CN112542541A - Thermal power generation device and preparation method thereof - Google Patents
Thermal power generation device and preparation method thereof Download PDFInfo
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- CN112542541A CN112542541A CN202011358436.XA CN202011358436A CN112542541A CN 112542541 A CN112542541 A CN 112542541A CN 202011358436 A CN202011358436 A CN 202011358436A CN 112542541 A CN112542541 A CN 112542541A
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- type semiconductor
- flexible substrate
- thermal power
- insulating film
- power generation
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/10—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
- H10N10/17—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the structure or configuration of the cell or thermocouple forming the device
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/01—Manufacture or treatment
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/10—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
Abstract
The invention relates to a thermal power generation device and a preparation method thereof, wherein the device comprises a P-type semiconductor and an N-type semiconductor which are respectively doped on the two side surfaces of a flexible substrate, and a first flexible insulating film and a second flexible insulating film which encapsulate the flexible substrate, the P-type semiconductor and the N-type semiconductor form a P-N pair, lead-out wires are connected with the P-type semiconductor and the N-type semiconductor, the flexible substrate is wavy, and the P-type semiconductor and the N-type semiconductor are positioned on the peak ridge of the flexible substrate. Compared with the prior art, the method has the advantages of wider application range and strong flexibility.
Description
Technical Field
The invention relates to the field of thermal power generation, in particular to a thermal power generation device and a preparation method thereof.
Background
Thermal power generation devices play a special role in modern technology and play an important role in life. The mobile phone, the solar energy, the air conditioner, the refrigerator, the wearable device and various intelligent products basically have temperature gradients in the using process, so the thermal power generation device has a great application prospect. When the application of the thermal power generation device is put on human body wearable equipment, the flexibility, the portability and the conversion efficiency become important research points.
At present, silicon is mostly used as a substrate, and the problems of small application range and small flexibility exist.
Disclosure of Invention
The present invention is directed to a thermal power generating apparatus and a method for manufacturing the same, which overcome the above-mentioned drawbacks of the prior art.
The purpose of the invention can be realized by the following technical scheme:
a thermal power generation device comprises a P-type semiconductor and an N-type semiconductor which are doped on the two side surfaces of a flexible substrate respectively, and a first flexible insulating film and a second flexible insulating film which encapsulate the flexible substrate, wherein the P-type semiconductor and the N-type semiconductor form a P-N pair, lead-out wires are connected with the P-type semiconductor and the N-type semiconductor, the flexible substrate is wavy, and the P-type semiconductor and the N-type semiconductor are located on the peak ridge of the flexible substrate.
The number of the P-type semiconductors is plural, the number of the N-type semiconductors is plural, the P-type semiconductors and the N-type semiconductors form a plurality of P-N pairs, the P-N pairs are connected in series, and the P-type semiconductors and the N-type semiconductors form gaps at peaks and valleys.
The plurality of P-type semiconductors and the plurality of N-type semiconductors are arranged at equal intervals along the ridges.
The P-type semiconductor is bismuth telluride doped with antimony, and the N-type semiconductor is bismuth telluride doped with selenium.
The flexible substrate is a polyimide flexible substrate.
The first flexible insulating film is a PDMS film, and the second flexible insulating film is a PDMS film.
And the first flexible insulating film and the second flexible insulating film encapsulate the flexible substrate through a hot-pressing process.
A method for producing the thermal power generation device, comprising the steps of:
s1: spin-coating photoresist positive glue on the surface of one side of the flexible substrate;
s2: covering a mask plate, and irradiating the flexible substrate by using ultraviolet light;
s3: prebaking the flexible substrate irradiated by the ultraviolet light, changing the characteristics of the photoresist to change the positive photoresist into the negative photoresist, and carrying out development operation;
s4: doping a P-type semiconductor on the surface of the flexible substrate after development;
s5: stripping the residual photoresist and the P-type semiconductor by using a lift-off process to obtain a primary structure;
s6: on the basis of the primary structure, turning over the mask plate, repeating the steps S1-S5, and doping an N-type semiconductor on the surface to form a P-N pair;
s7: the flexible substrate is waved through vacuum heat treatment;
s8: leading out wires to connect the P-type semiconductor and the N-type semiconductor;
s9: and packaging the flexible substrate by adopting the first flexible insulating film and the second flexible insulating film to obtain the thermal power generation device.
In S7, the flexible substrate is adhered to a carrier having a wave shape, and the flexible substrate is formed into a wave shape by vacuum heat treatment.
Compared with the prior art, the invention has the following advantages:
(1) the flexible substrate, the first flexible insulating film and the second flexible insulating film which encapsulate the flexible substrate are used, so that the whole thermal power generation device has a bendable type, is wider in application range, has less harsh environmental requirements, and can be installed on a free-form surface.
(2) The flexible substrate is wavy, the P-type semiconductor and the N-type semiconductor are located on the ridge of the flexible substrate, and the thermal power generation device has good folding performance and is convenient to carry due to the structure.
(3) The P-type semiconductor is formed by doping antimony into bismuth telluride, and the N-type semiconductor is formed by doping selenium into bismuth telluride, so that heat energy can be converted into electric energy to the maximum extent, the requirement of a low-power supply can be met, the size of the thermal power generation device can be reduced, and the flexibility is improved.
(4) The whole thermal power generation device is used as clean energy and has the advantages of no noise, no abrasion, no medium leakage, light weight and the like.
Drawings
FIG. 1 is a schematic structural view of the present invention;
reference numerals:
1 is a first flexible insulating film; 2 is a P-type semiconductor; 3 is an N-type semiconductor; 4 is a second flexible insulating film; 5 is a flexible substrate; and 6 is a lead-out wire.
Detailed Description
The invention is described in detail below with reference to the figures and specific embodiments. The present embodiment is implemented on the premise of the technical solution of the present invention, and a detailed implementation manner and a specific operation process are given, but the scope of the present invention is not limited to the following embodiments.
Examples
A thermal power generation device comprises a P-type semiconductor 2 and an N-type semiconductor 3 doped on one side surface of a flexible substrate 5, a first flexible insulating film 1 and a second flexible insulating film 4 for packaging the flexible substrate 5, wherein the P-type semiconductor 2 and the N-type semiconductor 3 are communicated to form a P-N pair, a lead wire 6 is connected with the P-type semiconductor 2 and the N-type semiconductor 3, the flexible substrate 5 is wavy, and the P-type semiconductor 2 and the N-type semiconductor 3 are positioned on the peak ridge of the flexible substrate 5, as shown in figure 1.
Specifically, the method comprises the following steps:
the number of the P-type semiconductors 2 is multiple, the number of the N-type semiconductors 3 is multiple, the P-type semiconductors 2 and the N-type semiconductors 3 form a plurality of P-N pairs, the P-N pairs are connected in series, the P-type semiconductors 2 and the N-type semiconductors 3 form gaps at peaks and valleys, and the P-type semiconductors 2 and the N-type semiconductors 3 are arranged at equal intervals along the peaks and the ridges.
The first flexible insulating film 1 is a PDMS film, the second flexible insulating film 4 is a PDMS film, and the first flexible insulating film 1 and the second flexible insulating film 4 encapsulate the flexible substrate 5 by a hot pressing process.
The flexible substrate 5 is a polyimide flexible substrate.
The P-type semiconductor 2 is bismuth telluride doped with antimony, and the N-type semiconductor 3 is bismuth telluride doped with selenium.
Structural size of the whole thermal power generation device: the length x width x height is 70x70x5 (mm), the Seebeck coefficient is 160mV/K, the resistivity of the bismuth telluride P-N pair is 3.12x10-5 omega m, and the adopted PDMS film is packaged to ensure that the thermal power generation device is even if the thermal power generation device is packaged by the PDMS filmThe material can not be broken under the curvature radius of 9 mm, the maximum output is about 1mW when the temperature difference is 10K, and the exchange power can reach 4.09x10-4η。
The embodiment also provides a preparation method of the thermal power generation device, which comprises the following steps:
s1: spin-coating photoresist positive photoresist AZ5214E on the flexible substrate 5;
s2: covering a mask plate, and irradiating the flexible substrate 5 by using ultraviolet light;
s3: prebaking the flexible substrate 5 irradiated by the ultraviolet light, changing the characteristics of the photoresist to change the positive photoresist into the negative photoresist, and carrying out development operation;
s4: after development, doping the P-type semiconductor 2 on the surface of the flexible substrate 5;
s5: stripping the residual photoresist and the P-type semiconductor 2 by using a lift-off process to obtain a primary structure;
s6: on the basis of the primary structure, rotating the mask plate by 180 degrees, repeating the steps S1-S5, and doping the N-type semiconductor 3 on the surface to form a P-N pair;
s7: array preparation is adopted, 1991 pairs of P-N pairs are formed, and 1991 pairs of P-N pairs are connected in series;
s8: adhering a flexible substrate 5 on a carrier plate in a waveform shape, and forming the flexible substrate 5 into a waveform shape through vacuum heat treatment;
s9: the lead-out wire 6 is connected with the P-type semiconductor 2 and the N-type semiconductor 3;
s9: the flexible substrate 5 is encapsulated with the first flexible insulating film 1 and the second flexible insulating film 4, and the thermal power generation device is obtained.
The working principle is as follows:
based on the Seebeck theory, because two homogeneous conductors with different components form a closed loop, a heat transfer component can be formed, when temperature gradients are formed on two surfaces of the PDMS packaging film, electromotive force can be generated between the PDMS packaging film and the PDMS packaging film, a lead is led out to generate current, the magnitude of the current is related to the homogeneous conductor material, is related to temperature difference and is unrelated to the length and the diameter of the flexible substrate, and the P-N pairs form thermocouples which can be used for measuring temperature and generating electricity. Therefore, the thermal power generation device can be used as a low-power supply and an energy supply device of small wearable equipment.
Claims (9)
1. The thermal power generation device is characterized by comprising a P-type semiconductor (2) and an N-type semiconductor (3) which are doped on the two side surfaces of a flexible substrate (5) respectively, and a first flexible insulating film (1) and a second flexible insulating film (4) which encapsulate the flexible substrate (5), wherein the P-type semiconductor (2) and the N-type semiconductor (3) form a P-N pair, a lead-out wire (6) is connected with the P-type semiconductor (2) and the N-type semiconductor (3), the flexible substrate (5) is wavy, and the P-type semiconductor (2) and the N-type semiconductor (3) are located on the peak ridge of the flexible substrate (5).
2. A thermal power generation device according to claim 1, wherein there are a plurality of said P-type semiconductors (2), a plurality of said N-type semiconductors (3), a plurality of said P-type semiconductors (2) and a plurality of said N-type semiconductors (3) form a plurality of P-N pairs, a plurality of said P-N pairs are connected in series, and a plurality of said P-type semiconductors (2) and a plurality of said N-type semiconductors (3) form a gap at a peak and a valley.
3. A thermal power generation device according to claim 2, wherein a plurality of said P-type semiconductors (2) and a plurality of said N-type semiconductors (3) are arranged at equal intervals along the ridges.
4. A thermal power plant according to claim 1, characterized in that said P-type semiconductor (2) is bismuth telluride doped with antimony and said N-type semiconductor (3) is bismuth telluride doped with selenium.
5. A thermal power plant according to claim 1, characterized in that said flexible substrate (5) is a polyimide flexible substrate.
6. A thermal power generation device according to claim 1, wherein said first flexible insulating film (1) is a PDMS film, and said second flexible insulating film (4) is a PDMS film.
7. A thermal power generation device according to claim 7, wherein said first flexible insulating film (1) and said second flexible insulating film (4) encapsulate said flexible substrate (5) by a hot pressing process.
8. A method of manufacturing a thermal power plant according to any one of claims 1 to 7, comprising the steps of:
s1: spin-coating photoresist positive glue on the surface of one side of the flexible substrate (5);
s2: covering a mask plate and irradiating the flexible substrate (5) by ultraviolet light;
s3: prebaking the flexible substrate (5) irradiated by the ultraviolet light, changing the characteristics of the photoresist to change the positive photoresist into the negative photoresist, and carrying out development operation;
s4: after development, doping a P-type semiconductor (2) on the surface of the flexible substrate (5);
s5: stripping the residual photoresist and the P-type semiconductor (2) by using a lift-off process to obtain a primary structure;
s6: on the basis of the primary structure, turning over the mask plate, repeating the steps S1-S5, and doping an N-type semiconductor (3) on the surface to form a P-N pair;
s7: the flexible substrate (5) is waved through vacuum heat treatment;
s8: the lead-out wire (6) is connected with the P-type semiconductor (2) and the N-type semiconductor (3);
s9: and packaging the flexible substrate (5) by adopting the first flexible insulating film (1) and the second flexible insulating film (4) to obtain the thermal power generation device.
9. A manufacturing method according to claim 8, wherein the flexible substrate (5) is adhered to the carrier sheet having a wave shape in S7, and the flexible substrate (5) is formed into a wave shape by vacuum heat treatment.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202011358436.XA CN112542541A (en) | 2020-11-27 | 2020-11-27 | Thermal power generation device and preparation method thereof |
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| CN202011358436.XA CN112542541A (en) | 2020-11-27 | 2020-11-27 | Thermal power generation device and preparation method thereof |
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Citations (7)
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| WO1996015412A2 (en) * | 1994-11-08 | 1996-05-23 | Kavon V.O.S | Cascade of thermoelectric couples |
| US6314741B1 (en) * | 1997-08-25 | 2001-11-13 | Citizen Watch Co., Ltd. | Thermoelectric device |
| WO2013114854A1 (en) * | 2012-02-03 | 2013-08-08 | 日本電気株式会社 | Organic thermoelectric power generating element and production method therefor |
| CN103354240A (en) * | 2012-11-13 | 2013-10-16 | 国家纳米科学中心 | Combined nanometer generator and preparation method thereof |
| US20140318591A1 (en) * | 2013-04-26 | 2014-10-30 | Eastman Chemical Company | Self-corrugating laminates useful in the manufacture of thermoelectric devices and corrugated structures therefrom |
| CN104538541A (en) * | 2014-11-26 | 2015-04-22 | 辽宁师范大学 | Novel carbon nanotube based organic composite thermoelectric material |
| CN107846157A (en) * | 2017-10-11 | 2018-03-27 | 中国科学院上海硅酸盐研究所 | Temperature difference electricity generation device |
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2020
- 2020-11-27 CN CN202011358436.XA patent/CN112542541A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1996015412A2 (en) * | 1994-11-08 | 1996-05-23 | Kavon V.O.S | Cascade of thermoelectric couples |
| US6314741B1 (en) * | 1997-08-25 | 2001-11-13 | Citizen Watch Co., Ltd. | Thermoelectric device |
| WO2013114854A1 (en) * | 2012-02-03 | 2013-08-08 | 日本電気株式会社 | Organic thermoelectric power generating element and production method therefor |
| CN103354240A (en) * | 2012-11-13 | 2013-10-16 | 国家纳米科学中心 | Combined nanometer generator and preparation method thereof |
| US20140318591A1 (en) * | 2013-04-26 | 2014-10-30 | Eastman Chemical Company | Self-corrugating laminates useful in the manufacture of thermoelectric devices and corrugated structures therefrom |
| CN104538541A (en) * | 2014-11-26 | 2015-04-22 | 辽宁师范大学 | Novel carbon nanotube based organic composite thermoelectric material |
| CN107846157A (en) * | 2017-10-11 | 2018-03-27 | 中国科学院上海硅酸盐研究所 | Temperature difference electricity generation device |
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