CN112531078B - Defect passivation method for solving problem of light attenuation of copper indium gallium selenide solar cell - Google Patents
Defect passivation method for solving problem of light attenuation of copper indium gallium selenide solar cell Download PDFInfo
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- 238000000034 method Methods 0.000 title claims abstract description 52
- KTSFMFGEAAANTF-UHFFFAOYSA-N [Cu].[Se].[Se].[In] Chemical compound [Cu].[Se].[Se].[In] KTSFMFGEAAANTF-UHFFFAOYSA-N 0.000 title claims abstract description 39
- 230000007547 defect Effects 0.000 title claims abstract description 29
- 238000002161 passivation Methods 0.000 title claims abstract description 19
- 238000000151 deposition Methods 0.000 claims abstract description 36
- 239000000758 substrate Substances 0.000 claims abstract description 24
- 230000031700 light absorption Effects 0.000 claims abstract description 14
- 238000001704 evaporation Methods 0.000 claims description 43
- 238000010438 heat treatment Methods 0.000 claims description 42
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 28
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 24
- 239000010949 copper Substances 0.000 claims description 20
- 239000012495 reaction gas Substances 0.000 claims description 18
- 239000007789 gas Substances 0.000 claims description 15
- 229910052711 selenium Inorganic materials 0.000 claims description 15
- 229910052786 argon Inorganic materials 0.000 claims description 14
- 229910052783 alkali metal Inorganic materials 0.000 claims description 13
- 229910052802 copper Inorganic materials 0.000 claims description 12
- 230000008021 deposition Effects 0.000 claims description 12
- 229910052757 nitrogen Inorganic materials 0.000 claims description 12
- 150000001340 alkali metals Chemical class 0.000 claims description 11
- 229910052733 gallium Inorganic materials 0.000 claims description 11
- 229910052738 indium Inorganic materials 0.000 claims description 10
- 229910052799 carbon Inorganic materials 0.000 claims description 9
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 6
- 239000001301 oxygen Substances 0.000 claims description 6
- 229910052760 oxygen Inorganic materials 0.000 claims description 6
- 238000010549 co-Evaporation Methods 0.000 claims description 5
- 239000011261 inert gas Substances 0.000 claims description 5
- 230000001590 oxidative effect Effects 0.000 claims description 5
- 238000001816 cooling Methods 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 3
- 239000010409 thin film Substances 0.000 abstract description 10
- 230000008020 evaporation Effects 0.000 description 26
- 230000008569 process Effects 0.000 description 20
- 238000007650 screen-printing Methods 0.000 description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 6
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 4
- 238000001755 magnetron sputter deposition Methods 0.000 description 4
- 238000002360 preparation method Methods 0.000 description 4
- 229910052708 sodium Inorganic materials 0.000 description 4
- 239000011734 sodium Substances 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 238000005086 pumping Methods 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 238000006722 reduction reaction Methods 0.000 description 3
- 238000009825 accumulation Methods 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000005204 segregation Methods 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- HVMJUDPAXRRVQO-UHFFFAOYSA-N copper indium Chemical compound [Cu].[In] HVMJUDPAXRRVQO-UHFFFAOYSA-N 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
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Abstract
The invention discloses a defect passivation method for solving the problem of light decay of a copper indium gallium selenide solar cell, which comprises the following steps: (1) depositing a Mo back electrode on a substrate; (2) depositing a copper indium gallium selenide light absorption layer on the Mo back electrode; (3) depositing a CdS buffer layer on the CIGS light absorption layer; (4) depositing a high-resistance i-ZnO layer and ZnO, namely an Al window layer on the CdS buffer layer to form the copper indium gallium selenide solar cell; (5) and carrying out defect passivation treatment on the copper indium gallium selenide solar cell. The invention can effectively reduce the defect density of the CIGS solar cell, prolong the optimal service life of the CIGS thin-film solar cell and improve the actual service power of the outdoor CIGS thin-film solar cell.
Description
Technical Field
The invention relates to the technical field of solar cell production, in particular to a defect passivation method for solving the problem of light attenuation of a copper indium gallium selenide solar cell.
Background
With the increasing severity of energy crisis, renewable energy is more and more emphasized by people, wherein solar energy becomes the most potential technology with inexhaustible, clean and pollution-free performance, the silicon-based solar technology is the most mature at present and the highest market share, but cannot become the most ideal solar technology due to the preparation process with high energy consumption and high pollution.
The basic structure of the copper indium gallium selenide solar cell consists of a substrate, a back electrode layer, an absorption layer, a buffer layer, a window layer, an antireflection layer and an electrode layer. Theoretically, the light decay phenomenon of the copper indium gallium selenide solar cell is much weaker than that of the crystalline silicon solar cell and the amorphous silicon solar cell, but in actual use, the copper indium gallium selenide solar cell has light decay phenomena of different degrees, which may be caused by the following reasons:
1. for a CIGS cell, a cell with a high alkali metal content is prone to light attenuation, which is caused by doping excessive sodium in the preparation process of the absorption layer, so that sodium migrates from the grain boundary position of the absorption layer to the depletion layer under the excitation action of light, the accumulation of sodium in the depletion layer and the transportation of sodium through the depletion layer cause the reduction of the internal electric field, the migration causes the generation of shunt paths, and the generation of the shunt paths causes the reduction of parallel resistance and open-circuit voltage, so that the light attenuation is caused. Theelen, M., Hans, V., Barreau, N., Steijvers, H., Vroon, Z., & Zeman, M. (2015.) The impact of alkali elements on The grading of CIGS solar cells, Progress in photodynamics: Research and Applications, 23(5), 537. 545. doi: 10.1002/pip.2610.
2. Under the action of excitation of light and water vapor, the AZO layer is hydrated under the action of long-term outdoor use, and a part of ZnO gradually forms Zn (OH)2The electrical performance of the battery piece is reduced, and the light attenuation phenomenon is generated. Han, C. (2020). Analysis of motion-induced degradation of the thin-film photonic modules and Solar Cells, 210, 110488. doi: 10.1016/j.solmt. 2020.110488.
3. The Mo layer of the back electrode can form MoSe with Se during the preparation of the absorption layer2Layer of, if MoSe2The layer is too thin, and during the use of the CIGS cell, the Mo layer is easily oxidized to form MoO under the action of water vapor and temperaturexWhile Na is present+Into MoOxOxygen reduction reaction in the matrix: na (Na)xMoO3The different sodium contents lead to different conductivities and lead to Na+Diffusion into the film layer, which results in light decay in the CIGS cell. Theelen, M.,& Daume, F. (2016). Stability of Cu(In,Ga)Se2 solar cells: A literature review. Solar Energy, 133, 586–627. doi:10.1016/j.solener.2016.04.010。
under the existing process preparation method, the copper indium gallium selenide thin-film solar cell is easy to have a light attenuation phenomenon in the outdoor practical use process, and the photoelectric conversion efficiency of the cell is obviously reduced after the cell is used outdoors for a long time under the condition of high humidity, so that the normal use power and the expected service life of the copper indium gallium selenide thin-film solar cell are influenced.
Disclosure of Invention
The invention aims to provide a defect passivation method for solving the problem of light attenuation of a CIGS solar cell, which can effectively reduce the defect density of the CIGS solar cell, prolong the optimal service life of the CIGS thin-film solar cell and improve the actual use power of the outdoor CIGS thin-film solar cell.
The technical scheme adopted by the invention for solving the technical problems is as follows:
a defect passivation method for solving the problem of light decay of a copper indium gallium selenide solar cell comprises the following steps:
(1) depositing a Mo back electrode on a substrate;
(2) depositing a copper indium gallium selenide light absorption layer on the Mo back electrode;
(3) depositing a CdS buffer layer on the CIGS light absorption layer;
(4) depositing a high-resistance i-ZnO layer and ZnO, namely an Al window layer on the CdS buffer layer to form the copper indium gallium selenide solar cell;
(5) the method for passivating the defects of the CIGS solar cell specifically comprises the following steps:
placing the CIGS solar cell into an atmosphere furnace, exhausting air from a hearth, introducing reaction gas after the air is exhausted, and performing heat treatment by adopting the following procedures:
heating to 80-120 deg.C at a rate of 5-10 deg.C per minute, maintaining for 1-3 hr, and using type I reaction gas;
raising the temperature to 230 ℃ at the temperature raising speed of 2-5 ℃ per minute, preserving the temperature for 24-72 hours, and adopting II type reaction gas;
and stopping heating after the heat treatment is finished, naturally cooling to room temperature, exhausting air from the hearth and introducing compressed air to obtain the copper indium gallium selenide solar cell after the heat treatment.
Preferably, the thickness of the Mo back electrode is 450-550 nm.
Preferably, the CIGS light-absorbing layer has a thickness of 1.0 to 3.0. mu.m.
Preferably, the CdS buffer layer has a thickness of 30-70 nm.
Preferably, the total thickness of the i-ZnO layer and the ZnO-Al window layer is controlled to be 110-250 nm.
Preferably, in the step (5), the flow rate of the reaction gas is controlled to be 10 to 50cm3·min-1。
Preferably, the type I reaction gas is an inert gas selected from one of nitrogen, argon, and a nitrogen/argon mixture. The volume content of nitrogen in the nitrogen/argon mixed gas is 10-90%.
Preferably, the type II reaction gas is an oxidizing gas selected from one of dry air and an oxygen/argon mixed gas. The oxygen/argon mixture has an oxygen content of 20-70% by volume.
Preferably, in the step (2), an alkali metal preset layer is deposited on the Mo back electrode, and then the copper indium gallium selenide light absorption layer is deposited, wherein the thickness of the alkali metal preset layer is 2-20nm, and the material of the alkali metal preset layer is selected from one of NaF, KF, RbF and CsF.
Preferably, the CIGS light absorption layer is deposited by a three-step co-evaporation method, wherein the step 1 comprises the following steps: raising the temperature of the substrate to 300-450 ℃, co-evaporating In, Ga and Se, and depositing the thickness of 0.5-1.2 mu m, wherein Ga/(In + Ga) is more than or equal to 0.2 and less than or equal to 0.5; the second step is that: raising the temperature of the substrate to 450-650 ℃, co-evaporating Cu and Se, wherein the deposition thickness is 0.5-0.8 μm, and the Cu/(In + Ga) is more than or equal to 0.95 and less than or equal to 1.20; and 3, step 3: keeping the temperature of the substrate unchanged, co-evaporating In, Ga and Se, wherein the deposition thickness is 0.2-0.5 mu m, and finally controlling Cu/(In + Ga) to be more than or equal to 0.82 and less than or equal to 0.95 and Ga/(In + Ga) to be more than or equal to 0.2 and less than or equal to 0.4 In the CIGS.
The invention has the beneficial effects that:
according to the invention, the heat treatment is carried out after the preparation of the CIGS window layer is completed, so that the defect density in the CIGS solar cell can be effectively reduced, and the stability of the CIGS solar cell in the using process is improved.
The defect passivation technology can reduce the surface sheet resistance of the film, increase the conductivity of the film and enhance the photoelectric property of the film.
The defect passivation technology can effectively reduce the light attenuation phenomenon generated after the long-time outdoor use of the CIGS solar cell in the screen printing process, and increase the actual use power and the expected service life of the CIGS solar cell.
The copper screen printing process is different from the screen printing process, and the sintering step of silver paste is not used in the production process, so that the light attenuation phenomenon of the copper screen printing cell is more obvious in the use process, and the defect passivation technology not only improves the photoelectric conversion efficiency of the cell under the copper screen printing process (by about 0.2 percent), but also effectively inhibits the light attenuation phenomenon in the use process.
Drawings
Fig. 1 is a defect density diagram of copper indium gallium selenide battery pieces after heat treatment and without heat treatment.
FIG. 2 is a graph of the sheet resistance of a window layer after heat treatment and without heat treatment.
Fig. 3 is a light decay curve of a battery plate tested without heat treatment and after heat treatment under the copper mesh imprinting process.
Fig. 4 is a graph showing the light decay of the cell tested without heat treatment and after heat treatment in the screen printing process.
Detailed Description
The technical solution of the present invention will be further specifically described below by way of specific examples.
In the present invention, the raw materials and equipment used are commercially available or commonly used in the art, unless otherwise specified. The methods in the following examples are conventional in the art unless otherwise specified.
General description of the embodiments
A defect passivation method for solving the problem of light decay of a copper indium gallium selenide solar cell comprises the following steps:
(1) depositing a Mo back electrode on a substrate; the thickness of the Mo back electrode is 450-550 nm.
(2) Depositing an alkali metal preset layer on the Mo back electrode, and then depositing a copper indium gallium selenide light absorption layer, wherein the thickness of the alkali metal preset layer is 2-20nm, and the material of the alkali metal preset layer is selected from one of NaF, KF, RbF and CsF. The thickness of the CIGS light absorption layer is 1.0-3.0 μm. The copper indium gallium selenide light absorption layer is deposited by adopting a three-step co-evaporation method, wherein the step 1: raising the temperature of the substrate to 300-450 ℃, co-evaporating In, Ga and Se, and depositing the thickness of 0.5-1.2 mu m, wherein Ga/(In + Ga) is more than or equal to 0.2 and less than or equal to 0.5; the second step is that: raising the temperature of the substrate to 450-650 ℃, co-evaporating Cu and Se, wherein the deposition thickness is 0.5-0.8 μm, and the Cu/(In + Ga) is more than or equal to 0.95 and less than or equal to 1.20; and 3, step 3: keeping the temperature of the substrate unchanged, co-evaporating In, Ga and Se, wherein the deposition thickness is 0.2-0.5 mu m, and finally controlling Cu/(In + Ga) to be more than or equal to 0.82 and less than or equal to 0.95 and Ga/(In + Ga) to be more than or equal to 0.2 and less than or equal to 0.4 In the CIGS.
(3) Depositing a CdS buffer layer on the CIGS light absorption layer; the CdS buffer layer has a thickness of 30-70 nm.
(4) Depositing a high-resistance i-ZnO layer and ZnO, namely an Al window layer on the CdS buffer layer to form the copper indium gallium selenide solar cell; the total thickness of the i-ZnO layer and the ZnO-Al window layer is controlled to be 110-250 nm.
(5) The method for passivating the defects of the CIGS solar cell specifically comprises the following steps:
placing the CIGS solar cell into an atmosphere furnace, exhausting air from the furnace chamber, introducing reaction gas after the air is exhausted, and controlling the flow rate of the reaction gas to be 10-50cm3·min-1The heat treatment was carried out using the following procedure:
heating to 80-120 deg.C at a rate of 5-10 deg.C per minute, maintaining for 1-3 hr, and using type I reaction gas; the I type reaction gas is inert gas, and the inert gas is selected from one of nitrogen, argon and nitrogen/argon mixed gas.
Raising the temperature to 230 ℃ at the temperature raising speed of 2-5 ℃ per minute, preserving the temperature for 24-72 hours, and adopting II type reaction gas; the II-type reaction gas is oxidizing gas, and the oxidizing gas is one selected from dry air and oxygen/argon mixed gas.
And stopping heating after the heat treatment is finished, naturally cooling to room temperature, exhausting air from the hearth and introducing compressed air to obtain the copper indium gallium selenide solar cell after the heat treatment.
Example 1
1. And covering a layer of Mo back electrode with the thickness of 500nm on the stainless steel substrate by using a magnetron sputtering method.
2. Under a vacuum of 1X 10-3Pa co-evaporation cavity pumping to raise the substrate temperatureAnd co-evaporating a NaF layer on the surface of the Mo layer at 300 ℃, wherein the temperature of a NaF evaporation source is 765 ℃, and the evaporation time is 10 min.
The first step of deposition: and raising the temperature of the substrate to 550 ℃, and co-evaporating In, Ga and Se, wherein the temperature of an In evaporation source is 1040 ℃, the temperature of a Ga evaporation source is 1120 ℃, the temperature of a Se evaporation source is 460 ℃, and the evaporation time is 10 min.
And a second step of deposition: keeping the temperature of the substrate unchanged, and evaporating Cu and Se, wherein the temperature of a Cu evaporation source is 1350 ℃, the temperature of a Se evaporation source is 480 ℃, and the evaporation time is 20 min.
The third step is deposition: keeping the temperature of the substrate unchanged, and co-evaporating In, Ga and Se, wherein the temperature of an In evaporation source is 1010 ℃, the temperature of a Ga evaporation source is 1080 ℃, the temperature of an Se evaporation source is 440 ℃, and the evaporation time is 10 min.
3. And depositing a 45 nm-thick CdS buffer layer on the copper indium gallium selenide thin film layer by using a chemical water bath method.
4. And depositing a high-resistance i-ZnO layer and a ZnO/Al window layer with the total thickness of 120nm on the copper indium gallium selenide thin film layer by using a magnetron sputtering method.
5. Putting the CIGS solar cell into an atmosphere furnace, and exhausting air of the hearth by 20cm3·min-1The nitrogen is injected into the hearth at the speed of 5 ℃ for min-1Heating the atmosphere furnace to 100 ℃ at the speed of (1), and keeping the temperature for 2 hours; then the furnace is pumped out and is filled with dry air at the temperature of 2 ℃ for min-1The atmosphere furnace is heated to 200 ℃ at the speed of (1) and the temperature is kept for 48 hours.
6. And stopping heating the atmosphere furnace, pumping out nitrogen in the furnace and introducing compressed air after the atmosphere furnace is cooled to room temperature, and opening the furnace to obtain the copper indium gallium selenide solar cell after heat treatment is finished.
7. And (3) carrying out copper mesh imprinting process and laminating process on the copper indium gallium selenide solar cell after heat treatment and the copper indium gallium selenide solar cell without heat treatment under the same condition to obtain the finished copper indium gallium selenide solar cell.
8. Two CIGS solar cells are placed outdoors for actual use for 60 days, the temperature of the assembly is kept at 25 ℃, and a B-level simulator meeting the IEC 904-9 requirement is used according to the regulation of GB/T6495.11000W·m-2And under the irradiance, measuring the current-voltage characteristic of the cell piece every 10 days, and processing data to obtain a light attenuation curve graph 3 of the cell piece. Fig. 3 shows that the photoelectric conversion efficiency of the copper mesh printed battery plate after heat treatment is improved, and the light attenuation effect of the copper mesh printed battery plate is obviously weakened.
Example 2
1. Covering a Mo back electrode with the thickness of 500nm on a stainless steel substrate by using a magnetron sputtering method;
2. under a vacuum of 1X 10-3And (3) pumping a co-evaporation cavity of Pa, raising the temperature of the substrate to 280 ℃, co-evaporating a NaF layer on the surface of the Mo layer, wherein the temperature of a NaF evaporation source is 770 ℃, and the evaporation time is 10 min.
The first step of deposition: and raising the temperature of the substrate to 525 ℃, and co-evaporating In, Ga and Se, wherein the temperature of an In evaporation source is 1060 ℃, the temperature of a Ga evaporation source is 1130 ℃, the temperature of a Se evaporation source is 465 ℃ and the evaporation time is 10 min.
And a second step of deposition: keeping the temperature of the substrate unchanged, and evaporating Cu and Se, wherein the temperature of a Cu evaporation source is 1380 ℃, the temperature of a Se evaporation source is 480 ℃, and the evaporation time is 19 min.
The third step is deposition: keeping the temperature of the substrate unchanged, and co-evaporating In, Ga and Se, wherein the temperature of an In evaporation source is 995 ℃, the temperature of a Ga evaporation source is 1040 ℃, the temperature of a Se evaporation source is 450 ℃, and the evaporation time is 15 min.
3. Depositing a 50 nm-thick CdS buffer layer on the copper indium gallium selenide thin film layer by using a chemical water bath method;
4. and depositing a high-resistance i-ZnO layer and a ZnO/Al window layer with the total thickness of 110nm on the copper indium gallium selenide thin film layer by using a magnetron sputtering method.
5. Putting the CIGS solar cell into an atmosphere furnace, and exhausting the hearth by 30cm3·min-1The nitrogen/argon mixed gas with the volume ratio of 9:1 is injected into the hearth at the speed of 10 ℃ for min-1Heating the atmosphere furnace to 90 ℃ at the speed of (1), and preserving heat for 3 hours; and then, exhausting the hearth, and introducing a gas with the volume ratio of 3: 7 oxygen/argon mixed gas at 5 ℃ for min-1The temperature of the atmosphere furnace is raised to 180 ℃ at the speed of (1), and the temperature is kept for 72 hours.
6. And stopping heating the atmosphere furnace, after the atmosphere furnace is cooled to room temperature, extracting the nitrogen/argon mixed gas in the furnace, introducing compressed air, and opening the furnace to obtain the copper indium gallium selenide solar cell after heat treatment is finished.
7. And (3) performing a screen printing process and a laminating process under the same conditions on the copper indium gallium selenide solar cell after heat treatment and the copper indium gallium selenide solar cell without heat treatment to obtain the finished copper indium gallium selenide solar cell.
8. Two CIGS solar cells are placed outdoors for 60 days in actual use, the temperature of the assembly is kept at 25 ℃, and a B-level simulator meeting the IEC 904-9 requirement is used according to the regulation of GB/T6495.1 at 1000 W.m-2And under the irradiance, measuring the current-voltage characteristic of the cell piece every 10 days, and processing data to obtain a light attenuation curve chart 4 of the cell piece. FIG. 4 shows that the light attenuation effect of the battery plate is obviously improved by the screen printing process after heat treatment.
Fig. 1 is a defect density graph of copper indium gallium selenide cell sheets (prepared according to the method of example 1) after heat treatment and without heat treatment. When the internal defect density of the CIGS battery piece is high, alkali metal elements are generally gathered near the interface, so that the alkali metal elements are further subjected to segregation in the actual use process of the battery piece, the electric charges near the interface and the electric charges inside the absorption layer are not uniformly distributed, the photoelectric property of the battery piece is reduced, and the light attenuation phenomenon is generated. After the TCO process, the density of the internal defects of the cell is reduced after the defect passivation treatment, so that the accumulation of alkali metal at the grain boundary can be effectively prevented, and the segregation phenomenon in the use process is reduced, thereby reducing the light attenuation effect. Fig. 2 is a partial graph of the sheet resistance of the window layer after heat treatment and without heat treatment, and the sheet resistance of the surface of the cell after heat treatment after the TCO process is reduced, which may be because the surface of the cell is more dense and the porosity is reduced through long-time heat treatment, and the reduction of the sheet resistance can improve the FF of the cell.
The above-described embodiment is a preferred embodiment of the present invention, and is not intended to limit the present invention in any way, and other variations and modifications may be made without departing from the spirit and scope of the invention as defined in the appended claims.
Claims (8)
1. A defect passivation method for solving the problem of light decay of a copper indium gallium selenide solar cell is characterized by comprising the following steps:
(1) depositing a Mo back electrode on a substrate;
(2) depositing a copper indium gallium selenide light absorption layer on the Mo back electrode;
(3) depositing a CdS buffer layer on the CIGS light absorption layer;
(4) depositing a high-resistance i-ZnO layer and ZnO, namely an Al window layer on the CdS buffer layer to form the copper indium gallium selenide solar cell;
(5) the method for passivating the defects of the CIGS solar cell specifically comprises the following steps:
placing the CIGS solar cell into an atmosphere furnace, exhausting air from a hearth, introducing reaction gas after the air is exhausted, and performing heat treatment by adopting the following procedures:
heating to 80-120 deg.C at a rate of 5-10 deg.C per minute, maintaining for 1-3 hr, and using type I reaction gas; the I-type reaction gas is inert gas, and the inert gas is selected from one of nitrogen, argon and nitrogen/argon mixed gas;
raising the temperature to 230 ℃ at the temperature raising speed of 2-5 ℃ per minute, preserving the temperature for 24-72 hours, and adopting II type reaction gas; the II type reaction gas is oxidizing gas, and the oxidizing gas is one of dry air and oxygen/argon mixed gas;
and stopping heating after the heat treatment is finished, naturally cooling to room temperature, exhausting air from the hearth and introducing compressed air to obtain the copper indium gallium selenide solar cell after the heat treatment.
2. The defect passivation method as claimed in claim 1, wherein the thickness of the Mo back electrode is 450-550 nm.
3. The method of claim 1, wherein the CIGS light absorbing layer has a thickness of 1.0-3.0 μm.
4. The defect passivation method of claim 1, wherein the CdS buffer layer has a thickness of 30-70 nm.
5. The defect passivation method as claimed in claim 1, wherein the total thickness of the i-ZnO layer and the ZnO-Al window layer is controlled to be 110-250 nm.
6. The defect passivation method of claim 1, characterized in that, in the step (5), the flow rate of the reaction gas is controlled to be 10-50cm3·min-1。
7. The defect passivation method of claim 1, wherein in the step (2), an alkali metal pre-deposited layer is deposited on the Mo back electrode, and then the CIGS light absorption layer is deposited, wherein the thickness of the alkali metal pre-deposited layer is 2-20nm, and the material of the alkali metal pre-deposited layer is selected from one of NaF, KF, RbF and CsF.
8. The defect passivation method of claim 1, wherein the CIGS light absorption layer is deposited by a three-step co-evaporation method, wherein the step 1: raising the temperature of the substrate to 300-450 ℃, co-evaporating In, Ga and Se, and depositing the thickness of 0.5-1.2 mu m, wherein Ga/(In + Ga) is more than or equal to 0.2 and less than or equal to 0.5; the second step is that: raising the temperature of the substrate to 650 ℃ of 450 ℃ and co-evaporating Cu and Se, wherein the deposition thickness is 0.5-0.8 mu m, and the Cu/(In + Ga) is more than or equal to 0.95 and less than or equal to 1.20; and 3, step 3: keeping the temperature of the substrate unchanged, co-evaporating In, Ga and Se, wherein the deposition thickness is 0.2-0.5 mu m, and finally controlling Cu/(In + Ga) to be more than or equal to 0.82 and less than or equal to 0.95 and Ga/(In + Ga) to be more than or equal to 0.2 and less than or equal to 0.4 In the CIGS.
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| US7585547B2 (en) * | 2006-04-13 | 2009-09-08 | Solopower, Inc. | Method and apparatus to form thin layers of materials on a base |
| US20100243043A1 (en) * | 2009-03-25 | 2010-09-30 | Chuan-Lung Chuang | Light Absorbing Layer Of CIGS Solar Cell And Method For Fabricating The Same |
| US8900664B2 (en) * | 2012-09-14 | 2014-12-02 | Intermolecular, Inc. | Method of fabricating high efficiency CIGS solar cells |
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| CN103474505A (en) * | 2012-06-06 | 2013-12-25 | 尚越光电科技有限公司 | Alkali metal doping method in large-scale production of CIGS (copper, indium, gallium, selenium) thin-film solar cell |
| CN104518052A (en) * | 2013-10-08 | 2015-04-15 | 台积太阳能股份有限公司 | Method of making photovoltaic device having high quantum efficiency |
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