CN112557864A - Circuit and method for judging type and pin of triode - Google Patents
Circuit and method for judging type and pin of triode Download PDFInfo
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Abstract
The invention discloses a type and pin judgment circuit and a method of a triode, wherein the type and pin judgment circuit of the triode comprises a singlechip control circuit, a detection circuit and a display circuit, wherein the detection circuit and the display circuit are connected with the singlechip control circuit; the detection circuit comprises a first branch, a second branch and a third branch which are respectively connected with three pins of the triode to be detected. The design circuit is simple, the principle is simple, the material object is small and exquisite, the cost is extremely low, and the effect of replacing a multimeter pen for measurement can be achieved in electronic design. And the judgment method based on the judgment circuit design is in principle consistent with the judgment method of a laboratory multimeter, so that the measurement accuracy is ensured, but the process of pointing and recording data by using a multimeter stylus is omitted, and the judgment efficiency is greatly improved while the accuracy is ensured.
Description
Technical Field
The application belongs to the technical field of triode detection, and particularly relates to a type and pin judgment circuit and method of a triode.
Background
The triode is an extremely widely used component in the current electronic technology, and the parameters of the triode are decisive for the success of electronic design. Therefore, it is very important in electronic design to correctly determine the type of the transistor (on the one hand, the NPN/PNP determination, on the other hand, the silicon material and the germanium material determination), and the pin sequence. At present, the most common distinguishing method in a laboratory is to measure the relation between pins of a triode by using a universal meter, but the method needs to repeatedly change the position of a meter pen and record numerical values, and the triode has small volume and is inconvenient to measure. The triode detection device in the existing market is complex in structure and high in cost, cannot judge the type and the pin of the triode comprehensively, and is inconvenient to use.
Disclosure of Invention
The application aims to provide a circuit and a method for judging the type and the pin of a triode, so that the type, the material and the pin of the triode can be conveniently judged.
In order to achieve the purpose, the technical scheme adopted by the application is as follows:
a kind of triode and pin judge circuit, the said type of triode and pin judge circuit include the control circuit of the one-chip computer, and detection circuit and display circuit connected with control circuit of the said one-chip computer; the detection circuit comprises a first branch, a second branch and a third branch which are respectively connected with three pins of the triode to be detected;
the first branch comprises a single-pole double-throw switch S1, a single-pole double-throw switch S4, a resistor R1 and a resistor R4, a common contact of the single-pole double-throw switch S1 serves as a first sampling point connected with one pin of a triode to be tested, an A contact of the single-pole double-throw switch S1 is connected with a common contact of the single-pole double-throw switch S4 through a resistor R1, a B contact of the single-pole double-throw switch S1 is directly connected with a common contact of the single-pole double-throw switch S4, an A contact of the single-pole double-throw switch S4 is connected with VCC, a B contact of the single-pole double-throw switch S4 is grounded through the resistor R4, and the first sampling point is connected to the singlechip control circuit;
the second branch comprises a single-pole double-throw switch S2, a single-pole double-throw switch S5, a resistor R2 and a resistor R5, a common contact of the single-pole double-throw switch S2 serves as a second sampling point connected with the other pin of the triode to be tested, an A contact of the single-pole double-throw switch S2 is connected with a common contact of the single-pole double-throw switch S5 through a resistor R2, a B contact of the single-pole double-throw switch S2 is directly connected with a common contact of the single-pole double-throw switch S5, an A contact of the single-pole double-throw switch S5 is connected with VCC, a B contact of the single-pole double-throw switch S5 is grounded through a resistor R5, and the second sampling point is connected to the singlechip control circuit;
the third branch comprises a single-pole double-throw switch S3, a single-pole double-throw switch S6, a resistor R3 and a resistor R6, a common contact of the single-pole double-throw switch S3 serves as a third sampling point connected with the last pin of the triode to be tested, an A contact of the single-pole double-throw switch S3 is connected with the common contact of the single-pole double-throw switch S6 through a resistor R3, a B contact of the single-pole double-throw switch S3 is directly connected with the common contact of the single-pole double-throw switch S6, the A contact of the single-pole double-throw switch S6 is connected with VCC, a B contact of the single-pole double-throw switch S6 is grounded through the resistor R6, and the third sampling point is connected to the singlechip control circuit;
and the singlechip control circuit acquires the voltages of the first sampling point, the second sampling point and the third sampling point and displays the voltages through the display circuit.
Several alternatives are provided below, but not as an additional limitation to the above general solution, but merely as a further addition or preference, each alternative being combinable individually for the above general solution or among several alternatives without technical or logical contradictions.
Preferably, the single-pole double-throw switch is a single-pole double-throw switch relay, and the single-chip microcomputer control circuit is connected with the control end of the single-pole double-throw switch relay.
Preferably, the single-pole double-throw switch relay is of an SRD-05VDC-SL-C type.
Preferably, the single chip microcomputer control circuit comprises a main control chip, and the first sampling point, the second sampling point and the third sampling point are respectively connected with an ADC pin of the main control chip.
Preferably, the main control chip is of a model STM32F407VGT 6.
Preferably, the display circuit comprises a display screen of type TFTLCD.
The application also provides a method for judging the type and the pin of the triode, which is realized based on the type and the pin judgment circuit of the triode, and the method for judging the type and the pin of the triode comprises the following steps:
step 1, judging the type and base of a triode;
1.1, resetting all single-pole double-throw switches to a contact B;
step 1.2, respectively connecting three pins of a triode to be tested to a common contact of a single-pole double-throw switch S1, a common contact of a single-pole double-throw switch S2 and a common contact of a single-pole double-throw switch S3;
step 1.3, controlling the single-pole double-throw switch S4 to switch to the contact A, recording the voltages of a first sampling point, a second sampling point and a third sampling point, and finishing the first sampling;
step 1.4, controlling the single-pole double-throw switch S4 to recover to a contact B, simultaneously controlling the single-pole double-throw switch S5 to switch to the contact A, recording the voltages of a first sampling point, a second sampling point and a third sampling point, and finishing second sampling;
step 1.5, controlling the single-pole double-throw switch S5 to recover to a contact B, simultaneously controlling the single-pole double-throw switch S6 to switch to the contact A, recording the voltages of the first sampling point, the second sampling point and the third sampling point, and finishing the third sampling;
step 1.6, judging the type and the base position of the triode according to the recorded voltage value:
if three voltages sampled at one time are all high levels in the three-time sampling, and the other three voltages sampled at the two times are one high level and two low levels, the triode to be tested is judged to be an NPN type triode, and the pin of the triode connected with the branch of the single-pole double-throw switch positioned at the contact A is the base electrode of the triode when the three voltages are all high levels;
if three voltages sampled twice are high levels in the three-time sampling, and the other three voltages sampled twice are a high level and two low levels, the triode to be tested is judged to be a PNP type triode, and the pin of the triode connected with the branch of the single-pole double-throw switch positioned at the contact A is the base electrode of the triode when the three voltages are the high level and the two low levels;
otherwise, judging that the triode is damaged or not connected;
step 2, judging an emitter and a collector of the triode;
step 2.1, if the triode to be tested is judged to be an NPN type triode in the step 1, judging an emitter and a collector of the triode as follows:
step 2.1.1, taking a branch where a base electrode of the triode is located as a known branch, taking the other two branches as unknown branches, switching two single-pole double-throw switches on the known branches to a contact A, and recovering the single-pole double-throw switches on the two unknown branches to a contact B;
2.1.2, dividing the two unknown branches into a first unknown branch and a second unknown branch, switching a single-pole double-throw switch on the first unknown branch, which is far away from the triode to be tested, to a contact A, recording the voltages of sampling points on the first unknown branch and the second unknown branch, and completing fourth sampling;
step 2.1.3, restoring the single-pole double-throw switch on the first unknown branch far away from the triode to be tested to a contact B, simultaneously switching the single-pole double-throw switch on the second unknown branch far away from the triode to be tested to a contact A, recording the voltages of sampling points on the second unknown branch and the first unknown branch, and completing fifth sampling;
step 2.1.4, calculating the voltage difference value of two sampling points of single sampling in the fourth sampling and the fifth sampling, wherein the pin corresponding to the unknown branch, which is positioned at the contact A and far away from the single-pole double-throw switch of the triode to be detected in the single sampling with the larger voltage difference value, is the emitting electrode of the triode, and the pin corresponding to the other unknown branch is the collecting electrode of the triode;
step 2.2, if the triode to be tested is judged to be the PNP type triode in the step 1, judging an emitting electrode and a collecting electrode of the triode as follows:
step 2.2.1, taking the branch of the base electrode of the triode as a known branch, taking the other two branches as unknown branches, switching the single-pole double-throw switch on the known branch close to the triode to be tested to the contact A, recovering the single-pole double-throw switch far away from the triode to be tested to the contact B, and recovering the single-pole double-throw switches on the two unknown branches to the contact B;
2.2.2, dividing the two unknown branches into a first unknown branch and a second unknown branch, switching a single-pole double-throw switch on the first unknown branch, which is far away from the triode to be tested, to a contact A, recording the voltages of sampling points on the first unknown branch and the second unknown branch, and completing fourth sampling;
2.2.3, restoring the single-pole double-throw switch on the first unknown branch far away from the triode to be tested to a contact B, simultaneously switching the single-pole double-throw switch on the second unknown branch far away from the triode to be tested to a contact A, recording the voltages of sampling points on the second unknown branch and the first unknown branch, and completing fifth sampling;
and 2.2.4, calculating the voltage difference value of two sampling points of single sampling in the fourth sampling and the fifth sampling, wherein the pin corresponding to the unknown branch, which is positioned at the contact A and far away from the single-pole double-throw switch of the triode to be detected in the single sampling with the larger voltage difference value, is the collector of the triode, and the pin corresponding to the other unknown branch is the emitter of the triode.
Preferably, in step 1.6, after the triode to be tested is determined to be an NPN-type triode and the branch where the base is located, if the voltage of the branch where the base is located and the voltage difference between the other two branches are 0.7V at most when the three voltages are all high levels, the triode is a silicon tube; if the voltage of the branch where the high-level time base electrode is located and the maximum voltage difference between the other two branches is 0.3V, the triode is a germanium tube;
after the triode to be tested is judged to be a PNP type triode and the branch of the base electrode, if the maximum voltage difference between the voltage of the branch of the base electrode and the voltage of the branch corresponding to the contact A of the single-pole double-throw switch far away from the triode to be tested is 0.7V, the triode is a silicon tube; if the maximum voltage difference between the voltage of the branch where the high-level time base electrode is located and the voltage of the branch corresponding to the A contact of the single-pole double-throw switch far away from the triode to be tested at the moment is 0.3V, the triode is a germanium tube.
The circuit and the method for judging the type and the pin of the triode have the advantages of simple design circuit, simple principle, small material object and extremely low cost, and can replace a multimeter pen for measurement in electronic design. And the judgment method based on the judgment circuit design is in principle consistent with the judgment method of a laboratory multimeter, so that the measurement accuracy is ensured, but the process of pointing and recording data by using a multimeter stylus is omitted, and the judgment efficiency is greatly improved while the accuracy is ensured.
Drawings
Fig. 1 is a schematic structural diagram of a type and pin determination circuit of a triode according to the present application;
fig. 2 is a schematic structural diagram of the detection circuit of the present application.
Detailed Description
The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are only a part of the embodiments of the present application, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
It will be understood that when an element is referred to as being "connected" to another element, it can be directly connected to the other element or intervening elements may also be present. Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used in the description of the present application herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the application.
In one embodiment, the circuit for judging the type and the pin of the triode is provided, so that the step of frequently switching the measuring pin by a universal pen is omitted, and the type (including materials) and the pin of the triode can be quickly and conveniently judged.
As shown in fig. 1, the type and pin determination circuit of the triode of the present embodiment includes a single chip control circuit, and a detection circuit and a display circuit connected to the single chip control circuit.
As shown in fig. 2, the detection circuit includes a first branch, a second branch and a third branch respectively connected to three pins of the transistor to be tested.
The first branch comprises a single-pole double-throw switch S1, a single-pole double-throw switch S4, a resistor R1 (for example, 100K Ω) and a resistor R4 (for example, 1K Ω), a common contact of the single-pole double-throw switch S1 is used as a first sampling point (sampling point 1) connected with one pin of a triode to be tested, an A contact of the single-pole double-throw switch S1 is connected with the common contact of the single-pole double-throw switch S4 through a resistor R1, a B contact of the single-pole double-throw switch S1 is directly connected with the common contact of the single-pole double-throw switch S4, an A contact of the single-pole double-throw switch S4 is connected with VCC, a B contact of the single-pole double-throw switch S4 is grounded through the resistor R4, and the first sampling point is connected to the singlechip control circuit.
The second branch comprises a single-pole double-throw switch S2, a single-pole double-throw switch S5, a resistor R2 (for example, 100K Ω) and a resistor R5 (for example, 1K Ω), a common contact of the single-pole double-throw switch S2 is used as a second sampling point (sampling point 2) connected with the other pin of the triode to be tested, an A contact of the single-pole double-throw switch S2 is connected with the common contact of the single-pole double-throw switch S5 through a resistor R2, a B contact of the single-pole double-throw switch S2 is directly connected with the common contact of the single-pole double-throw switch S5, an A contact of the single-pole double-throw switch S5 is connected with VCC, a B contact of the single-pole double-throw switch S5 is grounded through the resistor R5, and the second sampling point is connected to the singlechip control circuit.
The third branch comprises a single-pole double-throw switch S3, a single-pole double-throw switch S6, a resistor R3 (for example, 100K Ω) and a resistor R6 (for example, 1K Ω), a common contact of the single-pole double-throw switch S3 is used as a third sampling point (sampling point 3) connected with the last pin of the triode to be tested, an A contact of the single-pole double-throw switch S3 is connected with the common contact of the single-pole double-throw switch S6 through a resistor R3, a B contact of the single-pole double-throw switch S3 is directly connected with the common contact of the single-pole double-throw switch S6, the A contact of the single-pole double-throw switch S6 is connected with VCC, a B contact of the single-pole double-throw switch S6 is grounded through the resistor R6, and the third sampling point is connected to the singlechip control circuit;
and the singlechip control circuit acquires the voltages of the first sampling point, the second sampling point and the third sampling point and displays the voltages through the display circuit.
This embodiment can obtain different voltages at three sampling points through changing every single-pole double-throw switch's state, and this voltage shows in display circuit, has saved the process that needs frequent change and manual record data simultaneously of utilizing the universal meter measurement.
In order to improve the convenience of the judging circuit of the application, in one embodiment, the single-pole double-throw switch is a single-pole double-throw switch relay, and the single-chip microcomputer control circuit is connected with the control end of the single-pole double-throw switch relay. In the detection process, the state of the single-pole double-throw switch relay can be controlled by the single-chip microcomputer control circuit, so that automatic detection is realized, and data are recorded.
In the embodiment, the single-pole double-throw switch relay adopts an SRD-05VDC-SL-C model. On the premise of realizing the same function, the model of the single-pole double-throw switch relay can be replaced.
The single chip microcomputer control circuit in the embodiment comprises a main control chip, and the first sampling point, the second sampling point and the third sampling point are respectively connected with an ADC pin of the main control chip. The voltage of three sampling points is obtained by the ADC pin of chip, has removed the process that needs artifical reading and record from to voltage sampling degree of accuracy is higher.
In consideration of circuit functions and hardware cost, the main control chip adopts a model STM32F407VGT6 in one embodiment. It is easy to understand that the model of the main control chip can be replaced on the premise of meeting the requirement of the application for judging the realization of the circuit function.
In order to obtain better control and sampling effects, appropriate peripherals can be added on the basis of the main control chip, for example, in order to avoid that the output current of the main control chip is too small and the single-pole double-throw switch relay cannot be effectively controlled to work, a triode can be added between a pin of the main control chip and a control end of the single-pole double-throw switch relay; for another example, in order to improve the voltage identification of the sampling point, a signal amplification circuit and the like can be added between the sampling point and the ADC pin of the main control chip. Therefore, the circuit which is simply added with the peripheral based on the judgment circuit of the application still belongs to the protection scope of the application.
In one embodiment, the display circuit comprises a display screen with the model of TFTLCD, and the display screen is driven and controlled by the main control chip. It should be noted that, the process of controlling the display screen and the relay by the main control chip in this embodiment is a mature technology in the field of electronic component control, and is not described here any more.
Because the principle of this application's judgement circuit design principle is based on the principle realization that the triode was judged to the universal meter, consequently main control chip can directly show voltage on the display screen after the voltage of acquireing the sampling point in this embodiment, also can judge that logic processing back shows the judged result on the display screen according to the triode.
Of course, the circuit structure based on this embodiment is still within the protection scope of this application, in which other components are simply stacked on the basis of the determination circuit of this embodiment, for example, a header connector is added to connect with the detection circuit, so as to facilitate the direct insertion detection of the triode to be detected; for example, filter circuits are added at the sampling points to eliminate interference signals, etc.
In another embodiment, a method for determining a type and a pin of a transistor is provided, which is implemented based on the type and the pin of the transistor, and the method for determining the type and the pin of the transistor includes:
step 1, judging the type and base of the triode.
The triode is a current control semiconductor device and consists of two PN junctions, wherein the middle part is a base electrode, the two side parts are an emitter electrode and a collector electrode respectively, and the arrangement modes are NPN and PNP. Whether PNP or NPN. The corresponding polarities of the base electrode position of the triode are different from the polarities of the emitter electrode and the collector electrode, and the details are as follows:
the base electrode of the PNP triode corresponds to the N pole of the PN junction, and the emitter and the collector respectively correspond to the P poles of the two PN junctions. When the base electrode is connected with a high level, the two PN junctions are reversely biased to be cut off, so that the detection potential is only that the base electrode is at the high level, and the collector electrode and the emitter electrode are both at the low level. When the collector or the emitter is connected with a high level, the corresponding PN junction is positively biased to be conducted, so that the base and the pin connected with the high level present a high level (but a voltage drop of 0.7V or 0.3V exists, and the whole is also the high level). At this time, because there is a voltage difference between the base and the pin connected to the high level, the level state of the other pin is also high level.
The base electrode of the NPN triode corresponds to the P electrode of the PN junction, and the collector electrode and the emitter electrode respectively correspond to the N electrodes of the two PN junctions. When the base is connected to a high level, the two PN junctions are forward biased and conducted, so that three pins of the detection potential are all high level (but have a voltage drop of 0.7V or 0.3V, and are also high level on the whole). When the collector or the emitter is connected with high level, the corresponding PN junction is reversely biased to be cut off. Therefore, only the pin connected with the high level is in the high level, and the other pins are in the low level.
In summary, according to the unidirectional conductivity of the PN junction, the three pins of the transistor are respectively connected to a high level, and the polarity and the base position of the transistor can be distinguished by detecting the potentials of the three pins, so that the specific determination method for providing the type and the base of the transistor by the determination circuit in this embodiment is as follows:
1.1, resetting all single-pole double-throw switches to a contact B;
step 1.2, respectively connecting three pins of a triode to be tested to a common contact of a single-pole double-throw switch S1, a common contact of a single-pole double-throw switch S2 and a common contact of a single-pole double-throw switch S3;
step 1.3, controlling the single-pole double-throw switch S4 to switch to the contact A, recording the voltages of a first sampling point, a second sampling point and a third sampling point, and finishing the first sampling;
step 1.4, controlling the single-pole double-throw switch S4 to recover to a contact B, simultaneously controlling the single-pole double-throw switch S5 to switch to the contact A, recording the voltages of a first sampling point, a second sampling point and a third sampling point, and finishing second sampling;
step 1.5, controlling the single-pole double-throw switch S5 to recover to a contact B, simultaneously controlling the single-pole double-throw switch S6 to switch to the contact A, recording the voltages of the first sampling point, the second sampling point and the third sampling point, and finishing the third sampling; it should be noted that, step 1.3 to step 1.5 are to respectively take the same switching manner to the three branches and record the voltage, so the execution sequence of the three branches does not have a sequential requirement, and step 1.3 to step 1.5 in this embodiment only illustrate one of the feasible manners, and the remaining execution sequences still belong to the protection scope of this application.
Step 1.6, judging the type and the base position of the triode according to the recorded voltage value:
if three voltages sampled at one time are all high levels in the three-time sampling, and the other three voltages sampled at the two times are one high level and two low levels, the triode to be tested is judged to be an NPN type triode, and the pin of the triode connected with the branch of the single-pole double-throw switch positioned at the contact A is the base electrode of the triode when the three voltages are all high levels;
if three voltages sampled twice are high levels in the three-time sampling, and the other three voltages sampled twice are a high level and two low levels, the triode to be tested is judged to be a PNP type triode, and the pin of the triode connected with the branch of the single-pole double-throw switch positioned at the contact A is the base electrode of the triode when the three voltages are the high level and the two low levels;
otherwise, judging that the triode is damaged or not connected, namely the voltage in sampling has other conditions, and considering that the triode is damaged or not connected.
And 2, judging an emitter and a collector of the triode.
The PN junction in the triode is a space charge region (also called depletion layer) formed on two sides of the junction of P and N and composed of immobile positive and negative ions. The triode is not a symmetrical structure, and the asymmetry is mainly embodied in that the doping concentration of the semiconductor in the emission region is different from that in the collector region, and the doping concentration of the emission region is far higher than that in the collector region. The level of doping affects the concentration of electrons and holes and therefore the size (i.e., thickness) of the space charge region, which results in a different collector current to the emitter than emitter current to the collector. If the triode to be tested is NPN, the current flowing from the collector to the emitter is larger than the current flowing from the emitter to the collector, and the PNP is opposite. The current magnitude is mainly represented by the voltage difference between the emitter and the collector.
When the positions of the emitter and the collector are judged, a large resistor is connected to the base for voltage division, proper voltage is provided for the base according to the type (PNP/NPN) of the triode, forward and reverse currents are conducted between the emitter and the collector respectively, and the emitter and the collector are judged by comparing the magnitudes of the currents (embodied by the voltage). In this embodiment, the specific determination method based on the emitter and the collector of the triode provided by the determination circuit is as follows:
step 2.1, if the triode to be tested is judged to be an NPN type triode in the step 1, judging an emitter and a collector of the triode as follows:
step 2.1.1, taking a branch where a base electrode of the triode is located as a known branch, taking the other two branches as unknown branches, switching two single-pole double-throw switches on the known branches to a contact A, and recovering the single-pole double-throw switches on the two unknown branches to a contact B;
2.1.2, dividing the two unknown branches into a first unknown branch and a second unknown branch, switching a single-pole double-throw switch on the first unknown branch, which is far away from the triode to be tested, to a contact A, recording the voltages of sampling points on the first unknown branch and the second unknown branch, and completing fourth sampling;
it should be noted that, according to the connection manner of the single-pole double-throw switches on the branches in the present application, it can be known that the single-pole double-throw switches far away from the triode to be tested are the single-pole double-throw switches S4, S5, and S6 in the present application, and the corresponding single-pole double-throw switches close to the triode to be tested are the single-pole double-throw switches S1, S2, and S3 in the present application, and the corresponding single-pole double-throw switches can be determined by combining the respective branches. For example, the single-pole double-throw switch far away from the triode to be tested in the first branch is the single-pole double-throw switch S4, and the rest is the same.
Step 2.1.3, restoring the single-pole double-throw switch on the first unknown branch far away from the triode to be tested to a contact B, simultaneously switching the single-pole double-throw switch on the second unknown branch far away from the triode to be tested to a contact A, recording the voltages of sampling points on the second unknown branch and the first unknown branch, and completing fifth sampling;
step 2.1.4, calculating the voltage difference value of two sampling points of single sampling in the fourth sampling and the fifth sampling, wherein the pin corresponding to the unknown branch, which is positioned at the contact A and far away from the single-pole double-throw switch of the triode to be detected in the single sampling with the larger voltage difference value, is the emitting electrode of the triode, and the pin corresponding to the other unknown branch is the collecting electrode of the triode;
step 2.2, if the triode to be tested is judged to be the PNP type triode in the step 1, judging an emitting electrode and a collecting electrode of the triode as follows:
step 2.2.1, taking the branch of the base electrode of the triode as a known branch, taking the other two branches as unknown branches, switching the single-pole double-throw switch on the known branch close to the triode to be tested to the contact A, recovering the single-pole double-throw switch far away from the triode to be tested to the contact B, and recovering the single-pole double-throw switches on the two unknown branches to the contact B;
2.2.2, dividing the two unknown branches into a first unknown branch and a second unknown branch, switching a single-pole double-throw switch on the first unknown branch, which is far away from the triode to be tested, to a contact A, recording the voltages of sampling points on the first unknown branch and the second unknown branch, and completing fourth sampling;
2.2.3, restoring the single-pole double-throw switch on the first unknown branch far away from the triode to be tested to a contact B, simultaneously switching the single-pole double-throw switch on the second unknown branch far away from the triode to be tested to a contact A, recording the voltages of sampling points on the second unknown branch and the first unknown branch, and completing fifth sampling;
and 2.2.4, calculating the voltage difference value of two sampling points of single sampling in the fourth sampling and the fifth sampling, wherein the pin corresponding to the unknown branch, which is positioned at the contact A and far away from the single-pole double-throw switch of the triode to be detected in the single sampling with the larger voltage difference value, is the collector of the triode, and the pin corresponding to the other unknown branch is the emitter of the triode.
It should be noted that, step 2.1.2 to step 2.1.3 or step 2.2.2 to step 2.2.3 are to respectively adopt the same switching manner to the two unknown branches and record the voltage, so the execution sequence of the two unknown branches has no sequential requirement, this embodiment only describes one of the feasible manners, and the remaining execution sequence still belongs to the protection scope of this application.
In one embodiment, after the triode to be tested is determined to be an NPN type triode in step 1.6 and the base is located in the branch, if the voltage difference between the voltage of the branch where the base is located and the voltage difference between the other two branches is 0.7V at most (since the voltage difference fluctuates, it is understood that the voltage difference is about 0.7V), the triode is a silicon tube; if the voltage of the branch where the electrode is located and the voltage difference between the other two branches are 0.3V at most (because the voltage difference fluctuates, it should be understood that the voltage difference is about 0.3V), the triode is a germanium tube.
After the triode to be tested is judged to be a PNP type triode and the branch of the base electrode, if the maximum voltage difference between the voltage of the branch of the base electrode and the voltage of the branch corresponding to the contact A of the single-pole double-throw switch far away from the triode to be tested is 0.7V, the triode is a silicon tube; if the maximum voltage difference between the voltage of the branch where the high-level time base electrode is located and the voltage of the branch corresponding to the A contact of the single-pole double-throw switch far away from the triode to be tested at the moment is 0.3V, the triode is a germanium tube.
When the triode is PNP type, three voltages in two times exist in the three times of sampling in the step 1.3-1.5, and are all high levels, so the maximum voltage difference of the branch voltage when the branch where the base electrode is located and the current single-pole double-throw switch are switched to the contact A needs to be calculated, and if the larger value of the two voltage differences is about 0.7V, the triode is a silicon tube; if the larger of the two voltage differences is about 0.3V, the tube is made of silicon.
For example, if the first branch is a base, when the second branch is far from the spd S5 of the transistor and is switched to the a contact, the voltage difference between the first branch and the second branch is taken as V1, and when the third branch is far from the spd S6 of the transistor and is switched to the a contact, the voltage difference between the first branch and the third branch is taken as V2. If the larger value of the two voltage differences of V1 and V2 is about 0.7V, the triode to be tested is a silicon tube, and if the larger value of the two voltage differences of V1 and V2 is about 0.3V, the triode to be tested is a germanium tube.
According to the judgment method provided by the embodiment, the type and the pin of the triode can be obtained by sampling the voltage for multiple times, and the judgment method is simple and high in accuracy. It is easy to understand that, in the judging method, if the judging circuit based on the voltage is a mechanical single-pole double-throw switch and the main control chip only displays the voltage on the display circuit, the single-pole double-throw switch needs to be manually switched when the triode is judged, and the triode judging result is manually obtained according to the voltage displayed by the final display circuit and the judging logic; if the judgment circuit based on the judgment adopts a single-pole double-throw switch relay and the main control chip operates the judgment method, the single-pole double-throw switch relay is automatically switched after the judgment circuit works, and the judgment result of the triode is displayed on the display circuit so as to realize automatic judgment.
The technical features of the embodiments described above may be arbitrarily combined, and for the sake of brevity, all possible combinations of the technical features in the embodiments described above are not described, but should be considered as being within the scope of the present specification as long as there is no contradiction between the combinations of the technical features.
The above-mentioned embodiments only express several embodiments of the present application, and the description thereof is more specific and detailed, but not construed as limiting the scope of the invention. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the concept of the present application, which falls within the scope of protection of the present application. Therefore, the protection scope of the present patent shall be subject to the appended claims.
Claims (8)
1. The type and pin judgment circuit of the triode is characterized by comprising a singlechip control circuit, a detection circuit and a display circuit, wherein the detection circuit and the display circuit are connected with the singlechip control circuit; the detection circuit comprises a first branch, a second branch and a third branch which are respectively connected with three pins of the triode to be detected;
the first branch comprises a single-pole double-throw switch S1, a single-pole double-throw switch S4, a resistor R1 and a resistor R4, a common contact of the single-pole double-throw switch S1 serves as a first sampling point connected with one pin of a triode to be tested, an A contact of the single-pole double-throw switch S1 is connected with a common contact of the single-pole double-throw switch S4 through a resistor R1, a B contact of the single-pole double-throw switch S1 is directly connected with a common contact of the single-pole double-throw switch S4, an A contact of the single-pole double-throw switch S4 is connected with VCC, a B contact of the single-pole double-throw switch S4 is grounded through the resistor R4, and the first sampling point is connected to the singlechip control circuit;
the second branch comprises a single-pole double-throw switch S2, a single-pole double-throw switch S5, a resistor R2 and a resistor R5, a common contact of the single-pole double-throw switch S2 serves as a second sampling point connected with the other pin of the triode to be tested, an A contact of the single-pole double-throw switch S2 is connected with a common contact of the single-pole double-throw switch S5 through a resistor R2, a B contact of the single-pole double-throw switch S2 is directly connected with a common contact of the single-pole double-throw switch S5, an A contact of the single-pole double-throw switch S5 is connected with VCC, a B contact of the single-pole double-throw switch S5 is grounded through a resistor R5, and the second sampling point is connected to the singlechip control circuit;
the third branch comprises a single-pole double-throw switch S3, a single-pole double-throw switch S6, a resistor R3 and a resistor R6, a common contact of the single-pole double-throw switch S3 serves as a third sampling point connected with the last pin of the triode to be tested, an A contact of the single-pole double-throw switch S3 is connected with the common contact of the single-pole double-throw switch S6 through a resistor R3, a B contact of the single-pole double-throw switch S3 is directly connected with the common contact of the single-pole double-throw switch S6, the A contact of the single-pole double-throw switch S6 is connected with VCC, a B contact of the single-pole double-throw switch S6 is grounded through the resistor R6, and the third sampling point is connected to the singlechip control circuit;
and the singlechip control circuit acquires the voltages of the first sampling point, the second sampling point and the third sampling point and displays the voltages through the display circuit.
2. The type and pin determination circuit of a triode of claim 1, wherein the single-pole double-throw switch is a single-pole double-throw switch relay, and the single chip control circuit is connected with a control terminal of the single-pole double-throw switch relay.
3. The type and pin determination circuit of a transistor of claim 2, wherein the single pole double throw switching relay is of the SRD-05VDC-SL-C type.
4. The type and pin determination circuit of a triode of claim 1, wherein the single chip microcomputer control circuit comprises a main control chip, and the first sampling point, the second sampling point and the third sampling point are respectively connected with an ADC pin of the main control chip.
5. The type and pin determination circuit of claim 4, wherein the master control chip is of the type STM32F407VGT 6.
6. The transistor type and pin determination circuit of claim 1, wherein the display circuit comprises a display screen of type TFTLCD.
7. A method for judging the type and the pin of a triode is realized based on the circuit for judging the type and the pin of the triode of any one of claims 1 to 6, and the method for judging the type and the pin of the triode comprises the following steps:
step 1, judging the type and base of a triode;
1.1, resetting all single-pole double-throw switches to a contact B;
step 1.2, respectively connecting three pins of a triode to be tested to a common contact of a single-pole double-throw switch S1, a common contact of a single-pole double-throw switch S2 and a common contact of a single-pole double-throw switch S3;
step 1.3, controlling the single-pole double-throw switch S4 to switch to the contact A, recording the voltages of a first sampling point, a second sampling point and a third sampling point, and finishing the first sampling;
step 1.4, controlling the single-pole double-throw switch S4 to recover to a contact B, simultaneously controlling the single-pole double-throw switch S5 to switch to the contact A, recording the voltages of a first sampling point, a second sampling point and a third sampling point, and finishing second sampling;
step 1.5, controlling the single-pole double-throw switch S5 to recover to a contact B, simultaneously controlling the single-pole double-throw switch S6 to switch to the contact A, recording the voltages of the first sampling point, the second sampling point and the third sampling point, and finishing the third sampling;
step 1.6, judging the type and the base position of the triode according to the recorded voltage value:
if three voltages sampled at one time are all high levels in the three-time sampling, and the other three voltages sampled at the two times are one high level and two low levels, the triode to be tested is judged to be an NPN type triode, and the pin of the triode connected with the branch of the single-pole double-throw switch positioned at the contact A is the base electrode of the triode when the three voltages are all high levels;
if three voltages sampled twice are high levels in the three-time sampling, and the other three voltages sampled twice are a high level and two low levels, the triode to be tested is judged to be a PNP type triode, and the pin of the triode connected with the branch of the single-pole double-throw switch positioned at the contact A is the base electrode of the triode when the three voltages are the high level and the two low levels;
otherwise, judging that the triode is damaged or not connected;
step 2, judging an emitter and a collector of the triode;
step 2.1, if the triode to be tested is judged to be an NPN type triode in the step 1, judging an emitter and a collector of the triode as follows:
step 2.1.1, taking a branch where a base electrode of the triode is located as a known branch, taking the other two branches as unknown branches, switching two single-pole double-throw switches on the known branches to a contact A, and recovering the single-pole double-throw switches on the two unknown branches to a contact B;
2.1.2, dividing the two unknown branches into a first unknown branch and a second unknown branch, switching a single-pole double-throw switch on the first unknown branch, which is far away from the triode to be tested, to a contact A, recording the voltages of sampling points on the first unknown branch and the second unknown branch, and completing fourth sampling;
step 2.1.3, restoring the single-pole double-throw switch on the first unknown branch far away from the triode to be tested to a contact B, simultaneously switching the single-pole double-throw switch on the second unknown branch far away from the triode to be tested to a contact A, recording the voltages of sampling points on the second unknown branch and the first unknown branch, and completing fifth sampling;
step 2.1.4, calculating the voltage difference value of two sampling points of single sampling in the fourth sampling and the fifth sampling, wherein the pin corresponding to the unknown branch, which is positioned at the contact A and far away from the single-pole double-throw switch of the triode to be detected in the single sampling with the larger voltage difference value, is the emitting electrode of the triode, and the pin corresponding to the other unknown branch is the collecting electrode of the triode;
step 2.2, if the triode to be tested is judged to be the PNP type triode in the step 1, judging an emitting electrode and a collecting electrode of the triode as follows:
step 2.2.1, taking the branch of the base electrode of the triode as a known branch, taking the other two branches as unknown branches, switching the single-pole double-throw switch on the known branch close to the triode to be tested to the contact A, recovering the single-pole double-throw switch far away from the triode to be tested to the contact B, and recovering the single-pole double-throw switches on the two unknown branches to the contact B;
2.2.2, dividing the two unknown branches into a first unknown branch and a second unknown branch, switching a single-pole double-throw switch on the first unknown branch, which is far away from the triode to be tested, to a contact A, recording the voltages of sampling points on the first unknown branch and the second unknown branch, and completing fourth sampling;
2.2.3, restoring the single-pole double-throw switch on the first unknown branch far away from the triode to be tested to a contact B, simultaneously switching the single-pole double-throw switch on the second unknown branch far away from the triode to be tested to a contact A, recording the voltages of sampling points on the second unknown branch and the first unknown branch, and completing fifth sampling;
and 2.2.4, calculating the voltage difference value of two sampling points of single sampling in the fourth sampling and the fifth sampling, wherein the pin corresponding to the unknown branch, which is positioned at the contact A and far away from the single-pole double-throw switch of the triode to be detected in the single sampling with the larger voltage difference value, is the collector of the triode, and the pin corresponding to the other unknown branch is the emitter of the triode.
8. The method according to claim 7, wherein after determining that the transistor to be tested is an NPN transistor and the branch of the base electrode is located in step 1.6, if the voltage of the branch of the base electrode where the three voltages are high and the voltage difference between the other two branches is 0.7V at most, the transistor is a silicon transistor; if the voltage of the branch where the high-level time base electrode is located and the maximum voltage difference between the other two branches is 0.3V, the triode is a germanium tube;
after the triode to be tested is judged to be a PNP type triode and the branch of the base electrode, if the maximum voltage difference between the voltage of the branch of the base electrode and the voltage of the branch corresponding to the contact A of the single-pole double-throw switch far away from the triode to be tested is 0.7V, the triode is a silicon tube; if the maximum voltage difference between the voltage of the branch where the high-level time base electrode is located and the voltage of the branch corresponding to the A contact of the single-pole double-throw switch far away from the triode to be tested at the moment is 0.3V, the triode is a germanium tube.
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