CN112490323A - Method and system for removing damage of solar cell slice - Google Patents

Method and system for removing damage of solar cell slice Download PDF

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Publication number
CN112490323A
CN112490323A CN202011160624.1A CN202011160624A CN112490323A CN 112490323 A CN112490323 A CN 112490323A CN 202011160624 A CN202011160624 A CN 202011160624A CN 112490323 A CN112490323 A CN 112490323A
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slice
solar cell
edge
unit
amorphous silicon
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周新
方结彬
何达能
陈刚
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Zhejiang Aiko Solar Energy Technology Co Ltd
Guangdong Aiko Technology Co Ltd
Tianjin Aiko Solar Energy Technology Co Ltd
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Zhejiang Aiko Solar Energy Technology Co Ltd
Guangdong Aiko Technology Co Ltd
Tianjin Aiko Solar Energy Technology Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
    • H01L31/1868—Passivation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
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Abstract

The invention discloses a method for removing slice damage of a solar cell, which comprises the following steps: obtaining a solar cell slice; immersing the edge of the slice into a corrosive solution, and removing amorphous silicon at the edge of the slice; then, an oxidation treatment is performed to form a silicon oxide passivation film on the edge of the cut piece. The invention also discloses a system for removing the slice damage of the solar cell. By implementing the invention, the carrier recombination effect at the edge of the slice can be effectively reduced, and the conversion efficiency of the solar cell slice is improved. By adopting the method, the conversion efficiency of the solar cell slice can be improved by 0.2-0.4%.

Description

Method and system for removing damage of solar cell slice
Technical Field
The invention relates to the technical field of solar cell processing, in particular to a method and a system for removing solar cell slice damage.
Background
Solar power generation is a green, clean, environment-friendly and pollution-free technology, and has been applied to thousands of households. At present, a solar module is a core power generation unit, and is also a key point for improving efficiency and upgrading of the whole solar power generation system. The technology for improving the efficiency of the solar module is all flowers and all flowers, and is different from each other, wherein the technologies of 1/2 battery pieces and 1/3 battery pieces are used as common knowledge of each module factory, and the solar module has the advantages that the whole battery piece is cut into 1/2 battery pieces and 1/3 battery pieces by adopting a laser technology, and then is assembled into the solar module, so that the current passing through each string of battery pieces is reduced by 1/2 or 2/3, the internal loss of series resistors inside the module is greatly reduced, and the power gain of each module is about 3-5W. In actual large-scale production, a module manufacturer generally performs laser scribing treatment on a whole cell finished product before welding, and then performs series welding, lamination and packaging to obtain the solar module.
The laser scribing is adopted to process the finished product of the battery piece, the inevitable efficiency loss brought to the battery piece is about 0.2-0.3%, and the reason is that when laser acts on the edge of the battery piece, crystalline silicon at the edge melts and recrystallizes, however, the process is completed in a moment, the recrystallization can be converted into irregular amorphous silicon substances, and at the moment, a large number of dislocations, defects, dangling bonds and composite centers are generated at the edge of the battery piece, so that the efficiency of the battery piece is seriously influenced. In order to overcome the defects, the conventional method is to oxidize the edge of the slice by using a strong oxidant, for example, in patent CN111509090A, a silicon oxide passivation film is formed on the edge of the slice by using ozone/hydrogen peroxide under the action of photocatalysis by light; patent CN111261749A adopts ozone/concentrated nitric acid/ultraviolet light treatment, and then SiO is formed after annealing2And a passivation layer. These methods all only form a silicon oxide passivation layer, and the improvement effect of the method is limited and cannot achieveThe desired effect.
Disclosure of Invention
The invention aims to provide a method for removing damage of a solar cell slice, which can effectively remove edge damage of the solar cell slice and improve efficiency.
The invention also aims to provide a system for removing the slice damage of the solar cell.
In order to solve the technical problem, the invention provides a method for removing the slice damage of a solar cell, which comprises the following steps:
(1) the method comprises the steps of obtaining a solar cell slice, wherein the solar cell slice comprises at least one slice edge and at least two non-slice edges;
(2) immersing the slice edge into an etching solution to remove the amorphous silicon on the slice edge;
(3) and carrying out oxidation treatment on the edge of the slice after the amorphous silicon is removed so as to form a silicon oxide passivation film on the edge of the slice.
As an improvement of the above technical scheme, in the step (2), the etching solution is one or more of a sulfuric acid solution, a hydrochloric acid solution, a hydrofluoric acid solution and a nitric acid solution;
the temperature of the corrosive solution is 10-40 ℃, the soaking time is 0.5-2 min, and the depth of the edge of the slice immersed in the corrosive solution is less than or equal to 0.3 mm;
in the step (3), one or more of concentrated sulfuric acid solution, concentrated nitric acid solution, ozone, hydrochloric acid solution and hydrogen peroxide solution is adopted to carry out oxidation treatment on the slice edge after amorphous silicon is removed.
As an improvement of the above technical solution, the etching solution is a mixture of a sulfuric acid solution, a hydrofluoric acid solution and a nitric acid solution;
h in the etching solution2SO4The concentration of (A) is 0-300 g/L, the concentration of HF is 30-100 g/L, HNO3The concentration of (A) is 200-400 g/L;
in the step (3), drying the edges of the slices without amorphous silicon, and introducing ozone to formA silicon oxide passivation film; wherein the drying temperature is 30-50 ℃, and the ozone concentration is 20-40mg/m3The oxidation time is 0.5-2 min.
As an improvement of the technical scheme, the step (1) comprises the following steps:
(1.1) obtaining a solar cell slice, wherein the solar cell slice comprises at least one slice edge and at least two non-slice edges;
(1.2) stacking a plurality of solar cell slices, and compacting under a preset pressure to obtain a cell stack; the slicing edges of the plurality of solar cell slices form a surface to be processed, and the non-slicing edges of the plurality of solar cell slices form two opposite grabbing surfaces;
and (1.3) arranging a protective baffle on the surface of the grabbing surface of the stacked battery piece to obtain the stacked battery pieces.
As an improvement of the technical scheme, the step (2) comprises the following steps:
(2.1) grabbing the slice stack through the protective baffle plate, and immersing the slice stack into an etching solution to remove amorphous silicon on the surface to be treated;
and (2.2) cleaning the surface to be treated except the amorphous silicon.
As an improvement of the technical scheme, in the step (1.2), the preset pressure is 10-20N;
in the step (1.3), the protective baffle is made of polytetrafluoroethylene.
As an improvement of the above technical solution, the solar cell slice comprises a front surface and a back surface, and when the cell slice stack is formed, the front surface of the previous cell slice is in contact with the back surface of the next cell slice.
Correspondingly, the invention also discloses a system for removing the slice damage of the solar cell, which comprises:
the feeding unit is used for obtaining a solar cell slice with at least one slice edge;
the etching processing unit is used for removing the amorphous silicon at the edge of the slice;
and the oxidation processing unit is used for oxidizing the edges of the slices from which the amorphous silicon is removed.
As an improvement of the above technical solution, the feeding unit includes:
the device comprises an acquisition unit, a processing unit and a control unit, wherein the acquisition unit is used for acquiring a solar cell slice containing at least one slice edge;
the stacking unit is used for stacking a plurality of solar battery slices to form a slice stack; the slice stack is provided with a surface to be processed formed by slice edges;
the corrosion treatment unit includes:
the etching unit is used for providing etching solution and removing amorphous silicon on the surface to be processed;
the cleaning unit is used for removing residual corrosive liquid on the surface to be treated;
the oxidation treatment unit includes:
a drying unit to dry the stack of slices;
and the oxidation unit is used for providing ozone and forming a silicon oxide passivation film on the surface to be treated.
As an improvement of the above technical solution, the method further comprises:
a grasping unit to grasp the stack of slices;
and the conveying unit is used for conveying the sliced sheet stack among the feeding unit, the corrosion processing unit and the oxidation processing unit.
The implementation of the invention has the following beneficial effects:
1. the method for removing the slice damage of the solar cell slice comprises the steps of immersing the edge of the slice into a corrosive solution to remove amorphous silicon on the edge of the slice; then, oxidation treatment is carried out to form a silicon oxide passivation film. Unsaturated chemical bonds and disordered atomic arrangement at the edges of the slices can be effectively removed through corrosion treatment until a complete crystalline silicon ordered atomic structure is reserved, the formation of a later-stage silicon oxide passivation film is not influenced, the carrier recombination effect at the edges of the slices is further reduced, and the efficiency is improved. By adopting the method, the conversion efficiency of the solar cell slice can be improved by 0.2-0.4%.
2. According to the method for removing the damage of the solar cell slice, a plurality of solar cell slices are stacked to form a slice stack, and then corrosion and oxidation are uniformly carried out; the method can process about 400 battery pieces at one time, and about 6000 battery pieces per hour; the method has the advantages of high productivity and stable processing quality, and can be well suitable for actual large-scale production.
Drawings
FIG. 1 is a flow chart of a method for removing slice damage of a solar cell according to the present invention;
FIG. 2 is a schematic diagram of a system for removing slice damage of a solar cell according to the present invention;
fig. 3 is a schematic structural diagram of a production line for removing damage to a solar cell slice according to an embodiment of the invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention will be described in further detail with reference to the accompanying drawings.
Referring to fig. 1, the invention provides a method for removing slice damage of a solar cell, which comprises the following steps:
s1: obtaining a solar cell slice;
specifically, the solar cell sheet is a finished product after electrode printing and firing are completed, and the finished solar cell sheet is cut by laser to form a solar cell sheet slice, which comprises a front surface, a back surface, at least one slice edge and at least two slice edges. Specifically, the solar cell slice may include two opposing slice edges, two opposing non-slice edges; alternatively, the solar cell slice may include one slice edge and three non-slice edges, including two opposing non-slice edges.
Preferably, S1 includes:
s11: obtaining a solar cell slice;
s12: stacking a plurality of solar cell slices, and compacting under a preset pressure to obtain a cell stack; the slicing edges of the plurality of solar cell slices form a surface to be processed, and the non-slicing edges of the plurality of solar cell slices form two opposite grabbing surfaces;
specifically, the preset pressure is 10-20N, if the pressure is less than 10N, the pressure cannot be effectively compressed, and subsequent corrosive solution and ozone can enter gaps to damage the electrode and film layer structures; if the pressure is greater than 20N, the solar cell sheet is likely to be broken.
Further, when the cell stack is formed, the front surface of the previous cell slice is in contact with the back surface of the next cell slice. Because the electrode position has tiny projections (the thickness is about 10-15 μm), if the front faces are aligned, the electrodes of the projections rub against each other, possibly causing failure; after the front surface and the back surface are contacted, the positions of the electrodes are staggered, so that the defects are eliminated.
S13: the surface of the grabbing surface for stacking the battery pieces is provided with a protective baffle plate, so that the sliced pieces are stacked
Specifically, the protective baffle is made of polytetrafluoroethylene, and can effectively resist corrosion of corrosive solution. The protective barrier covers the entire gripping surface to prevent penetration of corrosive solutions.
S2: immersing the edge of the slice into a corrosive solution, and removing amorphous silicon at the edge of the slice;
specifically, the etching solution is one or more of a sulfuric acid solution, a hydrochloric acid solution, a hydrofluoric acid solution and a nitric acid solution. Preferably, the corrosion solution is a mixture of a sulfuric acid solution, a hydrofluoric acid solution and a nitric acid solution; and etching H in the solution2SO4The concentration of (A) is 0-300 g/L, the concentration of HF is 30-100 g/L, HNO3The concentration of (A) is 200-400 g/L; the etching solution can rapidly and completely remove amorphous silicon at the edge of the slice, improves the efficiency, and simultaneously does not affect the area of the solar cell slice except the edge of the slice.
Specifically, the temperature of the corrosive solution is 10-40 ℃, the soaking time is 0.5-2 min, and the depth of the slice edge immersed in the corrosive solution is less than or equal to 0.3mm, so that the amorphous silicon on the slice edge can be rapidly and completely removed within the condition range, the efficiency is improved, and meanwhile, the area of the solar cell slice except the slice edge cannot be influenced.
Preferably, after the etching solution is soaked, the edges of the slices are cleaned to remove the residual etching solution. Specifically, water is adopted for cleaning, and the temperature of cleaning water is controlled to be 50-80 ℃.
Preferably, S2 includes:
s21: grabbing the slice stack through the protective baffle, and immersing the slice stack into a corrosive solution to remove amorphous silicon on the surface to be treated;
specifically, a manipulator can be adopted to clamp the slice stack from the protective baffle and realize grabbing; and directly transferring the grabbed object to a corrosive solution tank for corrosion treatment.
S22: cleaning the surface to be processed after the crystalline silicon is removed;
specifically, clean water is adopted to clean the surface to be treated so as to remove residual corrosive solution on the surface to be treated.
S3: carrying out oxidation treatment on the edge of the slice from which the amorphous silicon is removed so as to form a silicon oxide passivation film on the edge of the slice;
the silicon oxide passivation film not only can play a role in passivating redundant dangling bonds on the surface of the silicon, but also has the insulating capability, and prevents the PN node from being directly conducted to generate edge electric leakage. Furthermore, the whole treatment time can be shortened to the extent that the whole treatment time is shortened by the corrosion treatment and oxidation treatment process of the corrosion solution
Specifically, the slice edge after amorphous silicon is removed is subjected to oxidation treatment by adopting one or more of concentrated sulfuric acid solution, concentrated nitric acid solution, ozone, hydrochloric acid solution and hydrogen peroxide solution. Preferably, the edge of the slice after removing the amorphous silicon is oxidized by ozone.
Further, in the step, the edge of the cleaned slice is dried, and ozone is introduced while drying to form a silicon oxide passivation film. Wherein the drying temperature is 30-50 ℃, and the ozone concentration is 20-40mg/m3The oxidation time is 0.5-2 min. Under the condition, the silicon oxide passivation film which completely covers the edge of the slice can be quickly formed, and the area of the solar cell slice except the edge of the slice is not influenced.
In addition, the invention also discloses a system for removing the slice damage of the solar cell, referring to fig. 2, which includes: a feeding unit 1 for obtaining a solar cell slice having at least one slice edge; an etching processing unit 2 for removing the amorphous silicon at the edge of the slice, and an oxidation processing unit 3 for oxidizing the edge of the slice after the amorphous silicon is removed.
Further, the supply unit 1 includes an acquiring unit 11 for acquiring a slice of a solar cell having at least one slice edge and a stacking unit 12 for stacking a plurality of solar cells to form a slice stack. The etching unit 2 includes an etching unit 21 for supplying an etching liquid and removing amorphous silicon on the surface to be processed, and an etching liquid cleaning unit 22 for removing the residue on the surface to be processed. The oxidation treatment unit 3 includes a drying unit 31 for drying the stack of sliced pieces and an oxidation unit 32 for supplying ozone and forming a silicon oxide passivation film on the surface to be treated.
Furthermore, the system for removing the slicing damage of the solar cell slice further comprises a grabbing unit 4 for grabbing the slicing stack and a conveying unit 5 for conveying the slicing stack among the feeding unit 1, the corrosion processing unit 2 and the oxidation processing unit 3.
Based on the above system and method, the invention also provides a production line for removing the slice damage of the solar cell, referring to fig. 3, which comprises a stacking table 1, an etching tank 21, a cleaning tank 22 and a drying oven 31 arranged in sequence; a conveying chain 5 is provided above the stacking table 1, the etching tank 21, the cleaning tank 22, and the drying oven 23, and a plurality of robot arms 4 are provided on the conveying chain 5. Further, an ozone inlet duct 32 is provided at the bottom of the drying oven 23. Further, the etching tank 21, the cleaning tank 22 and the drying oven 23 are all disposed in the protective casing 6 to prevent gas leakage, and are made of tetrafluoroethylene material. Similarly, the material of each of the etching bath 21 and the cleaning bath 22 is tetrafluoroethylene.
The overall length of the production line is 10-20 m, wherein the length of the corrosion tank 21 is 5-15 m, the length of the cleaning tank 22 is 3-5 m, and the length of the drying furnace 31 is 5-8 m. The transmission speed of the transmission chain 5 is 1-4 m/min. About 400 battery pieces can be processed at one time through the production line, and about 6000 battery pieces can be processed per hour; the method has the advantages of high productivity and stable processing quality, and can be well suitable for actual large-scale production.
The invention is illustrated below in specific examples:
example 1
The embodiment provides a method for removing slice damage of a solar cell, which comprises the following steps:
(1) the method comprises the steps of obtaining a solar cell slice, wherein the solar cell slice comprises two slice edges and at least two non-slice edges;
(2) immersing the edge of the slice into an etching solution to remove the amorphous silicon on the edge of the slice;
wherein H in the etching solution2SO4Has a concentration of 100g/L, HF concentration of 60g/L, HNO3The concentration of (A) is 350 g/L; the temperature of the corrosive solution is 25 ℃, the soaking time is 0.5min, and the depth of the edge of the slice immersed in the corrosive solution is 0.2 mm;
(3) cleaning the edges of the slices;
wherein the water temperature is 60 ℃, and the cleaning time is 0.5 min;
(4) drying the edge of the slice from which the amorphous silicon is removed, and introducing ozone for oxidation treatment to form a silicon oxide passivation film on the edge of the slice;
specifically, the drying temperature is 35 ℃, and the ozone concentration is 25mg/m3The oxidation time is 1 min.
Comparative example 1
The comparative example provides a method for removing slice damage of a solar cell, comprising the following steps:
(1) the method comprises the steps of obtaining a solar cell slice, wherein the solar cell slice comprises two slice edges and at least two non-slice edges;
(2) carrying out ozone treatment on the edges of the slices for 20 min; the ozone concentration is 25mg/m3The oxidation temperature is 35 ℃,
comparative example 2
The comparative example provides a method for removing slice damage of a solar cell, comprising the following steps:
(1) the method comprises the steps of obtaining a solar cell slice, wherein the solar cell slice comprises two slice edges and at least two non-slice edges;
(2) soaking the edges of the slices in a mixed solution of hydrogen peroxide and hydrochloric acid for 10min, wherein the concentration of hydrogen peroxide is 20 wt%, the concentration of HCl is 70 wt%, and the temperature of the solution is 10 min; then annealed at 150 ℃ for 10 min.
The efficiency of the solar cell slices of example 1, comparative example 1, and comparative example 2 was measured, and the results thereof are as follows
Example 1 Comparative example 1 Comparative example 2
Efficiency of 22.58％ 22.36％ 22.37％
While the foregoing is directed to the preferred embodiment of the present invention, it will be understood by those skilled in the art that various changes and modifications may be made without departing from the spirit and scope of the invention.

Claims (10)

1. A method for removing slice damage of a solar cell is characterized by comprising the following steps:
(1) the method comprises the steps of obtaining a solar cell slice, wherein the solar cell slice comprises at least one slice edge and at least two non-slice edges;
(2) immersing the slice edge into an etching solution to remove the amorphous silicon on the slice edge;
(3) and carrying out oxidation treatment on the edge of the slice after the amorphous silicon is removed so as to form a silicon oxide passivation film on the edge of the slice.
2. The method according to claim 1, wherein in the step (2), the etching solution is one or more of a sulfuric acid solution, a hydrochloric acid solution, a hydrofluoric acid solution and a nitric acid solution;
the temperature of the corrosive solution is 10-40 ℃, the soaking time is 0.5-2 min, and the depth of the edge of the slice immersed in the corrosive solution is less than or equal to 0.3 mm;
in the step (3), one or more of concentrated sulfuric acid solution, concentrated nitric acid solution, ozone, hydrochloric acid solution and hydrogen peroxide solution is adopted to carry out oxidation treatment on the slice edge after amorphous silicon is removed.
3. The method for removing the damage of the solar cell slice according to claim 1, wherein the etching solution is a mixture of a sulfuric acid solution, a hydrofluoric acid solution, and a nitric acid solution;
h in the etching solution2SO4The concentration of (A) is 0-300 g/L, the concentration of HF is 30-100 g/L, HNO3The concentration of (A) is 200-400 g/L;
in the step (3), drying the edges of the slices from which the amorphous silicon is removed, and introducing ozone to form a silicon oxide passivation film; wherein the drying temperature is 30-50 ℃, and the ozone concentration is 20-40mg/m3The oxidation time is 0.5-2 min.
4. The method of removing solar cell slice damage of claim 1, wherein step (1) comprises:
(1.1) obtaining a solar cell slice, wherein the solar cell slice comprises at least one slice edge and at least two non-slice edges;
(1.2) stacking a plurality of solar cell slices, and compacting under a preset pressure to obtain a cell stack; the slicing edges of the plurality of solar cell slices form a surface to be processed, and the non-slicing edges of the plurality of solar cell slices form two opposite grabbing surfaces;
and (1.3) arranging a protective baffle on the surface of the grabbing surface of the stacked battery piece to obtain the stacked battery pieces.
5. The method of removing solar cell slice damage of claim 4, wherein step (2) comprises:
(2.1) grabbing the slice stack through the protective baffle plate, and immersing the slice stack into an etching solution to remove amorphous silicon on the surface to be treated;
and (2.2) cleaning the surface to be treated except the amorphous silicon.
6. The method of removing solar cell bias wafer damage of claim 4,
in the step (1.2), the preset pressure is 10-20N;
in the step (1.3), the protective baffle is made of polytetrafluoroethylene.
7. The method according to claim 4, wherein the solar cell slice comprises a front surface and a back surface, and the front surface of the previous cell slice is in contact with the back surface of the next cell slice when the cell slice stack is formed.
8. A system for removing slice damage of a solar cell, comprising:
the feeding unit is used for obtaining a solar cell slice with at least one slice edge;
the etching processing unit is used for removing the amorphous silicon at the edge of the slice;
and the oxidation processing unit is used for oxidizing the edges of the slices from which the amorphous silicon is removed.
9. The system for removing the slicing damage of the solar cell piece as claimed in claim 8, wherein the feeding unit comprises:
the device comprises an acquisition unit, a processing unit and a control unit, wherein the acquisition unit is used for acquiring a solar cell slice containing at least one slice edge;
the stacking unit is used for stacking a plurality of solar battery slices to form a slice stack; the slice stack is provided with a surface to be processed formed by slice edges;
the corrosion treatment unit includes:
the etching unit is used for providing etching solution and removing amorphous silicon on the surface to be processed;
the cleaning unit is used for removing residual corrosive liquid on the surface to be treated;
the oxidation treatment unit includes:
a drying unit to dry the stack of slices;
and the oxidation unit is used for providing ozone and forming a silicon oxide passivation film on the surface to be treated.
10. The system for removing solar cell slice damage of claim 9, further comprising:
a grasping unit to grasp the stack of slices;
and the conveying unit is used for conveying the sliced sheet stack among the feeding unit, the corrosion processing unit and the oxidation processing unit.
CN202011160624.1A 2020-10-27 2020-10-27 Method and system for removing damage of solar cell slice Pending CN112490323A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112701187A (en) * 2020-12-28 2021-04-23 天合光能股份有限公司 Method and equipment for passivating edges of sliced batteries

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110416156A (en) * 2019-07-31 2019-11-05 常州时创能源科技有限公司 The preparation process of solar battery fragment
CN111326606A (en) * 2020-03-11 2020-06-23 苏州光汇新能源科技有限公司 N-type slicing solar cell structure and manufacturing method thereof

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110416156A (en) * 2019-07-31 2019-11-05 常州时创能源科技有限公司 The preparation process of solar battery fragment
CN111326606A (en) * 2020-03-11 2020-06-23 苏州光汇新能源科技有限公司 N-type slicing solar cell structure and manufacturing method thereof

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112701187A (en) * 2020-12-28 2021-04-23 天合光能股份有限公司 Method and equipment for passivating edges of sliced batteries

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Application publication date: 20210312