CN112513327A - Apparatus for measuring surface temperature of susceptor in CVD reactor - Google Patents

Apparatus for measuring surface temperature of susceptor in CVD reactor Download PDF

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Publication number
CN112513327A
CN112513327A CN201980048259.4A CN201980048259A CN112513327A CN 112513327 A CN112513327 A CN 112513327A CN 201980048259 A CN201980048259 A CN 201980048259A CN 112513327 A CN112513327 A CN 112513327A
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China
Prior art keywords
opening
cover plate
substrate
edge
susceptor
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Granted
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CN201980048259.4A
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Chinese (zh)
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CN112513327B (en
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P.S.劳弗
F.鲁达维特
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Aixtron SE
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Aixtron SE
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68771—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting more than one semiconductor substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support

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  • Metallurgy (AREA)
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  • Physics & Mathematics (AREA)
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  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

The invention relates to a cover plate (4, 5) for use in a CVD reactor, wherein the cover plate has a circumferential edge extending on a circular arc line, or wherein a plurality of identically designed cover plates (4, 5) can be arranged in a circle, such that the outer edges of the cover plates extending along the circular arc complement one another to form a complete circle. The placement position of the substrate holder for the substrate (10) or the carrier substrate (10) is located within the plane of the cover plate. According to the invention, the cover plate has an opening (15) which is open to its two broad sides which are directed away from one another, through which opening the upper side (3) of the base (2) can be seen, so that an optical temperature measurement can be carried out through the opening (15).

Description

Apparatus for measuring surface temperature of susceptor in CVD reactor
Technical Field
The invention relates to a device for depositing a layer, in particular containing elements of the III and V main groups, on a substrate, which is supported by the side of a susceptor facing a process chamber and is arranged in a free space between cover plates, wherein means are provided for optically measuring the temperature of the susceptor.
The invention further relates to a base assembly consisting of a base and a plurality of cover plates, and to a cover plate for use in a device or base assembly.
Background
Apparatuses of the aforementioned type are known in the prior art as CVD reactors, in particular MOCVD reactors, which are used for chemical vapor deposition, in particular using organometallic gaseous starting materials, in order to deposit III-V semiconductor layers in the process chamber of an MOCVD reactor. The composition of the layer or layer sequence deposited on the substrate and the crystalline or electrical properties of the deposited layer depend to a large extent on the temperature in the process chamber or on the surface of the substrate.
The substrate is positioned on a substrate holding device, which in turn is carried by a pedestal. The substrate holding device can be rotationally driven about its own axis. The circular base can also be driven in rotation about its figure axis (figure axis). The susceptor or process chamber is heated to a process temperature by a heating device, typically disposed below the susceptor, while the substrate is disposed above the susceptor. The heating power is controlled using a temperature regulating device that measures the temperature of the susceptor at the lower side of the susceptor. The measurement is performed optically, for example, by means of a light guide and a pyrometer.
It is also known to measure the substrate temperature optically, for example by means of a pyrometer arranged above the process chamber ceiling, which pyrometer has an optical path through an opening in the process chamber ceiling.
With a pyrometer for measuring the surface temperature of a substrate, the temperature of the substrate can be regulated only if there is a sufficient signal, which does not exist, in particular if the substrate or a layer deposited on the substrate is transparent to the wavelength used by the pyrometer. There is a temperature difference between the upper side of the susceptor and the lower side of the susceptor due to the heat flow through the susceptor from the backside towards the heating means to the upper side of the carrier substrate. The temperature difference depends on the heat radiation characteristics of the upper side of the base or of a cover plate arranged on the base.
The following patent documents are known from the prior art, US 2004/0175939 Al, US 2006/0269390 Al, JP 2016-035080A, US 2006/0102081 Al, US 2009/0308319 Al, US 2011/0143016 Al, DE 102009010555 Al, DE 102014117388 Al and DE 112016003443T 5.
A cover plate with an opening on the edge side is known from patent document US 2004/0175939 a 1. Patent document EP 20060269390 a1 describes a similar cover plate. The patent document JP 2016-.
Disclosure of Invention
The object of the present invention is to provide a measure by means of which the temperature of the susceptor can be precisely controlled, in particular in the vicinity of the substrate.
The technical problem is solved by the invention given in the claims. The dependent claims not only represent advantageous developments of the solution claimed in the dependent claims, but also represent independent solutions to the stated technical problem.
It is firstly and primarily proposed that at least one cover plate arranged on the upper side of the susceptor has an opening through which the upper side of the susceptor can be seen, wherein it is provided in particular that a free space for accommodating the substrate is provided between the cover plates. The light path of the component for measuring the temperature can pass through this, in particular, smaller opening. The means for temperature measurement may be a pyrometer, which is arranged outside the process chamber and in particular above the process chamber ceiling. The optical path of the pyrometer can in this case pass through an opening in the top cover of the process chamber and an opening in the cover plate. Embodiments of the invention may have a plurality of substrates which are located at a distance from one another on the side of the susceptor facing the process chamber. The substrates may be spatially separated from each other. A plurality of cover plates may be disposed in the gap between the substrates. However, it can also be provided that only one cover plate is provided. The cover plate may have a circular opening in which the substrate is located. The single cover plate can also have a plurality of circular openings in which the substrates are located in each case.
The opening in the top cover of the process chamber and the opening of the cover plate are arranged or aligned with one another in such a way that the beam path of the optical component, i.e. for example a pyrometer, passes through both openings and falls on the surface of the susceptor. In particular, it is provided here that the one-component or multi-component cover plate has an edge extending on a circular arc line. The edges of the cover plates can be supplemented with a complete circle. This complete circle constitutes an outer edge which delimits an outwardly directed supporting surface on which a plurality of substrates are supported, said substrates extending over a circular area around the center of the susceptor. The circular area is bounded by an outer circular arc and an inner circular arc. The region on which the substrate is present is thus in particular a torus. The torus may have a centre line extending over the arc of a circle, on which the centre of the substrate or of the substrate holding means respectively carrying one or more substrates is located. The opening of the cover plate is preferably located in the annular region. The cover plate can be a section of a circular cover body. The opening may be arranged between two inner edges of the cover plate, which inner edges each extend on a circular arc line. The opening can here be located on an axis of symmetry extending in the radial direction with respect to the circular object. The openings may also be located on a circular arc-shaped strip extending through the midpoint of the substrate arranged on a circular arc line. The openings are then only slightly spaced from the circular arc line. The opening is preferably centrally located between the two inner edges. Each section or each cover plate may be one piece. However, it is also possible for the cover plate or a section of the cover plate to be constructed, for example, in a sandwich-like manner from a plurality of flat objects lying on top of one another.
In an embodiment of the invention, it is proposed that the opening of the cover plate is open toward the edge of the cover plate. Provision can also be made for the openings to be arranged on the edge adjoining the substrate. The opening may be directly adjacent an edge of the substrate. Provision can be made for the cover to adjoin the outer edge of the base. A radially outer cover plate and a radially inner cover plate may be provided. The opening may correspond to a radially inner cover plate or a radially outer cover plate. In a preferred variant, the opening corresponds to a cover plate located radially on the outside. A plurality of radially outer cover plates may be provided, which are arranged in the circumferential direction along the edge of the base extending on the circular arc line. It is sufficient if only one of the cover plates has an opening, while all the cover plates arranged adjacent to one another in the circumferential direction, and in particular the radially outer cover plate, have at least one, preferably two openings, wherein it is provided in particular that all the openings are arranged on a circular arc line extending around a pattern axis of the base, about which pattern axis the base can be driven in rotation. The base can also consist of graphite, in particular coated graphite. The cover plate can likewise consist of graphite, in particular coated graphite. However, the cover plate can also be made of other materials, for example quartz or other temperature-resistant materials. In particular, it is provided that the plurality of, in particular inner and outer, cover plates enclose a circular free space. The cover plate has an inner edge extending on a circular arc line, and at least one substrate is arranged in the edge. A circular substrate holder may be arranged in the free space between the cover plates. The substrate holder, which may be composed of graphite or a similarly suitable material, can be driven in rotation about its figure axis. This may be achieved by gas rotary bearings. For this purpose, a gas flow can be discharged from the upper side of the susceptor, said gas flow forming a gas cushion on which the substrate holder is fixed. The substrate holding device can be rotated by a suitable direction of the gas flow flowing out of the opening. Each liningThe bottom holder may have a carrier ring located on an edge of the substrate holder. The carrier ring may have a radially inner carrier shoulder on which the edge of the substrate rests. The radially outwardly projecting overhang of the carrier ring can be gripped by the prongs of a fork gripper to load and unload a substrate from a CVD reactor or susceptor assembly (or susceptor apparatus). To engage the prongs of the gripper, the cover plate forms a slot that opens toward the outer edge of the base assembly. The two grooves extend parallel to each other and extend in tangential direction towards the substrate. The trough has a bottom. The groove is open to the free space in the region of the edge of the substrate or the inner edge of the cover plate. In particular, it is provided that the bottom of the groove has an opening through which the beam path of the optical component for temperature measurement can pass. The opening can correspond to a region of the base which directly adjoins the inner edge of the cover plate. In particular, it is provided that each of the cover plates forms a pair of parallel grooves which are open toward the radially outer edge of the cover plate. The device for temperature measurement may be a pyrometer, by means of which the surface temperature of the substrate can also be measured. The temperature measurement is carried out during the rotation of the susceptor about its axis, wherein the optical path of the optical measuring device remains stationary and moves over the substrate as a result of the rotation of the susceptor in order to determine the surface temperature of said substrate. It can be provided that the beam path has a radial distance from the axis of rotation of the susceptor which corresponds to the radial distance of the center of each substrate from the center of the susceptor. The substrate is preferably equally spaced from the center of the susceptor. The openings for the passage of the light paths may be located on the same or similar circular arc line around the center of rotation of the susceptor on which the center point of the substrate is also located. The light path thus passes through the opening in the cover plate provided for measuring the surface of the susceptor after having been moved from the substrate, respectively. The pyrometer is controlled by an electronic measuring device and can provide measurements at a sufficiently high frequency that a small opening area is also sufficient for obtaining temperature measurements of the susceptor surface. The radius of the susceptor is about 300 mm. The radius of the substrate holder is about 100 mm. The width of the slot is between about 10mm and about 15 mm. Of openings in cover platesThe area can be 10mm2To 100mm2. The area is preferably at most 80mm2. The opening may have a radius with a radius of 4 mm. The rounded apex is disposed about 7mm to 8mm from the open edge of the slot. In a further embodiment of the invention, it is provided that the surface of the base is provided with a suitable coating in order to protect the surface of the base. The coating is made of a resistant material, such as silicon carbide (SiC). In order to avoid the surface of the susceptor being unprotected at the location of the opening, in particular in order to avoid corrosion of unprotected locations below the opening by the introduction of corrosive gases during cleaning of the CVD reactor, suitable measures which are given below can be taken. By these measures, accumulation of residues, for example gallium metal, in the openings is also avoided. The accumulation of these, especially droplets of gallium, can attack the SiC coating. It is particularly advantageous for this purpose if the base surface has an opening into which the insert is inserted, wherein the upper side of the insert forms the surface visible to the pyrometer. The insert may be made of SiC. The insert can rest loosely on the base, be inserted loosely into the opening, but can also be connected to the base in a form-fitting manner. The insert may be spaced from the cover plate. However, the insert can also carry a cover plate. In this case, it is advantageous if the cover plate is placed on the insert in a gas-tight manner. Thereby protecting the area outside the insert from the corrosive gases used to clean the CVD reactor.
Drawings
Embodiments are described below with reference to the accompanying drawings. In the drawings:
figure 1 shows a top view of the base assembly,
fig. 2 shows a section through the susceptor assembly shown in fig. 1 according to the line II-II, wherein additionally the other parts of the CVD-reactor housing 1 are schematically shown,
figure 3 shows a cross-section according to the line III-III in figure 1,
figure 4 shows a perspective view of the radially outer cover plate 4,
figure 5 shows in an enlarged manner a partial region of the cover plate 4,
figure 6 shows a diagram of a second embodiment corresponding to figure 3,
figure 7 shows a diagram of a third embodiment corresponding to figure 3,
figure 8 shows a diagram of a fourth embodiment corresponding to figure 3,
figure 9 shows a diagram of a fifth embodiment corresponding to figure 3,
figure 10 shows a diagram of a sixth embodiment corresponding to figure 1,
figure 11 shows a cross-section according to section line XI-XI in figure 10,
figure 12 shows a diagram of the seventh embodiment corresponding to figure 11,
figure 13 shows a diagram of an eighth embodiment corresponding to figure 10,
fig. 14 shows a further exemplary embodiment in the representation according to fig. 4, in which the opening extends centrally between two circular arc-shaped boundary lines 25,
figure 15 shows a further embodiment of the present invention,
fig. 16 shows a top view of another embodiment, in which the opening 15 extends in the axis of symmetry 5,
figure 17 shows a cross-section according to the section line XVI-XVI in figure 16,
Detailed Description
The CVD reactor 1, which is only schematically illustrated in the drawing, has a gas-tight housing made of stainless steel, which can be evacuated. A disk-shaped susceptor 2 made of graphite or a similarly suitable material is located in the CVD-reactor housing 1, the edge 2' of the susceptor 2 extending on a circular arc line. The upper side 3 of the susceptor 2 points into a process chamber 7 which is bounded upward by a process chamber cover 6. The gas inlet 8 is located approximately in the region of a center point of the susceptor 2, which corresponds to a rotational axis 22 about which the susceptor 2 can be driven in rotation. The gas feed through the gas inlet 8 can take place from above through an opening in the process chamber ceiling 6. However, it is also provided that the gas feed takes place from below through an opening in the center of the susceptor 2.
Below the susceptor 2 there is a heating device 9 in order to heat the susceptor 2 to a susceptor temperature which is sufficiently high that a process chamber temperature is established in the process chamber 7, in which process chamber temperature the gaseous starting material fed into the process chamber 7 through the gas inlet 8 decomposes. The gaseous starting materials can be organometallic compounds of main group III and hydrides of main group V. The gallium-containing organometallic compound and ammonia gas may be co-fed with a carrier gas, for example, through a gas inlet, to deposit GaN on the substrate 10.
On the upper side 3 of the susceptor 2 facing the process chamber 7, a substrate holding device 12 is located, which has a disk-like shape and is arranged on a circular arc line around the axis of rotation 22. Each disk-shaped substrate holder 12 has a carrier ring 11 with a radially outer projection 19 and a radially inner carrier shoulder 23. The edge of the substrate 10 rests at least or only during transport on the support shoulder 23. Not shown slots and gas nozzles are provided which are located in the upper side 3 of the susceptor 2 below the substrate holding device 12 in order to generate a gas cushion below the substrate holding device 12 which can be rotationally driven about the figure axis of the substrate holding device 12.
The arrangement of substrate holder 12 and carrier ring 11 is located in a window, respectively, which is surrounded by cover plates 4, 5. At least one inner cover plate 5 is provided, which has a radially outer edge extending along a circular arc. The edge of the substrate 10, of the carrier ring 11 or of the substrate holder 12 abuts on this edge. In the illustrated embodiment, a plurality of inner cover plates 5 are arranged around the inner openings. The number of radially outer cover plates 4 and radially inner cover plates 5 may correspond to the number of substrates 10. In the embodiment, the number is 5.
A plurality of radially outer cover plates 4 are provided, the radially outer edges 24 of which extend along the radially outer edges 2' of the base 2. The outer cover plate 4 has a radially inner edge 25 which extends on a circular arc line and, together with the radially outer edge of the inner cover plate 5, forms a circular arc. The radially inner edge 25 of the outer cover plate 4 can extend over a larger radius than the radially outer edge of the inner cover plate 5.
The radially inner edge 25 of the outer cover plate 4 can form a step 26.
The outer cover plate 4 forms at least one groove 17 which is open toward the radially outer edge 24 of the cover plate 4 and forms a bottom 18 which is spaced apart from the upper side of the outer cover plate 4 facing the process chamber 7. The width of the slot 17 is about 10mm to 15 mm. In the illustrated embodiment, the radius R1 of the base 2 is approximately 300mm to 350 mm. In the embodiment, the radius R2 of the substrate holder 12 is approximately 100mm-120 mm.
For each substrate, two grooves 17 running parallel to each other can be provided, which run tangentially to the substrate 10. The prongs of the fork gripper can engage in the grooves 17 in order to grip the projections 19 of the carrier ring 11 in order to lift the carrier ring 11 together with the substrate 10. For this purpose, a free space for a grip (unorgriff) extends between the bottom 18 of the groove 17 and the underside of the projection 19. The outer cover plate is also provided without grooves 17.
According to the invention, at least one of the cover plates 4, 5 forms an opening 15 through which a section of the upper side 3 of the base 2 can be seen. The opening 15 thus constitutes an area of the cover device which does not cover the upper side of the substrate.
In the exemplary embodiment, the opening 15 is provided in the outer cover plate 4. In the exemplary embodiment, the opening 15 is arranged directly adjacent to the edge 25, so that the opening 15 forms a cut-out in the edge 25 of the outer cover. In the exemplary embodiment, it is also provided that the openings 15 are each arranged in the region of a base 18 of the groove 17. The opening 15 is arranged here in the radially inner end region of the groove 17, i.e. in a position in which the substrate 10 has its largest circumferential dimension about the axis of rotation 22. The opening 15 may be arranged on an arc about the axis of rotation 22, on which arc the centers of the substrate 10 or the carrier ring 11 and the substrate carrier 12 are also arranged. Each of the slots 1, which correspond in pairs to the substrate carrier 12 or the carrier ring 11, preferably has an opening 15.
Fig. 1 shows a circular arc line, designated a, which surrounds the center of the base assembly shown there. Line a constitutes the outer boundary line of the torus on which the substrate 10 is located. The line a is tangent to a radially outwardly directed section of the edge of the substrate 10. A line b, which defines the boundary of the torus in a radially inward direction, is tangent to the radially inner region of the edge of the substrate 10 and is likewise a circular arc line around the center of the susceptor assembly. The opening 15 is preferably located in a torus, wherein said opening 15 is closer to the circular arc line c than to the circular arc lines a, b delimiting the torus. The circular arc line c forms the center line of the circular ring surface. The circular arc line c may extend through the center of the substrate 10. The opening 15 can thus be located in a circular band in the middle of the torus, said band having a width of about half the radial distance of the two edge lines a, b.
In the embodiment described, the opening 15 is open towards the edge 25 of the cover plate 4. The width b of the opening is about 7mm to 10mm, preferably 8 mm. The U-shaped edge of the opening 15 has a rounded section extending on a semicircular line, which has a rounding radius of 4 mm. The opening 15 extends generally 5mm-10mm away from the edge 25. The rounded line has a top at a distance c of about 7mm-8mm from the edge 25.
In particular, it is provided that the area of the opening 15 is at most 80mm2. In a second embodiment shown in fig. 6, the upper side of the susceptor 2 is coated with a coating consisting of silicon carbide.
In a third exemplary embodiment, which is shown in fig. 7, the coating 27 is designed to be thicker in the region of the opening. The thickened section 27' of the coating 27 forms a projection which extends into the opening 15.
In a not shown embodiment, however, the edge of the opening 15 can also be located on the thickened region 27' of the coating 27.
In the fourth embodiment shown in fig. 8, the surface of the base 2 that can be seen through the opening 15 is constituted by the upper side 28' of the projection 29. In this embodiment, the insert 28 is inserted into a recess in the upper side of the base 3. The sections of the insert 28 form projections 29. The insert 29 is made of a resistant material, for example silicon carbide, and is inserted into a recess of the base 2, which is made of graphite, for example, and is provided with a silicon carbide coating 27.
In the fifth exemplary embodiment shown in fig. 9, the insert 28, which is likewise inserted into a recess in the base 2, forms a surface 28' which extends flush in the surface of the coating 27. The coating 27 and the insert 28 are also made of SiC here.
The opening 15 can be provided not only on the edge of the outer cover 4 but also on the edge of the inner cover 5. It can also be provided that the opening 15 is arranged on the outer or inner cover plate 4, 5, so that the opening 15 is annularly enclosed.
The sixth embodiment shown in fig. 10 shows the cover plate 5 provided with the inside of the opening 15.
Fig. 11 shows that the cover 5 is spaced apart from the upper side of the base 2 by a gap. The cover 5 rests on a projection 29, which here is formed by an insert 28, similar to the embodiment shown in fig. 8. The projection 29 or the upper side 2' of the insert 28, which is directed away from the susceptor 2, closes the opening 15 downward, so that when the CVD reactor is cleaned by introducing corrosive gases, said corrosive gases can only reach the gap to a small extent through the opening 15.
In the sixth exemplary embodiment shown in fig. 12, a projection 29 is shown, which here is also formed by the insert 28 and extends into the opening 15. The projection 29 or the upper side of the insert 28 can lie flush in the broad-side plane of the cover plate 4 or 5.
In the eighth exemplary embodiment shown in fig. 13, an opening 15 in the outer cover plate 4 is shown, which is also surrounded in an annular manner here.
Below the opening 15 there can be a coating according to fig. 6, a thickened coating according to fig. 7 or an insert according to fig. 8, 9, 11 and 12.
The surface of the susceptor 2 is protected against corrosion of the CVD reactor by a coating 27 or by an insert 28 made of a resistant material. A defined heat transfer path is formed between the underside of the base 2 and the surface 28 ' visible for the light path 14, which surface is formed by the upper side 28 ' of the protrusion 29 or the coating 27, 27 '.
The insert 28 can be connected to the base 2 in a form-fitting manner. However, the insert can also be releasably inserted into a recess on the upper side of the base 2. The insert may rest somewhat loosely on the base.
The opening 15 may have an opening depth in the range of 6 to 8 mm. The opening width may likewise be 6 to 8 mm.
It is also provided that the opening has an oval profile. The two narrow sides of the opening 15 lying opposite one another can extend over a semicircle. The diameter of the semicircle may be in the range of 4 to 7 mm. The diameter is preferably 5 mm. The vertices of the two semicircles may be spaced from each other by 6-10mm, with values between 8 and 9mm being preferred. Fig. 14 to 16 show such an embodiment. The present invention relates to a segment-shaped cover plate 4, which is designed in such a way that a plurality of such cover plates 4 can be joined to form a circle. A circular free space is formed, which is used for accommodating the substrate. The cover plate 4 shown in fig. 14 to 16 has an axis of symmetry S. The axis of symmetry S extends centrally between two circular arc-shaped edges 25. The cover plates 4, which are complementary to each other in a round shape, surround, with their inner edges 25, a round bearing surface, the center of which extends on a circular arc line. The opening 15 is located on an imaginary circular arc-shaped surface extending on the center of the support surface. The openings 15 are located in the narrow circular arc-shaped band. In fig. 1, this face is bounded by lines a and b.
The cover plate 4 can be designed in one piece. However, it is also provided that, as shown in particular in fig. 15, a plurality of cover plates 4, 4' are arranged one above the other in a sandwich-like manner.
The function of the device is as follows:
heating the susceptor 2 to the susceptor temperature by means of the heating device 9. The susceptor temperature is selected such that the surface of the substrate 10 reaches a process-specific substrate temperature.
Rotationally driving the susceptor 2 and the substrate holder 12 around their respective graphic axes.
Feeding the above-mentioned process gas into the process chamber 7 through the gas inlet element 8, so that said process gas is pyrolytically decomposed there and in particular on the surface of the substrate 10. The decomposition products are, for example, gallium and nitrogen. These decomposition products constitute a layer on the surface of the substrate 10.
During the deposition of the layers, the substrate temperature is measured optically by an optical measuring device, for example a pyrometer 13. The optical beam path 14 associated therewith passes from the pyrometer 13 parallel to the axis 22 through the opening 21 of the chamber lid 6. Furthermore, the light path 14 passes through an opening 15 in the outer cover 4, so that the surface temperature of the susceptor 2 can be measured optically at a measurement point 16 on the upper side 3 of the susceptor 2. The temperature value measured at the measuring point 16 can be used by a regulation device, not shown, in order to supply the heating device 9 with heating power in order to regulate the susceptor temperature to a desired value.
The surface temperature of the substrate 10 can also be measured by means of an optical measuring device 13. If the surface temperature can be measured, the substrate temperature can also be used for regulation.
The embodiments described above serve to illustrate the invention of the present application as a whole, which is based on the prior art by at least the following feature combinations, each independently, wherein two, more or all of these feature combinations can also be combined, namely:
an arrangement is characterized in that at least one cover plate 4, 5 has an opening 15 through which a section of the upper side 3 of the base 2 can be seen and through which a temperature measurement can be carried out.
A base assembly for a device, the base assembly having a base and cover 4, 5, characterised in that the opening 15 is in the torus.
A cover plate, characterized in that the opening 15 is arranged in the region of a torus.
A device, characterized in that the opening 15 opens towards the edge 25 of the cover plate 4 and/or that the opening 15 is closer to a circular arc line 10 extending through the center of a circular surface at least partially enclosed by the edge 25 of the cover plate 4 than to a circular arc line a tangent to the circular surface on the radially outer side or a circular arc line b tangent to the circular surface on the radially inner side.
A device, characterized in that the cover plate 4 has a circular circumferential edge or is a section of an object with a circular circumferential edge, wherein the cover plate has an inner edge 25 extending along a circular arc line, and the opening 15 is arranged between the two inner edges 25 or is arranged to abut on the inner edges 25.
A device is characterized in that the area of the opening (5) is 100mm at most2Preferably at most 80mm2Or 60mm at maximum2。
An arrangement is characterized in that the cover plate 4 has a slot 17 which is open towards the process chamber 7, the bottom 18 of which forms the opening 15 and/or the cover plate 4 abuts on the outer edge 2' of the base 2.
An arrangement is characterized in that the means for measuring the temperature of the susceptor (2) comprise a pyrometer (13) arranged above the process chamber ceiling (6), wherein a light path (14) extends through an opening (15) and an opening (21) arranged in the process chamber ceiling (6) above said opening (15).
A device is characterized in that a plurality of cover plates 4 are arranged along the edge 2' of a disk-shaped susceptor 2, each having an inner edge 25 on which an edge of a substrate 10, an edge of a carrier ring 11 or an edge of a substrate holder 12 abuts, wherein it is provided, in particular, that the plurality of cover plates 4 each form a pair of parallel grooves 17 which are open toward a radially outer edge 24 of the cover plate 4 and extend in the tangential direction toward the substrate 10.
A device is characterized in that the section of the upper side that can be seen through the opening 15 is coated, formed by a projection 29 or by an insert 28 inserted into a recess of the base 2, wherein the insert 28 or an end face 28 'of the projection 29 is flush with the upper side 3 or projects beyond the upper side 3, wherein it is provided in particular that the lower side 5' of the cover 5 rests on the projection 19 in the region of the opening 15, the projection closes the opening 15, and/or the covers 4, 5 form a window in which the substrate 10 is located.
All the technical features disclosed are essential to the invention, either by themselves or in various combinations. The disclosure of the belonging/attached priority document (prior application text) is also fully contained in the disclosure of the present application and the features of this document are also contained for this purpose in the claims of the present application. The dependent claims characterize the unique inventive improvements of the prior art with the features even in the absence of the features of the cited claims, in particular for the divisional application based on this feature. The invention as set forth in each claim may additionally have one or more of the features set forth in the foregoing description particularly in the reference numerals and/or in the list of reference numerals. The invention also relates to a design that does not implement individual ones of the features described in the preceding description, in particular if said features are clearly not necessary for the respective use or can be replaced by other means that serve technically the same purpose.
List of reference numerals
1 CVD reactor
2 base
2' edge
3 upper side
4 external cover plate
5 inner cover plate
5' lower side
6 processing chamber top cover
7 treatment chamber
8 gas inlet
9 heating device
10 substrate
11 load ring
12 substrate holding device
13 pyrometer
14 optical path
15 opening
16 measuring points
17 groove
18 bottom
19 projecting part
20 free space
21 opening
22 axis of rotation
23 bearing shoulder
24 outer edge
25 inner edge
26 steps
27 coating
27' coating
28 insert
28' surface
29 projection part
a arc line
b arc line
c arc line

Claims (16)

1. An arrangement in the form of a device for depositing layers, in particular containing elements of the III and V main groups, on at least one substrate (10), which substrate (10) is carried by a side (3) of a susceptor (2) facing a process chamber (7), wherein the edge of the substrate (10) abuts on at least one cover plate (4, 5) also carried by the susceptor (2), wherein optical means (13, 14, 15, 21) are provided for optically measuring the temperature of the susceptor (2) through an opening (21) of a process chamber lid (6), characterized in that the at least one cover plate (4, 5) has an opening (15) through which a section of the upper side (3) of the susceptor (2) can be seen and through which a temperature measurement can be carried out.
2. Device in the form of a base assembly for an apparatus according to claim 1, with a base (2) and cover plates (4, 5) arranged on the upper side (3) of the base, the cover plates (4, 5) having a free space between them for arranging a substrate (10) on a torus bounded by two circles (a, b) around the center of the base assembly, wherein the cover plate (4) has openings (15) open towards its two broad sides directed away from each other, through which openings the upper side (3) of the base (2) can be seen, characterized in that the openings are located in the torus.
3. Device in the form of a cover plate for the apparatus of claim 1 or the base assembly of claim 2, wherein the cover plate (4, 5) has a circumferential edge extending on a circular arc line, or wherein a plurality of identically designed cover plates (4, 5) can be arranged in a circle, so that the outer edges of the cover plates extending along the circular arc complement one another to form a complete circle within which a torus bounded by circles (a, b) is arranged in which the seating position for a substrate (10) or a substrate holder carrying the substrate (10) is located, wherein the cover plate (4) has an opening (15) which is open towards its two mutually oppositely directed broad sides, characterized in that the opening (15) is arranged in the region of the torus.
4. Device according to one of claims 1 to 3, characterized in that the opening (15) opens towards the edge (25) of the cover plate (4).
5. Device according to one of the preceding claims, characterized in that the opening (15) is closer to a circular arc line (10) extending through the center of a circular face at least partially enclosed by the edge (25) of the cover plate (4) than to a circular arc line (a) tangential to the circular face on the radially outer side or a circular arc line (b) tangential to the circular face on the radially inner side.
6. Device according to one of the preceding claims, characterized in that the cover plate (4) has a circular circumferential edge or is a section of an object with a circular circumferential edge, wherein the cover plate has an inner edge (25) extending along a circular arc line, and the opening (15) is arranged between the two inner edges (25) or is arranged abutting on the inner edges (25).
7. Device according to one of the preceding claims, characterized in that the area of the opening (5) is at most 100mm2Preferably at most 80mm2Or 60mm at maximum2。
8. Device according to one of the preceding claims, characterized in that the cover plate (4) has a slot (17) which is open towards the process chamber (7), the bottom (18) of which constitutes the opening (15).
9. Device according to one of the preceding claims, characterized in that the cover plate (4) abuts on the outer edge (2') of the base (2).
10. The device according to one of the preceding claims, characterized in that the means for measuring the temperature of the susceptor (2) comprise a pyrometer (13) arranged above the process chamber ceiling (6), wherein the light path (14) extends through the opening (15) and an opening (21) arranged in the process chamber ceiling (6) above said opening.
11. Device according to one of the preceding claims, characterized in that a plurality of cover plates (4) are arranged along the edge (2') of the disk-shaped susceptor (2), which cover plates each have an inner edge (25) on which an edge of the substrate (10), an edge of the carrier ring (11) or an edge of the substrate holding device (12) abuts.
12. Device according to one of the preceding claims, characterized in that the cover plates (4) each form pairs of parallel grooves (17) which are open towards the radially outer edge (24) of the cover plate (4) and extend tangentially towards the substrate (10).
13. Device according to one of the preceding claims, characterized in that the section of the upper side which can be seen through the opening (15) has a coating (27), is formed by a projection (29) or is formed by an insert (28) which is inserted into a recess of the base (2), wherein the insert (28) or an end face (28') of the projection (29) is flush in the upper side (3) or projects beyond the upper side (3).
14. Device according to one of the preceding claims, characterized in that the underside (5') of the cover plate (5) bears on a projection (19) in the region of the opening (15), said projection closing the opening (15).
15. Device according to one of the preceding claims, characterized in that the cover plate (4, 5) constitutes a window in which the substrate (10) is located.
16. An apparatus or method characterised by one or more of the characterising features of any one of the preceding claims.
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