CN112542682A - Decoupling dual-polarization low-frequency oscillator and embedded dual-band array antenna - Google Patents

Decoupling dual-polarization low-frequency oscillator and embedded dual-band array antenna Download PDF

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Publication number
CN112542682A
CN112542682A CN202011380549.XA CN202011380549A CN112542682A CN 112542682 A CN112542682 A CN 112542682A CN 202011380549 A CN202011380549 A CN 202011380549A CN 112542682 A CN112542682 A CN 112542682A
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China
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frequency
oscillator
low
arm
balun
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CN202011380549.XA
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Chinese (zh)
Inventor
丁灿
贺怡
魏庚明
郭英杰
吴中林
刘木林
岳彩龙
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Tongyu Communication Inc
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Tongyu Communication Inc
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Priority to CN202011380549.XA priority Critical patent/CN112542682A/en
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01QANTENNAS, i.e. RADIO AERIALS
    • H01Q1/00Details of, or arrangements associated with, antennas
    • H01Q1/36Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01QANTENNAS, i.e. RADIO AERIALS
    • H01Q1/00Details of, or arrangements associated with, antennas
    • H01Q1/12Supports; Mounting means
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01QANTENNAS, i.e. RADIO AERIALS
    • H01Q1/00Details of, or arrangements associated with, antennas
    • H01Q1/50Structural association of antennas with earthing switches, lead-in devices or lightning protectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01QANTENNAS, i.e. RADIO AERIALS
    • H01Q1/00Details of, or arrangements associated with, antennas
    • H01Q1/52Means for reducing coupling between antennas; Means for reducing coupling between an antenna and another structure
    • H01Q1/521Means for reducing coupling between antennas; Means for reducing coupling between an antenna and another structure reducing the coupling between adjacent antennas
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01QANTENNAS, i.e. RADIO AERIALS
    • H01Q21/00Antenna arrays or systems
    • H01Q21/06Arrays of individually energised antenna units similarly polarised and spaced apart
    • H01Q21/08Arrays of individually energised antenna units similarly polarised and spaced apart the units being spaced along or adjacent to a rectilinear path

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Abstract

The invention discloses a decoupling dual-polarization low-frequency oscillator and an embedded dual-band array antenna, which belong to the technical field of communication. According to the invention, by adjusting the parameters of the microstrip decoupling circuit board, the induced current on the low-frequency oscillator arm can generate the minimum value, so that the negative influence on the high-frequency array inside and outside the cavity of the low-frequency oscillator is greatly reduced; meanwhile, the electric size of the whole antenna array is reduced, miniaturization is realized, and the stability is strong.

Description

Decoupling dual-polarization low-frequency oscillator and embedded dual-band array antenna
Technical Field
The invention relates to the technical field of communication, in particular to a decoupling dual-polarized low-frequency oscillator and an embedded dual-band array antenna.
Background
With the development of mobile communication technology and the increasing demand for miniaturization of systems, a plurality of antennas operating in different frequency bands are often integrated on a communication platform to meet different communication standards. Due to the size compression, antennas operating in different frequency bands are increasingly spaced apart, resulting in greater and greater coupling between each other. How to reduce the coupling of antennas of different frequency bands in this case becomes a key issue in the development of antenna arrays in the present stage.
In engineering design, taking a base station antenna as an example, as shown in fig. 1, a conventional reliable method is a dual-band nested structure. In design, the antenna operating at the higher frequency band may be placed within the cavity of the antenna operating at the lower frequency band, minimizing the interaction of the high and low frequency antennas. However, the nested structure can only reduce the influence of the low-frequency oscillator on the high-frequency oscillator inside the cavity, and the negative influence of the high-frequency oscillator outside the low-frequency oscillator cavity is still large. Therefore, there is a need for a new low frequency array with filtering characteristics that reduces the negative impact on the high frequency array inside and outside the cavity, thereby facilitating the design of small-sized, dual-band antenna arrays.
Disclosure of Invention
The technical problem to be solved by the invention is as follows: the decoupling dual-polarized low-frequency oscillator is provided, and the negative effects on high-frequency arrays in and out of a cavity are greatly reduced; meanwhile, the embedded dual-band array antenna is provided, the electric size of the whole antenna array can be reduced, miniaturization is realized, and the stability is strong.
A decoupling dual-polarization low-frequency oscillator comprises four dual-polarization orthogonal oscillator radiating bodies, wherein each oscillator radiating body comprises two oscillator arms and a balun, the two oscillator arms are symmetrically arranged relative to the balun, the balun comprises two balun arms which are arranged in a split mode in parallel, the top ends of the two balun arms are respectively connected with the oscillator arms corresponding to the balun arms, the bottom ends of the two balun arms are connected with a base together, each oscillator arm is cut into two oscillator arm sub-units, the two oscillator arm sub-units are arranged at intervals, and a first microstrip decoupling circuit board is connected between the two oscillator arm sub-units; each balun arm is cut into two balun arm subunits, the two balun arm subunits are arranged at intervals, and a second microstrip decoupling circuit board is connected between the two balun arm subunits; and a feed sheet is connected between the two oscillator arm subunits at the middle position of each oscillator radiator.
Furthermore, the electrical size of each of the oscillator arm subunit and the balun arm subunit is smaller than the corresponding half wavelength at the highest frequency point of the working frequency band of the high-frequency oscillator integrated on the same reflector.
Furthermore, the four dipole arm sub-units on each dipole radiator are distributed in central symmetry with respect to the balun, and the four balun arm sub-units on each dipole radiator are distributed in central symmetry with respect to the longitudinal axis of the balun.
Furthermore, a microstrip decoupling structure is printed on one side of the first microstrip decoupling circuit board, and the other side of the first microstrip decoupling circuit board is tightly attached to the two truncated vibrator arm subunits; one side of the second microstrip decoupling circuit board is printed with a microstrip decoupling structure, and the other side of the second microstrip decoupling circuit board is tightly attached to the two cut balun arm subunits.
Further, the microstrip decoupling structure comprises a meander line equivalent to a parallel circuit of an inductor L1 and a capacitor C1, and microstrip lines equivalent to a series capacitor C2 located on both sides of the meander line.
Further, the serpentine line is S-shaped, and the equivalent inductance L1 and capacitance C1 are varied by the parameters of the serpentine line such that the induced current produces a minimum amplitude in the high frequency band.
Furthermore, the oscillator arm subunit, the balun arm subunit, the first microstrip decoupling circuit board and the second microstrip decoupling circuit board are all fixed on the medium support frame through medium screws.
Furthermore, the medium support frame comprises an annular fixing frame and four supporting legs uniformly distributed below the fixing frame, the two balun arms of each oscillator radiator are arranged on the left side and the right side of each supporting leg, and the oscillator arms are arranged on the periphery of the fixing frame.
An embedded dual-band array antenna comprises a reflector, a low-frequency array and a high-frequency array, wherein the low-frequency array and the high-frequency array are arranged on the reflector, at least one low-frequency oscillator and at least one high-frequency oscillator are correspondingly arranged on the low-frequency array and the high-frequency array, the low-frequency oscillator is any one of the decoupling dual-polarization low-frequency oscillator, and a high-frequency oscillator is embedded in the low-frequency oscillator.
Furthermore, a high-frequency oscillator is arranged between every two adjacent low-frequency oscillators, and the high-frequency oscillators inside and outside the low-frequency oscillators form a high-frequency array together.
Furthermore, the low-frequency oscillators in each low-frequency array and the high-frequency oscillators in each high-frequency array are linearly arranged at equal intervals of 0.5-1 times of the wavelength of the center frequency of the working frequency band.
Furthermore, the reflectors of the high-frequency vibrators positioned inside the low-frequency vibrators are arranged above the base, and the reflectors of the high-frequency vibrators positioned inside and outside the low-frequency vibrators are not in contact with the low-frequency vibrators.
Furthermore, the high-frequency oscillator comprises a box-shaped reflector, two mutually vertical medium supporting plates and a medium plate horizontally placed on the medium supporting plates; the medium support is vertically arranged on the box-shaped reflector, the microstrip balun structure is printed on the two sides of the medium support plate, and two radiator vibrator pairs which are perpendicular to each other are printed on the medium plate.
The invention has the following beneficial effects:
1. according to the decoupling dual-polarization low-frequency oscillator, the oscillator arm and the balun are cut into four parts and arranged at intervals for the first time, and a micro-strip decoupling circuit is innovatively introduced, so that the influence of the micro-strip decoupling circuit on S parameters and directional diagrams of high-frequency oscillators inside and outside a low-frequency oscillator cavity is greatly reduced in an embedded dual-band array.
2. A meander line on the microstrip decoupling circuit board forms a high-frequency-band parallel resonant circuit, so that the effect of inhibiting the induced current on the low-frequency oscillator is achieved; two sections of microstrip lines on two sides form a low-frequency-band series resonance circuit so as to ensure that the radiation of the low-frequency oscillator is not influenced. The induced current amplitude of the low-frequency oscillator on the high-frequency section can be reduced to the lowest value by designing the parameters of the meandering line on the microstrip decoupling circuit board, so that the influence of the low-frequency oscillator on the high-frequency oscillator is reduced.
3. The cut-off low-frequency oscillator arm, the balun and the microstrip decoupling circuit board are fixed on the medium support frame through medium screws, and the stability of the low-frequency oscillator assembly is guaranteed.
4. The antenna can reduce the electric size of the whole antenna, realize miniaturization and has good function of inhibiting cross polarization of the antenna.
Drawings
Fig. 1 is a schematic diagram of an embedded dual-band array antenna arrangement;
FIG. 2 is a schematic diagram of the structure of the details of the antenna portion of the embedded dual band array of the present invention;
FIG. 3 is a schematic diagram of the structure of the low frequency oscillator of the present invention;
FIG. 4 is a schematic structural view of the stand of the present invention;
FIG. 5 is a block diagram of a microstrip decoupling circuit board;
FIG. 6 is an equivalent circuit diagram of a microstrip decoupling circuit board;
FIG. 7 is a graph showing the comparison of the magnitude of the induced current on the horn of the low frequency oscillator of the prior art and the low frequency oscillator of the present invention;
fig. 8A is a schematic diagram showing a simulation of a radiation pattern at a frequency point of 1.7GHZ when a conventional low-frequency oscillator is placed around a high-frequency oscillator;
FIG. 8B is a schematic diagram showing a simulated radiation pattern at a frequency point of 1.7GHz when the low-frequency vibrator of the present invention is placed around the high-frequency vibrator;
fig. 9A is a schematic diagram showing a simulation of a radiation pattern at a frequency point of 2.2GHZ when a conventional low-frequency oscillator is placed around a high-frequency oscillator;
FIG. 9B is a schematic diagram showing a simulated radiation pattern at a frequency point of 2.2GHz when the low-frequency vibrator of the present invention is placed around the high-frequency vibrator;
fig. 10A is a schematic diagram showing a simulation of a radiation pattern at a frequency point of 2.7GHZ when a conventional low-frequency oscillator is placed around a high-frequency oscillator;
fig. 10B is a schematic diagram showing a simulation of a radiation pattern at a frequency point of 2.7GHZ when the low-frequency transducer of the present invention is placed around the high-frequency transducer.
Reference numerals: 1. the reflector comprises a reflector, 2, a low-frequency array, 3, a high-frequency array, 4, a low-frequency oscillator and 5, a high-frequency oscillator; 41a, a first oscillator radiator, 41b, a second oscillator radiator, 41c, a third oscillator radiator, 41d, a fourth oscillator radiator, 41e, a base, 42a, a first oscillator arm subunit, 42b, a second oscillator arm subunit, 42c, a third oscillator arm subunit, 42d, a fourth oscillator arm subunit, 42e, a feed tab, 42f, a preset through hole, 43a, a first microstrip decoupling circuit board, 43b, a circular through hole, 44a, a first balun arm subunit, 44b, a second balun arm subunit, 44c, a third balun arm subunit, 44d, a fourth balun arm subunit, 45a, a second microstrip decoupling circuit board, 46, a support frame, 47a, a meander line, 47b, a first microstrip line, 47c, and a second microstrip line; 51. box-shaped reflector, 52 dielectric plate, 53 dielectric support plate.
Detailed Description
The invention is described in further detail below with reference to the figures and the embodiments.
Fig. 1 schematically shows an arrangement of an embedded dual band array antenna, comprising a reflector 1 and an array of low frequency arrays 2 and an array of high frequency arrays 3 arranged on the reflector. The low-frequency array 2 and the high-frequency array 3 are correspondingly provided with at least two low-frequency vibrators 4 and at least two high-frequency vibrators 5. The low-frequency array 2 and the high-frequency array 3 are distributed in an embedded mode, preferably, the high-frequency vibrators 5 are embedded into the low-frequency vibrators 4 at intervals, namely, one high-frequency vibrator 5 is arranged between every two adjacent low-frequency vibrators 4, and the high-frequency vibrators 5 inside and outside the low-frequency vibrators 4 jointly form the high-frequency array 3. The distance between the adjacent low-frequency vibrators 4 in the low-frequency array 2 is twice the distance between the adjacent high-frequency vibrators 5 in the high-frequency array 3. The low-frequency vibrators 4 in each low-frequency array 2 and the high-frequency vibrators 5 in each high-frequency array 3 are linearly arranged at equal intervals of 0.5-1 times of the central frequency wavelength of the working frequency band.
The low-frequency element 4 and the high-frequency element 5 can be applied to a multiband dual-polarized cellular base station antenna. Optionally, the low frequency array 2 operates in the 698-960 MHz frequency band; the high-frequency array 3 works in the 1710-2690 MHz frequency band. The invention is not limited to these particular frequency bands and may be used in other multi-band configurations.
Fig. 2 schematically shows a part of an embedded dual band array antenna according to an embodiment of the present invention, comprising a reflector 1 and one low frequency element 4 and two high frequency elements 5 arranged on the reflector 1. One of the high-frequency oscillators 5 is placed above a base 41e inside the low-frequency oscillator 4, and the other is placed outside the low-frequency oscillator 4. The reflectors of the high frequency vibrator 5 located inside and outside the low frequency vibrator 4 are not in contact with the low frequency vibrator 4.
As shown in fig. 2, the high frequency vibrator 5 placed inside and outside the low frequency vibrator 4 is identical. The high-frequency oscillator 5 includes a box-shaped reflector 51, a horizontally disposed dielectric plate 52, and two dielectric support plates 53 perpendicular to each other. The horizontally disposed dielectric slab 52 has two orthogonal pairs of radiator elements printed thereon for providing two polarized radiations. The two mutually perpendicular dielectric support plates 53 are printed with microstrip balun structures on both sides, have the functions of balancing current and impedance transformation, and are used for balanced feeding of the two radiator oscillator pairs. It should be noted that the selection of the high-frequency oscillator in the present invention is not limited to the one of the present embodiments.
As shown in fig. 2, the low frequency element 4 includes four identical element radiators: a first oscillator radiator 41a, a second oscillator radiator 41b, a third oscillator radiator 41c, and a fourth oscillator radiator 41d. Wherein the first and third dipole radiators 41a, 41c provide radiation of one polarization and the second and fourth dipole radiators 41b, 41d provide radiation of the other polarization, the two polarization directions being perpendicular to each other. Each oscillator radiator corresponds to two oscillator arms, one balun, one feed piece and four microstrip decoupling circuit boards, the two oscillator arms are symmetrically arranged at intervals around the balun, the balun comprises two balun arms which are arranged in a split mode in parallel, and the top ends of the two balun arms are connected with the oscillator arms corresponding to the balun arms respectively. The lower ends of the baluns are connected together to a hollow cylindrical base 41e.
Fig. 3 shows a more detailed assembly structure of the low frequency oscillator 4, and fig. 4 shows a structure of the supporting frame. Taking the first oscillator radiator 41a as an example, each oscillator arm is divided into two oscillator arm sub-units, that is, the oscillator arm of the first oscillator radiator 41a is divided into four parts: the four truncated oscillator arm subunits of the first oscillator arm subunit 42a, the second oscillator arm subunit 42b, the third oscillator arm subunit 42c and the fourth oscillator arm subunit 42d are distributed in central symmetry with respect to the balun. The first oscillator arm subunit 42a and the fourth oscillator arm subunit 42d are completely the same, the second oscillator arm subunit 42b and the third oscillator arm subunit 42c are completely the same, and the electrical lengths of the four parts are all smaller than the half wavelength at the highest frequency point in the working frequency band of the high-frequency oscillator, so as to reduce the influence on the high-frequency oscillator.
The third dipole arm sub-unit 42c has a predetermined through hole 42f for passing the coaxial feed line. The second and third oscillator arm sub-units 42b and 42c are connected to a feed tab 42e, one end of the feed tab 42e is connected to the second oscillator arm sub-unit 42b, and the other end is connected to the inner conductor of the coaxial feed line.
The two oscillator arm subunits of each oscillator arm are fixedly connected through a first microstrip decoupling circuit board 43a. One side of the first microstrip decoupling circuit board 43a is printed with a microstrip decoupling structure, and the other side is tightly attached to the two truncated oscillator arm subunits. The left edge and the right edge of the first microstrip decoupling circuit board 43a are provided with circular through holes 43b for passing through dielectric screws. Each first microstrip decoupling circuit board 43a and the corresponding dipole arm subunit are fixed on the dielectric support frame 46 by dielectric screws.
As shown in fig. 3, the balun corresponding to each dipole radiator is divided into four balun arm sub-units, and the four balun arm sub-units located in the same dipole radiator are distributed in central symmetry with respect to the longitudinal axis of the balun. Taking the first oscillator radiator 41a as an example, the balun is divided into four parts: a first balun arm subunit 44a, a second balun arm subunit 44b, a third balun arm subunit 44c and a fourth balun arm subunit 44d. The first balun arm subunit 44a and the fourth balun arm subunit 44d are identical, and the second balun arm subunit 44b and the third balun arm subunit 44c are identical. Similarly, the electrical lengths of the four parts are all smaller than half wavelength at the highest frequency point in the working frequency band of the high-frequency oscillator, so that the influence on the high-frequency oscillator is reduced.
Two balun arm subunits which are cut off on the same balun arm are fixedly connected through a second microstrip decoupling circuit board 45a. One side of the second microstrip decoupling circuit board 45a is printed with a microstrip decoupling structure, and the other side is tightly attached to two balun arm subunits on the same balun arm. The second microstrip decoupling circuit board 45a and the truncated balun arm subunit are fixed on the dielectric support frame 46 by dielectric screws. The first balun arm subunit 44a and the fourth balun arm subunit 44d are respectively connected to the second vibrator arm subunit 42b and the third vibrator arm subunit 42c at the upper ends thereof, and are connected to the hollow cylindrical base 41e at the lower ends thereof.
As shown in fig. 4, the medium holder 46 is supported by the reflector 1, and is shaped to fit the low frequency oscillator 4, and can be manufactured by 3D printing. When the printing material of the medium support frame is determined, relevant parameters of the low-frequency oscillator are readjusted according to the dielectric constant and the loss tangent of the material to realize impedance matching. The through holes in the corresponding positions on the support frame are used for supporting and fixing the cut-off vibrator arms, the balun and the microstrip decoupling circuit board through the medium screws, and the stability of the low-frequency vibrator assembly is ensured. In specific implementation, two balun arms of each oscillator radiator are arranged on the left side and the right side of the supporting leg of the supporting frame 46, and the oscillator arms are arranged on the periphery of the annular fixing frame of the supporting frame 46.
Fig. 5 and 6 show the structure and equivalent circuit diagram of the microstrip decoupling circuit board. The microstrip decoupling structure includes a segment of a meandering line 47a and a first microstrip line 47b and a second microstrip line 47c located on both sides of the meandering line 47a. The meandering line 47a constitutes a parallel resonant circuit having a filter function, and is equivalent to the inductance L1 being connected in parallel with the capacitance C1. When the circuit is excited with a plane wave, the induced current will produce an amplitude minimum in the high frequency band. By adjusting the parameters s, d and g of the meandering line, the equivalent inductance L1 and capacitance C1 can be changed, thereby adjusting the parallel resonance point and the induced current rejection bandwidth. The meandering line is "S" shaped as a whole, wherein g denotes a length of an area covered by the meandering line on the circuit board, S denotes a length of a vertical bending portion of the meandering line from the first microstrip line 47b, and d denotes a distance between two adjacent horizontal bending portions. For the low-frequency element antenna, the inductance is increased by introducing the meander line structure, in this example, capacitance is generated between the first microstrip line 47b and the second microstrip line 47C on both sides of the microstrip decoupling circuit board and the corresponding truncated oscillator arm subunit, which is equivalent to C2 in the circuit diagram, and is used for offsetting the inductance introduced by the meander line structure and improving the impedance matching of the low-frequency element antenna.
Preferably, in this embodiment, the values of the inductance L1 and the capacitance C1 of the parallel resonance are changed by changing the parameters s, d, and g of the meandering line, so that the induced current on the low-frequency oscillator arm forms parallel resonance near the central frequency point of the operating frequency band of the high-frequency oscillator, and the minimum value of the amplitude of the induced current is generated, thereby reducing the induced current generated on the low-frequency oscillator arm when the high-frequency oscillator operates, and ensuring that the influence of the low-frequency oscillator on the performance of the high-frequency oscillator is minimized.
Fig. 7 is a comparison graph of the amplitude of the induced current on the oscillator arm of the low-frequency oscillator adopting the prior art and the low-frequency oscillator adopting the present invention in the plane wave excitation state, wherein the low-frequency oscillator of the prior art refers to a low-frequency oscillator in which the oscillator arm is not cut off and a microstrip decoupling circuit structure is not introduced. In the figure, m refers to the amplitude of an induced current on a vibrator arm of the low-frequency vibrator adopting the prior art; n is the amplitude of the induced current on the oscillator arm of the low-frequency oscillator adopting the invention. From the results, the induced current on the low-frequency oscillator arm introduced into the microstrip decoupling circuit structure is significantly lower than the induced current on the unaltered low-frequency oscillator arm.
Fig. 8A and 8B are front and rear comparisons of radiation patterns at the frequency point of 1.7GHZ when a conventional low-frequency vibrator of the related art and a low-frequency vibrator of the present invention are placed around a high-frequency vibrator, respectively.
Fig. 9A and 9B are front and rear comparisons of radiation patterns at a 2.2GHZ frequency point when a conventional low frequency vibrator of the related art and a low frequency vibrator of the present invention are placed around a high frequency vibrator, respectively.
Fig. 10A and 10B show a front-to-back comparison of radiation patterns at the 2.7GHZ frequency point when a conventional low-frequency oscillator of the prior art and a low-frequency oscillator of the present invention are placed around the high-frequency oscillator, respectively.
From the comparison result, when the decoupled dual-polarized low-frequency oscillator is placed around the high-frequency oscillator, the directional diagrams of the three frequency points are obviously improved.
It should be noted that the low-frequency oscillators shown in fig. 2 and 3 are only one embodiment, and for other low-frequency oscillators with similar structures and affecting the S-parameters and directional diagrams of the high-frequency oscillators in the base station array, the microstrip decoupling filter circuit provided in the present invention can achieve suppression of the induced current on the low-frequency oscillator unit in the array by means of trimming the structure of the microstrip decoupling filter circuit and designing the microstrip decoupling filter circuit in combination with the specific low-frequency oscillator, so as to reduce the effect on the high-frequency oscillator. The low-frequency oscillator used in the present embodiment is only one specific example.
It should be understood that the structures, ratios, sizes, and the like shown in the drawings are only used for matching the disclosure of the present disclosure, and are not used for limiting the conditions that the present disclosure can be implemented, so that the present disclosure is not technically significant, and any structural modifications, ratio changes or size adjustments should still fall within the scope of the present disclosure without affecting the efficacy and the achievable purpose of the present disclosure.
While the invention has been described with reference to specific embodiments, it will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention as defined by the appended claims.

Claims (13)

1. The utility model provides a dual polarization low frequency oscillator decouples, includes four oscillator irradiators of dual polarization quadrature, and every oscillator irradiator includes two oscillator arms and a balun, two oscillator arms set up about balun symmetry, the balun is including two balun arms that divide the body to arrange side by side, and two balun arm tops are connected with the oscillator arm that corresponds with it respectively, and a base, its characterized in that are connected jointly to the bottom: each vibrator arm is cut off into two vibrator arm subunits, the two vibrator arm subunits are arranged at intervals, and a first microstrip decoupling circuit board is connected between the two vibrator arm subunits; each balun arm is cut into two balun arm subunits, the two balun arm subunits are arranged at intervals, and a second microstrip decoupling circuit board is connected between the two balun arm subunits; and a feed sheet is connected between the two oscillator arm subunits at the middle position of each oscillator radiator.
2. A decoupled dual polarized low frequency oscillator according to claim 1, characterized in that: the electrical size of the oscillator arm subunit and the electrical size of the balun arm subunit are both smaller than the corresponding half wavelength at the highest frequency point of the working frequency band of the high-frequency oscillator integrated on the same reflector.
3. A decoupled dual polarized low frequency oscillator according to claim 2, characterized in that: the four oscillator arm subunits on each oscillator radiator are in central symmetry distribution with respect to the balun, and the four balun arm subunits on each oscillator radiator are in central symmetry distribution with respect to the longitudinal axis of the balun.
4. A decoupled dual polarized low frequency oscillator according to claim 2, characterized in that: one side of the first microstrip decoupling circuit board is printed with a microstrip decoupling structure, and the other side of the first microstrip decoupling circuit board is tightly attached to the two truncated vibrator arm subunits; one side of the second microstrip decoupling circuit board is printed with a microstrip decoupling structure, and the other side of the second microstrip decoupling circuit board is tightly attached to the two cut balun arm subunits.
5. A decoupled dual polarized low frequency oscillator according to claim 4, characterized in that: the microstrip decoupling structure comprises a meandering line equivalent to a parallel circuit of an inductor L1 and a capacitor C1, and microstrip lines equivalent to a series capacitor C2 positioned on two sides of the meandering line.
6. A decoupled dual polarized low frequency oscillator according to claim 5, characterized in that: the serpentine is S-shaped, and the equivalent inductance L1 and capacitance C1 are varied by tailoring the parameters of the serpentine such that the induced current produces a minimum in amplitude over a high frequency band.
7. A decoupled dual polarized low frequency oscillator according to claim 1, characterized in that: the oscillator arm subunit, the balun arm subunit, the first microstrip decoupling circuit board and the second microstrip decoupling circuit board are all fixed on the medium support frame through medium screws.
8. A decoupled dual polarized low frequency oscillator according to claim 6, characterized in that: the medium support frame comprises an annular fixing frame and four supporting legs uniformly distributed below the fixing frame, the left side and the right side of each supporting leg are arranged on two balun arms of each oscillator radiator, and the oscillator arms are arranged on the periphery of the fixing frame.
9. The utility model provides an embedded dual-band array antenna, includes the reflector, locates low frequency array and high frequency array on the reflector, low frequency array and high frequency array correspond and set up at least one low frequency oscillator and at least one high frequency oscillator, its characterized in that: the low-frequency oscillator is a decoupled dual-polarized low-frequency oscillator as claimed in any one of claims 1 to 8, and a high-frequency oscillator is embedded in the low-frequency oscillator.
10. The embedded dual band array antenna of claim 9, wherein: a high-frequency oscillator is arranged between every two adjacent low-frequency oscillators, and the high-frequency oscillators inside and outside the low-frequency oscillators form a high-frequency array together.
11. The embedded dual band array antenna of claim 10, wherein: the low-frequency oscillators in each low-frequency array and the high-frequency oscillators in each high-frequency array are linearly arranged at equal intervals of 0.5-1 times of the central frequency wavelength of the working frequency band.
12. The embedded dual band array antenna of claim 11, wherein: the reflector of the high-frequency oscillator positioned in the low-frequency oscillator is arranged above the base, and the reflectors of the high-frequency oscillator positioned in the low-frequency oscillator and the high-frequency oscillator positioned outside the low-frequency oscillator are not in contact with the low-frequency oscillator.
13. The embedded dual band array antenna of claim 12, wherein: the high-frequency oscillator comprises a box-shaped reflector, two mutually vertical medium supporting plates and a medium plate horizontally placed on the medium supporting plates; the medium support is vertically arranged on the box-shaped reflector, the microstrip balun structure is printed on the two sides of the medium support plate, and two radiator vibrator pairs which are perpendicular to each other are printed on the medium plate.
CN202011380549.XA 2020-12-01 2020-12-01 Decoupling dual-polarization low-frequency oscillator and embedded dual-band array antenna Pending CN112542682A (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113346222A (en) * 2021-05-21 2021-09-03 中天通信技术有限公司 Low-frequency oscillator and antenna device
CN114122691A (en) * 2021-11-16 2022-03-01 中信科移动通信技术股份有限公司 High-frequency radiating unit

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113346222A (en) * 2021-05-21 2021-09-03 中天通信技术有限公司 Low-frequency oscillator and antenna device
CN114122691A (en) * 2021-11-16 2022-03-01 中信科移动通信技术股份有限公司 High-frequency radiating unit
CN114122691B (en) * 2021-11-16 2024-04-09 中信科移动通信技术股份有限公司 High frequency radiating unit

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