CN112509812A - High voltage ceramic capacitor - Google Patents
High voltage ceramic capacitor Download PDFInfo
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- CN112509812A CN112509812A CN202011255925.2A CN202011255925A CN112509812A CN 112509812 A CN112509812 A CN 112509812A CN 202011255925 A CN202011255925 A CN 202011255925A CN 112509812 A CN112509812 A CN 112509812A
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- 239000003985 ceramic capacitor Substances 0.000 title claims abstract description 46
- 239000010410 layer Substances 0.000 claims abstract description 51
- 239000000919 ceramic Substances 0.000 claims abstract description 48
- 239000002344 surface layer Substances 0.000 claims abstract description 16
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 8
- 229910052802 copper Inorganic materials 0.000 claims abstract description 5
- 239000010949 copper Substances 0.000 claims abstract description 5
- 238000003825 pressing Methods 0.000 claims abstract description 3
- 229910002370 SrTiO3 Inorganic materials 0.000 claims description 23
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 claims description 20
- 239000000843 powder Substances 0.000 claims description 17
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 claims description 15
- ZKATWMILCYLAPD-UHFFFAOYSA-N niobium pentoxide Inorganic materials O=[Nb](=O)O[Nb](=O)=O ZKATWMILCYLAPD-UHFFFAOYSA-N 0.000 claims description 11
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims description 10
- 235000011114 ammonium hydroxide Nutrition 0.000 claims description 10
- 239000011259 mixed solution Substances 0.000 claims description 10
- 238000005476 soldering Methods 0.000 claims description 10
- 238000003756 stirring Methods 0.000 claims description 10
- 229910002113 barium titanate Inorganic materials 0.000 claims description 9
- 239000011258 core-shell material Substances 0.000 claims description 8
- 238000005245 sintering Methods 0.000 claims description 8
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 6
- 239000000243 solution Substances 0.000 claims description 6
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 5
- 238000001354 calcination Methods 0.000 claims description 5
- 238000001035 drying Methods 0.000 claims description 5
- 238000002156 mixing Methods 0.000 claims description 5
- 230000001590 oxidative effect Effects 0.000 claims description 5
- 238000004321 preservation Methods 0.000 claims description 5
- 238000002490 spark plasma sintering Methods 0.000 claims description 5
- 238000002604 ultrasonography Methods 0.000 claims description 5
- 238000002360 preparation method Methods 0.000 claims description 4
- 239000003822 epoxy resin Substances 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 229920000647 polyepoxide Polymers 0.000 claims description 3
- 239000003292 glue Substances 0.000 claims description 2
- 239000003990 capacitor Substances 0.000 abstract description 9
- 230000015556 catabolic process Effects 0.000 abstract description 8
- 230000007797 corrosion Effects 0.000 abstract description 2
- 238000005260 corrosion Methods 0.000 abstract description 2
- 238000000034 method Methods 0.000 description 11
- 230000000052 comparative effect Effects 0.000 description 9
- 238000004146 energy storage Methods 0.000 description 9
- 238000007747 plating Methods 0.000 description 6
- 230000002195 synergetic effect Effects 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000011162 core material Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000009713 electroplating Methods 0.000 description 2
- 229910002367 SrTiO Inorganic materials 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000009194 climbing Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 229920006335 epoxy glue Polymers 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/005—Electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/08—Inorganic dielectrics
- H01G4/12—Ceramic dielectrics
- H01G4/1209—Ceramic dielectrics characterised by the ceramic dielectric material
- H01G4/1218—Ceramic dielectrics characterised by the ceramic dielectric material based on titanium oxides or titanates
- H01G4/1227—Ceramic dielectrics characterised by the ceramic dielectric material based on titanium oxides or titanates based on alkaline earth titanates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/40—Structural combinations of fixed capacitors with other electric elements, the structure mainly consisting of a capacitor, e.g. RC combinations
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Ceramic Capacitors (AREA)
- Compositions Of Oxide Ceramics (AREA)
Abstract
The invention discloses a high-voltage ceramic capacitor, which comprises a laminated surface layer, wherein a ceramic medium is packaged in the laminated surface layer, a first electrode and a second electrode are arranged at two ends in the ceramic medium, outer electrode layers are respectively packaged at two ends of the ceramic medium in a pressing way, a first electroplated layer is electroplated on the outer sides of the outer electrode layers at the two ends, a second electroplated layer is electroplated on the outer sides of the first electroplated layer at the two ends, copper wires are soldered and connected to the upper ends of the second electroplated layers at the two ends, a high-resistance resistor and a light-emitting diode are connected in series on each copper wire, and a wiring terminal is electrically connected to the outer sides of the second electroplated layers at the two ends; the invention has two electroplated layers on the outer electrode layer, which can realize protection, prevent corrosion, increase the current performance of the capacitor, and detect the breakdown voltage by connecting with the high-resistance resistor and the light-emitting diode.
Description
Technical Field
The invention relates to the technical field of capacitors, in particular to a high-voltage ceramic capacitor.
Background
The high-voltage ceramic capacitor is a capacitor encapsulated by epoxy resin with dielectric ceramic as a core material. With the progress and the technological development of the modern times, the high-voltage ceramic capacitor mainly refers to a capacitor with the alternating-current working voltage of more than 10KV or a ceramic capacitor with the direct-current working voltage of more than 40 KV.
However, when the existing high-voltage ceramic capacitor is used, the terminals at two ends cannot be processed, so that the electrifying performance of the high-voltage ceramic capacitor is in a problem when the high-voltage ceramic capacitor is used, the terminals are easy to corrode in the using process, the breakdown voltage cannot be detected when the existing high-voltage ceramic capacitor is used, and when a circuit is disconnected, higher voltage exists inside the high-voltage ceramic capacitor, so that the voltage in the high-voltage ceramic capacitor can impact electrical equipment in the circuit, and the equipment is easy to damage.
Disclosure of Invention
Based on the technical problems in the background art, the invention provides the high-voltage ceramic capacitor which has the advantages of protecting a terminal, improving the electrifying performance, detecting the breakdown voltage, slowly discharging and the like.
The invention provides a high-voltage ceramic capacitor, which comprises a laminated surface layer, wherein a ceramic medium is packaged in the laminated surface layer, a first electrode and a second electrode are fixedly arranged at two ends in the ceramic medium, outer electrode layers are respectively packaged at two ends of the ceramic medium in a pressing mode, a first electroplated layer is electroplated on the outer sides of the outer electrode layers at the two ends, a second electroplated layer is electroplated on the outer sides of the first electroplated layer at the two ends, copper wires are connected to the upper ends of the second electroplated layers at the two ends in a soldering mode, a high-resistance resistor and a light emitting diode are connected to the copper wires in series, and wiring terminals are electrically connected to the outer sides of the second electroplated layers at the two ends.
Preferably, the laminated surface layer is made of high-temperature-resistant epoxy resin glue.
Preferably, at least three groups of the first electrodes and the second electrodes are respectively arranged, the first electrodes are fixedly connected to the outer electrode layer at one end, and the second electrodes are fixedly connected to the outer electrode layer at the other end.
Preferably, the first electrode and the second electrode are stacked and fixedly mounted in a staggered manner.
Preferably, the first electroplating layer is electroplated by using nickel element, and the second electroplating layer is electroplated by using tin element.
Preferably, the end parts of the wiring terminals at two ends are connected to the second electroplated layer through tin soldering, and the end parts of the wiring terminals are provided with soldering tin points which are semicircular.
Preferably, the bottom end of the light emitting diode is encapsulated inside the laminated surface layer, and the end of the light emitting diode is outside the laminated surface layer.
Preferably, the ceramic medium is prepared by the following steps:
s1: adding BaTiO into absolute ethyl alcohol solution3And SrTiO3And BaTiO is carried out under the conditions of stirring and ultrasound3And SrTiO3Activation of (2);
s2: adding tetraethoxysilane into the activated mixed solution of S1, and uniformly stirring;
s3: adding ammonia water into the mixed solution of S2 for reaction, and drying after the reaction is finished;
s4: adding Nb into the dried powder2O5And CeO2Uniformly mixing and calcining to prepare powder with a core-shell structure;
s5: putting the powder in the S4 into a die, and sintering at 1100-1200 ℃ in a vacuum environment by using a spark plasma sintering system to obtain a ceramic sintered body;
s6: and (3) carrying out heat preservation treatment on the ceramic sintered body in the S5 at the temperature of 1100-1200 ℃ for 1-3h in an oxidizing atmosphere to obtain the ceramic medium.
Preferably, the BaTiO3、SrTiO3The molar ratio of the ethyl orthosilicate is 1:1:1-1.1, and the volume ratio of the ethyl orthosilicate to the ammonia water is 1: 1-2.
Preferably, the Nb2O5And CeO2In a mass ratio of 1-3:1, and the Nb2O5And CeO2Is BaTiO3And SrTiO33-5% of the total mass of (A).
Compared with the prior art, the invention has the beneficial effects that:
(1) the invention has the advantages that the two electroplated layers are arranged on the outer electrode layer, the high-voltage ceramic capacitor can be protected, the corrosion of the outer electrode layer in use can be prevented, the current performance of the capacitor can be improved, the high-resistance resistor and the light-emitting diode are connected above the capacitor in parallel, the breakdown voltage of the capacitor can be detected, the capacitor can be continuously discharged after the circuit stops supplying power, and the impact damage of the impact voltage of the capacitor to electrical equipment can be prevented.
(2) The ceramic structure prepared by the method is a silicon dioxide coated core-shell structure and has good energy storage performance, and the core material is BaTiO3And SrTiO3The ceramic dielectric is composed according to the proportion of 1:1, is compounded in the sintering process, and has a certain synergistic effect on improving the energy storage performance of the ceramic dielectric; furthermore, the inventors have unexpectedly discovered during the development that Nb is added to the prepared core-shell structured powder during sintering2O5And CeO2The energy storage performance of the ceramic medium can be improved to a greater extent, and a synergistic effect exists between the ceramic medium and the ceramic medium.
Drawings
FIG. 1 is a schematic cross-sectional view of a high voltage ceramic capacitor according to the present invention;
fig. 2 is a partially enlarged view a of the high voltage ceramic capacitor according to the present invention.
In the figure: 1-laminating surface layer, 2-ceramic medium, 3-first electrode, 4-second electrode, 5-outer electrode layer, 6-first electroplated layer, 7-second electroplated layer, 8-copper wire, 9-high resistance resistor, 10-light emitting diode, 11-terminal and 12-soldering point.
Detailed Description
The present invention will be further illustrated with reference to the following specific examples.
Referring to fig. 1-2, the high voltage ceramic capacitor provided by the present invention includes a laminated surface layer 1, a ceramic medium 2 is encapsulated inside the laminated surface layer 1, a first electrode 3 and a second electrode 4 are fixedly disposed at two ends inside the ceramic medium 2, two ends of the ceramic medium 2 are respectively press-fitted and encapsulated with an outer electrode layer 5, the outer sides of the outer electrode layers 5 at the two ends are both plated with a first plating layer 6, the outer sides of the first plating layers 6 at the two ends are both plated with a second plating layer 7, the upper ends of the second plating layers 7 at the two ends are both soldered with a copper wire 8, the copper wire 8 is connected in series with a high resistance resistor 9 and a light emitting diode 10, and the outer sides of the second plating layers 7 at the two ends are both electrically connected with a terminal 11.
When in use, the terminals 11 at both ends of the high voltage ceramic capacitor are electrically connected, when the circuit is energized, the terminal 11 transmits current into the interior of the high-voltage ceramic capacitor, the transport of electrons is effected by the first electrode 3 and the second electrode 4, when the high voltage ceramic capacitor can be broken down when the voltage received by the terminal 11 is too large, the high resistance resistor 9 on the upper end of the high voltage ceramic capacitor cannot consume the voltage, so that the LED 10 is turned on, and the LED 10 can emit light at the moment to warn operators that the voltage is too high, the breakdown of the high-voltage ceramic capacitor is easy to cause, after the power supply is completed, the voltage inside the high-voltage ceramic capacitor is slowly discharged through the high-resistance resistor 9 and the light emitting diode 10, thereby preventing the current inside the high-voltage ceramic capacitor from causing an electric shock to the operator.
In order to encapsulate the high voltage ceramic capacitor and make it able to withstand the heat generated during the operation of the high voltage ceramic capacitor, the laminated surface layer 1 is made of high temperature resistant epoxy glue.
In order to stabilize the very high current climbing rate and the electricity storage process of the high-voltage ceramic capacitor, at least three groups of first electrodes 3 and second electrodes 4 are respectively arranged, the first electrodes 3 are fixedly connected to the outer electrode layer 5 at one end, and the second electrodes 4 are fixedly connected to the outer electrode layer 5 at the other end.
In order to make the current flow, the first electrode 3 and the second electrode 4 are fixedly mounted in a staggered and laminated manner.
In order to stabilize the protection and the conductivity, the first electroplated layer 6 is electroplated by using nickel element, and the second electroplated layer 7 is electroplated by using tin element.
In order to realize the electrical connection of the terminals 11 and make the electrical conduction performance of the terminals good, the ends of the terminals 11 at both ends are connected to the second plating layer 7 by soldering, the ends of the terminals 11 are provided with soldering points 12, and the soldering points 12 are semicircular.
In order to achieve detection of the breakdown voltage and slow discharge of the voltage, the bottom end of the light emitting diode 10 is enclosed inside the laminated skin 1, and the end of the light emitting diode 10 is outside the laminated skin 1.
The working principle is as follows: when in use, the terminals 11 at both ends of the high voltage ceramic capacitor are electrically connected, when the circuit is energized, the terminal 11 transmits current into the interior of the high-voltage ceramic capacitor, the transport of electrons is effected by the first electrode 3 and the second electrode 4, when the voltage received by the terminal 11 is too large, which can cause breakdown to the high voltage ceramic capacitor, and the high resistance resistor 9 at the upper end of the high voltage ceramic capacitor can not consume voltage, so that the LED 10 is turned on, and the LED 10 can emit light at the moment to warn operators that the voltage is too high, the breakdown of the high-voltage ceramic capacitor is easy to cause, after the power supply is completed, the voltage inside the high-voltage ceramic capacitor is slowly discharged through the high-resistance resistor 9 and the light emitting diode 10, thereby preventing the current inside the high-voltage ceramic capacitor from causing an electric shock to the operator.
Example 1
The preparation method of the ceramic dielectric provided by the invention comprises the following steps:
s1: adding BaTiO into absolute ethyl alcohol solution3And SrTiO3And BaTiO is carried out under the conditions of stirring and ultrasound3And SrTiO3Activation of (2);
s2: adding tetraethoxysilane into the activated mixed solution of S1, and uniformly stirring;
s3: adding ammonia water into the mixed solution of S2 for reaction, and drying after the reaction is finished;
s4: adding Nb into the dried powder2O5And CeO2Uniformly mixing and calcining to prepare powder with a core-shell structure;
s5: putting the powder in the S4 into a die, and sintering at 1100 ℃ in a vacuum environment by using a spark plasma sintering system to obtain a ceramic sintered body;
s6: and (3) carrying out heat preservation treatment on the ceramic sintered body in the S5 at 1100 ℃ for 1h in an oxidizing atmosphere to obtain the ceramic medium.
Wherein: BaTiO 23、SrTiO3The molar ratio of the ethyl orthosilicate is 1:1:1, and the volume ratio of the ethyl orthosilicate to the ammonia water is 1:1. Nb2O5And CeO2In a mass ratio of 1:1, and the Nb2O5And CeO2Is BaTiO3And SrTiO 33% of the total mass of (a).
Example 2
The preparation method of the ceramic dielectric provided by the invention comprises the following steps:
s1: adding BaTiO into absolute ethyl alcohol solution3And SrTiO3And BaTiO is carried out under the conditions of stirring and ultrasound3And SrTiO3Activation of (2);
s2: adding tetraethoxysilane into the activated mixed solution of S1, and uniformly stirring;
s3: adding ammonia water into the mixed solution of S2 for reaction, and drying after the reaction is finished;
s4: adding Nb into the dried powder2O5And CeO2Uniformly mixing and calcining to prepare powder with a core-shell structure;
s5: putting the powder in the S4 into a die, and sintering at 1200 ℃ in a vacuum environment by using a spark plasma sintering system to obtain a ceramic sintered body;
s6: and (3) carrying out heat preservation treatment on the ceramic sintered body in the S5 at 1200 ℃ for 1-3h in an oxidizing atmosphere to obtain the ceramic medium.
Wherein: BaTiO 23、SrTiO3The molar ratio of the ethyl orthosilicate is 1:1:1.1, and the volume ratio of the ethyl orthosilicate to the ammonia water is 1: 2. Nb2O5And CeO2In a mass ratio of 3:1, and the Nb2O5And CeO2Is BaTiO3And SrTiO 35% of the total mass of (a).
Example 3
The preparation method of the ceramic dielectric provided by the invention comprises the following steps:
s1: adding BaTiO into absolute ethyl alcohol solution3And SrTiO3And BaTiO is carried out under the conditions of stirring and ultrasound3And SrTiO3Activation of (2);
s2: adding tetraethoxysilane into the activated mixed solution of S1, and uniformly stirring;
s3: adding ammonia water into the mixed solution of S2 for reaction, and drying after the reaction is finished;
s4: adding Nb into the dried powder2O5And CeO2Uniformly mixing and calcining to prepare powder with a core-shell structure;
s5: putting the powder in the S4 into a die, and sintering at 1150 ℃ in a vacuum environment by using a spark plasma sintering system to obtain a ceramic sintered body;
s6: and (3) carrying out heat preservation treatment on the ceramic sintered body in the S5 at 1150 ℃ for 2h in an oxidizing atmosphere to obtain the ceramic medium.
Wherein: BaTiO 23、SrTiO3The molar ratio of the ethyl orthosilicate is 1:1:1.05, and the volume ratio of the ethyl orthosilicate to the ammonia water is 1: 1.5. Nb2O5And CeO2In a mass ratio of 2:1, and the Nb2O5And CeO2Is BaTiO3And SrTiO 34% of the total mass of (a).
Comparative example 1
This scheme differs from example 3 in that the SrTiO in example 3 is used3All replaced by BaTiO3Otherwise, the same procedure as in example 3 was repeated.
Comparative example 2
This scheme differs from example 3 in that BaTiO in example 3 is used3All replaced by SrTiO3Otherwise, the same procedure as in example 3 was repeated.
Comparative example 3
This variant differs from example 3 in that no Nb is added in S42O5And CeO2Otherwise, the same procedure as in example 3 was repeated.
Comparative example 4
This scheme differs from example 3 in thatNb in example 32O5All substituted by CeO2Otherwise, the same procedure as in example 3 was repeated.
Comparative example 5
This scheme differs from example 3 in that CeO in example 3 is used2All substituted by Nb2O5Otherwise, the same procedure as in example 3 was repeated.
The ceramic media prepared in examples 1 to 3 and comparative examples 1 to 5 were ground to a thickness of 0.3mm, and after gold electrodes were sprayed on the surfaces, the hysteresis loops at a frequency of 60Hz were measured by a ferroelectric analyzer, and the energy storage density was calculated by an integration method. The results are shown in Table 1.
TABLE 1 ceramic dielectric energy storage Density test results
As can be seen from examples 1-3, the ceramic media prepared in this application have a storage density of 1.4J/cm3Above, the energy storage performance is good; as can be seen from example 3 and comparative examples 1 to 2, BaTiO in the present application3And SrTiO3When the ceramic dielectric is added according to the proportion of 1:1, the ceramic dielectric has a certain synergistic enhancement effect on the energy storage performance of the ceramic dielectric; from example 3 and comparative example 3, it can be seen that Nb is added into the prepared powder with the core-shell structure during the sintering process2O5And CeO2The energy storage performance of the ceramic medium can be improved to a greater extent, and the results of example 3 and comparative examples 4-5 show that Nb is adopted2O5And CeO2The additive also has a certain synergistic enhancement effect on the energy storage performance of the ceramic dielectric.
The above description is only for the preferred embodiment of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art should be considered to be within the technical scope of the present invention, and the technical solutions and the inventive concepts thereof according to the present invention should be equivalent or changed within the scope of the present invention.
Claims (10)
1. A high voltage ceramic capacitor comprising a laminated surface layer characterized in that: the laminated surface layer is internally packaged with a ceramic medium, a first electrode and a second electrode are fixedly arranged at two ends of the interior of the ceramic medium, two ends of the ceramic medium are respectively packaged with an outer electrode layer in a pressing mode, the outer sides of the outer electrode layers at the two ends are both electroplated with a first electroplated layer, the outer sides of the first electroplated layers at the two ends are both electroplated with a second electroplated layer, the upper ends of the second electroplated layers at the two ends are both connected with copper wires in a soldering mode, the copper wires are connected with a high-resistance resistor and a light emitting diode in series, and the outer sides of the second electroplated layers at the two ends are both electrically connected with wiring terminals.
2. A high voltage ceramic capacitor according to claim 1, wherein: the laminated surface layer adopts high-temperature-resistant epoxy resin glue.
3. A high voltage ceramic capacitor according to claim 1, wherein: the first electrodes and the second electrodes are at least provided with three groups respectively, the first electrodes are fixedly connected to the outer electrode layer at one end, and the second electrodes are fixedly connected to the outer electrode layer at the other end.
4. A high voltage ceramic capacitor according to claim 1, wherein: the first electrode and the second electrode are mutually staggered, stacked and fixedly installed.
5. A high voltage ceramic capacitor according to claim 1, wherein: the first electroplated layer is electroplated by adopting nickel element, and the second electroplated layer is electroplated by adopting tin element.
6. A high voltage ceramic capacitor according to claim 1, wherein: the end parts of the wiring ends at two ends are connected to the second electroplated layer through tin soldering, and the end parts of the wiring ends are provided with soldering tin points which are semicircular.
7. A high voltage ceramic capacitor according to claim 1, wherein: the bottom end of the light emitting diode is packaged inside the laminated surface layer, and the end part of the light emitting diode is positioned outside the laminated surface layer.
8. A high voltage ceramic capacitor according to claim 1, wherein: the preparation method of the ceramic medium comprises the following steps:
s1: adding BaTiO into absolute ethyl alcohol solution3And SrTiO3And BaTiO is carried out under the conditions of stirring and ultrasound3And SrTiO3Activation of (2);
s2: adding tetraethoxysilane into the activated mixed solution of S1, and uniformly stirring;
s3: adding ammonia water into the mixed solution of S2 for reaction, and drying after the reaction is finished;
s4: adding Nb into the dried powder2O5And CeO2Uniformly mixing and calcining to prepare powder with a core-shell structure;
s5: putting the powder in the S4 into a die, and sintering at 1100-1200 ℃ in a vacuum environment by using a spark plasma sintering system to obtain a ceramic sintered body;
s6: and (3) carrying out heat preservation treatment on the ceramic sintered body in the S5 at the temperature of 1100-1200 ℃ for 1-3h in an oxidizing atmosphere to obtain the ceramic medium.
9. The high voltage ceramic capacitor of claim 8, wherein: the BaTiO3、SrTiO3The molar ratio of the ethyl orthosilicate is 1:1:1-1.1, and the volume ratio of the ethyl orthosilicate to the ammonia water is 1: 1-2.
10. The high voltage ceramic capacitor of claim 8, wherein: the Nb2O5And CeO2Mass ratio ofIs 1-3:1, and said Nb2O5And CeO2Is BaTiO3And SrTiO33-5% of the total mass of (A).
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CN113270272A (en) * | 2021-04-02 | 2021-08-17 | 章恒 | Solid-state aluminum electrolytic capacitor |
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