CN112513822A - 信息处理方法及装置、设备、系统 - Google Patents

信息处理方法及装置、设备、系统 Download PDF

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CN112513822A
CN112513822A CN201880096230.9A CN201880096230A CN112513822A CN 112513822 A CN112513822 A CN 112513822A CN 201880096230 A CN201880096230 A CN 201880096230A CN 112513822 A CN112513822 A CN 112513822A
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CN112513822B (zh
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金龙
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Huawei Technologies Co Ltd
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Huawei Technologies Co Ltd
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    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
    • G06F3/0601—Interfaces specially adapted for storage systems
    • G06F3/0628—Interfaces specially adapted for storage systems making use of a particular technique
    • G06F3/0655—Vertical data movement, i.e. input-output transfer; data movement between one or more hosts and one or more storage devices
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00—Accessing, addressing or allocating within memory systems or architectures
    • G06F12/02—Addressing or allocation; Relocation
    • G06F12/0223—User address space allocation, e.g. contiguous or non contiguous base addressing
    • G06F12/023—Free address space management
    • G06F12/0238—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory
    • G06F12/0246—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory in block erasable memory, e.g. flash memory
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
    • G06F3/0601—Interfaces specially adapted for storage systems
    • G06F3/0602—Interfaces specially adapted for storage systems specifically adapted to achieve a particular effect
    • G06F3/0604—Improving or facilitating administration, e.g. storage management
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
    • G06F3/0601—Interfaces specially adapted for storage systems
    • G06F3/0668—Interfaces specially adapted for storage systems adopting a particular infrastructure
    • G06F3/0671—In-line storage system
    • G06F3/0673—Single storage device
    • G06F3/0679—Non-volatile semiconductor memory device, e.g. flash memory, one time programmable memory [OTP]
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2212/00—Indexing scheme relating to accessing, addressing or allocation within memory systems or architectures
    • G06F2212/72—Details relating to flash memory management
    • G06F2212/7201—Logical to physical mapping or translation of blocks or pages

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  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Human Computer Interaction (AREA)
  • Memory System (AREA)
  • Information Retrieval, Db Structures And Fs Structures Therefor (AREA)

Abstract

一种信息处理方法及装置、设备、系统；其中，该信息处理方法包括：主芯片确定第一信息，该第一信息中包括第一逻辑地址集合；该主芯片生成第一指示信息，该第一指示信息包括第一逻辑地址集合以及根据逻辑地址与物理地址映射关系确定的与该第一逻辑地址集合对应的第一物理地址集合，该第一物理地址集合包括N个物理地址，该N个物理地址与第一逻辑地址集合中包括的N个逻辑地址一一对应，该N为大于或等于2的整数；该主芯片向与该主芯片连接的存储芯片发送第一请求，该第一请求包括该第一指示信息。该方法，以及对应的装置、设备和系统可有效提高读请求的响应速度。

Description

PCT国内申请，说明书已公开。

Claims (62)

  1. PCT国内申请，权利要求书已公开。
CN201880096230.9A 2018-08-01 2018-08-01 信息处理方法及装置、设备、系统 Active CN112513822B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/CN2018/098040 WO2020024151A1 (zh) 2018-08-01 2018-08-01 信息处理方法及装置、设备、系统

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CN112513822A true CN112513822A (zh) 2021-03-16
CN112513822B CN112513822B (zh) 2024-05-10

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US (1) US11467766B2 (zh)
EP (1) EP3819771B1 (zh)
CN (1) CN112513822B (zh)
WO (1) WO2020024151A1 (zh)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20230144078A (ko) * 2021-03-18 2023-10-13 후아웨이 테크놀러지 컴퍼니 리미티드 메모리 동작을 수행하기 위한 방법 및 장치

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104346421A (zh) * 2013-07-25 2015-02-11 三星电子株式会社 改变数据传送速度的存储系统和改变数据传送速度的方法
CN105159622A (zh) * 2015-10-22 2015-12-16 湖南国科微电子股份有限公司 一种减小ssd读写io时延的方法与系统
US20160011790A1 (en) * 2014-07-14 2016-01-14 Sandisk Technologies Inc. Systems and methods to enable access to a host memory associated with a unified memory architecture (uma)
CN106775466A (zh) * 2016-12-05 2017-05-31 深圳市金泰克半导体有限公司 一种无dram的ftl读缓存管理方法及装置
US20170192902A1 (en) * 2015-12-30 2017-07-06 Samsung Electronics Co., Ltd. Storage device including nonvolatile memory device and controller, operating method of storage device, and method for accessing storage device
CN107015920A (zh) * 2015-12-30 2017-08-04 三星电子株式会社 存储设备和存储设备的操作方法
US20170300422A1 (en) * 2016-04-14 2017-10-19 Micron Technology, Inc. Memory device with direct read access
CN108062280A (zh) * 2016-11-07 2018-05-22 三星电子株式会社 存储器控制器以及包括该存储器控制器的存储器系统

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104346421A (zh) * 2013-07-25 2015-02-11 三星电子株式会社 改变数据传送速度的存储系统和改变数据传送速度的方法
US20160011790A1 (en) * 2014-07-14 2016-01-14 Sandisk Technologies Inc. Systems and methods to enable access to a host memory associated with a unified memory architecture (uma)
CN105159622A (zh) * 2015-10-22 2015-12-16 湖南国科微电子股份有限公司 一种减小ssd读写io时延的方法与系统
US20170192902A1 (en) * 2015-12-30 2017-07-06 Samsung Electronics Co., Ltd. Storage device including nonvolatile memory device and controller, operating method of storage device, and method for accessing storage device
CN107015920A (zh) * 2015-12-30 2017-08-04 三星电子株式会社 存储设备和存储设备的操作方法
US20170300422A1 (en) * 2016-04-14 2017-10-19 Micron Technology, Inc. Memory device with direct read access
CN108062280A (zh) * 2016-11-07 2018-05-22 三星电子株式会社 存储器控制器以及包括该存储器控制器的存储器系统
CN106775466A (zh) * 2016-12-05 2017-05-31 深圳市金泰克半导体有限公司 一种无dram的ftl读缓存管理方法及装置

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Publication number Publication date
CN112513822B (zh) 2024-05-10
EP3819771A1 (en) 2021-05-12
US11467766B2 (en) 2022-10-11
US20210149588A1 (en) 2021-05-20
EP3819771A4 (en) 2021-07-21
EP3819771B1 (en) 2023-10-04
WO2020024151A1 (zh) 2020-02-06

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