CN112538615A - Liquid source storage system - Google Patents
Liquid source storage system Download PDFInfo
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- CN112538615A CN112538615A CN202011280787.3A CN202011280787A CN112538615A CN 112538615 A CN112538615 A CN 112538615A CN 202011280787 A CN202011280787 A CN 202011280787A CN 112538615 A CN112538615 A CN 112538615A
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- 239000007788 liquid Substances 0.000 title claims abstract description 52
- 239000002243 precursor Substances 0.000 claims abstract description 31
- 239000000463 material Substances 0.000 claims abstract description 30
- 239000011261 inert gas Substances 0.000 claims description 30
- 238000010438 heat treatment Methods 0.000 claims description 11
- 239000007789 gas Substances 0.000 claims description 10
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 claims description 5
- TWQSOHGSGBWNBD-UHFFFAOYSA-N n-[dimethylamino(diethyl)silyl]-n-methylmethanamine Chemical compound CC[Si](CC)(N(C)C)N(C)C TWQSOHGSGBWNBD-UHFFFAOYSA-N 0.000 claims description 5
- 229910052786 argon Inorganic materials 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 239000012705 liquid precursor Substances 0.000 claims description 2
- 238000002360 preparation method Methods 0.000 abstract description 7
- 238000001514 detection method Methods 0.000 abstract description 5
- 238000011897 real-time detection Methods 0.000 abstract description 5
- 238000002347 injection Methods 0.000 abstract description 4
- 239000007924 injection Substances 0.000 abstract description 4
- 230000001105 regulatory effect Effects 0.000 abstract description 4
- 230000000903 blocking effect Effects 0.000 description 9
- 238000000231 atomic layer deposition Methods 0.000 description 6
- 230000009471 action Effects 0.000 description 5
- 239000010408 film Substances 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 239000012159 carrier gas Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000003044 adaptive effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Images
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/4481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
Abstract
The invention discloses a liquid source storage system which comprises a storage tank body, a pressure detector and a pressure regulator. According to the technical scheme, the pressure detection structure and the pressure regulation structure are additionally arranged, so that the adaptability can be accurately regulated according to the cavity pressure obtained through real-time detection, the stable injection of the precursor material into the reaction chamber is stably controlled, and the uniformity and the reliability of the film preparation in the reaction chamber are further guaranteed.
Description
Technical Field
The invention relates to the technical field of semiconductor wafer preparation, in particular to a liquid source storage system.
Background
In the prior art, a liquid source precursor is often heated to be gasified, and enters a reaction chamber under the driving of inert gas to participate in the preparation of a thin film.
For example, in the case of Atomic Layer Deposition (ALD) processes, bis (dimethylamino) diethylsilane (C) is commonly used8H22N2Si, abbreviated as SAM24) as a precursor material for depositing a silicon-containing thin film, which is in a liquid state at a temperature lower than 30 ℃ and is slowly vaporized at a temperature higher than 50 ℃ due to the physical properties of SAM24, and atomic layer deposition apparatuses are generally designed to introduce a gaseous SAM24 using an inert gas as a carrier gas when introducing a precursor material into a reaction chamber.
The precursor material is changed into a gaseous state from a liquid state in the storage tank and enters the reaction chamber along with the carrier gas, and the pressure intensity of the gaseous precursor material is different at each stage due to the influence of the external temperature on the precursor in the storage tank, so that the gaseous precursor participating in the reaction is unstable when entering the reaction chamber, and the prepared film is not uniform.
Disclosure of Invention
In view of the above problems in the prior art, a liquid source storage system is provided, and the specific technical solution is as follows:
a liquid source storage system applied to an atomic layer deposition device comprises:
the storage tank body is used for storing precursor materials required by atomic layer deposition;
a pressure detector for continuously detecting the internal pressure of the storage tank body;
the pressure regulator is electrically connected with the pressure detector and used for relieving the pressure inside the storage tank body until the internal pressure is less than a first preset threshold value according to the pressure when the pressure is greater than or equal to the first preset threshold value; and
and when the pressure is less than or equal to a second preset threshold, pressurizing the interior of the storage tank body until the internal pressure is greater than the second preset threshold.
Preferably, the liquid source storage system, wherein the liquid source storage system further comprises;
one end of the first one-way pipeline is connected with an inert gas source, the other end of the first one-way pipeline is connected with the storage tank body, and inert gas corresponding to the inert gas source enters the storage tank body through the first one-way pipeline;
and one end of the second one-way pipeline is connected with the storage tank body, and the other end of the second one-way pipeline is connected with a reaction chamber.
Preferably, the liquid source storage system, wherein the first one-way conduit comprises a first block valve;
the second one-way conduit includes a second block valve.
Preferably, in the liquid source storage system, the first unidirectional pipeline is communicated with the second unidirectional pipeline through a third unidirectional pipeline;
one end of a third one-way pipeline is arranged between the first block valve and the inert gas source, and the other end of the third one-way pipeline is arranged between the second block valve and the reaction chamber;
the third one-way conduit includes a third block valve.
Preferably, the liquid source storage system, wherein the pressure regulator comprises a fourth one-way conduit and a fifth one-way conduit;
one end of the fourth one-way pipeline is connected with an inert gas source, the other end of the fourth one-way pipeline is connected with the storage tank body, and the interior of the storage tank body is pressurized by introducing the inert gas;
one end of the fifth one-way pipeline is connected with the storage tank body, and the other end of the fifth one-way pipeline is connected with a tail gas treatment device.
Preferably, in the liquid source storage system, the fourth one-way pipe and the fifth one-way pipe each include an electrically controlled valve;
the liquid source storage system also comprises a controller which is respectively connected with each electric control valve and the pressure detector and controls the opening and closing of the electric control valves according to the pressure intensity.
Preferably, the liquid source storage system, wherein a heating device is provided outside the storage tank for heating the precursor material.
Preferably, the liquid source storage system, wherein a temperature detector is arranged inside the storage tank body and used for detecting the internal gas temperature of the storage tank body;
the temperature detector is arranged close to the top of the storage tank body.
Preferably, the liquid source storage system, wherein the precursor material comprises bis (dimethylamino) diethylsilane or tetraethylorthosilicate.
Preferably, the liquid source storage system, wherein the inert gas comprises argon or nitrogen.
The technical scheme has the following advantages or beneficial effects:
according to the technical scheme, the pressure detection structure and the pressure regulation structure are additionally arranged, so that the adaptability can be accurately regulated according to the cavity pressure obtained through real-time detection, the stable injection of the precursor material into the reaction chamber is stably controlled, and the uniformity and the reliability of the film preparation in the reaction chamber are further guaranteed.
Drawings
Fig. 1 is a schematic structural diagram of a liquid source storage system according to the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
It should be noted that the embodiments and features of the embodiments may be combined with each other without conflict.
The invention is further described with reference to the following drawings and specific examples, which are not intended to be limiting.
In view of the above problems in the prior art, a liquid source storage system is provided, and the specific technical solution is as follows:
a liquid source storage system, as shown in fig. 1, comprising:
the storage tank body 1 is used for storing precursor materials;
the pressure detector 2 is used for detecting the pressure intensity in the storage tank body 1 in real time;
the pressure regulator is electrically connected with the pressure detector 2 and used for regulating the pressure in the storage tank body according to the detected pressure, and when the pressure is greater than or equal to a first preset threshold value, the pressure relief action is executed until the pressure is smaller than the first preset threshold value; and
and when the pressure is less than or equal to a second preset threshold, performing pressurization action until the pressure is greater than the second preset threshold, wherein the first preset threshold is greater than the second preset threshold.
In a preferred embodiment of the present invention, the liquid source storage system can be applied to an atomic layer deposition apparatus, and can also be applied to other reaction apparatuses that require the use of a liquid source precursor. The pressure detector 2 and the pressure regulator are creatively introduced, and the pressure inside the storage tank body 1 is adaptively regulated according to the real-time detection result so as to maintain the stability of the output gaseous precursor material flow; the specific arrangement structure of the pressure regulator will be described in detail later, and the pressure regulator can perform pressurization and pressure relief actions according to the detected real-time pressure, so as to keep the pressure inside the storage tank body 1 stable in a stable output interval consisting of a first preset threshold and a second preset threshold all the time; the setting of the first preset threshold and the second preset threshold may be set by a person skilled in the art according to actual debugging requirements, and is not limited herein.
As a preferred embodiment, the liquid source storage system, wherein the liquid source storage system further comprises;
one end of the first one-way pipeline 41 is connected with the inert gas source 02, the other end of the first one-way pipeline 41 is connected with the storage tank body 1, and inert gas in the inert gas source 02 enters the storage tank body 1 through the first one-way pipeline 41;
and one end of the second one-way pipeline 42 is connected with the storage tank body 1, and the other end of the second one-way pipeline 42 is connected with the reaction chamber 01.
As a preferred embodiment, the liquid source storage system, wherein the first one-way pipe 41 comprises a first block valve 411;
the second one-way conduit 42 includes a second block valve 412.
In another preferred embodiment of the present invention, as shown in fig. 1, a first blocking valve 411 and a second blocking valve 412 are respectively disposed in the first unidirectional pipeline 41 and the second unidirectional pipeline 42, so as to control the conducting states of the first unidirectional pipeline 41 and the second unidirectional pipeline 42, and further control the injection of the inert gas and the vaporized precursor material into the reaction chamber 01, and the conducting states can be controlled according to an external control instruction, or can be manually controlled.
As a preferred embodiment, the liquid source storage system, wherein the first one-way pipe 41 is communicated with the second one-way pipe 42 through the third one-way pipe 7;
one end of the third one-way pipe 7 is arranged between the first block and pass valve 411 and the inert gas source 02, and the other end of the third one-way pipe 7 is arranged between the second block and pass valve 412 and the reaction chamber 01;
the third one-way duct 7 comprises a third block-and-valve 71.
In another preferred embodiment of the present invention, when the first blocking valve 411 and the second blocking valve 412 are both in the closed state, the inert gas corresponding to the inert gas source 02 can directly enter the reaction chamber 01 through the first unidirectional pipeline 41, the second unidirectional pipeline 42 and the third unidirectional pipeline 7 to be used as the shielding gas; in the above preferred embodiment, the third one-way pipe 7 is further provided with a third blocking valve 71 for conducting control, when an inert gas is required to be used as a carrier gas to carry the gaseous precursor material into the reaction chamber 01, the first blocking valve 411 and the second blocking valve 412 are in an open state, and the third blocking valve 71 is in a closed state.
As a preferred embodiment, the liquid source storage system, wherein the exterior of the storage tank 1 is provided with a heating device 5 for heating the precursor material.
In another preferred embodiment of the present invention, the liquid source storage system comprises a heating device 5, which is conventionally configured and used for heating the precursor material to be vaporized and enter the reaction chamber 01 with the inert gas for the preparation of the thin film. The heating device 5 is, for example, a heating belt that wraps the storage tank 1.
As a preferred embodiment, the liquid source storage system, wherein the inside of the storage tank body 1 is provided with a temperature detector 6 for detecting the internal gas temperature of the storage tank body 1;
the temperature detector 6 is located close to the top of the storage tank 1.
In another preferred embodiment of the present invention, different from the implementation means in the prior art, the temperature detector 6 is disposed at a position close to the top of the storage tank 1, and since the precursor material in the storage tank 1 needs to be converted into a gaseous state in a heating state and then enters the reaction chamber 01, the liquid precursor material does not fill the whole storage tank 1, and thus the temperature detector 6 is disposed at a position close to the top of the storage tank, so that it can be ensured that the sampling detection object of the temperature detector 6 is always the gaseous precursor material, and the detection object cannot be changed due to the level change of the precursor material.
In the preferred embodiment, the pressure regulator of the liquid source storage system comprises a fourth one-way pipe 31 and a fifth one-way pipe 32;
one end of the fourth one-way pipeline 31 is connected with the inert gas source 02, the other end of the fourth one-way pipeline is connected with the storage tank body 1, and the pressurization action is executed by introducing the inert gas;
one end of the fifth one-way pipeline 32 is connected to the storage tank 1, and the other end is connected to the tail gas treatment device 03.
In another preferred embodiment of the present invention, the pressure regulator in the present technical solution is composed of a fourth one-way pipe 31 and a fifth one-way pipe 32, wherein the fourth one-way pipe 31 is connected with an inert gas source 02 to realize the pressurization operation by introducing new inert gas into the storage tank 1; the fifth one-way pipeline 32 is connected to the tail gas treatment device 03, and directly discharges part of the gas in the storage tank body 1 to the tail gas treatment device to realize the depressurization.
In a preferred embodiment, the liquid source storage system, wherein the fourth one-way pipe 31 and the fifth one-way pipe 32 respectively comprise an electrically controlled valve;
the liquid source storage system also comprises a controller, the controller is respectively connected with each electric control valve and the pressure detector 2, and the opening and closing of the electric control valves are controlled according to the pressure intensity.
In another preferred embodiment of the present invention, the liquid source storage system implements the conduction control for the fourth unidirectional pipeline 31 and the fifth unidirectional pipeline 32 through the controller: the fourth one-way pipe 31 and the fifth one-way pipe 32 are respectively provided with an electric control valve 311 and an electric control valve 312, and the electric control valve 311 and the electric control valve 312 are controlled by the controller to open and close so as to realize the conduction control of the corresponding one-way conduction pipe; in the above preferred embodiment, the controller is electrically connected to the pressure detector 2, the electrically controlled valve 311 and the electrically controlled valve 312, respectively, and performs corresponding control actions of the electrically controlled valve according to the real-time detection data obtained by the pressure detector 2 and the above determination rule, so as to realize accurate control of the internal pressure of the storage tank 1.
In the above preferred embodiment, the controller preferably adopts a PID controller, and realizes real-time regulation and control of the linear change of the real-time detection result of the pressure detector 2 based on the proportional unit, the integral unit and the differential unit, so as to ensure more precise and accurate real-time stability of the gaseous precursor material entering the reaction chamber.
In a preferred embodiment, the liquid source storage system, wherein the bottom of the storage tank 1 is connected to a feed channel 8 for replenishing the precursor material.
In another preferred embodiment of the present invention, the bottom of the storage tank 1 is provided with a feeding channel 8, which is timely replenished when the storage tank 1 is short of the precursor material, and the feeding channel 8 is also provided with a blocking valve for opening and closing control.
As a preferred embodiment, the liquid source storage system, wherein the precursor material comprises bis (dimethylamino) diethylsilane or tetraethylorthosilicate.
In another preferred embodiment of the present invention, bis (dimethylamino) diethylsilane (abbreviated as SAM24) or tetraethyl orthosilicate (TEOS) can be used as the precursor material for preparing the silicon dioxide film. In other embodiments, one skilled in the art can select suitable precursor materials according to the preparation needs of the thin film, and is not limited herein. Embodiments of the present invention may be applied to the storage of source materials in a liquid state that transitions from a liquid state to a gaseous state.
In a preferred embodiment, the liquid source storage system, wherein the inert gas comprises argon or nitrogen.
In conclusion, according to the technical scheme, the pressure detection structure and the pressure regulation structure are additionally arranged, so that adaptive accurate regulation can be performed according to the cavity pressure detected in real time, stable injection of the precursor material to the reaction chamber is stably controlled, and the uniformity and the reliability of the film preparation in the reaction chamber are further guaranteed.
While the invention has been described with reference to a preferred embodiment, it will be understood by those skilled in the art that various changes in form and detail may be made therein without departing from the spirit and scope of the invention.
Claims (10)
1. A liquid source storage system, comprising:
the storage tank body is used for storing liquid precursor materials;
the pressure detector is used for detecting the internal pressure of the storage tank body in real time;
the pressure regulator is electrically connected with the pressure detector and used for relieving the pressure inside the storage tank body until the internal pressure is smaller than a first preset threshold value according to the pressure when the pressure is larger than or equal to the first preset threshold value; and
and when the pressure is less than or equal to a second preset threshold, pressurizing the interior of the storage tank body until the internal pressure is greater than the second preset threshold.
2. The liquid source storage system of claim 1, further comprising;
one end of the first one-way pipeline is connected with an inert gas source, the other end of the first one-way pipeline is connected with the storage tank body, and inert gas corresponding to the inert gas source enters the storage tank body through the first one-way pipeline;
and one end of the second one-way pipeline is connected with the storage tank body, and the other end of the second one-way pipeline is connected with a reaction chamber.
3. The liquid source storage system as claimed in claim 2, wherein said first one-way conduit includes a first block valve;
the second one-way conduit includes a second block valve.
4. The liquid source storage system of claim 3, wherein the first one-way pipe communicates with the second one-way pipe through a third one-way pipe;
one end of the third one-way pipeline is arranged between the first block valve and the inert gas source, and the other end of the third one-way pipeline is arranged between the second block valve and the reaction chamber;
the third one-way conduit includes a third block valve.
5. The liquid source storage system of claim 1, wherein the pressure regulator includes a fourth one-way conduit and a fifth one-way conduit;
one end of the fourth one-way pipeline is connected with an inert gas source, the other end of the fourth one-way pipeline is connected with the storage tank body, and the interior of the storage tank body is pressurized by introducing the inert gas;
one end of the fifth one-way pipeline is connected with the storage tank body, and the other end of the fifth one-way pipeline is connected with a tail gas treatment device.
6. The liquid source storage system of claim 5, wherein the fourth one-way pipe and the fifth one-way pipe each include an electrically controlled valve;
the liquid source storage system also comprises a controller, wherein the controller is respectively connected with each electric control valve and the pressure detector and controls the opening and closing of the electric control valves according to the pressure intensity.
7. The liquid source storage system of claim 1, wherein a heating device is provided external to the storage tank for heating the precursor material.
8. The liquid source storage system of claim 1, wherein the interior of the storage tank is provided with a temperature detector for detecting an internal gas temperature of the storage tank;
the temperature detector is arranged close to the top of the storage tank body.
9. The liquid source storage system of claim 1, wherein the precursor material comprises bis (dimethylamino) diethylsilane or ethyl orthosilicate.
10. The liquid source storage system of claim 2, wherein the inert gas comprises argon or nitrogen.
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| CN202011280787.3A CN112538615A (en) | 2020-11-16 | 2020-11-16 | Liquid source storage system |
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| CN202011280787.3A CN112538615A (en) | 2020-11-16 | 2020-11-16 | Liquid source storage system |
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