermediate frequency amplifier, and is mainly used for completing low noise amplification, mixing, intermediate frequency amplification processing and the like of echo signals. The polyphase filter is used for converting the output of the excitation source into two quadrature signals with phases different by 90 degrees.
The main platform and the auxiliary platform data acquisition modules adopt multichannel synchronous acquisition ADCs to realize acquisition of echo signals. The sampling rate of the main platform is up to 25Msps, data acquisition needs to be transmitted to an upper computer through a network port mode, so that a data acquisition module of the main platform is also connected to the upper computer through a gigabit network port, and the highest rate can reach 1 GBPS. The auxiliary platform is designed to have a sampling rate of 500Ksps corresponding to a wide signal period, so that an original echo signal is collected through a USB2 interface and is transmitted to an upper computer for subsequent processing. The data acquisition modules of the main platform and the auxiliary platform take the FPGA as a main control core, and the main function of the data acquisition modules is to receive parameter commands sent by an upper computer, generate time sequence control signals required by transmission and reception, and provide a homologous reference clock and hardware trigger signals.
The digital processing module of the main platform is completed through the FPGA and the DSP chip. The DSP chip is mainly used for signal processing and control and is responsible for loading programs. The DSP chip is connected with the FPGA chip through a synchronous interface, and has the characteristics of high-speed processing capacity, flexible external interface, flexible control and the like. The DSP chip program supports dynamic loading and updating and can also conveniently support dynamic upgrading and updating of the program. The DSP program is pre-stored in an onboard FLASH chip of the processing unit, and the DSP is automatically loaded when the system is powered on. If the DSP program needs to be updated, the configuration file of the main control processing unit can be directly modified, so that the main control processing unit program enters a DSP program updating mode, and the updated DSP program is stored in the corresponding position of the main control processing unit in advance; after the main control processing unit program is started, a new DSP program is automatically written into the onboard FLASH chip, and then the update of the DSP program can be completed. Therefore, the digital processing module in the main platform can expand the processing capacity of the online C language interactive programming function of experimenters through the loading and updating of the DSP program, complete the functions of mean CFAR processing, angle and distance measurement processing, track tracking processing and the like through the parameterization setting of a protection unit, a reference unit and the like, and meet the index requirements. The digital processing module in the auxiliary platform is operated by an upper computer, so that time-frequency processing of an off-line data micro-motion target is mainly realized, and the off-line Matlab programming function of experimenters is expanded.
The operation environment of the terminal display control module is a Windows operation system platform, interactive operation is carried out by using a graphical human-computer interface, and the operation interface mainly comprises graphical components such as menus, buttons, multi-choice boxes, radio boxes and the like, so that intuitive visual parameter input and waveform characteristic display are realized.
In the present embodiment, M3 and M4, and M5 and M6 respectively form a cascode amplifying structure, and simulation of the above low noise amplifier shows that, since M3 and M4, and M5 and M6 are power output stages, the current density in the circuit is too large, the margin of the current density is small, and the reliability of the circuit is reduced. As shown in fig. 1, the low noise amplifier of the present embodiment preferably further includes MOS transistors M7 to M10. The power supply VDD is grounded through a MOS tube M8 and a MOS tube M7 in sequence after passing through an inductor L7, the grid electrode of the MOS tube M8 is connected with the grid electrode of the MOS tube M4, and the grid electrode of the MOS tube M7 is connected with the grid electrode of the MOS tube M3. The power supply VDD is grounded through a MOS tube M9 and a MOS tube M10 in sequence after passing through an inductor L8, the grid electrode of the MOS tube M9 is connected with the grid electrode of the MOS tube M5, and the grid electrode of the MOS tube M10 is connected with the grid electrode of the MOS tube M6. In this embodiment, M7 and M8, and M9 and M10 respectively form a cascode amplification structure, which is equivalent to a parallel cascode amplification structure adopted in the second stage of the low noise amplifier, so that the current density in the circuit can be reduced, sufficient margin for the current density is ensured, the reliability of the circuit is further improved, and the service life of the circuit is prolonged. In the structure of the cascode circuit in parallel connection, the bias of the cascode stage is directly pulled to the power supply voltage VDD by the resistor R1, and the output matching circuit is respectively composed of the inductor L7, the capacitor C5, the inductor L8 and the capacitor C6, so that in a differential transmission line, the middle of symmetrical circuits at two sides is not required to be coupled by using a differential inductor, one inductor can be omitted, and the circuit cost is reduced.
Further, as shown in fig. 1, the input matching circuit of the present embodiment includes an inductor L2, an inductor L4, an inductor L1, an inductor L3, and capacitors C1 to C4, the inductor L2 is connected between the source of the MOS transistor M1 and the ground, and the inductor L4 is connected between the source of the MOS transistor M2 and the ground. One end of the secondary winding of the transformer T1 is connected with the gate of the MOS tube M1 through an inductor L1 and a capacitor C1 in sequence, and the common end of the secondary winding of the transformer T1 and the inductor L1 is grounded through a capacitor C2. The other end of the secondary winding of the transformer T1 is connected with the gate of the MOS tube M2 through an inductor L3 and a capacitor C3 in sequence, and the common end of the secondary winding of the transformer T1 and the inductor L3 is grounded through a capacitor C4. In this embodiment, negative feedback is respectively introduced into the source inductors L2 and L4, so that the circuit is more stable, and an extra real part and positive imaginary part impedance can be provided, so that input matching of the input matching circuit is easier; the L1 and the L3 are inductors connected in series with the gates of the MOS transistors, and mainly have the functions of providing positive imaginary impedance, matching the inductors L2 and L4 for input matching, and further reducing the difficulty of input matching.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents, improvements and the like that fall within the spirit and principle of the present invention are intended to be included therein.
Claims (9)
1. The utility model provides a millimeter wave broadband radar platform, includes main platform and auxiliary platform, and main platform and auxiliary platform all include antenna module and radio frequency module, and antenna module includes receiving antenna, and radio frequency module includes low noise amplifier and mixer, its characterized in that:
the low noise amplifier comprises a transformer T1, an input matching circuit, MOS tubes M1-M6, inductors L5-L10, capacitors C5-C8 and a resistor R1;
the receiving antenna is grounded through a primary winding of a transformer T1, two ends of a secondary winding of the transformer T1 are respectively connected with the grids of an MOS tube M1 and an MOS tube M2 through an input matching circuit, a power supply VDD is respectively connected with the drain electrode of an MOS tube M1 through an inductor L5 and is connected with the drain electrode of an MOS tube M2 through an inductor L6, and the source electrodes of the MOS tube M1 and the MOS tube M2 are both grounded;
the power supply VDD is grounded through an inductor L7, an MOS tube M4 and an MOS tube M3 in sequence, the drain electrode of the MOS tube M4 is connected with the input end of the frequency mixer through a capacitor C5, the power supply VDD is grounded through an inductor L8, an MOS tube M5 and an MOS tube M6 in sequence, the drain electrode of the MOS tube M5 is connected with the input end of the frequency mixer through a capacitor C6, and the power supply VDD is also connected with the gates of the MOS tube M4 and the MOS tube M5 through a resistor R1;
the drain of the MOS transistor M1 is further connected to the gate of the MOS transistor M3 through a capacitor C7 and an inductor L9 in sequence, and the drain of the MOS transistor M2 is further connected to the gate of the MOS transistor M6 through a capacitor C8 and an inductor L10 in sequence.
2. The millimeter wave wideband radar platform of claim 1, wherein the primary platform is configured to display target detection information and control signal parameters, sampling parameters, and CFAR thresholds, and the secondary platform is configured to control radar modulation bandwidth, modulation period parameters, time-frequency processing parameters, and display micro-motion target time-frequency information.
3. The millimeter wave broadband radar platform of claim 2, wherein the main platform and the auxiliary platform each further comprise a data acquisition module, a digital processing module and a terminal display and control module, the antenna module further comprises a transmitting antenna, and the radio frequency module further comprises an excitation source, a multi-phase filter and an intermediate frequency amplifier;
the excitation source is respectively connected with the input end of the multi-phase filter and the transmitting antenna, the output end of the multi-phase filter is also connected with the input end of the frequency mixer, the output end of the frequency mixer is connected with the data acquisition module through the intermediate frequency amplifier, and the data acquisition module is connected with the terminal display control module through the digital processing module;
in the main platform, the data acquisition module is also directly connected with the terminal display control module.
4. The millimeter-wave wideband radar platform of claim 3, wherein the transmit antenna and the receive antenna are series-fed linear array antennas formed by microstrip patch elements, and the transmit antenna and the receive antenna are separated.
5. The millimeter wave broadband radar platform of claim 3, wherein in the primary platform, the data acquisition module has a sampling rate of 25 Msps; in the auxiliary platform, the sampling rate of the data acquisition module is 500 Ksps.
6. The millimeter wave broadband radar platform of claim 5, wherein in the primary platform, the data acquisition module is further connected to the host computer through a gigabit network port; in the auxiliary platform, the data acquisition module is also connected with an upper computer through a USB interface.
7. The millimeter wave broadband radar platform of claim 1, wherein the low noise amplifier further comprises MOS transistors M7-M10;
the power supply VDD is grounded through an MOS tube M8 and an MOS tube M7 in sequence after passing through an inductor L7, the grid electrode of the MOS tube M8 is connected with the grid electrode of the MOS tube M4, and the grid electrode of the MOS tube M7 is connected with the grid electrode of the MOS tube M3;
the power supply VDD is grounded through a MOS tube M9 and a MOS tube M10 in sequence after passing through an inductor L8, the grid electrode of the MOS tube M9 is connected with the grid electrode of the MOS tube M5, and the grid electrode of the MOS tube M10 is connected with the grid electrode of the MOS tube M6.
8. The millimeter wave broadband radar platform of claim 7, wherein the input matching circuit comprises an inductor L2 and an inductor L4, the inductor L2 is connected between the source of the MOS transistor M1 and ground, and the inductor L4 is connected between the source of the MOS transistor M2 and ground.
9. The millimeter wave broadband radar platform of claim 8, wherein the input matching circuit further comprises an inductor L1, an inductor L3, and capacitors C1-C4;
one end of a secondary winding of the transformer T1 is connected with the grid electrode of the MOS tube M1 through an inductor L1 and a capacitor C1 in sequence, and the common end of the secondary winding of the transformer T1 and the inductor L1 is grounded through a capacitor C2;
the other end of the secondary winding of the transformer T1 is connected with the gate of the MOS tube M2 through an inductor L3 and a capacitor C3 in sequence, and the common end of the secondary winding of the transformer T1 and the inductor L3 is grounded through a capacitor C4.
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